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CN104185689A - Element containing thermally stable polycrystalline diamond material and methods and assemblies for formation thereof - Google Patents

Element containing thermally stable polycrystalline diamond material and methods and assemblies for formation thereof Download PDF

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Publication number
CN104185689A
CN104185689A CN201280038918.4A CN201280038918A CN104185689A CN 104185689 A CN104185689 A CN 104185689A CN 201280038918 A CN201280038918 A CN 201280038918A CN 104185689 A CN104185689 A CN 104185689A
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tsp
tsp body
catalyst
substrate
superabrasive element
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CN104185689B (en
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B·阿特金斯
S·G·安德烈
R·W·阿弗里
R·L·拉迪
B·P·林福德
J·K·威金斯
K·D·恩古耶
钱江
K·E·博塔格诺里
S·C·斯科特
D·穆克帕德耶
M·A·维尔
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Halliburton Energy Services Inc
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C26/00Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • EFIXED CONSTRUCTIONS
    • E21EARTH OR ROCK DRILLING; MINING
    • E21BEARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B10/00Drill bits
    • E21B10/46Drill bits characterised by wear resisting parts, e.g. diamond inserts
    • E21B10/56Button-type inserts
    • E21B10/567Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
    • E21B10/573Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts characterised by support details, e.g. the substrate construction or the interface between the substrate and the cutting element
    • E21B10/5735Interface between the substrate and the cutting element
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00Aspects linked to processes or compositions used in powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C2204/00End product comprising different layers, coatings or parts of cermet

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  • Chemical & Material Sciences (AREA)
  • Mining & Mineral Resources (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Geology (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Earth Drilling (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

本发明提供了超硬磨料元件,所述超硬磨料元件包含基本不含催化剂的热稳定性多晶金刚石(TSP)体(所述TSP体有孔和接触面),与所述TSP体的接触面相邻的基底;和浸渗剂材料,所述浸渗剂材料浸渗在所述基底中并且浸渗在所述TSP体接触面的孔中。本发明还提供了包含这种超硬磨料元件的大地钻井钻头和其他装置。本发明还提供了通过浸渗和热压法来形成这种超硬磨料元件的方法和模具组件。

This invention provides a superhard abrasive element comprising a substantially catalyst-free, thermally stable polycrystalline diamond (TSP) body (the TSP body having pores and contact surfaces), a substrate adjacent to the contact surfaces of the TSP body, and an impregnating material impregnated in the substrate and in the pores of the contact surfaces of the TSP body. The invention also provides earth drilling bits and other devices incorporating such superhard abrasive elements. Furthermore, the invention provides a method and mold assembly for forming such superhard abrasive elements by impregnation and hot pressing.

Description

包含热稳定性多晶金刚石材料的元件以及用来形成该元件的方法和组件Components comprising thermally stable polycrystalline diamond material and methods and assemblies for forming the same

技术领域technical field

本发明涉及包含超硬磨料(super abrasive)体的超硬磨料元件,所述超硬磨料体(例如热稳定性多晶金刚石(TSP)体)通过浸渗剂材料与基底结合。在更具体的实施方式中,所述TSP体可以基本不含有浸渗剂材料,仅在与基底接触的TSP体表面附近存在少量浸渗剂材料。在一些实施方式中,所述浸渗剂材料也可以渗透入基底,在其中起粘合剂的功能。本发明也涉及形成超硬磨料元件的方法,所述超硬磨料元件包含使用浸渗剂材料与基底结合的TSP体。在特定的实施方式中,所述方法可以包括通过以下方式来形成超硬磨料元件:在同时包含TSP的模具中,在存在浸渗剂材料的情况下形成基底。The present invention relates to superabrasive elements comprising superabrasive bodies, such as thermally stable polycrystalline diamond (TSP) bodies, bonded to a substrate by an infiltrant material. In more specific embodiments, the TSP body may be substantially free of infiltrant material, with only a small amount of infiltrant material present near the surface of the TSP body in contact with the substrate. In some embodiments, the infiltrant material may also infiltrate the substrate, where it functions as a binder. The invention also relates to a method of forming a superabrasive element comprising a TSP body bonded to a substrate using an infiltrant material. In particular embodiments, the method can include forming the superabrasive element by forming the substrate in the presence of an infiltrant material in a mold that also includes the TSP.

背景background

各种工业装置的组件经常用于极端条件,例如与磨擦性表面的高冲击性接触。例如,这种极端条件通常在以石油提取或开采为目的的地下钻井过程中遇到。金刚石具有卓越无比的耐磨性,是用于大地钻井和使组件接触极端条件的类似活动的最有效材料。金刚石极其坚硬,能够将热量从磨料表面的接触点传递走,并且可以提供在这种情况下的其他优势。Components of various industrial installations are often used in extreme conditions, such as high-impact contact with abrasive surfaces. For example, such extreme conditions are commonly encountered during underground drilling for the purpose of oil extraction or extraction. Diamond's unrivaled wear resistance makes it the most effective material for earth drilling and similar activities that expose components to extreme conditions. Diamond is extremely hard, can transfer heat away from the point of contact with the abrasive surface, and can provide other advantages in this situation.

由于多晶金刚石晶体的随机分布,多晶形式的金刚石与单晶金刚石相比韧性增加,这避免了在单晶金刚石晶体中发现的特定切割平面。因此,在很多钻井应用或其他极端条件下,多晶金刚石通常是优选的金刚石形式。如果装置元件的表面层由金刚石(特别是多晶金刚石(PCD)密实体的形式)制成或由其他超硬磨料材料制成,那么所述装置元件在这些条件下有更长的使用寿命。Polycrystalline forms of diamond have increased toughness compared to single crystal diamond due to the random distribution of polycrystalline diamond crystals, which avoids the specific cutting planes found in single crystal diamond crystals. Therefore, polycrystalline diamond is often the preferred form of diamond in many drilling applications or other extreme conditions. Device elements have a longer service life under these conditions if their surface layers are made of diamond, especially in the form of polycrystalline diamond (PCD) compacts, or other superabrasive materials.

用于苛刻条件的元件可以包含与基材结合的PCD层。传统的PCD生产工艺非常严格并且极为昂贵。所述工艺称作直接在碳化物基材上“生长”多晶金刚石,以形成多晶金刚石复合密实体。所述工艺涉及将与催化剂粘合剂混合的、粘结(cemented)的碳化物片件和金刚石颗粒置于挤压机容器中,并对其施加超高压力和温度条件的压力循环。需要对小的金刚石颗粒施加超高温度和压力才能形成整体化的多晶金刚石体。所得的多晶金刚石体也与碳化物片件密切结合,造成了与碳化物基材紧密结合的多晶金刚石层形式的复合密实体。Components for harsh conditions may contain a PCD layer bonded to a substrate. The traditional PCD production process is very strict and extremely expensive. The process is known as "growing" polycrystalline diamond directly on a carbide substrate to form a polycrystalline diamond composite compact. The process involves placing cemented carbide flakes and diamond particles mixed with a catalyst binder in an extruder vessel and subjecting it to a pressure cycle of ultra-high pressure and temperature conditions. Ultra-high temperatures and pressures are required to be applied to small diamond grains to form an integrated polycrystalline diamond body. The resulting polycrystalline diamond body is also intimately bonded to the carbide sheet, resulting in a composite compact in the form of a layer of polycrystalline diamond tightly bonded to the carbide substrate.

PCD的问题来自使用钴或其他金属催化剂/粘合剂体系以促进多晶金刚石的生长的过程。晶体生长完成之后,所述催化剂/粘合剂保留在多晶金刚石体的孔中。因为钴或其他金属催化剂/粘合剂的热膨胀系数比金刚石高,当所述复合密实体例如在钎焊工艺(通过此工艺将碳化物部分与其他材料连接)或在实际应用中加热时,所述金属催化剂/粘合剂的膨胀率会高于金刚石。结果,当对PCD施加高于临界水平的温度时,膨胀的催化剂/粘合剂会在整个多晶金刚石结构中造成裂纹。这些裂纹会减弱PCD的强度,并且能最终造成破坏或故障(failure)。The problem with PCD arises from the process of using cobalt or other metal catalyst/binder systems to facilitate the growth of polycrystalline diamond. The catalyst/binder remains in the pores of the polycrystalline diamond body after crystal growth is complete. Because cobalt or other metal catalysts/binders have a higher coefficient of thermal expansion than diamond, when the composite compact is heated, for example in a brazing process (by which carbide parts are joined to other materials) or in practical applications, The metal catalyst/binder will have a higher expansion rate than diamond. As a result, when temperatures above a critical level are applied to the PCD, the expanding catalyst/binder can cause cracks throughout the polycrystalline diamond structure. These cracks weaken the PCD and can eventually cause damage or failure.

由于存在这些影响或其他影响,人们通常从PCD层的一部分(特别是在工作表面附近的部分)中除去催化剂。尽管也存在使用替代的酸或电解和液体金属技术的其他工艺,但是除去催化剂的最常见工艺是使用强酸浴。通常,使用酸法从PCD层除去催化剂的做法称作浸出(leaching)。酸法浸出通常首先在PCD层的外表面发生,并向内延伸进行。因此,包含经浸出操作的PCD层的传统元件经常表现出的特点为浸出到了距其表面某深度之处。大部分催化剂被浸出的PCD(包含PCD层的区域)称作热稳定性PCD(TSP)。现有的浸出方法的示例在U.S.4,224,380;U.S.7,712,553;U.S.6,544,308;U.S.20060060392和有关专利或申请中提供。Because of these effects or others, one often removes the catalyst from a portion of the PCD layer, especially near the working surface. The most common process for catalyst removal is the use of strong acid baths, although other processes using alternative acids or electrolysis and liquid metal techniques also exist. Typically, the use of an acid method to remove the catalyst from the PCD layer is called leaching. Acid leaching usually first occurs on the outer surface of the PCD layer and extends inward. Conventional elements comprising a leached PCD layer are therefore often characterized by leaching to a certain depth from their surface. The PCD (the region containing the PCD layer) where most of the catalyst is leached is called thermally stable PCD (TSP). Examples of existing leaching methods are provided in U.S. 4,224,380; U.S. 7,712,553; U.S. 6,544,308; U.S. 20060060392 and related patents or applications.

也必需对酸浸出进行控制,以避免基材或者基材和金刚石层之间的表面与用于浸出的酸之间的接触。足以浸出多晶金刚石的酸会造成抗性差得多的基材发生严重降解。对基材的损伤会损害PCD元件的物理完整性,并且在使用时可能造成裂纹、瓦解、或其他物理故障,后者还可能会造成其他破坏。Acid leaching must also be controlled to avoid contact between the substrate or the surface between the substrate and the diamond layer and the acid used for leaching. Acids sufficient to leach polycrystalline diamond can cause severe degradation of much less resistant substrates. Damage to the substrate compromises the physical integrity of the PCD element and may cause cracks, disintegration, or other physical failure during use, which may also cause other damage.

包含PCD层的元件需要进行仔细控制的浸出,这显著增加了PCD生产中的复杂性、时间和费用。另外,浸出通常对分批的PCD元件进行。确保合适浸出的测试是有破坏性的,并且必需在各个批次中的代表性元件上进行。由于需要进行这种破坏性测试,进一步增加了PCD元件的生产成本。Components comprising PCD layers require carefully controlled leaching, which adds significantly to the complexity, time and expense in PCD production. Additionally, leaching is typically performed on batches of PCD elements. Testing to ensure proper leaching is destructive and must be performed on representative components from each lot. The need to perform such destructive testing further increases the production cost of the PCD element.

