CN103972249A - Active Matrix Image Sensing Panel and Device - Google Patents

Abstract

The invention discloses an active matrix image sensing panel, which comprises a substrate and an image sensing pixel. The image sensing pixel is arranged on the substrate and is provided with a scanning line, a data line, a photosensitive element and a thin film transistor element. The data lines and the scanning lines are arranged in a staggered mode. The photosensitive element is provided with a first endpoint electrode and a second endpoint electrode, and the voltage of the first endpoint electrode is greater than that of the second endpoint electrode. The thin film transistor element is provided with a first electrode, a second electrode, a first grid electrode and a second grid electrode, wherein the first electrode is electrically connected with the data line, the second electrode is electrically connected with the first endpoint electrode of the photosensitive element, the first grid electrode is electrically connected with the scanning line, and the second grid electrode is electrically connected with the first endpoint electrode or the second endpoint electrode of the photosensitive element. The invention also discloses an active matrix image sensing device. The invention can avoid the problem of image sensing distortion caused by the leakage current phenomenon generated by the active matrix type image sensing panel and the device.

Description

Active Matrix Image Sensing Panel and Device

technical field

The present invention relates to an image sensing panel and device, in particular to an active matrix image sensing panel and device.

Background technique

Traditional X-ray imaging technology uses imaging film to receive X-ray exposure to form images, but in recent years, due to the development of semiconductor technology, X-ray imaging technology has also evolved to use flat-panel digital image sensing panels to image, that is, the so-called Digital radiography (digital radiography, DR) technology.

The principle of digital radiography technology is briefly described as follows. When X-rays enter the image sensing device, they will first pass through a scintillator, which converts the X-rays into visible light, and then converts the sensed visible light into electrical signals through the photosensitive element, and then connects To the thin film transistor element, it is read from the data line, and then becomes an image after image processing. Among them, the photosensitive element has also developed from the original charge coupled device (CCD) to a silicon-based photodiode. In the current technology, there is no need to scintillate the crystal layer, but directly convert X-rays into electrical signals.

However, conventionally used thin film transistor elements are, for example, metal oxide thin film transistors, and photosensitive elements are, for example, NIP type amorphous silicon photodiodes. Wherein, the gate of the metal oxide thin film transistor is generally operated at a negative polarity voltage (eg -5V), and the polarity of the bias voltage of the NIP type amorphous silicon photodiode is also negative polarity. Therefore, when the photosensitive element is irradiated with light, the electrons generated will move to the lower electrode of the photosensitive element, thereby reducing the potential of the lower electrode and the source of the thin film transistor. However, if the potential between the lower electrode and the source of the thin film transistor continues to drop due to high-intensity light irradiation, so that the potential difference between the gate and the source continues to rise, and is greater than the threshold voltage of the thin film transistor (Threshold voltage), Then the thin film transistor will be turned on so that the source starts to leak electricity to the data line. In this way, when the image processing module processes and obtains an image, it will cause the problem of sensing distortion.

Therefore, how to provide an active matrix image sensing panel and device that can avoid the problem of image sensing distortion caused by leakage current generated by the active matrix image sensing panel and device has become one of the important issues.

Contents of the invention

In view of the above problems, the object of the present invention is to provide an active matrix image sensing panel and an active matrix image sensing device which can avoid the problem of image sensing distortion due to leakage current.

To achieve the above purpose, an active matrix image sensing panel according to the present invention includes a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and has a scanning line, a data line, a photosensitive element and a thin film transistor element. The data lines and the scan lines are arranged alternately. The photosensitive element has a first terminal electrode and a second terminal electrode, and the voltage of the first terminal electrode is greater than the voltage of the second terminal electrode. The thin film transistor element has a first electrode, a second electrode, a first gate and a second gate, the first electrode is electrically connected to the data line, and the second electrode is electrically connected to the first terminal electrode of the photosensitive element connected, the first grid is electrically connected to the scanning line, and the second grid is electrically connected to the first terminal electrode or the second terminal electrode of the photosensitive element.

