CN103887316A - Image sensor - Google Patents
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- CN103887316A CN103887316A CN201210563978.XA CN201210563978A CN103887316A CN 103887316 A CN103887316 A CN 103887316A CN 201210563978 A CN201210563978 A CN 201210563978A CN 103887316 A CN103887316 A CN 103887316A
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Abstract
The invention discloses an image sensor, comprising: the optical sensor array comprises a substrate and an optical sensor array positioned on the substrate; the optical sensor array comprises a plurality of scanning lines, a plurality of data lines which are insulated and crossed with the plurality of scanning lines, and optical sensors and switch units which are arranged in pixel areas defined by adjacent scanning lines and adjacent data lines; the optical sensor array further comprises an optical adjusting layer arranged on the optical sensor, and the photoelectric conversion efficiency of the optical sensor is adjusted. The invention improves the prior image sensor and realizes the adjustability of photoelectric conversion efficiency.
Description
Technical field
The present invention relates to a kind of device for photoelectric conversion, relate in particular to a kind of imageing sensor.
Background technology
Photodiode is a kind of light signal-photon (Photon) that absorbs, and converts thereof into the element of the signal of telecommunication-electric current, and English is commonly referred to Photo-Diode(PD).As shown in Figure 1, PIN junction diode is the most frequently used a kind of silicon photoelectric diode, because it is by three layers, p-type silicon layer (P layer) 101, intrinsic (intrinsic) silicon layer (I layer) 102 and 103 of N-shaped silicon layers (N layer) form, and are therefore called the silicon photoelectric diode of PIN knot.PIN junction diode, from ultraviolet near infrared region spectral region, all has fast response time, low-dark current and highly sensitive feature.Can be used on the field such as photodetector and optical communication.
One of photodiode is important for being exactly to form array, for image sensing.Present image transducer is widely used, and for example, imageing sensor is applied to close contact imageing sensor or radioscopic image sensing device etc.Imageing sensor has thin-film transistor (Thin Film Transistor, TFT) array substrate, and this tft array substrate arrangement has pair light to carry out photodiode and the TFT of opto-electronic conversion.
But conventionally there is following various problems in the conventional images transducer with PIN p n junction photodiode:
(1) photoelectric efficiency of imageing sensor is mainly determined by the thickness of the p-type silicon layer of PIN junction diode, regulate photoelectric efficiency can only regulate the thickness of this layer, but the thickness that regulates p-type silicon layer can affect the etching technics of PIN junction diode, affects other performances such as dark current;
(2) if multiple image sensor products mixing on same substrate, the electricity conversion of each imageing sensor of making is the same, can not realize according to the electricity conversion of the each imageing sensor of different product requirement flexible;
(3) due to the high resistivity of P doped amorphous silicon, the speed that the photoproduction signal of telecommunication of the neighboring area of PIN junction diode is read out is very slow, has increased imaging signal residual.
Summary of the invention
The technical issues that need to address of the present invention are by the improved imageing sensor of one, solve one or more in above-mentioned problem.
For achieving the above object, the present invention is achieved through the following technical solutions:
A kind of imageing sensor, comprising:
Substrate;
Top electrode layer;
Photoelectric diode structure layer, is arranged between described substrate and described top electrode layer
Bottom electrode layer, is arranged between described substrate and described photoelectric diode structure layer; And
Regulating course, is formed on described top electrode layer, and wherein this regulating course absorbs the light of incident, thereby regulates the photoelectric conversion efficiency of described imageing sensor.
Further, this regulating course covers whole photoelectric diode structure layer regions.
Further, this regulating course covers the neighboring area of photoelectric diode structure layer region.
Further, this regulating course is made up of at least one in following material: n doped amorphous silicon, p doped amorphous silicon, Mo, Al, silicon nitride, organic film.
Further, this imageing sensor also comprises light shield layer, and this light shield layer and this regulating course are integrated together.
Further, this top electrode layer is the transparent electrode layer of being made up of ITO; And hearth electrode is made of metal.
Further, described imageing sensor is further included in the common electrode layer on top electrode layer, and this common electrode layer is lighttight metal level.
Further, this regulating course and this common electrode layer are integrated together.
Further, described photoelectric diode structure layer is PIN knot or PN junction.
Further, described imageing sensor is radioscopic image transducer.
Correspondingly, the invention allows for so a kind of imageing sensor, it comprises:
Substrate and be positioned at the photosensor array on described substrate;
Described photosensor array comprises multi-strip scanning line, with described multi-strip scanning line many data wires that intersect that insulate, is arranged at optical sensor and the switch element of the pixel region that adjacent scanning lines and adjacent data line surround;
Described photosensor array also comprises the light regulating course being arranged on described optical sensor, regulates the photoelectric conversion efficiency of described optical sensor.
