CN103915526B - A kind of avalanche photodiode coupler carrying heat abstractor - Google Patents
A kind of avalanche photodiode coupler carrying heat abstractor Download PDFInfo
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- CN103915526B CN103915526B CN201410103619.5A CN201410103619A CN103915526B CN 103915526 B CN103915526 B CN 103915526B CN 201410103619 A CN201410103619 A CN 201410103619A CN 103915526 B CN103915526 B CN 103915526B
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- 239000000758 substrate Substances 0.000 claims description 20
- 239000013307 optical fiber Substances 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 abstract description 28
- 239000000835 fiber Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000009434 installation Methods 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
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- Light Receiving Elements (AREA)
Abstract
本发明公开了一种自带散热装置的雪崩光电二极管耦合器，包括散热装置和耦合器本体；所述散热装置由基板和肋片构成，基板上有通孔；所述耦合器本体一侧为光纤跳线接头，另一侧为APD接头；光纤跳线接头内部有变径通孔；APD接头内部有空腔；其特征在于：在耦合器本体上增加了散热装置。本发明加强了APD散热效果，结构合理，加工方便，安装简单，满足批量生产、使用的需要。
The invention discloses an avalanche photodiode coupler with a heat sink, which includes a heat sink and a coupler body; the heat sink is composed of a base plate and fins, and there are through holes on the base plate; one side of the coupler body is The fiber jumper connector has an APD connector on the other side; there is a variable diameter through hole inside the fiber jumper connector; there is a cavity inside the APD connector; it is characterized in that a heat dissipation device is added to the coupler body. The invention enhances the heat dissipation effect of the APD, has reasonable structure, convenient processing and simple installation, and meets the needs of mass production and use.
Description
技术领域 technical field
本发明属于光电检测技术领域，具体涉及一种自带散热装置的雪崩光电二极管耦合器。 The invention belongs to the technical field of photoelectric detection, and in particular relates to an avalanche photodiode coupler with a heat dissipation device.
背景技术 Background technique
雪崩光电二极管（APD）具有响应速度快、量子效率高、噪声小等优点，是微弱光信号转变成电信号的重要器件。但APD的增益会随该器件所处环境温度的变化而发生波动，影响应用系统的稳定性，因而保持其工作在恒温状态十分重要。 Avalanche photodiodes (APDs) have the advantages of fast response, high quantum efficiency, and low noise. They are important devices for converting weak optical signals into electrical signals. However, the gain of the APD will fluctuate with the change of the ambient temperature of the device, which will affect the stability of the application system, so it is very important to keep its work in a constant temperature state.
为了保持其增益稳定性，可将微型半导体制冷器与APD整体封装制成APD组件，如申请号为201110309963.6就公开了一种带温控功能的APD-TIA同轴型光电组件及制造方法，在工作过程中，根据环境温度的变化使得半导体制冷器制冷或制热，从而使APD工作温度保持恒定。但当微型半导体制冷器制冷时，所产生的热量如不能快速向周围环境散失，制冷效果将受到极大削弱。现有的散热方式主要依赖APD耦合器自然散热，效率较低。 In order to maintain its gain stability, the micro-semiconductor cooler and the APD can be integrally packaged to make an APD component. For example, the application number 201110309963.6 discloses an APD-TIA coaxial photoelectric component with temperature control function and its manufacturing method. During the working process, the semiconductor refrigerator is cooled or heated according to the change of the ambient temperature, so that the working temperature of the APD is kept constant. However, when the miniature semiconductor refrigerator is cooling, if the generated heat cannot be quickly dissipated to the surrounding environment, the cooling effect will be greatly weakened. The existing heat dissipation method mainly relies on the natural heat dissipation of the APD coupler, and the efficiency is low.
发明内容 Contents of the invention
本发明的目的是提供一种自带散热装置的雪崩光电二极管耦合器，来弥补现有耦合器结构设计的不足，以满足生产和应用的需求。 The purpose of the present invention is to provide an avalanche photodiode coupler with its own cooling device to make up for the shortcomings of the existing coupler structure design and meet the requirements of production and application.
本发明一种自带散热装置的雪崩光电二极管耦合器，包括散热装置和耦合器本体；所述散热装置由基板和肋片构成，基板上有通孔；所述耦合器本体一侧为光纤跳线接头，另一侧为APD接头；光纤跳线接头内部有变径通孔； APD接头内部有空腔；其特征在于：在耦合器本体上增加了散热装置。 The present invention is an avalanche photodiode coupler with heat dissipation device, comprising a heat dissipation device and a coupler body; the heat dissipation device is composed of a base plate and fins, and there are through holes on the base plate; The other side is the APD connector; there is a variable diameter through hole inside the fiber jumper connector; there is a cavity inside the APD connector; it is characterized in that a heat dissipation device is added to the coupler body.
作为本发明的优选方案：散热装置由主散热装置和辅助散热装置组成，主散热装置与辅助散热装置的基板尺寸相同，两者紧密贴合，且主散热装置位于辅助散热装置上方。 As a preferred solution of the present invention: the heat dissipation device is composed of a main heat dissipation device and an auxiliary heat dissipation device, the main heat dissipation device and the auxiliary heat dissipation device have the same substrate size, the two are closely attached, and the main heat dissipation device is located above the auxiliary heat dissipation device.
