CN104167466A - Surface passivation method for solar energy battery - Google Patents
Surface passivation method for solar energy battery Download PDFInfo
- Publication number
- CN104167466A CN104167466A CN201410295070.4A CN201410295070A CN104167466A CN 104167466 A CN104167466 A CN 104167466A CN 201410295070 A CN201410295070 A CN 201410295070A CN 104167466 A CN104167466 A CN 104167466A
- Authority
- CN
- China
- Prior art keywords
- film layer
- sih
- passivation film
- passivation
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract 8
- 239000007789 gas Substances 0.000 claims abstract 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000012495 reaction gas Substances 0.000 claims abstract 3
- 238000009792 diffusion process Methods 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims 6
- 239000002253 acid Substances 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 19
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 210000002268 wool Anatomy 0.000 description 9
- 239000007888 film coating Substances 0.000 description 8
- 238000009501 film coating Methods 0.000 description 8
- 235000008216 herbs Nutrition 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种太阳能电池的表面钝化方法，在镀膜工序制作减反射膜层时，采用CO2或CO2与SiH4作为反应气体，与太阳能电池硅片表面反应制作钝化膜层，然后在钝化膜层表面再镀一层氮化硅减反膜层；采用CO2作为反应气体时，CO2流量为500～15000sccm，射频功率为4000～8000W，时间为30～300s，钝化膜层的膜厚为5～20nm；采用CO2与SiH4作为反应气体时，CO2与SiH4的流量比例为1～45：1，射频功率为4000～8000W，时间为30～300s，钝化膜层的膜厚为5～20nm；本发明能有效提高太阳能电池的转换效率，节约生产成本，且与传统太阳能电池生产线兼容。
The invention discloses a surface passivation method of a solar cell. When an anti-reflection film layer is produced in a coating process, CO2 or CO2 and SiH4 are used as reaction gases to react with the surface of a silicon wafer of a solar cell to form a passivation film layer. Then coat a layer of silicon nitride anti-reflection film on the surface of the passivation film; when CO 2 is used as the reaction gas, the CO 2 flow rate is 500-15000 sccm, the radio frequency power is 4000-8000W, and the time is 30-300s. The thickness of the film layer is 5-20nm; when CO 2 and SiH 4 are used as reaction gases, the flow ratio of CO 2 and SiH 4 is 1-45:1, the radio frequency power is 4000-8000W, and the time is 30-300s. The film thickness of the chemical film layer is 5-20nm; the invention can effectively improve the conversion efficiency of the solar cell, save the production cost, and is compatible with the traditional solar cell production line.
Description
Technical field
The present invention relates to a kind of method for manufacturing solar battery, be specifically related to a kind of surface passivation method of solar cell.
Background technology
At present, along with solar battery sheet production technology is constantly progressive, production cost constantly reduces, and conversion efficiency improves constantly, and makes the day by day universal also fast development of application of photovoltaic generation, becomes gradually the important sources of supply of electric power.Solar battery sheet is a kind of photoelectric cell of power conversion, and it can become electric energy the power conversion of light under the irradiation of sunlight, thereby realizes photovoltaic generation.Produce the technique more complicated of cell piece, generally will pass through the key steps such as silicon chip detection, surface wool manufacturing, diffusion system knot, dephosphorization silex glass, plasma etching, coated with antireflection film, silk screen printing, Fast Sintering and detection packing.The reflectivity of the silicon chip surface before coated with antireflection film is 25%, in order to reduce surface reflection, improves the conversion efficiency of battery, need to deposit one deck silicon nitride anti-reflecting film.In industrial production, the normal PECVD equipment that adopts is prepared antireflective coating now.PECVD is plasma enhanced chemical vapor deposition.Its know-why is to utilize low temperature plasma to make energy source, and sample is placed on the negative electrode of glow discharge under low pressure, utilizes glow discharge to make sample be warmed up to predetermined temperature, then passes into appropriate reacting gas SiH
4and NH
3, gas is through series of chemical and plasma reaction, and at sample surfaces, forming solid film is silicon nitride film.Generally, use the film thickness of method deposition of this plasma enhanced chemical vapor deposition in 80nm left and right.The film of thickness has the functional of optics like this.Utilize film interference principle, can make reflection of light greatly reduce, the short circuit current of battery and output are just increased considerably, and efficiency also has suitable raising.How further to improve battery conversion efficiency, reduce costs and become present important topic.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of surface passivation method of solar cell, can effectively improve the conversion efficiency of solar cell, save production cost, and compatible with conventional solar cell production line, be suitable for large-scale production.
