CN104049197B - Wafer permits Acceptance Tests system and Acceptable testing process - Google Patents
Wafer permits Acceptance Tests system and Acceptable testing process Download PDFInfo
- Publication number
- CN104049197B CN104049197B CN201410286810.8A CN201410286810A CN104049197B CN 104049197 B CN104049197 B CN 104049197B CN 201410286810 A CN201410286810 A CN 201410286810A CN 104049197 B CN104049197 B CN 104049197B
- Authority
- CN
- China
- Prior art keywords
- probe
- module
- test
- test structure
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 267
- 238000000034 method Methods 0.000 title abstract description 16
- 239000000523 sample Substances 0.000 claims abstract description 167
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 238000012545 processing Methods 0.000 claims description 25
- 238000010998 test method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 76
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Permit Acceptance Tests system and method, including probe card the invention provides a kind of wafer, probe station, test device, in addition to：Control module, for receiving the initial position parameters of test structure, control probe is in contact with the test structure on wafer, and controls the keying of test device；Position detection unit, the actual location data being in contact for exploratory probe with test structure；Judge module, for the actual location data detected according to position detection unit, to judge whether probe contacts in place with test structure；The judged result control test device that control module is drawn according to judge module starts or temporarily ceased to be tested.Pass through the present invention, before test device is tested, it is possible to detect contact situation of the probe with test structure, can be checked and corrected in time the initial position parameters of test structure on wafer, so that it is guaranteed that the quality of follow-up test process, improves testing efficiency and yield of devices.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer acceptance test system and a wafer acceptance test method.
Background
In order to ensure the quality of the finished wafers and the stability of the production line process, a semiconductor foundry must perform a Wafer Acceptance Test (WAT) on the wafers before the wafers are shipped. And if the WAT test result is qualified, the processing technology of the tested wafer is normal, and the quality of the wafer is qualified.
The WAT automatic test system commonly used at present consists of a tester and a probe station, wherein the probe station is loaded with a wafer to be tested and a probe card, and the probe card is used for carrying out contact test on the wafer; the tester is used for outputting excitation of voltage, current and the like, calculating the voltage and the current fed back from the probe card according to a preset program, and finally outputting a test result.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a conventional wafer acceptance test method; the existing wafer acceptance test method comprises the following steps:
step L01: loading a wafer to be tested and a probe card on a probe station;
step L02: inputting position parameters of the test structure into the tester;
step L03: the tester sends the position parameters of the test structure to the probe station, and the probe station enables the probes on the probe card to find the test structure according to the position parameters of the test structure;
step L04: testing whether the wafer is qualified or not by adopting a tester;
step L05: testing the obtained test data;
step L06: if the test data is abnormal, checking the position parameters of the test structure, correcting the position parameters of the test structure, and then repeating the process; and if the test data is normal, ending the test.
In the WAT test process, before the wafer is automatically tested, the physical coordinates and the step pitch of the PAD or the test structure to be tested are input on the tester according to the product information and the reticle information of different products, the tester transmits the coordinates and the step pitch to the probe station in the form of instructions, and the probe station finds the position of the PAD or the test structure to be tested according to the coordinates and the step pitch. In the process, the coordinates of the test PAD or the test structure are converted into relative coordinates and absolute coordinates manually, that is, the coordinates of the test PAD and the test structure on the layout or the photoetching plate in the product are converted into the absolute coordinates on the wafer, and the probe station searches the test PAD or the test structure corresponding to the coordinates on the wafer according to the input absolute coordinates and the stepping distance. Because the coordinates are converted and the stepping distance is input manually, there is a certain risk that the coordinates are converted incorrectly or input incorrectly, which causes problems in the contact of the probe with the test structure. Generally, there are three types of positional relationships for the probe to contact the test structure, as shown in fig. 2a, 2b and 2c, fig. 2a is a schematic diagram of the probe contacting the correct test structure; FIG. 2b is a schematic diagram of a portion of a probe in contact with an incorrect test structure; FIG. 2c is a schematic representation of all probes in contact with an incorrect test structure. In the existing WAT test method, a coordinate error or a stepping distance error can be found only when the test is completed and the test data is checked, and the transformed coordinate and stepping distance need to be checked again for retesting. On one hand, the testing efficiency is reduced, and on the other hand, if the probe contacts the functional circuit part because of wrong coordinates, the circuit is short-circuited or broken and the function is failed, so that the product yield is reduced and the production cost is increased.
