CN104201250A - All Al-back surface field emitter N-type single crystal cell manufacturing method - Google Patents
All Al-back surface field emitter N-type single crystal cell manufacturing method Download PDFInfo
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- CN104201250A CN104201250A CN201410476345.4A CN201410476345A CN104201250A CN 104201250 A CN104201250 A CN 104201250A CN 201410476345 A CN201410476345 A CN 201410476345A CN 104201250 A CN104201250 A CN 104201250A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 210000002858 crystal cell Anatomy 0.000 title claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 8
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000006117 anti-reflective coating Substances 0.000 claims abstract 2
- 229910000831 Steel Inorganic materials 0.000 claims description 11
- 239000010959 steel Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 210000004027 cell Anatomy 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 3
- 239000011574 phosphorus Substances 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 19
- 238000007639 printing Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 241001347978 Major minor Species 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明提供了一种全铝背发射极N型单晶电池的制作方法，其特征在于，具体步骤包括：步骤1：在N型单晶硅片的正面制绒，使用磷扩散，刻蚀清洗，镀减反膜；步骤2：在N型单晶硅片的背面印刷全铝背场并烘干；步骤3：在N型单晶硅片的正面印刷主副栅线电极银浆并烧结；步骤4：在全铝背场上印刷导电银浆作为电极并烘干。本发明实现了在传统P型电池生产线上生产N型单晶电池，避免了整线设备二次巨额投入、扩散工艺改变等问题，降低N型电池的直接制造成本，降低了N型单晶批量化生产的入门条件，避免了高成本设备投入、扩散工艺改变等问题，降低N型电池的制造成本，配合全铝背结构工艺，提高了其转换效率。The invention provides a method for manufacturing an all-aluminum back-emitter N-type single crystal battery, which is characterized in that the specific steps include: Step 1: Texturing the front side of an N-type single crystal silicon wafer, using phosphorus to diffuse, etching and cleaning , anti-reflective coating; Step 2: Print all-aluminum back field on the back of the N-type monocrystalline silicon wafer and dry; Step 3: Print the main and auxiliary grid electrode silver paste on the front of the N-type monocrystalline silicon wafer and sinter it; Step 4: Print conductive silver paste on the all-aluminum back field as an electrode and dry it. The invention realizes the production of N-type monocrystalline batteries on the traditional P-type battery production line, avoids the problems of secondary huge investment in the whole line equipment, changes in the diffusion process, etc., reduces the direct manufacturing cost of N-type batteries, and reduces the batch size of N-type single crystals The entry condition of modernized production avoids problems such as high-cost equipment investment and diffusion process change, reduces the manufacturing cost of N-type batteries, and improves its conversion efficiency with the all-aluminum back structure process.
Description
Technical field
The manufacture method that the present invention relates to a kind of full aluminized emitter low-cost high-efficiency N-type single crystal battery, belongs to manufacture of solar cells manufacture technology field.
Background technology
At present, photovoltaic market is always taking P type crystalline silicon as the main force, only has Sunpower, the fewer companies such as Sanyo are made solar cell with N-type crystalline silicon, however, HIT (the Heterojunction with intrinsic thinlayer) battery of IBC (the Interdigitated back contacted) battery of Sunpower and Sanyo is but current two kinds of most effective solar cells, conversion efficiency is all more than 20%, show that N-type solar cell has good development potentiality aspect low-cost high-efficiency solar cell, but the N-type battery of above two kinds of structures needs very high cost to drop into, and be not suitable for industrialization produce.
Summary of the invention
Technical problem to be solved by this invention is to provide the full aluminium of a kind of use back of the body and is combined with silicon chip and forms aluminium and carry on the back the manufacture method of the low-cost high-efficiency N-type single crystal battery of becoming emitter.
In order to solve the problems of the technologies described above, the invention provides a kind of manufacture method of full aluminized emitter N-type single crystal battery, it is characterized in that, concrete steps comprise:
Step 1: in the positive making herbs into wool of n type single crystal silicon sheet, use phosphorus diffusion, etching is cleaned, plating antireflective film;
Step 2: in the full aluminium back surface field of back up the oven dry of n type single crystal silicon sheet;
Step 3: at the front of n type single crystal silicon sheet printing major-minor gate line electrode silver slurry sintering;
Step 4: printing conductive silver slurry is as electrode oven dry in full aluminium back surface field.
