CN104124183A - Device and method for analyzing failures of TSV (through silicon via) wafer level packaged MEMS (micro-electro-mechanical systems) chips - Google Patents

Abstract

The invention discloses a device and a method for analyzing failures of TSV (through silicon via) wafer level packaged MEMS (micro-electro-mechanical systems) chips. The device comprises a microscope, a reflective box and a probe system. The reflective box comprises a shell, two reflective mirrors and transparent glass, a 90-degree angle is formed by the two reflective mirrors in the shell, the transparent glass is arranged at a top opening of the shell, and 45-degree included angles are formed between the reflective mirrors and the bottom of the shell; the probe system comprises probes, probe arms and a probe seat, the probes are connected with the probe seat by the probe arms, and conducting wires are connected onto the probes and are connected with testing devices or power sources. The method includes placing a to-be-analyzed MEMS chip on the transparent glass and pricking the probes on a pressure welding block; inputting excitation voltages into an MEMS structure via the conducting wires; observing response of the MEMS structure via the microscope and judging failure mechanisms of an MEMS device. The device and the method have the advantages that the directions of light rays can be changed by the aid of the reflective mirrors, the failure mechanisms of the MEMS chip can be analyzed without back lenses, the device is simple in structure, and good effects can be realized by the device; the method is simple in operation, and the failures of the to-be-analyzed MEMS chip can be quickly and accurately analyzed by the aid of the method.

Description

Failure analysis device and the analytical method thereof of TSV wafer-level package of MEMS chip

Technical field

The invention belongs to MEMS chip analysis field, specifically relate to a kind of failure analysis device for TSV wafer-level package of MEMS chip, the invention still further relates to the method for utilizing this analytical equipment to carry out the analysis of MEMS chip failure.

Background technology

MEMS (Micro-Electro-Mechanical Systems) is the abbreviation of MEMS (micro electro mechanical system), MEMS manufacturing technology is utilized Micrometer-Nanometer Processing Technology, particularly semiconductor wafer manufacturing technology, produce various MIniature machinery structure, in conjunction with special control integration circuit (ASIC), form the MEMS components and parts such as intelligentized microsensor, microactrator.It is little that MEMS components and parts have volume, cost is low, reliability is high, anti-adverse environment ability is strong, low in energy consumption, intelligent degree is high, easily calibration, advantage easy of integration, be widely used in consumer electronics product (as mobile phone, panel computer, toy, digital camera, game machine, air mouse, remote controller, GPS etc.), national defense industry is (as intelligent bomb, guided missile, Aero-Space, unmanned aerial vehicle etc.) and industrial series products (as automobile, robot, intelligent transportation, industrial automation, environmental monitoring, platform stable control, agricultural modernization, security monitoring etc.), MEMS components and parts become the foundation stone of technology of Internet of things gradually.

Along with portable type electronic product, as the rapid growth in the markets such as mobile phone, panel computer, wearable device, consumer electronics product has become the biggest market of MEMS components and parts, almost in each portable type electronic product, can use multiple MEMS components and parts, taking smart mobile phone as example, it has used gyroscope, accelerometer, altimeter, microphone, digital compass, tuned antenna, filter etc.In order to reach, portable type electronic product is little to MEMS components and parts volume, performance is high, low in energy consumption, low-cost requirement; MEMS components and parts need to first carry out wafer level packaging in disk manufacture process; protect movable, frangible micro mechanical structure; then disk is cut into chip, then encapsulate by common plastics method for packing.

MEMS structure is made up of monocrystalline silicon or polycrystalline silicon material conventionally, and rigidity and the anti-fatigue performance of silicon materials are fine, but more crisp, easily chipping while being subject to external impacts, causes component failure; Defective workmanship in MEMS chip manufacture process, as the peeling off of the deposition materials such as residue, getter, encapsulant is excessive, bond strength is inadequate etc., also can cause component failure; In addition, due to the MEMS structure adhesive in chip manufacture or use procedure that design defect causes, be also modal failure mechanism.In the time analyzing these failure mechanisms, a pumping signal (direct voltage or alternating voltage) is provided must to MEMS structure, then test the parameters such as the electrical leakage, capacitance, resonance frequency, pick-up voltage, motion amplitude of MEMS structure, judge the failure cause of MEMS structure.Square being directly proportional of the electrostatic force of rectangular flat electric capacity and the voltage applying, electrostatic force formula is as follows:

$F=\frac{\mathrm{\ϵab}{U}^2}{2d^2}(1+\frac{d}{\mathrm{\πa}+d}),$

ε is dielectric constant, and a is electric capacity length, and b is electric capacity width, and d is electric capacity spacing, and U is the voltage applying.

