CN103954900A - Method for measuring steady-state thermal resistance value of IGBT - Google Patents
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Abstract
本发明涉及一种测量IGBT稳态热阻值的方法，属于IGBT技术领域。其方法包括：将IGBT器件的正面开帽，完全露出IGBT器件的芯片表面；将IGBT器件固定在带有小孔的散热片上；在小孔中插入热偶，使热偶的一端与IGBT器件的背面的外壳接触，热偶的另一端连接测试设备；根据施加电压的电压值，管壳温度、表面温度和环境温度，分别计算得到IGBT器件的结壳热阻值和结到环境的热阻值。本发明热红外镜头里面的光电传感器将光信号转变为电信号，以监测待测器件的芯片的表面温度，通过热平衡状态后芯片表面的温度分布来对芯片进行改进，能节省测试时间。
The invention relates to a method for measuring the steady-state thermal resistance of an IGBT, which belongs to the technical field of IGBTs. The method includes: opening the front cap of the IGBT device to completely expose the chip surface of the IGBT device; fixing the IGBT device on a heat sink with a small hole; inserting a thermocouple into the small hole so that one end of the thermocouple is connected to the IGBT device The shell on the back is in contact, and the other end of the thermocouple is connected to the test equipment; according to the voltage value of the applied voltage, the temperature of the tube and case, the surface temperature and the ambient temperature, the junction-to-case thermal resistance and the junction-to-ambient thermal resistance of the IGBT device are calculated respectively . The photoelectric sensor in the thermal infrared lens of the present invention converts optical signals into electrical signals to monitor the surface temperature of the chip of the device to be tested, and improves the chip through the temperature distribution of the chip surface after the thermal equilibrium state, which can save testing time.
Description
技术领域technical field
本发明属于IGBT技术领域，特别涉及一种测量IGBT稳态热阻值的方法。The invention belongs to the technical field of IGBTs, in particular to a method for measuring the steady-state thermal resistance of IGBTs.
背景技术Background technique
IGBT主要应用于电力电子领域，在大功率下工作时一般会产生大量的热，这将直接影响器件的温升和热应力，导致其工作寿命缩短，同时对周围的器件也产生影响。使得周围有些设备、组件和元器件在较高温度下不能正常工作。IGBT的温升和热阻是影响其寿命，评估其可靠性的重要参数之一。IGBTs are mainly used in the field of power electronics. When working at high power, a large amount of heat will be generated, which will directly affect the temperature rise and thermal stress of the device, resulting in shortened working life, and also affect the surrounding devices. Some surrounding equipment, components and components cannot work normally at higher temperatures. The temperature rise and thermal resistance of IGBT are one of the important parameters that affect its life and evaluate its reliability.
出现无线电波与可见光之间的区域。其中波长为0.78～1.5μm的部分称为近红外，波长为1.5～10μm的部分称为中红外，波长为10～1000μm的部分称为远红外线。而波长为2.0～1000μm的部分，也称为热红外线。任何物体在常规环境下都会产生自身的分子和原子无规则的运动，并不停地辐射出热红外能量。分子和原子的运动愈剧烈，辐射的能量愈大；反之，辐射的能量愈小。在自然界中，一切物体都会辐射红外线，利用探测器测定目标本身和背景之间的红外辐射能量差，可以得到不同的红外图像，称为热图像。利用这一特性，将器件表面发出的红外辐射通过适当的光学方法聚焦到红外光电探测器上，此时会在探测器上产生一个与这块面积上的红外辐射成比例的小电压，而它又与器件温度成比例。红外探测器就是将物体发热部位辐射的功率信号转换成电信号后，成像装置就可以一一对应地使用电信号模拟出物体表面温度的空间分布，最后经系统处理，形成热图像视频信号，传至显示屏幕上，就得到与物体表面热分布相对应的热像图，即热红外图像。The region between radio waves and visible light occurs. Among them, the part with a wavelength of 0.78-1.5 μm is called near-infrared, the part with a wavelength of 1.5-10 μm is called mid-infrared, and the part with a wavelength of 10-1000 μm is called far-infrared. The part with a wavelength of 2.0 to 1000 μm is also called thermal infrared. Any object will produce its own molecules and atoms in the normal environment to move randomly, and continuously radiate thermal infrared energy. The more violent the movement of molecules and atoms, the greater the energy of radiation; on the contrary, the smaller the energy of radiation. In nature, all objects radiate infrared rays. Using detectors to measure the infrared radiation energy difference between the target itself and the background, different infrared images can be obtained, which are called thermal images. Using this characteristic, the infrared radiation emitted by the surface of the device is focused on the infrared photodetector through an appropriate optical method. At this time, a small voltage proportional to the infrared radiation on this area will be generated on the detector, and it It is also proportional to the device temperature. The infrared detector is to convert the power signal radiated by the heating part of the object into an electrical signal, and the imaging device can use the electrical signal to simulate the spatial distribution of the surface temperature of the object one by one, and finally processed by the system to form a thermal image video signal. On the display screen, a thermal image corresponding to the thermal distribution on the surface of the object is obtained, that is, a thermal infrared image.
