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CN104091901A - A kind of OLED preparation method - Google Patents

A kind of OLED preparation method Download PDF

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Publication number
CN104091901A
CN104091901A CN201410288714.7A CN201410288714A CN104091901A CN 104091901 A CN104091901 A CN 104091901A CN 201410288714 A CN201410288714 A CN 201410288714A CN 104091901 A CN104091901 A CN 104091901A
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particle
defect
organic
substrate
organic material
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吴海东
马群
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to CN201410288714.7A priority Critical patent/CN104091901A/en
Priority to PCT/CN2014/087905 priority patent/WO2015196612A1/en
Publication of CN104091901A publication Critical patent/CN104091901A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/861Repairing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00Climate change mitigation technologies for sector-wide applications
    • Y02P80/30Reducing waste in manufacturing processes; Calculations of released waste quantities

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention relates to the technical field of display, and discloses an OLED preparation method. The OLED preparation method comprises steps as follows: multiple layers of organic films are evaporated sequentially, wherein particle defect information on a substrate is detected after one layer of organic film is evaporated and before a next layer of organic film is evaporated; and a particle defect is repaired by a defect repair process when detected. According to the OLED preparation method, a process link of detecting particle defect information on the substrate after one layer of organic film is evaporated and before a next layer of organic film is evaporated is added, the particle defect is immediately repaired when detected and can be found and repaired timely in the forming process of the multiple layers of organic films, so that the waste of organic materials is reduced.

Description

一种OLED制备方法A kind of OLED preparation method

技术领域technical field

本发明涉及显示技术领域,特别涉及一种OLED制备方法。The invention relates to the field of display technology, in particular to an OLED preparation method.

背景技术Background technique

目前,彩色OLED显示器件像素区的空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)、阴极(Cathode)等,都是采用真空蒸镀工艺来成膜。尽管在蒸镀前,会先对蒸镀腔体进行抽真空,仍然无法实现蒸镀腔体的100%洁净。在蒸镀过程中,若有颗粒(Particle)落到有机薄膜上,就会出现缺陷。由于颗粒的存在,可能会引起短路情况的发生,并导致黑点的出现,使得器件的寿命和效率降低;并且,由于颗粒的存在,使得后续的蒸镀薄膜出现凸起物,出现尖端放电现象,导致器件寿命和效率降低。At present, the hole injection layer (HIL), hole transport layer (HTL), light emitting layer (EML), electron transport layer (ETL) and cathode (Cathode) in the pixel area of color OLED display devices are all vacuum evaporated. process to form a film. Although the evaporation chamber is first vacuumed before evaporation, it is still impossible to achieve 100% cleanliness of the evaporation chamber. During the evaporation process, if particles fall on the organic film, defects will appear. Due to the existence of particles, it may cause a short circuit and lead to the appearance of black spots, which reduces the life and efficiency of the device; and, due to the existence of particles, the subsequent evaporation film will have bumps and a tip discharge phenomenon. , resulting in reduced device lifetime and efficiency.

现有显示器件的制备过程中,在每一层有机材料的真空蒸镀过程中,并未检测是否存在颗粒缺陷的问题。因此,只有在OLED显示器件发生不良时,通过不良分析来发现颗粒缺陷。然而,这时的颗粒已经被深埋在薄膜内部,已经无法再对其进行修复,只能通过清洗液清洗掉蒸镀到玻璃基板上的有机薄膜,重新进行有机材料的真空蒸镀工艺,这种修复方法会导致有机材料的浪费。In the manufacturing process of the existing display device, during the vacuum evaporation process of each layer of organic material, the problem of particle defects is not detected. Therefore, only when the OLED display device is defective, particle defects can be found through defective analysis. However, at this time, the particles have been deeply buried in the film, and it can no longer be repaired. The organic film deposited on the glass substrate can only be cleaned with a cleaning solution, and the vacuum evaporation process of the organic material is carried out again. This restoration method results in a waste of organic material.

