CN104091776B - A kind of wafer cleaning equipment for eliminating connecting hole etch by-products and condensing defect - Google Patents
A kind of wafer cleaning equipment for eliminating connecting hole etch by-products and condensing defect Download PDFInfo
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- CN104091776B CN104091776B CN201410357115.6A CN201410357115A CN104091776B CN 104091776 B CN104091776 B CN 104091776B CN 201410357115 A CN201410357115 A CN 201410357115A CN 104091776 B CN104091776 B CN 104091776B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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Abstract
The invention discloses a kind of wafer cleaning equipment for eliminating connecting hole etch by-products and condensing defect,For after wafer is attached hole etching,Before being cleaned,Purified treatment is carried out to wafer,By setting ejecting gun respectively by different directions in the cavity of wafer cleaning equipment,Purification gas can be sprayed to the wafer in the wafer support stage of rotation simultaneously,And gas after the purification in cavity and its etch by-products of carrying are extracted out by the exhaust tube at the inwall center of dome shape above cavity,Can also be by gas stirring device or nozzle that ejecting gun is provided with,To further enhance the effect of purification,Therefore,It can both be avoided to wafer using the wafer cleaning equipment of the present invention,Particularly CD is caused to damage,The etch by-products for removing wafer adhesion can be realized again,So as to eliminate etch by-products in cleaning process is waited with water reaction caused by coagulation defect.
Description
Technical field
The present invention relates to a kind of equipment for being purified to semiconductor crystal wafer, partly led more particularly, to one kind
After the connecting hole etching technics of body wafer, before cleaning, the wafer for eliminating connecting hole etch by-products condensation defect is net
Change equipment.
Background technology
As the development of semiconductor integrated circuit technique and critical size are scaled, semiconductor technology production should
With increasingly advanced manufacturing process.For example for connecting hole etching technics, state-of-the-art APF (advanced will be applied
Pattern film, advanced graphic films) technique.Simultaneously as CD diminution, etching reactant used will be more complicated,
And the byproduct compounds of its etching propose bigger challenge to follow-up cleaning.For example, the company of 55 nm logic products
Hole etch by-products are connect, coagulation defect can be produced in cleaning and water reaction, this defect will block filling out for connecting hole tungsten bolt
Fill, turn into the big obstruction for restricting Yield lmproved.
Connecting hole etches commonly used plasma and carried out, and it is the gas of partial ionization, by electronics, ion, free radical,
Neutral particle and photon composition.Plasma is the electroneutral mixture containing physics and the active particle of chemistry in itself, and these are lived
Chemical work(can be done by sprinkling free radical particle, and charge atom and molecule can do physics work(by sputtering.Therefore, banged by physics
Hit and chemically react, plasma process can complete various material surface modifyings, including surface active, pollutant removal, etching
And other effects.
At present, for the accessory substance after etching, commonly used etch chamber is after the completion of etching using plasma to wafer
Handled.Such a method will reduce productivity ratio, be additionally, since the characteristic of plasma, it is difficult to control it (such as not right to wafer
CD) cause to damage, and bring metal silicide loss etc..Another conventional mode is by increasing subsequent cleaning operation
Scavenging period come remove etching after accessory substance.Such a mode can equally reduce productivity ratio, and be difficult to clean up.If
Above two mode to be applied together, the not only influence to productivity ratio will double, while can also have the potential problems such as damage CD,
And defect is caused to remove unnet risk.So there is the drawbacks of very big in the mode that the above removes the accessory substance after etching.
The content of the invention
It is an object of the invention to overcome drawbacks described above existing for prior art, there is provided one kind eliminates connecting hole etching by-product
Thing condense defect wafer cleaning equipment, for the wafer be attached hole etching after, cleaned before, to the crystalline substance
Circle carries out purified treatment, and ejecting gun is set by pressing different directions in the cavity of the wafer cleaning equipment, can be simultaneously to crystalline substance
The wafer injection purification gas rotated in circle supporting table, and by the exhaust tube above the cavity by the cavity
Gas and its etch by-products of carrying are extracted out after purification, can also be come by gas stirring device or nozzle that ejecting gun is provided with
The effect of purification is further enhanced, can both avoid to wafer, particularly CD being caused to damage, can realize that removing the wafer glues again
Attached etch by-products, so as to eliminate etch by-products in cleaning process is waited with water reaction caused by coagulation defect.
