CN104103561B - Etching cavity and etching system thereof for gaseous hydrogen fluoride etching silicon dioxide - Google Patents
Etching cavity and etching system thereof for gaseous hydrogen fluoride etching silicon dioxide Download PDFInfo
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- CN104103561B CN104103561B CN201410354793.7A CN201410354793A CN104103561B CN 104103561 B CN104103561 B CN 104103561B CN 201410354793 A CN201410354793 A CN 201410354793A CN 104103561 B CN104103561 B CN 104103561B
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- 238000005530 etching Methods 0.000 title claims abstract description 124
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910000040 hydrogen fluoride Inorganic materials 0.000 title claims abstract description 22
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 114
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 42
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 239000002253 acid Substances 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 8
- 210000003437 trachea Anatomy 0.000 claims description 3
- 238000000034 method Methods 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 229960004756 ethanol Drugs 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 229960000935 dehydrated alcohol Drugs 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a kind of etching cavity for gaseous hydrogen fluoride etching silicon dioxide and system thereof, described system includes: etching cavity, gas generation apparatus and control system, gas generation apparatus is for the etching gas that will produce, nitrogen and alcohol gas carry out Mixed design in etching cavity, described etching cavity is provided with air inlet and gas outlet, rotation platform it is provided with in etching cavity, heater and gas flow-harmonization device, the mixed gas entering etching cavity is sufficiently mixed by gas flow-harmonization device, semiconductor device to be etched it is placed with on rotation platform, control system controls gas generation apparatus and produces mixed gas, mixed gas is sufficiently mixed in etching cavity, control system control rotation platform rotates and controls heater and heats.
Description
Technical field
The present invention relates to etching equipment technical field, particularly relate to a kind of etching cavity for gaseous hydrogen fluoride etching silicon dioxide and etching system thereof.
Background technology
MEMS manufacturing process is substantially similar with quasiconductor and microelectronic technique, include photoetching, extension, thin-film deposition, aoxidize, spread, inject, sputter, be deposited with, etch, the basic process steps such as scribing and encapsulation.The most traditional lithographic method is dry plasma etch and selective wet etching, and the former cannot realize large area deep hole etching, and the basic demand of this MEMS technology just.
In traditional wet-etching technology, (include in the recent period it has been proposed that normal pressure and temperature gaseous state hf etching) is all to corrode silicon dioxide with Fluohydric acid., the existence of water is had due to etching process and later stage during cleaning, cause in etching process owing to the effect such as stress or surface tension causes adhesion, and structural breakdown may be caused, eventually to technique failure；And owing to the degree of depth of etching is relatively deep, cause uniformity the most not ideal.
Summary of the invention
The technical problem to be solved is to provide a kind of etching cavity for gaseous hydrogen fluoride etching silicon dioxide and etching system thereof, described system performs etching by using anhydrous hydrogen fluoride steam to combine dehydrated alcohol steam, avoid in etching process owing to the effects such as the stress of water or surface tension cause device adhesion maybe may cause the phenomenon of structural breakdown, and by using etching cavity, course of reaction can be efficiently controlled, improve etching homogeneity.
nullFor solving above-mentioned technical problem，The technical solution used in the present invention is: a kind of etching cavity for gaseous hydrogen fluoride etching silicon dioxide，It is characterized in that: described etching cavity includes cavity main body、Upper cover、Trachea、Rotation platform、Uniform flow pipe、Heater and even flow plate，The top of described cavity main body uses upper cover to seal，Cavity main body is provided with air inlet and gas outlet，Described air inlet and gas outlet are positioned at the left and right sides of described cavity main body，It is provided with air inlet pipe in described air inlet，Escape pipe it is provided with in gas outlet，Air inlet pipe within cavity main body is provided with air inlet uniform flow pipe，Escape pipe within cavity main body is provided with uniform flow pipe of giving vent to anger，The left side of described air inlet uniform flow pipe is provided with air inlet even flow plate，The described right side giving vent to anger uniform flow pipe is provided with even flow plate of giving vent to anger，It is provided with right heater between described air inlet uniform flow pipe and air inlet even flow plate，The described uniform flow pipe and give vent to anger and be provided with left heater between even flow plate of giving vent to anger，Air inlet even flow plate and holding interval between even flow plate of giving vent to anger are arranged，Described rotation platform is at air inlet even flow plate and gives vent to anger between even flow plate.
Further technical scheme is: described uniform flow pipe is T-shaped.
