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CN104131308A - Preparation method for bismuth tungstate - Google Patents

Preparation method for bismuth tungstate Download PDF

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CN104131308A
CN104131308A CN201410357061.3A CN201410357061A CN104131308A CN 104131308 A CN104131308 A CN 104131308A CN 201410357061 A CN201410357061 A CN 201410357061A CN 104131308 A CN104131308 A CN 104131308A
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bismuth
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electrolytic solution
electrolyte
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宋祖伟
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Qingdao Agricultural University
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Abstract

本发明公开了钨酸铋的制备方法,通过电化学过程完成钨酸铋的生产,具体包括下述步骤:1)铋材作为阳极、铂片作为阴极,插入到钨源电解液中;2)电解液通电至铋材表面持续有电火花,维持通电至少30s,电流强度至少为0.01A,将电解液中的沉淀或带有沉积层的铋材洗涤、干燥,即得钨酸铋粉末或薄膜。本发明公开的制备方法工艺简单,成本低,环境友好,并且能够有效控制产物的相组成。The invention discloses a preparation method of bismuth tungstate. The production of bismuth tungstate is completed through an electrochemical process, which specifically includes the following steps: 1) bismuth material is used as an anode, and a platinum sheet is used as a cathode, which is inserted into a tungsten source electrolyte; 2) The electrolyte is energized until there is a continuous electric spark on the surface of the bismuth material, and the energization is maintained for at least 30s, and the current intensity is at least 0.01A. The precipitation in the electrolyte or the bismuth material with a deposited layer is washed and dried to obtain bismuth tungstate powder or film . The preparation method disclosed by the invention has the advantages of simple process, low cost, environmental friendliness, and can effectively control the phase composition of the product.

Description

钨酸铋的制备方法The preparation method of bismuth tungstate

技术领域technical field

本发明涉及钨酸铋的制备方法,属于无机非金属材料领域。The invention relates to a preparation method of bismuth tungstate, belonging to the field of inorganic non-metallic materials.

背景技术Background technique

钨酸铋是一类环境友好型功能材料,主要有Bi2WO6、Bi3.84W0.16O6.24、Bi14W2O27等品相,属于宽带半导体(带隙能小于TiO2),具有优良的光电、荧光以及压电性质,其粉体或薄膜材料在光电领域尤其是光催化材料领域应用前景广阔。Bismuth tungstate is a kind of environment-friendly functional material, mainly including Bi 2 WO 6 , Bi 3.84 W 0.16 O 6.24 , Bi 14 W 2 O 27 and other phases . Its photoelectric, fluorescent and piezoelectric properties, its powder or thin film materials have broad application prospects in the field of optoelectronics, especially photocatalytic materials.

目前,钨酸铋的制备方法,主要包括如下几种:At present, the preparation methods of bismuth tungstate mainly include the following types:

1、固相合成法,用于钨酸铋粉体的制备,需要复杂的合成过程,整个过程合成温度高,能耗大,目前已经不再普遍应用。1. The solid-phase synthesis method, which is used for the preparation of bismuth tungstate powder, requires a complicated synthesis process. The synthesis temperature of the whole process is high and the energy consumption is large, so it is no longer commonly used.

2、水热/溶剂热合成法,用于钨酸铋粉体的制备,尚无法用于制备薄膜。相对于传统的固相合成法,降低了合成温度(80~230℃),但是合成时间较长,需要高温退火处理,近20小时才能完成制备过程,制备效率很低。2. The hydrothermal/solvothermal synthesis method is used for the preparation of bismuth tungstate powder, but it cannot be used for the preparation of thin films. Compared with the traditional solid-phase synthesis method, the synthesis temperature (80-230°C) is lowered, but the synthesis time is longer, requiring high-temperature annealing treatment, and the preparation process can be completed in nearly 20 hours, and the preparation efficiency is very low.