Preferably, in described step 2, adopt the full aluminium back surface field of steel disc web plate and steel blade printing.
Preferably, in described step 4, conductive silver paste is low-temperature conductive silver paste.
Preferably, the plating antireflective film described in described step 1 is for using tubular type PECVD plating silicon nitride anti-reflection film.
Technological process of the present invention was duplicate with conventional solar cell line before printing, in the time of silk screen printing, first print full aluminium back surface field, republish front electrode, finally at full aluminium back printed back electrode, different from traditional printing-flow (first print back electrode republish aluminium back surface field finally print front electrode), do not need to improve equipment but only need to change print order yet.
Compared with prior art, the invention has the beneficial effects as follows:
1, the present invention has realized production N-type single crystal battery on conventional P type production line for manufacturing battery, the problems such as the huge input of whole line equipment secondary, diffusion technology change are avoided, reduce the direct manufacturing cost of N-type battery, reduce the introduction condition of N-type monocrystalline mass production, avoid the problem such as expensive equipment investment, diffusion technology change, the manufacturing cost that reduces N-type battery, coordinates full aluminium back structure technique, has improved its conversion efficiency.
2, the present invention has adopted the technological means in the full aluminium back surface field of back up of n type single crystal silicon sheet, can effectively increase the area of aluminium back of the body knot, improves conversion efficiency.Its conversion efficiency of solar cell that adopts method provided by the invention to produce can reach more than 18%.
3, the present invention adopts and first prints full aluminium back surface field, republishes front electrode, finally at the print order of full aluminium back printed back electrode, realizes the printing of the full aluminium back of the body, increases the aluminium back side long-pending, improves conversion efficiency.
4, the present invention adopts low-temperature silver slurry to make backplane, replaces traditional back silver paste, the weldability of Assurance component.
5, the present invention has adopted steel disc web plate to replace traditional screen mesh printing plate, ensures the consistency of thickness of electrode and thickness.
6, the present invention adopts the steel scraper that is applicable to steel disc screen printing, replaces traditional rubber scraper, ensures the stability of printing.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiment
A manufacture method for full aluminized emitter N-type single crystal battery, concrete steps are:
Step 1.1: get N-type 125 types
monocrystalline silicon piece is some, and in the positive making herbs into wool of n type single crystal silicon sheet, Woolen-making liquid is made up of the water of NaOH 5wt%, texturing assistant agent (single crystal silicon solar cell making herbs into wool supplement TS41) 1% and surplus, attenuate amount 0.35g, and pyramid size is at 3um;
Step 1.2: use phosphorus oxychloride to carry out phosphorus diffusion, sheet resistance 60 ± 5 Ω in the front of n type single crystal silicon sheet;
Step 1.3: use wet etching machine to carry out etching cleaning at the back side of n type single crystal silicon sheet, process and remove edge P-N knot, attenuate amount 0.1-0.2g to do polished backside;
Step 1.4: use tubular type PECVD plating silicon nitride anti-reflection film in the front of n type single crystal silicon sheet, thickness 80 ± 5um, refractive index 2.05 ± 0.05;
Step 2: adopt steel disc web plate and the full aluminium back surface field of steel blade printing and dry at silicon chip back side, the weight in wet base 0.9 ± 0.05g of full aluminium back surface field, bake out temperature 200-250 DEG C, drying time is 1min;
Step 3: at the front of n type single crystal silicon sheet printing major-minor gate line electrode silver slurry sintering, total weight in wet base 0.07 ± 0.005g of major-minor gate line electrode silver slurry, the sintering temperature of the each warm area of sintering furnace is respectively 500 DEG C, 550 DEG C, 600 DEG C, 760 DEG C, 830 DEG C, 935 DEG C, the length of each warm area is 1m, furnace zone speed 255in/min.
Step 4: print low-temperature conductive silver paste as electrode in full aluminium back surface field and dry the weight in wet base 0.03 ± 0.005g of low-temperature conductive silver paste, 200 DEG C of bake out temperatures;
Step 5: electric performance test.
Steel disc web plate in described step 2 is only that from traditional screen mesh printing plate and the difference of rubber scraper material is different with steel blade, the electrode silver plasm using in step 3 is purchased from Samsung Kai Meike material trade Co., Ltd, model is 8521A, the low-temperature conductive silver paste using in step 4 is purchased from Ai Bosidike Chemical Co., Ltd., and model is 29C.