The technical scheme that technical solution problem of the present invention adopts is: a kind of surface passivation method of solar cell, is characterized in that: when filming process is made antireflection film layer, adopt CO
2or CO
2with SiH
4as reacting gas, make passivation film with silicon chip of solar cell surface reaction, then on passivation film surface, plate again one deck silicon nitride anti-reflection film layer;
Adopt CO
2concrete steps during as reacting gas are as follows:
(1) P type polysilicon chip is completed to the diffusion of sour making herbs into wool, phosphorus, etching matting is placed in film coating equipment;
(2) in filming equipment, pass into reacting gas CO
2, at silicon chip surface, generate one deck passivation film, described CO
2flow is 500～15000sccm, and radio-frequency power is 4000～8000W, and the time is 30～300s, and the thickness of described passivation film is 5～20nm, and refractive index is 2.0～2.1;
(3), after passivation film completes, in filming equipment, pass into reacting gas NH
3and SiH
4, at the uniform silicon nitride film layer of passivation film surface deposition one deck, described NH
3with SiH
4flow proportional be 1～45:1, the thickness of described silicon nitride anti-reflection film layer is 10～100nm, refractive index is 1.8～2.5;
Adopt CO
2with SiH
4concrete steps during as reacting gas are as follows:
(1) P type polysilicon chip is completed to the diffusion of sour making herbs into wool, phosphorus, etching matting is placed in film coating equipment;
(2) in filming equipment, pass into reacting gas CO
2with SiH
4, at silicon chip surface, generate one deck passivation film, described CO
2with SiH
4flow be that ratio is 1～45:1, radio-frequency power is 4000～8000W, the time is 30～300s, the thickness of described passivation film is 5～20nm, refractive index is 2.0～2.1;
(3), after passivation film completes, in filming equipment, pass into reacting gas NH
3and SiH
4, at the uniform silicon nitride film layer of passivation film surface deposition one deck, described NH
3with SiH
4flow proportional be 1～45:1, the thickness of described silicon nitride anti-reflection film layer is 10～100nm, refractive index is 1.8～2.5.
The invention has the beneficial effects as follows: the present invention is by the gas formulation of optimal design plated film and the rete form of plated film, make solar battery efficiency have the lifting of 0.1% left and right, save production cost, and compatible with conventional solar cell production line, be suitable for large-scale production.
Accompanying drawing explanation
Fig. 1 is structural representation after the passivation of embodiment of the present invention solar cell surface.
Below in conjunction with accompanying drawing, the present invention will be further described.
Embodiment
A surface passivation method for solar cell, when filming process is made antireflection film layer, adopts CO
2or CO
2with SiH
4as reacting gas, make passivation film 2 with silicon chip of solar cell 1 surface reaction, then on passivation film 2 surfaces, plate again one deck silicon nitride anti-reflection film layer 3(as shown in Figure 1).
Embodiment 1: a kind of surface passivation method of solar cell, adopts CO
2concrete steps during as reacting gas are as follows:
(1) P type polysilicon chip 1 is completed to the diffusion of sour making herbs into wool, phosphorus, etching matting is placed in film coating equipment;
(2) in filming equipment, pass into reacting gas CO
2, at silicon chip 1 Surface Creation one deck passivation film 2, described CO
2flow is 2000sccm, and radio-frequency power is 5000W, and the time is 250s, and the thickness of passivation film is 10nm, and refractive index is 2.03;
(3) after passivation film 2 completes, in filming equipment, pass into reacting gas NH
3and SiH
4, at the uniform silicon nitride film layer of passivation film 2 surface deposition one deck, described NH
3flow be 7000sccm, SiH
4flow be that the thickness of silicon nitride anti-reflection film layer is 80nm described in 680sccm, refractive index is 2.06.