As shown in Figure 1, the cover plate 17 of MEMS chip 1, MEMS layer 11 and base plate 16 surround an annular seal space 10 to the MEMS chip of common wafer level packaging, for MEMS structure 11a provide one be not subject to external disturbance, can be freely movable space.Between MEMS layer 11 and cover plate 17, pass through Si-Si bonding or Si-SiO ₂bonding technology combines, and MEMS layer 11 combines by metal sealing layer 12 with base plate 16; Meanwhile, the signal of telecommunication of MEMS structure 11a is sent on the conductive metal layer 14 being clipped between the first insulating barrier 15 and the second insulating barrier 13 by through hole 18, then is drawn from annular seal space 10 by conductive metal layer 14; The second insulating barrier 13 has a pressure welding window 19 that routing is used when encapsulating in the part of annular seal space 10 outsides.A distinguishing feature of this MEMS chip 1 is exactly the side of pressure welding window 19 at MEMS structure 11a, remove after cover plate 17, MEMS structure 11a and pressure welding window 19 expose simultaneously, like this, in the time of failure analysis, probe is pricked on the metal in pressure welding window 19, can directly be observed the response condition of MEMS structure 11a by microscope, thereby carry out failure analysis.

Along with the competition in MEMS components and parts market is more and more fierce, and client requires more and more higher to MEMS components and parts, for further dwindling the volume of MEMS chip, the MEMS chip of TSV (Through Silicon Via, silicon through hole) wafer level packaging becomes inexorable trend.Fig. 2 is the schematic diagram of the MEMS chip 2 of TSV wafer level packaging, surrounds an annular seal space 20 by cover plate 26, MEMS layer 21 and base plate 27, for MEMS structure 21a provide one be not subject to external disturbance, can be freely movable space.MEMS layer 21 can be divided into MEMS structure 21a and MEMS seal area 21b according to function, between MEMS layer 21 and cover plate 26, combines by Si-Si bonding technology, between them, conducts; TSV conductive pole 24 as a cover plate part is also bonded together with MEMS structure 21a simultaneously, between them, also conduct, the signal of telecommunication of MEMS structure 21a can be drawn by TSV conductive pole 24 from annular seal space 20, and TSV conductive pole 24 is isolated by TSV insulating barrier 23 electricity with other parts of cover plate 26; On cover plate 26, there is insulating barrier 25, on insulating barrier 25, have through hole 28, the material of press welding block 29 is metals, this metal has also filled up through hole 28 in forming press welding block 29, press welding block 29 is connected with TSV conductive pole 24 by through hole 28, like this, the signal of MEMS structure 21a is drawn out on press welding block 29 by TSV conductive pole 24 and through hole 28.Seal area 21b and the base plate 27 of MEMS layer 21 combine by sealant 22, and the material of sealant 22 can be SiO ₂, can be also metal.The press welding block 29 of the MEMS chip of this TSV wafer level packaging is positioned at cover plate 26 tops, remove after cover plate 26, press welding block 29 and MEMS structure 21a are distributed in the both sides up and down of cover plate 26, like this, in the time of failure analysis, also cannot utilize and remove cover plate, by the response condition of microscope direct observing MEMS structure 21a, so for the MEMS chip of TSV wafer level packaging, how to carry out failure analysis and just become a current difficult problem.

Summary of the invention

The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, and a kind of failure analysis device of TSV wafer-level package of MEMS chip is provided, and can carry out failure analysis to the MEMS chip of TSV wafer level packaging easily.