Further technical scheme is: described even flow plate is provided with passage.
The invention also discloses a kind of system for gaseous hydrogen fluoride etching silicon dioxide, it is characterized in that including: above-mentioned etching cavity, gas generation apparatus and control system, gas generation apparatus is for the etching gas that will produce, nitrogen and alcohol gas carry out Mixed design in etching cavity, described etching cavity is provided with air inlet and gas outlet, rotation platform it is provided with in etching cavity, heater and gas flow-harmonization device, the mixed gas entering etching cavity is sufficiently mixed by gas flow-harmonization device, semiconductor device to be etched it is placed with on rotation platform, control system controls gas generation apparatus and produces mixed gas, mixed gas is sufficiently mixed in etching cavity, control system control rotation platform rotates and controls heater and heats.
Further technical scheme is: described etching system also includes vacuum pump and exhaust gas processing device, the gas outlet of described etching cavity is connected with the air inlet of exhaust gas processing device by vacuum pump, control system controls vacuum pump and carries out air-breathing, is negative pressure state in making etching cavity.
Further technical scheme is: described gas generating unit includes fluohydric acid gas gas tank, nitrogen pot and ethanol evaporating tank, and the gas outlet of described fluohydric acid gas gas tank air inlet through air relief valve and effusion meter with described etching cavity successively is tightly connected；The gas outlet of described nitrogen pot air inlet through air relief valve and effusion meter with described etching cavity successively is tightly connected；Described ethanol evaporating tank is tightly connected by the air inlet of effusion meter and pipeline with described etching cavity.
Further technical scheme is: described control system uses PLC as controller.
Use and have the beneficial effects that produced by technique scheme: described gas etching system uses anhydrous hydrogen fluoride steam (VHF) to combine dehydrated alcohol steam and performs etching, do not comprise water or steam, avoid in etching process owing to the effects such as the stress of water or surface tension cause device adhesion maybe may cause the phenomenon of structural breakdown, owing to taking the lithographic method of anhydrous hydrogen fluoride gas so that parts and deep chamber parts that etching structure is less become very easy；Owing to control system uses PLC and touch screen human-computer interface, the technological parameters such as accurate control temperature, flow, pressure, etching cavity plus particular design, even mechanism of qi structure and wafer rotating mechanism it is provided with in etching cavity, course of reaction can be efficiently controlled, improve etching homogeneity, keep higher selectivity simultaneously.
Accompanying drawing explanation
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings.
Fig. 1 is the theory diagram of system of the present invention；
Fig. 2 is the decomposition texture schematic diagram of etching cavity in Fig. 1；
Wherein: 1, gas generation apparatus 11, fluohydric acid gas gas tank 12, nitrogen pot 13, ethanol evaporating tank 14, effusion meter 15, air relief valve 2, etching cavity 21, cavity main body 22, upper cover 23, rotation platform 24, air inlet pipe 25, escape pipe 26, air inlet uniform flow pipe 27, uniform flow pipe 28 of giving vent to anger, air inlet even flow plate 29, even flow plate 210 of giving vent to anger, right heater 211, left heater 3, control system 4, vacuum pump 5, exhaust gas processing device.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention can also use other to be different from alternate manner described here to be implemented, those skilled in the art can do similar popularization in the case of intension of the present invention, and therefore the present invention is not limited by following public specific embodiment.
First as in figure 2 it is shown, the invention discloses a kind of etching cavity for gaseous hydrogen fluoride etching silicon dioxide, described etching cavity 2 includes cavity main body 21, upper cover 22, trachea, rotation platform 23, uniform flow pipe, heater and even flow plate.The top of described cavity main body 21 uses upper cover 22 to seal, cavity main body 21 is provided with air inlet and gas outlet, described air inlet and gas outlet are positioned at the left and right sides of described cavity main body, air inlet pipe 24 it is provided with in described air inlet, escape pipe 25 it is provided with in gas outlet, air inlet pipe 24 within cavity main body 21 is provided with air inlet uniform flow pipe 26, escape pipe 25 within cavity main body 21 is provided with uniform flow pipe 27 of giving vent to anger, described uniform flow pipe is T-shaped, for air inlet uniform flow pipe 26, the lower end of uniform flow pipe is air inlet, and the opening of the left and right sides, upper end is gas outlet；For uniform flow pipe 27 of giving vent to anger, the lower end of uniform flow pipe is gas outlet, and the opening of the left and right sides, upper end is air inlet.