Disclosure of Invention
In order to overcome the above problems, the present invention aims to: the wafer acceptance test system is improved, the wafer detection unit and the judgment module are added, before the test device tests, the test structure can be checked to be not in contact with the probe, so that the position parameter of the test structure can be corrected, then the test device is enabled to test, the defect that the position parameter can only be adjusted after the test device tests the wafer in the existing system is overcome, and the problem that a device fails due to the fact that the probe is in contact with a functional circuit part is avoided.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention provides a wafer acceptance test system, which comprises: the system comprises a probe card loaded with a plurality of probes, a probe station loaded with a wafer with a plurality of test structures, a test device used for detecting whether the wafer is qualified, a control module, a position detection unit and a judgment module;
the control module receives initial position parameters of the test structure and controls the probe to be in contact with the test structure on the wafer according to the initial position parameters; controlling the opening and closing of the testing device;
the position detection unit is used for detecting actual position data of the probe in contact with the test structure;
the judging module is used for judging whether the probe is in place in contact with the test structure according to the actual position data detected by the position detecting unit;
and the control module controls the test device to start or temporarily stop testing according to the judgment result obtained by the judgment module.
In a preferred embodiment of the present invention, the wafer acceptance test system further includes an alarm module, and the alarm module is connected to the judgment module; and the alarm module starts to alarm when receiving a signal that the judgment module judges that the probe is not in place in contact with the test structure.
In a preferred embodiment of the present invention, the position detection unit includes: the pressure sensing module and the signal processing module; the actual position data takes the form of a pressure signal; wherein,
the pressure sensing module is used for detecting the pressure applied to the probe due to the fact that the probe is in contact with the surface of the wafer and sending a pressure signal to the signal processing module;
the signal processing module is used for collecting and amplifying the pressure signal sent by the pressure sensing module and sending the amplified pressure signal to the judging module;
the judging module receives the amplified pressure signals sent by the signal processing module and compares whether the intensities of the amplified pressure signals are consistent; and/or presetting a standard pressure value, wherein the signal processing module compares whether the intensity of each amplified pressure signal is consistent with the preset standard pressure value or not.
In a preferred embodiment of the present invention, the pressure to which the probe is subjected includes: different materials and/or different heights contacting the surface of the wafer are subjected to different pressures.
In order to achieve the above object, the present invention further provides a wafer acceptance test method, which includes:
step S01: loading the wafer and the probe card on a probe platform;
step S02: the control module receives initial position parameters of the test structure;
step S03: the control module controls the probe on the probe card to contact with the test structure on the wafer according to the initial position parameter of the test structure;
step S04: the position detection unit detects actual position data of each probe in contact with the test structure and sends the actual position data to the judgment module;
step S05: the judging module judges whether the probe is in place in contact with the test structure according to the actual position data sent by the position detecting unit; and the control module controls the test device to start or temporarily stop testing according to the judgment result obtained by the judgment module.
In a preferred embodiment of the present invention, the determining module is connected to an alarm module, and the step S05 specifically includes:
the judging module judges whether the probe is in place in contact with the test structure according to the actual position data sent by the position detecting unit;
if yes, the judging module sends a starting signal to the control module; after the control module receives the starting signal, the test device is controlled to start testing;
if not, the judging module sends a temporary stop signal to the control module, and simultaneously sends a signal that the probe is not in place in contact with the test structure to the alarm module; the alarm module starts to alarm after receiving a signal that the probe is not in contact with the test structure in place; after the control module receives the temporary stop signal, the control module controls the test device to temporarily stop testing; after checking and correcting the initial position parameters of the test structure, the steps S02-S05 are repeated.
