CN103984169A - Liquid crystal display device - Google Patents

Abstract

The invention discloses a liquid crystal display panel of a liquid crystal display device, which is provided with at least one element area and a light-transmitting area and comprises a thin film transistor substrate, an opposite substrate and a liquid crystal layer. A thin film transistor is disposed on the substrate and located in the device region. A first insulating layer is disposed on the substrate. A second insulating layer is arranged on the first insulating layer, and the first insulating layer and the second insulating layer are respectively positioned in the element area and respectively extend to the edge of the light-transmitting area from the element area. A planarization layer is disposed on the substrate and located in the device region and the transparent region. The opposite substrate is opposite to the thin film transistor substrate. The liquid crystal layer is arranged between the thin film transistor substrate and the opposite substrate.

Description

Liquid crystal display device

technical field

The invention relates to a liquid crystal display device with higher transmittance.

Background technique

With the advancement of technology, display devices have been widely used in various fields, especially liquid crystal display devices, which have gradually replaced traditional cathode ray tube display devices due to their superior characteristics such as light and thin body, low power consumption and no radiation. It is applied to many types of electronic products, such as mobile phones, portable multimedia devices, notebook computers, LCD TVs and LCD screens, etc.

Taking a liquid crystal display device as an example, the liquid crystal display device mainly includes a liquid crystal display panel (LCD Panel) and a backlight module (Backlight Module). Wherein, the liquid crystal display panel has a thin film transistor substrate, a color filter substrate and a liquid crystal layer interposed between the two substrates, and the two substrates and the liquid crystal layer can form a plurality of pixels arranged in an array. The backlight module can evenly distribute light from a light source to the liquid crystal display panel, and display colors through each pixel to form an image.

Wherein, each pixel has an element area and a light-transmitting area, the element area is the area where elements such as thin film transistors are arranged, and the light-transmitting area is the area through which light can pass through, and the liquid crystal display panel is the area through which light passes through the light-transmitting area. to display the image screen. However, in the manufacturing process of disposing components such as thin film transistors on the substrate, different thin film layers need to be deposited in the component area and the light-transmitting area, such as buffer layers, dielectric layers, insulating layers, or planarization layers in the two areas. However, when the light provided by the backlight passes through the multi-layer film layer in the light-transmitting area, the light is absorbed or reflected at a high rate, resulting in the transmittance of the liquid crystal display panel and the liquid crystal display device ( Transmittance) is reduced.

Therefore, how to provide a liquid crystal display device with higher transmittance has become one of the important issues.

Contents of the invention

In view of the above problems, the object of the present invention is to provide a liquid crystal display device with higher transmittance.

To achieve the above purpose, a liquid crystal display device according to the present invention includes a liquid crystal display panel and a backlight module. The liquid crystal display panel has at least one element area and a light-transmitting area, and includes a thin film transistor substrate, an opposite substrate and a liquid crystal layer, and the thin film transistor substrate has a substrate, a thin film transistor, a first insulating layer, a second The insulation layer and a planarization layer, the thin film transistor is arranged on the substrate and located in the device area, and the first insulation layer is arranged on the substrate. The second insulating layer is arranged on the first insulating layer, the first insulating layer and the second insulating layer are respectively located in the element area, and respectively extend from the element area to the edge of the light-transmitting area, the planarization layer is arranged on the substrate, and Located in the component area and the light transmission area. The opposite substrate is arranged opposite to the thin film transistor substrate, and the liquid crystal layer is arranged between the thin film transistor substrate and the opposite substrate.

Based on the above, in a liquid crystal display device according to the present invention, the first insulating layer and the second insulating layer of the thin film transistor substrate respectively extend from the element area to the edge of the light-transmitting area. The first insulating layer and the second insulating layer are not provided. Thus, compared with the prior art, there are fewer thin film layers in the light-transmitting area of the thin-film transistor substrate, so when the light provided by the backlight passes through the light-transmitting area of the thin-film transistor substrate, the ratio of light absorbed or reflected Therefore, the liquid crystal display device can have a higher transmittance.