Further, described imageing sensor is radioscopic image transducer.
Further, described switch element is thin-film transistor, and described optical sensor is photodiode.
Further, the grid of described thin-film transistor is electrically connected with described scan line, and the source/drain of described thin-film transistor is electrically connected with described data wire, and the drain/source of described thin-film transistor is electrically connected with described photoelectric diode.
Further, state photodiode and in the direction away from described substrate, comprise successively hearth electrode, photoelectric diode structure layer, top electrode; The drain/source of described thin-film transistor is electrically connected with the hearth electrode of described photoelectric diode.
Further, described thin-film transistor comprises grid, gate insulator, active layer, source electrode and the drain electrode, the passivation layer that are positioned at successively on described substrate.
Further, the grid of described thin-film transistor and described scan line are positioned at same layer; The hearth electrode of the source electrode of described thin-film transistor and drain electrode, described data wire and described photodiode is positioned at same layer; The hearth electrode of described photodiode is connected with described photoelectric diode structure layer by the via hole that runs through described passivation layer.
Further, described photoelectric diode structure layer is PIN knot or PN junction.
Further, described photosensor array also comprises the dielectric layer that covers described scan line, data wire, thin-film transistor and photodiode; Described dielectric layer has the via hole that exposes described photodiode top electrode; Described photosensor array also comprises the common electrode layer that covers described dielectric layer and be connected with described photodiode top electrode by described via hole.
Further, described common electrode layer adopts light-proof material, and described imageing sensor also comprises the light shield layer that is positioned at same layer with described common electrode layer and hides the raceway groove of described thin-film transistor; Described smooth regulating course and described common electrode layer are positioned at same layer and cover the neighboring area of described photodiode.
Further, described common electrode layer adopts light transmissive material, and described imageing sensor also comprises the light shield layer that is positioned in described common electrode layer and hides the raceway groove of described thin-film transistor; Described smooth regulating course and described light shield layer are positioned at same layer and cover the neighboring area of described photodiode.
Further, to hide the area of the neighboring area of described photodiode be whole photodiode area to described smooth regulating course 5% to 20%.
Further, described common electrode layer adopts light transmissive material, and described imageing sensor also comprises the light shield layer that is positioned in described common electrode layer and hides the raceway groove of described thin-film transistor; Described smooth regulating course is positioned in described common electrode layer and covers whole described photodiode.
Further, the material of described light shield layer can be n+a-Si, a-Si, p+a-Si, SiNx, organic film one of them or its combination.
The imageing sensor that the present invention proposes has following features:
(1) by increasing the light absorbing regulating course of one deck, realized the controllability of electricity conversion;
(2) described regulating course, only when the incident light of shading light electric diode neighboring area, can also be reduced to image signal residual;
(3) owing to having increased regulating course, so for the different images product sensor of mixing on same substrate, can realize different product and have different electricity conversions;
(4) processing step that increases regulating course, after common electrode layer, does not affect existing TFT and diode technique, and difficulty and risk are all smaller.
Accompanying drawing explanation
Fig. 1 is the structural representation of PIN junction diode of the prior art;
Fig. 2 is according to the structural representation of the imageing sensor of the first embodiment of the present invention;
Fig. 3 is according to this plan view of three layers of the regulating course of the imageing sensor of first embodiment of the invention, common electrode layer and photoelectric diode structure layer;
Fig. 4 is the structural representation of imageing sensor according to a second embodiment of the present invention;
Fig. 5 is according to this plan view of three layers of the regulating course of the imageing sensor of second embodiment of the invention, common electrode layer and photoelectric diode structure layer;
Fig. 6 is the structural representation of the imageing sensor of a third embodiment in accordance with the invention;
Fig. 7 is that the image sensor architecture of Fig. 6 is along the generalized section of A-A ' line;
Fig. 8 is according to the structural representation of the imageing sensor of fourth embodiment of the invention;
Fig. 9 is that the image sensor architecture of Fig. 8 is along a kind of generalized section of A-A ' line;
Figure 10 is that the image sensor architecture of Fig. 8 is along the another kind of generalized section of A-A ' line;
Figure 11 is the manufacturing flow chart of the imageing sensor of a third embodiment in accordance with the invention.