In a preferred embodiment of the present invention, the position detection unit includes: the pressure sensing module and the signal processing module; the wafer acceptance testing method specifically comprises the following steps:
step A01: loading the wafer and the probe card on a probe platform;
step A02: the control module receives initial position parameters of the test structure;
step A03: the control module controls the probe on the probe card to contact with the test structure on the wafer according to the initial position parameter of the test structure;
step A04: the pressure sensing module detects pressure applied to each probe in the probe card due to the fact that each probe contacts the surface of the wafer, and sends a pressure signal to the signal processing module;
step A05: the signal processing module collects and amplifies the pressure signal sent by the pressure sensor and sends the amplified pressure signal to the judging module;
step A06: the judging module compares whether the intensities of the amplified pressure signals are consistent or not; and/or presetting a standard pressure value, wherein the judging module compares whether the intensity of the amplified pressure signal is consistent with the preset standard pressure value or not; and the control module controls the test device to start or temporarily stop testing according to the judgment result sent by the judgment module.
In a preferred embodiment of the present invention, the pressure to which the probe is subjected includes: different materials and/or different heights contacting the surface of the wafer are subjected to different pressures.
According to the wafer acceptance test system, the actual position data of the contact between the probe and the test structure, such as a pressure signal of the contact between the probe and the test structure, is detected by the position detection unit, and whether the probe is in place in the test structure is judged by the judgment module according to the actual position data, so that the contact condition of the probe and the test structure can be detected before the test device performs the test, if the contact is incorrect, for example, all or part of the probe is not in contact with the test structure, the initial position parameter of the test structure on the wafer can be timely checked and corrected, the quality of the subsequent test process performed by the test device is ensured, the test efficiency is improved, the problem of device failure caused by the contact of the probe with other circuit parts on the wafer is avoided, and the yield of the device is improved.
Drawings
FIG. 1 is a flow chart illustrating a conventional wafer acceptance test method
FIG. 2a is a schematic diagram of a probe in contact with a correct test structure
FIG. 2b is a schematic diagram of a portion of a probe in contact with an incorrect test structure
FIG. 2c is a schematic diagram of all probes in contact with an incorrect test structure
FIG. 3 is a block diagram of a wafer acceptance test system according to the present invention
FIG. 4 is a flow chart illustrating a wafer acceptance test method according to the present invention
Detailed Description
In order to make the contents of the present invention more comprehensible, the present invention is further described below with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
As described above, in the conventional wafer acceptance test method, after the wafer is tested by the tester, if data abnormality is found, it can be known that the probe is not correctly contacted with the test structure, that is, the probe is in place, so that not only is the detection efficiency reduced, but also the problem of device failure due to the fact that the probe is contacted with the functional circuit on the wafer can occur, thereby reducing the yield of products; therefore, the wafer acceptance test system improves the existing wafer acceptance test system, and is additionally provided with the position detection unit and the judgment module, so that the contact condition of the probe and the test structure can be mastered before the test device performs the test, the timely correction is made, the test efficiency is improved, the problem of device failure is avoided, and the product yield is improved.
The wafer acceptance test system of the present invention will be described in further detail with reference to fig. 3 and the exemplary embodiment. It should be noted that the drawings are in a simplified form and are not to precise scale, and are only used for conveniently and clearly achieving the purpose of assisting in describing the embodiment.
FIG. 3 is a block diagram of a wafer acceptance test system according to the present invention. The wafer acceptance test system of the invention comprises: the device comprises a probe card, a probe station, a testing device, a control module, a position detection unit and a judgment module; wherein,
a probe card loaded with a plurality of probes; specifically, in a preferred embodiment of the present invention, the probe card may be any shape, such as square, circular, etc. The number of probes that can be loaded on the probe card may vary from 1 to 1000. The probes in the probe card are used to make contact with the wafer so that the test apparatus delivers voltages, currents, etc. to the test structures on the wafer.
The probe station is used for bearing a wafer with a plurality of test structures; the wafer has a number of test structures, and both the wafer and the probe card are loaded on a probe station.