3、对于钨酸铋薄膜的制备,主要以溶胶-凝胶法(sol-gel)、金属有机物分解法(MOD)、化学溶液分解法(CSD)为主。这些方法薄膜过程复杂,包括前躯体溶液的配制、旋涂法制膜、退火处理等步骤,需要使用旋涂机、马弗炉等专用设备,增加了生产成本;制备过程中还涉及到大量有机试剂的使用与去除,制备过程繁琐,并且中间产物如果不加以处理会对环境带来不利影响,不利于推广应用。在上述工艺中,影响因素有制备原料、前躯体溶液浓度、匀胶速度、退火条件(400~600℃)等多种,同时还涉及大量有机物的使用与去除,导致制备过程复杂化,无法有效控制产物的质量。3. For the preparation of bismuth tungstate thin films, sol-gel method (sol-gel), metal-organic decomposition method (MOD) and chemical solution decomposition method (CSD) are mainly used. The thin film process of these methods is complex, including steps such as the preparation of the precursor solution, spin coating method membrane, annealing treatment, need to use special equipment such as spin coater, muffle furnace, increased production cost; also involve a large amount of organic reagents in the preparation process The use and removal of the preparation process is cumbersome, and if the intermediate product is not treated, it will have an adverse impact on the environment, which is not conducive to popularization and application. In the above process, there are various influencing factors such as raw material preparation, precursor solution concentration, homogenization speed, annealing condition (400-600°C), etc., and it also involves the use and removal of a large amount of organic matter, which complicates the preparation process and cannot be effectively Control the quality of the product.

因此,现有技术中尚不存在一种可同时用于钨酸铋粉体和薄膜的制备工艺,更关键的现有技术中尚不存在制备效率高、工艺过程条件平和的制备工艺。Therefore, there is no preparation process that can be used for bismuth tungstate powder and film at the same time in the prior art, and more critically, there is no preparation process with high preparation efficiency and mild process conditions in the prior art.

发明内容Contents of the invention

针对现有技术的缺陷,本发明公开了一种钨酸铋的制备方法,基于电化学过程,通过阳极火花放电技术来实现粉体或薄膜的制备,具有合成温度低、反应时间短、合成工艺简单、产物的相组成可控等优势。Aiming at the defects of the prior art, the present invention discloses a preparation method of bismuth tungstate. Based on the electrochemical process, the preparation of powder or film is realized through the anode spark discharge technology, which has the advantages of low synthesis temperature, short reaction time, and synthesis process Simple, controllable phase composition of the product and other advantages.

为实现上述目的,本发明是通过下述技术方案实现的:To achieve the above object, the present invention is achieved through the following technical solutions:

钨酸铋的制备方法,包括下述步骤:1)铋材作为阳极、铂片作为阴极,插入到钨源电解液中;2)钨源电解液通电至铋材表面持续有电火花,维持通电至少30s,电流强度至少为0.01A,将电解液中的沉淀或带有沉积层的铋材洗涤、干燥,即得钨酸铋粉体或薄膜。The preparation method of bismuth tungstate comprises the following steps: 1) the bismuth material is used as the anode, and the platinum sheet is used as the cathode, and inserted into the tungsten source electrolyte; At least 30s, the current intensity is at least 0.01A, wash and dry the precipitate in the electrolyte or the bismuth material with the deposited layer, and then obtain the bismuth tungstate powder or film.

通过上述工艺,通常在通电5~10分钟内即可完成钨酸铋的制备,同时上述工艺可同时用于制备钨酸铋粉体和薄膜,整个制备过程条件平缓,在常温常压下即可进行。Through the above-mentioned process, the preparation of bismuth tungstate is usually completed within 5 to 10 minutes of electrification. At the same time, the above-mentioned process can be used to prepare bismuth tungstate powder and film at the same time. conduct.

其中,上述所用电极的大小是电化学领域的常见规格,一般是8cm×4cm×0.1cm,其它的大小,根据工业生产的规模,也是可以合理调整的。Wherein, the size of the electrodes used above is a common specification in the field of electrochemistry, generally 8 cm×4 cm×0.1 cm, and other sizes can also be reasonably adjusted according to the scale of industrial production.

其中,电流强度可根据需要进行调整,在实际工业生产中,通常是0.5A乃至更大的电流,但是电流强度受制于电源类型的限制。Among them, the current intensity can be adjusted according to needs, and in actual industrial production, it is usually 0.5A or even greater current, but the current intensity is limited by the type of power supply.