Embodiment 2: the surface passivation method of another kind of solar cell, adopts CO
2with SiH
4concrete steps during as reacting gas are as follows:
(1) P type polysilicon chip 1 is completed to the diffusion of sour making herbs into wool, phosphorus, etching matting is placed in film coating equipment;
(2) in filming equipment, pass into reacting gas CO
2with SiH
4, at silicon chip 1 Surface Creation one deck passivation film 2, described CO
2with SiH
4flow be that ratio is 20:1, radio-frequency power is 5500W, the time is 120s, the thickness of passivation film is 8nm, refractive index is 2.05;
(3) after passivation film 2 completes, in filming equipment, pass into reacting gas NH
3and SiH
4, at the uniform silicon nitride film layer of passivation film 2 surface deposition one deck, described NH
3flow be 6800sccm, SiH
4flow be that the thickness of silicon nitride anti-reflection film layer is 83nm described in 720sccm, refractive index is 2.08.
Embodiment 3: the surface passivation method of the third solar cell, adopts CO
2concrete steps during as reacting gas are as follows:
(1) P type polysilicon chip 1 is completed to the diffusion of sour making herbs into wool, phosphorus, etching matting is placed in film coating equipment;
(2) in filming equipment, pass into reacting gas CO
2, at silicon chip 1 Surface Creation one deck passivation film 2, described CO
2flow is 500sccm, and radio-frequency power is 4000W, and the time is 30s, and the thickness of passivation film is 5nm, and refractive index is 2.0;
(3) after passivation film 2 completes, in filming equipment, pass into reacting gas NH
3and SiH
4, at the uniform silicon nitride film layer of passivation film 2 surface deposition one deck, described NH
3flow be 7000sccm, SiH
4flow be that the thickness of silicon nitride anti-reflection film layer is 70nm described in 680sccm, refractive index is 2.0.
The surface passivation method of 4: the four kinds of solar cells of embodiment, adopts CO
2with SiH
4concrete steps during as reacting gas are as follows:
(1) P type polysilicon chip 1 is completed to the diffusion of sour making herbs into wool, phosphorus, etching matting is placed in film coating equipment;
(2) in filming equipment, pass into reacting gas CO
2with SiH
4, at silicon chip 1 Surface Creation one deck passivation film 2, described CO
2with SiH
4flow be that ratio is 10:1, radio-frequency power is 8000W, the time is 300s, the thickness of passivation film is 5nm, refractive index is 2.0;
(3) after passivation film 2 completes, in filming equipment, pass into reacting gas NH
3and SiH
4, at the uniform silicon nitride film layer of passivation film 2 surface deposition one deck, described NH
3flow be 6800sccm, SiH
4flow be that the thickness of silicon nitride anti-reflection film layer is 75nm described in 720sccm, refractive index is 2.1.
The surface passivation method of 5: the five kinds of solar cells of embodiment, adopts CO
2concrete steps during as reacting gas are as follows:
(1) P type polysilicon chip 1 is completed to the diffusion of sour making herbs into wool, phosphorus, etching matting is placed in film coating equipment;
(2) in filming equipment, pass into reacting gas CO
2, at silicon chip 1 Surface Creation one deck passivation film 2, described CO
2flow is 15000sccm, and radio-frequency power is 8000W, and the time is 300s, and the thickness of passivation film is 20nm, and refractive index is 2.1;
(3) after passivation film 2 completes, in filming equipment, pass into reacting gas NH
3and SiH
4, at the uniform silicon nitride film layer of passivation film 2 surface deposition one deck, described NH
3flow be 9000sccm, SiH
4flow be that the thickness of silicon nitride anti-reflection film layer is 100nm described in 880sccm, refractive index is 2.5.
