CN103938173A - Co-sputtering rotary target and preparation method thereof - Google Patents
Co-sputtering rotary target and preparation method thereof Download PDFInfo
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- CN103938173A CN103938173A CN201410181267.5A CN201410181267A CN103938173A CN 103938173 A CN103938173 A CN 103938173A CN 201410181267 A CN201410181267 A CN 201410181267A CN 103938173 A CN103938173 A CN 103938173A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 44
- 239000013077 target material Substances 0.000 claims description 30
- 238000005520 cutting process Methods 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 6
- 230000001413 cellular effect Effects 0.000 claims description 5
- 238000009434 installation Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The invention relates to the technical field of physical preparation of a film, and particularly relates to a co-sputtering rotary target and a preparation method thereof. The co-sputtering rotary target is characterized by comprising a rotary cylindrical target tube and a centralized actionless magnet, wherein for the rotary cylindrical target tube, doped component target units and body component target units with different shapes are distributed on a cylindrical support substrate in different manners, and both the doped component target units and the body component target units are distributed according to certain arrangement rules. According to the invention, the target units to be co-sputtered and the target units to be co-doped are manufactured into different shapes and are distributed on the cylindrical support substrate in different manners, and the actionless magnet is arranged at the center of the cylindrical support substrate, so that slow rotation realizes magnetron sputtering, thereby achieving the purpose of high-uniformity co-doping; and the target utilization ratio is relatively high.
Description
Technical field
The physics preparing technical field that the present invention relates to film, is specifically related to a kind of cosputtering rotary target material and preparation method thereof.
Background technology
Sputter is one of major technique of preparing thin-film material, there is ionization and be accelerated into ionic fluid under electromagnetic field effect in working gas, thereby high speed ion bundle bombardment solid surface produces atom, ion, molecule and is deposited on the film that substrate surface forms high uniformity under electric field action.The solid being bombarded by high speed ion bundle is called sputtering target material, and sputtering target material has alloy target material, ceramic target etc., according to the formation of target, can be divided into composite target material, cosputtering target etc.Composite target material is made composition and the body composition blending dispersion of needs doping through sintering, cosputtering target is that doping composition is what to separate with body composition.Composite target material composition being uniformly distributed in film that be conducive to adulterate, but this target manufacturing process is complicated, and manufacturing cost is high, easily occurs that the segregation of doping composition causes the inhomogeneous phenomenon of adulterating in target sintering.Cosputtering target, because adulterate composition and body composition are split targets, only need to be prepared into separately target, and this target manufacturing process is simple, and the uniform doping that still how to improve film is a problem for needs further investigation.
In order to guarantee the homogeneity of deposit film, magnetron sputtering is generally taked is that the form of target and substrate " face-to-face " deposits, and therefore this deposition method is difficult to realize the high uniformity cosputtering doping of atomic scale.For solving the problem of codoped, some patent applications at present adopt the mode of a plurality of targets sputters simultaneously, but this mode is only suitable for development application, in production line, target size is large, is difficult to realize the cosputtering deposition of many targets long-term stability.Also have patent to disclose the surface that little target is adhered to large target, realize common sputter and co-doped, but this mode is more coarse, be difficult to ensure the homogeneity of card doping.
Summary of the invention
The object of the invention is for the deficiencies in the prior art, the doping of a kind of high uniformity, reliable and stable cosputtering rotary target material are provided, and open its preparation method.
Technical scheme of the present invention is as follows:
A kind of cosputtering rotary target material, it is characterized in that: comprise the magnet that rotating cylindrical target pipe and central stationary are motionless, described rotating cylindrical target pipe by difform doping composition target unit and body composition target unit with different formal distributions in round shape support substrates, doping composition target unit and body composition target unit distribute according to certain rule of arranging.
Magnet of the present invention comprises center pole shoe and peripheral permanent magnet.
Cosputtering rotary target material preparation method of the present invention is as follows:
A, doping composition and body composition are prepared into respectively to the target of split;
B, the concentration ratio that adulterate composition and body composition target are adulterated as required and shape cutting target unit;
C, by the target cellular installation after cutting in round shape support substrates, and actionless magnet is placed at the center of round shape support substrates, makes cosputtering target rotary target pipe;
D, when magnetron sputtering is worked, rotary target material has driven different target unit rotational, and realizes cosputtering and codoped.
The present invention will need the target unit of cosputtering and codoped to be made into different shapes, with different formal distributions in round shape support substrates, and actionless magnet is placed at the center of round shape support substrates, slow rotation realizes magnetron sputtering, reach the object of high uniformity codoped, its target utilization is also higher.
Accompanying drawing explanation
Fig. 1 is the structural representation of cosputtering rotary target material of the present invention.
Fig. 2 is horizontal layer rotary target material modular construction schematic diagram.
Fig. 3 is oblique stratiform rotary target material modular construction schematic diagram.
Fig. 4 is vertical lamellar rotation target modular construction schematic diagram.
Preparation method's schematic diagram of Fig. 5 cosputtering rotary target material of the present invention.
Specific embodiment
Below in conjunction with accompanying drawing, the embodiment of the present invention being done to one elaborates:
As shown in Figure 1, a kind of cosputtering rotary target material, it is characterized in that: comprise rotating cylindrical target pipe 1 and the motionless magnet of central stationary, described rotating cylindrical target pipe 1 by difform doping composition target unit 11 and body composition target unit 12 with different formal distributions in round shape support substrates.
Magnet of the present invention comprises center pole shoe 2 and peripheral permanent magnet 3, and pole shoe 2 is positioned at cylindrical center position, and permanent magnet 3 is evenly installed on the periphery of pole shoe 2, and cylindrical target pipe 1 is arranged on the periphery of pole shoe 2.
Doping composition target of the present invention unit 11 and body composition target unit 12 can consist of various shape, as horizontal layer structure (as shown in Figure 2), oblique stratiform (as shown in Figure 3), vertical stratiform (as shown in Figure 4) etc.
As shown in Figure 5, the concrete preparation method of cosputtering rotary target material of the present invention is as follows:
A, adopt respectively the method for cast sintering or vacuum sintering to be prepared into the target of split doping composition and body composition, two kinds of target unit have identical internal diameter.
B, the concentration ratio that adulterate composition and body composition target are adulterated as required and shape cut into doping composition target unit 11 and body composition target unit 12; Composition target unit 11 and body composition target unit 12 cutting positions of guaranteeing during cutting to adulterate form complementary relationships, to guarantee that two kinds of target cellular installations form complete rotary target material after together, and can not leave the room that there is no target.
C, by cutting after doping composition target unit 11 and body composition target unit 12 target cellular installations in round shape support substrates, and actionless magnet is placed at the center of round shape support substrates, magnet comprises center pole shoe 2 and peripheral permanent magnet 3, pole shoe 2 is positioned at cylindrical center position, permanent magnet 3 is evenly installed on the periphery of pole shoe 2, cylindrical target pipe 1 is arranged on the periphery of pole shoe 2, thereby makes cosputtering target rotary target pipe;
D, when magnetron sputtering is worked, rotary target material has driven different target unit rotational, and realizes cosputtering and codoped.
Claims (8)
1. a cosputtering rotary target material, is characterized in that: comprise the magnet that rotating cylindrical target pipe and central stationary are motionless.
2. cosputtering rotary target material according to claim 1, is characterized in that: described rotating cylindrical target pipe by difform doping composition target unit and body composition target unit with different formal distributions in round shape support substrates.
3. cosputtering rotary target material according to claim 1 and 2, it is characterized in that: described magnet comprises center pole shoe and peripheral permanent magnet, pole shoe is positioned at cylindrical center position, and permanent magnet is evenly installed on the periphery of pole shoe, and cylindrical target pipe is arranged on the periphery of pole shoe.
4. cosputtering rotary target material according to claim 2, is characterized in that: doping composition target unit and body composition target unit, to consist of various shape, comprise horizontal layer structure, oblique stratiform, vertical stratiform.
5. cosputtering rotary target material according to claim 2, is characterized in that: doping composition target unit and body composition target unit distribute according to certain rule of arranging.
