CN103956389B - A kind of staged groove MOS schottky diode device - Google Patents
A kind of staged groove MOS schottky diode device Download PDFInfo
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- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
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Abstract
Description
技术领域technical field
本发明属于功率整流器件领域，具体的说是一种低功耗、超高速半导体整流器件，广泛应用于开关电源、变频器、驱动器等电路，做高频、大电流整流二极管、续流二极管、保护二极管使用，或在微波通信等电路中做整流二极管、小信号检波二极管。The invention belongs to the field of power rectification devices, specifically a low-power, ultra-high-speed semiconductor rectification device, which is widely used in circuits such as switching power supplies, frequency converters, and drives, and is used as high-frequency, high-current rectifier diodes, freewheeling diodes, Used for protection diodes, or as rectifier diodes and small signal detection diodes in circuits such as microwave communications.
背景技术Background technique
在高频应用和节能环保意识的推动下，对广泛应用于电子产品的整流二极管电学性能的要求也越来越高。整流二极管在向着快恢复、低漏电和低的正向导通压降发展。Driven by high-frequency applications and awareness of energy conservation and environmental protection, the requirements for the electrical performance of rectifier diodes, which are widely used in electronic products, are also getting higher and higher. Rectifier diodes are developing towards fast recovery, low leakage and low forward voltage drop.
肖特基二极管由于其低的正向导通压降和快速的反向恢复时间，在功率整流器件中得到了广泛的应用，像用到1MHz～3MHz的开关电源(SMPS)，普通的二极管，甚至是快速恢复外延二极管(FRED)和超快速恢复二极管(UFRD)都不能满足需求。但是由于肖特基二极管中少数载流子的存储效应很小，所以其频率响应仅为RC时间常数限制，因而，他是高频和快速开关的理想器件。但是在传统的平面硅肖特基二极管中，由于其反向漏电主要来自于热电子发射，而不是p-n结一样来自于产生复合电流。因此，在相同的面积和电压下，平面肖特基结二极管的反向漏电流比p-n结大很多。Due to its low forward conduction voltage drop and fast reverse recovery time, Schottky diodes have been widely used in power rectification devices, such as switching power supplies (SMPS) of 1MHz to 3MHz, ordinary diodes, and even Neither fast recovery epitaxial diodes (FRED) nor ultrafast recovery diodes (UFRD) can meet the demand. However, since the storage effect of minority carriers in the Schottky diode is very small, its frequency response is only limited by the RC time constant, so it is an ideal device for high frequency and fast switching. However, in the traditional planar silicon Schottky diode, its reverse leakage mainly comes from thermionic emission, rather than the recombination current generated by the p-n junction. Therefore, under the same area and voltage, the reverse leakage current of the planar Schottky junction diode is much larger than that of the p-n junction.
沟槽式MOS势垒肖特基(TMBS)也是在此发展过程中应运而生。TMBS在诸多应用领域都有不可替代的优势：除了适应高频高压的需求，在相比传统整流器，MOS具有的低漏电和低正向导通电压，可以实现节能环保，顺应市场的发招趋势。之所以具有如此优越的性能，主要在于在该结构中，相较与平面肖特基二极管新加入的mos结构和沟槽结构，通过电场耦合作用改变了一定电压下的电场强度分布，将电场强度的最大值从肖特基结处转移到了硅的内部，有效的抑制了反向偏压下由镜像力引起的肖特基势垒降低效应，从而减小了肖特基结的反向漏电流；同时由于电场强度分布曲线的形状的改变，使得TMBS与传统的平面肖特基器件相比，在相同的电压下，器件中的最大电场强度值降低，从而可以使用更高的外延浓度来达到相同的击穿电压，也就改善了正向导通电压。Trench MOS barrier Schottky (TMBS) also came into being during this development process. TMBS has irreplaceable advantages in many application fields: In addition to meeting the needs of high frequency and high voltage, compared with traditional rectifiers, MOS has low leakage and low forward conduction voltage, which can realize energy saving and environmental protection, and conform to the trend of the market. The reason why it has such superior performance is that in this structure, compared with the newly added mos structure and trench structure of the planar Schottky diode, the electric field intensity distribution at a certain voltage is changed through electric field coupling, and the electric field intensity The maximum value of the value is transferred from the Schottky junction to the inside of the silicon, effectively suppressing the Schottky barrier lowering effect caused by the image force under reverse bias, thereby reducing the reverse leakage current of the Schottky junction At the same time, due to the change of the shape of the electric field intensity distribution curve, compared with the traditional planar Schottky device, the maximum electric field intensity value in the device is reduced at the same voltage, so that a higher epitaxial concentration can be used to achieve The same breakdown voltage improves the forward conduction voltage.
