[go: up one dir, main page]

CN103885282A - Verification method for reducing false reporting after OPC (Optical Proximity Correction) - Google Patents

Verification method for reducing false reporting after OPC (Optical Proximity Correction) Download PDF

Info

Publication number
CN103885282A
CN103885282A CN201410106502.2A CN201410106502A CN103885282A CN 103885282 A CN103885282 A CN 103885282A CN 201410106502 A CN201410106502 A CN 201410106502A CN 103885282 A CN103885282 A CN 103885282A
Authority
CN
China
Prior art keywords
opc
wrong
revises
wrong report
verify
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410106502.2A
Other languages
Chinese (zh)
Other versions
CN103885282B (en
Inventor
何大权
张辰明
魏芳
张旭昇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huali Microelectronics Corp
Original Assignee
Shanghai Huali Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huali Microelectronics Corp filed Critical Shanghai Huali Microelectronics Corp
Priority to CN201410106502.2A priority Critical patent/CN103885282B/en
Publication of CN103885282A publication Critical patent/CN103885282A/en
Application granted granted Critical
Publication of CN103885282B publication Critical patent/CN103885282B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The invention discloses a verification method for reducing false reporting after OPC (Optical Proximity Correction). The method comprises the following steps: step 1, finishing OPC, and after the OPC is finished, generating a pattern after the OPC and a target pattern before the OPC; step 2, after the OPC is finished, selecting a pattern region which causes false reporting in OPC verification; step 3, intercepting a pattern edge segment in the pattern region causing false reporting; step 4, forming an independent OPC verification region along the pattern edge segment; and step 5, carrying out OPC verification. With the adoption of the verification method for reducing the false reporting after the OPC disclosed by the invention, false reporting in the OPC verification can be effectively reduced and the real OPC error omission is avoided, so that the efficiency of checking an OPC verification result is improved.

