CN104020407B - A kind of method of testing of Integrated circuit electrostatic barrier propterty - Google Patents
A kind of method of testing of Integrated circuit electrostatic barrier propterty Download PDFInfo
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- CN104020407B CN104020407B CN201310066664.3A CN201310066664A CN104020407B CN 104020407 B CN104020407 B CN 104020407B CN 201310066664 A CN201310066664 A CN 201310066664A CN 104020407 B CN104020407 B CN 104020407B
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Abstract
The invention discloses the method for testing of a kind of Integrated circuit electrostatic barrier propterty, including simulating various different working environment, and IC is carried out the test of electrostatic defending performance in these various different working environments.Whether the present invention can all meet the requirement of relevant criterion by the tested IC of comprehensive assessment in various different working environments.
Description
Technical field
The present invention relates to integrated circuit fields, be specifically related to the method for testing of a kind of IC electrostatic defending performance.
Background technology
Integrated circuit (Integrated Circuit, IC) is to utilize semiconductor fabrication process will constitute certain function
Electronic circuit needed for resistance, electric capacity, the element such as semiconductor device and the connection wire between them integrated
On a fritter silicon chip, it is then encapsulated in the electronic device in a shell.Along with super large-scale integration
The development of technique, the characteristic size of IC has reached the deep-submicron stage, but the reduction of IC size makes IC
Device becomes more sensitive to static discharge (Electrostatic Discharge, ESD), the IC that ESD causes
Product failure problem is more and more prominent.
In order to the IC product low to electrostatic defending performance is optimized design, promote the quality of IC product, IC
Producer needs to test the electrostatic defending performance of IC product, to assess whether its electrostatic defending performance meets
Relevant criterion.The most common IC electrostatic defending performance test methods has, IC put into plastic bag blow,
The methods such as the backward resistance rubbing or surveying IC, and assess its electrostatic defending performance by these methods, but this
A little methods all do not have standard foundation, and experience can only be relied on to judge, lack of standardization.Same IC is in different uses
In environment, under different temperature environments, its electrostatic defending performance is the most incomplete same, therefore uses above-mentioned
The electrostatic defending Performance Evaluation that method is carried out is comprehensive, even if using above-mentioned method of testing to assess qualified IC
After batch production, it is possible to there is the problem that electrostatic breakdown etc. occurs when using in different environment,
Cause the loss of IC producer.
Summary of the invention
Embodiments provide the method for testing of a kind of Integrated circuit electrostatic barrier propterty, it is possible to Quan Mianping
Estimate the electrostatic defending performance of integrated circuit.
The application first method provides the method for testing of a kind of Integrated circuit electrostatic barrier propterty, including:
Under the first temperature conditions, electro-static discharging generator is arranged under the first test condition tested integrated
Circuit carries out the electrostatic discharge testing under the first working environment, and wherein, described first test condition is: by institute
The output voltage stating electro-static discharging generator is set to the first voltage, the static gun of described electro-static discharging generator
Head contacts an input and output I/O foot of described tested integrated circuit, remaining I/O of described tested integrated circuit
Foot ground connection；
After electrostatic discharge testing under described first working environment, detect whether described tested integrated circuit loses
Effect；
If described tested integrated circuit did not lost efficacy, then, under the first temperature conditions, described static discharge is occurred
Device is arranged under the second test condition and described tested integrated circuit is carried out the static discharge under the second working environment
Test, wherein, described second test condition is: be set to by the output voltage of described electro-static discharging generator
Second voltage, an I/O of the nearly described tested integrated circuit of static gun head rest of described electro-static discharging generator
Foot, remaining I/O foot ground connection of described tested integrated circuit, the absolute value of described second voltage is more than described first
Voltage；
After electrostatic discharge testing under described second working environment, detect whether described tested integrated circuit loses
Effect；
If described tested integrated circuit did not lost efficacy, then, under the second temperature conditions, electro-static discharging generator is divided
It is not arranged under described first test condition and described second test condition and tested integrated circuit is carried out the 3rd work
Making the electrostatic discharge testing under environment, wherein, described second temperature is less than described first temperature；
After electrostatic discharge testing under described 3rd working environment, detect whether described tested integrated circuit loses
Effect；
If described tested integrated circuit did not lost efficacy, then, under the 3rd temperature conditions, electro-static discharging generator is divided
It is not arranged under described first test condition and described second test condition and tested integrated circuit is carried out the 4th work
Making the electrostatic discharge testing under environment, wherein, described 3rd temperature is more than described first temperature；
Detect whether described tested integrated circuit lost efficacy；
If described tested integrated circuit did not lost efficacy, it is determined that the electrostatic defending performance of described tested integrated circuit is surveyed
Pinged.