本发明一种自带散热装置的雪崩光电二极管耦合器与现有耦合器相比较，由于本发明在现有技术的基础上，加装了散热装置，可增大散热量，避免热量的集聚。本发明耦合器结构合理，加工方便，安装简单，满足批量生产、使用的需要。 Compared with the existing coupler, the avalanche photodiode coupler with heat dissipation device of the present invention is equipped with a heat dissipation device on the basis of the prior art, which can increase heat dissipation and avoid heat accumulation. The coupler of the invention has reasonable structure, convenient processing and simple installation, and meets the needs of mass production and use.
附图说明 Description of drawings
图1为本发明一种自带散热装置的雪崩光电二极管耦合器的剖视图； Fig. 1 is a cross-sectional view of an avalanche photodiode coupler with its own cooling device in the present invention;
图2为耦合器本体的剖视图； Fig. 2 is a sectional view of the coupler body;
图3为内芯的剖视图； Fig. 3 is a sectional view of the inner core;
图4为主散热装置与辅助散热装置的剖视图。 Fig. 4 is a cross-sectional view of the main heat dissipation device and the auxiliary heat dissipation device.
具体实施方式 detailed description
实施例Example 11 ：:
图1为本发明一种自带散热装置的雪崩光电二极管耦合器的剖视图；图2为耦合器本体的剖视图；图3为内芯的剖视图；图4为主散热装置与辅助散热装置的剖视图。如上述附图所示，本发明一种自带散热装置的雪崩光电二极管耦合器，包括散热装置1和耦合器本体2。 Fig. 1 is a cross-sectional view of an avalanche photodiode coupler with a heat sink of the present invention; Fig. 2 is a cross-sectional view of the coupler body; Fig. 3 is a cross-sectional view of an inner core; Fig. 4 is a cross-sectional view of a main heat sink and an auxiliary heat sink. As shown in the above-mentioned drawings, an avalanche photodiode coupler with a heat dissipation device of the present invention includes a heat dissipation device 1 and a coupler body 2 .
所述散热装置1由主散热装置4和辅助散热装置5组成。主散热装置4材质为铝型材，尺寸为50mm×30mm×22.5mm；基板4a厚度4.6mm；在基板4a上，左右两侧各均布3片肋片4c，高度均为17.9mm，厚度均为1.1mm，间距为7mm；在基板4a中心上有一个带螺纹的通孔4b，直径18mm，螺距为0.75mm；两个螺孔4d位于基板4a纵向中心线上，距离基板4a中心均为12.25mm，螺纹规格为M3×0.5。辅助散热装置5材质为铝型材，尺寸为50mm×30mm×3mm；基板5a厚度1.5mm；在基板5a上，左右两侧各均布4片肋片5c，高度均为1.5mm，厚度均为1mm，间距为1.7mm；在基板5a中心上有一个直径为18mm的通孔5b；两个直径为3mm的通孔5d位于基板5a纵向中心线上，距离基板5a中心均为12.25mm。装配时使用M3×0.5螺钉连接主散热装置4和辅助散热装置5。 The heat dissipation device 1 is composed of a main heat dissipation device 4 and an auxiliary heat dissipation device 5 . The main cooling device 4 is made of aluminum profile, with a size of 50mm×30mm×22.5mm; the thickness of the substrate 4a is 4.6mm; on the substrate 4a, three ribs 4c are evenly distributed on the left and right sides, with a height of 17.9mm and a thickness of 1.1mm, with a pitch of 7mm; there is a threaded through hole 4b in the center of the substrate 4a, with a diameter of 18mm and a pitch of 0.75mm; two screw holes 4d are located on the longitudinal centerline of the substrate 4a, and the distance from the center of the substrate 4a is 12.25mm , The thread specification is M3×0.5. The auxiliary cooling device 5 is made of aluminum profile, with a size of 50mm×30mm×3mm; the thickness of the substrate 5a is 1.5mm; on the substrate 5a, four ribs 5c are evenly distributed on the left and right sides, with a height of 1.5mm and a thickness of 1mm. , with a pitch of 1.7mm; a through hole 5b with a diameter of 18mm is provided in the center of the substrate 5a; two through holes 5d with a diameter of 3mm are located on the longitudinal centerline of the substrate 5a, and are both 12.25mm away from the center of the substrate 5a. Use M3×0.5 screws to connect the main cooling device 4 and the auxiliary cooling device 5 during assembly.