To achieve the above purpose, an active matrix image sensing device according to the present invention includes an active matrix image sensing panel and a processing module. The image sensing pixel is disposed on the substrate and has a scanning line, a data line, a photosensitive element and a thin film transistor element. The data lines and the scan lines are arranged alternately. The photosensitive element has a first terminal electrode and a second terminal electrode, and the voltage of the first terminal electrode is greater than the voltage of the second terminal electrode. The thin film transistor element has a first electrode, a second electrode, a first gate and a second gate, the first electrode is electrically connected to the data line, and the second electrode is electrically connected to the first terminal electrode of the photosensitive element connected, the first grid is electrically connected to the scanning line, and the second grid is electrically connected to the first terminal electrode or the second terminal electrode of the photosensitive element. The processing module is electrically connected to the scanning line and the data line of the active matrix image sensing panel respectively.

In one embodiment, the second terminal electrode is electrically connected to a reference voltage, and the polarity of the reference voltage is negative.

In one embodiment, the photosensitive element further has a first semiconductor layer, an intrinsic semiconductor layer and a second semiconductor layer, and the intrinsic semiconductor layer is interposed between the first semiconductor layer and the second semiconductor layer.

In one embodiment, the first semiconductor layer is in direct contact with the second terminal electrode for electrical connection, and the second semiconductor layer is in direct contact with the first terminal electrode for electrical connection.

In one embodiment, the TFT device further has a channel layer, the channel layer includes an oxide semiconductor, the oxide semiconductor includes oxide, and the oxide includes at least one of indium, zinc and tin.

In one embodiment, the second grid is electrically connected to the second terminal electrode through a conductive layer.

In one embodiment, the second gate extends from above the TFT device to above the photosensitive device, and is in direct contact with the second terminal electrode.

In one embodiment, the second gate and the first terminal electrode are in the same layer, and at least part of the first terminal electrode extends from the photosensitive element to the TFT element.

In one embodiment, at least part of the first terminal electrode extends from the photosensitive element to the thin film transistor element, and is in direct contact with the second gate.

Based on the above, in the active matrix image sensing panel and device of the present invention, the first electrode of the thin film transistor element is electrically connected to the data line, and the second electrode is electrically connected to the first terminal electrode of the photosensitive element. The first grid is electrically connected to the scanning line, and the second grid is electrically connected to the first terminal electrode or the second terminal electrode of the photosensitive element. Thereby, the threshold voltage of the thin film transistor element can be increased, and when the photosensitive element is irradiated by light to increase the potential difference between the first grid and the second electrode, the thin film transistor element will not be turned on and leakage will occur. current phenomenon. Therefore, the present invention can avoid the problem of image sensing distortion caused by the leakage current phenomenon generated by the active matrix image sensing panel and device.

Description of drawings

FIG. 1A is a schematic structural diagram of an image sensing pixel in an active matrix image sensing panel according to a preferred embodiment of the present invention.

FIG. 1B is a schematic diagram of an equivalent circuit of the image sensing pixel in FIG. 1A .

FIG. 2 is a schematic diagram of voltage and current curves of thin film transistor elements in the active matrix image sensor panel of the present invention.

Fig. 3 and Fig. 4A are respectively a schematic structural diagram of an image sensing pixel in another aspect of an active matrix image sensing panel according to a preferred embodiment of the present invention; Fig. 4B is an equivalent circuit of the image sensing pixel in Fig. 4A schematic diagram.

FIG. 4C is a schematic structural diagram of an image sensing pixel in an active matrix image sensing panel according to another aspect of the preferred embodiment of the present invention.

FIG. 5 is a functional block diagram of an active matrix image sensing device according to a preferred embodiment of the present invention.

1. 1a~1c, 21: active matrix image sensor panel

11: Substrate

2: Active matrix image sensing device

22: Processing module

C1: Conductive layer (second gate)

C2～C3: conductive layer

DL: data line

E1: first terminal electrode

E2: Second terminal electrode

E3: first electrode

E4: second electrode

ES: etch stop layer

G: (first) gate

I1～I3: insulating layer

I4: protective layer

O1～O3: through hole

P: photosensitive element

P1: first semiconductor layer

P2: Intrinsic semiconducting layer

P3: Second semiconductor layer

SL: scan line

T: thin film transistor element

T11: Gate Dielectric Layer

T12: channel layer

V: reference voltage

Detailed ways

The active matrix image sensing panel and device according to preferred embodiments of the present invention will be described below with reference to related drawings, wherein the same elements will be described with the same reference symbols.