自从TMBS结构器件被发明以来，不少研究者致力于通过改变TMBS器件的参数来进一步提高器件性能。如Baliga等通过改善有源区的掺杂分布来改善器件的击穿电压，但是同时也导致了其反向漏电流的增加。Juang等通过在沟槽底部引入p-n结来改善器件在沟槽底部的电场强度分布，达到增加击穿电压的作用等。但是作为TMBS结构器件中非常关键的沟槽结构，对沟槽形状如何影响二极管的电学特性尚未见深入的报道。本专利设计了一种新结构沟槽—阶梯型沟槽TMBS器件,并且通过使用器件模拟软件Medici对器件性能进行了模拟。模拟结果表明，阶梯TMBS与传统TMBS相比，可以在击穿电压不减小，正向导通电压只是略有增加的情况下，漏电实现大幅度的降低。Since the TMBS structure device was invented, many researchers have devoted themselves to further improving the device performance by changing the parameters of the TMBS device. For example, Baliga improved the breakdown voltage of the device by improving the doping distribution of the active region, but at the same time it also led to an increase in its reverse leakage current. Juang et al. improved the electric field intensity distribution of the device at the bottom of the trench by introducing a p-n junction at the bottom of the trench to increase the breakdown voltage. However, as a very critical trench structure in TMBS structure devices, how the trench shape affects the electrical characteristics of diodes has not been reported in depth. In this patent, a new structure trench-stepped trench TMBS device is designed, and the performance of the device is simulated by using the device simulation software Medici. The simulation results show that compared with the traditional TMBS, the ladder TMBS can achieve a large reduction in leakage without reducing the breakdown voltage and only slightly increasing the forward conduction voltage.
发明内容Contents of the invention
本发明目的是，提出一种新结构的阶梯式沟槽肖特基二极管器件，通过将传统的TMBS里面的直角沟槽的上部沟槽变宽，从而得到了使用两个直角的阶梯沟槽，这样能有效的调节沟槽中不同部位的电场耦合作用，从而调节沟槽中间有源区不同深度处电场强度，实现了在保持击穿电压不减小,正向导通电压只是略有增加的情况下，实现漏电的大幅降低。The object of the invention is to propose a stepped trench Schottky diode device of a new structure, by widening the upper trench of the right-angle trench in the traditional TMBS, thereby obtaining two right-angle stepped trenches, This can effectively adjust the electric field coupling effect of different parts in the trench, thereby adjusting the electric field intensity at different depths of the active region in the middle of the trench, and realize the situation that the forward conduction voltage is only slightly increased while maintaining the breakdown voltage does not decrease. Under this condition, the leakage current is greatly reduced.
本发明的技术方案是，一种阶梯式沟槽MOS肖特基二极管器件，包括N+半导体衬底；N-外延层位于N+半导体衬底上；N-外延层上加工成阶梯状的沟槽结构；梯形沟槽内壁生长氧化层；N-外延层上及沟槽内生长肖特基接触的阳极金属；N+衬底下面生长欧姆接触的阴极金属。The technical solution of the present invention is a stepped trench MOS Schottky diode device, comprising an N+ semiconductor substrate; an N- epitaxial layer is located on the N+ semiconductor substrate; a stepped groove structure is processed on the N- epitaxial layer An oxide layer is grown on the inner wall of the trapezoidal trench; an anode metal of Schottky contact is grown on the N- epitaxial layer and in the trench; a cathode metal of ohmic contact is grown under the N+ substrate.