In the implementation that the first is possible, described first test condition also includes, by described static discharge
The static discharge number of times of generator is set at least twice, and the discharge capacity of described electro-static discharging generator is arranged
For 100pf, the discharge resistance of described electro-static discharging generator is set to 1.5K Ω.
In conjunction with the first possible implementation of first aspect or first aspect, in the reality that the second is possible
In existing mode, before described tested integrated circuit is carried out the electrostatic discharge testing under the first working environment,
Described method also includes,
The performance detecting described tested integrated circuit is the most qualified；
If described tested performance of integrated circuits is qualified, then triggers described under the first temperature conditions, electrostatic is put
Electric generator is arranged under the first test condition the electrostatic carried out tested integrated circuit under the first working environment and puts
The step of electrical testing.
In conjunction with the implementation that the second of first aspect is possible, in the implementation that the third is possible, institute
State and detect that the performance of described tested integrated circuit is the most qualified to be included:
Test described tested integrated circuit each I/O foot leakage current before carrying out electrostatic defending performance test and
I-V characteristic curve；
If the leakage current before described electrostatic defending performance test and I-V characteristic curve are at described data integrated circuit
In the parameter area that handbook is given, it is determined that the performance of described tested integrated circuit is qualified；
If described tested performance of integrated circuits is qualified, then record the described electrostatic defending performance of described each I/O foot
Leakage current before test and I-V characteristic curve.
In conjunction with the third possible implementation of first aspect, in the 4th kind of possible implementation, institute
State whether the described tested integrated circuit of detection lost efficacy, including:
Test described tested integrated circuit each I/O foot under carrying out described first working environment, the second building ring
The leakage current after electrostatic discharge testing under border, under the 3rd working environment or under the 4th working environment and I-V characteristic
Curve；
By the leakage current after the described electrostatic discharge testing on each I/O foot and I-V characteristic curve respectively with described
Leakage current and I-V characteristic curve before electrostatic defending performance test contrast；
If the leakage current before the leakage current after described electrostatic discharge testing on each I/O foot and described test
The skew of the I-V characteristic curve before difference, the I-V characteristic curve after described electrostatic discharge testing and described test
Amount is all in corresponding threshold range, it is determined that described tested integrated circuit did not lost efficacy.
In conjunction with the 4th kind of possible implementation of first aspect, in the 5th kind of possible implementation, institute
Stating the first temperature conditions is 20 DEG C～25 DEG C, and described second temperature conditions is 5 DEG C～15 DEG C, described 3rd temperature
Condition is 35 DEG C～45 DEG C.
In conjunction with the 5th kind of possible implementation of first aspect, in the 6th kind of possible implementation, institute
Stating the first voltage is ± 2KV, and described second voltage is ± 4KV.
The present invention is by simulating various different working environments, and to IC in these various different working environments
Carry out the test of comprehensive electrostatic defending performance, thus assess this IC whether in various different working environments
All meet the requirement of relevant criterion.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to enforcement
In example or description of the prior art, the required accompanying drawing used is briefly described, it should be apparent that, describe below
In accompanying drawing be only some embodiments of the present invention, for those of ordinary skill in the art, do not paying
On the premise of going out creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the flow process of the method for testing of a kind of Integrated circuit electrostatic barrier propterty that the embodiment of the present invention provides
Figure.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clearly
Chu, be fully described by, it is clear that described embodiment be only a part of embodiment of the present invention rather than
Whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not making creation
The every other embodiment obtained under property work premise, broadly falls into the scope of protection of the invention.
Refer to the test that Fig. 1, Fig. 1 are a kind of Integrated circuit electrostatic barrier propterties that the embodiment of the present invention provides
The flow chart of method, as it is shown in figure 1, the method includes:
101, under the first temperature conditions, electro-static discharging generator is arranged under the first test condition tested
Integrated circuit carries out the electrostatic discharge testing under the first working environment, and wherein, the first test condition is: by quiet
The output voltage of discharge of electricity generator is set to the first voltage, the static gun head contact quilt of electro-static discharging generator
Survey an I/O foot of integrated circuit, remaining I/O foot ground connection of tested integrated circuit.
Wherein, this step is the electrostatic discharge testing carried out tested integrated circuit under the first working environment,
First working environment is: under the first temperature conditions and electro-static discharging generator is arranged on the first test condition.