The surface passivation method of 6: the six kinds of solar cells of embodiment, adopts CO
2with SiH
4concrete steps during as reacting gas are as follows:
(1) P type polysilicon chip 1 is completed to the diffusion of sour making herbs into wool, phosphorus, etching matting is placed in film coating equipment;
(2) in filming equipment, pass into reacting gas CO
2with SiH
4, at silicon chip 1 Surface Creation one deck passivation film 2, described CO
2with SiH
4flow be that ratio is 45:1, radio-frequency power is 8000W, the time is 300s, the thickness of passivation film is 20nm, refractive index is 2.1;
(3) after passivation film 2 completes, in filming equipment, pass into reacting gas NH
3and SiH
4, at the uniform silicon nitride film layer of passivation film 2 surface deposition one deck, described NH
3flow be 8800 sccm, SiH
4flow be that the thickness of silicon nitride anti-reflection film layer is 100nm described in 920sccm, refractive index is 2.5.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410295070.4A CN104167466A (en) | 2014-06-27 | 2014-06-27 | Surface passivation method for solar energy battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410295070.4A CN104167466A (en) | 2014-06-27 | 2014-06-27 | Surface passivation method for solar energy battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104167466A true CN104167466A (en) | 2014-11-26 |
Family
ID=51911204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410295070.4A Pending CN104167466A (en) | 2014-06-27 | 2014-06-27 | Surface passivation method for solar energy battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104167466A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112201727A (en) * | 2020-09-28 | 2021-01-08 | 浙江晶科能源有限公司 | Manufacturing method of photovoltaic device |
| CN113937192A (en) * | 2021-07-30 | 2022-01-14 | 国家电投集团科学技术研究院有限公司 | Preparation method of amorphous silicon passivation layer of silicon heterojunction solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120145185A1 (en) * | 2009-08-24 | 2012-06-14 | Centre National De La Recherche Scientifique | Method for cleaning the surface of a silicon substrate |
| CN102931284A (en) * | 2012-11-14 | 2013-02-13 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Method for preparing SiOx-SiNx laminated films of crystal silicon solar cell |
| CN103094366A (en) * | 2013-01-25 | 2013-05-08 | 中山大学 | Solar cell passivation antireflection film and preparation technology and method thereof |
-
2014
- 2014-06-27 CN CN201410295070.4A patent/CN104167466A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120145185A1 (en) * | 2009-08-24 | 2012-06-14 | Centre National De La Recherche Scientifique | Method for cleaning the surface of a silicon substrate |
| CN102931284A (en) * | 2012-11-14 | 2013-02-13 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Method for preparing SiOx-SiNx laminated films of crystal silicon solar cell |
| CN103094366A (en) * | 2013-01-25 | 2013-05-08 | 中山大学 | Solar cell passivation antireflection film and preparation technology and method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112201727A (en) * | 2020-09-28 | 2021-01-08 | 浙江晶科能源有限公司 | Manufacturing method of photovoltaic device |
| CN113937192A (en) * | 2021-07-30 | 2022-01-14 | 国家电投集团科学技术研究院有限公司 | Preparation method of amorphous silicon passivation layer of silicon heterojunction solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110459615B (en) | A composite dielectric passivation layer structure solar cell and its preparation process | |
| CN102903764A (en) | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof | |
| CN102403399A (en) | Fabrication method and structure of a multi-purpose masked textured solar cell | |
| CN102185012A (en) | Method for plating silicon nitride anti-reflecting film | |
| CN108365023A (en) | Coating process for the black silicon face passivation of polycrystalline | |
| CN105633180B (en) | The method of Graphene auxiliary silicon slice wet-method etching | |
| CN102199760A (en) | Preparation method for double-layer silicon nitride anti-reflection film | |
| CN106711280A (en) | Method of making N-type double-sided battery | |
| CN108074999A (en) | A kind of black silion cell of selective emitter and preparation method thereof | |
| CN105576081A (en) | Manufacturing method for black silicon double-face cell | |
| CN102005508A (en) | Method for continuously preparing crystalline silicon solar cell PN (Positive-Negative) junction and antireflection film | |
| CN104851923A (en) | Antireflection film manufacture method for raising efficiency of crystalline silicon solar cell | |
| CN104659150A (en) | Preparation method of crystalline silicon solar battery multi-layer antireflection film | |
| CN102130212B (en) | A method of manufacturing a solar cell | |
| CN106328736B (en) | A kind of anti-LID black silicon solars high-efficiency battery and its production method | |
| CN104167466A (en) | Surface passivation method for solar energy battery | |
| CN112768534A (en) | Silicon oxide passivated PERC double-sided battery and preparation method thereof | |
| CN204144271U (en) | A kind of monocrystaline silicon solar cell with passivation structure on back | |
| CN103746006A (en) | Passivating layer of crystalline silicon solar cell and passivating process thereof | |
| CN103035777A (en) | Preparation method of three-layer SiN antireflective coatings of improved polycrystalline silicon solar cell | |
| CN203312325U (en) | Coating crystalline-silicon battery piece with resistance to PID effect | |
| CN111477719A (en) | A kind of manufacturing method of full suede N-type double-sided battery | |
| CN110752270A (en) | Solar cell, gaseous ozone applying device, and preparation method of solar cell | |
| CN117038799A (en) | BC battery preparation method and BC battery | |
| CN204885179U (en) | A high-efficiency solar cell with anti-LID black silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141126 |