CN103915571A - AMOLED display panel and film manufacturing method and display device - Google Patents

Abstract

The invention discloses an active matrix organic light-emitting diode AMOLED display panel, an AMOLED display device and an AMOLED film layer manufacturing method, which are used to improve the resolution of the AMOLED display, reduce the power consumption of the AMOLED display, and simplify the production of the AMOLED display process, improve the brightness attenuation matching of the AMOLED display, and improve the overall quality of the AMOLED display. The AMOLED display panel includes a substrate, an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer, a cathode layer and a cathode protection layer, wherein the hole transport layer is a continuous and uninterrupted film with the same thickness everywhere layer; and/or the cathodic protection layer is a continuous and uninterrupted film layer with the same thickness everywhere.

Description

A kind of AMOLED display panel and film layer manufacturing method, display device

technical field

The invention relates to the field of display technology, in particular to an AMOLED display panel, a method for manufacturing a film layer, and a display device.

Background technique

Compared with traditional LCD panels, Active Matrix Organic Light Emitting Diode (AMOLED) has the advantages of fast response, high contrast, wide viewing angle, excellent display effect and low power consumption. AMOLED has the characteristics of self-illumination and does not need to use a backlight, so it can be made thinner and lighter than Thin Film Transistor Liquid Crystal Display (TFT-LCD), and AMOLED without a backlight can save TFT-LCD Three to four percent of the cost of the backlight module.

Because AMOLED is self-luminous, different pixels will have different aging degrees during the aging process, resulting in different brightness, which may cause afterimages on the display screen. The brightness attenuation of the blue sub-pixel is higher than that of the red sub-pixel and green sub-pixel. The brightness decays faster. In the prior art, in order to solve the afterimage that occurs after a period of use of the AMOLED display screen, the usual method is to reduce the current density by increasing the area of the blue sub-pixel light-emitting layer 13, that is, the B-pixel light-emitting layer 13. Therefore, the brightness attenuation of the blue sub-pixel is compensated. As shown in FIG. 12, that is, the area of the light-emitting layer 12 of the G pixel, and the increase in the area of the light-emitting layer of the blue sub-pixel will lead to a decrease in the overall resolution of the AMOLED display.

To sum up, the overall resolution of the AMOLED display in the prior art is low, and the overall quality of the AMOLED display is poor.

Contents of the invention

The present invention provides an active matrix organic light-emitting diode (AMOLED) display panel, an AMOLED display device, and an AMOLED film layer manufacturing method, which are used to improve the resolution of the AMOLED display, reduce the power consumption of the AMOLED display, and simplify the production of the AMOLED display process, improve the brightness attenuation matching of the AMOLED display, and improve the overall quality of the AMOLED display.

An active matrix organic light emitting diode AMOLED display panel provided according to the present invention includes a substrate, an anode layer, a hole transport layer, a light emitting layer, an electron transport layer, a cathode layer and a cathode protection layer, wherein the hole transport layer It is a continuous and uninterrupted film layer with the same thickness everywhere; and/or the cathodic protection layer is a continuous and uninterrupted film layer with the same thickness everywhere.

An active matrix organic light-emitting diode AMOLED display panel provided by the present invention, because the AMOLED display panel includes a substrate, an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer, a cathode layer and a cathode protection layer, wherein the holes The transmission layer is a continuous film layer with the same thickness everywhere; and/or the cathodic protection layer is a continuous film layer with the same thickness everywhere, which can improve the resolution of the AMOLED display and reduce the power consumption of the AMOLED display , Simplify the production process of the AMOLED display, improve the brightness attenuation matching of the AMOLED display, and improve the overall quality of the AMOLED display.

The present invention also provides an AMOLED display device, which comprises the above-mentioned AMOLED display panel.

An AMOLED display device provided by the present invention includes the above-mentioned AMOLED display panel, so the display device can improve the resolution of the AMOLED display, reduce the power consumption of the AMOLED display, simplify the production process of the AMOLED display, and improve the AMOLED display. Screen brightness attenuation matching, improve the overall quality of AMOLED display.

The present invention also provides a method for making an AMOLED film layer, the method comprising:

Fabricate an anode layer and a hole transport layer sequentially on the substrate;

On the hole transport layer, the luminescent layer, the electron transport layer, the cathode layer and the cathodic protection layer are fabricated sequentially; wherein, the hole transport layer is a continuous and uninterrupted film layer with the same thickness everywhere; and/or the cathodic protection A layer is a continuous and uninterrupted layer of the same thickness everywhere.