Electro-static discharging generator is used for the static discharge phenomenon during simulating reality is lived, electro-static discharging generator bag
Include electrostatic generator and static gun.The output of electrostatic generator i.e. has the most also to be had negative, has plenty of and positive and negative can turn
Changing, their voltage bipole high accuracy output continuously adjustabe, electro-static discharging generator can be used for the overwhelming majority
Electrically and the ESD test of electronic equipment.
Wherein, this step is contact-type electrostatic discharge test, and the static gun head of electro-static discharging generator needs to connect
Touch an I/O foot of tested integrated circuit.
Alternatively, the first test condition can also include, is set by the static discharge number of times of electro-static discharging generator
Being set at least twice, preferably 3 times, the discharge capacity of electro-static discharging generator is set to 100pf, and electrostatic is put
The discharge resistance of electric generator is set to 1.5K Ω.
Alternatively, the first temperature in the present embodiment refers under normal temperature condition, preferably 20 DEG C～25 DEG C.First electricity
Pressure is preferably ± 2KV, and 2KV is the pressure voltage of the contact-type electrostatic electric discharge that related industry standards requires.Due to
Accumulation of static electricity be probably positive or negative electric charge, it is therefore desirable to same IC is done the electrostatic of both positive and negative polarity
Discharge test.
Wherein, before carrying out electrostatic defending test, in order to the effectiveness of guarantee test can be first to tested IC
Carrying out performance checking, the performance detecting tested IC is the most qualified, if tested IC performance is qualified, then triggers step
Rapid 101, alternatively, the method detecting the performance of tested IC the most qualified can be:
Test tested integrated circuit each I/O foot leakage current before carrying out electrostatic defending performance test and I-V is special
Linearity curve；
If the leakage current before electrostatic defending performance test and I-V characteristic curve give at data integrated circuit handbook
Parameter area in, it is determined that the performance of tested integrated circuit is qualified；
If tested performance of integrated circuits is qualified, then record the electric leakage before the electrostatic defending performance test of each I/O foot
Stream and I-V characteristic curve.
102, after the electrostatic discharge testing under the first working environment, detect whether tested integrated circuit lost efficacy.
Wherein, detecting the method whether tested integrated circuit lost efficacy can be:
After testing tested integrated circuit each I/O foot electrostatic discharge testing under carrying out the first working environment
Leakage current and I-V characteristic curve；
By the leakage current after the electrostatic discharge testing on each I/O foot and I-V characteristic curve respectively with electrostatic defending
Leakage current and I-V characteristic curve before performance test contrast；
If the leakage current after electrostatic discharge testing on each I/O foot and the difference of the leakage current before test, electrostatic
I-V characteristic curve after discharge test with the side-play amount of I-V characteristic curve before test all at corresponding threshold value model
In enclosing, it is determined that this tested integrated circuit did not lost efficacy.
Such as, when the difference of the leakage current before the leakage current after electrostatic discharge testing with test is less than 1uA, quiet
Discharge of electricity test after I-V characteristic curve with test before I-V characteristic curve side-play amount be less than 30% can be true
This tested integrated circuit fixed did not lost efficacy.
Detect tested integrated circuit after electrostatic discharge testing under carrying out the first working environment and whether lost efficacy be for
Ensure the effectiveness of follow-up test, if lost after the electrostatic discharge testing that tested IC is under the first working environment
Effect then there is no need to carry out follow-up test again, and should be designed optimizing or change.
If 103 tested integrated circuits did not lost efficacy, then, under the first temperature conditions, electro-static discharging generator is set
Put and under the second test condition, tested integrated circuit is carried out the discharge test under the second working environment, wherein,
Second test condition is: the output voltage of electro-static discharging generator is set to the second voltage, and static discharge is sent out
One I/O foot of the nearly tested integrated circuit of static gun head rest of raw device, remaining I/O foot of tested integrated circuit connects
Ground, the absolute value of the second voltage is more than described first voltage.
Wherein, this step is the electrostatic discharge testing carried out tested integrated circuit under the second working environment,
Second working environment is: under the first temperature conditions and electro-static discharging generator is arranged on the second test condition.
Wherein, this step is non-contact-type electrostatic discharge test, and the static gun head of electro-static discharging generator needs
An I/O foot near tested integrated circuit.
Alternatively, the second test condition can also include, is set by the static discharge number of times of electro-static discharging generator
Being set at least twice, preferably 3 times, the discharge capacity of electro-static discharging generator is set to 100pf, and electrostatic is put
The discharge resistance of electric generator is set to 1.5K Ω.
