CN104022048A - Method for monitoring ion implantation angle - Google Patents
Method for monitoring ion implantation angle Download PDFInfo
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- CN104022048A CN104022048A CN201310066900.1A CN201310066900A CN104022048A CN 104022048 A CN104022048 A CN 104022048A CN 201310066900 A CN201310066900 A CN 201310066900A CN 104022048 A CN104022048 A CN 104022048A
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- monitoring
- ion
- wafer
- ion implantation
- implantation angle
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 60
- 238000005468 ion implantation Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 24
- 235000012431 wafers Nutrition 0.000 claims abstract description 75
- 238000001228 spectrum Methods 0.000 claims description 26
- 239000007943 implant Substances 0.000 claims description 18
- 238000002513 implantation Methods 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000004904 shortening Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 37
- 239000013078 crystal Substances 0.000 description 7
- -1 boron ion Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention provides a method for monitoring an ion implantation angle. A plurality of standard piece wafers and a plurality of monitoring piece wafers are provided, heat maps of the standard piece wafers and the monitoring piece wafers are measured, difference of the heat maps of the standard piece wafers and the monitoring piece wafers at the same ion implantation angle is compared, and accuracy of ion implantation angle is judged accordingly, thereby shortening monitoring time, and improving the utilization rate of an ion implanter.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method of monitoring ion implantation angle.
Background technology
Implantation is a kind of very important technology during modern integrated circuits is manufactured, it utilizes ion implantor to realize semi-conductive doping, is about to change its conductive characteristic in the mode Implanted Silicon semiconductor crystal of specific foreign atom with ion acceleration and also finally forms transistor arrangement.
The accurate location of impurity is the key factor that guarantees advanced device optimal operational condition.For Implantation, dosage, energy and ion implantation angle all need accurate control, and the transistorized performance that guarantee forms meets technological requirement.Ion implantation angle difference will cause the Implantation degree of depth change and affect the electrical quantity of device, therefore, ion implantation angle is carried out to accurate control very necessary.In some advanced technologies important implanted layer as light dope seepage (LDD) layer or bag (PKT) implanted layer very responsive to the angle of Implantation, now the error of ion implantation angle will cause negative impact to drive current (ION) and cut-off leakage current (IOFF).
Yet ion implantor, producing deviation through after the operation of certain hour, inevitably causes ion implantation angle to have deviation.Therefore, need the angle that monitoring ion injects termly, to guarantee that ion implantor is within meeting the scope of technological requirement.
In the prior art, in the time of in the scope at ion implantor in meeting technological requirement, the angle that the Implantation of first take is 0 degree is made a slice standard film wafer.When ion implantor is after operation a period of time, need to monitor it whether within the scope in meeting technological requirement time, re-using ion implantor take the angle that Implantation is 0 degree and makes a slice monitoring wafer, then again monitoring wafer and standard film wafer are done to secondary ion mass spectroscopy (Secondary Ion Mass Spectroscopy simultaneously, be called for short SIMS) contrast, if the figure trend of the sims analysis obtaining is consistent, be both zero deflections, show that the ion implantation angle of current ion implantor is within the scope of technological requirement, otherwise, there is deviation in the ion implantation angle that shows current ion implantor, need to carry out certain calibration to ion implantor.
Yet sims analysis generally needs just can obtain a result for 4 to 6 hours, this,, by causing the utilance of ion implantor greatly to reduce, affects production capacity.
Summary of the invention
The object of the invention is to propose a kind of method of monitoring ion implantation angle, to shorten monitoring time, improve the utilance of ion implantor.
To achieve these goals, the present invention proposes a kind of method of monitoring ion implantation angle, comprises step:
At least one standard film wafer and at least one monitoring wafer are provided, when ion implantor is in technique normal range (NR) situation, by the Implantation of predetermined power, predetermined close and predetermined implant angle in described at least one standard film wafer, after ion implantor operation a period of time, by the Implantation of described predetermined power, described predetermined close and described predetermined implant angle in described at least one monitoring wafer;
The thermal map spectrum of measuring respectively described standard film wafer and described monitoring wafer, contrasts the difference of described standard film wafer and described monitoring wafer thermal map spectrum, and judges the accuracy of ion implantation angle with this.