To achieve the above object, technical scheme is as follows：
A kind of wafer cleaning equipment for eliminating connecting hole etch by-products and condensing defect, for being attached in the wafer
After the etching of hole, cleaned before, preposition purified treatment is carried out to the wafer, removes the etching by-product of the wafer adhesion
Thing, included with eliminating etch by-products and coagulation defect, the wafer cleaning equipment caused by water reaction：
Cavity, the cavity form the confined space for wafer purification, and the cavity has the upper of dome shape
Square inwall, the cavity are provided with the transmission window of the wafer；Using the guide effect of dome cambered surface, can make after being purified in cavity
Gas and its etch by-products of carrying can be as early as possible to converging at the top of cavity and extract out, to avoid etch by-products in cavity
Deposition or secondary pollution wafer；Wafer is purified by transmission window into cavity, and is moved after cleaning by transmission window
Go out cavity；
Ejecting gun, including it is movably arranged in the cavity top jet rifle of top and located at the inside cavities face
One side wall ejecting gun, the ejecting gun connect the purification source of the gas outside the cleaning equipment, the top jet rifle and the side
Wall ejecting gun is set by different directions, can spray purification to the wafer being placed in the cavity from different directions respectively
Gas, purified treatment is carried out to the wafer；Because crystal column surface has a stereochemical structure of connecting hole, two ejecting guns respectively from
Different directions spray purification gas, can impact etch by-products, the quarter for preferably adhering to connecting hole position from different directions
Erosion accessory substance washes away；The ejecting gun is provided with gas stirring device or nozzle, and ejecting gun is can adjust by gas stirring device
The flow regime of interior purification gas, the injection form and outlet pressure of purification gas are can adjust by nozzle；The nozzle has
The spout of contraction or the spout of gondola water faucet shape, the spout of contraction can play a part of convergence to purification gas, integrate purification gas
A branch of supercharging sprays to wafer, and good souring is produced to wafer；The spout of gondola water faucet shape can make purification gas be divided into multi beam increasing
Pressure sprays to wafer, can expand to wafer while directly washing away area, the microcosmic etching knot with thinner air-flow to wafer
Structure, which produces, more preferably washes away effect；
Wafer support stage, the lower section in the cavity is rotated, for carrying the wafer, the supporting table is positioned at described
The lower section of top jet rifle and the side wall ejecting gun；It can drive wafer rotation by the rotation of wafer support stage, make from difference
The purification gas that direction is ejected forms eddy flow state in crystal column surface, using the Scouring Characteristic of purification gas eddy flow, makes wafer
The etch by-products of adhesion loosen, and under the induced effect of purification gas by centrifugal force from wafer separate so that wafer
It is purified；
Exhaust tube, the bleeding point of the exhaust tube are located at the centre of the cavity upper inner wall, and with the cavity
Inwall is concordant, and the exhaust tube connects the gas concentration unit outside the cleaning equipment, and the exhaust tube can be by the cavity
Gas and its etch by-products of carrying are extracted out after interior purification, side by side to the gas concentration unit.In bleeding point and cavity
Wall is concordant, coordinates the convergence of dome to act on, and can preferably extract gas and its etch by-products of carrying after purification out；
Wherein, the top jet rifle is vertical at the top at the supporting table center, and it is between the supporting table
Distance is adjustable, and the side wall ejecting gun favours the supporting table and set, and its spray angle between the supporting table can
Adjustment, the jet length of purification gas is adjusted by adjusting the high and low position of supporting table；The wafer cleaning equipment in use,
Rotated by starting supporting table, drive wafer rotation, and open top jet rifle, side wall ejecting gun, from the vertical direction of wafer
And the inclined both direction in side is higher than the purification gas of room temperature to wafer injection simultaneously, in the process, continue adjustment injection
Jet length, spray angle and injection pressure, flow between rifle and wafer, percussion is imposed with the upper surface to wafer,
Make wafer adhere to etch by-products loosen, and by wafer rotate caused by centrifugal force, make etch by-products in purification gas
Carrying under from wafer separate so that wafer is purified.
Further, the transmission window of the wafer is located at the side wall of the cavity, including input window and output window.
2 windows are set, wafer can be facilitated to be passed in and out with unidirectional flowing water, improve purification efficiency.