Alternatively, in the present embodiment, the second voltage first is ± 4KV, and 4KV is that related industry standards requires
The pressure voltage of contactless static discharge.It is probably positive or negative electric charge due to accumulation of static electricity, therefore needs
Same IC is done the electrostatic discharge testing of both positive and negative polarity.
104, after the electrostatic discharge testing under the second working environment, detect whether tested integrated circuit lost efficacy.
The concrete side whether lost efficacy after detecting tested integrated circuit discharge test under carrying out the second working environment
Method, with reference to above-mentioned steps 102, repeats no more here.
If 105 tested integrated circuits did not lost efficacy, then under the second temperature conditions by electro-static discharging generator respectively
It is arranged under the first test condition and the second test condition and tested integrated circuit is carried out under the 3rd working environment
Discharge test, wherein, the second temperature is less than the first temperature.
Wherein, this step is the electrostatic discharge testing carried out tested integrated circuit under the 3rd working environment,
3rd working environment is: under the second temperature conditions and electro-static discharging generator be arranged on the first test condition or
Second test condition.
Alternatively, the second temperature in the present embodiment refers under cryogenic conditions, and preferably 5 DEG C～15 DEG C, test can
To carry out in cryostat.Under first test condition and the second test condition, the test to tested integrated circuit is joined
Examine above-mentioned steps, repeat no more here.
106, after the electrostatic discharge testing under the 3rd working environment, detect whether tested integrated circuit lost efficacy.
Wherein, whether lost efficacy after detecting tested integrated circuit discharge test under carrying out the 3rd working environment
Concrete grammar, with reference to above-mentioned steps 102, repeats no more here.
Preferably due to the reasons such as temperature drift can affect the parameter of IC, detecting tested integrated circuit in this step is
No inefficacy just should be carried out after tested IC takes out from cryostat after the Parameter reconstruction of tested IC is stable,
Can detect again after placing 2 hours in normal temperature environment.
If 107 tested integrated circuits did not lost efficacy, then under the 3rd temperature conditions by electro-static discharging generator respectively
It is arranged under the first test condition and the second test condition and tested integrated circuit is carried out under the 4th working environment
Discharge test, wherein, the 3rd temperature is more than the first temperature.
Wherein, this step is the electrostatic discharge testing carried out tested integrated circuit under the 4th working environment,
4th working environment is: under the 3rd temperature conditions and electro-static discharging generator be arranged on the first test condition or
Second test condition.
Alternatively, the 3rd temperature in the present embodiment refers under hot conditions, and preferably 35 DEG C～45 DEG C, test can
To carry out in high-temperature cabinet.Under first test condition and the second test condition, the test to tested integrated circuit is joined
Examine above-mentioned steps, repeat no more here.
108, after the electrostatic discharge testing under the 4th working environment, detect whether tested integrated circuit lost efficacy.
Wherein, whether lose after detecting tested integrated circuit electrostatic discharge testing under carrying out the 4th working environment
The concrete grammar of effect, with reference to above-mentioned steps 102, repeats no more here.
Preferably due to the reasons such as temperature drift can affect the parameter of IC, detecting tested integrated circuit in this step is
No inefficacy just should be carried out after tested IC takes out from high-temperature cabinet after the Parameter reconstruction of tested IC is stable,
Can detect again after placing 2 hours in normal temperature environment.
If 109 tested integrated circuits did not lost efficacy, it is determined that the electrostatic defending performance test of tested integrated circuit is led to
Cross.
Wherein, in above-mentioned steps, the order of the electrostatic discharge testing under the first working environment to the 4th working environment can
With change, it it is not the order being strictly defined as in the present embodiment.
The present embodiment is by simulating various different working environments and right in these various different working environments
IC carries out the test of comprehensive electrostatic defending performance, thus whether assesses this IC at various different working environments
In all meet the requirement of relevant criterion.The present embodiment can also accurately detect tested IC where working environment
Middle electrostatic defending performance is defective, thus improves targetedly.
Above disclosed be only present pre-ferred embodiments, certainly can not with this limit the present invention it
Interest field, the equivalent variations therefore made according to the claims in the present invention, still belong to the scope that the present invention is contained.