人们曾经尝试通过对PCD层进行单独浸出,然后将其与基材连接,从而避免对完全形成的元件进行浸出时存在的问题。然而,这些尝试没有生产出可用的元件。具体来说,在实际使用中将PCD层与基材连接的方法失败了,使得PCD层滑动或脱离。特别地,使用钎焊方法(例如描述于U.S.4,850,523;U.S.7,487,849和相关专利或申请中的那些)或者使用机械锁定(locking)方法(例如描述于U.S.7,533,740或U.S.4,629,373和相关专利或申请中的那些)生产的元件容易发生故障。Attempts have been made to avoid the problems of leaching fully formed components by leaching the PCD layer separately and then attaching it to the substrate. However, these attempts have not produced usable components. Specifically, the method of connecting the PCD layer to the substrate failed in actual use, causing the PCD layer to slide or detach. In particular, using soldering methods such as those described in U.S. 4,850,523; U.S. 7,487,849 and related patents or applications, or using mechanical locking methods such as those described in U.S. 7,533,740 or U.S. 4,629,373 and related patents or applications ) produced components prone to failure.

将PCD层与预形成基材结合的其他方法描述于U.S.7,845,438,但是这些方法需要对基材中已经存在的材料进行熔融并使得这些材料渗入PCD层。Other methods of bonding a PCD layer to a preformed substrate are described in U.S. 7,845,438, but these methods require melting materials already present in the substrate and allowing these materials to infiltrate the PCD layer.

在其他方法中,人们通过用粘合剂材料对整个钻头和至少一部分PCD层进行浸渗,从而将浸出的PCD层与钻头(bit)的轮距(gage)区域直接连接。尽管这些方法适合于将PCD与轮距区域连接(在这些区域不需要在钻头的使用期限中将其除去),但是不适合于将PCD层置于钻头的切割区域,在所述切割区域,需要对PCD进行替换或旋转,以提供正常的钻头使用寿命。In other methods, the leached PCD layer is directly attached to the gage area of the bit by impregnating the entire bit and at least a portion of the PCD layer with an adhesive material. While these methods are suitable for attaching PCD to wheel base areas where it does not need to be removed over the life of the bit, they are not suitable for placing the PCD layer in the cutting area of the bit where it needs to be removed. Replace or rotate the PCD to provide normal bit life.

还使用其他方法将PCD元件(经常称为几何构件(geoset))与钻头的外部结合。几何构件通常用金属例如镍(Ni)来涂敷。几何构件涂层可以提供多种优势,例如在更高温度保护金刚石,以及与钻头基质结合强度的提高。Other methods are also used to incorporate PCD elements (often referred to as geosets) to the exterior of the drill bit. The geometrical components are usually coated with a metal such as nickel (Ni). Geometry coatings can provide benefits such as protection of the diamond at higher temperatures and increased bond strength to the bit matrix.

因此,需要某种元件(包括可旋转或可替换的元件),所述元件具有浸出过的PCD层例如TSP体,所述PCD层充分良好地与基底或基材连接,以使得所述元件可以在高温条件下使用,所述高温条件包括例如大地钻井钻头的切割元件所经历的那些条件。Therefore, there is a need for elements (including rotatable or replaceable elements) that have a leached PCD layer, such as a TSP body, that is sufficiently well bonded to the base or substrate so that the element can Used under high temperature conditions including, for example, those experienced by cutting elements of earth-boring drill bits.

概述overview

根据一个实施方式,本发明提供了超硬磨料元件,所述超硬磨料元件包括基本不含催化剂的热稳定性多晶金刚石(TSP)体(所述TSP体有孔和接触面),与所述TSP体的接触面相邻的基底;以及浸渗剂材料,所述浸渗剂材料浸渗入基底中和浸渗入TSP体接触面上的孔中。According to one embodiment, the present invention provides a superabrasive element comprising a substantially catalyst-free body of thermally stable polycrystalline diamond (TSP) (the TSP body having pores and contact surfaces) in contact with the a substrate adjacent to the contact surface of the TSP body; and an infiltrant material that infiltrates the substrate and into the pores on the TSP body contact surface.

根据另一个实施方式,本发明提供了大地钻井钻头,所述大地钻井钻头包含切割体形式的这种超硬磨料元件。According to another embodiment, the present invention provides an earth-boring drill bit comprising such a superabrasive element in the form of a cutting body.

根据另一个实施方式,本发明提供了用来形成超硬磨料元件的组件,所述组件包括有底部的模具,有接触面并且位于所述模具底部内的热稳定性多晶金刚石(TSP)体,置于所述模具中与所述接触面相邻并位于TSP体之上的基质粉末,和置于所述模具中基质粉末之上的浸渗剂材料。According to another embodiment, the present invention provides an assembly for forming a superabrasive element, the assembly comprising a bottomed mold, a body of thermally stable polycrystalline diamond (TSP) having a contact surface and positioned within the bottom of the mold , a matrix powder placed in the mold adjacent to the contact surface and over the TSP body, and an infiltrant material placed in the mold over the matrix powder.

根据另一个实施方式,本发明提供了形成超硬磨料元件的组件,所述组件包括模具,具有接触面并且位于所述模具中的热稳定性多晶金刚石(TSP)体,置于所述模具中并与所述接触面相邻的基质粉末,和置于所述模具中、位于基质粉末中的浸渗剂材料或粘合剂材料。According to another embodiment, the present invention provides an assembly for forming a superabrasive element, the assembly comprising a mold, a body of thermally stable polycrystalline diamond (TSP) having a contact surface and positioned in the mold, placed in the mold A matrix powder in and adjacent to the contact surface, and an infiltrant material or binder material placed in the mold in the matrix powder.

本发明还提供了形成超硬磨料的方法,所述方法包括对组件进行组装,所述组件包括具有底部的模具,具有孔和接触面并且位于模具底部之内的热稳定性多晶金刚石(TSP)体,置于所述模具中、与所述接触面相邻并且位于TSP体之上的基质粉末,和置于所述模具中、位于所述基质粉末之上的浸渗剂材料。所述方法还包括将所述组件加热到某个温度,并且加热一段时间,所述加热时间足以使得浸渗剂材料将基质粉末和TSP体的孔浸渗,并且对所述组件冷却以形成超硬磨料元件。The present invention also provides a method of forming a superabrasive, the method comprising assembling an assembly comprising a mold having a bottom, a thermally stable polycrystalline diamond (TSP ) body, a matrix powder placed in the mold adjacent to the contact surface and over the TSP body, and an infiltrant material placed in the mold over the matrix powder. The method also includes heating the assembly to a temperature and for a period of time sufficient for the infiltrant material to infiltrate the matrix powder and pores of the TSP body, and cooling the assembly to form a super Hard abrasive elements.

本发明还提供了另一种形成超硬磨料元件的方法,所述方法包括组装组件,所述组件包括模具,具有孔和接触面并且位于模具中的热稳定性多晶金刚石(TSP)体,置于所述模具中并与所述接触面相邻的基质粉末,和置于所述基质粉末中的浸渗剂材料或粘合剂材料。所述方法还包括将组件加热到某个温度和压力并加热一段时间,并且所述加热时间足以使得浸渗剂材料或粘合剂材料将基质粉末浸渗以形成与TSP体连接的基底。The present invention also provides another method of forming a superabrasive element, the method comprising assembling an assembly comprising a mold, a thermally stable polycrystalline diamond (TSP) body having a bore and a contact surface and positioned in the mold, A matrix powder disposed in the mold adjacent the contact surface, and an infiltrant or binder material disposed in the matrix powder. The method also includes heating the assembly to a temperature and pressure for a period of time sufficient to infiltrate the matrix powder with the infiltrant material or binder material to form a substrate bonded to the TSP body.

附图简述Brief description of the drawings

对本发明实施方式和其优点的更全面的理解需要参考下面与附图相结合的描述,其描述了本发明的实施方式,相同的数字表示相似的部件,图中:A more complete understanding of embodiments of the invention and advantages thereof should refer to the following description taken in conjunction with the accompanying drawings, which illustrate embodiments of the invention, like numerals indicating like parts, in which:

图1是用于形成超硬磨料元件的浸渗方法组件的截面侧视图,所述超硬磨料元件包含通过浸渗剂材料与基底结合的TSP体;1 is a cross-sectional side view of an infiltration process assembly for forming a superabrasive element comprising a body of TSP bonded to a substrate by an infiltrant material;

图2是超硬磨料元件的放大截面示意图;Fig. 2 is the enlarged cross-sectional schematic diagram of superabrasive element;

图3是用于形成超硬磨料元件的热压法组件的截面侧视图,所述超硬磨料元件包含通过浸渗剂材料与基底结合的TSP体;Figure 3 is a cross-sectional side view of a thermocompression process assembly used to form a superabrasive element comprising a body of TSP bonded to a substrate by an infiltrant material;

图4是在本发明一个实施方式中使用的TSP体的侧视图;Figure 4 is a side view of a TSP body used in one embodiment of the invention;

图5A和5B是超硬磨料元件的顶视图和侧视图;5A and 5B are top and side views of a superabrasive element;

图6是在本发明一个实施方式中使用的碳化物铸件加强物的侧视图;Figure 6 is a side view of a carbide casting reinforcement used in one embodiment of the invention;

图7是有楔形榫锁的超硬磨料元件的侧视图;Figure 7 is a side view of a superabrasive element with a dovetail lock;

图8是有横向锁的超硬磨料元件的侧视图;和Figure 8 is a side view of a superabrasive element with lateral lock; and

图9是楔形榫锁和横向锁联用的超硬磨料元件的侧视图。Figure 9 is a side view of a superabrasive element for a dovetail lock and a transverse lock.

发明详述Detailed description of the invention

本发明涉及包含通过浸渗剂材料与基底结合的超硬磨料体的超硬磨料元件,所述超硬磨料体是例如热稳定性多晶金刚石(TSP)体。本发明也涉及包含这种超硬磨料元件的工具,以及生产这种超硬磨料元件的方法。通常,在生产超硬磨料元件的方法中,所述超硬磨料体(例如TSP体)的超硬磨料特性可以基本保留不变或没有变差。The present invention relates to superabrasive elements comprising superabrasive bodies, such as thermally stable polycrystalline diamond (TSP) bodies, bonded to a substrate by an infiltrant material. The invention also relates to tools comprising such superabrasive elements, and methods of producing such superabrasive elements. In general, the superabrasive properties of the superabrasive body (eg, TSP body) may remain substantially unchanged or not deteriorate during the method of producing a superabrasive element.

尽管在本文所述示例实施方式中,超硬磨料元件通常是有平坦表面的圆柱形,但是其可以是适用于最终用途的任何形状形式,例如在一些实施方式中是圆锥型、圆柱形变体、或甚至有角。另外,在一些实施方式中,超硬磨料元件的表面可以是凹面、凸面或不规则形状。Although in the example embodiments described herein, the superabrasive elements are generally cylindrical with flat surfaces, they may be in any shape suitable for the end use, for example in some embodiments conical, cylindrical variants, Or even horned. Additionally, in some embodiments, the surface of the superabrasive element can be concave, convex, or irregularly shaped.

如图1所示,可以提供组件10以用于通过浸渗法来形成超硬磨料元件。组件10可以包括模具20,当所述超硬磨料元件的部件在成形的时候,所述模具用来容纳这些部件。TSP体30可以置于模具20内。TSP体30可以基本不含用于形成所述TSP体的催化剂。例如,可以从所述TSP体中除去至少85%的催化剂。基质粉末40也可以置于模具20内、TSP体30顶部之上。最终,浸渗剂材料50可以置于模具20内、基质粉末40顶部之上。As shown in FIG. 1 , an assembly 10 may be provided for forming superabrasive elements by infiltration. Assembly 10 may include a mold 20 for receiving the components of the superabrasive element as they are being formed. TSP body 30 may be placed within mold 20 . TSP body 30 may be substantially free of catalysts used to form the TSP body. For example, at least 85% of the catalyst can be removed from the TSP body. Matrix powder 40 may also be placed within mold 20 on top of TSP body 30 . Finally, infiltrant material 50 may be placed within mold 20 on top of matrix powder 40 .