进一步的，所述的沟槽结构是由两个直角沟槽形成阶梯状沟槽。N-外延层的截面为周期性排列的凸出状。Further, the groove structure is a stepped groove formed by two right-angled grooves. The cross-section of the N-epitaxial layer is periodically arranged in a convex shape.
进一步的，所述的N+半导体衬底的掺杂浓度在1×1018cm-3以上。Further, the doping concentration of the N+ semiconductor substrate is above 1×10 18 cm −3 .
进一步的，所述的N-外延层的掺杂浓度在5×1017cm-3以下。Further, the doping concentration of the N- epitaxial layer is below 5×10 17 cm -3 .
所述的N-外延层的掺杂浓度是均匀分布，或者是线性分布，或者是阶梯分布，或者是类高斯分布，或者是任意分布。The doping concentration of the N- epitaxial layer is uniform distribution, or linear distribution, or step distribution, or Gaussian-like distribution, or random distribution.
所述的N-外延层的厚度大于4um。The thickness of the N-epitaxial layer is greater than 4um.
梯形沟槽内壁生长的氧化层厚度大于1000A。The thickness of the oxide layer grown on the inner wall of the trapezoidal trench is greater than 1000A.
沟槽的宽度上下不同，上部沟槽的宽度大于下部的沟槽，即中间凸出的阶梯状的沟槽(中间凸出的两边为沟槽，一般包括多单元阵列的结构)。The width of the grooves is different from top to bottom, and the width of the upper groove is larger than that of the lower groove, that is, the stepped groove protruding in the middle (the two sides of the protruding middle are grooves, generally including a multi-unit array structure).
本发明是一种改善漏电的阶梯状沟槽式肖特基二极管器件，包括N+半导体衬底；N-外延层，位于N+半导体衬底上；N-外延层上加工阶梯状的沟槽结构；梯形沟槽内壁生长氧化层；N-外延层上及沟槽内生长肖特基接触的阳极金属；N+衬底下面生长欧姆接触的阴极金属；The invention is a step-shaped trench type Schottky diode device for improving electric leakage, comprising an N+ semiconductor substrate; an N- epitaxial layer located on the N+ semiconductor substrate; and a step-shaped trench structure processed on the N- epitaxial layer; An oxide layer is grown on the inner wall of the trapezoidal trench; an anode metal of Schottky contact is grown on the N- epitaxial layer and in the trench; a cathode metal of ohmic contact is grown under the N+ substrate;
优选的技术方案中，沟槽式肖特基二极管中的沟槽将不再使用上下同样的宽度，而是使用上部宽度大于下部宽度的沟槽，这样的结果会使得在两个沟槽中间部位的有源区中，电场强度随深度有着更合适的分布：在肖特基结处的电场强度会显著减小，同时由于在上部沟槽直角处的直角效应的作用，使得沟槽内部的场强增强。这样的分布导致了器件漏电的大幅减小，同时器件可以有略微增加的击穿电压，而正向导通电压只是因为器件上部沟槽间有源区宽度减小而略微有所增加；本发明阶梯状沟槽式肖特基二极管使用的沟槽宽度，上部宽度与下部宽度之比为1：0.5-0.65。In the preferred technical solution, the trench in the trench Schottky diode will no longer use the same width up and down, but use a trench whose upper width is greater than the lower width. Such a result will make the middle part of the two trenches In the active region of , the electric field strength has a more suitable distribution with depth: the electric field strength at the Schottky junction will be significantly reduced, and at the same time due to the right angle effect at the right angle of the upper trench, the field inside the trench Strong enhancement. Such a distribution leads to a substantial reduction in the leakage of the device, while the device can have a slightly increased breakdown voltage, while the forward conduction voltage is only slightly increased because the width of the active region between the trenches on the upper part of the device is reduced; the ladder of the present invention The trench width used by the shaped trench Schottky diode, the ratio of the upper width to the lower width is 1:0.5-0.65.