发明内容Contents of the invention

本发明提供了一种OLED制备方法,此种OLED制备方法可以避免有机材料的浪费。The invention provides an OLED preparation method, which can avoid the waste of organic materials.

为达到上述目的,本发明提供以下技术方案:To achieve the above object, the present invention provides the following technical solutions:

一种OLED制备方法,包括以下步骤:A kind of OLED preparation method, comprises the following steps:

依次蒸镀多层有机薄膜,其中:Sequentially vapor-deposit multi-layer organic films, in which:

在蒸镀一层有机薄膜之后和进行蒸镀下一层有机薄膜之前,包括:After evaporating one layer of organic film and before evaporating the next layer of organic film, including:

检测基板上的颗粒缺陷信息;Detect particle defect information on the substrate;

当检测到颗粒缺陷存在时,通过缺陷修复工艺修复所述颗粒缺陷。When the presence of particle defects is detected, the particle defects are repaired through a defect repair process.

以上OLED制备方法,在蒸镀一层有机薄膜之后和进行蒸镀下一层有机薄膜之前,增加检测基板上的颗粒缺陷信息的工艺环节,当检测到颗粒缺陷存在时,立即进行修复,能够在多层有机薄膜的形成过程中及时发现并修复颗粒缺陷,从而减少有机材料的浪费。In the above OLED preparation method, after evaporating one layer of organic film and before evaporating the next layer of organic film, the process link of detecting particle defect information on the substrate is added. When particle defects are detected, they can be repaired immediately, which can Particle defects are detected and repaired in time during the formation of multilayer organic thin films, thereby reducing the waste of organic materials.

较佳的实施例中,In a preferred embodiment,

当颗粒缺陷处的颗粒位于有机薄膜的表面时,所述缺陷修复工艺为采用激光工艺去除所述颗粒缺陷中的颗粒;When the particles at the particle defect are located on the surface of the organic film, the defect repair process is to use a laser process to remove the particles in the particle defect;

当颗粒缺陷处的颗粒部分嵌入有机薄膜时,所述缺陷修复工艺为:When the particles at the particle defects are partially embedded in the organic film, the defect repair process is:

采用激光工艺去除所述颗粒缺陷中的颗粒;using a laser process to remove particles in the particle defects;

通过研磨使有机薄膜表面平坦;Flatten the surface of the organic film by grinding;

或者,所述缺陷修复工艺为:Alternatively, the defect repair process is:

采用激光工艺去除所述颗粒缺陷中的颗粒;using a laser process to remove particles in the particle defects;

在颗粒缺陷处滴入熔化的有机材料,并使熔化的有机材料冷却;Dropping molten organic material at particle defects and allowing the molten organic material to cool;

通过研磨使有机薄膜表面平坦;Flatten the surface of the organic film by grinding;

当颗粒缺陷处的颗粒全部嵌入有机薄膜时,所述缺陷修复工艺为:When the particles at particle defects are all embedded in the organic film, the defect repair process is:

采用激光工艺去除所述颗粒缺陷中的颗粒;using a laser process to remove particles in the particle defects;

在颗粒缺陷处滴入熔化的有机材料,并使熔化的有机材料冷却;Dropping molten organic material at particle defects and allowing the molten organic material to cool;

通过研磨使有机薄膜表面平坦。The surface of the organic thin film is made flat by grinding.

较佳的实施例中,当所述缺陷修复工艺中包括在颗粒缺陷处滴入熔化的有机材料时,所述在颗粒缺陷处滴入熔化的有机材料中的有机材料与蒸镀的有机薄膜的材料相同。In a preferred embodiment, when the defect repairing process includes dropping molten organic material at the particle defect, the organic material in the molten organic material dropped at the particle defect and the vapor-deposited organic film The material is the same.

较佳的实施例中,当所述颗粒缺陷修复工艺中包括在缺陷处滴入熔化的有机材料时,所述在颗粒缺陷处滴入熔化的有机材料,具体包括:In a preferred embodiment, when the particle defect repairing process includes dropping molten organic material at the defect, the dropping of the molten organic material at the particle defect specifically includes:

通过显微镜观察并将喷嘴移动至颗粒缺陷区域上方,然后滴入熔化的有机材料。Look through the microscope and move the nozzle over the particle defect area, then drop the molten organic material.

