CN103943531A - Method for monitoring auto-doping boron concentration in germanium-silicon process on line - Google Patents
Method for monitoring auto-doping boron concentration in germanium-silicon process on line Download PDFInfo
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- CN103943531A CN103943531A CN201410162698.7A CN201410162698A CN103943531A CN 103943531 A CN103943531 A CN 103943531A CN 201410162698 A CN201410162698 A CN 201410162698A CN 103943531 A CN103943531 A CN 103943531A
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- Prior art keywords
- autodoping
- boron
- germanium silicon
- silicon technology
- positive
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 40
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000012544 monitoring process Methods 0.000 title claims abstract description 21
- 230000003321 amplification Effects 0.000 claims abstract description 39
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 39
- CHYRFIXHTWWYOX-UHFFFAOYSA-N [B].[Si].[Ge] Chemical compound [B].[Si].[Ge] CHYRFIXHTWWYOX-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000002159 abnormal effect Effects 0.000 claims abstract description 11
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 19
- 229910000085 borane Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Bipolar Transistors (AREA)
Abstract
The invention provides a method for monitoring auto-doping boron concentration in the germanium-silicon process on line. The method comprises the steps that a layout of a PNP type bipolar transistor is designed, and an emitter of the PNP type bipolar transistor is made of P type heavy doping germanium-silicon with auto-doping boron; the PNP type bipolar transistor is manufactured; currents of the PNP type bipolar transistor are measured, and the current amplification coefficient is calculated; the actual amount of the adopted boron in the auto-doping boron germanium-silicon process is judged according to the current amplification coefficient, whether the actual amount of the adopted boron is abnormal is detected online, and therefore whether the process is normal can be judged fast, and the abnormal phenomenon occurring in the auto-doping boron germanium-silicon process can be found out in time.
Description
Technical field
The present invention relates to semiconductor integrated circuit and manufacture field thereof, particularly a kind of method of autodoping boron concentration in on-line monitoring germanium silicon technology.
Background technology
Along with developing rapidly of very large scale integration technology, metal oxide semiconductor field effect tube (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET) size of device is constantly reducing, generally include reducing of MOSFET device channel length, the attenuate of gate oxide thickness etc. are to obtain device speed faster.But while being developed to sub-micro level along with very large scale integration technology, particularly when 90 nanometers and following technology node, reduce channel length and can bring series of problems, in order to control short-channel effect, can in raceway groove, mix the impurity with higher concentration, but this can reduce the mobility of charge carrier, thereby cause device performance to decline, simple device size reduces to be difficult to meet the development of large scale integrated circuit technology.Therefore, the broad research of stress engineering is used for improving the mobility of charge carrier, thereby reaches device speed faster, and meets the rule of Moore's Law.
The eighties in last century, academia just started to realize heterostructure research based on silicon-based substrate to the nineties, until just realize business application the beginning of this century.Wherein have two kinds of representational stress application, a kind of is the biaxial stress technology (Biaxial Technique) being proposed by IBM; Another kind is the simple stress technology (Uniaxial Technique) being proposed by Intel, for example pressure memory technique (Stress Memorization Technology, SMT) raceway groove of NMOSFET is applied to tensile stress and improve the mobility of electronics, or selectivity (or embedding) epitaxial growth Ge-Si (SiGe) applies compression to PMOSFET raceway groove and improves the mobility in hole, thereby improves the performance of device.Its principle is: selective epitaxial growth SiGe, itself and Si atom produce lattice mismatch, lattice mismatch has produced the compression (Compressive Stress) to channel region, compression crystal shrinks Brillouin (Brillouin) district, increase the degree of crook that can be with, reduce the radius of curvature that the Si of channel region can be with, thereby can reduce the effective mass of charge carrier, therefore improved the mobility of charge carrier.