本发明的有益效果在于：本发明的阶梯状沟槽肖特基二极管，将传统TMBS里面的直角沟槽的上部沟槽宽度变宽，成为使用两个直角的阶梯沟槽，这样能有效的调节沟槽中不同部位的电场耦合作用，从而调节沟槽中间有源区不同深度处电场强度。模拟结果显示，使用该结构可以保持在击穿电压不减小、正向导通电压只是略有增加的情况下，实现漏电的大幅降低。通过合理的利用减小沟槽间间距所带来的沟槽间有源区内电场强度减小的效应，和沟槽中氧化层与金属及有源区之间的直角沟槽所带来的电场强度增大的效应，达到使得有源区内靠近肖特基结处的电场强度减弱，远离肖特基结处的上部沟槽底部附件的有源区内的电场强度增强的效果，从而实现了可以在击穿电压不减小，正向导通电压只是略有增加的情况下，漏电实现大幅度的降低，且工艺控制相对容易。The beneficial effects of the present invention are: the stepped groove Schottky diode of the present invention widens the upper groove width of the right-angle groove in the traditional TMBS, and becomes two right-angle stepped grooves, which can effectively adjust The electric field coupling effect of different parts in the trench adjusts the electric field intensity at different depths of the active region in the middle of the trench. The simulation results show that the use of this structure can keep the breakdown voltage unchanged and the forward conduction voltage only slightly increased, and the leakage current can be greatly reduced. By rationally using the effect of reducing the electric field intensity in the active region between the trenches brought about by reducing the spacing between the trenches, and the right-angle trench between the oxide layer and the metal and the active region in the trench. The effect of increasing the electric field strength can achieve the effect of weakening the electric field strength near the Schottky junction in the active region, and enhancing the electric field strength in the active region near the bottom of the upper groove at the Schottky junction, thereby realizing In order to achieve a substantial reduction in leakage without reducing the breakdown voltage and only slightly increasing the forward conduction voltage, the process control is relatively easy.
附图说明Description of drawings
图1为本发明的结构示意图。Fig. 1 is a structural schematic diagram of the present invention.
图2为本发明对特定参数的传统TMBS器件改善前后，及仅通过减小传统TMBS有源区宽度的器件的IV电学特性的对比图。(a)反向IV电学特性对比图；(b)正向IV电学特性对比图。Fig. 2 is a comparison diagram of the IV electrical characteristics of the device before and after the improvement of the traditional TMBS device with specific parameters, and the device only by reducing the width of the traditional TMBS active region. (a) Comparison diagram of reverse IV electrical characteristics; (b) Comparison diagram of forward IV electrical characteristics.
图3为本发明对特定参数的传统TMBS器件改善前后的电场强度分布对比图。(a)40V下沿器件沟槽边缘的电场强度分布图(从肖特基结所处于的平面到外延与衬底的交界所处的平面处)；(b)40V下器件沟槽间有源区中间部位处的电场强度分布图(从肖特基结所处于的平面到外延与衬底的交界所处的平面处)。Fig. 3 is a comparison diagram of the electric field intensity distribution before and after the improvement of the traditional TMBS device with specific parameters according to the present invention. (a) The electric field intensity distribution along the edge of the device trench at 40V (from the plane where the Schottky junction is located to the plane where the junction between the epitaxy and the substrate is located); (b) active between the trenches of the device at 40V Electric field intensity distribution diagram at the middle of the region (from the plane where the Schottky junction is located to the plane where the junction between the epitaxy and the substrate is located).
