CN103915330B - Substrate etching method - Google Patents
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- CN103915330B CN103915330B CN201310007774.2A CN201310007774A CN103915330B CN 103915330 B CN103915330 B CN 103915330B CN 201310007774 A CN201310007774 A CN 201310007774A CN 103915330 B CN103915330 B CN 103915330B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Abstract
The invention provides a substrate etching method. The substrate etching method comprises the following steps of etching a substrate, wherein etching gas is injected into a reaction chamber, an excitation power supply and a grid bias power supply are started to etch the substrate at preset etching depth; processing plasma, wherein the etching gas is stopped from being injected into the reaction chamber, meanwhile, processing gas is injected into the reaction chamber, the grid bias power supply is turned off, and the processing gas is used for removing a part of reaction by-products accumulated on the side wall of the substrate; the steps of etching the substrate is carried out cyclically for at least two times, and one time of the step of processing the plasma is carried out with at least one cyclical time in the total cyclical times in the step of etching the substrate as an interval. According to the substrate etching method, under the premise that substrate etched appearance with an ideal depth-to-width ratio is obtained, etching steps can be simplified, etching equipment does not need to be changed, and thus the manufacturing cost of the equipment can be lowered.
Description
Technical field
The present invention relates to microelectronics technology, particularly to a kind of substrate lithographic method.
Background technology
In recent years, with the increase of semiconductor device integrated level, the size of discrete component is gradually little
Type, this just has higher requirement to the etching technics etching shallow trench on substrate, with energy
Enough acquisitions have the substrate etch topography of preferable depth-to-width ratio.
At present, people are generally performed etching to substrate using a kind of method of seriality etching, i.e.
One step completes the total etching depth to substrate etching, and by adjusting exciting power, etching gas
The slickness to improve the sidewall profile of substrate groove for the parameter of the flow of (e.g., HeO) etc..
However, carrying out substrate etching technics, it is 32nm and following especially carrying out process node
Substrate etching technics when, byproduct of reaction produced by reaction can be in the hard mask of substrate groove
The side wall rapid accumulation of layer, leads to the opening size of substrate groove to diminish, thus causing entry into ditch
The quantity of the plasma in groove reduces, and then makes the critical size of substrate groove (as ditch groove width
Degree) drastically reduce with the increase of etching depth, thus cannot obtain that there is preferable depth-to-width ratio
Substrate etch topography.Further, since the byproduct of reaction being deposited on the wall of hard mask layer side is also
Electric charge on hard mask layer for the accumulation can be increased, electric field action produced by electric charge can lead to etc. from
The etching direction of daughter is deviateed towards trenched side-wall by original vertical direction, thus causing groove
Recessed etch topography is occurred on the wall of side.
In order to obtain preferable substrate etch topography, people are also using another kind of substrate etching side
Method, as shown in Fig. 2 carry out substrate during each operation for existing another kind substrate lithographic method
Groove pattern schematic diagram.This substrate lithographic method mainly includes following operation：
A () is using the etching procedure containing hydrogen halide.The substrate 102 of mask 101 will be exposed
Etch into desired depth.
B () uses the etching procedure of fluoro-gas.That is, etching gas are replaced by containing fluorine gas
Body, and etch substrate further.
(c) protecting film formation process.Method using sputtering forms protection on the substrate 102
Film 103, protecting film 103 is deposited on the top of mask 101 and the side wall of groove 104 and bottom.
(d) protecting film removing step.Only retain the protecting film on the side wall 104a of groove 104
103, and remaining protecting film 103 is removed.
E () repeat step (b), (c) and (d), until the groove of substrate reaches technique
Required etching depth.
Although above-mentioned substrate lithographic method can obtain to a certain extent has preferably deep width
The substrate etch topography of ratio, but, it is inevitably present problems with actual applications：
First, because the etch step of above-mentioned substrate lithographic method is numerous and diverse, being easily caused whole
Drop during substrate etching pollution granule, thus causing substrate to be contaminated, and then reduces
The yields of product.