其中,为了防止杂质,可预先对阳极、阴极进行清洁,例如用不同目数的砂纸依次打磨铋材,抛光膏抛光后(对异型铋材,采用化学或电解处理其表面),依次用丙酮、乙醇清洗除油等即可;除此之外,简单的采用有机溶剂清洗也可。具体是否需要进行预处理取决于所用电极的情况。Among them, in order to prevent impurities, the anode and the cathode can be cleaned in advance, such as grinding the bismuth material sequentially with sandpaper of different meshes. Cleaning with ethanol to remove oil, etc.; in addition, simple cleaning with organic solvents is also acceptable. The need for pretreatment depends on the electrode used.

其中,用于容纳电解液的电解池可采用电化学领域任意可用的电解池,例如双层玻璃型电解池。Wherein, the electrolytic cell used to accommodate the electrolyte can be any available electrolytic cell in the field of electrochemistry, such as a double-layer glass type electrolytic cell.

在本发明中,步骤1)所用铋材为单质铋或铋-钨合金或其它含有铋元素的合金材料;所用钨源电解液是将钨源加入到水中,所用钨源为钨酸钠、钨酸铵或钨酸。In the present invention, the bismuth material used in step 1) is elemental bismuth or bismuth-tungsten alloy or other alloy materials containing bismuth elements; the tungsten source electrolyte used is that the tungsten source is added to water, and the tungsten source used is sodium tungstate, tungsten Ammonium Oxide or Tungstic Acid.

为了保证电解液具有一定的酸碱度,还包括向钨源电解液加入无机碱溶液调整酸碱性的步骤,调整至钨酸根浓度为0.01~0.80mol/L、OH-浓度为0.1~2.0mol/L。In order to ensure that the electrolyte has a certain pH, it also includes the step of adding an inorganic alkali solution to the tungsten source electrolyte to adjust the acidity and alkalinity, adjusting the concentration of tungstate to 0.01-0.80mol/L, and the concentration of OH - to 0.1-2.0mol/L .

其中,上述的无机碱包括但不限于氢氧化钠、氢氧化钾等。Wherein, the above-mentioned inorganic bases include but not limited to sodium hydroxide, potassium hydroxide and the like.

为了调节钨酸铋的组成,还包括向钨源电解液加入小分子有机醇(包括但不限于甲醇、乙醇、乙二醇、丙醇等)调节电解液的介电常数的步骤,通常是将介电常数调整到52.4~74.8。In order to adjust the composition of bismuth tungstate, it also includes the step of adding small molecule organic alcohol (including but not limited to methanol, ethanol, ethylene glycol, propanol, etc.) to the tungsten source electrolyte to adjust the dielectric constant of the electrolyte, usually The dielectric constant is adjusted to 52.4~74.8.

在本发明中,阳极与阴极之间的距离为0.5~5cm,浸入电解液的深度为1~6cm;优选的,阳极与阴极之间的距离为1~3cm,浸入电解液的深度为2~4cm。In the present invention, the distance between the anode and the cathode is 0.5-5 cm, and the depth of immersion in the electrolyte is 1-6 cm; preferably, the distance between the anode and the cathode is 1-3 cm, and the depth of immersion in the electrolyte is 2-6 cm. 4cm.

为了加快反应速度,并获得粉体,步骤2)还包括在通电过程中对钨源电解液进行搅拌或超声的步骤。In order to speed up the reaction speed and obtain powder, step 2) also includes the step of stirring or ultrasonicating the tungsten source electrolyte during the electrification process.

其中,如采用磁力搅拌,则搅拌的强度优选为600~800rpm;如选择超声,则超声强度优选为1~1.2W/cm2Wherein, if magnetic stirring is used, the stirring intensity is preferably 600-800 rpm; if ultrasonic is selected, the ultrasonic intensity is preferably 1-1.2 W/cm 2 .

如果只需要制备薄膜,则无需上述搅拌或超声过程,通过反应使得铋材表面形成钨酸铋沉积层即可。If it is only necessary to prepare a thin film, the above-mentioned stirring or ultrasonic process is not required, and a bismuth tungstate deposition layer can be formed on the surface of the bismuth material through the reaction.