The technical characterictic that Reference numeral in figure refers to is respectively:
101, p-type silicon layer; 102, intrinsic silicon layer; 103, N-shaped silicon layer; 105, light;
200, imageing sensor; 201, substrate; 202, bottom electrode layer; 209, photodiode; 203, the 3rd sublayer of photodiode; 204, the second sublayer of photodiode; 205, the first sublayer of photodiode; 206, transparent electrode layer (top electrode layer); 207, common electrode layer; 208, regulating course;
400, imageing sensor; 401, substrate; 402, bottom electrode layer; 409, photodiode; 403, the 3rd sublayer of photodiode; 404, the second sublayer of photodiode; 405, the first sublayer of photodiode; 406, transparent electrode layer (top electrode layer); 407, common electrode layer; 408, regulating course;
600, imageing sensor; 601, scan line; 602, data wire; 603, pixel region; 604, optical sensor; 605, switch element; 606, light regulating course; 609, substrate;
701, silicon nitride protective layer; 702, light shield layer; 703, dielectric layer; 704, passivation layer; 706, source electrode and drain electrode; 707, active layer; 708, grid; 710, gate insulator; 711, hearth electrode; 712, diode structure layer; 713, p-type amorphous silicon conductive layer; 714, top electrode; 715, common electrode layer; 741, via hole; 742, via hole;
800, imageing sensor; 801, scan line; 802, data wire; 803, pixel region; 804, optical sensor; 805, switch element; 806, light regulating course; 809, substrate;
901, silicon nitride protective layer; 902, light shield layer; 903, dielectric layer; 904, passivation layer; 906, source electrode and drain electrode; 907, active layer; 908, grid; 910, gate insulator; 911, hearth electrode; 912, diode structure layer; 913, p-type amorphous silicon conductive layer; 914, top electrode; 915, common electrode layer; 941, via hole; 942, via hole;
1001, silicon nitride protective layer; 1002, light shield layer; 1003, dielectric layer; 1004, passivation layer; 1006, source electrode and drain electrode; 1007, active layer; 1008, grid; 1010, gate insulator; 1011, hearth electrode; 1012, diode structure layer; 1013, p-type amorphous silicon conductive layer; 1014, top electrode; 1015, common electrode layer; 1041, via hole; 1042, via hole.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, in accompanying drawing, only show part related to the present invention but not entire infrastructure.
Fig. 2-3 show the first embodiment of the present invention.
Fig. 2 is according to the structural representation of the imageing sensor 200 of the first embodiment of the present invention, as shown in Figure 2, the imageing sensor 200 described in the present embodiment comprises: substrate 201, top electrode layer 206, common electrode layer 207, photoelectric diode structure layer 209, bottom electrode layer 202 and regulating course 208.Wherein, described photoelectric diode structure layer 209 is arranged between substrate 201 and top electrode layer 206, described bottom electrode layer 202 is arranged between substrate 201 and photoelectric diode structure layer 209, and described regulating course 208 is formed on described common electrode layer 207, this regulating course 208 absorbs the light of incident, thereby regulates the photoelectric conversion efficiency of described imageing sensor 200.The difference such as thickness, material of regulating course 208, the photoelectric conversion efficiency of imageing sensor 200 that comprises so this regulating course 208 is also different.
As shown in Figure 2, described top electrode layer 206 is transparent electrode layers.In the present embodiment, described transparent electrode layer can be by transparent conductive material indium tin oxide (indium tin oxide, ITO) form, and in other embodiments, described transparent electrode layer can also replace to IZO transparent electrode layer, described IZO transparent electrode layer is made up of transparent conductive material indium-zinc oxide (indium zinc oxide, IZO).
According to the first embodiment of the present invention, refer again to Fig. 2, photoelectric diode structure layer 209 can be the PIN knot of sandwich construction, and it comprises having the first sublayer 205, second sublayer 204 being made up of intrinsic material of the first conductivity type and have in contrast to the 3rd sublayer 203 of the second conductivity type of the first conductivity type.In the present embodiment, the first sublayer 205, the second sublayer 204 and the 3rd sublayer 203 are preferably made up of amorphous silicon, and the first conductivity type is p-type, and the second conductivity type is N-shaped.In other embodiments, the first sublayer 205 and the 3rd sublayer 203 can also be made up of microcrystal silicon, SiGe, cadmium telluride, cadmium selenide, cadmium sulfide, Cu-In selenide, Copper Indium Gallium Selenide compound or dye sensitization titanium dioxide.