6. a preparation method for cosputtering rotary target material, is characterized in that:
A, doping composition and body composition are prepared into respectively to the target of split;
B, the concentration ratio that adulterate composition and body composition target are adulterated as required and shape cutting target unit;
C, by the target cellular installation after cutting in round shape support substrates, and actionless magnet is placed at the center of round shape support substrates, makes cosputtering target rotary target pipe;
D, when magnetron sputtering is worked, rotary target material has driven different target unit rotational, and realizes cosputtering and codoped.
7. the preparation method of cosputtering rotary target material according to claim 5, is characterized in that: described in steps A, target adopts doping composition and body composition respectively the method preparation of cast sintering or vacuum sintering, and two kinds of target unit have identical internal diameter.
8. the preparation method of cosputtering rotary target material according to claim 5, it is characterized in that: during step B cutting, guarantee to adulterate composition target unit and body composition target unit cutting position form complementary relationship, to guarantee that two kinds of target cellular installations form complete rotary target material after together, and can not leave the room that there is no target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410181267.5A CN103938173A (en) | 2014-04-30 | 2014-04-30 | Co-sputtering rotary target and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410181267.5A CN103938173A (en) | 2014-04-30 | 2014-04-30 | Co-sputtering rotary target and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109161863A (en) * | 2018-11-16 | 2019-01-08 | 合肥鑫晟光电科技有限公司 | A kind of target, magnetic control sputtering device and sputtering method, sputtered film |
| CN115505885A (en) * | 2022-09-07 | 2022-12-23 | 有研稀土新材料股份有限公司 | Co-sputtering rare earth rotating target material, preparation method and application method thereof |
| CN116288192A (en) * | 2022-09-07 | 2023-06-23 | 有研稀土新材料股份有限公司 | Preparation method of rare earth alloy target for improving performance of neodymium iron boron |
| CN116497324A (en) * | 2023-06-09 | 2023-07-28 | 深圳市汉嵙新材料技术有限公司 | Composite perovskite target material and preparation method thereof, preparation method of perovskite solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1733965A (en) * | 2004-08-10 | 2006-02-15 | 应用薄膜有限责任与两合公司 | Magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate |
| CN101285171A (en) * | 2007-05-10 | 2008-10-15 | 胜倍尔超强镀膜（苏州）有限公司 | Rotary cylindrical magnetron sputtering target |
| CN102321871A (en) * | 2011-09-19 | 2012-01-18 | 基迈克材料科技（苏州）有限公司 | Hot isostatic pressing is produced the method for flat-panel monitor with the molybdenum alloy sputtering target material |
-
2014
- 2014-04-30 CN CN201410181267.5A patent/CN103938173A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1733965A (en) * | 2004-08-10 | 2006-02-15 | 应用薄膜有限责任与两合公司 | Magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate |
| CN101285171A (en) * | 2007-05-10 | 2008-10-15 | 胜倍尔超强镀膜（苏州）有限公司 | Rotary cylindrical magnetron sputtering target |
| CN102321871A (en) * | 2011-09-19 | 2012-01-18 | 基迈克材料科技（苏州）有限公司 | Hot isostatic pressing is produced the method for flat-panel monitor with the molybdenum alloy sputtering target material |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109161863A (en) * | 2018-11-16 | 2019-01-08 | 合肥鑫晟光电科技有限公司 | A kind of target, magnetic control sputtering device and sputtering method, sputtered film |
| CN109161863B (en) * | 2018-11-16 | 2023-08-22 | 合肥鑫晟光电科技有限公司 | Target material, magnetron sputtering device, sputtering method and sputtering film |
| CN115505885A (en) * | 2022-09-07 | 2022-12-23 | 有研稀土新材料股份有限公司 | Co-sputtering rare earth rotating target material, preparation method and application method thereof |
| CN116288192A (en) * | 2022-09-07 | 2023-06-23 | 有研稀土新材料股份有限公司 | Preparation method of rare earth alloy target for improving performance of neodymium iron boron |
| CN116497324A (en) * | 2023-06-09 | 2023-07-28 | 深圳市汉嵙新材料技术有限公司 | Composite perovskite target material and preparation method thereof, preparation method of perovskite solar cell |
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Application publication date: 20140723 |