现有技术中，一般使用电学方法测试IGBT的结温来计算热阻，现有电学方法测试IGBT结温的前提是假设器件在大电流下导通时，里面的IGBT芯片各处温度都相等，由脉冲检测电流IF测得正向压降VF来推断芯片的结温。但器件在实际工作过程中，芯片各处温度并不相等，电流密度大的地方温度高，电流密度低的地方温度低。用这种方法求得的结温实际是一个平均温度，并不能反应整个芯片的温度分布。它得到的PN结的温度总是比实际的最高结温低。对于任何一种IGBT，它在应用时都会有一个最高结温，超过这个温度点，该器件就无法正常工作，低于这个温度点，器件才能正常使用。任何一种IGBT也会有一个最大的工作功率，超过这个工作功率，IGBT将会失效。由电学方法测得结温，比实际的最高结温低，计算出最大工作功率比器件实际的允许的最大工作功率更高。当器件上施加使用电学方法计算得到的最大工作功率时，会出现烧毁。In the prior art, the electrical method is generally used to measure the junction temperature of the IGBT to calculate the thermal resistance. The premise of the existing electrical method to test the junction temperature of the IGBT is to assume that when the device is turned on under a large current, the temperature of the IGBT chip inside is equal. The junction temperature of the chip is inferred from the forward voltage drop VF measured by the pulse detection current IF. However, in the actual working process of the device, the temperature of each part of the chip is not equal. The temperature is high where the current density is high, and the temperature is low where the current density is low. The junction temperature obtained by this method is actually an average temperature and cannot reflect the temperature distribution of the entire chip. The temperature of the PN junction it gets is always lower than the actual highest junction temperature. For any kind of IGBT, it will have a maximum junction temperature when it is applied. If it exceeds this temperature point, the device will not work normally. If it is lower than this temperature point, the device can be used normally. Any kind of IGBT will also have a maximum working power, exceeding this working power, the IGBT will fail. The junction temperature measured by the electrical method is lower than the actual maximum junction temperature, and the calculated maximum operating power is higher than the actual maximum operating power of the device. Burnout occurs when the maximum operating power calculated using electrical methods is applied to the device.
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种测量IGBT稳态热阻值的方法，解决了现有技术中通过电学方法，根据IGBT测量结温，导致其结温分布不均匀的技术问题。The technical problem to be solved by the present invention is to provide a method for measuring the steady-state thermal resistance of the IGBT, which solves the technical problem in the prior art that the junction temperature is measured according to the IGBT through an electrical method, resulting in uneven distribution of the junction temperature.