Second, because the protecting film formation process of above-mentioned substrate lithographic method is the side using sputtering
Formula forms protecting film on substrate, and this mode needs to carry out particular design to etching apparatus, with
Make it have sputtering function, thus leading to the manufacturing cost of equipment to increase.
Content of the invention
It is contemplated that at least solving one of technical problem present in prior art it is proposed that one
Plant substrate lithographic method, it is obtaining the premise of the substrate etch topography with preferable depth-to-width ratio
Under, etch step not only can be simplified, and any change need not be made to etching apparatus, thus
The manufacturing cost of equipment can be reduced.
There is provided a kind of substrate lithographic method for realizing the purpose of the present invention, comprise the following steps：
Substrate etch step, is passed through etching gas to reaction chamber, and opens excitation power supply and partially
Voltage source, to etch predetermined etching depth to substrate；
Plasma treatment step, stops being passed through etching gas to reaction chamber, simultaneously to reaction
Chamber is passed through processing gas, and closes grid bias power supply, and described processing gas are deposited in for removing
A part of byproduct of reaction of substrate side wall；
Circulation carries out described substrate etch step at least twice, and with described substrate etch step
Cycle-index at least one times in global cycle number of times carries out once described corona treatment for interval
Step.
Wherein, described processing gas include oxygen, nitrogen or noble gases.
Wherein, in described plasma treatment step, the range of flow of described processing gas
In 100～600sccm.
Wherein, the scope of the exciting power of described excitation power supply is in 100～1000W.
Wherein, the scope of the chamber pressure of described reaction chamber is in 5～45mT.
Wherein, the time of described plasma treatment step is 5～20s.
Preferably, in described substrate etch step, described predetermined etching depth is more than or equal to
/ 3rd total etching depth and the total etching depth less than or equal to 2/3rds.
Wherein, described etching gas include primary response gas and assisted reaction gas, wherein institute
State the mixed gas that primary response gas includes chlorine, hydrogen bromide or chlorine and hydrogen bromide；Described
Assisted reaction gas includes the mixed gas of oxygen and helium, or includes oxygen, helium and contain
The mixed gas of fluorine gas.
Wherein, in described substrate etch step, the range of flow of described primary response gas exists
50～350sccm；The range of flow of the described assisted reaction gas in addition to oxygen is 50～150
sccm；The range of flow of described oxygen is in 5～30sccm；The exciting power of described excitation power supply
Scope in 600～1200W；The scope of the substrate bias power of described grid bias power supply exists
100～300W；The scope of the chamber pressure of described reaction chamber is in 10～45mT；Etch period
Scope in 10～40s.
Preferably, circulation carries out described substrate etch step twice, and carves in described substrate twice
Carry out once described plasma treatment step between erosion step；And
In the first time substrate etch step in described substrate etch step twice, described master is anti-
Answer the mixed gas that gas is chlorine and hydrogen bromide, described assisted reaction gas is oxygen and helium
Mixed gas；The flow of described chlorine is 250sccm；The flow of described hydrogen bromide is 60
sccm；The flow of described oxygen is 15sccm；The flow of described helium is 100sccm；Institute
The exciting power stating excitation power supply is 800W；The substrate bias power of described grid bias power supply is 200W；
The chamber pressure of described reaction chamber is 15mT；The scope of described etch period is in 18～25s；
The scope of described predetermined etching depth exists
In second substrate etch step in described substrate etch step twice, described master is anti-
Answer the mixed gas that gas is chlorine and hydrogen bromide, described assisted reaction gas is oxygen and helium
Mixed gas；The flow of described chlorine is 250sccm；The flow of described hydrogen bromide is 60
sccm；The flow of described oxygen is 15sccm；The flow of described helium is 100sccm；Institute
The exciting power stating excitation power supply is 800W；The substrate bias power of described grid bias power supply is 200W；
The chamber pressure of described reaction chamber is 15mT；The scope of described etch period is in 20～25s；
After completing described second substrate etch step, described total etching depth is
In described plasma treatment step, described processing gas are oxygen, described oxygen
Flow is 200sccm；The exciting power of described excitation power supply is 500W；Described reaction chamber
Chamber pressure be 15mT；Response time is 10s.