Full aluminized emitter N-type single crystal battery of the present invention and conventional BERGER test machine used for solar batteries are carried out to performance test, experimental data is as following table, wherein, routine refers to the solar cell that uses common process flow process to make, and the full aluminium back of the body refers to full aluminized emitter N-type single crystal battery of the present invention.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410476345.4A CN104201250A (en) | 2014-09-18 | 2014-09-18 | All Al-back surface field emitter N-type single crystal cell manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410476345.4A CN104201250A (en) | 2014-09-18 | 2014-09-18 | All Al-back surface field emitter N-type single crystal cell manufacturing method |
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| CN104201250A true CN104201250A (en) | 2014-12-10 |
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| CN201410476345.4A Pending CN104201250A (en) | 2014-09-18 | 2014-09-18 | All Al-back surface field emitter N-type single crystal cell manufacturing method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868011A (en) * | 2015-03-30 | 2015-08-26 | 无锡帝科电子材料科技有限公司 | Manufacturing method of N type all-aluminum back emitter solar cell and solar cell prepared by the same |
| CN106784131A (en) * | 2016-11-11 | 2017-05-31 | 揭阳中诚集团有限公司 | Solar battery sheet based on N-type silicon chip and preparation method thereof |
| CN109244151A (en) * | 2018-08-01 | 2019-01-18 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of full aluminium back knot N-type monocrystalline solar cells |
| CN110350054A (en) * | 2019-06-13 | 2019-10-18 | 东方环晟光伏（江苏）有限公司 | A kind of printing process of solar energy crystal-silicon battery slice |
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|---|---|---|---|---|
| US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
| CN101764170A (en) * | 2009-12-31 | 2010-06-30 | 中山大学 | Aluminized emitter N-type solar battery and production method thereof |
| CN102029776A (en) * | 2010-10-26 | 2011-04-27 | 宁波升日太阳能电源有限公司 | Screen for printing silicon solar battery electrodes |
| CN102054881A (en) * | 2009-10-29 | 2011-05-11 | 上海宝银电子材料有限公司 | Solderable conductive silver paste with low-temperature back of crystalline silicon solar cell and preparation method |
| CN203312314U (en) * | 2013-06-26 | 2013-11-27 | 湖南工程学院 | N type crystal silicon solar battery fully covered with aluminum back emitter junctions |
| CN103746043A (en) * | 2014-01-29 | 2014-04-23 | 北京七星华创电子股份有限公司 | Preparation method of all aluminum doped N-type solar cell |
-
2014
- 2014-09-18 CN CN201410476345.4A patent/CN104201250A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
| CN102054881A (en) * | 2009-10-29 | 2011-05-11 | 上海宝银电子材料有限公司 | Solderable conductive silver paste with low-temperature back of crystalline silicon solar cell and preparation method |
| CN101764170A (en) * | 2009-12-31 | 2010-06-30 | 中山大学 | Aluminized emitter N-type solar battery and production method thereof |
| CN102029776A (en) * | 2010-10-26 | 2011-04-27 | 宁波升日太阳能电源有限公司 | Screen for printing silicon solar battery electrodes |
| CN203312314U (en) * | 2013-06-26 | 2013-11-27 | 湖南工程学院 | N type crystal silicon solar battery fully covered with aluminum back emitter junctions |
| CN103746043A (en) * | 2014-01-29 | 2014-04-23 | 北京七星华创电子股份有限公司 | Preparation method of all aluminum doped N-type solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868011A (en) * | 2015-03-30 | 2015-08-26 | 无锡帝科电子材料科技有限公司 | Manufacturing method of N type all-aluminum back emitter solar cell and solar cell prepared by the same |
| CN106784131A (en) * | 2016-11-11 | 2017-05-31 | 揭阳中诚集团有限公司 | Solar battery sheet based on N-type silicon chip and preparation method thereof |
| CN109244151A (en) * | 2018-08-01 | 2019-01-18 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of full aluminium back knot N-type monocrystalline solar cells |
| CN110350054A (en) * | 2019-06-13 | 2019-10-18 | 东方环晟光伏（江苏）有限公司 | A kind of printing process of solar energy crystal-silicon battery slice |
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Application publication date: 20141210 |