在本发明中,钨酸铋生成所需的能量源于阳极表面微小区域的电火花,电解液的整体温度低于100℃,在通循环水冷却的情况下电解液可保持在室温,有效降低了能耗;同时,整个制备过程不使用传统工艺中的复杂的有机溶剂,避免了对环境的污染,也简化了合成工艺;整个通电过程,最长在5-10min内即可完成,大大缩短了制备时间,提高了生产效率。In the present invention, the energy required for the generation of bismuth tungstate comes from the electric spark in the tiny area on the surface of the anode, the overall temperature of the electrolyte is lower than 100°C, and the electrolyte can be kept at room temperature under the condition of circulating water cooling, effectively reducing the At the same time, the entire preparation process does not use complex organic solvents in traditional processes, which avoids environmental pollution and simplifies the synthesis process; the entire electrification process can be completed within 5-10 minutes at the longest, greatly shortening The preparation time is shortened and the production efficiency is improved.

具体实施方式Detailed ways

在下述实施中,阳极和阴极的形状不受到限制,板、棒、箔、片、管、网等常规形状或异型件均可。In the following implementations, the shapes of the anode and cathode are not limited, and conventional shapes such as plates, rods, foils, sheets, tubes, and nets or special-shaped pieces are all available.

实施例1Example 1

将单质铋片作为阳极与阴极之间保持1.2cm距离,垂直浸入电解液中2cm,通以恒定电流I=3A并维持5min,该过程中铋材表面持续有电火花出现。对电解液进行强磁力搅拌或超声,溶液中有沉淀生成。将沉淀或带有沉积层的铋材用去离子水洗涤,在60℃干燥,备用。The elemental bismuth sheet was used as the anode and the cathode was kept at a distance of 1.2cm, vertically immersed in the electrolyte solution for 2cm, and a constant current I=3A was passed and maintained for 5min. During this process, electric sparks continued to appear on the surface of the bismuth material. Stir the electrolyte with strong magnetic force or ultrasonic, and precipitates will form in the solution. Wash the precipitated or deposited bismuth material with deionized water, dry at 60°C, and set aside.

其中,电解液为将钨酸钠溶于去离子水中,并加入NaOH溶液调节碱度,超声5min后,得到电解液,其中钨酸根浓度为0.2mol/L、OH-浓度为0.15mol/L。Among them, the electrolyte is sodium tungstate dissolved in deionized water, and NaOH solution is added to adjust the alkalinity. After ultrasonication for 5 minutes, the electrolyte is obtained, wherein the concentration of tungstate is 0.2mol/L, and the concentration of OH - is 0.15mol/L.

如采用磁力搅拌,则搅拌的强度优选为600~800rpm;如选择超声,则超声强度优选为1~1.2W/cm2If magnetic stirring is used, the intensity of stirring is preferably 600-800 rpm; if ultrasound is selected, the intensity of ultrasound is preferably 1-1.2 W/cm 2 .

此种情况可以制备出不规则颗粒状的纳米级粉体粉体,其组成为混相:Bi2WO6+Bi3.84W0.16O6.24,平均粒径为20~60nmIn this case, irregular granular nanoscale powder can be prepared, and its composition is mixed phase: Bi 2 WO 6 +Bi 3.84 W 0.16 O 6.24 , with an average particle size of 20-60nm

实施例2Example 2

将阳极与阴极之间保持2cm距离,垂直浸入电解液(该电解液中含有醇类物质)中3cm,通以恒定电流I=5A并维持3min,该过程中铋材表面持续有电火花出现。对电解液进行强磁力搅拌或超声,溶液中有沉淀生成。将沉淀或带有沉积层的铋材用去离子水洗涤,在60℃干燥,备用。Keep a distance of 2cm between the anode and the cathode, vertically immerse in the electrolyte (the electrolyte contains alcohol substances) for 3cm, pass a constant current I=5A and maintain it for 3min, during which electric sparks continue to appear on the surface of the bismuth material. Stir the electrolyte with strong magnetic force or ultrasonic, and precipitates will form in the solution. Wash the precipitated or deposited bismuth material with deionized water, dry at 60°C, and set aside.

其中,电解液为将钨酸铵溶于去离子水中,并加入KOH溶液调节碱度,超声10min后,得到电解液,其中钨酸根浓度为0.45mol/L、OH-浓度为0.8mol/L。然后加入乙醇,调节介电常数为63.6。Among them, the electrolyte is to dissolve ammonium tungstate in deionized water, and add KOH solution to adjust the alkalinity. After ultrasonication for 10 minutes, the electrolyte is obtained, in which the concentration of tungstate is 0.45mol/L, and the concentration of OH - is 0.8mol/L. Then add ethanol to adjust the dielectric constant to 63.6.