Preferably, circulation carries out described substrate etch step twice, and carves in described substrate twice
Carry out once described plasma treatment step between erosion step；And
In the first time substrate etch step in described substrate etch step twice, described master is anti-
Answer the mixed gas that gas is chlorine and hydrogen bromide, described assisted reaction gas is oxygen and helium
Mixed gas；The flow of described chlorine is 250sccm；The flow of described hydrogen bromide is 60
sccm；The flow of described oxygen is 15sccm；The flow of described helium is 100sccm；Institute
The exciting power stating excitation power supply is 800W；The substrate bias power of described grid bias power supply is 200W；
The chamber pressure of described reaction chamber is 15mT；The scope of described etch period is in 18～25s；
The scope of described predetermined etching depth exists
In second substrate etch step in described substrate etch step twice, described master is anti-
Answer the mixed gas that gas is chlorine and hydrogen bromide, described assisted reaction gas is oxygen and helium
Mixed gas；The flow of described chlorine is 250sccm；The flow of described hydrogen bromide is 60
sccm；The scope of the flow of described oxygen is in 5～13sccm；The flow of described helium is 100
sccm；The exciting power of described excitation power supply is 800W；The substrate bias power of described grid bias power supply
For 200W；The scope of the chamber pressure of described reaction chamber is in 5～10mT；During described etching
Between scope in 20～25s；After completing described second substrate etch step, described total
Etching depth is
In described plasma treatment step, described processing gas are oxygen, described oxygen
Flow is 200sccm；The exciting power of described excitation power supply is 500W；Described reaction chamber
Chamber pressure be 15mT；Response time is 10s.
The invention has the advantages that：
The substrate lithographic method that the present invention provides, its circulation carries out substrate etch step at least two
Secondary, and completing to carry out a plasma treatment step after substrate etch step at least one times,
That is, the substrate etching technics completing total etching depth is divided into the substrate repeatedly completing desired depth
Etch step, and after carrying out one or many substrate etch step interspersed carry out one inferior from
Daughter process step, this compared with prior art, not only etch step is simple, and need not be right
Etching apparatus makees any change, such that it is able to reduce the manufacturing cost of equipment.
It is additionally, since and close grid bias power supply during carrying out plasma treatment step,
That is, substrate bias power is zero, and this can neutralize the Partial charge of accumulation on the mask layer side wall of substrate,
Such that it is able to avoid the occurrence of the quarter of the plasma leading to because of electric field action produced by electric charge
Erosion direction is deviateed towards trenched side-wall by original vertical direction, thus causing to go out on trenched side-wall
The problem of existing recessed etch topography, and then the slickness of substrate sidewall profile can be improved.This
Outward, the place due to, during carrying out plasma treatment step, being passed through in reaction chamber
Process gases can effectively remove a part of byproduct of reaction of the mask layer side wall being deposited in substrate,
Opening size such that it is able to prevent substrate groove to a certain extent diminishes, and then can avoid
The critical size (as groove width) substrate groove drastically contracts with the increase of etching depth
Little problem, it is hereby achieved that have the substrate etch topography of preferable depth-to-width ratio.
Brief description
Fig. 1 is that the Electronic Speculum of the substrate etch topography being obtained using existing substrate etching technics is swept
Tracing；
Fig. 2 is the ditch flute profile that existing another kind substrate lithographic method carries out substrate during each operation
Looks schematic diagram；
A kind of FB(flow block) of the substrate lithographic method that Fig. 3 provides for the present invention；
The base completing to obtain after step S1 of the substrate lithographic method that Fig. 4 a provides for the present invention
The groove pattern schematic diagram of piece；
The base completing to obtain after step S2 of the substrate lithographic method that Fig. 4 b provides for the present invention
The groove pattern schematic diagram of piece；
The base completing to obtain after step S3 of the substrate lithographic method that Fig. 4 c provides for the present invention
The groove pattern schematic diagram of piece；And
Another kind of FB(flow block) of the substrate lithographic method that Fig. 5 provides for the present invention.