为了形成超硬磨料元件,可以对组件10施加形成工艺,在所述形成工艺过程中,基质粉末40被起粘合剂功能的浸渗剂材料50浸渗,并最终形成基底。浸渗剂材料50将与基质粉末40接触的TSP体30的表面浸润,并且在所述表面处将TSP体30中的孔填充,使TSP体30与所述基底连接。图2显示了可以形成的超硬磨料元件60的放大截面图。超硬磨料元件60包含与基底70结合的TSP体30,所述基底70由基质粉末40形成。在特定的实施方式中,浸渗剂材料50可以分散于基底70内以作为粘合剂,并且也将TSP体30的接触面100(所述接触面100与基底70接触)中的孔浸渗到D深度,以形成包含浸渗剂材料的区域80。其余的TSP体30基本不含粘合剂,可以形成不含浸渗剂的区域90。可以对孔进行设计改造以使得在所述基底和TSP之间形成微观机械结合,而不仅仅是冶金结合。To form the superabrasive element, a forming process may be applied to the assembly 10 during which the matrix powder 40 is infiltrated with an infiltrant material 50 that functions as a binder and ultimately forms the substrate. The infiltrant material 50 wets the surface of the TSP body 30 in contact with the matrix powder 40 and fills the pores in the TSP body 30 at the surface, connecting the TSP body 30 to the substrate. FIG. 2 shows an enlarged cross-sectional view of a superabrasive element 60 that may be formed. Superabrasive element 60 includes TSP body 30 bonded to substrate 70 formed from matrix powder 40 . In particular embodiments, the infiltrant material 50 may be dispersed within the substrate 70 to act as a binder and also infiltrate the pores in the contact surface 100 of the TSP body 30 that is in contact with the substrate 70 to depth D to form region 80 comprising infiltrant material. The remainder of TSP body 30 is substantially free of binder and may form region 90 free of infiltrant. Pores can be engineered to create a micromechanical bond, rather than just a metallurgical bond, between the substrate and TSP.

根据另一个实施方式(未显示),可以在成形工艺之前将浸渗剂材料50与基质粉末40相互混合。在这样的实施方式中,浸渗剂材料仍然将基质粉末40浸渗,并且将TSP体30的表面浸润,也将填充在所述表面上的孔之内,以使由基质粉末40形成的基底70与TSP体30连接。According to another embodiment (not shown), the infiltrant material 50 and the matrix powder 40 may be intermixed prior to the forming process. In such an embodiment, the infiltrant material still infiltrates the matrix powder 40, and wets the surface of the TSP body 30, will also fill in the pores on the surface, so that the substrate formed by the matrix powder 40 70 is connected to TSP body 30.

根据图3所述的另一个实施方式,图2所示类型的超硬磨料元件60可以使用组件10a和热压法来形成。组件10a可以包含模具20a,当所述超硬磨料元件的部件成形时,所述模具20a用来容纳所述超硬磨料元件的部件。TSP体30可以置于模具20a内。基质粉末40a也可以置于模具20a内。通常当使用热压法时,在热压前,将浸渗剂材料与基质粉末相互混合。因此,基质粉末40a还可以包含与其相互混合的粘合剂材料。所述粘合剂材料可以是浸渗剂材料,或者其可以是不能将TSP体30浸渗的材料。在粘合剂材料不能将TSP体30浸渗,或者粘合剂材料对TSP体30的浸渗程度不足以在形成超硬磨料元件之后将TSP体与基底70充分连接的情况下,TSP体30可以与基底70主要通过由使用热压法产生的机械力来连接。在其他热压实施方式中,可以将浸渗剂材料50的圆盘置于基质粉末40上,并用于例如在较低压力下将基质粉末浸渗。According to another embodiment illustrated in FIG. 3, a superabrasive element 60 of the type shown in FIG. 2 may be formed using assembly 10a and heat pressing. Assembly 10a may include a mold 20a for receiving the component of the superabrasive element as it is formed. TSP body 30 may be placed within mold 20a. Matrix powder 40a may also be placed within mold 20a. Typically when hot pressing is used, the infiltrant material and matrix powder are intermixed before hot pressing. Accordingly, the matrix powder 40a may also contain a binder material intermixed therewith. The binder material may be an infiltrant material, or it may be a material that cannot impregnate the TSP body 30 . In the case where the binder material does not impregnate the TSP body 30, or the binder material does not impregnate the TSP body 30 to an extent sufficient to fully bond the TSP body to the substrate 70 after forming the superabrasive element, the TSP body 30 The connection with the base 70 may be mainly by mechanical force generated by using heat pressing. In other hot-pressed embodiments, a disc of infiltrant material 50 may be placed on matrix powder 40 and used to infiltrate the matrix powder, eg, at lower pressure.

在替代实施方式中,其他浸渗方法(例如热等静压)可以用于用浸渗剂材料将基质粉末浸渗。In alternative embodiments, other infiltration methods, such as hot isostatic pressing, may be used to infiltrate the matrix powder with an infiltrant material.

组件10中使用的模具20可以由适于耐受成形过程并使得将成形的超硬磨料元件移出的任意材料来制成。根据特定实施方式,模具20可以包含陶瓷材料。尽管图中显示了模具20有平底,但是在某些实施方式中(图中未显示),其可以制成允许浸渗剂材料50在TSP体30边缘流动的形状,帮助TSP体30与基底70之间形成机械连接。模具20a可以是适合耐受热压循环的任意模具。Mold 20 used in assembly 10 may be made of any material suitable to withstand the forming process and enable removal of the formed superabrasive elements. According to certain embodiments, the mold 20 may comprise a ceramic material. Although the mold 20 is shown as having a flat bottom, in some embodiments (not shown), it can be shaped to allow the infiltrant material 50 to flow around the edges of the TSP body 30, helping the TSP body 30 to bond with the substrate 70. form a mechanical connection. Mold 20a may be any mold suitable for withstanding heat and pressure cycles.

TSP体30可以是适合用于超硬磨料元件60的任意形状。在一些实施方式中,其可以是如图4所示的圆盘的形式。TSP体30可以有基本平坦的接触面(未显示)。然而如图4所示,TSP体30可以有某种特性件,所述特性件以机械方式增强超硬磨料元件60中TSP体与基底70的连接。特别地,TSP体30可以有如图4所示的不平坦的接触面100。所述不平坦的接触面100可以包含不平坦的特性件,例如凹槽110。在对以直角方向对凹槽施加作用力时,凹槽110可以帮助防止TSP体30从基底70上滑动。不平坦的接触面100可以有成夹角的区域,例如凹槽110的成夹角的壁120。这些成夹角的壁120可以通过将TSP体30和基底70互相锁定来提高这两个部件之间的机械连接。TSP body 30 may be any shape suitable for use with superabrasive element 60 . In some embodiments, it may be in the form of a disc as shown in FIG. 4 . TSP body 30 may have a substantially planar contact surface (not shown). However, as shown in FIG. 4 , the TSP body 30 may have features that mechanically enhance the connection of the TSP body to the substrate 70 in the superabrasive element 60 . In particular, the TSP body 30 may have an uneven contact surface 100 as shown in FIG. 4 . The uneven contact surface 100 may include uneven features such as grooves 110 . The grooves 110 can help prevent the TSP body 30 from sliding from the substrate 70 when forces are applied to the grooves in a perpendicular direction. The uneven contact surface 100 may have angled regions, such as the angled walls 120 of the groove 110 . These angled walls 120 may improve the mechanical connection between the TSP body 30 and base 70 by interlocking the two components.

也可以使用能增加TSP体30与基底70机械连接的其他构型。这种构型的两个示例示于图5A和5B。其他机械连接机制可以包含预先机械TSP连接机制,这种机制在单独使用时证明是不合适的,当与通过浸渗剂材料50的连接联用时可能是合适的,并且可以实际提高TSP体30与基底70的整体连接。示例的机制包括在U.S.7,533,740或U.S.4,629,373(通过引用纳入本文)中发现的那些。图7、8和9显示了可以增加TSP体30与基底70机械连接的其他构型。例如图9所示的一些这种构型可以向TSP体施加压缩力,特别是在使用中。Other configurations that increase the mechanical connection of TSP body 30 to substrate 70 may also be used. Two examples of such configurations are shown in Figures 5A and 5B. Other mechanical attachment mechanisms may include pre-mechanical TSP attachment mechanisms, which may prove inadequate when used alone, may be appropriate when used in conjunction with attachment through infiltrant material 50, and may actually improve the connection between TSP body 30 and Integral connection of the base 70. Exemplary mechanisms include those found in U.S. 7,533,740 or U.S. 4,629,373 (herein incorporated by reference). 7, 8 and 9 show other configurations that can increase the mechanical connection of TSP body 30 to substrate 70. As shown in FIG. Some such configurations, such as that shown in Figure 9, can apply compressive forces to the TSP body, especially in use.

当TSP体30通过热压成形法而不是通过浸渗剂材料与基底70机械连接时,可以使用TSP体30的特定机械构型。The particular mechanical configuration of TSP body 30 may be used when TSP body 30 is mechanically attached to substrate 70 by thermoforming rather than by an infiltrant material.

作为机械性增强TSP体30与基底70连接的补充或替代,接触面100的特性件也可以在形成超硬磨料元件60之前增加与基质粉末40接触的接触面积,或者在形成超硬磨料元件60之后增加与基底70接触的接触面积。特别地,不平坦的接触面100可以增加所述接触面积。更大的接触面积可以提高TSP体30与基底70的结合,所述提高是在成形工艺中通过使与基质粉末40相邻的更多的孔被浸渗剂材料50浸渗或者通过其他方式增加被浸渗剂材料50浸润的表面来实现。As a supplement or alternative to mechanically enhancing the connection of the TSP body 30 to the substrate 70, the characteristics of the contact surface 100 may also increase the contact area with the matrix powder 40 before forming the superabrasive element 60, or after forming the superabrasive element 60 The contact area with the substrate 70 is then increased. In particular, an uneven contact surface 100 can increase the contact area. A larger contact area can improve the bonding of the TSP body 30 to the substrate 70 during the forming process by infiltrating more pores adjacent to the matrix powder 40 with the infiltrant material 50 or by otherwise increasing The surface wetted by the infiltrant material 50 is achieved.

在一些实施方式中,接触面100的孔的数目或体积也可以帮助提高TSP体30与基底70的连接,所述提高是通过对浸渗剂材料50提供更多表面积以用于浸润和连接来实现。In some embodiments, the number or volume of pores in interface 100 can also help improve the connection of TSP body 30 to substrate 70 by providing more surface area for infiltrant material 50 for wetting and bonding. accomplish.

TSP体30可以是充分浸出的、热稳定的任意PCD。在合适于使浸渗剂材料50将基质粉末40浸渗并且将接触面100浸润和浸渗或者用于一些热压技术的温度下,PCD材料中剩余的未能充分浸出的催化剂会造成使PCD材料石墨化变成碳,将其弱化,使其不合适在超硬磨料元件中使用,甚至可能造成崩解。可以在将TSP体安置在组件10或10a中之前和在超硬磨料元件60成形之前,进行TSP体的浸出。可以使用用于形成PCD层的标准技术形成TSP体30。特别地,可以通过将天然或合成金刚石晶体的颗粒与催化剂混合,并且对该混合物施加高温和高压以形成与任何基材连接的PCD或从任何基材分离的PCD。所述PCD可以包含含有催化剂的间隙基质和金刚石体基质。根据特定实施方式,催化剂可以包含第VIII族金属,特别是钴(Co)。TSP body 30 can be any PCD that is well leached, thermally stable. At temperatures suitable for the infiltrant material 50 to infiltrate the matrix powder 40 and wet and infiltrate the contact surface 100 or for some hot-pressing techniques, remaining insufficiently leached catalyst in the PCD material can cause the PCD The graphitization of the material turns into carbon, weakening it, making it unsuitable for use in superabrasive elements, and possibly even causing disintegration. Leaching of the TSP body may be performed prior to placement of the TSP body in assembly 10 or 10a and prior to forming superabrasive element 60 . TSP body 30 may be formed using standard techniques for forming PCD layers. In particular, PCD attached to or detached from any substrate can be formed by mixing particles of natural or synthetic diamond crystals with a catalyst and applying high temperature and pressure to the mixture. The PCD may comprise an interstitial matrix containing a catalyst and a matrix of diamond bodies. According to a particular embodiment, the catalyst may comprise a Group VIII metal, in particular cobalt (Co).