Please refer to FIG. 1A and FIG. 1B at the same time, wherein FIG. 1A is a schematic structural diagram of an image sensing pixel in an active matrix image sensing panel 1 according to a preferred embodiment of the present invention, and FIG. 1B is a schematic diagram of the structure of FIG. 1A The equivalent circuit diagram of the image sensor pixel.

The active matrix image sensing panel 1 includes a plurality of image sensing pixels disposed on a substrate 11 . In practice, the substrate 11 can be a light-transmitting material, such as glass, quartz or the like, plastic, rubber, glass fiber or other polymer materials, preferably a borate alkali-free glass substrate ( aluminum silicate glass substrate). The substrate 11 can also be made of an opaque material, such as a metal-glass fiber composite board or a metal-ceramic composite board.

As shown in FIG. 1A and FIG. 1B, among the image sensing pixels, at least one of the image sensing pixels has a scanning line SL, a data line DL, a photosensitive element P, a thin film transistor element T, and a Conductive layer C1. In addition, the image sensing pixel of this embodiment may further have a conductive layer C2, an insulating layer I1, an insulating layer I2, an insulating layer I3 and a protective layer I4. Wherein, the scan line SL, the data line DL, the photosensitive element P, the thin film transistor element T, the conductive layers C1 , C2 , the insulating layers I1 - I3 and the protection layer I4 are disposed on the substrate 11 . It should be noted that FIG. 1A only depicts one image sensing pixel. As far as the active matrix image sensing panel 1 is concerned, it may have a plurality of image sensing pixels arranged in an array, and a plurality of data lines DL, a plurality of Scanning lines SL are arranged in a staggered manner.

The data lines DL and the scan lines SL are arranged alternately. The photosensitive element P has a first terminal electrode E1 and a second terminal electrode E2 . The first terminal electrode E1 or the second terminal electrode E2 can be a transparent electrode, and its material can be, for example, indium tin oxide (ITO). In addition, the photosensitive element P further has a first semiconductor layer P1 , an intrinsic semiconductor layer P2 and a second semiconductor layer P3 , and the intrinsic semiconductor layer P2 is located between the first semiconductor layer P1 and the second semiconductor layer P3 . Wherein, the first semiconductor layer P1 is in direct contact with the second terminal electrode E2 to be electrically connected, and the second semiconductor layer P3 is in direct contact with the first terminal electrode E1 to be electrically connected. Here, the photosensitive element P is a NIP-type photodiode made of amorphous silicon (a-Si) film deposition. In this embodiment, the first semiconductor layer is, for example, a P-type semiconductor, and the second semiconductor layer is an N-type semiconductor, but of course it is not limited thereto. In addition, as shown in FIG. 1B, the second terminal electrode E2 is electrically connected to a reference voltage V, and the reference voltage V can provide a bias voltage for the photosensitive element P, and is a negative polarity voltage, so that the voltage of the first terminal electrode E1 is greater than that of the first terminal electrode E1. Two terminal electrode voltage E2.

The thin film transistor element T is, for example, an N-type amorphous silicon thin film transistor, and has a gate G, a gate dielectric layer T11 , a channel layer T12 , a first electrode E3 and a second electrode E4 . The gate G is disposed on the substrate 11 and electrically connected to the scan line SL. The material of the gate G is a single-layer or multi-layer structure composed of metal (such as aluminum, copper, silver, molybdenum, or titanium) or its alloy. Part of the wires used to transmit the driving signal can use the structure of the same layer and the same process as the gate G, and be electrically connected to each other, such as scanning lines. The gate dielectric layer T11 is disposed on the gate G, and the gate dielectric layer T11 can be an organic material such as organic silicon oxide compound, or an inorganic material such as silicon nitride, silicon oxide, silicon oxynitride, silicon carbide , aluminum oxide, hafnium oxide, or a multilayer structure of the above materials. The gate dielectric layer T11 needs to completely cover the gate G, and may partially or completely cover the substrate 11 .

The position of the channel layer T12 relative to the gate G is disposed on the gate dielectric layer T11 . In practice, the channel layer T12 may include an oxide semiconductor, for example. Wherein, the aforementioned oxide semiconductor includes oxide, and the oxide includes one of indium, gallium, zinc and tin, such as but not limited to indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO), so that the thin film transistor element T It is a metal oxide thin film transistor. Among them, the metal oxide thin film transistor has the characteristics of low leakage current (the leakage current is between 10-14 amperes and 10-18 amperes), a high electronic energy gap (about 3.1 electron volts) and insensitivity to light irradiation, which is a gain type. (Enhancement mode) transistor.