Another technical problem that the present invention will solve is to provide the failure analysis method of this TSV wafer-level package of MEMS chip, the method is utilized above-mentioned failure analysis device, can be quick, easy, exactly the MEMS chip of TSV wafer level packaging is carried out to failure analysis.

For solving the problems of the technologies described above, the invention provides a kind of failure analysis device of TSV wafer-level package of MEMS chip, formed by microscope, reflective box and probe system;

Microscope automatic light source, with mobilizable objective table, for observing MEMS structure and the motion thereof of MEMS chip to be analyzed;

Reflective box is by open-topped shell, reflective mirror and clear glass composition, reflective mirror comprises two mutual nearside mirror and right reflective mirrors at an angle of 90, nearside mirror and right reflective mirror are all that minute surface is installed in shell upward, nearside mirror and right reflective mirror and shell bottom surface angle are all 45 °, clear glass covers cover top portion opening part, clear glass parallels with shell bottom surface, MEMS chip to be analyzed can be placed on above clear glass, the incident light perpendicular to clear glass that reflective mirror sends microscope light source is through the reflection of two 90 °, be irradiated in the MEMS structure of MEMS chip to be analyzed, the reverberation again MEMS structure being reflected is through the reflection of two 90 °, turn back in microscopical object lens,

Probe system comprises probe, feeler arm and probe base movably, probe is connected with probe base by feeler arm, on probe, connect wire, wire is connected with testing apparatus or power supply, for the output signal to MEMS structure input signal or detection MEMS structure, probe base is placed on microscopical objective table, and after probe is pricked on the press welding block of MEMS chip to be analyzed, MEMS chip to be analyzed also can free adjustment with respect to the position of micro objective;

Reflective box is placed on microscopical objective table, and the bottom surface of reflective box shell is parallel with objective table, and microscopical object lens are positioned at reflective box top.

The failure analysis device of TSV wafer-level package of MEMS chip of the present invention utilizes the laboratory such as simple microscope, probe station common equipment, only need a special reflective box, utilize the direction of reflective mirror change light in reflective box, do not need back side microscope camera lens, just can observe the motion conditions of MEMS structure, analyze the failure mechanism of MEMS chip, simple in structure, cost is low, effective.

Described reflective box also comprises a pair of locating piece, and locating piece is positioned on clear glass surface, for MEMS chip to be analyzed is limited to fixed position.

There is cavity the position of placing MEMS chip to be analyzed on described clear glass upper surface, when the sealant of MEMS chip to be analyzed is removed with base plate, if now MEMS chip to be analyzed is placed on clear glass, MEMS structure has just lost free-moving space, and just can be MEMS structure, cavity on clear glass provides a free-moving space, widen the scope of MEMS chip to be analyzed, made analytical equipment application of the present invention more extensive.

On described clear glass, there is the part that light passes through to have loophole, for incident ray and reflection ray provide without glazing channel, can reduce the surface reflection of clear glass, dwindle light loss and image deterioration degree, make analysis result more accurately, more approach actual conditions.

On described clear glass, have step with respect to the position of MEMS chip to be analyzed, the MEMS seal area of MEMS chip to be analyzed is carried on step, in providing free movement space for MEMS structure, also for reflection ray provides paneless passage.

Described probe system also comprises probe station, probe station separates with microscopical objective table, and described probe base is placed on microscope carrier, also can be placed on probe station, regulate the position of probe by probe base top to bottom, left and right, front and rear, probe is pricked on the press welding block of MEMS chip to be analyzed.

For solving another technical problem of the present invention, the invention provides a kind of failure analysis method of TSV wafer-level package of MEMS chip, concrete steps are:

(1) remove the base plate of the MEMS chip of TSV wafer level packaging by methods such as acid soak, heating or mechanical forces, expose MEMS structure, obtain MEMS chip to be analyzed;

(2) microscope uses little multiplying power object lens, open microscope light source, regulate microscope focal length, by MEMS chip to be analyzed by press welding block upward, MEMS structure mode is down fixed on objective angular field edge, from microscopical observation, probe is penetrated on the press welding block of MEMS chip to be analyzed;

(3) little multiplying power object lens are switched to large multiplying power object lens, regulate microscope focal length, incident light is irradiated in the MEMS of MEMS chip to be analyzed structure, the reverberation of MEMS structure reflection simultaneously returns to object lens, now, from microscope, only can see the MEMS structure of MEMS chip to be analyzed, by the wire on probe, to MEMS structure input stimulus voltage, the motion conditions of observing or record MEMS structure from microscope is analyzed the failure mechanism of MEMS device.