然后PCD可以通过能将催化剂从间隙基质除去的任意工艺进行浸出。所述浸出工艺也可以除去基材(如果存在任意基材的话)。在一些实施方式中,在浸出前,基材的至少一部分可以通过例如研磨来除去。在特定实施方式中,PCD可以使用酸来浸出。浸出工艺可以与传统的浸出工艺不同,因为不需要保护任何基材或边界区域免受浸出影响。例如,可以将PCD或PCD/基材的组合简单地置于酸浴中而不使用任何通常采用的保护性部件。甚至酸浴的设计可以与传统酸浴不同。在本发明使用的很多工艺中,可以使用简易的酸桶。The PCD can then be leached by any process capable of removing the catalyst from the interstitial matrix. The leaching process can also remove substrate (if any substrate is present). In some embodiments, at least a portion of the substrate may be removed, eg, by grinding, prior to leaching. In particular embodiments, PCD can be leached using acids. The leaching process can differ from conventional leaching processes because there is no need to protect any substrate or boundary areas from leaching. For example, the PCD or PCD/substrate combination can simply be placed in an acid bath without any commonly employed protective components. Even the design of the acid bath can be different from traditional acid baths. In many of the processes used in the present invention, simple acid tanks can be used.

也可以使用路易斯酸法浸出试剂的替代浸出方法。在这种方法中,可以将包含催化剂的PCD置于路易斯酸法浸出试剂中,直到将所需要量的催化剂除去。这种方法可以在比传统浸出方法更低的温度和压力下进行。路易斯酸法浸出试剂可以包括三氯化铁(FeCl3)、氯化铜(CuCl2)、和任选的盐酸(HCl)、或硝酸(HNO3)、其溶液及其组合。这种浸出法的示例可以在US13/168,733中找到,US13/168,733是Ram Ladi等在2011年6月24日提交,题目为“CHEMICAL AGENTS FOR LEACHINGPOLYCRYSTALLINE DIAMOND ELEMENTS(用于浸出多晶金刚石元件的化学试剂)”,通过引用整体纳入本文。Alternative leaching methods using Lewis acid leaching reagents may also be used. In this method, the catalyst-containing PCD can be placed in a Lewis acid leaching reagent until the desired amount of catalyst is removed. This method can be performed at lower temperatures and pressures than traditional leaching methods. Lewis acid leaching reagents may include ferric chloride (FeCl 3 ), copper chloride (CuCl 2 ), and optionally hydrochloric acid (HCl), or nitric acid (HNO 3 ), solutions thereof, and combinations thereof. An example of this leaching method can be found in US 13/168,733, filed June 24, 2011 by Ram Ladi et al., entitled "CHEMICAL AGENTS FOR LEACHING POLYCRYSTALLINE DIAMOND ELEMENTS )", incorporated herein by reference in its entirety.

当催化剂从间隙基质中除去时,留下了曾经放置所述催化剂的孔。本发明的PCD浸出百分比可以表征为被除去以留下孔的催化剂的整体百分比。尽管如上述浸出程度可能在PCD表面向内部存在某种梯度,但是可以测定PCD浸出的平均值。根据本发明的特定实施方式,TSP体30可以包含基本不含催化剂的PCD。更具体来说,TSP体可以包含平均至少85%、至少90%、至少95%、或至少99%的催化剂被浸出的PCD。When the catalyst is removed from the interstitial matrix, the pores where the catalyst was once placed remain. The percent PCD leaching of the present invention can be characterized as the overall percent of catalyst that is removed to leave pores. Although there may be some gradient in the degree of leaching from the surface of the PCD inwards as described above, an average value of PCD leaching can be determined. According to certain embodiments of the invention, TSP body 30 may comprise PCD substantially free of catalyst. More specifically, the TSP body can comprise PCD with an average of at least 85%, at least 90%, at least 95%, or at least 99% catalyst leached.

在某些实施方式中,TSP体30可以有均一的金刚石粒度(grain size),但是在其他实施方式中,粒度可以在TSP体内。例如,在一些实施方式中,TSP体30可以在接触面100附近包含较大的金刚石颗粒,从而生成更多的孔或更大体积的孔,因而提供了更大的表面积以与浸渗剂材料50接触。在某些实施方式中,这些较大的金刚石颗粒可以在TSP体30中形成连接层(未显示)。在其他实施方式中,金刚石密度在连接层中可以较小。金刚石难以浸润的困难对TSP体30与基底70的连接提出了挑战,所以更低的金刚石密度可以通过提高接触面100的浸润来帮助连接。In some embodiments, the TSP body 30 may have a uniform diamond grain size, but in other embodiments, the grain size may be within the TSP body. For example, in some embodiments, the TSP body 30 may contain larger diamond particles near the interface 100, thereby creating more pores or pores of greater volume, thereby providing a greater surface area for contact with the infiltrant material. 50 contacts. In certain embodiments, these larger diamond particles may form a tie layer (not shown) in TSP body 30 . In other embodiments, the diamond density may be less in the tie layer. The difficulty of diamond wetting poses a challenge to the connection of the TSP body 30 to the substrate 70 , so a lower diamond density can help the connection by improving the wetting of the interface 100 .

在其他实施方式中,TSP体30可以包含不同材料(例如碳化物形成物,特别是W2C)形成的连接层,或包含与TSP体相比仅含少量金刚石的材料形成的连接层。在一个实施方式中,在形成超硬磨料元件之前,可以将这种连接层置于TSP体上。由于浸出的破坏性倾向,这种连接层可以在浸出之后置于TSP体30上。在另一个实施方式中,可以在形成超硬磨料元件的过程中,通过在基质粉末40和TSP体30之间的独立材料层来形成连接层。在任一实施方式中,连接层可以与TSP体充分连接,以在使用超硬磨料元件的过程中使其保持不变,但是可以提供提高的与基底70的连接。例如,连接层可以更容易地被浸渗剂材料50来浸润,或者与浸渗剂材料50形成的连接可以比TSP形成的连接更强。In other embodiments, the TSP body 30 may comprise a tie layer of a different material, such as a carbide former, especially W2C , or a material that contains only a small amount of diamond compared to the TSP body. In one embodiment, such tie layers may be placed on the TSP body prior to forming the superabrasive elements. Due to the destructive tendency of leaching, such a tie layer may be placed on the TSP body 30 after leaching. In another embodiment, the tie layer may be formed by a separate layer of material between the matrix powder 40 and the TSP body 30 during the formation of the superabrasive element. In either embodiment, the tie layer can be sufficiently bonded to the body of the TSP to remain unchanged during use of the superabrasive element, but can provide enhanced bond to the substrate 70 . For example, the tie layer may be more easily wetted by the infiltrant material 50, or the bond formed with the infiltrant material 50 may be stronger than the bond formed by the TSP.

基质粉末40或40a可以是粉末,或适于在用浸渗剂材料50(其可以起粘合剂的功能)浸渗之后形成基底70的任意其他材料。在特定的实施方式中,基质粉末40或40a可以是通常用于形成传统PCD元件的基材的材料。基质粉末40或40a也可以为基底70提供有利特性,例如刚性、耐侵蚀性、韧性、和各自与TSP体30的连接。例如,其可以是包含碳化物的粉末或碳化物形成粉末。与含有相似材料的传统PCD元件基材相比,基底70的浸渗剂材料50含量通常可以更高。结果,基底70的耐侵蚀性可能比传统基材更低。某种粉末混合物可以用作基质粉末40以提高基底70的耐侵蚀性。在特定实施方式中,粉末混合物可以包含碳化物、钨(W)、碳化钨(WC或W2C)、合成的金刚石、天然金刚石、铬(Cr)、铁(Fe)、镍(Ni)、或合适于增加基底70耐侵蚀性的其他材料。粉末混合物也可以包含铜(Cu)、锰(Mn)、磷(P)、氧(O)、锌(Zn)、锡(Sn)、镉(Cd)、铅(Pb)、铋(Bi)或碲(Te)。基质粉末可包含上面所述的材料的任意组合或混合物。Matrix powder 40 or 40a may be a powder, or any other material suitable for forming substrate 70 after infiltration with infiltrant material 50 (which may function as a binder). In particular embodiments, the matrix powder 40 or 40a may be a material commonly used to form the substrates of conventional PCD elements. Matrix powder 40 or 40a may also provide substrate 70 with advantageous properties such as rigidity, erosion resistance, toughness, and connection to TSP body 30 respectively. For example, it may be a carbide-containing powder or a carbide-forming powder. The infiltrant material 50 content of the substrate 70 can generally be higher than conventional PCD element substrates containing similar materials. As a result, the erosion resistance of substrate 70 may be lower than conventional substrates. A certain powder mixture can be used as matrix powder 40 to increase the erosion resistance of substrate 70 . In particular embodiments, the powder mixture may comprise carbides, tungsten (W), tungsten carbide (WC or W2C ), synthetic diamond, natural diamond, chromium (Cr), iron (Fe), nickel (Ni), Or other materials suitable for increasing the erosion resistance of the substrate 70 . The powder mix may also contain copper (Cu), manganese (Mn), phosphorus (P), oxygen (O), zinc (Zn), tin (Sn), cadmium (Cd), lead (Pb), bismuth (Bi) or Tellurium (Te). The matrix powder may comprise any combination or mixture of the materials described above.

在一些实施方式中,基质粉末40或40a可以有基本均一的粒度。然而,在其他实施方式中,根据基底70所需要的特性或者为了促进基底70与TSP体30通过浸渗或机械方法的连接,基质粉末40或40a的粒度可以有变化。例如,如使用组件10的那些浸渗方法,可以将具有更小粒度的基质粉末40的层置于与TSP体30相邻的位置。更小的粒度使得更多的浸渗剂材料50到达接触面100,从而使得浸渗剂材料50形成更强的连接。通常基质粉末40或40a的颗粒会是微米尺度或纳米尺度。例如平均粒径可以大于或等于5μm,例如5-6μm。平均粒径可以更高得多,例如100μm。这些粒度可以表示在从TSP体30延伸到基底70总长度的一半的基底70部分中发现的平均粒径。总之,基质粉末40或40a的粒度可以显著大于预形成的基材中可允许的粒度。In some embodiments, matrix powder 40 or 40a may have a substantially uniform particle size. However, in other embodiments, the particle size of matrix powder 40 or 40a may vary depending on the desired properties of substrate 70 or to facilitate attachment of substrate 70 to TSP body 30 by infiltration or mechanical means. For example, a layer of matrix powder 40 having a smaller particle size may be placed adjacent to TSP body 30 such as those infiltration methods using assembly 10 . The smaller particle size allows more of the infiltrant material 50 to reach the contact surface 100, thereby allowing the infiltrant material 50 to form a stronger connection. Typically the particles of matrix powder 40 or 40a will be microscale or nanoscale. For example, the average particle size may be greater than or equal to 5 μm, such as 5-6 μm. The average particle size can be much higher, eg 100 μm. These particle sizes may represent the average particle size found in the portion of substrate 70 extending from TSP body 30 to half of the total length of substrate 70 . In general, the particle size of the matrix powder 40 or 40a can be significantly larger than the allowable particle size in the pre-formed substrate.