The first electrode E3 and the second electrode E4 are respectively disposed on the channel layer T12, and the first electrode E3 and the second electrode E4 are respectively in contact with the channel layer T12. When the channel layer T12 of the thin film transistor element T is not conducting, both Department of electrical separation. Wherein, the first electrode E3 is, for example, the drain of the thin film transistor element T, and is electrically connected to the data line DL, and the second electrode E4 is the source electrode of the thin film transistor element T, and is connected to the first terminal electrode of the photosensitive element P. E1 is electrically connected. Here, through the through hole O1 provided on the insulating layer I1 and the insulating layer I2, and through the first terminal electrode E1 extending toward the direction of the thin film transistor element T, the first terminal electrode E1 and the second electrode E4 is electrically connected. The material of the first electrode E3 and the second electrode E4 can be a single-layer or multi-layer structure composed of metal (such as aluminum, copper, silver, molybdenum, or titanium) or an alloy thereof. In addition, part of the wires used to transmit the driving signal can use the structure of the same layer and the same process as the first electrode E3 and the second electrode E4 , such as data wires.

It is worth mentioning that the first electrode E3 (hereinafter also referred to as the drain) and the second electrode (hereinafter also referred to as the source) of the thin film transistor element T of this embodiment can also be arranged at an etch stop (etch stop) layer ES, and one end of the source electrode and the drain electrode are respectively in contact with the channel layer T12 through the opening of the etch stop layer ES. Wherein, the etch stop layer ES can be made of an organic material such as an organic silicon oxide compound, or a single-layer inorganic material such as silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, aluminum oxide, hafnium oxide, or a combination of the above materials layer structure. However, in other embodiments, the source and the drain can also be directly disposed on the channel layer T12 without the etch stop layer ES.

The conductive layer C1 is disposed opposite to the grid G, and the conductive layer C1 is electrically connected to the first terminal electrode E1 or the second terminal electrode E2 of the photosensitive element P. In this embodiment, the conductive layer C1 is located on the gate G. As shown in FIG. Among them, the gate G is called the first gate of the thin film transistor element T, the conductive layer C1 is called the second gate of the thin film transistor element T, and the first gate (gate G) and the second gate (conductive layer C1 ) is disposed opposite to each other, and the insulating layer I1 is disposed between the conductive layer C1 (second gate) and the first electrode E3 or the second electrode E4 . In addition, the insulating layer I2 completely covers the conductive layer C1, and the insulating layer I3 is disposed on the insulating layer I2. In addition, the conductive layer C1 passes through a through hole O2 located on the insulating layer I2 and the insulating layer I3, and extends through the conductive layer C2 from the through hole O2 to the second terminal electrode E2, so that the conductive layer C1 (the second gate ) is electrically connected to the second terminal electrode E2. Wherein, the conductive layer C2 can also be connected to the reference voltage V to provide a bias voltage for the photosensitive element P (not shown in FIG. 1A ). The conductive layers C1 and C2 can be made of transparent (such as ITO) or opaque (such as metal or alloy) materials. Here, the conductive layer C1 is, for example, a metal layer, and the material of the conductive layer C2 is, for example, a transparent conductive layer. In addition, the material of the insulating layer I1 is, for example, silicon oxide (SiOx), the material of the insulating layer I2 is, for example, silicon nitride (SiNx), and the material of the insulating layer I3 includes, for example, silicon nitride (SiNx) or tetrafluoroethylene-perfluoroethylene. Alkoxy vinyl ether copolymer (Polyfluoroalkoxy, PFA). In addition, the protective layer I4 is disposed on the thin film transistor element T and the photosensitive element P, and is located on the conductive layer C2 and the insulating layer I3. Here, the material of the protective layer I4 can be the same as that of the insulating layer I3, and can include, for example, silicon nitride or tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer.

In addition, please refer to FIG. 2 , which is a schematic diagram of the voltage and current curves of the thin film transistor element T in the active matrix image sensing panel 1 of the present invention. Here, the abscissa is the voltage of the gate G (the first gate), and the ordinate is the normalized drain current.

