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CN104183531B - Lead wire clamping system - Google Patents

Lead wire clamping system Download PDF

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Publication number
CN104183531B
CN104183531B CN201310189028.XA CN201310189028A CN104183531B CN 104183531 B CN104183531 B CN 104183531B CN 201310189028 A CN201310189028 A CN 201310189028A CN 104183531 B CN104183531 B CN 104183531B
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module
power
clamping system
voltage
microprocessor
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CN104183531A (en
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隆志力
张建国
刘谋洋
李泽湘
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Guangdong Hust Industrial Technology Research Institute
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Guangdong Hust Industrial Technology Research Institute
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)

Abstract

本发明提供一种引线夹持系统,包括压电式微夹持器及压电式驱动系统,所述压电式驱动系统包括微处理器模块、D/A波形产生模块、高压运放模块、功率放大模块、高压自举式电源模块及上电时序控制模块。本发明的引线夹持系统不易受电磁干扰、装配简单、不易烧毁音圈电机。

The invention provides a lead wire clamping system, which includes a piezoelectric micro-gripper and a piezoelectric drive system. The piezoelectric drive system includes a microprocessor module, a D/A waveform generation module, a high-voltage operational amplifier module, a power Amplifying module, high-voltage bootstrap power supply module and power-on sequence control module. The lead wire clamping system of the invention is not susceptible to electromagnetic interference, is simple to assemble, and is not easy to burn the voice coil motor.

Description

引线夹持系统Lead Clamping System

技术领域technical field

本发明涉及半导体封装领域,尤其涉及一种引线夹持系统。The invention relates to the field of semiconductor packaging, in particular to a lead clamping system.

背景技术Background technique

IC/LED焊线机用于焊接LED、三极管、IC集成电路内部引线,是半导体封装生产线重要的设备。引线夹持器是组成IC/LED焊线机的核心部分,一般采用电磁式微夹持器。电磁式微夹持器的一端为固定的夹持臂,另一端由音圈电机驱动,其优点是控制电压低、较易安装并固定引线导入孔,其缺点是易受电磁干扰、装配复杂、在受到外力干扰时容易烧毁音圈电机。IC/LED wire bonding machine is used for welding LED, triode, and IC integrated circuit internal leads, and is an important equipment for semiconductor packaging production line. The lead wire gripper is the core part of the IC/LED wire bonding machine, and an electromagnetic micro gripper is generally used. One end of the electromagnetic micro-gripper is a fixed clamping arm, and the other end is driven by a voice coil motor. Its advantages are low control voltage, easy installation and fixed lead-in holes, and its disadvantages are susceptible to electromagnetic interference, complicated assembly, and It is easy to burn the voice coil motor when it is disturbed by external force.

发明内容Contents of the invention

本发明目的在于提供一种引线夹持系统,用于解决现有引线夹持器易受电磁干扰、装配复杂且易烧毁音圈电机的问题。The purpose of the present invention is to provide a lead wire clamping system, which is used to solve the problems that the existing lead wire clamper is susceptible to electromagnetic interference, complex in assembly and easy to burn out the voice coil motor.

为解决上述技术问题,本发明提供一种引线夹持系统,包括压电式微夹持器及压电式驱动系统,所述压电式驱动系统包括微处理器模块、D/A波形产生模块、高压运放模块、功率放大模块、高压自举式电源模块及上电时序控制模块,D/A波形产生模块连接所述微处理器模块及高压运放模块,所述高压自举式电源模块与所述上电时序控制模块、高压运放模块及功率放大模块均相连,所述功率放大模块还与所述高压运放模块及压电式微夹持器相连,所述微处理器模块还与上电时序控制模块相连。In order to solve the above-mentioned technical problems, the present invention provides a lead clamping system, including a piezoelectric micro-gripper and a piezoelectric drive system, the piezoelectric drive system includes a microprocessor module, a D/A waveform generation module, A high-voltage operational amplifier module, a power amplification module, a high-voltage bootstrap power supply module and a power-on sequence control module, a D/A waveform generation module connected to the microprocessor module and a high-voltage operational amplifier module, and the high-voltage bootstrap power supply module and The power-on sequence control module, the high-voltage operational amplifier module and the power amplification module are all connected, the power amplification module is also connected with the high-voltage operational amplifier module and the piezoelectric micro-holder, and the microprocessor module is also connected with the upper The electrical timing control module is connected.