Description of drawings

FIG. 1 is a schematic diagram of a liquid crystal display panel according to a preferred embodiment of the present invention.

FIG. 2 is a schematic diagram of a liquid crystal display panel in another implementation mode of the preferred embodiment of the present invention.

FIG. 3 is a schematic diagram of a liquid crystal display device according to a preferred embodiment of the present invention.

1, 1a: thin film transistor substrate

11: Substrate

12: buffer layer

121: The first buffer layer

122: Second buffer layer

123: The third buffer layer

13: The first insulating layer

14: Second insulating layer

15: Planarization layer

16: protective layer

17: common electrode layer

18: Passivation layer

19: Pixel electrode layer

2: Facing the substrate

3: Liquid crystal layer

4: Liquid crystal display device

5: Backlight module

A: component area

B: Translucent area

C: channel layer

D: Drain

G: grid

O: through hole

P1, P2: LCD panel

S: source

T: thin film transistor

Detailed ways

A liquid crystal display device according to a preferred embodiment of the present invention will be described below with reference to related drawings, wherein the same elements will be described with the same reference symbols.

For the convenience of description, the dimensional relationship (proportion) of the height and width of each element shown in the drawings of the present invention is only for illustration, and does not represent the actual dimensional relationship.

Please refer to FIG. 1 , which is a schematic diagram of a liquid crystal display panel P1 according to a preferred embodiment of the present invention.

The liquid crystal display panel P1 is an active matrix liquid crystal display panel, and has a thin film transistor substrate 1 , a counter substrate 2 and a liquid crystal layer 3 sandwiched between the two substrates. The opposite substrate 2 is disposed opposite to the TFT substrate 1 , and the liquid crystal layer 3 is disposed between the TFT substrate 1 and the opposite substrate 2 . Here, the opposite substrate 2 may have a filter layer (not shown in the figure), so as to become a color filter substrate. The opposite substrate 2 is made of a transparent material, such as glass, quartz or the like. In addition, the thin film transistor substrate 1 , the opposite substrate 2 and the liquid crystal layer 3 can form a plurality of pixels arranged in an array, and each pixel has an element area and a light transmission area respectively. Herein, FIG. 1 is a schematic diagram of an element region A and a light-transmitting region B on a TFT substrate 1 in a liquid crystal display panel P1 .

The thin film transistor substrate 1 includes a substrate 11 , a buffer layer 12 , a thin film transistor T, a first insulating layer 13 , a second insulating layer 14 and a planarization layer 15 .

The substrate 11 is a light-transmitting material. In practice, it can be, for example, glass, quartz or the like, plastic, rubber, glass fiber or other polymer materials, preferably a borate non-alkali glass substrate. In practice, the substrate 11 of the thin film transistor substrate 1 and the counter substrate 2 can be made of the same or different materials, for example, the substrate 11 is made of borate alkali-free glass substrate, while the counter substrate 2 is made of potassium glass substrate. In addition, the liquid crystal display panel P1 may further include a black matrix layer (not shown in the figure). In the direction perpendicular to the substrate 11, the black matrix layer can cover the element area A, so that the light cannot pass through the element area A and is not blocked by the black matrix. The area covered by the layer is the light-transmitting area B. Wherein, the black matrix layer can be disposed on the TFT substrate 1 or the opposite substrate 2 . When the black matrix layer is disposed on the TFT substrate 1, it can become a BOA (BM on array) substrate.

The buffer layer 12 is disposed on the substrate 11 and located in the device area A. The buffer layer 12 may include one or more layers, and its material may include silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, aluminum oxide, or hafnium oxide. Herein, the material of the buffer layer 12 is silicon oxide as an example. Wherein, in the case of a multi-layer structure, the materials of the buffer layers of different layers may be the same or different.