The left side of described air inlet uniform flow pipe 26 is provided with air inlet even flow plate 28, the described right side giving vent to anger uniform flow pipe 27 is provided with even flow plate 29 of giving vent to anger, it is provided with right heater 210 between described air inlet uniform flow pipe 26 and air inlet even flow plate 28, the described uniform flow pipe 27 and give vent to anger and be provided with left heater 211 between even flow plate 29 of giving vent to anger, air inlet even flow plate 28 and holding interval between even flow plate 29 of giving vent to anger are arranged, described even flow plate is provided with passage, the diameter of passage can be arranged to the least, for making the mixed gas composition that passes through evenly；Little cavity is formed between air inlet even flow plate 28, cavity main body 21 and upper cover 22 and between even flow plate 29 of giving vent to anger, cavity main body 21 and upper cover 22, air inlet even flow plate 28, even flow plate 29 of giving vent to anger, forming large cavity between cavity main body 21 and upper cover 22, described rotation platform 23 is in air inlet even flow plate 28 and the large cavity given vent to anger between even flow plate 29.
In order to reach to improve the purpose of etching homogeneity, etching cavity takes secondary uniform flow (uniform flow of the most T-shaped uniform flow pipe, even flow plate secondary uniform flow), rotation platform, and the measure such as cavity symmetric design, and take heating plate to heat, Temperature Distribution staged thermograde from top to bottom, improves the uniformity of etching with this.
During work, the etchant gas of mixing is at etching cavity gas outlet under the effect of vacuum pump, enter in cavity from air inlet, it is introduced into air inlet uniform flow pipe, dispensing gas is preliminarily formed in loculus body between air inlet even flow plate and cavity main body, again the aperture on air inlet even flow plate enter in air inlet even flow plate 28 and the large cavity given vent to anger between even flow plate 29, form uniform laminar gas, uniform flow the surface of wafer, give vent to anger even flow plate and uniform flow pipe of giving vent to anger arrives gas outlet through the again, complete the corrosion to wafer.In the process, rotate under the drive of rotation platform motor simultaneously, further improve uniformity in the sheet of etching.The heater of multiparty control is arranged on the outside of chamber, and by adjusting top-down temperature gradient distribution, good improves uniformity between sheet.
As it is shown in figure 1, the invention also discloses a kind of system for gaseous hydrogen fluoride etching silicon dioxide, including: above-mentioned etching cavity 2, gas generation apparatus 1, control system 3, vacuum pump 4 and exhaust gas processing device 5.
Gas generation apparatus 1 is for the etching gas that will produce, nitrogen and alcohol gas carry out Mixed design in etching cavity 2, described etching cavity 2 is provided with air inlet and gas outlet, it is provided with rotation platform in etching cavity 2, heater and gas flow-harmonization device, the mixed gas entering etching cavity 2 is sufficiently mixed by gas flow-harmonization device, semiconductor device to be etched it is placed with on rotation platform 23, control system 3 controls gas generation apparatus 1 and produces mixed gas, mixed gas is sufficiently mixed in etching cavity 2, control system 3 controls rotation platform and rotates and control heater and heat, the gas outlet of described etching cavity 2 is connected with the air inlet of exhaust gas processing device 5 by vacuum pump 4, control system controls vacuum pump and carries out air-breathing, it is negative pressure state in making etching cavity 2.
Described gas generating unit 1 includes fluohydric acid gas gas tank 11, nitrogen pot 12 and ethanol evaporating tank 13, and the gas outlet of described fluohydric acid gas gas tank 11 air inlet through air relief valve 15 and effusion meter 14 with described etching cavity 2 successively is tightly connected；The gas outlet of described nitrogen pot 12 air inlet through air relief valve 15 and effusion meter 14 with described etching cavity 2 successively is tightly connected；Described ethanol evaporating tank 13 is tightly connected by the air inlet of effusion meter 14 and pipeline with described etching cavity 2.
In pipeline, 2-3Kg/cm is become after liquid hydrogen fluoride evaporation2Fluohydric acid gas, (rear end is needed to have vacuum as power by becoming the fluohydric acid gas steam of slightly less than normal pressure through air relief valve decompression, this measure is the leakage in order to prevent VHF), effective flow-control is carried out again through mass flowmenter (MFC), enter back into etching cavity, in technique, it is used as etching agent, as critical process gas, carrys out etching silicon dioxide.