The testing device is used for detecting whether the wafer is qualified or not; in a preferred embodiment of the present invention, the testing device may be a tester.
The control module receives the initial position parameters of the test structure and controls the probe to be in contact with the test structure on the wafer according to the initial position parameters; and controlling the opening and closing of the testing device; specifically, the control module may receive an initial position parameter of the test structure sent from the outside or the test device, for example, the initial position parameter is input to the test device through manual input, and the test device sends the initial position parameter to the control module; alternatively, the initial position parameters may be entered directly into the control module via manual input, and so forth. The control module controls the probe to find the corresponding test structure on the wafer according to the initial position parameter so as to enable the test structure to be in contact with the test structure; after the probe is contacted with the corresponding test structure on the wafer, the control module controls the test device to be started; and after the test of the test device is finished, the control device controls the test device to be closed.
The position detection unit is used for detecting actual position data of the probe in contact with the test structure; the actual position data may be any form of data, such as electrical signals, pressure signals, etc., as long as various forms of data that can be used to determine the condition of the probe in contact with the test structure are applicable to the present invention.
And the judging module is used for judging whether the probe is in place in contact with the test structure according to the actual position data detected by the position detecting unit. And the control module controls the testing device to start or stop testing temporarily according to the judgment result obtained by the judgment module.
In a preferred embodiment of the present invention, if the determining module determines that the probe is in contact with the test structure, the determining module sends an opening signal to the control module, and the control module controls the test device to start testing after receiving the opening signal; if the judgment module judges that the probe is not in place in contact with the test structure, the test device can be temporarily stopped for testing in a manual mode; the judgment module can also be used for sending a temporary stop signal to the control module, and the control module controls the test device to temporarily stop testing after receiving the temporary stop signal.
In a preferred embodiment of the present invention, the wafer acceptance testing system further includes an alarm module, the alarm module is connected to the determination module, and the alarm module starts to alarm when receiving a signal that the determination module determines that the probe and the test structure are not in place.
Specifically, in a preferred embodiment of the present invention, the position detection unit includes: the pressure sensing module and the signal processing module;
the pressure sensing module is used for detecting the pressure applied to the probe due to the contact with the surface of the wafer and sending a pressure signal to the signal processing module; whether the probes are in contact with the test structure in place or not can be judged through the pressure sensed by the pressure sensing module, because the pressure applied to the probes is different due to the difference of the materials or the heights of the probes contacting the surface of the wafer, so that the reflected pressure signals are different; for the same test structure, if the pressure signal intensity received by the probe is different, the probe is not contacted with the corresponding test structure, namely the contact is not in place; or a standard pressure value can be preset, if the strength of the pressure signal received by the probe is different from the standard pressure value, the probe is not in contact with the test structure in place; if the strength of the pressure signal received by the probe is different from the standard pressure value for different test structures, the probe is not in contact with the test structure.
The signal processing module is used for collecting and amplifying pressure signals sent by the pressure sensor and sending the amplified pressure signals to the judging module;
and the judging module is used for receiving the amplified pressure signal sent by the signal processing module and starting to judge whether the probe is in place in contact with the test structure. The control module controls the testing device to start or stop testing according to the judgment result sent by the judgment module.
In a preferred embodiment of the present invention, the determination module determines whether the probe is in place in contact with the test structure according to the strength of the amplified pressure signal, which includes but is not limited to the following two ways:
the first mode is as follows: comparing whether the intensities of the amplified pressure signals are consistent; the same test structure is pointed out, and because the same test structure comprises the same material and/or the same height, the pressure applied to the probe is the same after the probe contacts the same test structure, and the reflected pressure signal strength is the same; if not, it indicates that the probe is not in contact with the corresponding test structure.
The second mode is as follows: presetting a standard pressure value, and then comparing whether the intensity of each amplified pressure signal is consistent with the preset standard pressure value by a signal processing module; if the two are consistent, the probe is in contact with the corresponding test structure, namely the probe is in contact with the test structure in place, and if the two are not consistent, the probe is not in contact with the test structure in place. The method can be applied to the condition that the test structures are the same, and can also be applied to the condition that the test structures are different; for example, when the test structures are different, the strength of the pressure signal received by the probe is inconsistent due to the difference of the height, the material and the like of the test structures, but if the strength is consistent with the standard pressure value, the probe is in contact with the test structures.