图4为阶梯沟槽电学性能随上部沟槽间有源区的宽度和深度的变化曲线，(a)阶梯沟槽TMBS器件的击穿电压(在电流密度达到时1mA/cm2所对应的电压)随上部有源区宽度的变化曲线；(b)阶梯TMBS的漏电流密度(45V下的漏电流密度)随上部有源区宽度的变化曲线；(c)阶梯沟槽TMBS器件的正向导通电压(在电流密度达到时103A/cm2所对应的电压)随上部有源区宽度的变化曲线；(d)阶梯TMBS的击穿电压随上部沟槽深度的变化曲线；(e)阶梯TMBS的漏电流密度随上部沟槽深度的变化曲线；(f)阶梯TMBS的正向导通电压随上部沟槽深度的变化曲线。其中各图中直线所对应的纵坐标值为有源区宽度为0.7μm的传统TMBS二极管的相关性能数值。Fig. 4 is the variation curve of step trench electrical performance with the width and depth of the active region between the upper trenches, (a) the breakdown voltage of the step trench TMBS device ( the voltage corresponding to 1mA/cm when the current density reaches ) variation curve with the width of the upper active region; (b) the variation curve of the leakage current density (leakage current density at 45V) of the stepped TMBS with the width of the upper active region; (c) the forward conduction of the stepped trench TMBS device The variation curve of the voltage (the voltage corresponding to 10 3 A/cm 2 when the current density reaches 10 3 A/cm 2 ) with the width of the upper active region; (d) the variation curve of the breakdown voltage of stepped TMBS with the depth of the upper trench; (e) the step The variation curve of the leakage current density of TMBS with the depth of the upper trench; (f) the variation curve of the forward voltage of the stepped TMBS with the depth of the upper trench. The ordinate values corresponding to the straight lines in each figure are the relative performance values of the traditional TMBS diodes with an active region width of 0.7 μm.
具体实施方式detailed description
为了更为具体的描述本发明，下面结合附图及具体实施方式对本发明的技术方案及其相关原理和模拟过程进行详细说明。In order to describe the present invention more specifically, the technical solution of the present invention and its related principles and simulation process will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
如图1所示，一种阶梯状沟槽式肖特基二极管器件，包括N+半导体衬底；N-外延层，位于N+半导体衬底上；N-外延层上加工阶梯状的沟槽结构；梯形沟槽内壁生长氧化层；N-外延层上及沟槽内生长肖特基接触的阳极金属anode；N+衬底下面生长欧姆接触的阴极金属cathode；As shown in Figure 1, a stepped trench Schottky diode device includes an N+ semiconductor substrate; an N- epitaxial layer located on the N+ semiconductor substrate; a stepped trench structure is processed on the N- epitaxial layer; An oxide layer is grown on the inner wall of the trapezoidal trench; an anode metal anode of Schottky contact is grown on the N- epitaxial layer and in the trench; a cathode metal cathode of ohmic contact is grown under the N+ substrate;
如图1所示，该阶梯状沟槽式肖特基二极管器件采用两个不同宽度的沟槽形成阶梯状的沟槽。As shown in FIG. 1 , the stepped trench Schottky diode device adopts two trenches with different widths to form a stepped trench.
如图2所示，为了证明本专利设计结果的作用，我们通过medici模拟了击穿电压在50V的传统沟槽式肖特基二极管和本专利所述的改善方法改善过的阶梯式肖特基二极管的电学性能，同时为了证明我们设计的结果的性能并不是简单的通过减小传统沟槽式肖特基二极管的有源区宽度能代替的，我们也将小有源区宽度的器件的性能一同做对比。正如上文所述，阶梯沟槽TMBS器件与传统TMBS器件相比，可以在击穿电压不减小的情况下，实现漏电流有35％的降低，而正向导通电压只是略有增加(～0.05V)，而如果仅通过将传统的TMBS的有源区的宽度减小，虽然能降低漏电，但是同时会显著的降低器件的击穿电压。模拟的具体参数如下，两个器件所使用的共同参数为：采用的N-外延层掺杂浓度为2×1016cm-3，深度为4μm；器件anode端肖特基结的势垒金属的功函数为5eV；沟槽的总深度(d)为1.65μm；沟槽中氧化层厚度(Tox)为不同的参数为：传统的沟槽式肖特基二极管采用的沟槽间有源区宽度为0.7um；传统TMBS的仅减小有源区宽度的器件有源区宽度为0.4um；本发明阶梯状沟槽式肖特基二极管使用的沟槽间有源区宽度为，上部是0.4um，下部为0.7um，上部沟槽深度为0.7um(有源区宽度与沟槽宽度正好互补)。As shown in Figure 2, in order to prove the effect of the design results of this patent, we simulated the traditional trench Schottky diode with a breakdown voltage of 50V and the stepped Schottky diode improved by the improvement method described in this patent through medici The electrical performance of the diode, and in order to prove that the performance of the result of our design is not simply replaced by reducing the active region width of the traditional trench Schottky diode, we also compare the performance of the device with a small active region width Let's compare together. As mentioned above, compared with the traditional TMBS device, the stepped trench TMBS device can reduce the leakage current by 35% without reducing the breakdown voltage, while the forward conduction voltage is only slightly increased (~ 0.05V), and if only the width of the active region of the traditional TMBS is reduced, although the leakage can be reduced, the breakdown voltage of the device will be significantly reduced at the same time. The specific parameters of the simulation are as follows. The common parameters used by the two devices are: the doping concentration of the N-epitaxial layer used is 2×1016cm-3, and the depth is 4μm; the work function of the barrier metal of the Schottky junction at the anode end of the device is 5eV; the total depth (d) of the trench is 1.65μm; the oxide layer thickness (Tox) in the trench is The different parameters are: the width of the active area between the trenches used by the traditional trench Schottky diode is 0.7um; the width of the active area of the device that only reduces the width of the active area of the traditional TMBS is 0.4um; the step of the present invention The width of the active area between the trenches used by the shaped trench Schottky diode is 0.4um in the upper part, 0.7um in the lower part, and 0.7um in the depth of the upper trench (the width of the active area and the width of the trench are exactly complementary).