较佳的实施例中,当所述缺陷修复工艺中包括通过研磨使有机薄膜表面平坦时,所述通过研磨使有机薄膜表面平坦,具体包括:In a preferred embodiment, when the defect repairing process includes smoothing the surface of the organic film by grinding, the smoothing of the surface of the organic film by grinding specifically includes:

通过显微镜观察并移动研磨头至颗粒缺陷区域,然后对有机材料进行研磨直至有机薄膜表面平坦。Observe through a microscope and move the grinding head to the particle defect area, and then grind the organic material until the surface of the organic film is flat.

较佳的实施例中,所述检测基板上的颗粒缺陷信息,具体包括:In a preferred embodiment, the detection of particle defect information on the substrate specifically includes:

通过显微镜对基板进行观察,确定基板上的颗粒缺陷信息。The substrate is observed through a microscope to determine particle defect information on the substrate.

较佳的实施例中,在所述依次蒸镀多层有机薄膜之前,还包括步骤:In a preferred embodiment, before said sequentially vapor-depositing multi-layer organic thin films, further steps are included:

对衬底基板进行清洗和等离子处理。The substrate substrate is cleaned and plasma treated.

较佳的实施例中,在所述依次蒸镀多层有机薄膜之后,还包括步骤:In a preferred embodiment, after the sequential vapor deposition of multi-layer organic films, further steps are included:

检测基板上的颗粒缺陷信息;Detect particle defect information on the substrate;

当检测到颗粒缺陷存在时,通过缺陷修复工艺修复所述颗粒缺陷。When the presence of particle defects is detected, the particle defects are repaired through a defect repair process.

较佳的实施例中,在所述依次蒸镀多层有机薄膜并且检测基板上的颗粒缺陷信息之后,还包括步骤:In a preferred embodiment, after sequentially evaporating multiple layers of organic thin films and detecting particle defect information on the substrate, further steps are included:

形成金属阴极层,并通过构图工艺形成金属阴极图形;Forming a metal cathode layer and forming a metal cathode pattern through a patterning process;

在金属阴极层上形成光取出层;forming a light extraction layer on the metal cathode layer;

封装基板。package substrate.

附图说明Description of drawings

图1为本发明实施例提供的一种OLED制备方法流程图;Fig. 1 is a flow chart of an OLED preparation method provided by an embodiment of the present invention;

图2a为本发明实施例提供的一种OLED制备方法中颗粒位于有机薄膜表面的基板结构示意图;Fig. 2a is a schematic diagram of a substrate structure in which particles are located on the surface of an organic thin film in an OLED preparation method provided by an embodiment of the present invention;

图2b为本发明实施例提供的一种OLED制备方法中采用激光工艺去除颗粒后的基板结构示意图;Fig. 2b is a schematic diagram of the structure of the substrate after removing particles by laser technology in an OLED preparation method provided by an embodiment of the present invention;

图3a为本发明实施例提供的另一种OLED制备方法中颗粒部分嵌入有机薄膜表面的基板结构示意图;Fig. 3a is a schematic diagram of a substrate structure in which particles are partially embedded in the surface of an organic thin film in another OLED preparation method provided by an embodiment of the present invention;

图3b为本发明实施例提供的另一种OLED制备方法中采用激光工艺去除颗粒后的基板结构示意图;Fig. 3b is a schematic diagram of the substrate structure after particle removal by laser process in another OLED preparation method provided by the embodiment of the present invention;

图3c为本发明实施例提供的另一种OLED制备方法中滴入熔化的有机材料后的基板结构示意图;Fig. 3c is a schematic diagram of the structure of the substrate after dropping molten organic materials in another OLED preparation method provided by the embodiment of the present invention;

图3d为本发明实施例提供的另一种OLED制备方法中经过研磨后的基板结构示意图;Fig. 3d is a schematic diagram of the substrate structure after grinding in another OLED preparation method provided by the embodiment of the present invention;