For selectivity (or embedding) epitaxial growth SiGe technique, there is research in large quantities to find gas composition, the flow of growth technique, cavity reaction temperature, time, the meeting counter stresses such as annealing temperature, time exert an influence, and set up wired upper real-time monitoring system and monitor the stability of technique.In SiGe technique, often adopt borine to carry out the autodoping of SiGe, realize the heavily doped SiGe of boron.For gas, on-line monitoring is often that characterization processes reacting gas enters flow and the composition situation before reaction cavity, can not the actual service condition that reflects gas in technique.
Summary of the invention
The object of the present invention is to provide the method for autodoping boron concentration in a kind of on-line monitoring germanium silicon technology, on-line monitoring participates in the actual amount of the borane gases of autodoping boron germanium silicon technology, avoids borane gases content extremely follow-up technique to be impacted.
Technical scheme of the present invention is the method for autodoping boron concentration in a kind of on-line monitoring germanium silicon technology, comprising:
Carry out the layout design of positive-negative-positive bipolar transistor, it launches very P type heavy doping germanium silicon, and autodoping boron;
Carry out the making of described positive-negative-positive bipolar transistor;
Measure the electric current of described positive-negative-positive bipolar transistor, and calculate current amplification factor;
Judge the actual amount of boron in autodoping boron germanium silicon technology according to described current amplification factor.
Further, whether extremely judge that according to described current amplification factor whether the actual amount of boron in autodoping boron germanium silicon technology is abnormal.
What further, in germanium silicon technology, autodoping boron adopted is borine.
Further, whether extremely judge according to described current amplification factor whether the gas usage of the borine that participates in autodoping boron germanium silicon technology occurs extremely.
Further, described electric current comprises base current and collector current.
Further, need to measure many group current data, and calculate multiple current amplification factors, draw the variation tendency of current amplification factor with this.
Further, judge according to the variation tendency of current amplification factor whether current amplification factor occurs extremely.
Further, the base stage of described positive-negative-positive bipolar transistor is N-type trap.
Further, very P type substrate of the current collection of described positive-negative-positive bipolar transistor.
Compared with prior art, the present invention has the following advantages:
The present invention is set to the P type heavy doping germanium silicon of doped with boron by the emitter of positive-negative-positive bipolar transistor, electric current is measured in the making that completes positive-negative-positive bipolar transistor afterwards, and calculate current amplification factor, judge the actual amount of boron in autodoping boron germanium silicon technology according to current amplification factor, whether the online actual amount that detects boron occurs extremely, thereby judge that fast whether technique is normal, that finds in time to occur in autodoping boron germanium silicon technology is abnormal.
Brief description of the drawings
Fig. 1 is the process flow diagram of the method for autodoping boron concentration in on-line monitoring germanium silicon technology in one embodiment of the invention.
Fig. 2 is the vertical view of positive-negative-positive bipolar transistor in one embodiment of the invention.
Fig. 3 is the profile of positive-negative-positive bipolar transistor in one embodiment of the invention.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, and in the time that example of the present invention is described in detail in detail, for convenience of explanation, schematic diagram does not amplify according to general ratio is local, should be to this as restriction of the present invention.
Core concept of the present invention is: the P type heavy doping germanium silicon that is set to doped with boron by the emitter of positive-negative-positive bipolar transistor, electric current is measured in the making that completes positive-negative-positive bipolar transistor afterwards, and calculate current amplification factor, judge the actual amount of boron in autodoping boron germanium silicon technology according to current amplification factor, whether the online actual amount that detects boron occurs extremely, thereby judge that fast whether technique is normal, that finds in time to occur in autodoping boron germanium silicon technology is abnormal.