Claims (6)
1. the method for testing of an Integrated circuit electrostatic barrier propterty, it is characterised in that including:
Under the first temperature conditions, electro-static discharging generator is arranged under the first test condition tested integrated
Circuit carries out the electrostatic discharge testing under the first working environment, and wherein, described first test condition is: by institute
The output voltage stating electro-static discharging generator is set to the first voltage, the static gun of described electro-static discharging generator
Head contacts an input and output I/O foot of described tested integrated circuit, remaining I/O of described tested integrated circuit
Foot ground connection；
After electrostatic discharge testing under described first working environment, detect whether described tested integrated circuit loses
Effect；
If described tested integrated circuit did not lost efficacy, then, under the first temperature conditions, described static discharge is occurred
Device is arranged under the second test condition and described tested integrated circuit is carried out the static discharge under the second working environment
Test, wherein, described second test condition is: be set to by the output voltage of described electro-static discharging generator
Second voltage, the absolute value of described second voltage is more than described first voltage, described electro-static discharging generator
One I/O foot of the nearly described tested integrated circuit of static gun head rest, remaining I/O foot of described tested integrated circuit
Ground connection；
After electrostatic discharge testing under described second working environment, detect whether described tested integrated circuit loses
Effect；
If described tested integrated circuit did not lost efficacy, then, under the second temperature conditions, electro-static discharging generator is divided
It is not arranged under described first test condition and described second test condition and tested integrated circuit is carried out the 3rd work
Making the electrostatic discharge testing under environment, wherein, described second temperature is less than described first temperature；
After electrostatic discharge testing under described 3rd working environment, detect whether described tested integrated circuit loses
Effect；
If described tested integrated circuit did not lost efficacy, then, under the 3rd temperature conditions, electro-static discharging generator is divided
It is not arranged under described first test condition and described second test condition and tested integrated circuit is carried out the 4th work
Making the electrostatic discharge testing under environment, wherein, described 3rd temperature is more than described first temperature；
After electrostatic discharge testing under described 4th working environment, detect whether described tested integrated circuit loses
Effect；
If described tested integrated circuit did not lost efficacy, it is determined that the electrostatic defending performance of described tested integrated circuit is surveyed
Pinged, and wherein, detected tested integrated circuit and whether lost efficacy and include:
Test described tested integrated circuit each I/O foot under carrying out described first working environment, the second building ring
The leakage current after electrostatic discharge testing under border, under the 3rd working environment or under the 4th working environment and I-V characteristic
Curve；
By the leakage current after the described electrostatic discharge testing on each I/O foot and I-V characteristic curve respectively with described
Leakage current and I-V characteristic curve before electrostatic defending performance test contrast；
If the leakage current before the leakage current after described electrostatic discharge testing on each I/O foot and described test
The skew of the I-V characteristic curve before difference, the I-V characteristic curve after described electrostatic discharge testing and described test
Amount is all in corresponding threshold range, it is determined that described tested integrated circuit did not lost efficacy.
Method the most according to claim 1, it is characterised in that
Described first test condition also includes, is set to by the static discharge number of times of described electro-static discharging generator
At least twice, the discharge capacity of described electro-static discharging generator is set to 100pf, described electro-static discharging generator
Discharge resistance be set to 1.5K Ω；
Described second test condition also includes, is set to by the static discharge number of times of described electro-static discharging generator
At least twice, the discharge capacity of described electro-static discharging generator is set to 100pf, described electro-static discharging generator
Discharge resistance be set to 1.5K Ω.
Method the most according to claim 1 and 2, it is characterised in that to described tested integrated circuit
Before carrying out the electrostatic discharge testing under the first working environment, described method also includes,
The performance detecting described tested integrated circuit is the most qualified；
If described tested performance of integrated circuits is qualified, then triggers described under the first temperature conditions, electrostatic is put
Electric generator is arranged under the first test condition the electrostatic carried out tested integrated circuit under the first working environment and puts
The step of electrical testing.
Method the most according to claim 3, it is characterised in that the described tested integrated circuit of described detection
Performance the most qualified include:
Test described tested integrated circuit each I/O foot leakage current before carrying out electrostatic defending performance test and
I-V characteristic curve；
If the leakage current before described electrostatic defending performance test and I-V characteristic curve are at described data integrated circuit
In the parameter area that handbook is given, it is determined that the performance of described tested integrated circuit is qualified；
If described tested performance of integrated circuits is qualified, then record the described electrostatic defending performance of described each I/O foot
Leakage current before test and I-V characteristic curve.
Method the most according to claim 1, it is characterised in that described first temperature conditions is 20 DEG C
～25 DEG C, described second temperature conditions is 5 DEG C～15 DEG C, and described 3rd temperature conditions is 35 DEG C～45 DEG C.
Method the most according to claim 5, it is characterised in that described first voltage is ± 2KV, institute
State the second voltage for ± 4KV.
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