优选地,所述微处理器模块包括微处理器、电源上电指示灯、按键、串行数据总线和JTAG仿真接口。Preferably, the microprocessor module includes a microprocessor, a power-on indicator light, keys, a serial data bus and a JTAG emulation interface.

优选地,所述微处理器模块为DSP微处理器芯片。Preferably, the microprocessor module is a DSP microprocessor chip.

优选地,所述D/A波形产生模块包括地址规划反相器、与或门电路、D/A波形产生电路及IO口外部触发电路。Preferably, the D/A waveform generation module includes an address planning inverter, an AND-OR gate circuit, a D/A waveform generation circuit, and an external trigger circuit for an IO port.

优选地,所述高压运放模块至少包括一个高压运算放大器。Preferably, the high-voltage operational amplifier module includes at least one high-voltage operational amplifier.

优选地,所述功率放大模块包括功率放大芯片、过流保护元件、自举升压功率电路。Preferably, the power amplification module includes a power amplification chip, an overcurrent protection element, and a bootstrap boost power circuit.

优选地,所述自举升压功率电路具有互补级MOSFET组,所述互补级MOSFET组设置于直流电源与电容之间。Preferably, the bootstrap boost power circuit has a complementary MOSFET group, and the complementary MOSFET group is arranged between the DC power supply and the capacitor.

优选地,所述高压自举式电源模块包括变压器、开关管、控制芯片。Preferably, the high-voltage bootstrap power supply module includes a transformer, a switch tube, and a control chip.

优选地,所述上电时序控制模块包括继电器模块及驱动模块。Preferably, the power-on sequence control module includes a relay module and a drive module.

本发明的引线夹持系统包括压电式微夹持器及压电式驱动系统,压电式驱动系统包括微处理器模块、D/A波形产生模块、高压运放模块、功率放大模块、高压自举式电源模块及上电时序控制模块,不易受电磁干扰、装配简单、不易烧毁音圈电机。The lead clamping system of the present invention includes a piezoelectric micro-gripper and a piezoelectric drive system, and the piezoelectric drive system includes a microprocessor module, a D/A waveform generation module, a high-voltage operational amplifier module, a power amplifier module, a high-voltage automatic Lifting power supply module and power-on sequence control module are not susceptible to electromagnetic interference, easy to assemble, and not easy to burn out the voice coil motor.

附图说明Description of drawings

图1是本发明的引线夹持系统的方框示意图;Fig. 1 is the schematic block diagram of lead clamping system of the present invention;

图2是图1中的压电式驱动系统的方框示意图;Fig. 2 is a schematic block diagram of the piezoelectric drive system in Fig. 1;

图3是本发明的引线夹持系统的上电流程示意图;Fig. 3 is a schematic diagram of the power-on process of the lead clamping system of the present invention;

图4是图2中的高压自举式电压模块的自举升压功率电路的电路示意图;Fig. 4 is a schematic circuit diagram of a bootstrap boost power circuit of the high-voltage bootstrap voltage module in Fig. 2;

图5是本发明引入ZV时滞滤波器前后的输出波形对比示意图。Fig. 5 is a schematic diagram of the comparison of output waveforms before and after the ZV time lag filter is introduced in the present invention.