With reference to Fig. 2, the first sublayer 205 is adjacent to transparent electrode layer 206.The second sublayer 204 is arranged between the first sublayer 205 and bottom electrode layer 202.The 3rd sublayer 203 is arranged between the second sublayer 204 and bottom electrode layer 202.Conventionally, between the 3rd sublayer 203 of described photoelectric diode structure layer 209 and bottom electrode layer 202, be also provided with insulating barrier (not shown), the two can be electrically connected to by running through the via hole (not shown) of this insulating barrier the bottom electrode layer 202 of below.
In the present embodiment, bottom electrode layer 202 is made up of metal for example gold, silver, copper, aluminium or its alloy, or is made up of other known metal material.As is known to the person skilled in the art, bottom electrode layer 202 also can be made up of metal and the metal barrier material that covers this metal, and wherein metal barrier material comprises titanium or tantalum.
According to the first embodiment of the present invention, on described common electrode layer 207, also has regulating course 208.The effect of described regulating course 208 is that the light to inciding on it absorbs, thereby regulates the amount of the light that enters described photoelectric diode structure layer 209.In the present embodiment, regulating course 208 can be made up of at least one in following material: n doped amorphous silicon, p doped amorphous silicon, Mo, Al, silicon nitride, organic film.And the thickness of described regulating course 208 can be determined according to required photoelectric conversion efficiency.
Fig. 3 is according to this plan view of three layers of the regulating course of the imageing sensor of first embodiment of the invention, common electrode layer and photoelectric diode structure layer.In the present embodiment, on the basis of Fig. 2 with further reference to Fig. 3, described regulating course 208 extends on described common electrode layer 207, whole photoelectric diode structure layers 209 region are covered, at this moment, this regulating course 208 can use identical mask plate preparation with this photoelectric diode structure layer 209, can not increase the cost of mask plate.
In a preferred implementation of the present embodiment, described imageing sensor is radioscopic image transducer.
In other embodiments, described photoelectric diode structure layer 209 also can be replaced by such photoelectric conversion layer, this photoelectric conversion layer has two sublayers, one of them sublayer is adjacent to transparent electrode layer 206 and is n or p-type, another sublayer is close to bottom electrode layer 202 and is made up of semi-conducting material, and described photoelectric diode structure layer is PN junction.
Fig. 4-5 show the second embodiment of the present invention.
Fig. 4 is the structural representation of imageing sensor 400 according to a second embodiment of the present invention, as shown in Figure 4, the imageing sensor 400 described in the present embodiment comprises: substrate 401, top electrode layer 406, common electrode layer 407, photoelectric diode structure layer 409, bottom electrode layer 402 and regulating course 408.Wherein, described photoelectric diode structure layer 409 is arranged between substrate 401 and top electrode layer 406, described bottom electrode layer 402 is arranged between substrate 401 and photoelectric diode structure layer 409, and described regulating course 408 is formed on described common electrode layer 407, this regulating course 408 absorbs the light of incident, thereby regulates the photoelectric conversion efficiency of described imageing sensor 200.
In a second embodiment, described top electrode layer 407 is transparent electrode layers, described transparent electrode layer can be made up of transparent conductive material indium tin oxide (indium tin oxide, ITO) or transparent conductive material indium-zinc oxide (indium zinc oxide, IZO).
In a second embodiment, the substrate 401 of above-mentioned imageing sensor 400, top electrode layer 406, common electrode layer 407, photoelectric diode structure layer 409, bottom electrode layer 402 are identical with the corresponding all parts in the first embodiment.
Fig. 5 is according to this plan view of three layers of the regulating course of the imageing sensor of second embodiment of the invention, common electrode layer and photoelectric diode structure layer.As can be seen from Figure 5, different from the first embodiment, the shape of described regulating course 408 is in a second embodiment annular, and this annular regulating course 408 only covers the neighboring area in photoelectric diode structure layer 409 region.
Preferably, in the situation that imageing sensor also comprises light shield layer (not shown), can be integrated together and (that is to say with described light shield layer according to the regulating course 408 of second embodiment of the invention, described regulating course and described light shield layer belong to same layer, and made by identical material, thereby can reduce processing step); Further, if described common electrode layer 407 is lighttight metal levels, described regulating course 408 can also be integrated together with described common electrode layer 407 (now described common electrode layer 407 can integrate with described light shield layer simultaneously, also can be positioned at different layers).The benefit of integrated like this setting is to increase cost, and also needn't increase processing step.
Fig. 6 and Fig. 7 show the third embodiment of the present invention.