A kind of AMOLED film layer manufacturing method provided by the present invention, owing to make anode layer and hole transport layer successively on substrate; Make light-emitting layer, electron transport layer, cathode layer and cathodic protective layer successively on hole transport layer; Wherein, The hole transport layer is a continuous film layer with the same thickness everywhere; and/or the cathodic protection layer is a continuous film layer with the same thickness everywhere, which can improve the resolution of the AMOLED display screen and reduce the Reduce the power consumption of the AMOLED display, simplify the production process of the AMOLED display, improve the brightness attenuation matching of the AMOLED display, and improve the overall quality of the AMOLED display.

Description of drawings

FIG. 1 is a schematic diagram of pixel arrangement of an AMOLED display screen in the prior art;

FIG. 2 is a schematic structural diagram of an AMOLED display panel provided by an embodiment of the present invention;

3 is a graph showing the relationship between the thickness of the cathodic protection layer and the luminous intensity of the light-emitting layer in the AMOLED display panel provided by an embodiment of the present invention;

FIG. 4 is a schematic structural diagram of an AMOLED display panel in the prior art;

Fig. 5 is a schematic diagram of an evaporation mask used when making the cathodic protection layer in the AMOLED display panel of Fig. 4;

FIG. 6 is a schematic diagram of an evaporation mask used in making the cathodic protection layer in the AMOLED display panel provided by the embodiment of the present invention;

FIG. 7 is a schematic structural diagram of an AMOLED display panel provided by another embodiment of the present invention;

FIG. 8 is a schematic structural diagram of an AMOLED display panel provided by another embodiment of the present invention;

FIG. 9 is a schematic structural diagram of an AMOLED display panel provided by another embodiment of the present invention;

FIG. 10 is a schematic diagram of an AMOLED display device provided by an embodiment of the present invention.

Detailed ways

Embodiments of the present invention provide an active matrix organic light-emitting diode AMOLED display panel, an AMOLED display device, and a method for manufacturing an AMOLED film layer, which are used to improve the resolution of the AMOLED display, reduce the power consumption of the AMOLED display, and simplify the AMOLED display. Advanced production technology, optimize the brightness attenuation matching of AMOLED display, and improve the overall quality of AMOLED display.

A detailed introduction of the technical solutions provided by specific embodiments of the present invention is given below.

As shown in FIG. 2 , an AMOLED display panel provided by a specific embodiment of the present invention includes: a substrate 20 , an anode layer 21 , a hole transport layer 22 , a light emitting layer, an electron transport layer 24 , a cathode layer 25 and a cathode protection layer 26 , wherein, the cathodic protection layer 26 is a continuous and uninterrupted film layer with the same thickness everywhere, and the light-emitting layer includes an R pixel light-emitting layer 231, a G pixel light-emitting layer 232 and a B pixel light-emitting layer 233, wherein the cathodic protection layer 26 can be selected from Alq ₃ (quinoline aluminum) and other organic materials, or CaO, SiO ₂ and other ceramic materials.

The method for manufacturing an AMOLED film layer provided by the embodiment of the present invention includes: sequentially manufacturing an anode layer 21 and a hole transport layer 22 on a substrate 20; sequentially manufacturing a light emitting layer, an electron transport layer 24, a cathode layer 25, and Cathodic protection layer 26; wherein the cathode protection layer 26 is a continuous and uninterrupted film layer with the same thickness everywhere, and the light emitting layer includes an R pixel light emitting layer 231, a G pixel light emitting layer 232 and a B pixel light emitting layer 233.

The thickness selection criterion of the cathodic protection layer 26 in the specific embodiment of the present invention is: the thickness of the cathodic protection layer 26 optimizes the light coupling efficiency of the light emitting layer 233 of the B pixel. Since the light-emitting wavelengths of the R pixel light-emitting layer 231, the G-pixel light-emitting layer 232, and the B-pixel light-emitting layer 233 are different, the thickness of the cathodic protection layer 26 made when the optical coupling efficiency of the B-pixel light-emitting layer 233 is optimal, the R pixel emits light. The optical coupling efficiency of layer 231 and G pixel light emitting layer 232 is average.

Specifically, Table 1 shows the relationship between the thickness of the cathodic protection layer and the luminous intensity of each pixel's light-emitting layer in an AMOLED display panel provided by an embodiment of the present invention.

