CN104094091B - Semiconductor light-emitting elements determinator and semiconductor light-emitting elements assay method - Google Patents

Abstract

The present invention provides a measuring device for a semiconductor light-emitting element that can simultaneously measure the wavelength and luminous amount of light at various angles. The LED measurement device (3) has a photodetector (105) that receives light emitted by the LED (101) semiconductor light emitting element, a distance changing mechanism that can change the distance between the LED (101) and the photodetector (105), and A measurement section (120) capable of measuring the wavelength or intensity of light emitted by an LED (101) in one direction, wherein even if the distance between the LED (101) and the photodetector (105) is changed by a distance changing mechanism, the distance between the LED (101) and the photodetector (105) The measurement unit (120) also receives the light of the outermost peripheral line of the light received by the photodetector (105).

Description

Measuring device for semiconductor light emitting element and measuring method for semiconductor light emitting element

technical field

The present invention relates to a measurement device for measuring light from a semiconductor light-emitting element such as an LED, and a measurement method thereof.

Background technique

Patent Document 1 and Patent Document 2 disclose the technique of measuring one point at a time in order to measure the light intensity distribution (light distribution intensity distribution) corresponding to the light intensity corresponding to the angle formed by the central axis of light emission.

In addition, Patent Document 3 discloses a technique of simultaneously measuring a plurality of places in order to measure a light intensity distribution.

Furthermore, Patent Document 4 discloses a technique for measuring the total amount of light emission.

prior art literature

patent documents

[Patent Document 1] Japanese Patent Application Laid-Open No. 5-107107

[Patent Document 2] Japanese Patent Application Laid-Open No. 8-114498

[Patent Document 3] Japanese Patent Application Laid-Open No. 2005-172665

[Patent Document 4] Japanese Patent Document Laid-Open No. 2008-76126

Contents of the invention

The problem to be solved by the invention

None of the methods described in Patent Document 1 to Patent Document 4 can simultaneously measure the wavelength distribution of light at each angle and the amount of light emitted.

However, there is a need to simultaneously measure the wavelength (or light intensity) of light at each angle and the amount of light emitted at that angle.

the means needed to solve the problem

The present invention was made to solve the above problems, and one object of the present invention is to provide a measuring device for a semiconductor light-emitting element and a measuring method thereof capable of simultaneously measuring the wavelength of light at each angle and the amount of light emitted up to the angle.

In order to solve the above-mentioned problems, the measurement device for semiconductor light emitting elements of the present invention has: a light receiving unit having a light receiving surface for receiving light emitted by the semiconductor light emitting element; incident surface, and can measure the wavelength or intensity of light in one direction among the light emitted by the semiconductor light emitting element, it is characterized in that the measuring device for semiconductor light emitting element also has a distance changing mechanism, and the distance changing mechanism can change the The distance between the semiconductor light-emitting element and the light-receiving part; the measuring part moves to the light-emitting central axis passing through the light-emitting center of the semiconductor light-emitting element and connecting the light-emitting center axis as the distance changing mechanism changes the distance. In a state where the angle formed by the semiconductor light emitting element and the line at the outer peripheral end of the light receiving surface is at the same position as the angle formed by the light emitting central axis and the line connecting the semiconductor light emitting element and the measuring section, To measure.

And, in order to solve the above-mentioned problems, the method for measuring a semiconductor light emitting element of the present invention includes: a light receiving unit having a light receiving surface for receiving light emitted by the semiconductor light emitting element; The incident surface where the light enters, and can measure the wavelength or intensity of light in one direction of the light emitted by the semiconductor light emitting element, characterized in that the semiconductor light emitting element also has a distance changing mechanism, and the distance changing mechanism can changing the distance between the semiconductor light emitting element and the light receiving part; the measuring part is connected to the light emitting central axis passing through the light emitting center of the semiconductor light emitting element when the distance is changed by the distance changing mechanism; A state where the angle formed by the semiconductor light emitting element and the line connecting the semiconductor light emitting element and the outer peripheral end of the light receiving surface is the same as the angle formed by the central axis of light emission and the line connecting the semiconductor light emitting element and the measuring section Next, measure.

Description of drawings

FIG. 1 is an explanatory diagram of the light emission state of LEDs in the embodiment of the present invention.