The two modes can be used independently or combined; for example, the strength of the amplified pressure signal is compared to determine whether the amplified pressure signal is consistent with a preset standard pressure value; this is due to: when the pressure signal intensities are consistent, each probe may contact the same wafer surface area with a non-test structure, and therefore, the pressure signal intensities need to be compared with a preset standard pressure value, so that the possibility is eliminated; for another example, a method of comparing with a preset standard pressure value may be directly adopted; of course, it is also possible if only the method of comparing the pressure signal strength is used.
The wafer acceptance test method of the present invention will be described in detail with reference to fig. 4 and the specific embodiment. FIG. 4 is a flowchart illustrating a wafer acceptance test method according to the present invention.
Referring to fig. 4, the wafer acceptance test method of the present invention includes the following steps:
step S01: loading the wafer and the probe card on a probe platform;
specifically, in the present invention, the probe card may be any shape, such as square, circular, etc., and in a preferred embodiment of the present invention, the probe card is circular, and the number of probes that can be loaded on the probe card may vary from 1 to 1000. The wafer has a plurality of test structures thereon.
Step S02: the control module receives initial position parameters of the test structure;
specifically, in the present invention, the control module may receive the initial position parameter of the test structure sent from the outside or the test device, for example, the initial position parameter is input to the test device through manual input, and the test device sends the initial position parameter to the control module; alternatively, the initial position parameters may be entered directly into the control module via manual input, and so forth. In a preferred embodiment of the present invention, the initial position parameters of the test structure are received by the control module by manually inputting the initial position parameters into the test device and then sending the initial position parameters to the control module by the test device.
Step S03: the control module controls the probe on the probe card to contact with the test structure on the wafer according to the initial position parameter of the test structure;
step S04: the position detection unit detects actual position data of each probe in contact with the test structure and sends the actual position data to the judgment module;
here, the actual position data may include various data forms, and any data form may be applied to this step as long as it can be used to determine whether the probe is in contact with the test structure, such as a pressure signal, coordinates, and the like.
Specifically, in a preferred embodiment of the present invention, the position detection unit has a pressure sensing module and a signal processing module; the adopted actual position data is a pressure signal; the pressure to which the probe is subjected includes: different materials and/or different heights contacting the surface of the wafer. Then the step S04 may specifically include:
firstly, a pressure sensing module detects pressure applied to each probe in a probe card due to the fact that each probe contacts the surface of a wafer, and sends a pressure signal to a signal processing module;
and secondly, the signal processing module collects and amplifies the pressure signal sent by the pressure sensor and sends the amplified pressure signal to the judging module.
Step S05: the judging module judges whether the probe is in place in contact with the test structure according to the actual position data sent by the position detecting unit; and the control module controls the testing device to start or stop testing temporarily according to the judgment result obtained by the judgment module.
Specifically, in a preferred embodiment of the present invention, the method for determining whether the probe contacts the test structure in place by the determining module can be implemented by determining whether the amplified pressure signals have the same intensity; and/or presetting a standard pressure value, and judging whether the pressure signal intensity is consistent with the preset standard pressure value or not. The specific reasons have been explained in the foregoing, and are not described in detail herein.
If yes, the judging module sends an opening signal to the control module; after the control module receives the starting signal, the control module controls the testing device to start testing;
specifically, when the judging module judges that the probe is in place in contact with the test structure, the judging module sends an opening signal to the control module; the control module receives the starting signal and controls the testing device to start testing; and after the test is finished, the control module controls the test device to be closed.