尽管合适的材料通常是粉末形式,但是在一些实施方式中,基质粉末40或40a可以用非粉末材料代替,只要所述材料足以被浸渗剂材料50浸渗,形成基底70,并且与TSP体30的接触面100基本一致即可。Although suitable materials are generally in powder form, in some embodiments, matrix powder 40 or 40a may be replaced with a non-powder material that is sufficient to be infiltrated by infiltrant material 50, form substrate 70, and bond with the TSP body. The contact surfaces 100 of the 30 are basically the same.

浸渗剂材料50可以包括能将基质粉末40或40a浸渗以形成基底70的任何材料。在例如那些使用组件10a的热压法中,浸渗剂材料50可以与基质粉末40a在热压之前混合。在那些例如使用组件10的浸渗方法中,并且可能的但不是必需的,也在一些热压方法中,浸渗剂材料50也可以将接触面100浸润,并且浸渗入至少足够数目的、位于TSP体30的接触面100上的孔,从而通过浸渗剂材料50来形成TSP体30与基底70的结合。在特定的实施方式中,浸渗剂材料50可以是对金刚石有亲和性的材料,从而其易于将接触面100浸润,或者易于通过毛细作用或相似的吸引作用汲入孔中。在更特定的实施方式中,浸渗剂材料50可以包含合适用作PCD成形中的催化剂的材料,例如第VIII族金属如锰(Mn)或铬(Cr)。浸渗剂材料50也可以是碳化物或形成碳化物中使用的材料,例如钛(Ti)与铜(Cu)或银(Ag)的合金。在某些实施方式中,浸渗剂材料50可以是不同于在PCD形成过程中用作催化剂,然后被浸出以形成TSP体的材料。这使得容易检测催化剂与粘合剂的分离。然而,在其他实施方式中,浸渗剂材料和催化剂可以相同。The infiltrant material 50 may include any material capable of infiltrating the matrix powder 40 or 40 a to form the base 70 . In hot pressing methods such as those using assembly 10a, infiltrant material 50 may be mixed with matrix powder 40a prior to hot pressing. In those infiltration methods such as those using the assembly 10, and possible but not necessary, also in some hot pressing methods, the infiltrant material 50 may also wet the contact surface 100 and infiltrate at least a sufficient number of The pores on the contact surface 100 of the TSP body 30 form a bond between the TSP body 30 and the substrate 70 through the infiltrant material 50 . In particular embodiments, the infiltrant material 50 may be a material that has an affinity for diamond such that it tends to wet the contact surface 100, or tends to be drawn into the pores by capillary or similar attraction. In more particular embodiments, infiltrant material 50 may comprise a material suitable for use as a catalyst in PCD formation, such as a Group VIII metal such as manganese (Mn) or chromium (Cr). The infiltrant material 50 may also be a carbide or a material used in forming a carbide, such as an alloy of titanium (Ti) with copper (Cu) or silver (Ag). In certain embodiments, the infiltrant material 50 may be a different material than is used as a catalyst during PCD formation and then leached to form the TSP body. This makes it easy to detect the separation of the catalyst from the binder. However, in other embodiments, the infiltrant material and catalyst can be the same.

在特定实施方式中,浸渗剂材料50可以是合金,例如镍(Ni)合金或其他金属合金例如第VIII族金属合金。甚至当这种合金不适合在PCD形成过程中用作催化剂材料时,熔融温度的优势可以使合金适合用作浸渗剂材料。In particular embodiments, infiltrant material 50 may be an alloy, such as a nickel (Ni) alloy or other metal alloy such as a Group VIII metal alloy. Even when this alloy is unsuitable for use as a catalyst material in PCD formation, the advantage of the melting temperature can make the alloy suitable for use as an infiltrant material.

在形成超硬磨料元件60之后,浸渗剂材料50可以在基底70中发现,其在基底70中可以发挥粘合剂的功能。浸渗剂材料50也可以在TSP体30中接触面100附近的经填充的孔中发现。在一些实施方式中,浸渗剂材料50可以基本限定在接触面100和向所述接触面开放的孔中。然而,在其他实施方式中,浸渗剂材料50也可以进入接触面100附近的孔中。包含浸渗剂材料50的TSP体30部分可以形成包含浸渗剂材料的区域80,而其余的TSP体30基本不含粘合剂,可以形成不含浸渗剂的区域90。根据特定实施方式,浸渗剂材料50从接触面100渗透入TSP体30内直到D的深度,所述深度D可以是足以使得TSP体30与基底70结合的任意平均深度。在特定实施方式中,其可以不大于100μm。在其他特定实施方式中,其可以不大于粒度的4倍,不大于粒度的2倍、不大于粒度的1倍、不大于粒度的一半、不大于粒度的四分之一,其中粒度是针对在接触面100上或其附近的金刚石颗粒。在其他实施方式中,浸渗剂材料50可以仅仅对接触面100上暴露孔的空间进行渗透。After superabrasive element 60 is formed, infiltrant material 50 may be found in substrate 70 where it may function as a binder. Infiltrant material 50 may also be found in filled pores in TSP body 30 near interface 100 . In some embodiments, infiltrant material 50 may be substantially confined within contact surface 100 and pores open to the contact surface. However, in other embodiments, the infiltrant material 50 may enter pores near the contact surface 100 as well. The portion of TSP body 30 that includes infiltrant material 50 may form region 80 that includes infiltrant material, while the remainder of TSP body 30 that is substantially free of binder may form region 90 that does not contain infiltrant. According to a particular embodiment, infiltrant material 50 penetrates into TSP body 30 from interface 100 to a depth D, which may be any average depth sufficient to bond TSP body 30 to substrate 70 . In a particular embodiment, it may be no greater than 100 μm. In other specific embodiments, it may be not greater than 4 times the particle size, not greater than 2 times the particle size, not greater than 1 time the particle size, not greater than half the particle size, not greater than a quarter of the particle size, wherein the particle size is for Diamond particles on or near the contact surface 100. In other embodiments, the infiltrant material 50 may infiltrate only the spaces of the exposed pores on the contact surface 100 .

浸渗剂材料50可以赋予TSP体30与催化剂赋予PCD的特性相似的特性。具体来说,浸渗剂材料50可能减少所发现的TSP体区域的耐磨性和热稳定性。在示例实施方式中,为了尽可能减小浸渗剂材料50对耐磨性和热稳定性的负面影响,将包含浸渗剂材料的区域80的深度D减少或尽可能减小到足以将TSP体30与基底70结合的量是有优势的。The infiltrant material 50 may impart properties to the TSP body 30 that are similar to those imparted by the catalyst to PCD. Specifically, the infiltrant material 50 may reduce the wear resistance and thermal stability found in the TSP bulk region. In an example embodiment, in order to minimize the negative impact of infiltrant material 50 on wear resistance and thermal stability, the depth D of region 80 containing infiltrant material is reduced or minimized enough to reduce the TSP The amount of body 30 bonded to substrate 70 is advantageous.

不受浸渗剂材料50结合机制的限制,根据某些实施方式,浸渗剂材料50将TSP体30与基底70结合的方式可以包括在TSP体30与基底70之间形成浸渗剂材料的物理连续基质。Without being limited by the mechanism by which infiltrant material 50 bonds, according to certain embodiments, the manner in which infiltrant material 50 bonds TSP body 30 to substrate 70 may include forming an infiltrant material between TSP body 30 and substrate 70. Physically continuous matrix.

基质粉末40或40a可以通过使用任意合适的成形工艺来形成基底70。在特定实施方式中,成形工艺可以提供一步式基底成形和连接,而不需要类似一些现有技术工艺,将成形和连接步骤分开。Matrix powder 40 or 40a may be formed into substrate 70 using any suitable forming process. In certain embodiments, the forming process can provide one-step substrate forming and joining without requiring separate forming and joining steps like some prior art processes.

在一个实施方式中,成形工艺可以是一步式浸渗工艺。通常,在这种工艺(在任意依赖于通过浸渗剂材料50将TSP体30浸渗以将其与基底70连接的热压工艺中也是如此)中,在接触面100上除了金刚石以外的任意材料可能对浸渗剂材料50的浸润和连接造成干扰,所以在某些实施方式中,在结合入组件10中之前,可以对TSP体30的接触面100进行清洁。组件10可以如上述组装,然后置于炉子中并加热到某个温度、加热一段时间,并且所述加热时间足以使得浸渗剂材料50将基质粉末40和TSP体30浸渗,并将基质粉末40铸造成基底70。特别地,所述炉子可以加热到浸渗剂材料50的浸渗温度或更高的温度。能使浸渗剂材料50浸渗的最低温度可以称为浸渗温度。在浸渗温度或更高温度所花费的时间可以是使基质粉末40浸渗以形成基底70以及将基底70与TSP体30连接所需的最短时间。在某些实施方式中,在浸渗温度或更高温度所花费的时间可以是60秒或短于60秒。为了在成形工艺中预防浸渗剂材料50或基质粉末40的氧化反应或污染,所述工艺在真空或无氧气氛(例如还原气氛或惰性气氛)中进行。In one embodiment, the forming process may be a one-step infiltration process. Typically, in such a process (as in any hot-pressing process that relies on infiltrating the TSP body 30 through the infiltrant material 50 to bond it to the substrate 70), any material other than diamond on the contact surface 100 The material may interfere with the wetting and bonding of the infiltrant material 50 , so in some embodiments, the contact surface 100 of the TSP body 30 may be cleaned prior to incorporation into the assembly 10 . The assembly 10 may be assembled as described above, then placed in a furnace and heated to a temperature for a period of time sufficient to allow the infiltrant material 50 to infiltrate the matrix powder 40 and the TSP body 30 and to infiltrate the matrix powder 40 and the TSP body 30. 40 is cast into base 70 . In particular, the furnace may be heated to the infiltration temperature of the infiltrant material 50 or higher. The lowest temperature at which the infiltrant material 50 can be infiltrated may be referred to as the infiltration temperature. The time spent at the infiltration temperature or higher may be the minimum time required to infiltrate matrix powder 40 to form base 70 and connect base 70 to TSP body 30 . In certain embodiments, the time spent at the infiltration temperature or higher may be 60 seconds or less. In order to prevent oxidation reaction or contamination of the infiltrant material 50 or the matrix powder 40 during the forming process, the process is performed in a vacuum or an oxygen-free atmosphere such as a reducing atmosphere or an inert atmosphere.

根据特定实施方式,由于吸引力例如毛细作用,浸渗剂材料50可以穿过基质粉末40。当到达TSP体30的接触面100时,浸渗剂材料50可以将表面浸润并与其结合。在特定的实施方式中,浸渗剂材料50进入开放孔中,并将其填充以形成填充的孔。浸渗剂材料50可以通过吸引力例如毛细作用汲入孔中。对于选择的浸渗剂材料50对金刚石有亲和性的情况而言尤其如此。According to a particular embodiment, infiltrant material 50 may pass through matrix powder 40 due to attractive forces, such as capillary action. Upon reaching the contact surface 100 of the TSP body 30, the infiltrant material 50 may wet and bond the surface. In a particular embodiment, infiltrant material 50 enters the open pores and fills them to form filled pores. The infiltrant material 50 may be drawn into the pores by attractive forces such as capillary action. This is especially true if the infiltrant material 50 is chosen to have an affinity for diamond.

加热后,组件10可以从炉子中移出,并冷却到比浸渗温度低的温度。在某些实施方式中,可以仔细控制冷却以将对基底70与TSP体30的连接的任何损害都降低或最小化。例如,可以进行控制以使得任何残余应力降低或最小化。最后,超硬磨料元件60可以从模具20中移出。After heating, assembly 10 may be removed from the furnace and cooled to a temperature below the infiltration temperature. In certain embodiments, cooling can be carefully controlled to reduce or minimize any damage to the connection of substrate 70 to TSP body 30 . For example, control can be performed such that any residual stresses are reduced or minimized. Finally, superabrasive element 60 may be removed from mold 20 .