In this embodiment, there is a conductive layer C1 (second grid) on the grid G (first grid), and the conductive layer C1 is electrically connected to the second terminal electrode E2 of the photosensitive element P. In addition, the second terminal electrode E2 is electrically connected to the reference voltage V, and the reference voltage V is the bias voltage of the photosensitive element P, and the voltage polarity of the reference voltage V is negative, so that the voltage of the first terminal electrode E1 is greater than that of the second terminal. Electrode E1 voltage. The electrons accumulated in the channel (back channel, between the channel layer T12 and the etching stop layer ES) of the thin film transistor element T T12 can be guided by the conductive layer C1 (second gate) with negative polarity In this way, the threshold voltage (Threshold voltage) of the thin film transistor element T can be increased. Here, the threshold voltage of the thin film transistor element T is increased by the conductive layer C1, and it can also be said that the thin film transistor element T has a dual-gate design (but in fact, the conductive layer C1 does not have a thin film transistor The original function of the gate G of the element T).

As shown in Figure 2, when the conductive layer C1 is connected to the reference voltage V of negative polarity, and its voltage value becomes smaller and smaller (for example, from 0, -1V, ..., -10V), the gate of the thin film transistor element T will The curve of the voltage and the drain current is shifted to the right, so that the threshold voltage of the TFT device T can be increased (for example, the threshold voltage increases from close to 0V to about 6V). For example, when the voltage value of the reference voltage V is -10V, the voltage of the conductive layer C1 is also -10V by connecting the conductive layer C1 to the reference voltage V, and the threshold voltage of the thin film transistor element T can be increased to + 6V (above). Therefore, when the electrons generated after the photosensitive element P is illuminated move to the first terminal electrode E1 and the second electrode E4 of the thin film transistor element T, although the potential of the second electrode E4 of the thin film transistor element T will drop, thereby causing The potential difference VGS between the gate G and the second electrode E4 (source) continues to rise (that is, the negative value is getting smaller and smaller), but since the threshold voltage of the thin film transistor element T has been increased due to the setting of the conductive layer C1, so The thin film transistor element T will not be turned on, therefore, the thin film transistor element T will not have leakage current.

In addition, the active matrix image sensing panel 1 may further include a wavelength modulation layer (not shown in the figure), which is disposed on the image sensing pixels. Wherein, the wavelength modulating layer can be a scintillator layer, which is used to convert the received light into light of a specific wavelength, such as converting X-rays into visible light, so that the photosensitive element P can receive light. Of course, in the case where the photosensitive element P can directly convert X-rays into electrical signals, the wavelength modulation layer can be omitted.

In addition, please refer to FIG. 3 , which is a schematic structural diagram of an image sensing pixel in an active matrix image sensing panel 1 a according to another aspect of a preferred embodiment of the present invention.

The main difference between FIG. 3 and FIG. 1A is that in the structure of the image sensing pixel in FIG. 3, the conductive layer C1 is not electrically connected to the second terminal electrode E2 of the photosensitive element P through another conductive layer, but the C1 directly extends from above the thin film transistor element T to above the photosensitive element P, and directly contacts with the second terminal electrode E2. In other words, the through hole O2 is formed on the insulating layers I2 and I3, and the conductive layer C1 is disposed in the through hole O2 so as to directly extend from the thin film transistor element T to the photosensitive element P, so as to directly connect with the second terminal electrode E2 is in direct contact to be electrically connected. Wherein, the conductive layer C1 is made of light-transmitting material, such as indium tin oxide (ITO).

In addition, please refer to FIG. 4A and FIG. 4B, wherein, FIG. 4A is a schematic structural diagram of an image sensing pixel in another aspect of the active matrix image sensing panel 1b of a preferred embodiment of the present invention, and FIG. 4B It is a schematic diagram of an equivalent circuit of the image sensing pixel in FIG. 4A .

The main difference from FIG. 1A and FIG. 1B is that, in the active matrix image sensing panel 1b in FIG. 4A and FIG. The second grid) is electrically connected to the first terminal electrode E1 of the photosensitive element P. It can also be said that the first terminal electrode E1 extends from the photosensitive element P to the thin film transistor element T, so that the first terminal electrode E1 can be regarded as a conductive layer on the thin film transistor element T (actually, no conductive layer is required) , Therefore, the photosensitive element P is located on the TFT element T. In addition, another conductive layer C3 is disposed on the photosensitive element P, and the conductive layer C3 can be connected to the reference voltage V to provide a bias voltage to the photosensitive element P. In other embodiments, only the first terminal electrode E1 of the photosensitive element P may be extended without disposing other parts of the photosensitive element P on the TFT element T.