具体实施方式detailed description

为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

请参考图1,本发明提供一种引线夹持系统,包括压电式微夹持器100及压电式驱动系统200。压电式微夹持器100主要是依靠嵌入在柔性铰链部分的压电陶瓷堆材料提供夹持力,压电陶瓷堆材料主要依靠逆压电效应原理工作,根据压电陶瓷正负极之间的电压的大小,压电式微夹持器进行相应尺度的伸缩,压电材料的优点是驱动电压与输出距离呈现线性关系。Please refer to FIG. 1 , the present invention provides a wire clamping system, including a piezoelectric micro-gripper 100 and a piezoelectric driving system 200 . The piezoelectric micro-gripper 100 mainly relies on the piezoelectric ceramic stack material embedded in the flexible hinge to provide clamping force. The piezoelectric ceramic stack material mainly works on the principle of inverse piezoelectric effect. The size of the voltage, the piezoelectric micro-gripper expands and contracts in a corresponding scale, and the advantage of the piezoelectric material is that the driving voltage and the output distance present a linear relationship.

请参考图2,所述压电式驱动系统200包括微处理器模块210、D/A波形产生模块220、高压运放模块230、功率放大模块240、高压自举式电源模块250及上电时序控制模块260。Please refer to FIG. 2, the piezoelectric drive system 200 includes a microprocessor module 210, a D/A waveform generation module 220, a high-voltage operational amplifier module 230, a power amplifier module 240, a high-voltage bootstrap power supply module 250 and a power-on sequence control module 260 .

D/A波形产生模块220连接所述微处理器模块210及高压运放模块230,所述高压自举式电源模块250与所述上电时序控制模块260、高压运放模块230及功率放大模块240均相连,所述功率放大模块240还与所述高压运放模块230及压电式微夹持器100相连,所述微处理器模块210还与上电时序控制模块260相连。The D/A waveform generation module 220 is connected to the microprocessor module 210 and the high-voltage op-amp module 230, the high-voltage bootstrap power supply module 250 and the power-on sequence control module 260, the high-voltage op-amp module 230 and the power amplifier module 240 are connected, the power amplification module 240 is also connected with the high-voltage operational amplifier module 230 and the piezoelectric micro-gripper 100 , and the microprocessor module 210 is also connected with the power-on sequence control module 260 .

微处理器模块210包括微处理器、电源上电指示灯、按键、串行数据总线和JTAG仿真接口。The microprocessor module 210 includes a microprocessor, a power-on indicator light, keys, a serial data bus and a JTAG emulation interface.

微处理器模块采用的DSP微处理器芯片,型号为TMS320F2812PGFA,其具有运算速度高、实时控制性强的优点。该芯片是TI公司在工业控制领域设计的一款成熟的控制芯片,用于控制波形产生芯片DAC和继电器上电时序的控制。嵌入控制算法构成压电式驱动系统的核心,且外部扩展CAN控制总线与串行数据总线芯片,能够实现总线控制和电脑上位机串口通信控制功能。The DSP microprocessor chip used in the microprocessor module is TMS320F2812PGFA, which has the advantages of high computing speed and strong real-time controllability. This chip is a mature control chip designed by TI in the field of industrial control, which is used to control the power-on sequence of the waveform generation chip DAC and relay. The embedded control algorithm constitutes the core of the piezoelectric drive system, and the CAN control bus and serial data bus chip are externally expanded, which can realize the bus control and serial communication control functions of the computer upper computer.