FIG. 2 is an explanatory diagram regarding a light distribution intensity distribution E. FIG.

FIG. 3 is an explanatory diagram of a light receiving module of the measuring device for a light emitting element used for LED inspection in the embodiment.

FIG. 4 is a schematic explanatory diagram of the measurement device 3 for LEDs.

FIG. 5 is an explanatory diagram of a method of measuring the light distribution intensity E(θ) in the present embodiment.

Fig. 6 is an explanatory diagram regarding the angle of the incident surface when the light guide itself is inclined.

detailed description

Hereinafter, an embodiment of the present invention will be described in detail using FIG. 1 .

FIG. 1 is an explanatory diagram of the light emission state of LEDs in the embodiment of the present invention.

As shown in FIG. 1( a ), an LED (Light Emitting Diode) 101 emits light from a light emitting surface 1011 . The normal line of the light emitting surface 1011 of this LED101 is called light emission central axis LCA. In addition, when one direction on a plane including the light emitting surface 1011 is taken as a reference axis (X axis), an angle rotated counterclockwise from the X axis on the plane is defined as φ.

In addition, when φ is fixed, the angle formed with the light emission central axis LCA is defined as θ.

The intensity|strength of the light emitted from the light emission surface 1011 of LED101 differs by angle (theta) etc. which it forms with light emission central axis LCA (refer FIG. 2).

However, there is a need to measure the light emission status of LED101. The state of light emission means, for example, the state of light emission amount, wavelength, and distribution of light intensity (that is, light distribution intensity distribution).

Whether or not this LED 101 is suitable for various uses can be judged by knowing the light emitting conditions.

Moreover, when measuring the light emission condition of LED101, it is necessary to measure at high speed as much as possible.

The intensity of the light of LED101 shows a different value in different θ and φ.

Therefore, in order to express the intensity of light visually, a graph such as FIG. 1( b ) will be used for description.

In FIG. 1( b ), the intersection of the X axis and the Y axis is represented by θ=0°.

In addition, each point on the circle represents the position of each φ of θ=90°.

In addition, FIG. 1( c ) is a cross-sectional view at a position where the value of φ is constant.

Thus, in FIG. 1 , the intensity of light at a position at an angle θ with the light emission center axis LCA at the same distance from LED 101 is defined as light distribution intensity E(θ).

And, this light distribution intensity E(θ) illustrated corresponding to each θ is the light distribution intensity distribution E. FIG. A specific example of the light distribution intensity distribution E will be described with reference to FIG. 2 .

In addition, in the above description, LED101 can be regarded as one point assuming that measurement is performed at a position far enough away from LED101.

Unless otherwise stated in the following description, LED101 is assumed as one dot. This is because the LED 101 is extremely small compared with the general photodetector 105, so it can be assumed.

FIG. 2 is an explanatory diagram regarding a light distribution intensity distribution E. FIG.

Fig. 2(a) is the same figure as Fig. 1(c).

As shown in FIG. 2( a ), the light distribution intensity distribution E is the light intensity of each θ at a fixed φ angle at a position where the distance r from the LED 101 is constant.

Moreover, LED101 generally has the light distribution intensity distribution E which differs among LED101 by the error etc. of a manufacturing process.

This different LED101 may exist the cos-type LED101 of FIG.2(b) and the ring-type LED101 of FIG.2(c).

The cos-type and ring-type LED101 are just an example, and LED101 which has these two types of characteristics is not limited as a measurement object. However, generally, LED101 has the characteristic between the cos-type LED101 with the peak of light, and the ring-type LED101 which has the peak of the intensity of light at θ=30°. That is, the general LED101 which is an inspection object has a peak of light intensity in the range of (theta) 0 degree-30 degrees in many cases.

FIG. 3 is an explanatory diagram of the light receiving module 1 of the measurement device 3 for a light emitting element for inspecting the LED 101 in the embodiment.

More specifically, FIG. 3 shows the light received by the measuring device 3, which is a device capable of simultaneously measuring the total amount of light emitted by the LED 101 up to a predetermined angle and the wavelength (light intensity (light distribution intensity E(θ)) of the light at the predetermined angle. An illustration of Module 1.

The light receiving module 1 of FIG. 3 is used for obtaining data, and this data is used for measurement and inspection of LED101.