The thin film transistor T is disposed on the buffer layer 12 and located in the device area A. The thin film transistor T may be a top gate (upper gate) type thin film transistor T, or a bottom gate (lower gate) type thin film transistor. In this embodiment, the thin film transistor T of the top gate is taken as an example. Wherein, the thin film transistor T has a gate G, a channel layer C, a source S and a drain D. As shown in FIG. The gate G is arranged correspondingly to the channel layer C and located on the channel layer C, and the buffer layer 12 is located between the substrate 11 and the channel layer C. In addition, in other embodiments, if it is a thin film transistor with a bottom gate (not shown in the figure), the channel layer is located above the gate. Wherein, the material of the gate G is a single-layer or multi-layer structure composed of metal (for example, aluminum, copper, silver, molybdenum, or titanium) or an alloy thereof. Part of the wires used to transmit the driving signal can be electrically connected to each other by using the structure of the same layer and the same manufacturing process as the gate G, such as a scan line.

The channel layer C is disposed on the buffer layer 12 relative to the position of the gate G. In practice, the channel layer C is a semiconductor layer (such as silicon semiconductor, gallium semiconductor, germanium semiconductor or a combination thereof, or others), and its material includes, but is not limited to, an oxide semiconductor. The aforementioned oxide semiconductor includes oxide, and the oxide includes one of indium, gallium, zinc and tin, such as Indium Gallium Zinc Oxide (IGZO). In addition, the source S and the drain D are respectively arranged on the channel layer C, and the source S and the drain D are respectively in contact with the channel layer C. When the channel layer C of the thin film transistor T is not conducted, the two are electrically connected. separate. Wherein, the material of the source S and the drain D can be a single-layer or multi-layer structure composed of metals (such as aluminum, copper, silver, molybdenum, or titanium) or their alloys. In addition, part of the wires used to transmit the driving signal can use the structure of the same layer and the same manufacturing process as the source S and the drain D, such as data lines.

The first insulating layer 13 is disposed on the buffer layer 12 and on the channel layer C, and the first insulating layer 13 is located between the gate G and the channel layer C. The first insulating layer 13 can be a one-layer or multi-layer structure, and its material can include silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, aluminum oxide, or hafnium oxide, or a combination thereof, which is not limited herein. . Wherein, the gate G is disposed on the first insulating layer 13 , and the second insulating layer 14 covers the gate G completely. In addition, the first insulating layer 13 covers the channel layer C. Referring to FIG.

The second insulating layer 14 is disposed on the first insulating layer 13 . Wherein, the second insulating layer 14 can be a one-layer or multi-layer structure, and can be an organic material such as an organic silicon oxide compound, or an inorganic material such as silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, aluminum oxide , hafnium oxide, or a multilayer structure of the above materials are not limited. Here, the second insulating layer 14 completely covers the gate G and the first insulating layer 13 .

The buffer layer 12 , the first insulating layer 13 and the second insulating layer 14 extend from the device area A to the edge of the light-transmitting area B respectively. The "edge" referred to in the present invention is not necessarily exactly the interface between the device area A and the light-transmitting area B, as long as it is adjacent to the interface between the element area A and the light-transmitting area B, it can be called "edge". . In addition, the edge extending from the element region A to the light-transmitting region B means that in the manufacturing process, only the buffer layer 12, the first insulating layer 13 and the second insulating layer 14 are formed in the element region A, and not formed in the In the light-transmitting area B. In practice, for example, the buffer layer 12, the first insulating layer 13 and the second insulating layer 14 can be respectively deposited on the light-transmitting region B of the substrate 11, and then the buffer layer 12, the first insulating layer 13, and the second insulating layer 14 can be deposited on the predefined light-transmitting region using, for example, an etching manufacturing process. The layer 12, the first insulating layer 13 and the second insulating layer 14 are all etched away until the substrate 11 is exposed, so that the buffer layer 12, the first insulating layer 13 and the second insulating layer 14 only exist in the element region A.