根据另一个实施方式,组件10a可以用来通过一步式热压法形成超硬磨料元件60。如上所述,在一些实施方式中,由热压法产生的力可以提供TSP体30与基底70的充分的机械连接,通过浸渗材料的连接不是必需的或影响非常小。在这种实施方式中,TSP体30可以形成特定的形状,以促进这种机械连接。例如,其可以有如图4和图5所示的形状。在其他实施方式中,甚至当使用热压法时,TSP体30与基底70的连接可以部分依赖于或基本依赖于浸渗剂材料50对TSP体30的浸渗。在这种实施方式中,接触面100上的任意非金刚石的材料会对浸渗剂材料50的浸润和连接造成干扰,从而在结合入组件10a中之前,可以对TSP体30的接触面100进行清洁。According to another embodiment, assembly 10a may be used to form superabrasive element 60 by a one-step hot pressing process. As noted above, in some embodiments, the force generated by thermocompression can provide sufficient mechanical connection of TSP body 30 to substrate 70, with no or minimal effect of connection through an infiltrating material. In such embodiments, TSP body 30 may be shaped to facilitate this mechanical connection. For example, it may have a shape as shown in FIGS. 4 and 5 . In other embodiments, the attachment of TSP body 30 to substrate 70 may rely in part or substantially on infiltration of TSP body 30 with infiltrant material 50, even when thermal compression is used. In such an embodiment, any non-diamond material on the contact surface 100 would interfere with the wetting and bonding of the infiltrant material 50, so that the contact surface 100 of the TSP body 30 could be pretreated prior to incorporation into the assembly 10a. clean.

在清洁之后(如果进行清洁的话),TSP体30可以放入热压模具20a中,然后用基质粉末40a包封(pack),所述基质粉末可以包含基质材料和浸渗材料或粘合剂。然后可以封闭模具,并在某个温度和压力进行热压,所述温度和压力足以将浸渗剂材料或粘合剂熔融并且使其形成基材70。在浸渗剂材料将TSP体30浸渗的实施方式中,温度和压力也足以使这种浸渗发生。在某些实施方式中,热压可以包括随着时间而改变温度和压力的循环。After cleaning (if cleaning is performed), TSP body 30 may be placed into hot press mold 20a and then packed with matrix powder 40a, which may contain matrix material and impregnating material or binder. The mold may then be closed and hot pressed at a temperature and pressure sufficient to melt the infiltrant material or binder and form it into substrate 70 . In embodiments where the infiltrant material infiltrates the TSP body 30, the temperature and pressure are also sufficient to allow such infiltration to occur. In certain embodiments, heat pressing can include cycling of varying temperature and pressure over time.

根据某些实施方式,热压可以在惰性气氛或还原性气氛中进行以预防或降低对TSP体30的破坏。或者,可以仔细控制温度以防止TSP体30被氧化。According to certain embodiments, hot pressing may be performed in an inert atmosphere or a reducing atmosphere to prevent or reduce damage to the TSP body 30 . Alternatively, the temperature can be carefully controlled to prevent oxidation of the TSP body 30 .

热压可以用于形成单个超硬磨料元件60,或者可以在相同时间加工多个组件10a以同时形成多个超硬磨料元件60。在任意情况下,各个超硬磨料元件可以在热压完成之后从模具20a中移出。Hot pressing may be used to form a single superabrasive element 60, or multiple assemblies 10a may be processed at the same time to form multiple superabrasive elements 60 simultaneously. In any event, the individual superabrasive elements may be removed from mold 20a after hot pressing is complete.

在任意浸渗工艺中,所用的温度和压力可以超出传统金刚石稳定的范围。PCD降解成石墨的温度和压力为本领域已知,并描述于文献中。例如,金刚石稳定的范围可以通过参考如下文献来确定:Bundy等,“Diamond-Graphite Equilibrium Line fromGrowth and Graphitization of Diamond(金刚石的生长和石墨化的金刚石-石墨平衡曲线)”J.of Chemical Physics,35(2):383-391(1961),Kennedy和Kennedy,“theEquilibrium Boundary Between Graphite and Diamond(石墨和金刚石之间的平衡边界)”J.of Geophysical Res.,81(14):2467-2470(1976)和Bundy等,“ThePressure-Temperature Phase and Transformation Diagram for Carbon;Updated through1994(对碳的压力-温度相和转化图;从1994更新)”Carbon34(2):141-153(1996),各自通过引用纳入本文的材料部分。TSP的高稳定特性可以使其在形成超硬磨料元件60所需的时间内,耐受超出金刚石稳定范围的温度和压力。例如,在浸渗工艺中使用的压力下,温度可以高达1100℃或1200℃。In any infiltration process, the temperature and pressure used can be outside the stable range of traditional diamond. The temperatures and pressures at which PCD degrades to graphite are known in the art and described in the literature. For example, the range of diamond stability can be determined by referring to the following documents: Bundy et al., "Diamond-Graphite Equilibrium Line from Growth and Graphitization of Diamond (diamond-graphite equilibrium curve of diamond growth and graphitization)" J.of Chemical Physics, 35 (2):383-391(1961), Kennedy and Kennedy, "the Equilibrium Boundary Between Graphite and Diamond" J.of Geophysical Res.,81(14):2467-2470(1976 ) and Bundy et al., "The Pressure-Temperature Phase and Transformation Diagram for Carbon; Updated through 1994" Carbon 34(2):141-153 (1996), each by reference Incorporated into the Materials section of this article. The high stability characteristics of TSP allow it to withstand temperatures and pressures outside the stable range of diamond for the time required to form superabrasive element 60 . For example, the temperature can be as high as 1100°C or 1200°C at the pressures used in the infiltration process.

通常,如果仔细控制压力,可以使用有更高熔融温度的浸渗剂,从而降低在井下条件或其他苛刻条件下浸渗剂熔融的可能性。Often, if the pressure is carefully controlled, an infiltrant with a higher melting temperature can be used, thereby reducing the likelihood of the infiltrant melting under downhole conditions or other severe conditions.

尽管可能使用超出金刚石稳定范围的温度和压力,在很多实施方式中,例如在一些热压法中,温度和压力可以在金刚石稳定范围内。例如,一些热压技术可以使用850℃~900℃的温度,特别是870℃。Although it is possible to use temperatures and pressures outside the diamond stable range, in many embodiments, such as in some hot pressing methods, the temperature and pressure can be within the diamond stable range. For example, some hot pressing techniques may use temperatures in the range of 850°C to 900°C, especially 870°C.

除了造成如上述耐侵蚀性的降低以外,与传统PCD元件基材中相似量的催化剂或粘合剂相比,基底70中存在其他浸渗剂材料50造成了基底70的硬度低于传统基材。这可能会造成在超硬磨料元件60的使用过程中,TSP体30上的弯曲应力增加。为了增大基底70的硬度,基底70可以包含图6所示的碳化物插件140。碳化物插件140可以由没有粘合剂或近于没有粘合剂的碳化物制成,并且可以对浸渗剂材料50的浸渗有耐受性。碳化物插件140可以置于组件10中的基质粉末40内。在超硬磨料元件60成形之后,基底70中存在的碳化物插件140的构型与碳化物插件140置于基质粉末40中时的构型可以基本相同。除了增加基底70的硬度以外,碳化物插件140可以在研磨之后暴露于超硬磨料元件60的非TSP体末端,并且然后可以用作钎焊工艺中的连接点或者超硬磨料元件的旋转或替换的引导器。在另一个实施方式中,插件可以由除了碳化物以外的其他合适材料(例如陶瓷)制成。In addition to causing a reduction in erosion resistance as described above, the presence of other infiltrant materials 50 in substrate 70 contributes to a lower hardness of substrate 70 than conventional substrates compared to similar amounts of catalyst or binder in conventional PCD element substrates. . This may cause increased bending stress on TSP body 30 during use of superabrasive element 60 . To increase the hardness of the base 70, the base 70 may include a carbide insert 140 as shown in FIG. The carbide insert 140 may be made of binder-free or near-binder-free carbide and may be resistant to infiltration by the infiltrant material 50 . Carbide insert 140 may be placed within matrix powder 40 in assembly 10 . After the superabrasive element 60 is formed, the carbide insert 140 present in the substrate 70 may have substantially the same configuration as the carbide insert 140 when placed in the matrix powder 40 . In addition to increasing the hardness of the substrate 70, the carbide insert 140 can be exposed to the non-TSP body end of the superabrasive element 60 after grinding, and can then be used as a connection point in a brazing process or rotation or replacement of the superabrasive element the bootstrap. In another embodiment, the insert may be made of other suitable materials than carbide, such as ceramic.

本发明的超硬磨料元件可以是从TSP表面获益的任意元件形式。在特定实施方式中,其可以是大地钻井钻头的切割体或工业工具的部件。本发明的实施方式也包括含有本发明超硬磨料元件的工具。特定的实施方式包括工业工具和大地钻井钻头,例如固定切割体的钻头。其他特定实施方式包含耐磨元件、轴承或者高压流体的喷嘴。The superabrasive elements of the present invention can be any element form that would benefit from a TSP surface. In particular embodiments, it may be a cutting body of an earth-boring drill bit or a component of an industrial tool. Embodiments of the invention also include tools comprising the superabrasive elements of the invention. Particular embodiments include industrial tools and earth drilling bits, such as fixed cutter bits. Other particular embodiments include wear-resistant elements, bearings, or nozzles for high-pressure fluid.

由于浸出TSP体30的能力,当与基材结合时,可通常对多于一个的PCD层进行浸出,所以在有传统浸出的PCD层的多个元件不能使用的情况下可以使用本发明的超硬磨料体。例如,可以在比有传统浸出的PCD层的相似元件更高的温度下使用超硬磨料元件。Due to the ability to leach the TSP body 30, when combined with a substrate, more than one PCD layer can typically be leached, so the superstructure of the present invention can be used where multiple components with conventionally leached PCD layers cannot be used. Hard abrasive body. For example, superabrasive elements can be used at higher temperatures than similar elements with conventionally leached PCD layers.

当本发明超硬磨料元件用作大地钻井钻头的切割体,其可以用于替换任意传统浸出的PCD切割体。在很多实施方式中,其可以通过基底70与钻头连接。例如,基底70可以通过钎焊与钻头中的空腔连接。When the superabrasive element of the present invention is used as a cutting body for an earth drilling bit, it can be used to replace any conventional leached PCD cutting body. In many embodiments, it can be connected to the drill bit through the base 70 . For example, the substrate 70 may be connected to the cavity in the drill bit by brazing.

当在钻头的切割部分使用时,所述切割体的工作表面的磨损会比TSP体30其他部分的磨损更快。当使用如图2所示的圆形切割体时,所述切割体可以旋转以将磨损的TSP从工作表面移出,并且将未使用的TSP移动到工作表面。在切割体由于磨损程度过高以至于不能使用之前,根据本发明的圆形切割体可以以这种方式至少旋转两次,经常旋转三次。连接和旋转的方法可以是使用传统浸出的PCD切割体的情况下采用的任意方法或其他方法。相似地,非圆形切割体可以是可转位的(indexable)切割体,使其移动以替换磨损的工作表面,而不是替换整个切割体。When used in the cutting portion of a drill, the working surface of the cutting body will wear faster than the rest of the TSP body 30 . When using a circular cutting body as shown in Figure 2, the cutting body can be rotated to dislodge worn TSP from the work surface and move unused TSP to the work surface. The circular cutting body according to the invention can be rotated in this way at least twice, often three times, before the cutting body becomes unusable due to excessive wear. The method of connection and rotation may be any method employed in the case of conventionally leached PCD cutting bodies or otherwise. Similarly, the non-circular cutting body may be indexable so that it moves to replace a worn working surface rather than replacing the entire cutting body.