为解决上述技术问题，本发明提供了一种测量IGBT稳态热阻值的方法，包括如下步骤：In order to solve the problems of the technologies described above, the invention provides a method for measuring the steady-state thermal resistance of an IGBT, comprising the steps of:
将IGBT器件的正面开帽，完全露出所述IGBT器件的芯片表面；Uncap the front side of the IGBT device to fully expose the chip surface of the IGBT device;
将所述IGBT器件固定在带有小孔的散热片上，所述小孔在所述IGBT器件的芯片的正下方；Fixing the IGBT device on a heat sink with a small hole directly below the chip of the IGBT device;
在所述小孔中插入热偶，使所述热偶的一端与所述IGBT器件的背面的外壳接触，所述热偶的另一端连接测试设备；Inserting a thermocouple into the small hole so that one end of the thermocouple is in contact with the casing on the back of the IGBT device, and the other end of the thermocouple is connected to the test equipment;
对所述IGBT器件的施加电压，所述测试设备监测所述IGBT器件的壳温，得到所述管壳温度，用温度测量设备测量所述IGBT器件的周围温度，得到环境温度，根据热红外探测设备得到所述IGBT器件的表面温度；For the applied voltage of the IGBT device, the test equipment monitors the shell temperature of the IGBT device to obtain the shell temperature, and measures the ambient temperature of the IGBT device with a temperature measuring device to obtain the ambient temperature. According to the thermal infrared detection The device obtains the surface temperature of the IGBT device;
根据所述施加电压的电压值，所述管壳温度、所述表面温度和所述环境温度，分别计算得到所述IGBT器件的结壳热阻值和所述结到环境的热阻值。According to the voltage value of the applied voltage, the case temperature, the surface temperature and the ambient temperature, the junction-to-case thermal resistance value and the junction-to-ambient thermal resistance value of the IGBT device are calculated respectively.
进一步地，在将所述IGBT器件固定在所述带有小孔的散热片前，将所述IGBT器件的背面均匀涂上导热膏。Further, before the IGBT device is fixed on the heat sink with small holes, the back of the IGBT device is evenly coated with thermal paste.
进一步地，所述得到IGBT器件的结壳热阻值的方法如式(1)所示：Further, the method for obtaining the junction-to-case thermal resistance value of the IGBT device is shown in formula (1):
Rjc＝(Tj2-Tc2)/(I1*V1) (1)R jc ＝(T j2 -T c2 )/(I1*V1) (1)
其中，Rjc为IGBT器件的结壳热阻值，单位为m2·K/W；Tj2为表面温度，单位为摄氏度；Tc2为管壳温度，单位为摄氏度，I1为电流值，单位为安培，V1为电压值，单位为伏特。Among them, R jc is the junction-to-case thermal resistance value of the IGBT device, the unit is m2 K/W; T j2 is the surface temperature, the unit is Celsius; T c2 is the tube case temperature, the unit is Celsius, I1 is the current value, the unit is Ampere, V1 is the voltage value in volts.
进一步地，所述得到IGBT器件的结到环境的热阻值如式(2)所示：Further, the thermal resistance value obtained from the junction to the environment of the IGBT device is shown in formula (2):
Rjr＝(Tj2-Tr2)/(I1*V1) (2)R jr ＝(T j2 -T r2 )/(I1*V1) (2)
其中，Rjr为IGBT器件的结到环境的热阻值，单位为m2·K/W；Tj2为表面温度，单位为摄氏度；Tr2为环境温度，单位为摄氏度，I1为电流值，单位为安培，V1为电压值，单位为伏特。Among them, R jr is the junction-to-ambient thermal resistance value of the IGBT device in m2 K/W; T j2 is the surface temperature in degrees Celsius; T r2 is the ambient temperature in degrees Celsius; I1 is the current value in degrees Celsius is the ampere, and V1 is the voltage value in volts.
本发明提供的测量IGBT稳态热阻值的方法，通过热红外探测设备得到IGBT器件的表面温度，热红外镜头里面的光电传感器将光信号转变为电信号，以监测待测器件的芯片的表面温度，通过热平衡状态后芯片表面的温度分布来对芯片进行改进，使得芯片温度分布变得更加均匀。并且热阻测试前不再需要测试K值，能节省测试时间。The method for measuring the steady-state thermal resistance of the IGBT provided by the present invention obtains the surface temperature of the IGBT device through thermal infrared detection equipment, and the photoelectric sensor in the thermal infrared lens converts the optical signal into an electrical signal to monitor the surface of the chip of the device to be tested Temperature, the chip is improved through the temperature distribution of the chip surface after the thermal equilibrium state, so that the chip temperature distribution becomes more uniform. And it is no longer necessary to test the K value before the thermal resistance test, which can save test time.