Failure analysis method of the present invention only need to be by MEMS chip to be analyzed according to press welding block upward, MEMS structure mode is down placed on the fixed position of reflective box, probe on pricking on press welding block, input signal, utilize the reflective mechanism of reflective mirror just can be by the response condition of microscopic examination MEMS structure, and then analysis chip failure mechanism, simple, easy to operate, can be quick, easy, exactly the MEMS chip of TSV wafer level packaging is carried out to failure analysis.

Brief description of the drawings

Fig. 1 is the structural representation of common wafer-level package of MEMS chip.

Fig. 2 is the structural representation of TSV wafer-level package of MEMS chip.

Fig. 3 is the structural representation of analytical equipment when microscope uses little multiplying power object lens in the embodiment of the present invention one.

Fig. 4 is the structural representation of analytical equipment when microscope uses large multiplying power object lens in the embodiment of the present invention one.

Fig. 5 is that the MEMS chip to be analyzed of the embodiment of the present invention one is placed the enlarged drawing at position.

Fig. 6 is that the MEMS chip to be analyzed of the embodiment of the present invention two is placed the enlarged drawing at position.

Fig. 7 is the structural representation of the analytical equipment of the embodiment of the present invention three.

Fig. 8 is that the MEMS chip to be analyzed of the embodiment of the present invention three is placed the enlarged drawing at position.

Fig. 9 is the structural representation of MEMS chip to be analyzed described in the embodiment of the present invention four.

Figure 10 is the structural representation of MEMS chip to be analyzed described in the embodiment of the present invention five, embodiment six.

Embodiment

Below in conjunction with drawings and Examples, the invention will be further described.

Embodiment mono-

The failure analysis device of TSV wafer-level package of MEMS chip as shown in Figure 3, Figure 4, is made up of microscope, reflective box 4 and probe system 5;

Microscope automatic light source, with little multiplying power object lens 31a, large multiplying power object lens 31b and mobilizable objective table 32, for observe MEMS chip 2 to be analyzed ' MEMS structure 21a and motion thereof;

The effect of reflective box 4 be reflection ray and carrying MEMS chip 2 to be analyzed ', by open-topped shell 41, reflective mirror, the locating piece 44 of clear glass 43 and a pair of fixing MEMS chip to be analyzed 2 ' use forms, reflective mirror comprises two mutual nearside mirror 42a and right reflective mirror 42b at an angle of 90, nearside mirror 42a and right reflective mirror 42b are that minute surface is installed in shell 41 upward, nearside mirror 42a and right reflective mirror 42b and shell 41 bottom surface angles are all 45 °, clear glass 43 covers shell 41 top open parts, clear glass 43 parallels with shell 41 bottom surfaces, locating piece 44 is positioned on clear glass 43 surfaces, for by MEMS chip 2 to be analyzed ' be limited to fixed position, MEMS chip 2 to be analyzed ' can be placed on above clear glass 43, see through clear glass 43 by the incident light A of little multiplying power object lens 31a or large multiplying power object lens 31b and arrive nearside mirror 42a, reflex to right reflective mirror 42b by nearside mirror 42a, again by right reflective mirror 42b reflex to MEMS chip 2 to be analyzed ' on, nearside mirror 42a and right reflective mirror 42b arrange mutually at an angle of 90, and with shell 41 angles at 45 °, bottom surface, like this, perpendicular to the incident light A of clear glass 43 after reflective box 4 vertical irradiation to be positioned over MEMS chip 2 to be analyzed on clear glass 43 ' MEMS structure 21a on, the reverberation B of MEMS chip 2 to be analyzed ' be reflected back is reflected back in reflective box 4, and successively through right reflective mirror 42b and nearside mirror 42a reflection, finally get back in little multiplying power object lens 31a or large multiplying power object lens 31b, just can with the observation of order eye or with camera record MEM chip 2 to be analyzed ' the motion conditions of MEMS structure 21a.