DSP微处理器芯片只需接入30M晶振来提供工作时钟。由于DSP微处理器芯片内部的振荡电路和锁相环,PLL的倍频系数可以由PLLCR寄存器控制,也可由软件实时动态地修改,从而使CPU可工作在150M的工作频率,其时钟周期为6.67ns,可提供较快的工作效率和极高的运算速度。同时可以嵌入定时器功能和外部寄存器接口(XINTF)对数字模拟转换器D/A输入波形进行数据周期写入,同时具备地址和数据外围功能,较容易地能够使外围D/A电路输出稳定波形。省去复杂的CPLD控制外围电路逻辑的规划,降低电路成本,具有较好的易用性。并且具有双路SCI串口通信,能够实现RS232、RS485的通信接口,能够实现工业控制的数据通信接口的兼容性。The DSP microprocessor chip only needs to be connected to a 30M crystal oscillator to provide a working clock. Due to the oscillating circuit and phase-locked loop inside the DSP microprocessor chip, the frequency multiplication coefficient of the PLL can be controlled by the PLLCR register, and can also be dynamically modified by the software in real time, so that the CPU can work at a working frequency of 150M, and its clock cycle is 6.67 ns, can provide faster work efficiency and extremely high computing speed. At the same time, it can embed the timer function and external register interface (XINTF) to write data periodically to the D/A input waveform of the digital-to-analog converter. It also has address and data peripheral functions, which can easily enable the peripheral D/A circuit to output stable waveforms. . It saves the planning of complex CPLD control peripheral circuit logic, reduces circuit cost, and has better usability. And it has two-way SCI serial port communication, which can realize the communication interface of RS232 and RS485, and can realize the compatibility of the data communication interface of industrial control.

D/A波形产生模块220包括地址规划反相器、与或门电路、D/A波形产生电路及IO口外部触发电路。The D/A waveform generation module 220 includes an address planning inverter, an AND-OR gate circuit, a D/A waveform generation circuit and an external trigger circuit for an IO port.

高压运放模块230至少包括一个高压运算放大器。The high-voltage operational amplifier module 230 includes at least one high-voltage operational amplifier.

功率放大模块240包括功率放大芯片、过流保护元件、自举升压功率电路。The power amplifier module 240 includes a power amplifier chip, an overcurrent protection element, and a bootstrap boost power circuit.

高压自举式电源模块250包括变压器、开关管、控制芯片。The high-voltage bootstrap power module 250 includes a transformer, a switch tube, and a control chip.

上电时序控制模块260包括继电器模块及驱动模块。The power-on sequence control module 260 includes a relay module and a driver module.

压电式驱动系统200的元件需要高压220V直流开关电源和控制部分的直流电源,包括12V、-12V、5V、3.3V的控制电路电平。由于整个压电式驱动系统200的各个元件的供电条件和电源精度的需求各不相同,所以需要良好的上电顺序和工作效率。如果上电顺序失误就会造成高压电路对控制部分芯片形成瞬间对地的电势差,容易使控制电路的芯片损坏。The components of the piezoelectric drive system 200 require a high-voltage 220V DC switching power supply and a DC power supply for the control part, including control circuit levels of 12V, -12V, 5V, and 3.3V. Since the power supply conditions and power accuracy requirements of the components of the entire piezoelectric driving system 200 are different, a good power-on sequence and work efficiency are required. If the power-on sequence is wrong, the high-voltage circuit will form an instantaneous potential difference to the ground on the control part of the chip, which will easily damage the chip of the control circuit.

请参考图3,压电式驱动系统200的上电方法包括如下步骤:Please refer to FIG. 3 , the power-on method of the piezoelectric drive system 200 includes the following steps:

步骤S1:系统初始化,压电式驱动系统200上电。Step S1: system initialization, and the piezoelectric drive system 200 is powered on.

步骤S2:给开关电源供电,高压自举式电源模块250工作,开始充电。Step S2: supply power to the switching power supply, the high-voltage bootstrap power module 250 works, and starts charging.

步骤S3:供电3.3V直流电给外围设备。Step S3: Supply 3.3V direct current to the peripheral equipment.

步骤S4:供电1.8V直流电给DSP微处理器芯片。Step S4: supplying 1.8V direct current to the DSP microprocessor chip.