Further, the top jet rifle, side wall ejecting gun are divided into the top and side of opposite side in the cavity,
Its position and angle adjustable in the cavity, can make purification gas spray to wafer in opposite directions from different directions, net to strengthen
Change effect, and the distance between ejecting gun and wafer, horizontal level and injection purified gas can be adjusted according to the actual conditions of wafer
The angle of body.
Further, the top jet rifle is vertical at the top at the supporting table center, and the adjustable and branch
The distance between platform is supportted, the purification gas sprayed from top is under appropriate vertical range, by centrifugal action from wafer
The heart is stretched laterally, is purified with making wafer uniform.
Further, the ejecting gun is provided with pressure and flow regulator, can be adjusted according to the actual conditions of wafer net
Change the injection pressure and flow of gas, to further enhance purification effect.
Further, one or more gas stirring device, the gas stirring device are provided with the jet pipe of the ejecting gun
The spiral blade set is flowed to along the purification gas including one, the spiral blade is rotatablely connected the spray of the ejecting gun
Inside pipe wall, when being connected with the purification gas in the jet pipe of the ejecting gun, the spiral blade can be in the purification gas
Impact under rotate, the purification gas is changed into contorted air-flow by parallel shape air-flow after by the spiral blade
Spray.The flow regime of purification gas in ejecting gun is can adjust by gas stirring device, purification gas can be made in contact wafer
Moment, produce the active force of one rotary-brushing type, more preferable effect played with the Local Purification to wafer.
Further, the supporting table has the level table for carrying the wafer, makes wafer when rotated in level
State held stationary, is balancedly purified；The supporting table is rotatable, and lower in vertical direction can move, and can spray
Rifle position is put fix after, adjust the jet length of purification gas by adjusting the high and low position of supporting table.
Using the present invention above-mentioned technical proposal in wafer cleaning equipment when, wafer be attached hole etching after, will
Wafer is put into from the input window of cavity, is placed in supporting table.Starting supporting table makes its rotation, and drives wafer to rotate.Then,
Top jet rifle, side wall ejecting gun are opened, the purification from the top of wafer and side both direction to wafer injection higher than room temperature
Gas, such as nitrogen or inert gas or its mixed gas, and using the centrifugal action of wafer rotation, make purification gas in wafer
Surface forms eddy flow state.Meanwhile according to the actual conditions of wafer, adjust the jet length between ejecting gun and wafer, spray
Firing angle degree and injection flow, certain percussion is imposed with the upper surface to wafer, the etch by-products pine for adhering to wafer
It is dynamic, and by wafer rotate caused by centrifugal force, make etch by-products under the carrying of purification gas from wafer separate so that
Wafer is purified.Then open exhaust tube, using the guide effect of cavity dome cambered surface, make in cavity purified gas and
Its etch by-products carried is converged and extracted out to bleeding point as soon as possible, to avoid etch by-products in chamber internal deposition or secondary
Pollute wafer.The mode that one can also be selected installs gas stirring device in the jet pipe of ejecting gun or installs spray in the jet pipe mouth of pipe
Mouth, the flow regime of purification gas in ejecting gun is can adjust by gas stirring device, purification gas can adjust by nozzle
Form and outlet pressure are sprayed, to further enhance the effect of purification.After purification, stop the rotation of supporting table, close spray
Rifle and exhaust tube are penetrated, output window is opened, wafer is taken out, can proceed with normal cleaning step.
It can be seen from the above technical proposal that using the wafer cleaning equipment of the present invention, hole etching is attached in wafer
Afterwards, before being cleaned, preposition purified treatment can be carried out to wafer, the present invention is hung down by being pressed in the cavity of wafer cleaning equipment
Straight and inclination both direction sets top jet rifle and side wall ejecting gun respectively, can be from vertical direction and incline direction simultaneously to crystalline substance
The wafer injection purification gas rotated in circle supporting table, and by the exhaust tube at cavity dome center by gas after the purification in cavity
Body and its etch by-products of carrying are extracted out, can also be by installing gas stirring device in the jet pipe of ejecting gun or in jet pipe pipe
Mouth installation nozzle, to further enhance the effect of purification, it can both avoid to wafer, particularly CD being caused to damage, can realize again
The etch by-products of the wafer adhesion are removed, react generation with water in cleaning process is waited so as to eliminate etch by-products
Coagulation defect.The present invention can effectively remove caused accessory substance after etching while productivity ratio is ensured, for follow-up cleaning
Step provides bigger process window, therefore provides powerful guarantee for the lifting of yield.