When light enters the photosensitive element P, it can excite the photosensitive element P to generate electron-hole pairs, and apply a negative bias voltage to the photosensitive element P through the reference voltage V, so that the electron-hole pairs are separated. Therefore, when the photosensitive element P is irradiated with light, the electrons generated move to the first terminal electrode E1 of the photosensitive element P, thereby reducing the potentials of the first terminal electrode E1 and the second electrode E4 of the TFT element T. In this embodiment, the potential drop (negative polarity voltage) generated by the first terminal electrode E1 of the photosensitive element P due to light is directly applied to the conductive layer C1 above the thin film transistor element T (at this time, the conductive layer C1 and the first The terminal electrode E1 is the same layer structure) to dynamically provide a negative polarity voltage to the thin film transistor element T, which can also move the curve of the gate voltage and drain current of the thin film transistor element T to the right, thereby enabling The threshold voltage of the thin film transistor element T is increased so that the thin film transistor element T will not be turned on to cause a leakage current phenomenon.

In addition, please refer to FIG. 4C , which is a schematic structural diagram of an image sensing pixel in an active matrix image sensing panel 1c according to yet another aspect of a preferred embodiment of the present invention.

The main difference from FIG. 4A is that in the active matrix image sensing panel 1c, part of the first terminal electrode E1 is extended from the photosensitive element P to the thin film transistor element T, and is in direct contact with the conductive layer C1 to be electrically conductive. connect. It can also be said that the first terminal electrode E1 of the photosensitive element P is electrically connected to the conductive layer C1 (the second grid) through the through hole O3 disposed on the conductive layer C1 . Thereby, when the photosensitive element P is illuminated, a dynamic negative polarity voltage can also be provided to the thin film transistor element T to increase the threshold voltage of the thin film transistor element T, so that the thin film transistor element T will not be turned on to cause leakage current.

In addition, please refer to FIG. 5 , which is a schematic functional block diagram of an active matrix image sensing device 2 according to a preferred embodiment of the present invention.

The active matrix image sensing device 2 includes an active matrix image sensing panel 21 and a processing module 22 . Wherein, the active matrix image sensing panel 21 is electrically connected to the processing module 22 , and can be one of the active matrix image sensing panels 1 - 1 c of the above-mentioned embodiments, and its content will not be repeated here.

The processing module 22 is electrically connected to the data line DL of the active matrix image sensing panel 21 , and receives the photosensitive signal of the photosensitive element of the active matrix image sensing panel 21 to form an image data. The image data can be presented through subsequent image processing and image display. In addition, the processing module 22 is also electrically connected to the scanning lines SL of the active matrix image sensing panel 21 to sequentially enable the scanning lines SL to sequentially read out the photosensitive signals.

In summary, in the active matrix image sensing panel and device of the present invention, the first electrode of the thin film transistor element is electrically connected to the data line, and the second electrode is electrically connected to the first terminal electrode of the photosensitive element. The first grid is electrically connected to the scanning line, and the second grid is electrically connected to the first terminal electrode or the second terminal electrode of the photosensitive element. Thereby, the threshold voltage of the thin film transistor element can be increased, and when the photosensitive element is irradiated by light to increase the potential difference between the first grid and the second electrode, the thin film transistor element will not be turned on and leakage will occur. current phenomenon. Therefore, the present invention can avoid the problem of image sensing distortion caused by the leakage current phenomenon generated by the active matrix image sensing panel and device.

The above descriptions are illustrative only, not restrictive. Any equivalent modification or change made without departing from the spirit and scope of the present invention shall be included in the scope of the claims of the present invention.