Further, use thermal wave meter to measure the thermal map spectrum of described standard film wafer and described monitoring wafer.
Further, described ion is boron ion.
Further, the predetermined power scope of described ion is 80Kev～120Kev.
Further, the predetermined close scope of described ion be 2E13 atom/centimetre
2～8E13 atom/centimetre
2.
Further, a plurality of standard film wafers and a plurality of monitoring wafer are provided, at ion implantor in technique normal range (NR) situation, use different predetermined implant angles to inject different described standard film wafers in the ion of described predetermined power and described predetermined close, at ion implantor, after operation a period of time, use different predetermined implant angles to inject different described monitoring wafer in the ion of described predetermined power and described predetermined close.
Further, described predetermined ion implantation angle scope is 0 degree～1 degree.
Further, described standard film wafer and monitoring wafer are 4.
Further, the predetermined implant angle of described 4 standard films and 4 monitoring wafer is respectively 0 degree, 0.1 degree, 0.2 degree and 0.5 degree.
Compared with prior art, beneficial effect of the present invention is mainly reflected in: a plurality of standard film wafers and a plurality of monitoring wafer are provided, measure respectively the thermal map spectrum of described standard film wafer and described monitoring wafer, the difference of described standard film wafer and described monitoring wafer thermal map spectrum under contrast same ion implant angle, and judge the accuracy of ion implantation angle with this, thereby shortening monitoring time, the utilance of raising ion implantor.
Accompanying drawing explanation
Fig. 1 is the method flow diagram of monitoring ion implantation angle in one embodiment of the invention.
Embodiment
For the ease of understanding, below in conjunction with specific embodiment and accompanying drawing, the present invention will be further described.
Please refer to Fig. 1, a kind of method of monitoring ion implantation angle, comprises,
Step S100: at least one standard film wafer and at least one monitoring wafer are provided, when ion implantor is in technique normal range (NR) situation, by the Implantation of predetermined power, predetermined close and predetermined implant angle in described at least one standard film wafer, after ion implantor operation a period of time, by the Implantation of described predetermined power, described predetermined close and described predetermined implant angle in described at least one monitoring wafer;
Step S200: measure respectively the thermal map spectrum of described standard film wafer and described monitoring wafer, contrast the difference of described standard film wafer and described monitoring wafer thermal map spectrum, and judge the accuracy of ion implantation angle with this.
The present invention uses thermal wave meter to measure the thermal map spectrum of described standard film wafer and described monitoring wafer, the basic principle that thermal wave meter is measured is according to the variation of surface reflectivity, determine the degree that crystal column surface damages, therefore, the monitoring of relevant ion implantor can be reflected by the thermal map spectrum value of reading that detects crystal column surface.In the situation that same Implantation Energy and dosage, when ion implantation angle is larger, (implant angle refers to the angle of Implantation direction and crystal column surface,, implant angle minimum (0 degree) when Implantation direction is parallel with crystal column surface, implant angle maximum (90 degree) when Implantation direction is vertical with crystal column surface, the amount of ions and the energy that are injected in wafer are larger, and the damage that crystal column surface is caused is larger, and correspondingly the thermal map spectrum value of reading is larger.That is, from the thermal map spectrum value of reading, under certain condition, the thermal map spectrum value of reading is larger, and ion implantation angle is also larger.