Brief description of the drawings
Fig. 1 is that a kind of a kind of structure for eliminating the wafer cleaning equipment that connecting hole etch by-products condense defect of the present invention is shown
It is intended to；
Fig. 2 is the structural representation of the gas stirring device in Fig. 1；
Fig. 3 is a kind of another structure for eliminating connecting hole etch by-products and condensing the wafer cleaning equipment of defect of the present invention
Schematic diagram.
Embodiment
Below in conjunction with the accompanying drawings, the embodiment of the present invention is described in further detail.
It should be noted that in following embodiments, when embodiments of the present invention are described in detail, in order to clearly show that
The structure of the present invention is special that structure in accompanying drawing is not drawn according to general proportion in order to illustrate, and has carried out partial enlargement, become
Shape and omission processing, therefore, should avoid being understood in this, as limitation of the invention.
Embodiment one
In the present embodiment, referring to Fig. 1, Fig. 1, which is a kind of elimination connecting hole etch by-products of the present invention, condenses defect
A kind of structural representation of wafer cleaning equipment.The present invention wafer cleaning equipment, for wafer be attached hole etching after,
Before being cleaned, preposition purified treatment is carried out to wafer, the etch by-products of wafer adhesion are removed, to eliminate etch by-products
With water reaction caused by coagulation defect.The wafer cleaning equipment of the present invention includes cavity, ejecting gun, wafer support stage and pumping
Manage several parts.As shown in figure 1, cavity 1 forms the confined space purified for wafer 19, cavity 1 has dome shape
Upper inner wall 8.Using the guide effect of dome cambered surface, purified gas and its etching by-product of carrying in cavity 1 can be made
Thing can be converged and extracted out to the top of cavity 1 as early as possible, to avoid etch by-products deposition or secondary pollution wafer 19 in cavity 1.
Side wall of the both sides of cavity 1 close to lower section is provided with the transmission window 2 and 17 of 2 wafers 19, wherein 1 is input window 2, another 1
It is output window 17.Wafer 19 is purified by input window 2 into cavity 1, and is moved after cleaning by output window 17
Go out cavity 1.The form of 2 windows is set, wafer 19 can be facilitated to be passed in and out with unidirectional flowing water, improves purification efficiency.
Please continue to refer to Fig. 1.Position in cavity 1 by the top is provided with a top jet rifle by vertical injection direction
11.Top jet rifle 11 is arranged in the side wall of cavity 1 by the connecting tube 7 turned back, and can be pacified by the activity in the side wall of cavity 1
Fixed mechanism 3 is filled to adjust vertical height and horizontal level of the lower end jet of top jet rifle 11 in cavity 1.With top
In the side wall of cavity 1 of the opposite side of portion's ejecting gun 11 and less than the setting height(from bottom) of top jet rifle 11,1 side wall is tiltedly installed with
Ejecting gun 18.Side wall ejecting gun 18 is arranged in the side wall of cavity 1 by the connecting tube 12 turned back, and can be by the side wall of cavity 1
Movable mechanism for installing 13 adjust spray angle and horizontal level of the side wall ejecting gun 18 in cavity 1.Top jet
Rifle 11 connects outside purification source of the gas (figure omits) by air inlet pipe 4 with 16 respectively with side wall ejecting gun 18, can be sprayed into cavity 1
Purification gas.Top jet rifle 11 and side wall ejecting gun 18 are separately mounted to top and side in cavity 1, can be respectively from difference
Purification gas is sprayed in direction to the wafer 19 being placed in cavity 1, purified treatment is carried out to wafer 19, to strengthen purification effect.
Because the surface of wafer 19 has the stereochemical structure of connecting hole, two ejecting guns 11 and 18 spray from different directions respectively
Purification gas, etch by-products can be impacted from different directions, preferably wash away the etch by-products that connecting hole position adheres to
Fall.Pressure-regulating device 5 and 15 and flow are respectively provided with the air inlet pipe 4 and 16 of top jet rifle 11 and side wall ejecting gun 18
Adjusting means 6 and 14, the injection pressure and flow of purification gas can be adjusted according to the actual conditions of wafer 19, to further enhance
Purify effect.Height and horizontal level of the top jet rifle 11 in cavity 1 can adjust, and side wall ejecting gun 18 is in cavity 1
Horizontal level and spray angle can adjust, and can adjust the distance between ejecting gun and wafer, water according to the actual conditions of wafer 19
The angle of purification gas is put and sprayed to prosposition, preferably to wash away the etch by-products that connecting hole position adheres to totally.