Hereinafter, the structure of the light receiving module 1 shown in FIG. 3 will be described.

As shown in FIG. 3 , in this embodiment, the light receiving module 1 has a stage 102b (sample setting stage), a photodetector 105 , a holder 107 , a signal line 111 , an amplifier 113 , a communication line 115 and a probe 109 .

In addition, the light receiving module 1 has a measurement unit 120 .

The measurement unit 120 has a light guide unit 117 , an optical fiber 119 , and a spectroscope 121 .

The light guide part 117 has the incident surface 117a, receives the light from LED101 at this incident surface 117a, and makes the light enter the inside of the light guide part 117. As shown in FIG.

The light incident from the incident surface 117 a is guided in a direction parallel to the longitudinal direction of the light guide portion 117 . In addition, a method of guiding light in the longitudinal direction of the light guide part 117 will be described in FIG. 6 .

The optical fiber 119 guides the light guided by the light guide 117 to the beam splitter 121 .

The spectrometer 121 measures at least one of the intensity of light or the wavelength of light.

In addition, all these structures are not essential structures of the light receiving module 1 , as long as it has at least the photodetector 105 and the light guide 117 .

Several LED101 is arrange|positioned on the mounting base 102b installed horizontally.

The holding part 107 is arrange|positioned at the position facing the stage 102b at intervals.

A photodetector 105 is disposed inside the holding portion 107 .

LED101, the stage 102b, and the photodetector 105 are mutually arrange|positioned in parallel.

The probe 109 is in contact with the electrode of LED101 at the time of light receiving condition measurement and electrical characteristic measurement, and applies voltage to LED101.

The probe 109 can be moved in the state which the stage 102b and LED101 were fixed, and the probe 109 can be brought into contact with LED101. On the contrary, you may move the stage 102b and LED101 in the state which fixed the probe 109, and may make the probe 109 and LED101 contact.

In addition, the probe 109 is connected to the electrical characteristic measurement unit 125 .

The probe needles 109 are substantially parallel to the light emitting surface 1011 of the LED 101 and radially extend in a direction perpendicular to the normal of the LED 101 .

The holder 107 has a cylindrical side surface 107b.

The side surface portion 107b has a cylindrical shape and has a shape extending in the direction of θ=0°.

The center of the shielding part 107a and the side part 107b has a direction of θ=0°, which is the same as the central axis of light emission of the light emitting surface 1011 of the LED101.

The photodetector 105 is arranged in the hollow space formed by the inner peripheral surface of the side surface portion 107b.

A circular opening portion 107c having a cylindrical hollow portion is formed in a central portion of the blocking portion 107a. Due to the existence of this circular opening 107c, the photodetector 105 can receive the light emitted from the LED101.

The diaphragm 102c arrange|positioned on the stage 102b is arrange|positioned with some LED101.

In addition, in this embodiment, the purpose of arranging a plurality of LEDs 101 on the diaphragm 102c is to obtain the total amount of light emitted at a predetermined angle and the wavelength (intensity) of light at the predetermined angle at high speed (simultaneously) and with high accuracy.

The photodetector 105 (holding part 107) can move to the direction G which approaches LED101, and the direction F which separates from LED101.

However, you may move LED101 (stage 102b) without moving photodetector 105.

The mechanism which moves this photodetector 105 or LED101 and changes the distance between the photodetector 105 and LED101 is called a distance change mechanism.

The incident surface 117a of the light guide part 117 is kept equidistant from LED101 of measurement object by a holding|maintenance part.

In addition, the holding part can rotatably hold the light guide part 117 .

Specifically, the holding unit can move the light guide unit 117 in the direction A on the side of θ=90°, or move the light guide unit 117 in the direction B on the side of θ=0°.

In addition, the holding part can rotate the light guide part 117 in the clockwise direction C, and can also rotate the light guide part 117 in the counterclockwise direction D. FIG.

Although this holding|maintenance part is not shown in figure, what is necessary is just a mechanism which can maintain the incident surface 117a and LED101 of a measurement object at equal distance, and can hold the incident surface 117a rotatably.

In addition, in FIG. 3 , the light guide part 117 is arranged at a position different from the outermost peripheral line L of the light received by the photodetector 105. However, as described below, it is preferable that the light guide part 117 be arranged on the outermost peripheral line L. on line L.