Fig. 1 is the process flow diagram of the method for autodoping boron concentration in on-line monitoring germanium silicon technology in one embodiment of the invention, and as shown in Figure 1, the present invention proposes the method for autodoping boron concentration in a kind of on-line monitoring germanium silicon technology, comprising:
Step S01: carry out the layout design of positive-negative-positive bipolar transistor, it launches very P type heavy doping germanium silicon, and autodoping boron;
Step S02: carry out the making of described positive-negative-positive bipolar transistor;
Step S03: measure the electric current of described positive-negative-positive bipolar transistor, and calculate current amplification factor;
Step S04: the actual amount that judges boron in autodoping boron germanium silicon technology according to described current amplification factor.
In step S01, carry out the layout design of positive-negative-positive bipolar transistor, it launches very P type heavy doping germanium silicon, and autodoping boron.
In the present embodiment, carry out the layout design of positive-negative-positive bipolar transistor, the transmitting of described positive-negative-positive bipolar transistor is P type heavy doping germanium silicon very, and autodoping boron, germanium silicon technology by autodoping boron is realized, and base stage is N-type trap, and collector electrode is P type substrate.
In step S02, carry out the making of described positive-negative-positive bipolar transistor.
Below briefly introduce the manufacturing process of described positive-negative-positive bipolar transistor:
S021: carry out the making of isolation structure of shallow trench on P type substrate;
S022: carry out trap and inject formation N-type trap or P type trap, in the present embodiment, form N-type trap, form the base stage of positive-negative-positive bipolar transistor;
S023: make the deposit of grid oxic horizon and grid, the material of deposit is polysilicon, and polysilicon is carried out to photoetching formation grid;
S024: carry out light dope and inject formation leakage light-dope structure;
S025: make first grid side wall, the formation of described first grid side wall comprises the oxidation of polysilicon gate and the deposit of silicon nitride;
S026: carry out the growth of germanium and silicon epitaxial, form the emitter of positive-negative-positive bipolar transistor;
S027: make second grid side wall;
S028: carry out source and leak to inject and form source-drain electrode, in the present embodiment, inject the source-drain electrode that forms P type by P type doping, described P type is doped to boron doping, employing be the autodoping that borine carries out germanium silicon, can be in order to P type substrate draw to form collector electrode;
S029: make silicide, through hole, metal plug and metal level;
S030: finally test.
More than launch the very manufacture craft of positive-negative-positive bipolar transistor and the manufacture craft of the prior art compatibility completely of P type heavy doping germanium silicon, do not need extra light shield mask plate, therefore can not produce extra cost.
In step S03, measure the electric current of described positive-negative-positive bipolar transistor, and calculate current amplification factor.
In the present embodiment, base current and the collector current of on-line measurement positive-negative-positive bipolar transistor, and calculate current amplification factor, and need on-line measurement to organize current data more, calculate multiple current amplification factors, draw thus the variation tendency of current amplification factor; In ripe manufacturing process, also can use the variation tendency of existing current amplification factor.
In step S04, judge the actual amount of boron in autodoping boron germanium silicon technology according to described current amplification factor.
In the present embodiment, whether the actual amount that whether extremely judges boron in autodoping boron germanium silicon technology according to described current amplification factor is abnormal, what in the process due to formation autodoping boron, use is borine, judges whether the gas usage of the borine that participates in autodoping boron germanium silicon technology occurs extremely; Concrete: judge according to the variation tendency of the current amplification factor drawing in step S03 whether current amplification factor occurs extremely, if current amplification factor does not occur extremely, the borane gases consumption of explanation participation autodoping boron germanium silicon technology does not occur extremely, can proceeding the making of all the other positive-negative-positive bipolar transistors; Abnormal if current amplification factor occurs, the gas content that the borine of autodoping boron germanium silicon technology is described occurs abnormal, need to determine whether borane gases supply determining of a series of relevant abnormalities such as abnormal occurs whether to occur in abnormal or borine course of reaction.