附图说明Description of drawings
图1为本发明实施例提供的测量IGBT稳态热阻值的方法流程图；Fig. 1 is the flow chart of the method for measuring the IGBT steady-state thermal resistance value provided by the embodiment of the present invention;
图2为本发明实施例提供的测量IGBT稳态热阻值的方法所用的测试流程图。FIG. 2 is a test flow chart used in the method for measuring the steady-state thermal resistance of an IGBT provided by an embodiment of the present invention.
图3为本发明实施例提供的器件导通时的热分布图。FIG. 3 is a heat distribution diagram when the device is turned on according to an embodiment of the present invention.
具体实施方式Detailed ways
参见图1，本发明实施例提供的一种测量IGBT稳态热阻值的方法，包括如下步骤：Referring to Figure 1, a method for measuring the steady-state thermal resistance of an IGBT provided by an embodiment of the present invention includes the following steps:
步骤101：将IGBT器件的正面开帽，完全露出IGBT器件的芯片表面；Step 101: Uncap the front side of the IGBT device to completely expose the chip surface of the IGBT device;
步骤102：将IGBT器件固定在带有小孔的散热片上，小孔在IGBT器件的芯片的正下方；Step 102: Fix the IGBT device on a heat sink with a small hole directly below the chip of the IGBT device;
步骤103：在小孔中插入热偶，使热偶的一端与IGBT器件的背面的外壳接触，所述热偶的另一端连接测试设备；Step 103: inserting a thermocouple into the small hole, making one end of the thermocouple contact the shell on the back of the IGBT device, and the other end of the thermocouple is connected to the test equipment;
步骤104：对IGBT器件的施加电压，测试设备监测IGBT器件的壳温，得到管壳温度，用温度测量设备测量IGBT器件的周围温度，得到环境温度，根据热红外探测设备得到IGBT器件的表面温度；Step 104: Applying voltage to the IGBT device, the test equipment monitors the case temperature of the IGBT device to obtain the case temperature, measures the ambient temperature of the IGBT device with a temperature measuring device, obtains the ambient temperature, and obtains the surface temperature of the IGBT device according to the thermal infrared detection device ;
步骤105：根据施加电压的电压值，管壳温度、表面温度和环境温度，分别计算得到IGBT器件的结壳热阻值和所述结到环境的热阻值。Step 105: According to the voltage value of the applied voltage, the case temperature, the surface temperature and the ambient temperature, respectively calculate the junction-case thermal resistance value and the junction-to-ambient thermal resistance value of the IGBT device.
其中，得到IGBT器件的结壳热阻值的方法如式(1)所示：Among them, the method of obtaining the junction-to-case thermal resistance value of the IGBT device is shown in formula (1):
Rjc＝(Tj2-Tc2)/(I1*V1) (1)R jc ＝(T j2 -T c2 )/(I1*V1) (1)
其中，Rjc为IGBT器件的结壳热阻值，单位为℃/W；Tj2为表面温度，单位为摄氏度；Tc2为管壳温度，单位为摄氏度，I1为电流值，单位为安培，V1为电压值，单位为伏特；Among them, R jc is the junction-to-case thermal resistance value of the IGBT device, in °C/W; T j2 is the surface temperature, in °C; T c2 is the tube case temperature, in °C; I1 is the current value, in ampere, V1 is the voltage value, the unit is volts;
得到IGBT器件的结到环境的热阻值如式(2)所示：The junction-to-ambient thermal resistance value of the IGBT device is obtained as shown in formula (2):
Rjr＝(Tj2-Tr2)/(I1*V1) (1)R jr ＝(T j2 -T r2 )/(I1*V1) (1)
其中，Rjr为IGBT器件的结到环境的热阻值，单位为℃/W；Tj2为表面温度，单位为摄氏度；Tr2为环境温度，单位为摄氏度，I1为电流值，单位为安培，V1为电压值，单位为伏特；Among them, R jr is the junction-to-ambient thermal resistance value of the IGBT device, in °C/W; T j2 is the surface temperature, in °C; T r2 is the ambient temperature, in °C; I1 is the current value, in ampere , V1 is the voltage value, the unit is volts;
另外，在将IGBT器件固定在带有小孔的散热片前，将IGBT器件的背面均匀涂上导热膏。In addition, before fixing the IGBT device on the heat sink with small holes, evenly coat the back of the IGBT device with thermal paste.