如图3所示，从图中可知，与传统TMBS器件(有源区宽度0.7um)相比，在相同电压40V下阶梯沟槽TMBS器件中的最大场强仍在器件的下部沟槽的底部边缘，而最大场强的值略有降低，所以阶梯沟槽TMBS器件的击穿电压略有增大。在器件未击穿之前漏电流在沟槽间各个部位都有，而由图3(a)和(b)所示，在相同电压下，阶梯沟槽与传统TMBS相比，不同x坐标位置处在肖特基表面的电场强度值都有所下降，所以可以有效地减弱肖特基势垒降低效应，从而实现低的漏电流。As shown in Figure 3, it can be seen from the figure that compared with the traditional TMBS device (active region width 0.7um), the maximum field strength in the stepped trench TMBS device at the same voltage of 40V is still at the bottom of the lower trench of the device edge, and the value of the maximum field strength is slightly reduced, so the breakdown voltage of the stepped trench TMBS device is slightly increased. Before the device breaks down, the leakage current exists in various parts between the trenches, and as shown in Figure 3 (a) and (b), at the same voltage, compared with the traditional TMBS, the stepped trench has different x-coordinate positions The value of the electric field strength on the surface of the Schottky decreases, so the effect of reducing the Schottky barrier can be effectively weakened, thereby achieving low leakage current.
如图4所示，阶梯沟槽上部沟槽间有源区的宽度和深度都会影响器件的性能参数，所以我们通过medici程序分别对这两个参数进行调节，得到击穿电压，漏电以及器件的正向导通电压随这些参数的变化趋势。模拟结果显示，随着上部沟槽间距的减小和深度的增加，器件的击穿电压增加，漏电减小，但是正向导通电压会增加，我们可以根据实际的应用需求来选择最佳的器件参数。As shown in Figure 4, the width and depth of the active region between the upper trenches of the stepped trenches will affect the performance parameters of the device, so we adjust these two parameters through the medici program to obtain the breakdown voltage, leakage and device performance. The variation trend of forward voltage with these parameters. The simulation results show that as the pitch of the upper trench decreases and the depth increases, the breakdown voltage of the device increases and the leakage decreases, but the forward conduction voltage increases. We can choose the best device according to the actual application requirements. parameter.
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| CN106057913A (en) * | 2016-06-30 | 2016-10-26 | 南通康比电子有限公司 | Novel trench type barrier schottky diode and production process thereof |
| CN107256886A (en) * | 2017-07-12 | 2017-10-17 | 付妮娜 | Groove-type Schottky diode and preparation method thereof |
| CN109755325A (en) * | 2017-11-01 | 2019-05-14 | 北京大学 | A Novel Double-Slot Metal Oxide Semiconductor Barrier Schottky Diode Structure and Implementation Method |
| CN108063167A (en) * | 2018-01-22 | 2018-05-22 | 北京世纪金光半导体有限公司 | A kind of silicon carbide SBD device structure cell with multistage groove |
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