此种情况可以制备出颗粒状纯相纳米级粉体,其组成为:Bi3.84W0.16O6.24,平均粒径为20~30nm。In this case, granular pure-phase nanoscale powder can be prepared, the composition of which is: Bi 3.84 W 0.16 O 6.24 , and the average particle diameter is 20-30nm.

实施例3Example 3

将阳极与阴极之间保持3cm距离,垂直浸入电解液中4.7cm,通以恒定电流I=0.5A并维持3min,该过程中铋材表面持续有电火花出现。对电解液进行弱搅拌或无搅拌条件(优选是无搅拌)下,铋材表面有沉积物生成。将带有沉积层的铋材用去离子水洗涤,在60℃干燥,备用。Keep a distance of 3cm between the anode and the cathode, vertically immerse in the electrolyte solution for 4.7cm, pass a constant current I=0.5A and maintain it for 3min, during which electric sparks continue to appear on the surface of the bismuth material. When the electrolyte is stirred weakly or without stirring (preferably without stirring), deposits are formed on the surface of the bismuth material. The bismuth material with the deposited layer was washed with deionized water, dried at 60°C, and set aside.

其中,电解液为将钨酸溶于去离子水中,并加入KOH溶液调节碱度,超声10min后,得到电解液,其中钨酸根浓度为0.75mol/L、OH-浓度为1.8mol/L。Among them, the electrolyte is to dissolve tungstic acid in deionized water, and add KOH solution to adjust the alkalinity. After ultrasonication for 10 minutes, the electrolyte is obtained, in which the concentration of tungstate is 0.75mol/L, and the concentration of OH - is 1.8mol/L.

此种情况可以制备出浅黄色的钨酸铋涂层,其组成为混合相,即:Bi2WO6+Bi3.84W0.16O6.24,电镜下检测发现涂层表面由纳米级颗粒(平均30nm)和微孔(100~400nm)组成。In this case, a light yellow bismuth tungstate coating can be prepared, and its composition is a mixed phase, namely: Bi 2 WO 6 +Bi 3.84 W 0.16 O 6.24 . The surface of the coating is found to be composed of nano-sized particles (average 30nm) And micropores (100 ~ 400nm).

实施例4Example 4

将阳极与阴极之间保持3cm距离,垂直浸入电解液(该电解液中含有醇类物质)中4cm,通以恒定电流I=4A并维持3min,该过程中铋材表面持续有电火花出现。对电解液进行超声,超声强度为1.2W/cm2,溶液中有沉淀生成。将沉淀用去离子水洗涤,70℃干燥。Keep a distance of 3 cm between the anode and the cathode, vertically immerse in the electrolyte (the electrolyte contains alcohol substances) for 4 cm, pass a constant current I=4A and maintain it for 3 minutes, during which electric sparks continue to appear on the surface of the bismuth material. Ultrasonic is performed on the electrolyte solution with an ultrasonic intensity of 1.2 W/cm 2 , and precipitates are formed in the solution. The precipitate was washed with deionized water and dried at 70°C.

其中,电解液为将钨酸铵溶于去离子水中,并加入KOH溶液调节碱度,超声8min后,得到电解液,其中钨酸根浓度为0.5mol/L、OH-浓度为0.7mol/L;然后加入乙醇,调节介电常数为55.3。Among them, the electrolyte is to dissolve ammonium tungstate in deionized water, and add KOH solution to adjust the alkalinity. After ultrasonication for 8 minutes, the electrolyte is obtained, wherein the concentration of tungstate is 0.5mol/L, and the concentration of OH - is 0.7mol/L; Then add ethanol to adjust the dielectric constant to 55.3.

此种情况可以制备出颗粒状纯相纳米级粉体,其组成为:Bi3.84W0.16O6.24,平均粒径约为20nm。In this case, granular pure-phase nanoscale powder can be prepared, the composition of which is: Bi 3.84 W 0.16 O 6.24 , and the average particle diameter is about 20nm.