Table 1

Thickness of cathodic protection layer Luminous intensity of light-emitting layer of B pixel G pixel light-emitting layer luminous intensity Luminous intensity of the light-emitting layer of the R pixel 55 11 160 30 65 13 140 30 75 15.1 120 40 85 16.6 100 30 95 17.2 100 30 105 16.8 100 30 115 15.6 100 20 125 13.8 120 20 135 11.9 140 20 145 10.1 165 15

As shown in Table 1, when the thickness of the cathodic protection layer 26 is 55nm, the luminous intensity of the B-pixel light-emitting layer 233 is 11 candela, the luminous intensity of the G-pixel light-emitting layer 232 is 160 candela, and the luminous intensity of the R-pixel light-emitting layer 231 is 30 candela; when the thickness of the cathode protection layer 26 is 65 nm, the luminous intensity of the B pixel light emitting layer 233 is 13 candela, the luminous intensity of the G pixel light emitting layer 232 is 140 candela, and the luminous intensity of the R pixel light emitting layer 231 is 30 candela; When the thickness of the cathodic protection layer 26 is 75 nm, the luminous intensity of the B pixel light emitting layer 233 is 15.1 candela, the luminous intensity of the G pixel light emitting layer 232 is 120 candela, and the luminous intensity of the R pixel light emitting layer 231 is 40 candela; When the thickness of the layer 26 is 85nm, the luminous intensity of the B pixel light emitting layer 233 is 16.6 candela, the luminous intensity of the G pixel light emitting layer 232 is 100 candela, and the luminous intensity of the R pixel light emitting layer 231 is 30 candela; when the cathode protection layer 26 When the thickness is 95nm, the luminous intensity of the B-pixel light-emitting layer 233 is 17.2 candela, the luminous intensity of the G-pixel light-emitting layer 232 is 100 candela, and the luminous intensity of the R-pixel light-emitting layer 231 is 30 candela; when the thickness of the cathode protection layer 26 is 105nm , the luminous intensity of the B pixel light-emitting layer 233 is 16.8 candela, the luminous intensity of the G pixel light-emitting layer 232 is 100 candela, and the luminous intensity of the R pixel light-emitting layer 231 is 30 candela; when the thickness of the cathode protection layer 26 is 115nm, B The luminous intensity of the pixel light emitting layer 233 is 15.6 candela, the luminous intensity of the G pixel light emitting layer 232 is 100 candela, and the luminous intensity of the R pixel light emitting layer 231 is 20 candela; when the thickness of the cathode protection layer 26 is 125nm, the B pixel light emitting layer The luminous intensity of 233 is 13.8 candela, the luminous intensity of G pixel light emitting layer 232 is 120 candela, and the luminous intensity of R pixel light emitting layer 231 is 20 candela; when the thickness of cathode protection layer 26 is 135nm, the luminous intensity of B pixel light emitting layer 233 The intensity is 11.9 candela, the luminous intensity of the G pixel light emitting layer 232 is 140 candela, and the luminous intensity of the R pixel light emitting layer 231 is 20 candela; when the thickness of the cathode protection layer 26 is 145nm, the luminous intensity of the B pixel light emitting layer 233 is 10.1 The luminous intensity of the light emitting layer 232 of the G pixel is 165 candela, and the luminous intensity of the light emitting layer 231 of the R pixel is 15 candela.

The corresponding relationship between the thickness of the cathodic protection layer and the luminous intensity of the light-emitting layer is shown in Figure 3, where 231 represents the luminous intensity of the light-emitting layer of the R pixel, 232 represents the luminous intensity of the light-emitting layer of the G pixel, and 233 represents the luminous intensity of the light-emitting layer of the B pixel. It can be seen from Table 1 and FIG. 3 that when the light coupling efficiency of the B pixel light emitting layer 233 is the best, the thickness of the cathodic protection layer is 95nm; when the light coupling efficiency of the G pixel light emitting layer 232 is the best, the thickness of the cathodic protection layer is 55nm and 145nm; when the light coupling efficiency of the R pixel light emitting layer 231 is optimal, the thickness of the cathodic protection layer is 75nm. The thickness of the cathodic protection layer in the specific embodiment of the present invention is selected as 95nm, which ensures that the light coupling efficiency of the B pixel light emitting layer 233 is optimal, while the light coupling efficiency of the R pixel light emitting layer 231 and the G pixel light emitting layer 232 is average.