图4a为本发明实施例提供的另一种OLED制备方法中颗粒全部嵌入有机薄膜内部的基板结构示意图;Fig. 4a is a schematic diagram of a substrate structure in which all particles are embedded in an organic thin film in another OLED preparation method provided by an embodiment of the present invention;

图4b为本发明实施例提供的另一种OLED制备方法中采用激光工艺去除颗粒后的基板结构示意图;Fig. 4b is a schematic diagram of the substrate structure after particle removal by laser process in another OLED preparation method provided by the embodiment of the present invention;

图4c为本发明实施例提供的另一种OLED制备方法中滴入熔化的有机材料后的基板结构示意图;Fig. 4c is a schematic diagram of the substrate structure after dropping molten organic materials in another OLED preparation method provided by the embodiment of the present invention;

图4d为本发明实施例提供的另一种OLED制备方法中经过研磨后的基板结构示意图。Fig. 4d is a schematic diagram of a substrate structure after grinding in another OLED manufacturing method provided by an embodiment of the present invention.

具体实施方式Detailed ways

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

请参考图1,图2a和图2b。Please refer to Figure 1, Figure 2a and Figure 2b.

如图1所示,本发明实施例提供的OLED制备方法,包括以下步骤:As shown in Figure 1, the OLED preparation method provided by the embodiment of the present invention includes the following steps:

依次蒸镀多层有机薄膜,其中:Sequentially vapor-deposit multi-layer organic films, in which:

以图1所示的步骤S101和步骤S104为例,步骤S101和步骤S104均为蒸镀一层有机薄膜,在步骤S101中蒸镀一层有机薄膜之后和步骤S104中进行蒸镀下一层有机薄膜之前,包括:Taking step S101 and step S104 shown in Figure 1 as an example, both step S101 and step S104 are to vapor-deposit an organic thin film, and after vapor-depositing an organic thin film in step S101 and in step S104, vapor-deposit the next layer of organic thin film. Before film, include:

步骤S102,检测基板上的颗粒缺陷信息;Step S102, detecting particle defect information on the substrate;

步骤S103,当检测到颗粒缺陷存在时,通过缺陷修复工艺修复颗粒缺陷。Step S103, when it is detected that the particle defect exists, the particle defect is repaired through a defect repairing process.

如图2a和图2b所示,在步骤S101中蒸镀有机薄膜12之后和步骤S104中进行蒸镀下一层有机薄膜之前,步骤S102,进行检测基板上的颗粒缺陷13信息,步骤S103,当检测到颗粒缺陷13存在时,通过缺陷修复工艺修复颗粒缺陷13。As shown in Figure 2a and Figure 2b, after evaporating the organic film 12 in step S101 and before evaporating the next layer of organic film in step S104, step S102 is to detect the particle defect 13 information on the substrate, step S103, when When the particle defect 13 is detected, the particle defect 13 is repaired through a defect repair process.

以上OLED制备方法,在步骤S101中蒸镀一层有机薄膜12之后和步骤S104中进行蒸镀下一层有机薄膜之前,增加步骤S102以检测基板上的颗粒缺陷13信息,当进行了步骤S101之后的基板上不存在颗粒缺陷13时,直接进行步骤S104进行下一层有机薄膜的蒸镀;当步骤S102检测到基板上存在颗粒缺陷13时,执行步骤S103对颗粒缺陷13进行修复。In the above OLED preparation method, step S102 is added to detect particle defect 13 information on the substrate after vapor-depositing one layer of organic film 12 in step S101 and before vapor-depositing the next layer of organic film in step S104. After step S101 is carried out When there is no particle defect 13 on the substrate, proceed directly to step S104 to vapor-deposit the next layer of organic thin film; when step S102 detects the presence of particle defect 13 on the substrate, perform step S103 to repair the particle defect 13.