所述耦合器本体2由黄铜制成，表面镀铬，一侧为光纤跳线接头2a，另一侧为带外螺纹的APD接头2d。光纤跳线接头2a外部螺纹2f的规格为M8×0.75，上部开有一个宽度为2.2mm、高度为2mm的缺口2e，内部具有变径通孔2b，自上而下三个孔的直径分别为6.1mm、4.35mm和6.4mm，深度分别为3.8mm、2.75mm和1.7mm；光纤跳线接头2a可与FC光纤跳线接头连接。APD接头2d外部具有M18×0.75的外螺纹2g，与主散热装置4上的通孔4b连接，内部为空腔2c，直径为14mm，深度为6.5mm，用于放置APD。 The coupler body 2 is made of brass with a chrome-plated surface. One side is an optical fiber jumper connector 2a, and the other side is an APD connector 2d with external threads. The specification of the external thread 2f of the optical fiber jumper connector 2a is M8×0.75. There is a notch 2e with a width of 2.2mm and a height of 2mm on the upper part. There is a through hole 2b with a variable diameter inside. The diameters of the three holes from top to bottom are respectively 6.1mm, 4.35mm and 6.4mm, the depths are 3.8mm, 2.75mm and 1.7mm respectively; the fiber jumper connector 2a can be connected with the FC fiber jumper connector. The APD connector 2d has an external thread 2g of M18×0.75, which is connected to the through hole 4b on the main heat sink 4, and the interior is a cavity 2c with a diameter of 14mm and a depth of 6.5mm for placing the APD.
可在所述光纤跳线接头2a内安装内芯3；内芯3由直径分别为4.35mm和6.4mm的不锈钢圆柱3a构成，高度分别为6mm、1.5mm；内芯3内部具有变径通孔3b，自上而下，两个孔的直径分别为2.5mm、0.8mm，深度分别为6.5mm、1mm。 The inner core 3 can be installed in the optical fiber jumper connector 2a; the inner core 3 is composed of stainless steel cylinders 3a with diameters of 4.35mm and 6.4mm respectively, and the heights are 6mm and 1.5mm respectively; the inner core 3 has a variable diameter through hole 3b, from top to bottom, the diameters of the two holes are 2.5mm and 0.8mm respectively, and the depths are 6.5mm and 1mm respectively.
装配时，在空腔2c内部均匀的涂抹一层具有粘性的导热硅胶。 During assembly, a layer of viscous heat-conducting silica gel is uniformly applied inside the cavity 2c.
实施例Example 22 ：:
本实施例中，所述主散热装置4材质为黄铜；基板4a上，左右两侧各均布5片肋片4c，高度均为17.9mm，厚度均为1.1mm，间距为3.5mm；基板4a厚度4.6mm；本实施例中，其余部件结构与实施例1相同；本实施例可增强耦合器散热效果。 In this embodiment, the material of the main heat dissipation device 4 is brass; on the substrate 4a, five ribs 4c are evenly distributed on the left and right sides, the height is 17.9mm, the thickness is 1.1mm, and the spacing is 3.5mm; 4a has a thickness of 4.6 mm; in this embodiment, the structures of other components are the same as in embodiment 1; this embodiment can enhance the heat dissipation effect of the coupler.
实施例Example 33 ：:
本实施例中，所述光纤跳线接头2a内部具有变径通孔2b，自上而下，两个孔直径分别为6.1mm、2.5mm，深度分别为3.8mm、4.45mm，不安装内芯3，其余部件结构与实施例1相同。 In this embodiment, the optical fiber jumper connector 2a has a variable-diameter through hole 2b inside. From top to bottom, the diameters of the two holes are 6.1mm and 2.5mm, and the depths are 3.8mm and 4.45mm respectively. No inner core is installed. 3. The structure of other parts is the same as that of Embodiment 1.
实施例Example 44 ：:
本实施例中，不安装辅助散热装置5，其余部件结构与实施例1相同。 In this embodiment, the auxiliary cooling device 5 is not installed, and the structures of other components are the same as those in Embodiment 1.
Claims (1)
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| CN107204383B (en) * | 2016-03-17 | 2020-02-21 | 联华电子股份有限公司 | Cumulative avalanche photodetector element and method of making the same |
| CN107370009A (en) * | 2017-07-20 | 2017-11-21 | 成都聚芯光科通信设备有限责任公司 | Radiating efficiency can be improved is closely assembled optical fiber cooling mechanism |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2867589Y (en) * | 2005-06-09 | 2007-02-07 | 华南师范大学 | Secondary Packaging Device of Avalanche Photodiode for Infrared Light Detection |
| CN202979546U (en) * | 2012-11-12 | 2013-06-05 | 武汉维康科技有限责任公司 | Double-face radiator |
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| CN102412240A (en) * | 2011-10-13 | 2012-04-11 | 武汉华工正源光子技术有限公司 | APD-TIA coaxial photoelectric component with temperature control function and manufacturing method |
| CN103617968B (en) * | 2013-12-06 | 2016-01-20 | 中国电子科技集团公司第四十四研究所 | The packaging system of APD focal plane array chip |
| CN203774353U (en) * | 2014-03-20 | 2014-08-13 | 中国计量学院 | Avalanche photodiode coupler with cooling device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2867589Y (en) * | 2005-06-09 | 2007-02-07 | 华南师范大学 | Secondary Packaging Device of Avalanche Photodiode for Infrared Light Detection |
| CN202979546U (en) * | 2012-11-12 | 2013-06-05 | 武汉维康科技有限责任公司 | Double-face radiator |
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