使用如图6所示形状插件或其他合适形状插件的实施方式中,所述插件可以用作将工作表面对齐的引导器,从而在使用超硬磨料元件过程中,工作表面还会受到来自所述插件的额外的支持。例如,当使用如图6所示的插件时,可以将元件对齐,从而其工作表面基本沿着一个插件臂,而不在两个臂之间。In embodiments using inserts of the shape shown in FIG. 6 or other suitable shapes, the inserts can be used as guides to align the working surface so that during use of the superabrasive elements the working surface is also subjected to stress from the Additional support for plugins. For example, when using an insert as shown in Figure 6, the components can be aligned so that their working surface is substantially along one arm of the insert and not between two arms.

除了能旋转以外,传统PCD切割体也可以从钻头移出。这使得能将磨损的或损坏的切割体替换,或能针对所钻探的岩层替换更优选的不同切割体。由于能够替换切割体,显著延长了大地钻井钻头的整体使用寿命,并且使其能在不同的岩层中使用。使用根据本发明的超硬磨料元件形成的切割体也可以通过针对传统浸出的PCD切割体使用的任意方法来移出和替换。In addition to being able to rotate, conventional PCD cutting bodies can also be removed from the drill bit. This enables a worn or damaged cutting body to be replaced, or a different cutting body which is more preferable for the rock formation being drilled. The ability to replace the cutting body significantly extends the overall life of the earth drilling bit and enables it to be used in different rock formations. Cutting bodies formed using superabrasive elements according to the present invention may also be removed and replaced by any of the methods used for conventional leached PCD cutting bodies.

在某些其他实施方式中,本发明的超硬磨料元件可以用于引导流体流或用于大地钻井钻头中的腐蚀控制。例如,可以用来代替以下文献所述的磨料结构:U.S.7,730,976;U.S.6,510,906;或U.S.6,843,333,各自通过引用纳入材料部分。In certain other embodiments, the superabrasive elements of the present invention may be used to direct fluid flow or for corrosion control in earth drilling drill bits. For example, it may be used in place of the abrasive structures described in U.S. 7,730,976; U.S. 6,510,906; or U.S. 6,843,333, each incorporated by reference in the Materials section.

尽管上面仅仅详细描述了本发明的示例性实施方式,但是应该了解在不偏离本发明的精神和预期保护范围的情况下可以对这些示例进行改良和变化。例如,尽管详细讨论了超硬磨料元件,但是包含相似部件(例如浸出的立方氮化硼)的其他元件以及形成这种元件的相似方法也是可以采用的。Although only exemplary embodiments of the present invention have been described in detail above, it should be understood that modifications and changes can be made to these examples without departing from the spirit and intended protection scope of the present invention. For example, while superabrasive elements are discussed in detail, other elements comprising similar components, such as leached cubic boron nitride, and similar methods of forming such elements may be used.

Claims (58)