Specific embodiment
For making those skilled in the art more fully understand technical scheme, tie below
Close accompanying drawing that the substrate lithographic method of present invention offer is described in detail.
The FB(flow block) of the substrate lithographic method that Fig. 3 provides for the present invention.Refer to Fig. 3, should
Method is substrate etching technics to be divided into substrate etch step twice, that is,：First substrate etching step
Suddenly with the second substrate etch step, and between, i.e. complete the first substrate etching step
After rapid, and before carrying out the second substrate etch step, carry out a corona treatment step
Suddenly.Specifically, comprise the following steps：
Step S1, the first substrate etch step.In step sl, it is passed through quarter to reaction chamber
Erosion gas, and open excitation power supply and grid bias power supply, so that predetermined etching depth is etched to substrate.
Etching gas include primary response gas and assisted reaction gas, and wherein, primary response gas refers to gas
The relatively large gas of body flow, it can include chlorine, hydrogen bromide or both gaseous mixtures
Body；Assisted reaction gas refers to the relatively small gas of gas flow, its can include oxygen and
The mixed gas of helium, or include containing of oxygen, helium and sulfur fluoride, nitrogen fluoride etc.
The mixed gas of fluorine gas.
In actual applications, the range of flow of primary response gas is in 50～350sccm；Except oxygen
Outside assisted reaction gas range of flow in 50～150sccm；The range of flow of oxygen exists
5～30sccm；The scope of the exciting power of excitation power supply is in 600～1200W；Grid bias power supply
The scope of substrate bias power is in 100～300W；The scope of the chamber pressure of reaction chamber exists
10～45mT；The scope of etch period is in 10～40s.Preferably, primary response gas be chlorine and
The mixed gas of hydrogen bromide, assisted reaction gas is the mixed gas of oxygen and helium；And,
The flow of chlorine is 250sccm；The flow of hydrogen bromide is 60sccm；The flow of oxygen is 15
sccm；The flow of helium is 100sccm；The exciting power of excitation power supply is 800W；Bias
The substrate bias power of power supply is 200W；The chamber pressure of reaction chamber is 15mT；Etch period
Scope in 18～25s；The scope of predetermined etching depth exists
After completing step S1, as shown in fig. 4 a, in the side of the mask layer 21 of substrate 20
Pile up, on wall, the byproduct of reaction 22 having reaction to generate, and the groove of substrate 20 reaches predetermined quarter
Erosion depth, the ratio that this predetermined etching depth accounts for total etching depth can freely set as the case may be
Fixed it is preferable that predetermined etching depth be more than or equal to 1/3rd total etching depth and less than etc.
In 2/3rds total etching depth, to prevent from leading to covering in substrate because the response time is long
The byproduct of reaction piled up on the wall of film layer side is excessive.
Step S2, plasma treatment step.Stop being passed through etching gas to reaction chamber, with
When be passed through processing gas to reaction chamber, and close grid bias power supply (that is, substrate bias power is zero).
In step s 2, processing gas are used for removing a part of anti-of the mask layer side wall being deposited in substrate
Answer by-product, it can include the noble gases such as oxygen, nitrogen or helium, argon.
In actual applications, the range of flow of processing gas is in 100～600sccm；Excitation power supply swash
The scope encouraging power is in 100～1000W；The scope of the chamber pressure of reaction chamber exists
5～45mT；The scope in the response time of plasma treatment step is in 5～20s.