Probe system 5 comprises probe 51, feeler arm 53, probe base 54 and probe station 55, on probe 51, connect wire 52, wire 52 is connected with testing apparatus or power supply, can be by probe 51 to MEMS structure 21a input signal, probe 51 is fixed on probe base 54 by feeler arm 53, probe base 54 is placed on probe station 55, probe station 55 separates with microscopical objective table 32, regulate probe base 54 drive feeler arm 53 and probe 51 can top to bottom, left and right, front and rear all directions fine setting probe 51 with respect to MEMS chip 2 to be analyzed ' the position of press welding block 29.

Reflective box 4 is placed on microscopical objective table 32, and the bottom surface of reflective box shell 41 is parallel with objective table 32, and microscopical object lens are positioned at reflective box 4 tops.

Fig. 3 is the schematic diagram of microscope while using little multiplying power object lens 31a, now, visual field 31a ' is larger, by MEMS chip 2 to be analyzed ' be placed in the locating piece 44 at 31a ' edge, visual field, now regulate microscopical focal length, can see MEMS chip 2 to be analyzed ' and its on press welding block 29, also can see MEMS structure 21a; Under little multiplying power object lens 31a, probe 51 is pricked on press welding block 29, then little multiplying power object lens 31a is switched to large multiplying power object lens 31b as shown in Figure 4, now visual field 31b ' is less, can only see the MEMS structure 21a of amplification, can't see press welding block 29 and probe 51; Apply like this voltage, just observe the response condition of MEMS structure 21a.

Fig. 5 is the enlarged drawing at MEMS chip 2 to be analyzed ' placement position, MEMS chip 2 to be analyzed ' press press welding block 29 upward, sealant 22 and MEMS structure 21a mode are down placed on clear glass 43, due to MEMS chip 2 to be analyzed ' remain sealant 22, so when MEMS chip 2 to be analyzed ' be directly placed on clear glass 43, between MEMS structure 21a and clear glass 43, have a gap 6, MEMS structure 21a can be freely movable; Two locating pieces 44 are by MEMS chip 2 to be analyzed ' fix, and two probes 51 are pricked respectively on two press welding blocks 29, and by wire 52 to MEMS chip 2 to be analyzed ' apply driving voltage, the response condition that just can observe MEMS structure 21a.

Embodiment bis-

The failure analysis device difference of the failure analysis device of the TSV wafer-level package of MEMS chip of the present embodiment and the TSV wafer-level package of MEMS chip of embodiment mono-is only: on clear glass 43 upper surfaces, place MEMS chip 2 to be analyzed " position have cavity 43a, as shown in Figure 6.While " thering is no sealant 22; can not be placed directly on clear glass 43; need to make a cavity 43a on clear glass 43; like this; at placement MEMS chip 2 to be analyzed " due to MEMS chip 2 to be analyzed, MEMS seal area 21b contacts with clear glass 43, and MEMS structure 21a is located in cavity 43a, can free movement, MEMS chip 2 " irremovable problem after having solved example one middle probe 51 and pricking on press welding block 29.

Embodiment tri-

The failure analysis device of TSV wafer-level package of MEMS chip as shown in Figure 7, is made up of microscope, reflective box 4 and probe system 5;

Microscope automatic light source, with object lens 31 and mobilizable objective table 32, for observing MEMS chip 2 to be analyzed " MEMS structure 21a and motion thereof;