Claims (18)

1. An active matrix image sensing panel, characterized in that, the active matrix image sensing panel comprises: a substrate; and An image sensing pixel is arranged on the substrate and has: a scan line; A data line, arranged alternately with the scanning lines; A photosensitive element has a first terminal electrode and a second terminal electrode, the voltage of the first terminal electrode is greater than the voltage of the second terminal electrode; and A thin film transistor element has a first electrode, a second electrode, a first gate and a second gate, the first electrode is electrically connected to the data line, and the second electrode It is electrically connected to the first terminal electrode of the photosensitive element, the first grid is electrically connected to the scanning line, and the second grid is connected to the photosensitive element. The first terminal electrode or the second terminal electrode is electrically connected. 2. The active matrix image sensor panel as claimed in claim 1, wherein the second terminal electrode is electrically connected to a reference voltage, and the polarity of the reference voltage is negative. 3. The active matrix image sensing panel according to claim 1, wherein the photosensitive element further has a first semiconductor layer, an intrinsic semiconductor layer and a second semiconductor layer, and the intrinsic semiconductor layer A layer is interposed between said first semiconductor layer and said second semiconductor layer. 4. The active matrix image sensing panel as claimed in claim 3, wherein the first semiconductor layer is in direct contact with the second terminal electrode to be electrically connected, and the second semiconductor layer It is in direct contact with the first terminal electrode to be electrically connected. 5. The active matrix image sensing panel as claimed in claim 1, wherein the thin film transistor element further has a channel layer, the channel layer comprises an oxide semiconductor, and the oxide semiconductor It includes an oxide, and the oxide includes at least one of indium, zinc and tin. 6 . The active matrix image sensor panel as claimed in claim 1 , wherein the second grid is electrically connected to the second terminal electrode through a conductive layer. 7. The active matrix image sensing panel according to claim 1, wherein the second grid extends from above the thin film transistor element to above the photosensitive element, and is connected to the The second terminal electrode described above is in direct contact. 8. The active matrix image sensor panel according to claim 1, wherein the second grid and the first terminal electrode are in the same layer, and at least part of the first The terminal electrode extends from the photosensitive element to the thin film transistor element. 9. The active matrix image sensing panel as claimed in claim 1, wherein at least part of said first terminal electrode extends from said photosensitive element to above said thin film transistor element, and is connected with said The second gate is in direct contact. 10. An active matrix image sensing device, comprising: An active matrix image sensor panel, including: a substrate; An image sensing pixel is arranged on the substrate and has: a scan line; A data line, arranged alternately with the scanning lines; A photosensitive element having a first terminal electrode and a second terminal electrode, the voltage of the first terminal electrode is greater than the voltage of the second terminal electrode; A thin film transistor element has a first electrode, a second electrode, a first gate and a second gate, the first electrode is electrically connected to the data line, and the second electrode It is electrically connected to the first terminal electrode of the photosensitive element, the first grid is electrically connected to the scanning line, and the second grid is connected to the photosensitive element. The first terminal electrode or the second terminal electrode is electrically connected; and A processing module is electrically connected with the scanning lines and the data lines of the active matrix image sensing panel respectively. 11. The active matrix image sensing device according to claim 10, wherein the second terminal electrode is electrically connected to a reference voltage, and the polarity of the reference voltage is negative. 12. The active matrix image sensing device according to claim 10, wherein the photosensitive element further has a first semiconductor layer, an intrinsic semiconductor layer and a second semiconductor layer, and the intrinsic semiconductor layer A layer is interposed between said first semiconductor layer and said second semiconductor layer. 13. The active matrix image sensing device according to claim 12, wherein the first semiconductor layer is in direct contact with the second terminal electrode to be electrically connected, and the second semiconductor layer It is in direct contact with the first terminal electrode to be electrically connected. 14. The active matrix image sensing device according to claim 10, wherein the thin film transistor element further has a channel layer, the channel layer comprises an oxide semiconductor, and the oxide semiconductor It includes an oxide, and the oxide includes at least one of indium, zinc and tin. 15. The active matrix image sensing device as claimed in claim 10, wherein the second grid is electrically connected to the second terminal electrode through a conductive layer. 16. The active matrix image sensing device according to claim 10, wherein the second grid extends from above the thin film transistor element to above the photosensitive element, and is connected with the The second terminal electrode described above is in direct contact. 17. The active matrix image sensing device according to claim 10, wherein the second grid and the first terminal electrode are in the same layer, and at least part of the first The terminal electrode extends from the photosensitive element to the thin film transistor element. 18. The active matrix image sensing device as claimed in claim 10, wherein at least part of said first terminal electrode extends from said photosensitive element to above said thin film transistor element, and is connected to said The second gate is in direct contact.