Preferably, processing gas are oxygen.In the present embodiment, the flow of oxygen is 200sccm；
The exciting power of excitation power supply is 500W；The chamber pressure of reaction chamber is 15mT；Reaction
Time is 10s.After completing step S2, as shown in Figure 4 b, the oxygen being passed through can be in substrate
Form passivation layer 23, for example, oxygen can be aoxidized with silicon chip on the inner surface of 20 groove
Reaction and silicon chip groove inner surface formed silicon oxide passivation layer.Carrying out follow-up base
During piece etch step, passivation layer 23 and the reaction by-product being deposited in mask layer 21 side wall
Thing 22 can form layer protective layer in the trenched side-wall of substrate, and this protective layer can effectively stop
Gas ions are towards the trenched side-wall direction etching of substrate 20, and are only oriented towards the trench bottom of substrate 20
Portion direction etches, such that it is able to avoid recessed etching shape on the trenched side-wall of substrate 20
Looks, and then the slickness of substrate sidewall profile can be improved.Additionally, the thickness of passivation layer 23
Adjusting reaction time, the chamber pressure of reaction chamber, the exciting power of excitation power supply can be passed through
And the parameter such as gas flow and set.
Additionally, remove the part reaction of the mask layer side wall being deposited in substrate by processing gas
By-product, can prevent the opening size of substrate groove from diminishing to a certain extent, such that it is able to
Avoid the occurrence of the critical size (as groove width) of substrate groove with the increase of etching depth and urgency
The problem that play is reduced, and then the substrate etch topography with preferable depth-to-width ratio can be obtained.And
And, due to closing grid bias power supply, i.e. substrate bias power is zero, during this can play and covering
The effect of the electric charge of accumulation on the wall of film layer side, such that it is able to avoid the occurrence of because of electricity produced by electric charge
The etching direction of field action and the plasma that leads to is by original vertical direction towards substrate
Trenched side-wall deviates, thus causing the problem recessed etch topography on trenched side-wall, enters
And the slickness of substrate sidewall profile can be improved.
Step S3, the second substrate etch step.In step s3, stop leading to reaction chamber
Enter processing gas, be passed through etching gas to reaction chamber simultaneously, and open grid bias power supply, with right
Substrate performs etching, until completing total etching depth.The specific work process of step S3 and step
S1 is similar, will not be described here.As illustrated in fig. 4 c, after step s 3 is completed, it is passivated
Layer 23 is gradually consumed with the increase of etching depth, or even is eliminated completely, and, pile up
The thickness of the byproduct of reaction 22 on mask layer 21 side wall is also gradually reduced, and remain
Byproduct of reaction can be purged in follow-up matting, thus tool not only can be obtained
There is the substrate etch topography of preferable depth-to-width ratio, and substrate trenched side-wall pattern can be improved
Slickness.
In actual applications, the parameter that this step is adopted can be with the first substrate etch step institute
Using parameter identical, or the it is also possible to chamber pressure of flow to oxygen and reaction chamber
Deng parameter be adjusted, for example, it is possible to make the flow of the oxygen of the second etch step with respect to
The flow of the oxygen of the first etch step reduces by 2～10sccm, for example, when the first substrate etching step
When the flow of rapid oxygen is 15sccm, the range of flow of the oxygen of the second etch step is permissible
In 5～13sccm；And/or, the chamber pressure making the second etch step is with respect to the first etching step
Rapid chamber pressure declines 5～10mT, for example, when the chamber pressure of the first etch step is 15mT
When, the chamber pressure scope of the second etch step can be in 5～10mT.Additionally, completing
It is preferable that total etching depth can be after secondary base piece etch step
It should be noted that in the present embodiment, processing gas are oxygen, but the present invention
It is not limited thereto, in actual applications, nitrogen or helium can also carried out at plasma
Passivation layer is formed during reason step on the inner surface of the groove of substrate 20.
Also, it should be noted in the present embodiment, substrate lithographic method is that substrate is etched work
Skill is divided into substrate etch step twice, that is,：First substrate etch step and the second substrate etching step
Suddenly, carry out and between a plasma treatment step.But the present invention does not limit to
In this, in actual applications, can as the case may be substrate etching technics be divided into three times or
The substrate etch step of more than three times, i.e. circulation carries out substrate etch step at least twice, and
Substrate etch step completes predetermined etching depth every time, and completes all of substrate etch step
Complete total etching depth afterwards, and, with the global cycle number of times of substrate etch step extremely
Few one cycle number of times carries out a plasma treatment step, in other words, Ke Yi for interval
Circulation carries out interspersed during multiple substrate etch step carrying out at one or many plasma
Reason step.