Gaseous state ethanol, liquid ethanol becomes steam from ethanol gasification tank, then mass flowmenter with stop valve carries out effective flow-control through two ends, and subsequently into etching cavity, in technique, it is used as dehydrant and etch rate assist control.
High pure nitrogen, after air relief valve reduces pressure, then mass flowmenter with stop valve carries out effective flow-control, subsequently into etching cavity through two ends.
Acting as of nitrogen: A, displacement: i.e. before etching, the air of intracavity is become after displacement for several times pure nitrogen, it is to avoid etching technics is impacted by air；After etching, remnants etching gas is replaced into pure nitrogen, it is to avoid the person and equipment are damaged；B, vacuum breaker: when needing, become normal pressure by inflated with nitrogen by intracavity negative pressure, in order to opens chamber door；C, cavity pressure adjust: in reaction, by the method adding appropriate nitrogen, reach not change VHF flow and change the purpose of cavity pressure.
On the one hand vacuum pump is true provides suitable operation pressure environment for etching cavity, and on the other hand it also serves as VHF and alcohol vapour transmission provides power, and the control of vacuum pressure realizes the closed loop control of pressure by the frequency control of pressure transducer and vacuum pump.
Temperature control system is divided into three warm areas, is gas panels ambient temperature respectively, etching cavity temperature, ethanol gas gasifying device temperature.The relatively independent loop cooling control in these three portion, can be respectively set to different temperature, and the Temperature Distribution of etching cavity can also be arranged to the most different staged Temperature Distribution, to meet different process requirements.
The task of exhaust gas processing device be will etching after vent gas treatment be to meet the gas of environmental requirement, mainly absorption tower function, absorb residual fluorinated hydrogen therein, and partial reaction product such as SiF4, H2O etc..
Systems soft ware part:
The software of whole system is divided into four parts, the most automatically runs, Non-follow control, and parameter sets and helps.
Software operation is divided into two parts, the most manually and automatically.Time manually, can each switching value individually operated and analog quantity (safety interlock function as usual), be mainly used in when debugging and Iterim Change technique using.The design of software automatically part fully takes into account motility and the safety of user's technique, nitrogen replacement procedure for several times before and after devising.In technical process, reaction chamber temperature, each gas flow, chamber pressure etc. all keeps stable level, to ensure the stability of technique.
When program brings into operation, first pass around nitrogen displacement for several times, it is ensured that in reative cell, be completely filled with high pure nitrogen, evacuation the most again, starting each gas flow by arranging and be passed through process gas, vacuum pump works on simultaneously, and the pressure keeping reative cell is constant by setting value.After arriving the process time set, stop process gas, enter aerofluxus displacement, after displacement for several times, it is ensured that after substantially not having Residual process gas in reative cell, then inflated with nitrogen is to atmospheric pressure, provides the complete sound and light alarm of technique, reminds operator.
The parameters such as software parameter sets and includes: displacement number of times, each gas flow, etch period, reaction pressure, can arrange 10 groups of parameters, i.e. 10 set processes altogether.Helping interface is in-local description, is referred at any time to facilitate.
For ensureing that the water generated will not become liquid, take three measures:
1, etch chamber body temperature is higher than room temperature, controls at 40-70 DEG C.
2, in etching cavity, pressure is less than normal pressure, it is understood that air pressure is the lowest, water the most easily vaporizes.
3, the moisture participating in producing in etching of ethanol is combined into rapidly the conjugate of second alcohol and water by dehydrated alcohol steam, it is to avoid the individualism of water, thus avoids the condensation of water.
To sum up, described gas etching system uses anhydrous hydrogen fluoride steam (VHF) to combine dehydrated alcohol steam and performs etching, do not comprise water or steam, avoid in etching process owing to the effects such as the stress of water or surface tension cause device adhesion maybe may cause the phenomenon of structural breakdown, owing to taking the lithographic method of anhydrous hydrogen fluoride gas so that parts and deep chamber parts that etching structure is less become very easy；Owing to control system uses PLC and touch screen human-computer interface, the technological parameters such as accurate control temperature, flow, pressure, etching cavity plus particular design, even mechanism of qi structure and wafer rotating mechanism it is provided with in etching cavity, course of reaction can be efficiently controlled, improve etching homogeneity, keep higher selectivity simultaneously.