As shown in FIG. 3, several LED101 is arrange|positioned on the diaphragm 102c. When a plurality of LED101 is arrange|positioned in this way, it will be requested|required to measure the said some LED101 at high speed as much as possible.

In this embodiment, in addition to the movement of the photodetector 105, by moving and rotating the light guide 117, the total amount of light emitted at a predetermined angle and the wavelength of light at a predetermined angle (light intensity (light distribution intensity) can be simultaneously measured. E(θ)).

Therefore, various measurements of LED101 can be performed continuously and at high speed.

FIG. 4 is a schematic explanatory diagram of the measuring device 3 for LED101.

The measurement device 3 of the LED 101 has an electrical characteristic measurement unit 125 , a storage unit 161 , an output unit 163 , and a calculation unit 151 in addition to the light receiving module 1 .

In addition, in this embodiment, the light receiving module 1 has a stage 102b (sample setting stage), a photodetector 105 , a holder 107 , a signal line 111 , an amplifier 113 , a communication line 115 , an optical fiber 119 , and a beam splitter 121 .

However, all these structures are not necessarily the structure of the measuring device 3 of LED101, What is necessary is just to have the photodetector 105, the optical fiber 119, and the spectroscope 121 at least.

Electrical characteristic measurement unit 125 has HV unit 153 , ESD unit 155 , switching unit 157 , and positioning unit 159 .

Photodetector 105 receives light emitted from LED 101 .

Then, an electrical signal (received light amount information) output based on the sum of all the intensities of the light received by the photodetector 105 is output to the amplifier 113 as an analog signal.

The light distribution intensity distribution can be calculated using the received light amount information output by the photodetector 105 .

The amplifier 113 amplifies the received light amount information and converts it into a voltage value detectable by the calculation unit 151 described later.

Further, the optical fiber 119 is connected to a spectroscope 121 capable of measuring the wavelength and intensity of the guided light (light distribution intensity E(θ)).

Further, the spectroscope 121 outputs information on the wavelength of light and the light distribution intensity E(θ) to the calculation unit 151 .

The probe 109 has a function which physically contacts the surface of LED101, and applies the voltage for making LED101 emit light.

In addition, the probe 109 is positioned and fixed by the positioning unit 159 .

If the stage 102b is a moving object, the positioning unit 159 has the function of keeping the tip of the probe 109 at a fixed position. Conversely, if the probe 109 is a moving object, the positioning unit 159 has a function of moving the tip of the probe 109 to a predetermined position on the stage 102b on which the LED 101 is placed, and holding it there.

The HV unit 153 has a role of applying a rated voltage and detecting various characteristics of the LED 101 with respect to the rated voltage.

Normally, the photodetector 105 measures the light emitted from the LED 101 in a state where a voltage from the HV unit 153 is applied.

Various types of characteristic information detected by the HV unit 153 are output to the calculation unit 151 .

The ESD unit 155 is a unit for momentarily applying a high voltage to the LED 101 to discharge static electricity, and to perform inspections such as whether or not the LED is damaged by static electricity.

The electrostatic breakdown information detected by the ESD unit 155 is output to the computing unit 151 .

The switching unit 157 performs switching between the HV unit 153 and the ESD unit 155 .

That is, the switching unit 157 changes the voltage applied to the LED 101 via the probe 109 . And according to this change, the inspection item of LED101 is changed, respectively, to detection of various characteristics at a rated voltage, or detection of electrostatic destruction.

The calculation unit 151 receives the voltage output from the amplifier 113, information on the wavelength and light distribution intensity of the light from the beam splitter 121, various electrical characteristic information detected by the HV unit 153, and electrostatic destruction information detected by the ESD unit 155. input of.

And the calculation part 151 analyzes and classifies the characteristic of LED101 based on these inputs.

FIG. 5 is an explanatory diagram of a method of measuring the light distribution intensity E(θ) in the present embodiment.

As shown in FIG. 5( a ), the distance between the photodetector 105 and the LED 101 is defined as LA, and the wavelength and light distribution intensity E(θC) of light are measured at the position of θ=θC.

Moreover, FIG.5(b) has shown that the photodetector 105 is moved to the LED101 side by the distance change mechanism.