以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention within.

Claims (7)

1. the preparation method of bismuth tungstate, is characterized in that comprising the steps: 1) bismuth material, is inserted in the electrolytic solution of tungsten source as negative electrode as anode, platinized platinum; 2) tungsten source electrolytic solution is energized to bismuth material surface and continues there is electrical spark, maintains at least 30s that switches on, and strength of current is at least 0.01A, by the precipitation in electrolytic solution or with the bismuth material washing of settled layer, dry, obtains bismuth tungstate powder or film.
2. according to the preparation method of claim 1, it is characterized in that step 1) bismuth material used is bismuth with elementary or bismuth-tungstenalloy or other alloy material that contains bismuth element; Tungsten used source electrolytic solution is that tungsten source is added to the water, and tungsten used source is sodium wolframate, ammonium tungstate or wolframic acid.
3. according to the preparation method of claim 2, characterized by further comprising to tungsten source electrolytic solution and add inorganic alkali solution to adjust the step of acid-basicity, being adjusted to wolframate radical concentration is 0.01~0.80mol/L, OH -concentration is 0.1~2.0mol/L.
4. according to the preparation method of claim 2, characterized by further comprising to tungsten source electrolytic solution and add small molecules Organic Alcohol to regulate the step of the specific inductivity of electrolytic solution, adjust specific inductivity and be adjusted to 52.4~74.8.
5. according to the preparation method of claim 1, it is characterized in that the distance between anode and negative electrode is 0.5~5cm, the degree of depth that immerses electrolytic solution is 1~6cm.
6. according to the preparation method of claim 1, it is characterized in that the distance between anode and negative electrode is 1~3cm, the degree of depth that immerses electrolytic solution is 2~4cm.
7. according to the preparation method of claim 1, it is characterized in that step 2) in galvanization, tungsten source electrolytic solution is stirred or ultrasonic step.
CN201410357061.3A 2014-07-24 2014-07-24 Preparation method for bismuth tungstate Pending CN104131308A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104561979A (en) * 2014-12-29 2015-04-29 中南大学 Preparation method for bismuth tungstate film
CN107803198A (en) * 2017-10-26 2018-03-16 太原理工大学 A kind of electrochemical preparation method of bismuth tungstate photocatalysis film and its application

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275713A (en) * 1990-07-31 1994-01-04 Rudolf Hradcovsky Method of coating aluminum with alkali metal molybdenate-alkali metal silicate or alkali metal tungstenate-alkali metal silicate and electroyltic solutions therefor
JPH11158692A (en) * 1997-11-25 1999-06-15 Murata Mfg Co Ltd Formation of bismuth titanate coating film
CN101198726A (en) * 2005-06-17 2008-06-11 国立大学法人东北大学 Metal oxide film, laminated body, metal member and manufacturing method thereof
CN103409781A (en) * 2013-08-05 2013-11-27 青岛农业大学 Preparation method for bismuth titanate film layer on basis of micro-arc oxidation technology

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275713A (en) * 1990-07-31 1994-01-04 Rudolf Hradcovsky Method of coating aluminum with alkali metal molybdenate-alkali metal silicate or alkali metal tungstenate-alkali metal silicate and electroyltic solutions therefor
JPH11158692A (en) * 1997-11-25 1999-06-15 Murata Mfg Co Ltd Formation of bismuth titanate coating film
CN101198726A (en) * 2005-06-17 2008-06-11 国立大学法人东北大学 Metal oxide film, laminated body, metal member and manufacturing method thereof
CN103409781A (en) * 2013-08-05 2013-11-27 青岛农业大学 Preparation method for bismuth titanate film layer on basis of micro-arc oxidation technology

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104561979A (en) * 2014-12-29 2015-04-29 中南大学 Preparation method for bismuth tungstate film
CN104561979B (en) * 2014-12-29 2017-11-14 中南大学 The preparation method of bismuth tungstate film
CN107803198A (en) * 2017-10-26 2018-03-16 太原理工大学 A kind of electrochemical preparation method of bismuth tungstate photocatalysis film and its application
CN107803198B (en) * 2017-10-26 2021-03-30 太原理工大学 Electrochemical preparation method and application of bismuth tungstate photocatalytic film

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Application publication date: 20141105