In the present embodiment, described ion can be boron ion; The energy range of described ion is 80Kev～120Kev; The dosage range of described ion be 2E13 atom/centimetre
2～8E13 atom/centimetre
2; Described ion implantation angle scope is 0 degree～1 degree, and minimum precision is 0.1 degree.Preferably, provide a plurality of standard film wafers and a plurality of monitoring wafer to carry out the monitoring of ion implantation angle.For the ease of better understanding, illustrate below, get 4 standard film wafers and 4 monitoring wafer, at ion implantor in technique normal range (NR) in the situation that, use energy for 100Kev and dosage range for 5E13 atom/centimetre
2boron ion, and adopt ion implantation angle be 0 degree, 0.1 degree, 0.2 degree and 0.5 degree implant angle inject respectively in 4 standard film wafers, using these 4 standard film wafers as benchmark, use thermal wave meter to measure the thermal map spectrum of 4 described standard film wafers, thereby show that ion implantation angle is that the thermal map spectrum value of 0 degree is 751.69, ion implantation angle is that the thermal map spectrum value of 0.1 degree is 756.31, ion implantation angle is that the thermal map spectrum value of 0.2 degree is 763.93, and ion implantation angle is that the thermal map spectrum value of 0.5 degree is 767.82.After ion implantor operation a period of time, use energy for 100Kev and dosage range for 5E13 atom/centimetre
2boron ion, adopting ion implantation angle is that 0 degree, 0.1 degree, 0.2 degree and 0.5 implant angle of spending inject respectively in 4 monitoring wafer, and use thermal wave meter to measure the thermal map spectrum of 4 monitoring wafer, under identical ion implantation angle, compare with the thermal map spectrum of 4 described standard film wafers respectively, for example, if deviation large (deviation surpasses 4), illustrates that ion implantor does not meet the requirement of technique.For example, measurement ion implantation angle is that the thermal map spectrum value of the monitoring wafer of 0 degree is greater than 756.31, illustrates that ion implantation angle has in fact been greater than 0.1 and has spent (having occurred that deviation is greater than 0.1 degree), should do corresponding maintenance to ion implantor.
At present, the deviation acceptable scope of ion implantation angle is less than 0.1 degree, that is to say, when ion implantation angle deviation is spent over 0.1, ion implantor just should be shut down and be done corresponding maintenance and calibration.When ion implantation angle is 0 while spending; if the monitoring thermal map spectrum value of wafer and the thermal map spectrum value of standard film wafer differ larger; when even approaching or surpassing ion implantation angle and be the thermal map spectrum value of standard film wafer of 0.1 degree; the deviation that ion implantation angle is described has approached or has surpassed 0.1 degree, and now ion implantor just should be shut down and be done corresponding maintenance and calibration.
These are only the preferred embodiments of the present invention, the present invention is not played to any restriction.Any person of ordinary skill in the field; within not departing from the scope of technical scheme of the present invention; the technical scheme that the present invention is disclosed and technology contents are made any type of changes such as replacement or modification that are equal to; all belong to the content that does not depart from technical scheme of the present invention, within still belonging to protection scope of the present invention.
Claims (9)
1. a method for monitoring ion implantation angle, comprises step:
At least one standard film wafer and at least one monitoring wafer are provided, when ion implantor is in technique normal range (NR) situation, by the Implantation of predetermined power, predetermined close and predetermined implant angle in described at least one standard film wafer, after ion implantor operation a period of time, by the Implantation of described predetermined power, described predetermined close and described predetermined implant angle in described at least one monitoring wafer;
The thermal map spectrum of measuring respectively described standard film wafer and described monitoring wafer, contrasts the difference of described standard film wafer and described monitoring wafer thermal map spectrum, and judges the accuracy of ion implantation angle with this.
2. the method for monitoring ion implantation angle as claimed in claim 1, is characterized in that: use thermal wave meter to measure the thermal map spectrum of described standard film wafer and described monitoring wafer.
3. the method for monitoring ion implantation angle as claimed in claim 1, is characterized in that: described ion is boron ion.
4. the method for monitoring ion implantation angle as claimed in claim 3, is characterized in that: the predetermined power scope of described ion is 80Kev～120Kev.