The effect of reflective box 4 is reflection ray and carrying MEMS chip 2 to be analyzed ", by open-topped shell 41, reflective mirror and clear glass 43 form, reflective mirror comprises two mutual nearside mirror 42a and right reflective mirror 42b at an angle of 90, nearside mirror 42a and right reflective mirror 42b are that minute surface is installed in shell 41 upward, nearside mirror 42a and right reflective mirror 42b and shell 41 bottom surface angles are all 45 °, clear glass 43 covers shell 41 top open parts, clear glass 43 parallels with shell 41 bottom surfaces, there are loophole 43b and 43c in the position that clear glass 43 glazed threads pass through, below just to large multiplying power object lens 31b, there is loophole 43b, place MEMS chip 2 to be analyzed " position have loophole 43c, like this, incident light A enters reflective box 1 by loophole 43b, through reflective mirror 42a, after 42b reflection, be irradiated to MEMS chip 2 to be analyzed by loophole 43c " on, MEMS chip 2 to be analyzed " the reverberation B of reflection get back to reflective box 1 by loophole 43c, through reflective mirror 42b, after 42a reflection, get back in micro objective by loophole 43b, whole process light does not need through clear glass 43, refraction and the surface reflection of glass are avoided.In the time making loophole 43c, on clear glass 43, form step, to hold MEMS chip 2 to be analyzed ", as shown in Figure 8, like this; at placement MEMS chip 2 to be analyzed " time, MEMS seal area 21b directly contacts with clear glass 43, by MEMS chip 2 to be analyzed, and " be carried on the step of clear glass 43, MEMS structure 21a is arranged in loophole 43c; not only can make MEMS structure 21a free movement, can also play the fixing MEMS chip 22 " effect of position to be analyzed.

Probe system 5 comprises probe 51, feeler arm 53 and movably probe base 54, on probe 51, connect wire 52, wire 52 is connected with testing apparatus or power supply, by probe 51 to MEMS structure 21a input signal, probe 51 is fixed on probe base 54 by feeler arm 53, probe base 54 is placed on microscopical objective table 32, like this, probe base 54 and reflective box 1 are all placed on objective table 32, only have soft wire 52 to be connected with external tester or power supply, " position is no longer subject to the restriction of micro objective visual field size to MEMS chip 22 to be analyzed, tie for 31 times after probe 51 at high magnification or low range object lens, MEMS chip 22 to be analyzed " can with probe 51, feeler arm 53, probe base 54, reflective box 1 is together with objective table 32 front and back, move left and right.

Reflective box 4 is placed on microscopical objective table 32, and the bottom surface of reflective box shell 41 is parallel with objective table 32, and microscopical object lens 31 are positioned at reflective box 4 tops.

Embodiment tetra-

The failure analysis method of the device of TSV wafer-level package of MEMS chip, concrete steps are:

(1) remove the base plate of the MEMS chip of TSV wafer level packaging by the method for hydrofluoric acid (HF) acid soak, mechanical force, expose sealant 22 and MEMS structure 21a, obtain MEMS chip 2 to be analyzed as shown in Figure 9 ';

(2) microscope uses little multiplying power object lens 31a, open microscope light source, regulate microscope focal length, by MEMS chip 2 to be analyzed ' by press welding block 29 upward, sealant 22 and MEMS structure 21a mode be down placed between the locating piece 44 at objective angular field 31a ' edge, now, between MEMS structure 21a and clear glass 43, there is space, MEMS structure 21a can free movement, under microscopical observation, probe 51 is penetrated MEMS chip 2 to be analyzed ' press welding block 29 on, as shown in Fig. 3, Fig. 5;

(3) little multiplying power object lens 31a is switched to large multiplying power object lens 31b, as shown in Figure 4, regulate microscope focal length, make incident light A be radiated at MEMS chip 2 to be analyzed ' MEMS structure 21a on, the reverberation B of MEMS structure 21a reflection returns in object lens simultaneously, now, from microscope, only can see MEMS chip 2 to be analyzed ' MEMS structure 21a, can't see press welding block 29 and probe 51, by the wire 52 on probe 51 to MEMS structure 21a input stimulus voltage, the motion conditions of observing or record MEMS structure from microscope is analyzed the failure mechanism of MEMS device.