控制电路核心TMS320F2812PGFA芯片的供电为1.8V供电,外围设备的供电电平是3.3V。先供电3.3V给外围设备,再给内核电路供给1.8V电源,中间的间隔时间不能够超过1ms,否则就会对芯片造成芯片工作发热,工作时间过长则对芯片造成寿命缩短,烧坏芯片,The power supply of the control circuit core TMS320F2812PGFA chip is 1.8V, and the power supply level of the peripheral equipment is 3.3V. First supply 3.3V to the peripheral equipment, and then supply 1.8V to the core circuit. The interval between them should not exceed 1ms, otherwise the chip will heat up. If the working time is too long, the life of the chip will be shortened and the chip will be burned. ,

步骤S5:当高压自举式电源模块250充电完成时,如电压达到219V,则发送充电完成信号给DSP微处理器芯片。Step S5: When the high-voltage bootstrap power supply module 250 is fully charged, if the voltage reaches 219V, send a charging completion signal to the DSP microprocessor chip.

步骤S6:DSP微处理器芯片收到充电完成信号后,发出驱动信号。Step S6: After the DSP microprocessor chip receives the charging completion signal, it sends out a driving signal.

步骤S7:控制功率放大模块240、微处理器模块210与上电时序控制模块260的继电器模块隔离。Step S7: Control the isolation of the power amplifier module 240, the microprocessor module 210 and the relay module of the power-on sequence control module 260.

步骤S8:高压运放模块230及功率放大模块240开始工作。Step S8: The high-voltage operational amplifier module 230 and the power amplifier module 240 start working.

步骤S9:驱动压电式微夹持器100。Step S9: Driving the piezoelectric micro-gripper 100 .

如此良好地控制了上电顺序,能够进行良好的上电控制,避免高压电源对控制电路的干扰。Such a good control of the power-on sequence enables good power-on control and avoids the interference of the high-voltage power supply on the control circuit.

请参考图4,为了系统的振动幅度在打开关闭状态同时都能够得到较好的抑制效果,自举升压功率电路采用互补级MOSFET组输出使压电陶瓷和柔性放大功能能够快速响应,能够使压电式微夹持器100快速的打开与关闭。Please refer to Figure 4. In order to better suppress the vibration amplitude of the system when it is on or off, the bootstrap boost power circuit uses a complementary MOSFET group output to enable the piezoelectric ceramics and flexible amplification to respond quickly, enabling The piezoelectric microgripper 100 opens and closes rapidly.

自举升压功率电路包括运算放大器U1、电阻R1-R3、互补级MOSFET组、电容C1及两个相对钳制正负20V电压的二极管D1-D2。The bootstrap boost power circuit includes an operational amplifier U1, resistors R1-R3, a complementary MOSFET group, a capacitor C1 and two diodes D1-D2 that relatively clamp positive and negative 20V voltages.

运算放大器U1的正输入端接入输入电压V-in,负输入端通过电阻R1接地,输出端与二极管D1的阳极相连。二极管D1的阴极与二极管D2的阴极相连,二极管D2的阳极依次通过电阻R3及R2与所述运算放大器U1的负输入端相连。电阻R3与电阻R2之间的交点通过电容C1接地。The positive input terminal of the operational amplifier U1 is connected to the input voltage V-in, the negative input terminal is grounded through the resistor R1, and the output terminal is connected to the anode of the diode D1. The cathode of the diode D1 is connected to the cathode of the diode D2, and the anode of the diode D2 is connected to the negative input terminal of the operational amplifier U1 through the resistors R3 and R2 in turn. The intersection between the resistor R3 and the resistor R2 is grounded through the capacitor C1.

互补级MOSFET组包括一组N沟道的HEXFET MOS管Q1及一组P沟道的HEXFET MOS管Q2。NMOS管Q1的漏极接5V直流电源VDD,源极与所述PMOS管Q2的漏极连接,栅极与所述PMOS管Q2的栅极相连。PMOS管Q2的源极接地。The complementary MOSFET group includes a set of N-channel HEXFET MOS transistors Q1 and a set of P-channel HEXFET MOS transistors Q2. The drain of the NMOS transistor Q1 is connected to the 5V DC power supply VDD, the source is connected to the drain of the PMOS transistor Q2, and the gate is connected to the gate of the PMOS transistor Q2. The source of the PMOS transistor Q2 is grounded.