Fig. 6 is according to the structural representation of a kind of imageing sensor 600 of third embodiment of the invention.As shown in Figure 6, the imageing sensor 600 described in the present embodiment comprises: substrate 609, be positioned at the photosensor array on described substrate 609.Wherein, described photosensor array further comprises: multi-strip scanning line 601; With described multi-strip scanning line many data wires 602 that intersect that insulate; Be arranged at optical sensor 604 and the switch element 605 of the pixel region 603 that adjacent scanning lines and adjacent data line surround.Described photosensor array also comprises the light regulating course 606 being arranged on described optical sensor 604, to regulate the photoelectric conversion efficiency of described optical sensor 604.It should be noted that, photosensor array shown in Fig. 6 is only a kind of typical structure, for a person skilled in the art, photosensor array also has many other designs, share two scan lines as a line optical sensor, the optical sensor of adjacent column shares a data wire, is all applicable to the present invention.
Fig. 7 is that the image sensor architecture of Fig. 6 is along the generalized section of A-A ' line.To on the basis of Fig. 6, further referring to Fig. 7, imageing sensor be described below.In a preferred implementation of the present embodiment, described optical sensor 604 is photodiode, described photodiode 604 comprises successively hearth electrode 711, diode structure layer 712, top electrode 714 in the direction away from described substrate 609, and wherein said diode structure layer 712 can be PIN knot or the such structure of PN junction.
In a preferred implementation of the present embodiment, described switch element 605 is thin-film transistor, and described thin-film transistor comprises grid 708, gate insulator 710, active layer 707, source electrode and the drain electrode 706, the passivation layer 704 that are positioned at successively on described substrate 609.Conventionally, the grid 708 of described thin-film transistor is electrically connected with described scan line 601, one in the source electrode of described thin-film transistor and drain electrode is electrically connected with described data wire 602, the source electrode of described thin-film transistor and drain in another be electrically connected with the described photoelectric diode hearth electrode 711 of described photoelectric diode (particularly with).Further preferred, grid 708 and the described scan line 601 of described thin-film transistor are positioned at same layer; The hearth electrode 711 of the source electrode of described thin-film transistor and drain electrode 706, described data wire 602 and described photodiode is positioned at same layer, and the hearth electrode 711 of wherein said photodiode can be connected with described data wire 602 by the via hole 741 that runs through described passivation layer 704.It should be noted that, the thin-film transistor shown in Fig. 7 is bottom gate thin film transistor, is a kind of common structure well known in the art, but for a person skilled in the art, thin-film transistor also has many other designs, as top gate type thin film transistor etc., is all applicable to the present invention.
In a preferred implementation of the present embodiment, described photosensor array also comprises the dielectric layer (being dielectric layer 703 in Fig. 7) that covers described scan line 601, data wire 602, thin-film transistor 605 and photodiode 604; Described dielectric layer 703 has the via hole 742 of the top electrode 714 that exposes described photodiode 604; Described photosensor array also comprises the common electrode layer 715 that covers described dielectric layer 703 and be connected with described photodiode top electrode 714 by described via hole 742.At this, described common electrode layer 715 can adopt light transmissive material to make.
As shown in Figure 7, for example, in the situation that described common electrode layer 715 adopts light transmissive material (tin indium oxide material) to make, described imageing sensor can also comprise the light shield layer 702 that is positioned in described common electrode layer 715 and hides the raceway groove of described thin-film transistor, described smooth regulating course 606 is positioned in described common electrode layer 715 and covers whole described photodiode, at this moment, although described light shield layer 702 and light regulating course 606 are all positioned in common electrode layer 715, but the two has adopted different materials, in different processing steps, form.
Fig. 8 and Fig. 9 show the fourth embodiment of the present invention.
Fig. 8 is according to the structural representation of a kind of imageing sensor 800 of fourth embodiment of the invention, and the image sensor architecture that Fig. 9 is Fig. 8 is along a kind of generalized section of A-A ' line.As shown in Figure 8 and Figure 9, the 4th embodiment and the 3rd embodiment something in common no longer repeat, distinguish part and be, light regulating course 806 described in the 4th embodiment is positioned at same layer, adopts same material with described light shield layer 902, and covers the neighboring area of described photodiode.
Specifically, for example, in the situation that described common electrode layer 915 adopts light transmissive material (tin indium oxide material) to make, described imageing sensor 800 can also comprise the light shield layer 902 that is positioned in described common electrode layer 915 and hides the raceway groove of described thin-film transistor.(at this moment described smooth regulating course 806 is positioned at same layer with described light shield layer 902, described light shield layer 902 and light regulating course 806 are all positioned at same layer and have adopted same material, formed by same processing step) and cover the neighboring area of described photodiode, the area that wherein said smooth regulating course 806 hides described photodiode neighboring area can reach 5% to 20% of whole photodiode area.