MEMS chip 2 to be analyzed described in the present embodiment ' comprise successively from bottom to up sealant 22, MEMS layer 21, cover plate 26, insulating barrier 25 and press welding block 29, MEMS layer 21 can be divided into MEMS structure 21a and MEMS seal area 21b according to function, between MEMS layer 21 and cover plate 26, combine by Si-Si bonding technology, between them, conduct; TSV conductive pole 24 as a cover plate part is also bonded together with MEMS structure 21a simultaneously, between them, also conduct, the signal of telecommunication of MEMS structure 21a can be drawn by TSV conductive pole 24 from annular seal space 20, and TSV conductive pole 24 is isolated by TSV insulating barrier 23 electricity with other parts of cover plate 26; On cover plate 26, there is insulating barrier 25, on insulating barrier 25, have through hole 28, the material of press welding block 29 is metals, this metal has also filled up through hole 28 in forming press welding block 29, press welding block 29 is connected with TSV conductive pole 24 by through hole 28, like this, the signal of MEMS structure 21a is drawn out on press welding block 29 by TSV conductive pole 24 and through hole 28.Seal area 21b and the sealant 22 of MEMS layer 21 combine, and the material of sealant 22 is SiO ₂, this MEMS chip 2 to be analyzed ' itself have and can, for the space of MEMS structure 21a motion, therefore not need to utilize failure analysis device again for it provides space.

Embodiment five

The failure analysis method of the device of TSV wafer-level package of MEMS chip, concrete steps are:

(1) remove base plate and the sealant of the MEMS chip of TSV wafer level packaging by the method for heating, mechanical force, expose MEMS structure 21a, obtain MEMS chip 2 to be analyzed as shown in figure 10 ";

(2) microscope uses little multiplying power object lens 31a, open microscope light source, regulate microscope focal length, by MEMS chip 2 to be analyzed " by press welding block 29 upward, MEMS structure 21a mode is down placed on clear glass 43; and fix its position with locating piece 44; now; MEMS seal area 21b is carried on clear glass 43 surfaces; contact with clear glass 43; MEMS structure 21a is arranged in cavity 43a, can free movement, probe 51 be penetrated to MEMS chip 2 to be analyzed under microscopical observation " press welding block 29 on, as shown in Figure 6;

(3) little multiplying power object lens 31a is switched to large multiplying power object lens 31b, regulate microscope focal length, make incident light A be radiated at MEMS chip 2 to be analyzed " MEMS structure 21a on; the reverberation B of simultaneously MEMS structure 21a reflection returns in object lens; now; from microscope, only can see MEMS chip 2 to be analyzed " MEMS structure 21a, can't see press welding block 29 and probe 51, by the wire 52 on probe 51, to MEMS structure 21a input stimulus voltage, the motion conditions of observing or record MEMS structure from microscope is analyzed the failure mechanism of MEMS device.

Embodiment six

The failure analysis method of the device of TSV wafer-level package of MEMS chip, concrete steps are:

(1) remove base plate and the sealant of the MEMS chip of TSV wafer level packaging by the method for heating, mechanical force, expose MEMS structure 21a, obtain MEMS chip 2 to be analyzed as shown in figure 10 ";

(2) microscope uses little multiplying power object lens 31a, open microscope light source, regulate microscope focal length, by MEMS chip 2 to be analyzed " by press welding block 29 upward, that MEMS structure 21a mode is down placed on the step 43d of clear glass 43 is upper, now, MEMS seal area 21b contacts with clear glass 43; MEMS structure 21a is arranged in loophole 43c; can free movement, probe 51 is penetrated to MEMS chip 2 to be analyzed under microscopical observation " press welding block 29 on, as shown in Figure 8;

(3) by regulating microscope carrier 32 to finely tune MEMS chip 2 to be analyzed " with respect to the position of micro objective;

(4) little multiplying power object lens 31a is switched to large multiplying power object lens 31b, regulate microscope focal length, make incident light A through loophole 43b, loophole 43c is radiated at MEMS chip 2 to be analyzed " MEMS structure 21a on, the reverberation B of MEMS structure 21a reflection is through loophole 43c simultaneously, loophole 43b returns in object lens, now, from microscope, only can see MEMS chip 2 to be analyzed " MEMS structure 21a, can't see press welding block 29 and probe 51, as shown in Figure 7, by the wire 52 on probe 51 to MEMS structure 21a input stimulus voltage, the motion conditions of observing or record MEMS structure from microscope judges the failure mechanism of MEMS device.