Description

A kind of minimizing after OPC revises verified the method that wrong report is wrong
Technical field
The present invention relates to the technical field that a kind of microelectronics optics closes on correction, relate in particular to a kind of optics that reduces and close on correction (Optical Proximity Correction, abbreviation: OPC) revise the wrong method of rear checking wrong report.
Background technology
In semiconductor fabrication, along with characteristic dimension constantly reduce become more and more higher with figure complexity, OPC technology is the problem of development to adapt in pattern imaging process constantly to occur also.The OPC method being most widely used is at present the OPC modification method based on model, its ultimate principle is by setting up the exposure model based on specific etching condition, original layout or target domain are simulated to obtain simulation error, then original layout is carried out to segmentation cutting by certain rule, according to simulation error, segment is carried out to migration simulation again, domain after the simulation of the several bouts correction consistent with target domain with obtaining analog result with correction.
Be subject to mask plate and make restriction and the limitation of OPC execution time of ability, OPC modification method based on model inevitably exists some OPC revise weakness or correct mistakes, if revising weakness, these can not find in time just may cause the defective workmanship point on silicon chip, therefore the revised mock survey checking of OPC is just introduced in OPC publication flow process, after OPC revises, simulation is checked and verified by domain after simulation OPC correction and checks that analog result is to be confirmed whether to exist potential technique weakness or defective workmanship, these simplation verification general inspections comprise whether having bridge joint and broken string, whether the contact area of levels is in technique tolerance band, whether mimic diagram and targeted graphical deviation be in permissible range etc.
After OPC revises, simulation is checked and verified and generally can be divided into two classes, the one, the absolute dimension of domain inspection simulation profile after simulation OPC revises, check whether analog result exists the graphical dots that is less than given size or specification, this inspection method can detect fast OPC and revise and whether can cause technique weakness and general little wrong wrong report or report more, if but original layout or target version figure existing problems, or when software exists leak to cause OPC to correct mistakes, (increase such as figure is extra or disappear), likely can cause some mistakes to be failed to report; Equations of The Second Kind is the relative scale of comparison analog result size and target layout size, in the time that exceeding limit value, the proportional jitter of simulation size and target size reports an error in order to check by this graphical dots, the problem of much failing to report that these class methods can avoid first kind method to relate to, but be subject to the impact of some photoetching physics limits etc., often there are some wrong wrong reports or report more, when mistake is reported the efficiency that can affect inspection when too much by mistake.
Conventionally simulation verification method after can revising in conjunction with above-mentioned two kinds of OPC that mention in actual mock survey proof procedure, generally, for the inspection relative deviation method of Equations of The Second Kind, for fear of too much wrong report, has introduced some filter methods to reduce wrong wrong report.Fig. 1 is the schematic diagram of simplation verification after existing OPC revises, shown in Figure 1.For figure a-quadrant, it is consistent with targeted graphical that OPC revises rear simulation, but figure B region is in turning recess, is subject to the impact of sphering effect, its simulation size is bigger than normal than target size, the closer to corner, deviation value is larger, because these sphering effects are unavoidable, nor can affect the performance of device, generally can ignore, so form exclusionary zone in simplation verification process, ignore the inspection in this region; This ignores the scope of inspection or region is general sets a fixed value from turning, or the fixed value of off-line end etc., L1 as shown in Figure 1, in re-entrant angle L1 length range do not make simplation verification after check; The turning sphering problem of figure is relevant with several factors, at conditions of exposure and OPC modification method definite in the situation that, and it and dimension of picture, shape and pattern density etc. are relevant; In the time that the turning sphering simulating exceedes setting value L1 from the distance of re-entrant angle, while being also R1>L1.Fig. 2 is the schematic diagram of simplation verification wrong report after existing OPC revises, shown in Figure 2, because the figure that exceedes exclusionary zone will do simplation verification inspection, is easy to formation and reports an error, because it is caused by figure turning sphering.If increase the size of L1, exclusionary zone is expanded, perhaps can filter the figure of some wrong reports, if but in exclusionary zone, OPC correction existing problems also will be left in the basket with it, there is certain risk, the value that therefore can not remove directly to increase L1 because of the existence of wrong report in actual applications.
Publication number is that the Chinese patent of CN103513506A discloses a kind of optical proximity correction method, comprises the following steps: 1) make two test light and cut blocks for printing, and layer pattern before first placement, described front layer pattern is the figure that produces pattern or rete variation; Layer opc test figure after second placement; 2) prepare silicon chip according to process sequence, on the silicon chip that there is no pattern, second reticle carried out to gluing, exposure, development, collect the numerical value of the critical size of photoetching process, set up OPC model according to the photoetching process numerical value of collecting; 3) prepare silicon chip according to process sequence, on the silicon chip that there is no pattern, first reticle carried out to gluing, exposure, development, the pattern of layer pattern before producing; 4) again second reticle carried out to gluing, exposure, development, collect the numerical value of the critical size of photoetching process, and according to the numerical value of the photoetching process critical size of collecting, set up selectivity deviation algorithm, be characterized in the deviation value that different regions need to increase; 5) do not having pattern region use step 2) set up OPC; In the region that has pattern, the deviation value calculating according to step 4) re-starts OPC and revises.