Fig. 8 and Figure 10 show the fifth embodiment of the present invention.
Figure 10 is that the image sensor architecture of Fig. 8 is along the another kind of generalized section of A-A ' line.As shown in Fig. 8 and Figure 10, the 5th embodiment and the 3rd embodiment something in common no longer repeat, and distinguish part and are, described in the 5th embodiment, common electrode layer 1015 adopts light-proof material; Described smooth regulating course 806 is positioned at same layer with described common electrode layer 1015, adopts same material, and covers the neighboring area of described photodiode.
Specifically, adopt light-proof material (for example in described common electrode layer 1015, the metal material such as Mo, Al) in situation about making, described imageing sensor 800 can also comprise the light shield layer 1002 that is positioned at same layer with described common electrode layer 1015 and hides the raceway groove of described thin-film transistor; Described smooth regulating course 806 can be positioned at same layer with described common electrode layer 1015 and cover the neighboring area of described photodiode, and the area that wherein said smooth regulating course 806 hides described photodiode neighboring area can reach 5% to 20% of whole photodiode area.In these cases, common electrode layer 1015, light shield layer 1002 and light regulating course 806 are all positioned at same layer, and have adopted same material, formed by same processing step.
In a preferred implementation of the present embodiment, described imageing sensor can be radioscopic image transducer; The material of described light shield layer can be n+a-Si, a-Si, p+a-Si, SiNx, organic film one of them or its combination.
Figure 11 shows the manufacture process of the imageing sensor of a third embodiment in accordance with the invention.Referring to Fig. 6-7, the manufacture method of above-mentioned imageing sensor 600 comprises the following steps:
The first step: provide substrate, as shown in the step 1101 in Figure 11.
This substrate comprises substrate 609, be positioned at scan line 601, the data wire 602 that the insulation on this substrate intersects, the TFT 605 that is arranged at this scan line 601 and data wire 602 infalls; The grid of this TFT 605 is electrically connected with this scan line 601, in the source/drain of this TFT 605 one is electrically connected with this data wire 602; This substrate also comprises another the insulating barrier in the drain/source that covers this TFT 605, and exposing another the via hole in the drain/source of this TFT605, this via hole is electrically connected with the bottom electrode layer 711 of described photoelectric diode for another of the drain/source of this TFT 605.Described substrate 609 can be made up of glass or quartz.
Second step: form bottom electrode layer, photoelectric diode structure layer and top electrode layer on substrate, as shown in the step 1102 in Figure 11.
A third embodiment in accordance with the invention, the bottom electrode layer 711 forming can be made up of metal material, and the top electrode layer 714 forming is transparent electrode layers.Described transparent electrode layer 714 can be made up of transparent conductive material indium tin oxide; And in other embodiments, transparent electrode layer 714 can also replace to IZO transparent electrode layer, IZO transparent electrode layer is made up of transparent conductive material indium-zinc oxide.
A third embodiment in accordance with the invention, the photoelectric diode structure layer forming is sandwich construction, becomes example and referring to Fig. 2, the formation method of described photoelectric diode structure layer is for example with PIN:
First be the 3rd sublayer 203 that forms the second conductivity type.
Then on the 3rd sublayer 203, adopt for example vapor phase epitaxial growth method to form the second sublayer 204 being formed by intrinsic material.
Form and have in contrast to the first sublayer 205 of the first conductivity type of the second conductivity type afterwards.
In the present embodiment, the first sublayer 205, the second sublayer 204 and the 3rd sublayer 203 are preferably made up of amorphous silicon, and the first conductivity type is p-type, and the second conductivity type is N-shaped.In other embodiments, the first sublayer 205 and the 3rd sublayer 203 can also be made up of microcrystal silicon, SiGe, cadmium telluride, cadmium selenide, cadmium sulfide, Cu-In selenide, Copper Indium Gallium Selenide compound or dye sensitization titanium dioxide.
Referring to Fig. 2, the first sublayer 205 forming will be adjacent to top electrode layer.The second sublayer 204 forming is between the first sublayer 205 and bottom electrode layer.And the 3rd sublayer 203 forming is between the second sublayer 204 and bottom electrode layer.
Preferably, bottom electrode layer, photoelectric diode structure layer and top electrode layer share a mask plate, in same etching technics step, form.
The 3rd step: form dielectric layer, as shown in the step 1103 in Figure 11.