In the invention, the judging module can be connected with an alarm module, when the judging module judges that the probe is not in contact with the test structure in place, namely not in contact with the corresponding test structure, the test device can temporarily stop testing in a manual mode; or a temporary stop signal can be sent to the control module through the judgment module, and a signal that the probe is not in place in contact with the test structure is sent to the alarm module; the alarm module starts to alarm after receiving a signal that the probe is not in contact with the test structure in place; after receiving the temporary stop signal, the control module controls the test device to temporarily stop testing; then, after the initial position parameters of the test structure are checked and corrected, the processes S02 and S05 are repeated until the judgment module judges that the probe is in place in contact with the test structure, then the control module controls the test device to start testing, and after the testing is finished, the control module controls the test device to close. Here, the checking and correcting of the initial position parameter may be performed manually. The invention is not limited in this regard.
It should be noted that the fact that the probe is in contact with the test structure means that the probe is in contact with the corresponding test structure, in other words, the probe is in contact with the test structure that should be contacted, but not in contact with other areas on the wafer.
After the test is completed, other related processes for completing the test, such as a process of checking the test data, may also be included.
In summary, the wafer acceptance test system and the wafer acceptance test method of the invention detect the actual position data of the probe in contact with the test structure through the position detection unit, and judge whether the probe is in place in contact with the test structure according to the actual position data by using the judgment module, so that the contact condition of the probe and the test structure can be detected before the test device performs the test, if the probe is not in correct contact, for example, all or part of the probe is not in contact with the test structure, the initial position parameter of the test structure on the wafer can be checked and corrected in time, thereby ensuring the quality of the subsequent test process of the test device, improving the test efficiency, avoiding the problem of device failure caused by the contact of the probe with other circuit parts on the wafer, and improving the yield of the device.
Although the present invention has been described with reference to preferred embodiments, which are illustrated for the purpose of illustration only and not for the purpose of limitation, it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
1. A wafer acceptance test system comprising:
a probe card loaded with a plurality of probes;
the probe station is used for bearing a wafer with a plurality of test structures;
the testing device is used for detecting whether the wafer is qualified or not;
the control module receives initial position parameters of the test structure and controls the probe to be in contact with the test structure on the wafer according to the initial position parameters; controlling the opening and closing of the testing device;
it is characterized by also comprising:
the position detection unit is used for detecting actual position data of the probe in contact with the test structure;
the judging module is used for judging whether the probe is in place in contact with the test structure according to the actual position data detected by the position detecting unit;
the control module controls the test device to start or temporarily stop testing according to the judgment result obtained by the judgment module;
the position detection unit includes: the pressure sensing module and the signal processing module; the actual position data takes the form of a pressure signal; wherein,
the pressure sensing module is used for detecting the pressure applied to the probe due to the fact that the probe is in contact with the surface of the wafer and sending a pressure signal to the signal processing module;
the signal processing module is used for collecting and amplifying the pressure signal sent by the pressure sensing module and sending the amplified pressure signal to the judging module;
the judging module is used for receiving the amplified pressure signals sent by the signal processing module and comparing whether the intensities of the amplified pressure signals are consistent or not, if not, the probe is not contacted with the corresponding test structure; if the amplified pressure signals are consistent with the preset standard pressure value, the judgment module compares whether the intensity of each amplified pressure signal is consistent with the preset standard pressure value, so that the possibility that each probe is contacted with the same wafer surface area with a non-test structure is eliminated.
2. The wafer acceptance test system of claim 1 wherein the wafer acceptance test system further comprises an alarm module, the alarm module being connected to the determination module; and the alarm module starts to alarm when receiving a signal that the judgment module judges that the probe is not in place in contact with the test structure. .
3. The wafer acceptance test system of claim 1 wherein the pressure to which the probe is subjected comprises: different materials and/or different heights contacting the surface of the wafer are subjected to different pressures.