Publication number is that the Chinese patent of CN1869819A discloses a kind of method and system that closes on correction for optics, comprises the following steps: identification has the interested figure that needs the limit of segmentation; Identify one or more influential figures that are different from described interested figure; Level and smooth described one or more influential figures, to be formed with the level and smooth influential figure on level and smooth limit, the level and smooth amount of wherein said one or more influential figures, the impact of the imaging process according to described influential figure on described interested figure changes; According to the level and smooth limit of described level and smooth influential figure, limit the segmentation on the limit of described interested figure; And carrying out the OPC of described interested figure, wherein said OPC comprises the described segmentation on the limit of adjusting described interested figure.
How to reduce OPC authentication error wrong report and avoid the OPC problem of omitting that corrects mistakes but prior art is all unexposed.
Summary of the invention
A kind of wrong method of checking wrong report after the object of the present invention is to provide OPC of minimizing to revise, in checking and verifying with simulation after solving existing OPC and revising, owing to being subject to the impact of the optical approach effects such as figure sphering, in the time checking the relative deviation of simulation size and target size, can there is the problem of wrong wrong report.
To achieve these goals, the technical scheme that the present invention takes is:
Reduce OPC and revise a rear method of verifying that wrong report is wrong, wherein, step 1: complete OPC and revise, produce OPC and revise the targeted graphical before rear figure and OPC correction after OPC has revised; Step 2: select the graphics field that causes the wrong report of OPC authentication error after OPC has revised; Step 3: intercept the graph edge fragment in wrong wrong report graphics field figure; Step 4: form independently OPC validation region along graph edge fragment; Step 5: carry out OPC checking.
Above-mentioned a kind of minimizing after OPC revises verified the method that wrong report is wrong, wherein, in step 2, selects qualified re-entrant angle graph edge in targeted graphical.
Above-mentioned a kind of minimizing after OPC revises verified the method that wrong report is wrong, and wherein, in step 3, the summit of selecting re-entrant angle graph edge is starting point, intercepts graph edge fragment.
Above-mentioned a kind of minimizing after OPC revises verified the method that wrong report is wrong, wherein, cause the graph edge length of OPC authentication error wrong report to be greater than twice minimum design rule live width, in two adjacent sides, at least one adjacent side becomes 270 to spend with it, and the length of two adjacent sides is all greater than minimum design rule live width.
Above-mentioned a kind of minimizing after OPC revises verified the method that wrong report is wrong, wherein, is the minimum design rule live width of 1.25 times from initial cut-away view shape limit, graph edge re-entrant angle summit fragment length.
Above-mentioned a kind of minimizing after OPC revises verified the method that wrong report is wrong, wherein, in step 5, the region forming beyond independent OPC validation region verified, checks by the relative scale of simulation size and target size.
Above-mentioned a kind of minimizing after OPC revises verified the method that wrong report is wrong, wherein, when simulation size is between target size 95% to 105%, normal; Otherwise correction may have problems.
Above-mentioned a kind of minimizing after OPC revises verified the method that wrong report is wrong, wherein, in step 5, verifies forming independent OPC validation region, and this regional simulation size is not less than target size ratio less than normal.
Above-mentioned a kind of minimizing after OPC revises verified the method that wrong report is wrong, wherein, forms 95% of independent OPC validation region target size when simulation size is greater than, normal; Otherwise correction may have problems.
The present invention is owing to having adopted above-mentioned technology, and the good effect that makes it compared with prior art to have is:
The wrong method of checking wrong report after adopting a kind of OPC of minimizing of the present invention to revise, can effectively reduce the wrong report of OPC authentication error and avoid real OPC omissions that correct mistakes, thereby can improve the efficiency of OPC the result inspection.
Accompanying drawing explanation
With reference to appended accompanying drawing, to describe more fully embodiments of the invention.But appended accompanying drawing only, for explanation and elaboration, does not form limitation of the scope of the invention.
Fig. 1 is the schematic diagram of simplation verification after existing OPC revises;
Fig. 2 is the schematic diagram of simplation verification wrong report after existing OPC revises;
Fig. 3 is the schematic diagram of selecting the graphics field that may cause OPC checking wrong report;
Fig. 4 is that in OPC validation region D, OPC revises normal schematic diagram;
Fig. 5 is that in OPC validation region D, OPC revises in-problem schematic diagram;
Fig. 6 is the simulation schematic diagram larger with targeted graphical deviation after OPC revises;
Fig. 7 is the schematic diagram of selecting the first situation of qualified re-entrant angle graph edge in targeted graphical;
Fig. 8 is the schematic diagram of selecting the second case of qualified re-entrant angle graph edge in targeted graphical;
Fig. 9 is the schematic diagram on the re-entrant angle summit of the graph edge selected;
Figure 10 is the schematic diagram on the re-entrant angle summit of the graph edge selected;
Figure 11 is the test comparison figure of 5 cases.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
During after OPC correction at present, the relative size ratio of simplation verification checks, for fear of the impact of figure turning sphering, a general filtration zone or the filtration line segment of forming, figure in filtration zone or line end do not have reporting an error of mock survey, so just avoid a large amount of mistake wrong report problems, shown in Figure 1; But in the time that turning sphering is serious, will produce wrong wrong report problem, shown in Figure 2.
In order to reduce simplation verification mistake wrong report problem, adopt following methods to carry out the relative size ratio inspection of simplation verification:
1. first select the graphics field that may cause OPC checking wrong report, being characterized as in figure re-entrant angle region of this region, after OPC, simulation there will be turning sphering phenomenon, Fig. 3 is the schematic diagram of selecting the graphics field that may cause OPC checking wrong report, shown in Figure 3, the length L 2 in this region is relevant with etching condition and OPC modification method etc., recommendation is 1.25 times of minimum feature size of he design rules specify, in this distance range, substantially can cover sphering region, turning, this peak width L3 is not less than the live width of target domain itself, form a new OPC validation region D, target domain except validation region D is validation region C,
2. for OPC validation region C, verify according to normal mock survey method, such as in the relative scale of simulation size and target size checks, when simulation size between target size 95% and 105% between time, think that this result is normal, in the time exceeding this ratio, just forming reports an error a little revises and may have problems with prompting OPC;