For example, as shown in figure 5, the substrate lithographic method that the present embodiment provides can also be by substrate
Etching technics is divided into four -idyne piece etch step, that is,：First substrate etch step is to the 4th substrate
Etch step, and between the second substrate etch step and the 3rd substrate etch step, Yi Ji
Between three substrate etch step and the 4th substrate etch step, carry out a corona treatment step
Suddenly.Specifically, comprise the following steps：
Step S10, the first substrate etch step.
Step S20, the second substrate etch step.
Step S30, plasma treatment step.
Step S40, the 3rd substrate etch step.
Step S50, plasma treatment step.
Step S60, the 4th substrate etch step.
Wherein, the concrete work of above-mentioned steps S10, step S20, step S40 and step S60
Process of making is similar with aforesaid step S1, the specific works of above-mentioned steps S30 and step S50
Process is similar with aforesaid step S2, because step S1 and step S2 there has been above
Describe in detail, will not be described here.Easy to understand, complete after completing step S60
Total etching depth, in other words, the predetermined etching depth sum that four -idyne piece etch step are completed
Can basis equal to the predetermined etching depth in total etching depth, and each substrate etch step
Concrete condition freely sets.
In sum, the above-mentioned substrate lithographic method that the present embodiment provides, its circulation carries out base
Piece etch step at least twice, and completing to carry out once after substrate etch step at least one times
Plasma treatment step, i.e. the substrate etching technics completing total etching depth is divided into repeatedly
Complete the substrate etch step of desired depth, and carry out one or many substrate etch step it
Intert afterwards and carry out a plasma treatment step, this compared with prior art not only etches step
Suddenly simple, and etching apparatus need not be made with any change, such that it is able to reduce the manufacture of equipment
Cost.
It is additionally, since and close grid bias power supply during carrying out plasma treatment step,
That is, substrate bias power is zero, and this can neutralize the Partial charge of accumulation on the mask layer side wall of substrate,
Such that it is able to avoid the occurrence of the quarter of the plasma leading to because of electric field action produced by electric charge
Erosion direction is deviateed towards trenched side-wall by original vertical direction, thus causing to go out on trenched side-wall
The problem of existing recessed etch topography, and then the slickness of substrate sidewall profile can be improved.This
Outward, the place due to, during carrying out plasma treatment step, being passed through in reaction chamber
Process gases can effectively remove a part of byproduct of reaction of the mask layer side wall being deposited in substrate,
Opening size such that it is able to prevent substrate groove to a certain extent diminishes, and then can avoid
The critical size (as groove width) substrate groove drastically contracts with the increase of etching depth
Little problem, it is hereby achieved that have the substrate etch topography of preferable depth-to-width ratio.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and
Using illustrative embodiments, but the invention is not limited in this.For in the art
For those of ordinary skill, without departing from the spirit and substance in the present invention, can do
Go out various modifications and improvement, these modifications and improvement are also considered as protection scope of the present invention.
Claims (11)
1. a kind of substrate lithographic method is it is characterised in that comprise the following steps：
Substrate etch step, is passed through etching gas to reaction chamber, and opens excitation power supply and partially
Voltage source, to etch predetermined etching depth to substrate；
Plasma treatment step, stops being passed through etching gas to reaction chamber, simultaneously to reaction
Chamber is passed through processing gas, and closes grid bias power supply, and described processing gas are deposited in for removing
A part of byproduct of reaction of substrate side wall；
Circulation carries out described substrate etch step at least twice, and carries out described substrate quarter in circulation
Intert between erosion step and carry out plasma treatment step described in one or many.
2. substrate lithographic method as claimed in claim 1 is it is characterised in that described process
Gas includes oxygen, nitrogen or noble gases.