Described dielectric layer 703 can be made up of silicon nitride, and the dielectric layer 703 forming will cover whole substrate scope, fills between photoelectric diode structure layer and covers photoelectric diode structure layer and top electrode layer 714.Meanwhile, described dielectric layer 703 has via hole 742 to expose top electrode layer 714 above top electrode layer 714.
The 4th step: form common electrode layer on dielectric layer, as shown in the step 1104 in Figure 11.
On described dielectric layer 703, deposits conductive material forms common electrode layer 715.Described common electrode layer 715 can be connected with the top electrode 714 of described photodiode by described via hole 742.
The 5th step: cover regulating course in this common electrode layer, as shown in the step 1105 in Figure 11.
The regulating course 606 covering absorbs for the light to incident, to regulate the photoelectric conversion efficiency of described imageing sensor.In the present embodiment, the regulating course 606 forming can be made up of at least one in following material: n doped amorphous silicon, p doped amorphous silicon, Mo, Al, silicon nitride, organic film.Described regulating course 606 can absorb the light inciding on it, thereby regulates the amount of the light that enters described photodiode.And the thickness of described regulating course 606 can be determined according to required photoelectric conversion efficiency.
According to the 3rd embodiment, on the basis of Fig. 6, with further reference to Fig. 7, the regulating course 606 forming extends on described common electrode layer 715, has covered the region of whole photoelectric diode structure layers.At this moment, this regulating course 606 can share same mask plate with this photoelectric diode structure layer and is prepared.Like this, the preparation of this regulating course 606 does not need new mask plate, thereby needn't improve because of increasing regulating course the manufacturing cost of mask plate.Now, regulating course can adopt following material: n doped amorphous silicon, p doped amorphous silicon, Mo, Al, silicon nitride, organic film etc.
Certainly,, if regulating course is the engraved structure of the covering photoelectric diode structure layer neighboring area shown in Fig. 8, can there be so two kinds of different versions:
The first (imageing sensor that corresponding preparation the 4th embodiment provides) is exactly, and in step 5, prepares light shield layer 702 and regulating course 606 in common electrode layer 715 simultaneously, and this regulating course 606 can adopt lighttight metal material.The preparation of the preparation of regulating course 606 and light shield layer 702 shares same mask plate like this, does not increase the preparation cost of mask plate.
The second (imageing sensor that corresponding preparation the 5th embodiment provides) is exactly, on the basis of above-mentioned manufacture process, omit step 5, and as long as common electrode layer 715 is prepared into the engraved structure of the covering photoelectric diode structure layer neighboring area shown in Fig. 8 in step 4.Now public electrode adopts metal material.Preferably, the light shield layer 702 that hides TFT raceway groove also can be prepared together with this common electrode layer 715, that is to say, prepares common electrode layer 715, light shield layer 702 and regulating course 606 in step 4 simultaneously.The preparation of the preparation of regulating course 606 and light shield layer 702 shares same mask plate like this, does not increase the preparation cost of mask plate.
So far, completed the manufacture of imageing sensor according to an embodiment of the invention.
Compared with the imageing sensor of prior art, the imageing sensor that the present invention proposes: on common electrode layer, increase the light absorbing regulating course of one deck, thereby realized the controllability of electricity conversion; And, in the time that described regulating course has only blocked the incident light of photodiode neighboring area, can also be reduced to image signal residual; And for the different images product sensor of mixing in same mask, can realize different product and have different electricity conversions; In addition, the processing step of the increase regulating course of the imageing sensor that the present invention proposes, after common electrode layer, does not affect existing TFT and diode technique, and therefore difficulty and risk are all smaller.
Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious variations, readjust and substitute and can not depart from protection scope of the present invention.Therefore, although the present invention is described in further detail by above embodiment, the present invention is not limited only to above embodiment, in the situation that not departing from the present invention's design, can also comprise more other equivalent embodiment, and scope of the present invention is determined by appended claim scope.
Claims (24)
1. an imageing sensor, comprising:
Substrate;
Top electrode layer;
Photoelectric diode structure layer, is arranged between described substrate and described top electrode layer
Bottom electrode layer, is arranged between described substrate and described photoelectric diode structure layer; And
Regulating course, is formed on described top electrode layer, and wherein this regulating course absorbs the light of incident, thereby regulates the photoelectric conversion efficiency of described imageing sensor.
2. imageing sensor according to claim 1, is characterized in that, this regulating course covers whole photoelectric diode structure layer regions.
3. imageing sensor according to claim 1, is characterized in that, this regulating course covers the neighboring area of photoelectric diode structure layer region.