In this case, the distance between the photodetector 105 and LED101 is defined as LB, and the wavelength and light distribution intensity E(θD) of light are measured at the position of θ=θD.

Moreover, the holding|maintenance part holds the light guide part 117 so that the distance between the incident surface 117a and LED101 may be fixed regardless of the distance of the photodetector 105.

Here, the reason why the distance between the incident surface 117a and LED101 is fixed is demonstrated. Since the light distribution intensity E(θ) is the intensity of light at a point at the same distance from LED101, it is necessary to measure the intensity of light at the same distance from LED101. However, as long as the distance can be corrected, the distance between the incident surface 117 a and the LED 101 does not necessarily have to be fixed.

In addition, the holding portion holds the light guide portion 117 at a position where it does not affect the light received by the photodetector 105 .

Specifically, in FIG. 5( a ), the light guide 117 is moved so that θC=θA. In FIG. 5( b ), the light guide 117 is moved so that θD=θB.

That is, the light guide part 117 is moved to the position of the outermost peripheral line L. FIG.

In this case, the wavelength of light (or the intensity of light) at θA or θB can be measured while measuring the light emission amount.

In addition, although it is suspected whether the existence of the light guide part 117 will adversely affect the measurement results of the photodetector 105, it is doubtful, but since the light guide part 117 (especially the tip) is thin, it will hardly affect the photodetector 105. affected by light.

In addition, the light guide part 117 also rotates with the holding part. A specific rotation angle will be described with reference to FIG. 6 .

FIG. 6 is an explanatory diagram regarding the angle of the incident surface 117 a when the light guide 117 itself is inclined.

What is shown in FIG. 6 is the case where the light guide part 117 is only inclined by θ4 with respect to the horizontal.

In this case, in order to make the light incident on the incident surface 117a advance in the extending direction (light guiding direction) of the light guiding part 117, the following formula must be satisfied:

Sin(90°-θ3+θ2-θ4)=nsin(θ2).

Here, n is the relative refractive index of the light guide part 117 with respect to air.

As long as the angle θ2 of the incident surface 117a that satisfies this formula, the angle θ3 that is the angle of the incident surface 117a with respect to the normal line of the LED 101, and the angle θ4 that the light guide 117 is inclined relative to the horizontal are selected, the light guided by the light guide 117 The light can travel straight in the direction in which the light guide 117 extends.

Furthermore, since the light guided by the light guide part 117 is guided straightly, the incident light can be reliably guided to the beam splitter 121 .

That is, the wavelength (intensity) of the light at (theta) 3 emitted from LED101 can be measured with higher precision.

Preferably, APC (Angle Physical Contact) grinding is performed on the incident surface 117a.

Here, the so-called APC polishing is a polishing method in which an inclined-convex spherical polishing surface is applied. Attenuation of reflection can be suppressed by this APC polishing.

<Structure and effect of the embodiment>

Measuring device 3 for LED101 has a photodetector 105 that receives the light emitted by LED101 semiconductor light emitting element, a distance changing mechanism that can change the distance between LED101 and photodetector 105, and one of the light emitted by LED101 can be measured. The measuring section 120 of the wavelength or intensity of light in the direction.

Even if the distance between LED101 and photodetector 105 is changed by the distance changing mechanism, measurement unit 120 receives the light of the outermost peripheral line of the light received by photodetector 105 .

With such a structure, it is possible to simultaneously measure the wavelength of light at each angle and the amount of light emitted at the angle position.

The measurement part 120 has the incident surface 117a into which the light emitted by LED101 enters. Even if the distance between LED101 and the photodetector 105 is changed by the distance changing mechanism, the measurement part 120 does not change the distance between LED101 and the incident surface 117a. Incident surface 117a rotates as the distance between LED101 and photodetector 105 is changed by the distance changing mechanism.

With such a structure, the wavelength of light at each angle can be measured more reliably.

The measurement part 120 can move equidistantly centering on LED101.

With such a structure, light distribution intensity E(θ), which is the intensity of light at equal distances, can be easily obtained.

The measuring unit 120 is rotated to an angle at which the incident light is refracted in a direction in which the light incident on the incident surface 117 a is guided.

With such a configuration, the measurement unit 120 can measure the intensity of light (light distribution intensity E(θ)) and/or the wavelength of light with higher accuracy.

The measuring unit 120 is arranged outside the range of light received by the photodetector 105 .

With such a configuration, the measurement unit 120 can perform measurement without affecting the measurement performed by the photodetector 105 .

LED101 is wafer-shaped LED101.

With such a structure, high-speed and continuous measurement is possible.

<definition etc.>

The distance changing mechanism in the present invention may be moved toward the photodetector 105 side, or may be moved toward the LED 101 side.

In addition, the photodetector 105 in embodiment is an example of the light receiving part in this invention. That is, the light receiving unit in the present invention may be any mechanism as long as it can measure the intensity of light.

In addition, LED101 is an example of the semiconductor light emitting element in this invention. That is, the so-called semiconductor light emitting element should just be an element that emits light. Here, the light is not limited to visible light, and may be, for example, infrared rays, ultraviolet rays, or the like.

The light emitting central axis LCA in the present invention refers to an axis that becomes the center of light when the semiconductor light emitting element emits light.

An example of the calculation unit in the present invention is the calculation unit 151 in the embodiment.

Symbol Description

1 light receiving module

3 Measuring device

101 LED (semiconductor light emitting element)

102b carrying platform

105 Photodetector (light receiving part)

151 Computing Department

Claims (7)

1. a semiconductor light-emitting elements determinator, it has:

Light accepting part, it has the sensitive surface receiving the light that semiconductor light-emitting elements is launched；And

Determination part, it has the plane of incidence that the light allowing described semiconductor light-emitting elements launch is injected, and can measure described half The wavelength of light in a direction or intensity among the light that conductor light-emitting component is launched,

It is characterized in that,

Described semiconductor light-emitting elements determinator also has distance change mechanism, and this distance change mechanism can change described Distance between semiconductor light-emitting elements and described light accepting part；

Described determination part passes through described semiconductor light emitting element mobile to along with the described distance change mechanism described distance of change The line institute of the centre of luminescence axle of the centre of luminescence of part and the peripheral end being connected described semiconductor light-emitting elements and described sensitive surface The angle that the angle formed and described centre of luminescence axle are formed with the line being connected described semiconductor light-emitting elements and described determination part Under the state spending identical position, it is measured.

Semiconductor light-emitting elements determinator the most according to claim 1, it is characterised in that

Described determination part mobile to along with described distance change mechanism change described distance and described semiconductor light-emitting elements with It is measured under the state of the position that distance between described determination part is constant.

Semiconductor light-emitting elements determinator the most according to claim 1 and 2, it is characterised in that

Described determination part can move centered by described semiconductor light-emitting elements equidistantly.

Semiconductor light-emitting elements determinator the most according to claim 3, it is characterised in that

Described determination part has the plane of incidence that the light allowing described semiconductor light-emitting elements launch is injected,

Described determination part edge is inducted into the direction of the light being incident upon the described plane of incidence, rotates to make the angle of refracting light incident.

Semiconductor light-emitting elements determinator the most according to claim 1 and 2, it is characterised in that

Described determination part is configured at outside the scope of the light that described light accepting part is received.

Semiconductor light-emitting elements determinator the most according to claim 1 and 2, it is characterised in that

Described semiconductor light-emitting elements is the LED in wafer-shaped.

7. a semiconductor light-emitting elements assay method, wherein, described semiconductor light-emitting elements has:

Light accepting part, it has the sensitive surface receiving the light that semiconductor light-emitting elements is launched；And

Determination part, it has the plane of incidence that the light allowing described semiconductor light-emitting elements launch is injected, and can measure described half The wavelength of light in a direction or intensity among the light that conductor light-emitting component is launched,

It is characterized in that,

Described semiconductor light-emitting elements also has distance change mechanism, and this distance change mechanism can change described semiconductor light emitting Distance between element and described light accepting part；

Described determination part passes through described semiconductor light emitting element mobile to along with the described distance change mechanism described distance of change The line institute of the centre of luminescence axle of the centre of luminescence of part and the peripheral end being connected described semiconductor light-emitting elements and described sensitive surface The angle that the angle formed and described centre of luminescence axle are formed with the line being connected described semiconductor light-emitting elements and described determination part Under the state spending identical position, it is measured.