NMOS管Q1用于增大输出功率;由于压电陶瓷相当于容性负载,PMOS管Q2用于快速放电回路。The NMOS transistor Q1 is used to increase the output power; since the piezoelectric ceramic is equivalent to a capacitive load, the PMOS transistor Q2 is used for a fast discharge circuit.

该电路NMOS管Q1提供的充电电流为I1,提高运算放大器的驱动能力,使压电陶瓷充电时间变快;PMOS管Q2为压电陶瓷提供放电回路,放电电流为I2,使压电陶瓷的充电电荷能够得到快速释放。通过互补级MOSFET组输出使压电陶瓷的充电和放电速度变快,使压电陶瓷和柔性放大机构能够快速相应,使压电式微夹持器100快速的打开与关闭。如此提高了机械的动态响应性,也同时能够为本文输入整形算法的嵌入提供快速时间响应的基础,能够实现功率效果的提升,并且使压电陶瓷的电荷被迅速释放掉。The charging current provided by the NMOS tube Q1 in this circuit is I1, which improves the driving capability of the operational amplifier and makes the charging time of the piezoelectric ceramic faster; the PMOS tube Q2 provides a discharge circuit for the piezoelectric ceramic, and the discharge current is I2, so that the charging of the piezoelectric ceramic The charge can be released quickly. The charging and discharging speed of the piezoelectric ceramic is accelerated through the output of the complementary MOSFET group, so that the piezoelectric ceramic and the flexible amplifying mechanism can respond quickly, so that the piezoelectric micro-holder 100 can be quickly opened and closed. In this way, the dynamic response of the machine is improved, and at the same time, it can provide the basis for fast time response for the embedding of the input shaping algorithm in this paper, which can improve the power effect and make the charge of the piezoelectric ceramic be released quickly.

在电路中添加钳制电压二极管D1-D2使NMOS管Q1和PMOS管Q2可以实现全部导通状态。Adding clamping voltage diodes D1-D2 in the circuit enables the NMOS transistor Q1 and the PMOS transistor Q2 to be fully turned on.

为了使电路稳定性更强,该电路也可以通过多组NMOS管和PMOS管来实现功率的叠加,使输出快速响应性更加提高。In order to make the circuit more stable, the circuit can also realize the superposition of power through multiple sets of NMOS transistors and PMOS transistors, so that the output quick response is further improved.

功率提升与快速放电结构可以通过互补级MOSFET组实现功率的提升与放电效果,电源给压电陶瓷执行器负载提供的瞬态充放电电流可以在并联的情况下实现累加。通过过采用多组并联功率放大电路控制电路可以成倍提高地、峰值输出电流和峰值输出功率,那么驱动电源的输出功率就可以得出:The power boost and fast discharge structure can achieve power boost and discharge effects through complementary MOSFET groups, and the transient charge and discharge currents provided by the power supply to the piezoelectric ceramic actuator load can be accumulated in parallel. The ground, peak output current and peak output power can be doubled by using multiple sets of parallel power amplifier circuit control circuits, then the output power of the drive power supply can be obtained:

W=∫I(t)V(t)dt;W=∫I(t)V(t)dt;

所以加入互补级MOSFET组可以有效地提升电源功率,并且提高充电效率,使电容充电时间大大降低,能够提供更高的电流。加入互补级MOSFET组,功率提升电路能够从充电时间1.96ms提高到250us的响应速度。Therefore, adding a complementary MOSFET group can effectively increase the power of the power supply, and improve the charging efficiency, so that the charging time of the capacitor is greatly reduced, and a higher current can be provided. Adding a complementary MOSFET group, the power boost circuit can increase the response speed from the charging time of 1.96ms to 250us.