所以,上述OLED制备方法中,能够在多层有机薄膜的形成过程中及时发现并修复颗粒缺陷13,相对于上述背景技术而言,能够减少必须重新蒸镀有机薄膜才能对OLED进行修复现象的发生,从而减少有机材料的浪费。Therefore, in the above-mentioned OLED preparation method, particle defects 13 can be found and repaired in time during the formation of multilayer organic thin films. Compared with the above-mentioned background technology, it can reduce the phenomenon that the OLED must be re-evaporated to repair the organic thin film. , thereby reducing the waste of organic materials.

以下请参考图1,图2a,图2b,图3a,图3b,图3c,图3d,图4a,图4b,图4c,图4d。Please refer to Figure 1, Figure 2a, Figure 2b, Figure 3a, Figure 3b, Figure 3c, Figure 3d, Figure 4a, Figure 4b, Figure 4c, Figure 4d below.

如图1,图2a,图2b,图3a,图3b,图3c,图3d,图4a,图4b,图4c,图4d所示。As shown in Figure 1, Figure 2a, Figure 2b, Figure 3a, Figure 3b, Figure 3c, Figure 3d, Figure 4a, Figure 4b, Figure 4c, Figure 4d.

一种具体的实施例中,步骤S103有以下几种实施方式:In a specific embodiment, step S103 has the following several implementation modes:

方式一,通过高倍显微镜进行观察,当颗粒缺陷13处的颗粒位于有机薄膜12的表面时,如图2a所示,则步骤S103中的缺陷修复工艺为直接利用激光打掉颗粒,使有机薄膜12表面平坦,修复完成,如图2b所示。其中,有机薄膜12可以直接设置于衬底基板11上,衬底基板11可以选用玻璃、石英、蓝宝石、塑料等透明材质;或者,有机薄膜12可以间接设置于衬底基板11上,即有机薄膜12和衬底基板11之间还可以形成其它结构膜层,本发明不做限制。Method 1, observe through a high-power microscope, when the particles at the particle defect 13 are located on the surface of the organic film 12, as shown in Figure 2a, the defect repair process in step S103 is to directly use the laser to destroy the particles, so that the organic film 12 The surface is flat and the repair is complete, as shown in Figure 2b. Wherein, the organic thin film 12 can be directly arranged on the substrate 11, and the substrate 11 can be made of transparent materials such as glass, quartz, sapphire, plastic; or, the organic thin film 12 can be indirectly arranged on the substrate 11, that is, the organic thin film Other structural film layers may also be formed between 12 and the base substrate 11, which is not limited in the present invention.

方式二,通过高倍显微镜进行观察,当颗粒缺陷23处的颗粒部分嵌入有机薄膜22时,如图3a所示,步骤S103中的缺陷修复工艺为:首先利用激光打掉颗粒,此时,颗粒缺陷23处会出现凹槽231,如图3b所示;如果颗粒缺陷23处出现的凹槽231很浅,则直接通过研磨使有机薄膜22表面平坦,完成修复;如果颗粒缺陷23处出现的凹槽231很深,则首先在颗粒缺陷23处的凹槽231内滴入熔化的有机材料,如图3c所示,此有机材料与蒸镀所用有机材料为同一物质;然后,待有机材料冷却后再进行研磨,使有机薄膜22表面平坦,完成修复,如图3d所示。其中,有机薄膜22可以直接设置于衬底基板21上,衬底基板21可以选用玻璃、石英、蓝宝石、塑料等透明材质;或者,有机薄膜22可以间接设置于衬底基板21上,即有机薄膜22和衬底基板21之间还可以形成其它结构膜层,本发明不做限制。The second way is to observe through a high-power microscope. When the particles at the particle defect 23 are partially embedded in the organic film 22, as shown in FIG. A groove 231 will appear at 23 places, as shown in Figure 3b; if the groove 231 appearing at the particle defect 23 place is very shallow, then directly make the surface of the organic film 22 flat by grinding to complete the repair; if the groove appearing at the particle defect 23 place 231 is very deep, then first drop molten organic material into the groove 231 at the particle defect 23, as shown in Figure 3c, this organic material is the same substance as the organic material used for evaporation; then, after the organic material is cooled, Grinding is performed to make the surface of the organic thin film 22 flat, and the restoration is completed, as shown in FIG. 3d. Wherein, the organic thin film 22 can be directly arranged on the base substrate 21, and the base substrate 21 can be selected from transparent materials such as glass, quartz, sapphire, plastic; or, the organic thin film 22 can be indirectly arranged on the base substrate 21, that is, the organic thin film Other structural film layers may also be formed between 22 and the base substrate 21, which is not limited in the present invention.