Claims (7)
- null1. the etching cavity for gaseous hydrogen fluoride etching silicon dioxide，It is characterized in that: described etching cavity (2) includes cavity main body (21)、Upper cover (22)、Trachea、Rotation platform (23)、Uniform flow pipe、Heater and even flow plate，The top of described cavity main body (21) uses upper cover (22) to seal，Cavity main body (21) is provided with air inlet and gas outlet，Described air inlet and gas outlet are positioned at the left and right sides of described cavity main body，Air inlet pipe (24) it is provided with in described air inlet，Escape pipe (25) it is provided with in gas outlet，The air inlet pipe (24) of cavity main body (21) inside is provided with air inlet uniform flow pipe (26)，The escape pipe (25) of cavity main body (21) inside is provided with uniform flow pipe (27) of giving vent to anger，The left side of described air inlet uniform flow pipe (26) is provided with air inlet even flow plate (28)，The described right side giving vent to anger uniform flow pipe (27) is provided with even flow plate of giving vent to anger (29)，It is provided with right heater (210) between described air inlet uniform flow pipe (26) and air inlet even flow plate (28)，Described giving vent to anger is provided with left heater (211) between uniform flow pipe (27) and even flow plate of giving vent to anger (29)，Interval is kept to arrange between air inlet even flow plate (28) and even flow plate of giving vent to anger (29)，Described rotation platform (23) is positioned between air inlet even flow plate (28) and even flow plate of giving vent to anger (29).
- Etching cavity for gaseous hydrogen fluoride etching silicon dioxide the most according to claim 1, it is characterised in that: described uniform flow pipe is T-shaped.
- Etching cavity for gaseous hydrogen fluoride etching silicon dioxide the most according to claim 1, it is characterised in that: described even flow plate is provided with passage.
- null4. the system for gaseous hydrogen fluoride etching silicon dioxide，It is characterized in that including: the etching cavity (2) as described in any one in claim 1-3、Gas generation apparatus (1) and control system (3)，Gas generation apparatus (1) is for the etching gas that will produce、It is interior to etching cavity (2) that nitrogen and alcohol gas carry out Mixed design，Described etching cavity (2) is provided with air inlet and gas outlet，Etching cavity is provided with rotation platform in (2)、Heater and gas flow-harmonization device，The mixed gas entering etching cavity (2) is sufficiently mixed by gas flow-harmonization device，Rotation platform is placed with semiconductor device to be etched on (23)，Control system (3) controls gas generation apparatus (1) and produces mixed gas，Mixed gas is sufficiently mixed in etching cavity (2)，Control system (3) control rotation platform rotates and controls heater and heats.
- System for gaseous hydrogen fluoride etching silicon dioxide the most according to claim 4, it is characterized in that: described etching system also includes vacuum pump (4) and exhaust gas processing device (5), the gas outlet of described etching cavity (2) is connected with the air inlet of exhaust gas processing device (5) by vacuum pump (4), control system controls vacuum pump and carries out air-breathing, is negative pressure state in making etching cavity (2).
- 6. according to the system for gaseous hydrogen fluoride etching silicon dioxide described in claim 4 or 5, it is characterized in that: described gas generating unit (1) includes fluohydric acid gas gas tank (11), nitrogen pot (12) and ethanol evaporating tank (13), the gas outlet of described fluohydric acid gas gas tank (11) air inlet through air relief valve (15) and effusion meter (14) with described etching cavity (2) successively is tightly connected；The gas outlet of described nitrogen pot (12) air inlet through air relief valve (15) and effusion meter (14) with described etching cavity (2) successively is tightly connected；Described ethanol evaporating tank (13) is tightly connected by the air inlet of effusion meter (14) and pipeline with described etching cavity (2).
- 7. according to the system for gaseous hydrogen fluoride etching silicon dioxide described in claim 4 or 5, it is characterised in that: described control system (3) uses PLC as controller.
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| CN107445136B (en) * | 2017-07-05 | 2019-04-19 | 中北大学 | Silicon Etching System Based on Vapor Phase TMAH |
| CN107393848B (en) * | 2017-07-12 | 2019-12-10 | 江苏鲁汶仪器有限公司 | High-tightness gas-phase corrosion cavity |
| CN107546145B (en) * | 2017-08-18 | 2020-12-29 | 清华大学 | Wafer in-situ inspection device, wafer carrier and wafer in-situ inspection method |
| CN112750738B (en) * | 2021-01-18 | 2024-02-23 | 中国电子科技集团公司第四十八研究所 | Ion beam etching equipment and etching method thereof |
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