Please continue to refer to Fig. 1.Wafer support stage 20 is arranged on the center of lower section in cavity 1, for carrying wafer 19.Support
The table top of platform 20 is is horizontally mounted, so that wafer 19 is balancedly purified when rotated in horizontality and held stationary.
Supporting table 20 is located at the lower section of top jet rifle 11 and side wall ejecting gun 18, and the lower central of supporting table 20 is equipped with rotating shaft 21, turns
Rotation and elevating mechanism 22 outside the connection cavity 1 of axle 21.Rotation and elevating mechanism 22 can use traditional electromechanical integration to pass
Dynamic form or other mechanism forms that can be rotated and lift simultaneously are realized.Rotation and elevating mechanism 22 drive crystalline substance by rotating shaft 21
Circle supporting table 20 can rotate and move up and down simultaneously in cavity 1.When in use, can be fixed in the position of ejecting gun 11 and 18
Afterwards, the jet length of purification gas is adjusted by adjusting the high and low position of supporting table 20.Pass through turning for wafer support stage 20
It is dynamic, drive wafer 19 to rotate, make to form eddy flow state from the purification gas that vertical and incline direction ejects on the surface of wafer 19,
Using the Scouring Characteristic of purification gas eddy flow, the etch by-products that wafer 19 adheres to are loosened, and acted in the band of purification gas
Separated with lower by centrifugal force from wafer 19, so that wafer 19 is purified.
Please continue to refer to Fig. 1.Exhaust tube 9 is arranged on the centre of the top of cavity 1, and connects inside cavity 1, exhaust tube
9 bleeding point 10 is concordant with the inwall of cavity 1, and exhaust tube 9 connects the gas concentration unit outside cleaning equipment (figure omits).Exhaust tube
9 can extract gas after the purification in cavity 1 and its etch by-products of carrying out, side by side to gas concentration unit.Bleeding point 10
It is concordant with the inwall of cavity 1, coordinate the dome inwall 8 of cavity 1 to air-flow convergence effect, can preferably extract out purification after gas and its
The etch by-products of carrying.
Please continue to refer to Fig. 1.2 gas stirring dresses are respectively provided with the jet pipe of top jet rifle 11 and side wall ejecting gun 18
23 are put, for adjusting the flow regime of purification gas in ejecting gun, plays more preferable clean-up effect.The tool of gas stirring device 23
Body structure can be illustrated by Fig. 2.
Referring to Fig. 2, Fig. 2 is the structural representation of the gas stirring device in Fig. 1.As shown in Fig. 22 gas stirrings
Device 23 is arranged in series in the jet pipe 27 of ejecting gun (or being directly installed between the pipeline section of jet pipe 27 of ejecting gun).Each gas
The inside of body agitating device 23 includes a spiral blade set along purification gas flow direction (left arrow is signified in such as figure)
26, spiral blade 26 imitates screw driven form and direction processing.The center of spiral blade 26 is provided with rotating shaft 25, rotating shaft
25 two ends are rotatablely connected a support 24 respectively, and support 24 is fixedly connected with the inwall of jet pipe 27 (if by gas stirring device
Directly it is installed between the pipeline section of jet pipe 27 of ejecting gun, then support 24 is the inwall for being fixedly connected with gas stirring device 23).By
It is smaller in the caliber of jet pipe 27, in order to strengthen the agitaion to gas, spiral blade 26 is made to it is bigger, and therefore
The tube wall of the jet pipe 27 of gas stirring device installation place has been made into circular arc and has extended out processing.It is net when being connected with the jet pipe 27 of ejecting gun
When changing gas, spiral blade 26 can rotate under the impact of purification gas, make purification gas after by spiral blade 26
It is changed into contorted air-flow by parallel shape air-flow to spray (among in such as figure and right side arrow is signified).In 2 gas stirring devices
Second gas stirring device can further strengthen by the contorted of the contorted air-flow of first gas stirring device outflow
State.The flow regime of purification gas in ejecting gun is can adjust by gas stirring device, purification gas can be made in contact wafer
Moment, the active force of one rotary-brushing type is produced, more preferable effect is played with the Local Purification to wafer.