The planarization layer 15 is disposed on the substrate 11 and located in the device area A and the light-transmitting area B. Here, since the buffer layer 12, the first insulating layer 13 and the second insulating layer 14 only respectively extend from the element region A to the edge of the light-transmitting region B, as shown in FIG. When the planarization layer 15 is formed on B, the planarization layer 15 can be directly filled into the etched part in the light-transmitting region B, so that the planarization layer 15 can directly contact the substrate 11 . In addition, in the device region A, the planarization layer 15 covers the first insulating layer 13 , the second insulating layer 14 , the thin film transistor T and the buffer layer 12 to achieve planarization. The material of the planarization layer 15 may include organic or inorganic insulating materials, such as polyethylene naphthalate (polyethylene naphthalate, PEN), acrylic (poly-methylmethacrylate, PMMA), or polyimide ( polyimide, PI), or others, are not limited here.

In addition, the TFT substrate 1 further includes a common electrode layer 17, a passivation layer 18 and a pixel electrode layer 19, the common electrode layer 17 is disposed on the planarization layer 15, the passivation layer 18 is disposed on the common electrode layer 17, And cover part of the common electrode layer 17 . The pixel electrode layer 19 is disposed on the passivation layer 18 and covers part of the passivation layer 18 . Here, the common electrode layer 17 , the passivation layer 18 and the pixel electrode layer 19 are sequentially formed on the planarization layer 15 , and are located in the device region A and the light-transmitting region B. In addition, the pixel electrode 19 is electrically connected to the drain D through a through hole O. Wherein, the material of the common electrode layer 17 or the pixel electrode layer 19 can be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), cadmium tin oxide (CTO), tin oxide (SnO2), or zinc oxide (ZnO) and other transparent conductive materials are not limited here. In addition, the material of the passivation layer 18 can be an inorganic material, such as silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, aluminum oxide, hafnium oxide, or a multilayer structure of the above materials.

As mentioned above, in the thin film transistor substrate 1 , the buffer layer 12 , the first insulating layer 13 and the second insulating layer 14 respectively extend from the device area A to the edge of the light-transmitting area B. Thereby, there are fewer thin film layers in the light-transmitting region B, so when the light provided by the backlight passes through the light-transmitting region B of the thin-film transistor substrate 1, the rate of light being absorbed or reflected is less, therefore, the liquid crystal can be made The display panel P1 has a relatively high transmittance. In the transmittance experiment of the liquid crystal display panel P1 in this embodiment, compared with the structure of the existing liquid crystal display panel with a buffer layer and multiple insulating layers in the light-transmitting region, the transmittance of the liquid crystal display panel P1 can be increased by about 10%.

Please also refer to FIG. 2 , which is a schematic diagram of a liquid crystal display panel P2 according to another embodiment of the preferred embodiment of the present invention.

The main difference from the liquid crystal display panel P1 in FIG. 1 is that the thin film transistor substrate 1a of the liquid crystal display panel P2 can further have a protective layer 16, and the protective layer 16 is arranged in the light-transmitting region B, and is located between the substrate 11 and the planarization layer 15. Among them, the protective layer 16 is in direct contact with the first insulating layer 13 , the second insulating layer 14 , the buffer layer 12 and the substrate 11 . In other words, the buffer layer 12, the first insulating layer 13 and the second insulating layer 14 of this embodiment also extend from the device region A to the edge of the light-transmitting region B, but the planarization layer 15 of the light-transmitting region B is not filled The etched area is in contact with the substrate 11, but the area without the buffer layer 12, the first insulating layer 13, and the second insulating layer 14 in the light-transmitting area B is filled with the protective layer 16, and then the planarization layer 15 is formed, so that The protective layer 16 is located between the substrate 11 and the planarization layer 15 , so as to prevent the junction of the device region A and the light-transmitting region B from being flat enough to affect the subsequent manufacturing process during the manufacturing process of forming the planarization layer 15 . Wherein, the protective layer 16 can be a material with a low light absorption rate, and can be a dielectric material, such as but not limited to silicon dioxide. In the transmittance experiment of the liquid crystal display panel P2 of this embodiment, compared with the structure of the existing liquid crystal display panel with a buffer layer and multiple insulating layers in the light-transmitting region, the transmittance of the liquid crystal display panel P2 can be improved About 6%.