Please refer to Fig. 2 and Fig. 3, it is vertical view and the sectional view of positive-negative-positive bipolar transistor in one embodiment of the invention.As shown in Figure 2 and Figure 3,1 is the collector electrode of positive-negative-positive bipolar transistor, and 2 is base stage, and 3 is emitter, and 4 is isolation structure of shallow trench.Base current and the collector current of on-line measurement positive-negative-positive bipolar transistor, calculate current amplification factor, and judge whether current amplification factor occurs extremely, and whether the gas usage that judges the borine that participates in autodoping boron germanium silicon technology with this occurs extremely.
In sum, the present invention is set to the P type heavy doping germanium silicon of doped with boron by the emitter of positive-negative-positive bipolar transistor, electric current is measured in the making that completes positive-negative-positive bipolar transistor afterwards, and calculate current amplification factor, judge the actual amount of boron in autodoping boron germanium silicon technology according to current amplification factor, whether the online actual amount that detects boron occur extremely, thereby judge that fast whether technique normal, find in time to occur in autodoping boron germanium silicon technology extremely.
Foregoing description is only the description to preferred embodiment of the present invention, the not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, all belong to the protection range of claims.
Claims (9)
1. a method for autodoping boron concentration in on-line monitoring germanium silicon technology, is characterized in that, comprising:
Carry out the layout design of positive-negative-positive bipolar transistor, it launches very P type heavy doping germanium silicon, and autodoping boron;
Carry out the making of described positive-negative-positive bipolar transistor;
Measure the electric current of described positive-negative-positive bipolar transistor, and calculate current amplification factor;
Judge the actual amount of boron in autodoping boron germanium silicon technology according to described current amplification factor.
2. the method for autodoping boron concentration in on-line monitoring germanium silicon technology as claimed in claim 1, is characterized in that, whether extremely judges that whether the actual amount of boron in autodoping boron germanium silicon technology is abnormal according to described current amplification factor.
3. the method for autodoping boron concentration in on-line monitoring germanium silicon technology as claimed in claim 2, is characterized in that, what in germanium silicon technology, autodoping boron adopted is borine.
4. the method for autodoping boron concentration in on-line monitoring germanium silicon technology as claimed in claim 3, is characterized in that, whether extremely judges whether the gas usage of the borine that participates in autodoping boron germanium silicon technology occurs extremely according to described current amplification factor.
5. the method for autodoping boron concentration in on-line monitoring germanium silicon technology as claimed in claim 1, is characterized in that, described electric current comprises base current and collector current.
6. the method for autodoping boron concentration in on-line monitoring germanium silicon technology as claimed in claim 5, is characterized in that, needs to measure many group current data, and calculates multiple current amplification factors, draws the variation tendency of current amplification factor with this.
7. the method for autodoping boron concentration in on-line monitoring germanium silicon technology as claimed in claim 6, is characterized in that, judges according to the variation tendency of current amplification factor whether current amplification factor occurs extremely.
8. the method for autodoping boron concentration in on-line monitoring germanium silicon technology as claimed in claim 1, is characterized in that, the base stage of described positive-negative-positive bipolar transistor is N-type trap.
9. the method for autodoping boron concentration in on-line monitoring germanium silicon technology as claimed in claim 8, is characterized in that, the current collection of described positive-negative-positive bipolar transistor is P type substrate very.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410162698.7A CN103943531A (en) | 2014-04-22 | 2014-04-22 | Method for monitoring auto-doping boron concentration in germanium-silicon process on line |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410162698.7A CN103943531A (en) | 2014-04-22 | 2014-04-22 | Method for monitoring auto-doping boron concentration in germanium-silicon process on line |
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| CN103943531A true CN103943531A (en) | 2014-07-23 |
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| CN201410162698.7A Pending CN103943531A (en) | 2014-04-22 | 2014-04-22 | Method for monitoring auto-doping boron concentration in germanium-silicon process on line |
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Cited By (1)
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| CN105426836A (en) * | 2015-11-17 | 2016-03-23 | 上海师范大学 | Single-sample face recognition method based on segmented model and sparse component analysis |
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