When using wafer cleaning equipment in the present embodiment, after wafer 19 is attached hole etching, by wafer 19 from
The input window 2 of cavity 1 moves into, and is placed in supporting table 20.Top jet rifle 11 is vertical to the top at the center of supporting table 20,
Adjust the distance between wafer；And the spray angle and horizontal level of side wall ejecting gun 18 are adjusted, so as to its injection
Purification gas can spray to the eject position needed for the upper surface of wafer 19 exactly.Then, starting supporting table 20 makes its rotation, and band
Dynamic wafer 19 rotates.Then, top jet rifle 11, side wall ejecting gun 18 are opened, is tilted from the vertical direction of wafer 19 and side
Both direction simultaneously to the injection of wafer 19 higher than the purification gas of room temperature, such as nitrogen or its mixed gas or inert gas,
And the centrifugal action rotated using wafer 19, purification gas is stretched laterally from the center of wafer 19, and on the surface of wafer 19
Eddy flow state is formed, using the souring of eddy flow, wafer 19 is equably purified.In the process, according to wafer 19
Actual conditions, can also continue to adjust jet length between ejecting gun and wafer 19, spray angle and injection pressure, stream
Amount, certain effective percussion is imposed with the upper surface to wafer 19, loosens the etch by-products that wafer 19 adheres to, and lead to
Cross wafer 19 and rotate caused centrifugal force, etch by-products is separated under the carrying of purification gas from wafer 19, so that brilliant
Circle 19 is purified.Gas stirring device 23 can also be installed in the jet pipe of ejecting gun 11 and 18, can adjust net in ejecting gun
Change the flow regime of gas, to further enhance the effect of purification.Then, exhaust tube 9 is opened, using in the dome cambered surface of cavity 1
The air-flow guide effect of wall 8, purified gas and its etch by-products of carrying in cavity 1 are made to be converged as soon as possible to bleeding point 10
Coalescence is extracted out, to avoid etch by-products deposition or secondary pollution wafer in cavity 1.After purification, stop supporting table 20
Rotation, close ejecting gun 11,18 and exhaust tube 9, open output window 17, wafer 19 is taken out, you can continue normal
Cleaning step.
Embodiment two
In the present embodiment, referring to Fig. 3, Fig. 3, which is a kind of elimination connecting hole etch by-products of the present invention, condenses defect
Another structural representation of wafer cleaning equipment.As shown in figure 3, the primary structure of wafer cleaning equipment in the present embodiment with
Embodiment one is identical, differs only in, no in the jet pipe of top jet rifle 11 and side wall ejecting gun 18 to be provided with gas
Agitating device, but the ejection end mouth of pipe in top jet rifle 11 and side wall ejecting gun 18 is respectively provided with 1 nozzle 28, passes through nozzle
The injection form and outlet pressure of 28 adjustable purification gas.In the present embodiment, nozzle 28 uses the spout (spout of gondola water faucet shape
Identical with common gondola water faucet, mapping is slightly handled).The spout of gondola water faucet shape can make purification gas be divided into multi beam supercharging spray to wafer 19,
It can expand to wafer 19 while directly washing away area, the microcosmic etching structure of wafer 19 is being produced more with thinner air-flow
Good washes away effect.The other structures of wafer cleaning equipment in the present embodiment are identical with embodiment one, therefore repeat no more.
It should be noted that nozzle can also be used with the spout shunk, such as the circle hole shape spout or flat mouth of contraction
Shape spout and other any nozzle configurations that convergence and pressurization can be played to purification gas, as long as purification gas can be enable
Enough integrated a branch of supercharging sprays to wafer, and good souring is produced to wafer.
Above-described is only the preferred embodiments of the present invention, the embodiment and the patent guarantor for being not used to the limitation present invention
Scope, therefore the equivalent structure change that every specification and accompanying drawing content with the present invention is made are protected, similarly should be included in
In protection scope of the present invention.