请参考图5,现有的微夹持器在峰值120V的20HZ方波驱动时的打开状态下的效果如曲线C-o所示。前端正弦衰减振荡为方波上升沿的震动效果,由于驱动波形上升沿较抖造成其速度振动曲线振幅较大,其在打开过程中一直处于抖动状态,而线夹在关闭状态时,由于其下降沿较抖,所以其关闭状态时冲击响应较大,在关闭时其速度的曲线振幅较大,形成较大的关闭力,造成其工作时,噪音很大,抖动严重,此波形经分析不适合实际打线过程。Please refer to FIG. 5 , the effect of the existing micro gripper in the open state when driven by a 20HZ square wave with a peak value of 120V is shown in curve C-o. The front-end sinusoidal attenuation oscillation is the vibration effect of the rising edge of the square wave. Due to the shaking of the rising edge of the driving waveform, the amplitude of the velocity vibration curve is relatively large. The edge is trembling, so the impact response is relatively large when it is closed, and the amplitude of its speed curve is large when it is closed, forming a large closing force, resulting in a lot of noise and serious jitter when it is working. This waveform is not suitable for analysis. The actual wiring process.

本发明在输出波形的上升沿嵌入ZV时滞滤波器,如此在充电的上升时间能够获得更快的响应速度,并且系统抑制振动效果最好,所以采取在上升沿选用合适的ZV时滞滤波器,而通过在关闭时采用梯形波下降的形式使其整体的波形处于稳定的输出效果。其整形后的输出效果如曲线C-n所示。可知系统的振动幅度在打开关闭状态同时都能够得到较好的抑制效果,使微夹持器振动控制系统振动时间从25ms的时间缩减到700us的时间,大大减低了系统的振动能量,关闭端采用梯形波下降的形式使系统振动能量降低,并且最大振动速度能量减小了90%。减小了为夹持器在开合状态下的残留振动。The present invention embeds a ZV time-lag filter on the rising edge of the output waveform, so that a faster response speed can be obtained at the rising time of charging, and the system has the best vibration suppression effect, so a suitable ZV time-lag filter is selected on the rising edge , and the overall waveform is in a stable output effect by adopting the form of trapezoidal wave drop when it is turned off. The output effect after shaping is shown in the curve C-n. It can be seen that the vibration amplitude of the system can be well suppressed at the same time in the open and closed state, so that the vibration time of the micro gripper vibration control system is reduced from 25ms to 700us, which greatly reduces the vibration energy of the system. The falling form of trapezoidal wave reduces the vibration energy of the system, and the maximum vibration velocity energy is reduced by 90%. Reduced the residual vibration of the gripper in the open and closed state.

本发明引线夹持系统通过采用压电式微夹持器100及压电式驱动系统200,压电式驱动系统200采用微处理器模块210、D/A波形产生模块220、高压运放模块230、功率放大模块240、高压自举式电源模块250及上电时序控制模块260,不易受电磁干扰、装配简单、不易烧毁音圈电机。The lead clamping system of the present invention adopts a piezoelectric micro-gripper 100 and a piezoelectric drive system 200, and the piezoelectric drive system 200 adopts a microprocessor module 210, a D/A waveform generation module 220, a high-voltage op-amp module 230, The power amplification module 240, the high-voltage bootstrap power supply module 250 and the power-on sequence control module 260 are not susceptible to electromagnetic interference, easy to assemble, and difficult to burn out the voice coil motor.

以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.