1.一种超硬磨料元件,所述元件包括:1. A superabrasive element, said element comprising: 基本不含催化剂的热稳定性多晶金刚石(TSP)体,所述金刚石(TSP)体包括孔和接触面;A thermally stable polycrystalline diamond (TSP) body substantially free of catalyst, the diamond (TSP) body comprising pores and contact surfaces; 基底,所述基底与所述TSP体的接触面相邻;和a substrate adjacent to the contact surface of the TSP body; and 非催化剂合金浸渗剂材料,所述浸渗剂材料浸渗入所述基底和所述TSP体接触面处的孔中。A non-catalyst alloy infiltrant material that infiltrates the pores at the interface of the substrate and the TSP body. 2.如权利要求1所述的超硬磨料元件,其特征在于,所述基本不含催化剂的TSP体包含多晶金刚石(PCD),至少85%的催化剂已从所述多晶金刚石(PCD)中除去以形成孔。2. The superabrasive element of claim 1, wherein the substantially catalyst-free TSP body comprises polycrystalline diamond (PCD), at least 85% of the catalyst has been removed from the polycrystalline diamond (PCD) removed to form holes. 3.如权利要求1所述的超硬磨料元件,其特征在于,所述基本不含催化剂的热稳定性多晶金刚石TSP体包括经酸浸出的TSP体。3. The superabrasive element of claim 1, wherein the substantially catalyst-free thermally stable polycrystalline diamond TSP body comprises acid-leached TSP body. 4.如权利要求3所述的超硬磨料元件,其特征在于,所述经酸浸出的TSP体包括经FeCl3-酸浸出的TSP体。4. The superabrasive element of claim 3, wherein the acid-leached TSP body comprises FeCl3 -acid-leached TSP body. 5.如权利要求1所述的超硬磨料元件,其特征在于,所述TSP体包含具有平均粒度的金刚石颗粒,并且所述浸渗剂材料在所述TSP体的孔中浸渗达一个深度,所述深度从所述接触表面计等于或小于平均粒度的两倍。5. The superabrasive element of claim 1 , wherein the TSP body comprises diamond particles having an average particle size, and the infiltrant material is infiltrated to a depth in the pores of the TSP body , the depth is equal to or less than twice the average particle size from the contact surface. 6.如权利要求1所述的超硬磨料元件,其特征在于,所述接触面是不平坦的面。6. The superabrasive element of claim 1, wherein the contact surface is an uneven surface. 7.如权利要求1所述的超硬磨料元件,其特征在于,所述基底包含选自下组的材料:碳化物、钨、碳化钨、合成金刚石、天然金刚石、或镍、铬、铁、铜、锰、磷、氧、锌、锡、镉、铅、铋、碲及其任意组合。7. The superabrasive element of claim 1, wherein the substrate comprises a material selected from the group consisting of carbide, tungsten, tungsten carbide, synthetic diamond, natural diamond, or nickel, chromium, iron, Copper, manganese, phosphorus, oxygen, zinc, tin, cadmium, lead, bismuth, tellurium and any combination thereof. 8.如权利要求1所述的超硬磨料元件,其特征在于,所述超硬磨料元件还包括置于所述基底中的碳化物插件。8. The superabrasive element of claim 1, further comprising a carbide insert disposed in the substrate. 9.如权利要求1所述的超硬磨料元件,其特征在于,所述非催化剂合金浸渗剂材料包含第VIII族金属合金。9. The superabrasive element of claim 1, wherein the non-catalyst alloy infiltrant material comprises a Group VIII metal alloy. 10.如权利要求1所述的超硬磨料元件,其特征在于,所述超硬磨料元件是用于大地钻井钻头的切割体的形式。10. The superabrasive element of claim 1, wherein the superabrasive element is in the form of a cutting body for an earth drilling bit. 11.一种超硬磨料元件,所述元件包括:11. A superabrasive element comprising: 基本不含催化剂的热稳定性多晶金刚石(TSP)体,所述金刚石(TSP)体具有孔、接触面、和金刚石颗粒,所述金刚石颗粒有平均粒度;a substantially catalyst-free thermally stable polycrystalline diamond (TSP) body having pores, contact surfaces, and diamond particles having an average particle size; 基底,所述基底与所述TSP体的接触面相邻;和a substrate adjacent to the contact surface of the TSP body; and 浸渗剂材料,所述浸渗剂材料浸渗入所述基底中并浸渗到所述TSP体接触面的孔中达一个深度,所述深度从所述接触面计等于或小于平均粒度的两倍。an infiltrant material that impregnates the substrate and into the pores of the TSP body interface to a depth equal to or less than two times the average particle size from the interface. times. 12.如权利要求11所述的超硬磨料元件,其特征在于,所述基本不含催化剂的TSP体包含多晶金刚石(PCD),至少85%的催化剂已从所述多晶金刚石除去以形成孔。12. The superabrasive element of claim 11 , wherein the substantially catalyst-free TSP body comprises polycrystalline diamond (PCD) from which at least 85% of the catalyst has been removed to form hole. 13.如权利要求11所述的超硬磨料元件,其特征在于,所述基本不含催化剂的热稳定性多晶金刚石TSP体包括经酸浸出的TSP体。13. The superabrasive element of claim 11, wherein the substantially catalyst-free thermally stable polycrystalline diamond TSP body comprises an acid-leached TSP body. 14.如权利要求13所述的超硬磨料元件,其特征在于,所述经酸浸出的TSP体包括经FeCl3-酸浸出的TSP体。14. The superabrasive element of claim 13, wherein the acid-leached TSP body comprises FeCl3 -acid-leached TSP body. 15.如权利要求11所述的超硬磨料元件,其特征在于,所述接触面是不平坦的面。15. The superabrasive element of claim 11, wherein the contact surface is an uneven surface. 16.如权利要求11所述的超硬磨料元件,其特征在于,所述基底包含选自下组的材料:碳化物、钨、碳化钨、合成的金刚石、天然金刚石、或镍、铬、铁、铜、锰、磷、氧、锌、锡、镉、铅、铋、碲及其任意组合。16. The superabrasive element of claim 11 , wherein the substrate comprises a material selected from the group consisting of carbide, tungsten, tungsten carbide, synthetic diamond, natural diamond, or nickel, chromium, iron , copper, manganese, phosphorus, oxygen, zinc, tin, cadmium, lead, bismuth, tellurium and any combination thereof. 17.如权利要求11所述的超硬磨料元件,其特征在于,所述超硬磨料元件还包含置于所述基底中的碳化物插件。17. The superabrasive element of claim 11, further comprising a carbide insert disposed in the substrate. 18.如权利要求11所述的超硬磨料元件,其特征在于,所述浸渗剂材料包含第VIII族金属。18. The superabrasive element of claim 11, wherein the infiltrant material comprises a Group VIII metal. 19.如权利要求11所述的超硬磨料元件,其特征在于,所述超硬磨料元件是用于大地钻井钻头的切割体的形式。19. The superabrasive element of claim 11, wherein the superabrasive element is in the form of a cutting body for an earth drilling bit. 20.一种包括切割体的大地钻井钻头,所述切割体包括超硬磨料元件,所述元件包括:20. An earth drilling bit comprising a cutting body comprising a superabrasive element comprising: 基本不含催化剂的热稳定性多晶金刚石(TSP)体,所述金刚石(TSP)体包含孔和接触面;A thermally stable polycrystalline diamond (TSP) body substantially free of catalyst, the diamond (TSP) body comprising pores and contact surfaces; 基底,所述基底与所述TSP体的接触面相邻;和a substrate adjacent to the contact surface of the TSP body; and 非催化剂合金浸渗剂材料,所述浸渗剂材料浸渗入所述基底中并浸渗到所述TSP体接触面处的孔中。A non-catalyst alloy infiltrant material that infiltrates into the substrate and into the pores at the TSP body interface. 21.如权利要求20所述的大地钻井钻头,其特征在于,所述基本不含催化剂的TSP体包含多晶金刚石(PCD),至少85%的催化剂已从所述多晶金刚石除去以形成孔。21. The earth-boring drill bit of claim 20, wherein the substantially catalyst-free TSP body comprises polycrystalline diamond (PCD) from which at least 85% of the catalyst has been removed to form pores . 22.如权利要求20所述的大地钻井钻头,其特征在于,所述基本不含催化剂的热稳定性多晶金刚石TSP体包括经酸浸出的TSP体。22. The earth-boring drill bit of claim 20, wherein the substantially catalyst-free thermally stable polycrystalline diamond TSP body comprises an acid-leached TSP body. 23.如权利要求22所述的大地钻井钻头,其特征在于,所述经酸浸出的TSP体包括经FeCl3-酸浸出的TSP体。23. The earth-boring drill bit of claim 22, wherein the acid-leached TSP body comprises FeCl3 -acid-leached TSP body. 24.如权利要求20所述的大地钻井钻头,其特征在于,所述TSP体包含具有平均粒度的金刚石颗粒,并且所述浸渗剂材料在所述TSP体的孔中浸渗达一个深度,所述深度从所述接触面计等于或小于平均粒度的两倍。24. The earth drilling bit of claim 20, wherein the TSP body comprises diamond particles having an average grain size, and the infiltrant material is infiltrated into the pores of the TSP body to a depth, The depth is equal to or less than twice the average particle size from the contact surface. 25.如权利要求20所述的大地钻井钻头,其特征在于,所述接触面是不平坦的面。25. The earth-boring bit of claim 20, wherein the contact surface is an uneven surface. 26.如权利要求20所述的大地钻井钻头,其特征在于,所述基底包含选自下组的材料:碳化物、钨、碳化钨、合成的金刚石、天然金刚石、或镍、铬、铁、铜、锰、磷、氧、锌、锡、镉、铅、铋、碲及其任意组合。26. The earth drilling bit of claim 20, wherein the substrate comprises a material selected from the group consisting of carbide, tungsten, tungsten carbide, synthetic diamond, natural diamond, or nickel, chromium, iron, Copper, manganese, phosphorus, oxygen, zinc, tin, cadmium, lead, bismuth, tellurium and any combination thereof. 27.如权利要求20所述的大地钻井钻头,其特征在于,所述超硬磨料元件还包含置于所述基底中的碳化物插件。27. The earth drilling bit of claim 20, wherein the superabrasive element further comprises a carbide insert disposed in the substrate. 28.如权利要求20所述的大地钻井钻头,其特征在于,所述非催化剂合金浸渗剂材料包含第VIII族金属合金。28. The earth drilling bit of claim 20, wherein the non-catalyst alloy infiltrant material comprises a Group VIII metal alloy. 29.如权利要求20所述的大地钻井钻头,其特征在于,所述钻头是固定切割体的钻头。29. The earth drilling bit of claim 20, wherein the bit is a fixed cutting body bit. 30.如权利要求20所述的大地钻井钻头,其特征在于,所述切割体包括可旋转和可替代的切割体。30. The earth-boring drill bit of claim 20, wherein the cutting body comprises a rotatable and displaceable cutting body. 31.一种包括切割体的大地钻井钻头,所述切割体包括超硬磨料元件,所述元件包括:31. An earth drilling bit comprising a cutting body comprising a superabrasive element comprising: 基本不含催化剂的热稳定性多晶金刚石(TSP)体,所述金刚石(TSP)体具有孔、接触面、和金刚石颗粒,所述金刚石颗粒具有平均粒度;a substantially catalyst-free thermally stable polycrystalline diamond (TSP) body having pores, contact surfaces, and diamond particles having an average particle size; 基底,所述基底与所述TSP体的接触面相邻;和a substrate adjacent to the contact surface of the TSP body; and 浸渗剂材料,所述浸渗剂材料浸渗到所述基底中并浸渗到所述TSP体接触面处的孔中达一个深度,所述深度从所述接触面计等于或小于平均粒度的两倍。an infiltrant material that impregnates the substrate and into the pores at the TSP body interface to a depth equal to or less than an average particle size from the interface twice as much. 32.如权利要求31所述的大地钻井钻头,其特征在于,所述基本不含催化剂的TSP体包含多晶金刚石(PCD),至少85%的催化剂已从所述多晶金刚石除去以形成孔。32. The earth drilling bit of claim 31 , wherein the substantially catalyst-free TSP body comprises polycrystalline diamond (PCD) from which at least 85% of the catalyst has been removed to form pores . 33.如权利要求31所述的大地钻井钻头,其特征在于,所述基本不含催化剂的热稳定性多晶金刚石TSP体包括经酸浸出的TSP体。33. The earth-boring drill bit of claim 31, wherein the substantially catalyst-free thermally stable polycrystalline diamond TSP body comprises an acid-leached TSP body. 34.如权利要求33所述的大地钻井钻头,其特征在于,所述经酸浸出的TSP体包括经FeCl3-酸浸出的TSP体。34. The earth-boring drill bit of claim 33, wherein the acid-leached TSP body comprises FeCl3 -acid-leached TSP body. 35.如权利要求31所述的大地钻井钻头,其特征在于,所述接触面是不平坦的面。35. The earth-boring bit of claim 31, wherein the contact surface is an uneven surface. 36.如权利要求31所述的大地钻井钻头,其特征在于,所述基底包含选自下组的材料:碳化物、钨、碳化钨、合成的金刚石、天然金刚石、或镍、铬、铁、铜、锰、磷、氧、锌、锡、镉、铅、铋、碲及其任意组合。36. The earth drilling bit of claim 31 , wherein the substrate comprises a material selected from the group consisting of carbide, tungsten, tungsten carbide, synthetic diamond, natural diamond, or nickel, chromium, iron, Copper, manganese, phosphorus, oxygen, zinc, tin, cadmium, lead, bismuth, tellurium and any combination thereof. 37.如权利要求31所述的大地钻井钻头,其特征在于,所述超硬磨料元件还包含置于所述基底中的碳化物插件。37. The earth-boring drill bit of claim 31, wherein the superabrasive element further comprises a carbide insert disposed in the substrate. 38.如权利要求31所述的大地钻井钻头,其特征在于,所述浸渗剂材料包含第VIII族金属。38. The earth well drilling bit of claim 31, wherein the infiltrant material comprises a Group VIII metal. 39.如权利要求31所述的大地钻井钻头,其特征在于,所述钻头是固定切割体的钻头。39. The earth drilling bit of claim 31, wherein the bit is a fixed cutting body bit. 40.如权利要求31所述的大地钻井钻头,其特征在于,所述切割体包括可旋转和可替代的切割体。40. The earth-boring drill bit of claim 31, wherein the cutting body comprises a rotatable and displaceable cutting body. 41.一种形成超硬磨料元件的方法,所述方法包括:41. A method of forming a superabrasive element, the method comprising: 将组件组装,所述组件包括:Assemble the components including: 具有底部的模具;a mold having a bottom; 热稳定性多晶金刚石(TSP)体,所述金刚石(TSP)体有孔和接触面,并且位于所述模具的底部以内;a thermally stable polycrystalline diamond (TSP) body having holes and contact surfaces and located within the bottom of the mold; 基质粉末,所述基质粉末置于与所述接触面相邻,并且位于所述模具以内的TSP体之上的位置;和a matrix powder positioned adjacent to the interface and above the TSP body within the mold; and 浸渗剂材料,所述浸渗剂材料置于所述模具中的基质粉末之上;an infiltrant material placed over the matrix powder in the mold; 将所述组件在一个压力条件下加热到一个温度并加热一段时间,所述加热时间足以使得浸渗剂材料对所述基质粉末和TSP体的孔进行浸渗;和heating the assembly under a pressure condition to a temperature and for a time sufficient to infiltrate the pores of the matrix powder and TSP body with an infiltrant material; and 对所述组件进行冷却以形成超硬磨料元件。The assembly is cooled to form a superabrasive element. 42.如权利要求41所述的方法,其特征在于,所述方法还包括在将所述组件组装之前,形成所述TSP体。42. The method of claim 41, further comprising forming the TSP body prior to assembling the components. 43.如权利要求41所述的方法,其特征在于,形成所述TSP体的步骤包括对多晶金刚石密实体(PCD)进行浸出,以从间隙基质除去催化剂并形成孔,所述多晶金刚石密实体包含金刚石基质和含有催化剂的间隙基质。43. The method of claim 41 , wherein the step of forming the TSP body comprises leaching a polycrystalline diamond compact (PCD) to remove catalyst from the interstitial matrix and form pores, the polycrystalline diamond The compact consists of a diamond matrix and an interstitial matrix containing catalyst. 44.如权利要求43所述的方法,其特征在于,所述浸出包括用含有FeCl3的酸法浸出试剂进行浸出。44. The method of claim 43, wherein said leaching comprises leaching with an acid leaching reagent comprising FeCl3 . 45.如权利要求43所述的方法,其特征在于,所述方法还包括从PCD除去至少85%的催化剂。45. The method of claim 43, further comprising removing at least 85% of the catalyst from the PCD. 46.如权利要求41所述的方法,其特征在于,所述方法还包括用浸渗剂材料至少将所述接触面上暴露的孔浸渗。46. The method of claim 41, further comprising infiltrating at least the exposed pores of the interface with an infiltrant material. 47.如权利要求41所述的方法,其特征在于,所述将组件组装的步骤还包括将碳化物插件置于基质粉末中。47. The method of claim 41, wherein the step of assembling the component further comprises placing a carbide insert in the matrix powder. 48.如权利要求41所述的方法,其特征在于,所述方法还包括在将所述组件组装之前,对所述TSP体的接触面进行清洁。48. The method of claim 41, further comprising cleaning contact surfaces of the TSP body prior to assembling the assembly. 49.如权利要求41所述的方法,其特征在于,所述方法还包括从底部冷却所述组件。49. The method of claim 41, further comprising cooling the assembly from the bottom. 50.一种形成超硬磨料元件的方法,所述方法包括:50. A method of forming a superabrasive element, the method comprising: 将组件组装,所述组件包括:Assemble the components including: 具有底部的模具;a mold having a bottom; 热稳定性多晶金刚石(TSP)体,所述金刚石(TSP)体有孔和接触面,并且位于模具的底部以内;a thermally stable polycrystalline diamond (TSP) body having holes and contact surfaces and located within the bottom of the mold; 基质粉末,所述基质粉末置于与所述接触面相邻,并且位于所述模具内的TSP体之上的位置;和a matrix powder positioned adjacent to the interface and over the TSP body within the mold; and 浸渗剂材料,所述浸渗剂材料置于所述模具中的基质粉末之中;an infiltrant material placed within the matrix powder in the mould; 将所述组件在一种压力条件下加热到一个温度并加热一段时间,所述加热时间足以使得浸渗剂材料对所述基质粉末和TSP体的孔进行浸渗;和heating the assembly under a pressure condition to a temperature and for a time sufficient to infiltrate the matrix powder and pores of the TSP body with an infiltrant material; and 对所述组件进行冷却以形成超硬磨料元件。The assembly is cooled to form a superabrasive element. 51.如权利要求50所述的方法,其特征在于,所述方法还包括在将所述组件组装之前,形成所述TSP体。51. The method of claim 50, further comprising forming the TSP body prior to assembling the components. 52.如权利要求50所述的方法,其特征在于,形成所述TSP体的步骤包括对多晶金刚石密实体(PCD)进行浸出以从间隙基质除去催化剂并形成孔,所述密实体包含金刚石基质和含有催化剂的间隙基质。52. The method of claim 50, wherein the step of forming the TSP body comprises leaching a polycrystalline diamond compact (PCD) to remove catalyst from the interstitial matrix and form pores, the compact comprising diamond Substrate and interstitial substrate containing catalyst. 53.如权利要求52所述的方法,其特征在于,所述浸出包括用含有FeCl3的酸法浸出试剂进行浸出。53. The method of claim 52, wherein said leaching comprises leaching with an acid leaching reagent comprising FeCl3 . 54.如权利要求52所述的方法,其特征在于,所述方法还包括从所述PCD中除去至少85%的催化剂。54. The method of claim 52, further comprising removing at least 85% of the catalyst from the PCD. 55.如权利要求50所述的方法,其特征在于,所述方法还包括用浸渗剂材料至少将所述接触面上暴露的孔浸渗。55. The method of claim 50, further comprising infiltrating at least the exposed pores of the interface with an infiltrant material. 56.如权利要求50所述的方法,其特征在于,所述方法还包括将碳化物插件置于基质粉末中。56. The method of claim 50, further comprising placing a carbide insert in the matrix powder. 57.如权利要求50所述的方法,其特征在于,所述方法还包括在将所述组件组装之前,对所述TSP体的接触面进行清洁。57. The method of claim 50, further comprising cleaning contact surfaces of the TSP body prior to assembling the assembly. 58.如权利要求50所述的方法,其特征在于,所述方法还包括从底部冷却所述组件。58. The method of claim 50, further comprising cooling the assembly from the bottom.
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