方式三,通过高倍显微镜进行观察,当颗粒缺陷33处的颗粒全部嵌入有机薄膜32时,如图4a所示,步骤S103中的缺陷修复工艺为:首先利用激光打掉颗粒,此时,在颗粒缺陷33处会出现很深的凹槽331,如图4b所示;然后在颗粒缺陷33处的凹槽331内滴入熔化的有机材料,如图4c所示,此有机材料与蒸镀所用有机材料为同一物质;待有机材料冷却后再进行研磨,使有机薄膜32表面平坦,完成修复,如图4d所示。其中,有机薄膜32可以直接设置于衬底基板31上,衬底基板31可以选用玻璃、石英、蓝宝石、塑料等透明材质;或者,有机薄膜32可以间接设置于衬底基板31上,即有机薄膜32和衬底基板31之间还可以形成其它结构膜层,本发明不做限制。Method 3: Observe through a high-power microscope. When all the particles at the particle defect 33 are embedded in the organic film 32, as shown in FIG. A deep groove 331 will appear at the defect 33, as shown in Figure 4b; then, molten organic material is dripped into the groove 331 at the particle defect 33, as shown in Figure 4c, this organic material is the same as the organic material used for evaporation. The material is the same substance; after the organic material is cooled, it is ground to make the surface of the organic film 32 flat, and the restoration is completed, as shown in FIG. 4d. Wherein, the organic thin film 32 can be directly arranged on the base substrate 31, and the base substrate 31 can be selected from transparent materials such as glass, quartz, sapphire, plastic; or, the organic thin film 32 can be indirectly arranged on the base substrate 31, that is, the organic thin film Other structural film layers may also be formed between 32 and the base substrate 31, which is not limited in the present invention.

在上述实施例的方式二或者方式三的基础上,一种具体实施例中,步骤S103的缺陷修复工艺中,在颗粒缺陷处滴入熔化的有机材料具体过程为:通过高倍显微镜对准镜头观察并将喷嘴移动至颗粒缺陷区域上方,然后滴入熔化的有机材料。以上述实施例中的方式三为例,如图3b,通过高倍显微镜对准镜头观察并将喷嘴移动至颗粒缺陷33区域上方,然后滴入熔化的有机材料。On the basis of method 2 or method 3 of the above-mentioned embodiment, in a specific embodiment, in the defect repair process of step S103, the specific process of dropping molten organic material at the particle defect is as follows: observe through a high-power microscope and align the lens Move the nozzle over the particle defect area and drop in the molten organic material. Taking the third method in the above-mentioned embodiment as an example, as shown in FIG. 3 b , observe through a high-power microscope and align the lens and move the nozzle to the area above the particle defect 33 , and then drop molten organic material.

在上述实施例的基础上,一种具体实施例中,通过研磨使有机薄膜表面平坦,具体过程为:On the basis of the foregoing embodiments, in a specific embodiment, the surface of the organic film is made flat by grinding, and the specific process is:

通过高倍显微镜对准镜头观察并移动研磨头至颗粒缺陷区域,然后对有机材料进行研磨直至有机薄膜表面平坦。以上述实施例中的方式三为例,如图3c,通过高倍显微镜对准镜头观察并移动研磨头至颗粒缺陷33区域,然后对有机材料进行研磨直至有机薄膜32表面平坦。Use a high-power microscope to align the lens to observe and move the grinding head to the particle defect area, and then grind the organic material until the surface of the organic film is flat. Taking the third method in the above embodiment as an example, as shown in Fig. 3c, the high power microscope is used to align the lens to observe and move the grinding head to the particle defect 33 area, and then grind the organic material until the surface of the organic thin film 32 is flat.