Next, please refer to FIG. 3 , which is a schematic diagram of a liquid crystal display device 4 according to a preferred embodiment of the present invention.

The liquid crystal display device 4 includes a liquid crystal display panel P1 and a backlight module 5 . The backlight module 5 is disposed on the other side of the TFT substrate 1 of the liquid crystal display panel P1 relative to the opposite substrate 2 , and emits light, so that the light passes from the TFT substrate 1 through the liquid crystal layer 3 and then exits the opposite substrate 2 . For those skilled in the art, the backlight module 5 is a prior art and will not be repeated here. In addition, the liquid crystal display panel P1 can also be replaced with the above-mentioned liquid crystal display panel P2 to form a liquid crystal display device in another embodiment. Wherein, the liquid crystal display panel P1 and the liquid crystal display panel P2 have been described in detail above, and will not be repeated here.

In summary, in a liquid crystal display device according to the present invention, the first insulating layer and the second insulating layer of the thin film transistor substrate respectively extend from the element area to the edge of the light-transmitting area. The first insulating layer and the second insulating layer are not provided. In this way, compared with the prior art, there are fewer thin film layers in the light-transmitting area of the thin-film transistor substrate, so when the light provided by the backlight passes through the light-transmitting area of the thin-film transistor substrate, the ratio of light absorbed or reflected Therefore, the liquid crystal display device can have a higher transmittance.

The above descriptions are illustrative only, not restrictive. Any equivalent modification or change made without departing from the spirit and scope of the present invention shall be included in the scope of the claims of the present invention.

Claims (10)

1. a liquid crystal display device, is characterized in that, described liquid crystal display device comprises: A liquid crystal display panel has at least one element area and a light-transmitting area, and includes: A thin film transistor substrate, comprising: a substrate; A thin film transistor is arranged on the substrate and located in the element area; a first insulating layer disposed on the substrate; A second insulating layer, disposed on the first insulating layer, the first insulating layer and the second insulating layer are respectively located in the element region and extend from the element region to the edge of said light-transmissive area; and a planarization layer, disposed on the substrate, and located in the element region and the light-transmitting region; a pair of facing substrates, set opposite to the thin film transistor substrate; and A liquid crystal layer is arranged between the thin film transistor substrate and the opposite substrate. 2. The liquid crystal display device according to claim 1, wherein the thin film transistor has a gate, a channel layer, a source and a drain, and the gate and the channel layer Correspondingly, the source and the drain are respectively disposed on the channel layer and are in contact with the channel layer. 3. The liquid crystal display device according to claim 2, wherein the first insulating layer is located between the gate and the channel layer, and the second insulating layer is located between the gate and the channel layer. above the channel layer. 4. The liquid crystal display device according to claim 2, wherein the thin film transistor further comprises a buffer layer located between the gate and the substrate, and located in the element region, and Extending from the element area to the edge of the light-transmitting area respectively. 5. The liquid crystal display device according to claim 1, wherein the buffer layer, the first insulating layer or the second insulating layer comprises a one-layer or multi-layer structure. 6. The liquid crystal display device according to claim 1, wherein the planarization layer covers the second insulating layer. 7. The liquid crystal display device according to claim 1, wherein in the light-transmitting region, the planarization layer is in direct contact with the substrate. 8. The liquid crystal display device as claimed in claim 1, wherein the thin film transistor substrate further has a protective layer, and the protective layer is arranged in the light-transmitting region, and is located between the substrate and the between the planarization layers. 9. The liquid crystal display device according to claim 1, wherein the protective layer is in direct contact with the first insulating layer, the second insulating layer and the substrate. 10. The liquid crystal display device according to claim 1, wherein the thin film transistor substrate further has a common electrode layer, a passivation layer and a pixel electrode layer, and the common electrode layer is arranged on the on the planarization layer, the purification layer is arranged on the common electrode layer and covers the common electrode layer, the pixel electrode layer is arranged on the passivation layer, and passes through a The hole is electrically connected with the drain.