4. A wafer acceptance test method, comprising:
step S01: loading the wafer and the probe card on a probe platform;
step S02: the control module receives initial position parameters of the test structure;
step S03: the control module controls the probe on the probe card to contact with the test structure on the wafer according to the initial position parameter of the test structure;
step S04: the position detection unit detects actual position data of each probe in contact with the test structure and sends the actual position data to the judgment module; the pressure sensing module is used for detecting the pressure of each probe in the probe card due to the fact that each probe contacts the surface of the wafer, and sending a pressure signal to the signal processing module; the signal processing module collects and amplifies the pressure signal sent by the pressure sensor and sends the amplified pressure signal to the judging module;
step S05: the judging module judges whether the probe is in place in contact with the test structure according to the actual position data sent by the position detecting unit; the judging module receives the amplified pressure signals sent by the signal processing module, compares whether the intensities of the amplified pressure signals are consistent or not, and if not, indicates that the probe is not in contact with a corresponding test structure; if the pressure signals are consistent, the signal processing module compares whether the intensity of each amplified pressure signal is consistent with a preset standard pressure value or not, so that the possibility that each probe is contacted with the same wafer surface area with a non-test structure is eliminated; and the control module controls the test device to start or temporarily stop testing according to the judgment result obtained by the judgment module.
5. The wafer acceptance test method as claimed in claim 4, wherein the determining module is connected to an alarm module, and the step S05 specifically includes:
the judging module judges whether the probe is in place in contact with the test structure according to the actual position data sent by the position detecting unit;
if yes, the judging module sends a starting signal to the control module; after the control module receives the starting signal, the test device is controlled to start testing;
if not, the judging module sends a temporary stop signal to the control module and simultaneously sends a signal that the probe is not in place in contact with the test structure to an alarm module; the alarm module starts to alarm after receiving a signal that the probe is not in contact with the test structure in place; after the control module receives the temporary stop signal, the control module controls the test device to temporarily stop testing; after checking and correcting the initial position parameters of the test structure, the steps S02-S05 are repeated.
6. The wafer acceptance test method of claim 4 wherein the pressure to which the probe is subjected includes: different materials and/or different heights contacting the surface of the wafer are subjected to different pressures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410286810.8A CN104049197B (en) | 2014-06-24 | 2014-06-24 | Wafer permits Acceptance Tests system and Acceptable testing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410286810.8A CN104049197B (en) | 2014-06-24 | 2014-06-24 | Wafer permits Acceptance Tests system and Acceptable testing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104049197A CN104049197A (en) | 2014-09-17 |
| CN104049197B true CN104049197B (en) | 2017-12-15 |
Family
ID=51502287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410286810.8A Active CN104049197B (en) | 2014-06-24 | 2014-06-24 | Wafer permits Acceptance Tests system and Acceptable testing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104049197B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI528041B (en) * | 2015-04-30 | 2016-04-01 | The method of adjusting the displacement distance of the probe according to the horizontal position of the plurality of points to be measured | |
| CN108172154B (en) * | 2018-01-03 | 2021-03-19 | 惠科股份有限公司 | Test method and test equipment |
| CN109030888A (en) * | 2018-07-18 | 2018-12-18 | 郑州云海信息技术有限公司 | A kind of probe load-bearing monitor method and pressure-sensitive probe |
| CN109444713A (en) * | 2018-11-13 | 2019-03-08 | 无锡中微腾芯电子有限公司 | A kind of wafer test contact fault diagnostic method |
| CN109490743A (en) * | 2019-01-16 | 2019-03-19 | 大连芯冠科技有限公司 | semiconductor wafer PCM test method |