Claims (6)
- A kind of 1. wafer cleaning equipment for eliminating connecting hole etch by-products and condensing defect, it is characterised in that the wafer purification Equipment be used for the wafer be attached hole etching after, cleaned before, to the wafer carry out purified treatment, remove institute The etch by-products of wafer adhesion are stated, to eliminate etch by-products and coagulation defect caused by water reaction, the wafer purification Equipment includes：Cavity, the cavity form the confined space for wafer purification, and the cavity has in the top of dome shape Wall, the cavity are provided with the transmission window of the wafer；Ejecting gun, including it is movably arranged in the cavity top jet rifle of top and located at the side in the inside cavities face Wall ejecting gun, the ejecting gun connect the purification source of the gas outside the cleaning equipment, the top jet rifle and side wall spray Penetrate rifle to set by different directions, purified gas can be sprayed to the wafer being placed in the cavity from different directions respectively Body, purified treatment is carried out to the wafer；The ejecting gun is provided with gas stirring device or nozzle, and the nozzle has what is shunk The spout of spout or gondola water faucet shape；Wafer support stage, the lower section in the cavity is rotated, for carrying the wafer, the supporting table is located at the top The lower section of ejecting gun and the side wall ejecting gun；Exhaust tube, the bleeding point of the exhaust tube are located at the centre of the cavity upper inner wall, and with the cavity inner wall Concordantly, the exhaust tube connects the gas concentration unit outside the cleaning equipment, and the exhaust tube can be by the cavity Gas and its etch by-products of carrying are extracted out after purification, side by side to the gas concentration unit；Wherein, the distance between the top jet rifle is vertical at the top at the supporting table center, and it is with the supporting table Adjustable, the side wall ejecting gun favours the supporting table and set, and its spray angle between the supporting table can adjust, The jet length of purification gas is adjusted by adjusting the high and low position of supporting table；The wafer cleaning equipment is in use, pass through Start supporting table to rotate, drive wafer rotation, and open top jet rifle, side wall ejecting gun, vertical direction and side from wafer The inclined both direction in face simultaneously to wafer injection higher than room temperature purification gas, in the process, continue adjust ejecting gun with Jet length, spray angle and injection pressure, flow between wafer, impose percussion with the upper surface to wafer, make crystalline substance Circle adhesion etch by-products loosen, and by wafer rotate caused by centrifugal force, make etch by-products taking in purification gas From wafer separate under band, so that wafer is purified.
- 2. wafer cleaning equipment as claimed in claim 1, it is characterised in that the transmission window of the wafer is located at the cavity Side wall, including input window and output window.
- 3. wafer cleaning equipment as claimed in claim 1, it is characterised in that the top jet rifle, side wall ejecting gun set up separately In the top and side of opposite side in the cavity, its position and angle adjustable in the cavity.
- 4. the wafer cleaning equipment as described in claim 1 or 3, it is characterised in that the ejecting gun is provided with pressure and flow is adjusted Regulating device.
- 5. the wafer cleaning equipment as described in claim 1 or 3, it is characterised in that be provided with the jet pipe of the ejecting gun one to Multiple gas stirring devices, the gas stirring device include one and the spiral blade set, institute are flowed to along the purification gas The nozzle wall that spiral blade is rotatablely connected the ejecting gun is stated, when being connected with the purification gas in the jet pipe of the ejecting gun When, the spiral blade can rotate under the impact of the purification gas, make the purification gas by the helical form It is changed into contorted air-flow by parallel shape air-flow after blade to spray.
- 6. wafer cleaning equipment as claimed in claim 1, it is characterised in that the supporting table has the water for carrying the wafer Flat surface, the supporting table is rotatable, and lower in vertical direction can move.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410357115.6A CN104091776B (en) | 2014-07-25 | 2014-07-25 | A kind of wafer cleaning equipment for eliminating connecting hole etch by-products and condensing defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN108598019A (en) * | 2018-04-17 | 2018-09-28 | 德淮半导体有限公司 | Wafer cleaning equipment and its cleaning method |
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| CN107020285B (en) * | 2017-04-19 | 2021-01-15 | 京东方科技集团股份有限公司 | Ultrasonic cleaning device and substrate processing system |
| CN108878241B (en) * | 2017-05-10 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Semiconductor device and method for cleaning reaction chamber of semiconductor device |
| CN108649006B (en) * | 2018-06-04 | 2021-11-05 | 中国科学院微电子研究所 | Wafer cleaning device and wafer cleaning method |
| CN113628988B (en) * | 2020-05-08 | 2024-08-09 | 台湾积体电路制造股份有限公司 | Semiconductor wafer manufacturing method and semiconductor manufacturing equipment |
| CN111722479B (en) * | 2020-06-23 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Photoresist stripping method |
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