在上述各实施例的基础上,一种具体实施例中,在依次蒸镀多层有机薄膜之前,还包括步骤:对衬底基板进行清洗和等离子处理。即在对衬底基板还没有进行任何一层有机薄膜蒸镀之前对衬底基板进行清洗和等离子处理。On the basis of the above-mentioned embodiments, in a specific embodiment, before sequentially evaporating the multi-layer organic thin films, a step is further included: cleaning and plasma treating the base substrate. That is, cleaning and plasma treatment are performed on the base substrate before any layer of organic thin film evaporation is performed on the base substrate.

在上述各实施例的基础上,一种具体实施例中,在依次蒸镀多层有机薄膜之后,还包括步骤:On the basis of the above-mentioned embodiments, in a specific embodiment, after successively evaporating multiple layers of organic thin films, further steps are included:

检测基板上的颗粒缺陷信息;Detect particle defect information on the substrate;

当检测到颗粒缺陷存在时,通过缺陷修复工艺修复颗粒缺陷。When the presence of particle defects is detected, the particle defects are repaired through a defect repair process.

在上述实施例的基础上,一种具体实施例中,在依次蒸镀多层有机薄膜并且检测基板上的颗粒缺陷信息之后,还包括步骤:On the basis of the above-mentioned embodiments, in a specific embodiment, after sequentially evaporating multiple layers of organic thin films and detecting particle defect information on the substrate, further steps are included:

形成金属阴极层,并通过构图工艺形成金属阴极图形;Forming a metal cathode layer and forming a metal cathode pattern through a patterning process;

在金属阴极层上形成光取出层;forming a light extraction layer on the metal cathode layer;

封装基板。package substrate.

显然,本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。Apparently, those skilled in the art can make various changes and modifications to the embodiments of the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.

Claims (9)

1.一种OLED制备方法,其特征在于,包括以下步骤:1. A kind of OLED preparation method is characterized in that, comprises the following steps: 依次蒸镀多层有机薄膜,其中:Sequentially vapor-deposit multi-layer organic films, in which: 在蒸镀一层有机薄膜之后和进行蒸镀下一层有机薄膜之前,包括:After evaporating one layer of organic film and before evaporating the next layer of organic film, including: 检测基板上的颗粒缺陷信息;Detect particle defect information on the substrate; 当检测到颗粒缺陷存在时,通过缺陷修复工艺修复所述颗粒缺陷。When the presence of particle defects is detected, the particle defects are repaired through a defect repair process. 2.根据权利要求1所述的OLED制备方法,其特征在于,2. OLED preparation method according to claim 1, is characterized in that, 当颗粒缺陷处的颗粒位于有机薄膜的表面时,所述缺陷修复工艺为采用激光工艺去除所述颗粒缺陷中的颗粒;When the particles at the particle defect are located on the surface of the organic film, the defect repair process is to use a laser process to remove the particles in the particle defect; 当颗粒缺陷处的颗粒部分嵌入有机薄膜时,所述缺陷修复工艺为:When the particles at the particle defects are partially embedded in the organic film, the defect repair process is: 采用激光工艺去除所述颗粒缺陷中的颗粒;using a laser process to remove particles in the particle defects; 通过研磨使有机薄膜表面平坦;Flatten the surface of the organic film by grinding; 或者,所述缺陷修复工艺为:Alternatively, the defect repair process is: 采用激光工艺去除所述颗粒缺陷中的颗粒;using a laser process to remove particles in the particle defects; 在颗粒缺陷处滴入熔化的有机材料,并使熔化的有机材料冷却;Dropping molten organic material at particle defects and allowing the molten organic material to cool; 通过研磨使有机薄膜表面平坦;Flatten the surface of the organic film by grinding; 当颗粒缺陷处的颗粒全部嵌入有机薄膜时,所述缺陷修复工艺为:When the particles at particle defects are all embedded in the organic film, the defect repair process is: 采用激光工艺去除所述颗粒缺陷中的颗粒;using a laser process to remove particles in the particle defects; 在颗粒缺陷处滴入熔化的有机材料,并使熔化的有机材料冷却;Dropping molten organic material at particle defects and allowing the molten organic material to cool; 通过研磨使有机薄膜表面平坦。The surface of the organic thin film is made flat by grinding. 3.根据权利要求2所述的OLED制备方法,其特征在于,当所述缺陷修复工艺中包括在颗粒缺陷处滴入熔化的有机材料时,所述在颗粒缺陷处滴入熔化的有机材料中的有机材料与蒸镀有机薄膜的材料相同。3. The OLED preparation method according to claim 2, wherein when the defect repairing process includes dropping molten organic material at the particle defect, the dropping of the molten organic material at the particle defect The organic material is the same as that of the vapor-deposited organic film. 4.根据权利要求2所述的OLED制备方法,其特征在于,当所述缺陷修复工艺中包括在颗粒缺陷处滴入熔化的有机材料时,所述在颗粒缺陷处滴入熔化的有机材料,具体包括:4. The OLED preparation method according to claim 2, wherein when the defect repairing process includes dropping molten organic material at the particle defect, the dropping of the molten organic material at the particle defect, Specifically include: 通过显微镜观察并将喷嘴移动至颗粒缺陷区域上方,然后滴入熔化的有机材料。Look through the microscope and move the nozzle over the particle defect area, then drop the molten organic material. 5.根据权利要求2所述的OLED制备方法,其特征在于,当所述缺陷修复工艺中包括通过研磨使有机薄膜表面平坦时,所述通过研磨使有机薄膜表面平坦,具体包括:5. The OLED preparation method according to claim 2, characterized in that, when the defect repairing process includes grinding the surface of the organic film to be flat, the grinding to make the surface of the organic film is flat includes: 通过显微镜观察并移动研磨头至缺陷区域,然后对有机材料进行研磨直至有机薄膜表面平坦。Observe through a microscope and move the grinding head to the defect area, and then grind the organic material until the surface of the organic film is flat. 6.根据权利要求1所述的OLED制备方法,其特征在于,所述检测基板上的颗粒缺陷信息,具体包括:6. The OLED preparation method according to claim 1, wherein the detecting particle defect information on the substrate specifically comprises: 通过显微镜对基板进行观察,确定基板上的颗粒缺陷信息。The substrate is observed through a microscope to determine particle defect information on the substrate. 7.根据权利要求1~6任一项所述的OLED制备方法,其特征在于,在所述依次蒸镀多层有机薄膜之前,还包括步骤:7. The OLED preparation method according to any one of claims 1 to 6, characterized in that, before the sequential deposition of multi-layer organic thin films, further comprising the steps of: 对衬底基板进行清洗和等离子处理。The substrate substrate is cleaned and plasma treated. 8.根据权利要求1~6任一项所述的OLED制备方法,其特征在于,在所述依次蒸镀多层有机薄膜之后,还包括步骤:8. The OLED preparation method according to any one of claims 1 to 6, characterized in that, after the sequential evaporation of multiple layers of organic thin films, further comprising the steps of: 检测基板上的颗粒缺陷信息;Detect particle defect information on the substrate; 当检测到颗粒缺陷存在时,通过缺陷修复工艺修复所述颗粒缺陷。When the presence of particle defects is detected, the particle defects are repaired through a defect repair process. 9.根据权利要求8所述的OLED制备方法,其特征在于,在所述依次蒸镀多层有机薄膜并且检测基板上的颗粒缺陷信息之后,还包括步骤:9. The OLED preparation method according to claim 8, characterized in that, after said sequentially vapor-depositing multilayer organic films and detecting particle defect information on the substrate, further comprising the steps of: 形成金属阴极层,并通过构图工艺形成金属阴极图形;Forming a metal cathode layer and forming a metal cathode pattern through a patterning process; 在金属阴极层上形成光取出层;forming a light extraction layer on the metal cathode layer; 封装基板。package substrate.
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Application publication date: 20141008