| CN112114238A (en) * | 2019-06-19 | 2020-12-22 | 矽电半导体设备(深圳)股份有限公司 | Wafer test system |
| CN110361569A (en) * | 2019-07-26 | 2019-10-22 | 云谷（固安）科技有限公司 | A kind of probe assembly and test device |
| US20220397601A1 (en) * | 2021-06-11 | 2022-12-15 | Nanya Technology Corporation | Test system and test method to a wafer |
| CN113759228A (en) * | 2021-09-10 | 2021-12-07 | 长江存储科技有限责任公司 | Acceptance test system and method |
| CN115113011B (en) * | 2022-06-17 | 2023-06-13 | 上海泽丰半导体科技有限公司 | Probe card travel compensation system and method |
| CN118858875B (en) * | 2024-09-26 | 2025-02-07 | 合肥喆塔科技有限公司 | Method, device, equipment and storage medium for detecting probe card in WAT test |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW569017B (en) * | 2002-09-13 | 2004-01-01 | Chien Hui Chuan | Vertical probe card with feedback contact force sensor |
| CN1948981A (en) * | 2005-10-14 | 2007-04-18 | 上海华虹Nec电子有限公司 | High speed Acceptable testing process for wafer |
| CN101996398A (en) * | 2009-08-12 | 2011-03-30 | 睿励科学仪器（上海）有限公司 | Image matching method and equipment for wafer alignment |
| CN102509709A (en) * | 2011-09-02 | 2012-06-20 | 致茂电子(苏州)有限公司 | Point measurement device for LED (light-emitting diode) crystalline grain point measurement equipment |
| CN102707215A (en) * | 2012-05-22 | 2012-10-03 | 上海宏力半导体制造有限公司 | Testing method of wafer |
| CN103308840A (en) * | 2013-05-23 | 2013-09-18 | 上海华力微电子有限公司 | Wafer acceptance test method |
-
2014
- 2014-06-24 CN CN201410286810.8A patent/CN104049197B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW569017B (en) * | 2002-09-13 | 2004-01-01 | Chien Hui Chuan | Vertical probe card with feedback contact force sensor |
| CN1948981A (en) * | 2005-10-14 | 2007-04-18 | 上海华虹Nec电子有限公司 | High speed Acceptable testing process for wafer |
| CN101996398A (en) * | 2009-08-12 | 2011-03-30 | 睿励科学仪器（上海）有限公司 | Image matching method and equipment for wafer alignment |
| CN102509709A (en) * | 2011-09-02 | 2012-06-20 | 致茂电子(苏州)有限公司 | Point measurement device for LED (light-emitting diode) crystalline grain point measurement equipment |
| CN102707215A (en) * | 2012-05-22 | 2012-10-03 | 上海宏力半导体制造有限公司 | Testing method of wafer |
| CN103308840A (en) * | 2013-05-23 | 2013-09-18 | 上海华力微电子有限公司 | Wafer acceptance test method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104049197A (en) | 2014-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104049197B (en) | Wafer permits Acceptance Tests system and Acceptable testing process | |
| US6191596B1 (en) | Method for detecting a contact position between an object to be measured and measuring pins | |
| US7504844B2 (en) | Inspection apparatus and method | |
| US20090284277A1 (en) | Probe apparatus and method for correcting contact position | |
| KR20100074345A (en) | Measuring apparatus for warpage wafer and method thereof | |
| US7783938B1 (en) | Result directed diagnostic method and system | |
| US6697691B1 (en) | Method and apparatus for fault model analysis in manufacturing tools | |
| KR20150117153A (en) | Method of testing pattern reliability and method of testing semiconductor device using them | |
| CN112731241A (en) | Calibration tool and calibration method for wafer test machine | |
| JP2005150224A (en) | Semiconductor testing apparatus using probe information and testing method | |
| CN110057330B (en) | Line width measuring method and line width measuring system | |
| JPH0441495B2 (en) | ||
| TW201409048A (en) | Apparatus and method for inspection of marking | |
| US7042237B2 (en) | Semiconductor test system having a tester and a prober and test method thereof | |
| US8878561B2 (en) | Screening method, screening device and program | |
| KR20180051731A (en) | System and Method for Detecting Degradation Trend of Arm Blade for Wafer Transfer Robot | |
| JP5507165B2 (en) | Inspection device and pass / fail judgment device | |
| CN118501670B (en) | Wafer retest method, wafer test system, test machine and readable storage medium | |
| KR100568513B1 (en) | Semiconductor inspection device | |
| CN113253006A (en) | Detection method and device for bill module bottom plate, computer equipment and storage medium | |
| CN106709410B (en) | Global detection method and detection device of fingerprint sensor | |
| TWI811932B (en) | Sensor chip calibration device and sensor chip calibration method | |
| KR100465760B1 (en) | Method and system for testing of semiconductor wafer | |
| JP2002277507A (en) | Semiconductor tester | |
| KR102436455B1 (en) | Apparatus and Method for Inspection of Pattern, and System Using the Same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |