CN104142259A - Making method of solar monocrystalline silicon test wafer - Google Patents
Making method of solar monocrystalline silicon test wafer Download PDFInfo
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- CN104142259A CN104142259A CN201310172269.3A CN201310172269A CN104142259A CN 104142259 A CN104142259 A CN 104142259A CN 201310172269 A CN201310172269 A CN 201310172269A CN 104142259 A CN104142259 A CN 104142259A
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- Prior art keywords
- polishing
- monocrystalline silicon
- solar monocrystalline
- making
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- 238000012360 testing method Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 20
- 238000005070 sampling Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 6
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000003912 environmental pollution Methods 0.000 abstract description 4
- 239000011259 mixed solution Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 abstract 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 239000002253 acid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000208125 Nicotiana Species 0.000 description 1
- 235000002637 Nicotiana tabacum Nutrition 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Sampling And Sample Adjustment (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a making method of a solar monocrystalline silicon test wafer. The method comprises the following steps: 1, sampling: cutting each of the head and the tail of a monocrystalline silicon rod to obtain a sample wafer with the thickness of 1-5mm; 2, physical polishing: physically grinding and polishing a prescribed position on the surface of each of the above obtained sample wafers by using a polishing wheel until the surface of each of the sample wafers has no obvious knife marks and forms a minute surface; and 3, testing: selecting a first test point in the center of each of the polished sample wafers, and testing. The method has the following advantages: 1, the adoption of physical polishing reduces the environmental pollution caused in the production process, saves labor and time, and improves the work efficiency; and 2, the sample wafer polishing is carried out without using a hydrofluoric acid and nitric acid mixed solution, so the production cost is reduced, and the economic benefit of an enterprise is increased.
Description
Technical field
The present invention relates to a kind of solar monocrystalline silicon field tests, be specifically related to a kind of method for making of solar monocrystalline silicon test sample.
Background technology
At present, in the manufacturing process of solar monocrystalline silicon test sample, block workshop and intercept after print, grind with emery, remove tool marks, and adjust uniformity coefficient, and make the thickness difference of print measuring point as much as possible little, ground print is cleaned up, put into hydrofluorite and nitric acid mixed solution carries out polishing, the proportioning of hydrofluorite and nitric acid is 1:(3 ~ 5), after polishing, then use a large amount of deionized water rinsings clean.On the one hand, because nitric acid and hydrofluorite all belong to strong acid, the tobacco in use procedure has caused atmospheric pollution, and the spent acid after use need to carry out neutralisation treatment, deals with improperly and can cause environmental pollution; On the other hand, nitric acid is 6.70 yuan/kg, and hydrofluorite is 11.70 yuan/kg, and pure water is 0.20 yuan/kg, does not take containing sewage disposal expense, vent gas treatment, and cost is higher; In addition, silicon single crystal rod is taken to Pickling-shop from blocking workshop by print, then carry out polishing at Pickling-shop, minimum needs 1 ~ 2 people, labor intensive and man-hour, inefficiency.
Summary of the invention
The present invention is directed to problems of the prior art, a kind of method for making of solar monocrystalline silicon test sample is provided, environmental pollution that the method adopts physics polishing to reduce to cause in production run, reduce production cost, save manpower and time, increase work efficiency.
The present invention is achieved by the following technical solutions: a kind of method for making of solar monocrystalline silicon test sample, is characterized in that comprising the following steps:
1. sampling: respectively cut out the print that thickness is 1 ~ 5mm at silicon single crystal rod head and afterbody;
2. physics polishing: on the position of print surface regulation, carry out physics sanding and polishing with rag wheel, until print surface becomes minute surface without obvious tool marks;
3. test: the print center after polishing is chosen the first test point and tested.
Described step 1. middle print thickness is 2 ~ 4mm
The described step 2. impeller of middle rag wheel is annular, its overall diameter: be 90 ~ 120 mm, interior diameter is 65 ~ 95 mm, and thickness is 8 ~ 13mm.
Also comprise step 4., step is 4. as follows: choosing the second test point apart from 5 ~ 7mm place, print edge, the second test point is to arrange radially centered by the center of circle.
Described the second test point is 3 ~ 7.
The present invention has the following advantages:
1. the method adopts physics polishing to reduce to cause in production run environmental pollution, save manpower and time, increase work efficiency;
2. do not use hydrofluorite and nitric acid mixed solution to carry out polishing print, reduce production cost, increase Business Economic Benefit.