具体方法如下：The specific method is as follows:
参见图2，器件的栅源之间的电压源VGS可以给器件栅源两端提供电压使器件处于开启状态，器件漏源之间的电压源VDS可以给器件提供所需的大电压和大电流，使得器件结温不断上升。对于IGBT结到器件外壳的热阻Rjc测试：先将IGBT器件的正面开帽，完全露出待测IGBT器件的芯片表面。将已开帽的IGBT背面均匀涂上导热膏，并使其固定在带有小孔的大散热片上，小孔正处于IGBT芯片的正下方。在小孔中插入热偶，使热偶的一端接触待测器件背面的外壳，热偶另一端连接万用表或其他设备以监测IGBT的壳温。Referring to Figure 2, the voltage source VGS between the gate and source of the device can provide voltage across the gate and source of the device to make the device in an on state, and the voltage source VDS between the drain and source of the device can provide the device with the required large voltage and large current , causing the junction temperature of the device to rise continuously. For the thermal resistance R jc test of the IGBT junction to the device case: first open the front of the IGBT device to completely expose the chip surface of the IGBT device to be tested. Apply thermal paste evenly on the back of the uncapped IGBT, and fix it on a large heat sink with a small hole, which is just below the IGBT chip. Insert a thermocouple into the small hole so that one end of the thermocouple touches the casing on the back of the device under test, and the other end of the thermocouple is connected to a multimeter or other equipment to monitor the case temperature of the IGBT.
用热红外探测镜头聚焦对准待测器件，热红外镜头通过将光信号转变为电信号，实时监测待测IGBT器件的表面温度，然后，将待测IGBT器件连接到电源上，并施加一定的直流电压V，器件会发热，芯片温度逐渐升高，最后达到热平衡状态。此时，读取并记录万用表测量的管壳温度，记录热红外探测设备得到IGBT器件的表面温度，用温度计测量IGBT器件的周围温度，得到环境温度；Use the thermal infrared detection lens to focus on the device under test. The thermal infrared lens converts the optical signal into an electrical signal to monitor the surface temperature of the IGBT device under test in real time. Then, connect the IGBT device under test to the power supply and apply a certain DC voltage V, the device will heat up, the chip temperature will gradually increase, and finally reach a state of thermal equilibrium. At this time, read and record the shell temperature measured by the multimeter, record the thermal infrared detection equipment to obtain the surface temperature of the IGBT device, and measure the ambient temperature of the IGBT device with a thermometer to obtain the ambient temperature;
根据施加电压的电压值，管壳温度、表面温度和环境温度，分别根据式(1)和式(2)计算得到IGBT器件的结壳热阻值和所述结到环境的热阻值。According to the voltage value of the applied voltage, the tube case temperature, the surface temperature and the ambient temperature, the junction-to-case thermal resistance value and the junction-to-ambient thermal resistance value of the IGBT device are calculated according to formula (1) and formula (2) respectively.