Claims (9)

1.一种引线夹持系统,包括压电式微夹持器及压电式驱动系统,其特征在于,所述压电式驱动系统包括微处理器模块、D/A波形产生模块、高压运放模块、功率放大模块、高压自举式电源模块及上电时序控制模块,D/A波形产生模块连接所述微处理器模块及高压运放模块,所述高压自举式电源模块与所述上电时序控制模块、高压运放模块及功率放大模块均相连,所述功率放大模块还与所述高压运放模块及压电式微夹持器相连,所述微处理器模块还与上电时序控制模块相连。1. A lead clamping system, comprising a piezoelectric micro-gripper and a piezoelectric drive system, characterized in that the piezoelectric drive system comprises a microprocessor module, a D/A waveform generation module, a high-voltage operational amplifier module, a power amplification module, a high-voltage bootstrap power supply module, and a power-on sequence control module. The D/A waveform generation module is connected to the microprocessor module and the high-voltage op-amp module. The electrical sequence control module, the high-voltage operational amplifier module and the power amplification module are all connected, and the power amplification module is also connected with the high-voltage operational amplifier module and the piezoelectric micro-holder, and the microprocessor module is also connected with the power-on sequence control module. The modules are connected. 2.如权利要求1所述的引线夹持系统,其特征在于,所述微处理器模块包括微处理器、电源上电指示灯、按键、串行数据总线和JTAG仿真接口。2. The wire clamping system according to claim 1, wherein the microprocessor module comprises a microprocessor, a power-on indicator light, buttons, a serial data bus and a JTAG emulation interface. 3.如权利要求2所述的引线夹持系统,其特征在于,所述微处理器模块为DSP微处理器芯片。3. The wire clamping system according to claim 2, wherein the microprocessor module is a DSP microprocessor chip. 4.如权利要求1所述的引线夹持系统,其特征在于,所述D/A波形产生模块包括地址规划反相器、与或门电路、D/A波形产生电路及IO口外部触发电路。4. The wire clamping system according to claim 1, wherein the D/A waveform generation module includes an address planning inverter, an AND-OR gate circuit, a D/A waveform generation circuit and an external trigger circuit of the IO port . 5.如权利要求1所述的引线夹持系统,其特征在于,所述高压运放模块至少包括一个高压运算放大器。5. The lead clamping system according to claim 1, wherein the high-voltage operational amplifier module comprises at least one high-voltage operational amplifier. 6.如权利要求1所述的引线夹持系统,其特征在于,所述功率放大模块包括功率放大芯片、过流保护元件、自举升压功率电路。6. The wire clamping system according to claim 1, wherein the power amplifier module comprises a power amplifier chip, an overcurrent protection element, and a bootstrap boost power circuit. 7.如权利要求6所述的引线夹持系统,其特征在于,所述自举升压功率电路具有互补级MOSFET组,所述互补级MOSFET组设置于直流电源与电容之间。7. The wire clamping system according to claim 6, wherein the bootstrap boost power circuit has a complementary MOSFET group, and the complementary MOSFET group is arranged between the DC power supply and the capacitor. 8.如权利要求1所述的引线夹持系统,其特征在于,所述高压自举式电源模块包括变压器、开关管、控制芯片。8. The wire clamping system according to claim 1, wherein the high-voltage bootstrap power module comprises a transformer, a switching tube, and a control chip. 9.如权利要求1所述的引线夹持系统,其特征在于,所述上电时序控制模块包括继电器模块及驱动模块。9. The wire clamping system according to claim 1, wherein the power-on sequence control module comprises a relay module and a drive module.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101488496A (en) * 2003-05-14 2009-07-22 株式会社瑞萨科技 Semiconductor device and power supply system
CN102931104A (en) * 2012-11-12 2013-02-13 杭州士兰集成电路有限公司 Compact intelligent power driving module and packaging method thereof
CN203339116U (en) * 2013-05-20 2013-12-11 东莞华中科技大学制造工程研究所 Lead Holding Equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101488496A (en) * 2003-05-14 2009-07-22 株式会社瑞萨科技 Semiconductor device and power supply system
CN102931104A (en) * 2012-11-12 2013-02-13 杭州士兰集成电路有限公司 Compact intelligent power driving module and packaging method thereof
CN203339116U (en) * 2013-05-20 2013-12-11 东莞华中科技大学制造工程研究所 Lead Holding Equipment

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