Embodiment
A method for making for solar monocrystalline silicon test sample, comprises the following steps:
1. sampling: respectively cut out the print that thickness is 1 ~ 5mm at silicon single crystal rod head and afterbody;
2. physics polishing: on the position of print surface regulation, carry out physics sanding and polishing with rag wheel, until print surface becomes minute surface without obvious tool marks;
3. test: the print center after polishing is chosen the first test point and tested.
The step 2. impeller of middle rag wheel is annular, its overall diameter: be 90 ~ 120 mm, interior diameter is 65 ~ 95 mm, and thickness is 8 ~ 13mm.
As preferred version of the present invention: step 1. in print thickness be 3mm, the step 2. overall diameter of middle rag wheel annular impeller is 105 mm, interior diameter is 80 mm, thickness is 11mm, choosing 4 the second test points apart from 6mm place, print edge, the second test point is to arrange radially centered by the center of circle.
Claims (5)
1. a method for making for solar monocrystalline silicon test sample, is characterized in that comprising the following steps:
1. sampling: respectively cut out the print that thickness is 1 ~ 5mm at silicon single crystal rod head and afterbody;
2. physics polishing: on the position of print surface regulation, carry out physics sanding and polishing with rag wheel, until print surface becomes minute surface without obvious tool marks;
3. test: the print center after polishing is chosen the first test point and tested.
2. the method for making of solar monocrystalline silicon test sample according to claim 1, is characterized in that: described step 1. middle print thickness is 2 ~ 4mm.
3. the method for making of solar monocrystalline silicon test sample according to claim 1, is characterized in that: the described step 2. impeller of middle rag wheel is annular, its overall diameter: be 90 ~ 120 mm, interior diameter is 65 ~ 95 mm, and thickness is 8 ~ 13mm.
4. the method for making of solar monocrystalline silicon test sample according to claim 1, it is characterized in that: also comprise that step 4., step is 4. as follows: choosing the second test point apart from 5 ~ 7mm place, print edge, the second test point is to arrange radially centered by the center of circle.
5. according to the method for making of the solar monocrystalline silicon test sample described in claim 1 ~ 4, it is characterized in that: described the second test point is 3 ~ 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310172269.3A CN104142259A (en) | 2013-05-10 | 2013-05-10 | Making method of solar monocrystalline silicon test wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310172269.3A CN104142259A (en) | 2013-05-10 | 2013-05-10 | Making method of solar monocrystalline silicon test wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104142259A true CN104142259A (en) | 2014-11-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310172269.3A Pending CN104142259A (en) | 2013-05-10 | 2013-05-10 | Making method of solar monocrystalline silicon test wafer |
Country Status (1)
| Country | Link |
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| CN (1) | CN104142259A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110998787A (en) * | 2017-07-26 | 2020-04-10 | 硅电子股份公司 | Epitaxially coated semiconductor wafer made of monocrystalline silicon and method for the production thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1392823A (en) * | 2000-09-13 | 2003-01-22 | 联合材料公司 | Ultra abrasive grain wheel for mirror finish |
| CN1650404A (en) * | 2002-04-30 | 2005-08-03 | 信越半导体株式会社 | Semiconductor wafer manufacturing method and wafer |
-
2013
- 2013-05-10 CN CN201310172269.3A patent/CN104142259A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1392823A (en) * | 2000-09-13 | 2003-01-22 | 联合材料公司 | Ultra abrasive grain wheel for mirror finish |
| CN1650404A (en) * | 2002-04-30 | 2005-08-03 | 信越半导体株式会社 | Semiconductor wafer manufacturing method and wafer |
Non-Patent Citations (3)
| Title |
|---|
| 郭东明等: "大尺寸硅片的高效超精密加工技术", 《世界制造技术与装备市场》 * |
| 陈明君等: "单晶硅脆性材料塑性域超精密磨削加工的研究", 《航空精密制造技术》 * |
| 陈杰等: "大尺寸集成电路和硅片表面加工技术", 《现代制造工程》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110998787A (en) * | 2017-07-26 | 2020-04-10 | 硅电子股份公司 | Epitaxially coated semiconductor wafer made of monocrystalline silicon and method for the production thereof |
| CN110998787B (en) * | 2017-07-26 | 2023-11-03 | 硅电子股份公司 | Epitaxial coated semiconductor wafer made of monocrystalline silicon and method for producing the same |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141112 |