3. substrate lithographic method as claimed in claim 1 is it is characterised in that described etc.
In gas ions process step, the range of flow of described processing gas is in 100～600sccm.
4. substrate lithographic method as claimed in claim 1 is it is characterised in that described etc.
In gas ions process step, the scope of the exciting power of excitation power supply is in 100～1000W.
5. substrate lithographic method as claimed in claim 1 is it is characterised in that described etc.
In gas ions process step, the scope of the chamber pressure of described reaction chamber is in 5～45mT.
6. substrate lithographic method as claimed in claim 1 it is characterised in that described grade from
The time of daughter process step is 5～20s.
7. the substrate lithographic method as described in claim 1-6 any one claim, its
It is characterised by, in described substrate etch step, described predetermined etching depth is more than or equal to three points
One of total etching depth and less than or equal to 2/3rds total etching depth.
8. the substrate lithographic method as described in claim 1-6 any one claim, its
It is characterised by, described etching gas include primary response gas and assisted reaction gas, wherein
Described primary response gas includes the gaseous mixture of chlorine, hydrogen bromide or chlorine and hydrogen bromide
Body；
Described assisted reaction gas includes the mixed gas of oxygen and helium, or inclusion oxygen,
Helium and the mixed gas of fluoro-gas.
9. substrate lithographic method as claimed in claim 8 is it is characterised in that in described base
In piece etch step, the range of flow of described primary response gas is in 50～350sccm；Except oxygen
Outside described assisted reaction gas range of flow in 50～150sccm；The stream of described oxygen
Amount scope is in 5～30sccm；
The scope of the exciting power of described excitation power supply is in 600～1200W；Described grid bias power supply
Substrate bias power scope in 100～300W；The scope of the chamber pressure of described reaction chamber exists
10～45mT；The scope of etch period is in 10～40s.
10. substrate lithographic method as claimed in claim 9 is it is characterised in that circulation is carried out
Described substrate etch step twice, and carries out once institute between described substrate etch step twice
State plasma treatment step；And
In the first time substrate etch step in described substrate etch step twice, described master is anti-
Answer the mixed gas that gas is chlorine and hydrogen bromide, described assisted reaction gas is oxygen and helium
Mixed gas；The flow of described chlorine is 250sccm；The flow of described hydrogen bromide is 60
sccm；The flow of described oxygen is 15sccm；The flow of described helium is 100sccm；Institute
The exciting power stating excitation power supply is 800W；The substrate bias power of described grid bias power supply is 200W；
The chamber pressure of described reaction chamber is 15mT；The scope of described etch period is in 18～25s；
The scope of described predetermined etching depth exists
In second substrate etch step in described substrate etch step twice, described master is anti-
Answer the mixed gas that gas is chlorine and hydrogen bromide, described assisted reaction gas is oxygen and helium
Mixed gas；The flow of described chlorine is 250sccm；The flow of described hydrogen bromide is 60
sccm；The flow of described oxygen is 15sccm；The flow of described helium is 100sccm；Institute
The exciting power stating excitation power supply is 800W；The substrate bias power of described grid bias power supply is 200W；
The chamber pressure of described reaction chamber is 15mT；The scope of described etch period is in 20～25s；
After completing described second substrate etch step, total etching depth is
In described plasma treatment step, described processing gas are oxygen, described oxygen
Flow is 200sccm；The exciting power of excitation power supply is 500W；The chamber of described reaction chamber
Chamber pressure is 15mT；Response time is 10s.