Preferably, in the actual production process, in combination with Table 1 and Figure 3, the specific embodiment of the present invention provides an optimal thickness range of the cathodic protection layer, and the thickness range is 75nm-115nm. If the thickness of the cathodic protection layer continues to increase, the luminous intensity of the R pixel luminous layer, the luminous intensity of the G pixel luminous layer and the luminous intensity of the B pixel luminous layer will change periodically, and there are peaks and troughs in this cycle. As can be seen from Table 1, the thickness of the cathodic protection layer is a cycle from 55nm to 135nm, and the thickness range of the cathodic protection layer in the specific embodiment of the present invention is not limited to 75nm-115nm, can be based on this thickness range, according to actual The production process is periodically increased.

As shown in FIG. 4 , the thickness of the cathodic protection layer 26 in the prior art is different, and the cathodic protection layer 26 is a discontinuous and intermittent film layer. In the prior art, the B pixel light emitting layer 233 has a larger area than the R pixel light emitting layer 231 and the G pixel light emitting layer 232 . The manufacturing process of this cathodic protection layer needs 3 evaporation masks 51, 52 and 53, as shown in Figure 5, wherein the evaporation mask 51 is used to make the cathode protection layer on the R pixel light-emitting layer, and the evaporation mask Membrane 51 includes a plurality of openings 511 at the level of R pixels; evaporation mask 52 is used to make a cathodic protection layer on the light-emitting layer of G pixels, and evaporation mask 52 includes a plurality of openings for G Pixel-level openings 522 ; evaporation mask 53 is used to make a cathodic protection layer on the light-emitting layer of B pixels, and evaporation mask 53 includes a plurality of openings 533 with B-pixel levels. In the prior art, both the production of the mask itself and the process control during use are very difficult, and the production of multilayer films will also complicate the production process.

Making the cathodic protection layer in the embodiment of the present invention includes selecting an evaporation mask with the same size as the display area of the panel to deposit the cathodic protection layer on the cathode layer. As shown in FIG. 6 , the evaporation mask 60 includes a plurality of The opening is an opening 61 having the same size as the display area of the display panel. Therefore, in the embodiment of the present invention, when fabricating the cathodic protection layer, only one mask is needed, and the opening of the mask is the same size as the display area of the panel, and the manufacturing process is simple.

The AMOLED display panel in the prior art and the AMOLED display panel provided by the embodiment of the present invention are tested, and the obtained test data are shown in Table 2.

Table 2

project current technology Embodiment of the invention Brightness of red light (cd/m ² ) 62 62 Green brightness (cd/m ² ) 187 187 Blue light brightness (cd/m ² ) 51 51 Brightness of white light (cd/m ² ) 300 300 Red light chromaticity (x, y) (0.65,0.33) (0.65,0.33) Green chromaticity (x, y) (0.33,0.65) (0.33,0.65) Blue light chromaticity (x, y) (0.15,0.12) (0.15,0.12) White light chromaticity (x, y) (0.33,0.33) (0.33,0.33) Red light efficiency (cd/A) 15 15 Green light efficiency (cd/A) 30 30 Blue light efficiency (cd/A) 5 10 Red photocurrent (mA) 41 41 Green photocurrent (mA) 62 62 Blue light current (mA) 25.5 12.8 Red light area (mm ² ) 0.01 0.01

Green light area (mm ² ) 0.01 0.01 Blue light area (mm ² ) 0.02 0.01 Red light lifetime (hours) 50 50 Green light lifetime (hours) 50 50 Blu-ray lifetime (hours) 50 50

It can be seen from Table 2 that the brightness and chromaticity of red light, green light and blue light in the AMOLED display panel provided by the embodiment of the present invention remain unchanged, that is, the white balance remains unchanged; compared with the prior art, the present invention In the AMOLED display panel provided by the embodiment, the efficiency of blue light is doubled, and the driving current of blue light is doubled, that is, the improvement of blue light efficiency and the reduction of current can achieve the same brightness, thus reducing power consumption; Compared with the prior art, the area of blue light in the AMOLED display panel provided by the embodiment of the present invention is doubled, so that the resolution is improved compared with the prior art; in the AMOLED display panel provided by the embodiment of the present invention, the blue light area When the area and efficiency are changed, the lifetimes of red light, green light and blue light are still consistent, so the brightness attenuation of the AMOLED display panel provided by the embodiment of the present invention is also matched when the power consumption is reduced and the resolution is improved. .