5. the method for monitoring ion implantation angle as claimed in claim 4, is characterized in that: the predetermined close scope of described ion be 2E13 atom/centimetre
2～8E13 atom/centimetre
2.
6. the method for monitoring ion implantation angle as claimed in claim 1, it is characterized in that: a plurality of standard film wafers and a plurality of monitoring wafer are provided, at ion implantor in technique normal range (NR) situation, use different predetermined implant angles to inject different described standard film wafers in the ion of described predetermined power and described predetermined close, at ion implantor, after operation a period of time, use different predetermined implant angles to inject different described monitoring wafer in the ion of described predetermined power and described predetermined close.
7. the method for monitoring ion implantation angle as claimed in claim 6, is characterized in that: described predetermined ion implantation angle scope is 0 degree～1 degree.
8. the method for monitoring ion implantation angle as claimed in claim 7, is characterized in that: described standard film wafer and monitoring wafer are 4.
9. the method for monitoring ion implantation angle as claimed in claim 8, is characterized in that: the predetermined implant angle of described 4 standard films and 4 monitoring wafer is respectively 0 degree, 0.1 degree, 0.2 degree and 0.5 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310066900.1A CN104022048A (en) | 2013-03-01 | 2013-03-01 | Method for monitoring ion implantation angle |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310066900.1A CN104022048A (en) | 2013-03-01 | 2013-03-01 | Method for monitoring ion implantation angle |
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| CN104022048A true CN104022048A (en) | 2014-09-03 |
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| CN201310066900.1A Pending CN104022048A (en) | 2013-03-01 | 2013-03-01 | Method for monitoring ion implantation angle |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854033A (en) * | 2019-11-25 | 2020-02-28 | 上海华力微电子有限公司 | Ion implantation angle deviation monitoring method and system |
| CN113984788A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through optical detection instrument |
| CN113984870A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through SIMS |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451529A (en) * | 1994-07-05 | 1995-09-19 | Taiwan Semiconductor Manufacturing Company | Method of making a real time ion implantation metal silicide monitor |
| US20030224541A1 (en) * | 2002-05-29 | 2003-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of monitoring high tilt angle of medium current implant |
| US20060138357A1 (en) * | 2004-12-29 | 2006-06-29 | Dongbuanam Semiconductor Inc. | Method for fabricating a metal-insulator-metal capacitor |
| KR100699889B1 (en) * | 2005-12-29 | 2007-03-28 | 삼성전자주식회사 | Method for manufacturing semiconductor device with variable ion implantation conditions |
| CN101651086A (en) * | 2008-08-15 | 2010-02-17 | 和舰科技(苏州)有限公司 | Method for monitoring ion implantation angle |
-
2013
- 2013-03-01 CN CN201310066900.1A patent/CN104022048A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451529A (en) * | 1994-07-05 | 1995-09-19 | Taiwan Semiconductor Manufacturing Company | Method of making a real time ion implantation metal silicide monitor |
| US20030224541A1 (en) * | 2002-05-29 | 2003-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of monitoring high tilt angle of medium current implant |
| US20060138357A1 (en) * | 2004-12-29 | 2006-06-29 | Dongbuanam Semiconductor Inc. | Method for fabricating a metal-insulator-metal capacitor |
| KR100699889B1 (en) * | 2005-12-29 | 2007-03-28 | 삼성전자주식회사 | Method for manufacturing semiconductor device with variable ion implantation conditions |
| CN101651086A (en) * | 2008-08-15 | 2010-02-17 | 和舰科技(苏州)有限公司 | Method for monitoring ion implantation angle |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854033A (en) * | 2019-11-25 | 2020-02-28 | 上海华力微电子有限公司 | Ion implantation angle deviation monitoring method and system |
| CN113984788A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through optical detection instrument |
| CN113984870A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through SIMS |
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Application publication date: 20140903 |
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