11. substrate lithographic methods as claimed in claim 9 are it is characterised in that circulation is carried out
Described substrate etch step twice, and carries out once institute between described substrate etch step twice
State plasma treatment step；And
In the first time substrate etch step in described substrate etch step twice, described master is anti-
Answer the mixed gas that gas is chlorine and hydrogen bromide, described assisted reaction gas is oxygen and helium
Mixed gas；The flow of described chlorine is 250sccm；The flow of described hydrogen bromide is 60
sccm；The flow of described oxygen is 15sccm；The flow of described helium is 100sccm；Institute
The exciting power stating excitation power supply is 800W；The substrate bias power of described grid bias power supply is 200W；
The chamber pressure of described reaction chamber is 15mT；The scope of described etch period is in 18～25s；
The scope of described predetermined etching depth exists
In second substrate etch step in described substrate etch step twice, described master is anti-
Answer the mixed gas that gas is chlorine and hydrogen bromide, described assisted reaction gas is oxygen and helium
Mixed gas；The flow of described chlorine is 250sccm；The flow of described hydrogen bromide is 60
sccm；The scope of the flow of described oxygen is in 5～13sccm；The flow of described helium is 100
sccm；The exciting power of described excitation power supply is 800W；The substrate bias power of described grid bias power supply
For 200W；The chamber pressure of described reaction chamber is 10mT；The scope of described etch period
In 20～25s；After completing described second substrate etch step, total etching depth is
In described plasma treatment step, described processing gas are oxygen, described oxygen
Flow is 200sccm；The exciting power of excitation power supply is 500W；The chamber of described reaction chamber
Chamber pressure is 15mT；Response time is 10s.
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| CN201310007774.2A CN103915330B (en) | 2013-01-09 | 2013-01-09 | Substrate etching method |
| TW102143434A TWI515790B (en) | 2013-01-09 | 2013-11-28 | Wafer etching method |
| PCT/CN2013/088513 WO2014108001A1 (en) | 2013-01-09 | 2013-12-04 | Substrate etching method |
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| CN105513942A (en) * | 2014-09-22 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching method |
| CN105655283A (en) * | 2014-11-13 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Isolation etching method for shallow trench with high depth-to-width ratio |
| CN106847689B (en) * | 2015-12-03 | 2020-02-11 | 北京北方华创微电子装备有限公司 | Deep silicon etching process |
| CN107785373B (en) * | 2016-08-24 | 2020-12-01 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method thereof and electronic device |
| CN110634739A (en) * | 2018-06-25 | 2019-12-31 | 北京北方华创微电子装备有限公司 | Plasma etching method for aluminum substrate |
| CN110911344B (en) * | 2018-09-14 | 2023-09-05 | 长鑫存储技术有限公司 | Manufacturing method of semiconductor substrate shallow trench and semiconductor substrate shallow trench structure |
| CN111261509B (en) * | 2018-11-30 | 2024-05-10 | 比亚迪半导体股份有限公司 | Method for etching grooves in silicon substrate and its application |
| CN112713085A (en) * | 2019-10-25 | 2021-04-27 | 上海新微技术研发中心有限公司 | Method for processing semiconductor substrate |
| CN111463128A (en) * | 2020-04-14 | 2020-07-28 | Tcl华星光电技术有限公司 | Dry etching method and polycrystalline silicon thin film transistor |
| CN111968912B (en) * | 2020-08-24 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Polyimide etching method |
| CN115637432B (en) * | 2022-09-30 | 2023-08-22 | 东莞赛诺高德蚀刻科技有限公司 | Manufacturing method of workpiece with holes and high-aspect-ratio grooves and metal workpiece |
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| CN101962773A (en) * | 2009-07-24 | 2011-02-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching method |
| CN102044429A (en) * | 2009-10-23 | 2011-05-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for etching silicon wafer |
| CN102456545A (en) * | 2010-10-21 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching method of patterned substrate |
| CN102651336A (en) * | 2011-02-28 | 2012-08-29 | 东京毅力科创株式会社 | Plasma etching method and semiconductor device manufacturing method |
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| CN101962773A (en) * | 2009-07-24 | 2011-02-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching method |
| CN102044429A (en) * | 2009-10-23 | 2011-05-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for etching silicon wafer |
| CN102456545A (en) * | 2010-10-21 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching method of patterned substrate |
| CN102651336A (en) * | 2011-02-28 | 2012-08-29 | 东京毅力科创株式会社 | Plasma etching method and semiconductor device manufacturing method |
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| CN103915330A (en) | 2014-07-09 |
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