Therefore, in the AMOLED display panel provided by the embodiment of the present invention, the resolution of the AMOLED display is improved, the power consumption of the AMOLED display is reduced, and at the same time, the brightness attenuation of the AMOLED display is matched. The manufacturing process is also simplified, so that the overall quality of the AMOLED display is improved.

As shown in Figure 7, an AMOLED display panel provided by another specific embodiment of the present invention includes: a substrate 20, an anode layer 21, a hole transport layer 22, a light emitting layer, an electron transport layer 24, a cathode layer 25 and a cathode protection layer 26, wherein the hole transport layer 22 is a continuous and uninterrupted film layer with the same thickness everywhere, and the light emitting layer includes an R pixel light emitting layer 231 , a G pixel light emitting layer 232 and a B pixel light emitting layer 233 .

The AMOLED film layer manufacturing method provided in this embodiment includes: sequentially manufacturing an anode layer 21 and a hole transport layer 22 on a substrate 20; sequentially manufacturing a light emitting layer, an electron transport layer 24, a cathode layer 25, and a cathode Protective layer 26; wherein the hole transport layer 22 is a continuous and uninterrupted film layer with the same thickness everywhere, and the light emitting layer includes an R pixel light emitting layer 231, a G pixel light emitting layer 232 and a B pixel light emitting layer 233.

The hole transport layer 22 in this embodiment is a continuous and uninterrupted film layer with the same thickness everywhere, and the thickness selection standard of the hole transport layer 22 is also: the thickness of the hole transport layer 22 is such that the light of the B pixel light-emitting layer 233 The coupling efficiency is optimal, and the light coupling efficiency of the R pixel light emitting layer 231 and the G pixel light emitting layer 232 is average. When the thickness of the hole transport layer 22 in this embodiment is 37 nm, the luminous intensity of the B pixel light emitting layer 233 is 10.97 candela, the luminous intensity of the G pixel light emitting layer 232 is 4.6 candela, and the luminous intensity of the R pixel light emitting layer 231 is 3.7 candela. candela, and when the thickness of the hole transport layer 22 is 85nm, the luminous intensity of the G pixel light emitting layer 232 is 18.4 candela, the luminous intensity of the B pixel light emitting layer 233 is less than 10.97 candela, when the thickness of the hole transport layer 22 is 140nm, R The luminous intensity of the pixel light-emitting layer 231 is 10.4 candela, and the luminous intensity of the B-pixel light-emitting layer 233 is less than 10.97 candela, that is, when the thickness of the hole transport layer 22 is 37 nm, the light coupling efficiency of the B-pixel light-emitting layer 233 is the best, and the R pixel The light coupling efficiency of the light emitting layer 231 and the G pixel light emitting layer 232 is average, and the thickness of the hole transport layer 22 is selected to be 37 nm in this embodiment.

Preferably, the manufacturing of the hole transport layer in this embodiment includes selecting an evaporation mask whose openings are the same size as the display area of the panel to deposit the hole transport layer on the anode layer. Likewise, in this embodiment, only one mask is needed when making the hole transport layer, and the opening of the mask has the same size as the display area of the panel, and the manufacturing process is simple.

The AMOLED display panel prepared by this embodiment is tested together with the AMOLED display panel in the prior art, and the data shown in Table 2 can also be obtained. Therefore, the AMOLED display panel provided by this embodiment, the AMOLED display panel The resolution is improved, the power consumption of the AMOLED display is reduced, and the brightness attenuation of the AMOLED display is also matched, and the preparation process of the AMOLED display panel is also simplified. In this way, the overall quality of the AMOLED display is improved. uplifted.

As shown in FIG. 8 , an AMOLED display panel provided by another specific embodiment of the present invention includes: a substrate 20, an anode layer 21, a hole transport layer 22, a light emitting layer, an electron transport layer 24, a cathode layer 25 and a cathode protection layer 26, wherein the hole transport layer 22 and the cathodic protection layer 26 are continuous and uninterrupted film layers with the same thickness everywhere, and the light emitting layer includes an R pixel light emitting layer 231, a G pixel light emitting layer 232 and a B pixel light emitting layer 233.