MEMS chip 2 to be analyzed described in embodiment five and embodiment six " comprise successively from bottom to up MEMS layer 21, cover plate 26, insulating barrier 25 and press welding block 29; MEMS layer 21 can be divided into MEMS structure 21a and MEMS seal area 21b according to function; between MEMS layer 21 and cover plate 26, combine by Si-Si bonding technology, between them, conduct; TSV conductive pole 24 as a cover plate part is also bonded together with MEMS structure 21a simultaneously, between them, also conduct, the signal of telecommunication of MEMS structure 21a can be drawn by TSV conductive pole 24 from annular seal space 20, and TSV conductive pole 24 is isolated by TSV insulating barrier 23 electricity with other parts of cover plate 26; On cover plate 26, there is insulating barrier 25, on insulating barrier 25, have through hole 28, the material of press welding block 29 is metals, this metal has also filled up through hole 28 in forming press welding block 29, press welding block 29 is connected with TSV conductive pole 24 by through hole 28, and like this, the signal of MEMS structure 21a is drawn out on press welding block 29 by TSV conductive pole 24 and through hole 28, this MEMS chip 2 to be analyzed " itself does not have for the space of MEMS structure 21a motion, need to utilize failure analysis device to provide free-moving space for it.

Claims (8)

1. The failure analysis device of 1.TSV wafer-level package of MEMS chip, is characterized in that: it is made up of the microscope of automatic light source, reflective box and probe system;

   Described reflective box is made up of open-topped shell, reflective mirror and clear glass, reflective mirror comprises two mutual nearside mirror and right reflective mirrors at an angle of 90, nearside mirror and right reflective mirror are all that minute surface is placed in shell upward, nearside mirror and right reflective mirror and shell bottom surface angle are all 45 °, clear glass covers cover top portion opening part, and clear glass parallels with shell bottom surface;

   Described probe system comprises probe, feeler arm and probe base movably, and probe is connected with probe base by feeler arm, connects wire on probe, and wire is connected with testing apparatus or power supply;

   Described reflective box is placed on microscopical objective table, and the bottom surface of reflective box shell is parallel with objective table, and microscopical object lens are positioned at reflective box top.
2. 2. the failure analysis device of TSV wafer-level package of MEMS chip according to claim 1, is characterized in that: described reflective box also comprises a pair of locating piece, and locating piece is positioned on clear glass upper surface.
3. 3. the failure analysis device of TSV wafer-level package of MEMS chip according to claim 1 and 2, is characterized in that: on described clear glass, have cavity with respect to the position of MEMS chip to be analyzed.
4. 4. the failure analysis device of TSV wafer-level package of MEMS chip as claimed in claim 1 or 2, is characterized in that: on described clear glass, have the place that light passes through to have loophole.
5. 5. the failure analysis device of TSV wafer-level package of MEMS chip according to claim 4, is characterized in that: on described clear glass, have step with respect to the position of MEMS chip to be analyzed.
6. 6. the failure analysis device of TSV wafer-level package of MEMS chip according to claim 1 and 2, is characterized in that: described probe base is placed on microscope carrier.
7. 7. the failure analysis device of TSV wafer-level package of MEMS chip according to claim 1 and 2, is characterized in that: described probe system also comprises probe station, probe station separates with microscopical objective table, and described probe base is placed on probe station.
8. The failure analysis method of 8.TSV wafer-level package of MEMS chip, concrete steps are:

   (1) remove the base plate of TSV wafer-level package of MEMS chip, expose MEMS structure, obtain MEMS chip to be analyzed;

   (2) microscope uses little multiplying power object lens, open microscope light source, regulate microscope focal length, by MEMS chip to be analyzed by press welding block upward, MEMS structure mode is down fixed on objective angular field edge, from microscopical observation, probe is penetrated on the press welding block of MEMS chip to be analyzed;

   (3) little multiplying power object lens are switched to large multiplying power object lens, regulate microscope focal length, incident light is irradiated in the MEMS of MEMS chip to be analyzed structure, the reverberation of MEMS structure reflection simultaneously returns to object lens, by the wire on probe, to MEMS structure input stimulus voltage, the motion conditions of observing or record MEMS structure is analyzed the failure mechanism of MEMS device.