在本发明实施例中，施加漏源之间的电压值为36V，电流为1.32A,，管壳温度为74.3℃、芯片表面最高温度为105.9℃，和环境温度为21.3℃，根据式(1)计算得到IGBT器件的结壳热阻值为0.665℃/W，根据式(2)由美国的稳态热阻测试系统phase11设备得到IGBT器件的结到环境的热阻值为0.835℃/W。影响热阻值因素很多，除了和器件结构有关，还与器件外壳涂抹的导热膏厚度、器件的散热系统、器件安装在散热台上时所受的压力、电压电流及温度测量精度等有关，不同的系统测出的值会有些区别，但从目前两者的测试结果已经比较接近。In the embodiment of the present invention, the voltage value between the applied drain and source is 36V, the current is 1.32A, the shell temperature is 74.3°C, the highest chip surface temperature is 105.9°C, and the ambient temperature is 21.3°C, according to formula (1 ) to calculate the junction-to-case thermal resistance of the IGBT device to be 0.665°C/W, and according to formula (2) to obtain the junction-to-ambient thermal resistance of the IGBT device to be 0.835°C/W from the phase 11 equipment of the steady-state thermal resistance testing system in the United States. There are many factors that affect the thermal resistance value. In addition to the structure of the device, it is also related to the thickness of the thermal paste applied to the device shell, the heat dissipation system of the device, the pressure, voltage, current, and temperature measurement accuracy of the device when it is installed on the heat sink. The values measured by the system will be somewhat different, but the current test results of the two are relatively close.
与现有技术中通过电学方法测量IGBT稳态热阻值的方法相比，本发明实施例提供的测量IGBT稳态热阻值的方法，可以通过得到的热阻值反推出器件导通时的最高结温，电学方法只能反推出器件导通时的平均结温，而IGBT应用时更关心其最高结温。其次，热红外测试方法不需要先求出器件的k系数，减少了将近4小时的测试时间，大大提高了效率。最后，热红外测试方法不仅能得到热阻值，而且能得到器件导通时的热分布图，如图3所示：最白亮的地方是芯片温度最高处，从芯片中心到边缘，器件温度逐渐降低；通过这张图可以优化设计，使得器件导通时温度分布更均匀，提高器件的可靠性。Compared with the method of measuring the steady-state thermal resistance of the IGBT by electrical methods in the prior art, the method for measuring the steady-state thermal resistance of the IGBT provided by the embodiment of the present invention can reversely deduce the thermal resistance of the device when the device is turned on through the obtained thermal resistance. For the maximum junction temperature, the electrical method can only deduce the average junction temperature when the device is turned on, and the application of IGBT is more concerned about its maximum junction temperature. Secondly, the thermal infrared test method does not need to calculate the k-factor of the device first, which reduces the test time by nearly 4 hours and greatly improves the efficiency. Finally, the thermal infrared test method can not only obtain the thermal resistance value, but also obtain the thermal distribution map when the device is turned on, as shown in Figure 3: the brightest part is the highest temperature of the chip, and the temperature of the device gradually increases from the center to the edge of the chip. Reduced; through this figure, the design can be optimized to make the temperature distribution of the device more uniform when it is turned on, and improve the reliability of the device.
本发明实施例提供的测量IGBT结壳热阻值到结到环境的热阻值的方法，通过热红外探测设备得到IGBT器件的表面温度，热红外镜头里面的光电传感器将光信号转变为电信号，以监测待测器件的芯片的表面温度，通过热平衡状态后芯片表面的温度分布来对芯片进行改进，使得芯片温度分布变得更加均匀。并且热阻测试前不再需要测试K值，能节省测试时间。In the method for measuring the thermal resistance of the IGBT junction to the environment provided by the embodiment of the present invention, the surface temperature of the IGBT device is obtained through the thermal infrared detection device, and the photoelectric sensor in the thermal infrared lens converts the optical signal into an electrical signal. , to monitor the surface temperature of the chip of the device under test, and improve the chip through the temperature distribution of the chip surface after the thermal equilibrium state, so that the chip temperature distribution becomes more uniform. And it is no longer necessary to test the K value before the thermal resistance test, which can save test time.
最后所应说明的是，以上具体实施方式仅用以说明本发明的技术方案而非限制，尽管参照实例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的精神和范围，其均应涵盖在本发明的权利要求范围当中。Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present invention without limitation, although the present invention has been described in detail with reference to examples, those of ordinary skill in the art should understand that the technical solutions of the present invention can be carried out Modifications or equivalent replacements without departing from the spirit and scope of the technical solution of the present invention shall be covered by the claims of the present invention.
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