The AMOLED film layer manufacturing method provided in this embodiment includes: sequentially manufacturing an anode layer 21 and a hole transport layer 22 on a substrate 20; sequentially manufacturing a light emitting layer, an electron transport layer 24, a cathode layer 25, and a cathode Protective layer 26; wherein the hole transport layer 22 and the cathode protection layer 26 are film layers with the same thickness everywhere and continuous and uninterrupted, and the light emitting layer includes an R pixel light emitting layer 231, a G pixel light emitting layer 232 and a B pixel light emitting layer 233.

The choice of the thickness of the hole transport layer 22 and the cathode protection layer 26 in the AMOLED display panel provided by the third embodiment of the present invention is the same as any one of the above-mentioned embodiments, and will not be repeated here. Similarly, the AMOLED prepared by using this embodiment The display panel is tested together with the AMOLED display panel in the prior art, and the data shown in Table 2 can be obtained. Therefore, in the AMOLED display panel provided by this embodiment, the resolution of the AMOLED display screen has been improved, and the AMOLED display screen The power consumption of the AMOLED display panel is reduced, and at the same time, the brightness attenuation of the AMOLED display panel is also matched, and the manufacturing process of the AMOLED display panel is also simplified, so that the overall quality of the AMOLED display panel is improved.

As shown in FIG. 9, in the AMOLED display panel provided by another embodiment, the micromirror 90 is fabricated by inkjet process on the B pixel light-emitting layer 233, and the manufacturing method of other layers in the AMOLED display panel is the same as any of the above-mentioned embodiments. . Because the micromirror 90 can better refract and transmit light, thereby obtaining greater light coupling output, so under the same driving current standard, the light coupling efficiency of the B pixel light-emitting layer 233 is improved, that is, under the same light output condition, The driving current required for the B pixel light emitting layer 233 is reduced.

Similarly, the AMOLED display panel prepared by this embodiment is tested together with the AMOLED display panel in the prior art, and the data shown in Table 2 can be obtained. Therefore, the AMOLED display panel provided by this embodiment, AMOLED display The resolution of the screen has been improved, the power consumption of the AMOLED display has been reduced, and the brightness attenuation of the AMOLED display has also been matched, and the overall quality of the AMOLED display has been improved.

The specific embodiment of the present invention also provides an AMOLED display device, which includes the above-mentioned AMOLED display panel, and the AMOLED display device provided by the specific embodiment of the present invention may be a display, as shown in FIG. 10 .

Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and spirit of the present invention. In this way, if these modifications and variations of the present invention belong to the set of claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.

Claims (10)

1. An active matrix organic light-emitting diode AMOLED display panel, comprising a substrate, an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer, a cathode layer and a cathode protection layer, wherein the hole transport layer is everywhere A continuous and uninterrupted film layer with the same thickness; and/or the cathodic protection layer is a continuous and uninterrupted film layer with the same thickness everywhere. 2. The AMOLED display panel according to claim 1, wherein the light emitting layer comprises a plurality of R pixel light emitting layers, G pixel light emitting layers and B pixel light emitting layers, the R pixel light emitting layer, the G pixel light emitting layer The area is the same as that of the light emitting layer of the B pixel. 3. The AMOLED display panel according to claim 2, wherein the light emitting layer further comprises a micromirror disposed on the light emitting layer of the B pixel. 4. The AMOLED display panel according to claim 1, wherein the cathode protection layer has a thickness of 75nm-115nm. 5. An AMOLED display device, characterized in that the device comprises the AMOLED display panel according to any one of claims 1-4. 6. A method for making an AMOLED film layer, characterized in that the method comprises: Fabricate an anode layer and a hole transport layer sequentially on the substrate; On the hole transport layer, the luminescent layer, the electron transport layer, the cathode layer and the cathodic protection layer are fabricated sequentially; wherein, the hole transport layer is a continuous and uninterrupted film layer with the same thickness everywhere; and/or the cathodic protection A layer is a continuous and uninterrupted layer of the same thickness everywhere. 7. The method according to claim 6, characterized in that, when making the hole transport layer, comprising: selecting an evaporation mask with the same size as the display area of the panel to deposit holes on the anode layer transport layer. 8. The method according to claim 6, characterized in that, when making the cathodic protection layer, comprising: selecting an evaporation mask with the same size as the display area of the panel to deposit the cathodic protection layer on the cathode layer . 9. The method according to claim 6, wherein the light emitting layer comprises a plurality of R pixel light emitting layers, G pixel light emitting layers and B pixel light emitting layers. 10. The method according to claim 9, further comprising: Fabricating a micromirror on the light-emitting layer of the B pixel.