4. imageing sensor according to claim 1, is characterized in that, this regulating course is made up of at least one in following material: n doped amorphous silicon, p doped amorphous silicon, Mo, Al, silicon nitride, organic film.
5. imageing sensor according to claim 3, is characterized in that, this imageing sensor also comprises light shield layer, and this light shield layer and this regulating course are integrated together.
6. imageing sensor according to claim 1, is characterized in that, this top electrode layer is the transparent electrode layer of being made up of ITO; And hearth electrode is made of metal.
7. imageing sensor according to claim 6, is characterized in that, described imageing sensor is further included in the common electrode layer on top electrode layer, and this common electrode layer is lighttight metal level.
8. imageing sensor according to claim 7, is characterized in that, this regulating course and this common electrode layer are integrated together.
9. imageing sensor according to claim 1, is characterized in that, described photoelectric diode structure layer is PIN knot or PN junction.
10. imageing sensor according to claim 1, is characterized in that, described imageing sensor is radioscopic image transducer.
11. 1 kinds of imageing sensors, comprising:
Substrate and be positioned at the photosensor array on described substrate;
Described photosensor array comprises multi-strip scanning line, with described multi-strip scanning line many data wires that intersect that insulate, is arranged at optical sensor and the switch element of the pixel region that adjacent scanning lines and adjacent data line surround;
Described photosensor array also comprises the light regulating course being arranged on described optical sensor, regulates the photoelectric conversion efficiency of described optical sensor.
12. imageing sensors according to claim 11, is characterized in that, described imageing sensor is radioscopic image transducer.
13. imageing sensors according to claim 11, is characterized in that, described switch element is thin-film transistor, and described optical sensor is photodiode.
14. imageing sensors according to claim 13, it is characterized in that, the grid of described thin-film transistor is electrically connected with described scan line, and the source/drain of described thin-film transistor is electrically connected with described data wire, and the drain/source of described thin-film transistor is electrically connected with described photoelectric diode.
15. imageing sensors according to claim 14, is characterized in that, described photodiode comprises successively hearth electrode, photoelectric diode structure layer, top electrode in the direction away from described substrate; The drain/source of described thin-film transistor is electrically connected with the hearth electrode of described photoelectric diode.
16. imageing sensors according to claim 15, is characterized in that, described thin-film transistor comprises grid, gate insulator, active layer, source electrode and the drain electrode, the passivation layer that are positioned at successively on described substrate.
17. imageing sensors according to claim 16, is characterized in that, the grid of described thin-film transistor and described scan line are positioned at same layer; The hearth electrode of the source electrode of described thin-film transistor and drain electrode, described data wire and described photodiode is positioned at same layer; The hearth electrode of described photodiode is connected with described photoelectric diode structure layer by the via hole that runs through described passivation layer.
18. imageing sensors according to claim 15, is characterized in that, described photoelectric diode structure layer is PIN knot or PN junction.
19. imageing sensors according to claim 15, is characterized in that, described photosensor array also comprises the dielectric layer that covers described scan line, data wire, thin-film transistor and photodiode; Described dielectric layer has the via hole that exposes described photodiode top electrode; Described photosensor array also comprises the common electrode layer that covers described dielectric layer and be connected with described photodiode top electrode by described via hole.
20. imageing sensors according to claim 19, is characterized in that, described common electrode layer adopts light-proof material, and described imageing sensor also comprises the light shield layer that is positioned at same layer with described common electrode layer and hides the raceway groove of described thin-film transistor; Described smooth regulating course and described common electrode layer are positioned at same layer and cover the neighboring area of described photodiode.
21. imageing sensors according to claim 19, is characterized in that, described common electrode layer adopts light transmissive material, and described imageing sensor also comprises the light shield layer that is positioned in described common electrode layer and hides the raceway groove of described thin-film transistor; Described smooth regulating course and described light shield layer are positioned at same layer and cover the neighboring area of described photodiode.
22. according to the imageing sensor described in claim 20 or 21, it is characterized in that, it is whole photodiode area 5% to 20% that described smooth regulating course hides the area of the neighboring area of described photodiode.
23. imageing sensors according to claim 19, is characterized in that, described common electrode layer adopts light transmissive material, and described imageing sensor also comprises the light shield layer that is positioned in described common electrode layer and hides the raceway groove of described thin-film transistor; Described smooth regulating course is positioned in described common electrode layer and covers whole described photodiode.
24. imageing sensors according to claim 11, is characterized in that, the material of described light shield layer can be n+ a-Si, a-Si, p+a-Si, SiNx, organic film one of them or its combination.
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