3. for OPC validation region D, if owing to going inspection according to above-mentioned normal method, will form a wrong report point, because from simulation profile, the size at turning obviously exceedes target size, the closer to re-entrant angle, deviation ratio is larger; The feature of the simulation profile of validation region D is that this regional simulation size is generally all bigger than normal than target layout size, based on this, as long as the simulation size in this region is not less than the target size ratio less than normal of specification specifies, such as being greater than 95% of D regional aim size, simulation size is normal result, think that OPC revises normal, Fig. 4 is that in OPC validation region D, OPC revises normal schematic diagram, shown in Figure 4; Otherwise, if the ratio of the simulation size in D region and target size is less than the ratio of specification specifies, thinking that analog result is less than normal, OPC revises and may have problems, and Fig. 5 is that in OPC validation region D, OPC revises in-problem schematic diagram, shown in Figure 5.
Carry out the relative size ratio inspection of the rear simplation verification of OPC correction based on the above method, can avoid the checking wrong report after a lot of normal OPC correction results, and can detect the OPC figure that really has OPC correction problem.
Traditional OPC checking filter method can reduce most OPC and relatively verify wrong report problem, but owing to having contradiction in the problem reducing the generation of wrong report point and avoid real OPC to correct mistakes, the problem of solution OPC wrong report that can not be basic, and there is certain OPC risk of failing to report that corrects mistakes.
Use this method to test 5 cases, and OPC checking testing result after benchmark OPC verification method and improvement, Figure 11 is the test comparison figure of 5 cases, shown in Figure 11.OPC verification method after improvement has reduced the OPC checking wrong report problem much causing due to turning sphering, can be checked through by the not enough OPC checking causing of OPC correction and report an error simultaneously.Fig. 6 is the rear simulation of the OPC correction schematic diagram larger with targeted graphical deviation, shown in Figure 6, and this graphical dots, in the middle of straight-line segment, is to cause the rear simulation of OPC correction larger with targeted graphical deviation because OPC revises deficiency.
Figure and the OPC targeted graphical before revising after producing OPC revise after OPC having revised, in OPC proof procedure, after OPC revises, figure is used for doing shape and the size after simulation photoetching, targeted graphical can be used as OPC checking with reference to figure or size.
For selecting the graphics field that may cause OPC checking wrong report, describe as 80nm minimum feature as example take design rule:
First select qualified re-entrant angle graph edge in targeted graphical, this graph edge meets the following conditions: Fig. 7 is the schematic diagram of selecting the first situation of qualified re-entrant angle graph edge in targeted graphical, the first situation is shown in Figure 7, an adjacent edge CA1 of graph edge CE1 becomes an angle of 90 degrees and its length to be greater than 80nm with it, an other adjacent side CA2 becomes 270 jiaos and its length to be greater than 80nm with it; The length of CE1 itself is greater than the design rule minimum feature 160nm of twice.Fig. 8 is the schematic diagram of selecting the second case of qualified re-entrant angle graph edge in targeted graphical, second case as shown in Figure 8, two adjacent side CA1 of CE1 and CA2 become 270 jiaos and its length to be greater than 80nm with it, the length of CE1 itself is greater than the design rule minimum feature 160nm of twice.
Then take the re-entrant angle summit CN1 of the graph edge selected as starting point, intercepted length is the line segment CE2 of 1.25 times of minimal design live width sizes, Fig. 9 is the schematic diagram on the re-entrant angle summit of the graph edge selected, Figure 10 is the schematic diagram on the re-entrant angle summit of the graph edge selected, shown in Fig. 9 and Figure 10, this routine intercepted length is 100nm.
Then take obtained line segment CE2 as limit, form a rectangular area E along figure internal direction, the live width of another of rectangle to length of side CE2 place lines, shown in Fig. 9 and Figure 10.
Complete after above-mentioned steps, OPC targeted graphical region is divided into two parts, and the figure except E region checks according to common OPC verification method.As verified according to normal mock survey method, such as in the relative size ratio of simulation size and target size checks, when simulation size between target size 95% and 105% between time, think that this result is normal, in the time exceeding this ratio, just forming reports an error a little revises and may have problems with prompting OPC.As long as E region is not less than the target size ratio less than normal of specification specifies according to the simulation size in this region, such as being greater than 95% of D regional aim size, simulation size is normal result, think that OPC revises normal; Otherwise, if the ratio of the simulation size in D region and target size is less than the ratio of specification specifies, thinking that analog result is less than normal, OPC revises and may have problems.
The foregoing is only preferred embodiment of the present invention; not thereby limit embodiments of the present invention and protection domain; to those skilled in the art; the scheme that being equal to of should recognizing that all utilizations instructions of the present invention and diagramatic content done replaces and apparent variation obtains, all should be included in protection scope of the present invention.

Claims (9)

1. reduce after OPC revises and verify the method that wrong report is wrong, it is characterized in that,
Step 1: complete OPC and revise, produce OPC and revise the targeted graphical before rear figure and OPC correction after OPC has revised;
Step 2: select the graphics field that causes the wrong report of OPC authentication error after OPC has revised;
Step 3: intercept the graph edge fragment in wrong wrong report graphics field figure;
Step 4: form independently OPC validation region along graph edge fragment;
Step 5: carry out OPC checking.
2. reduce according to claim 1 after OPC revises and verify the method that wrong report is wrong, it is characterized in that, in step 2, select qualified re-entrant angle graph edge in targeted graphical.
3. reduce according to claim 2 after OPC revises and verify the method that wrong report is wrong, it is characterized in that, in step 3, the summit of selecting re-entrant angle graph edge is starting point, intercepts graph edge fragment.
4. reduce according to claim 3 after OPC revises and verify the method that wrong report is wrong, it is characterized in that, cause the graph edge length of OPC authentication error wrong report to be greater than twice minimum design rule live width, article two, in adjacent side, at least one adjacent side becomes 270 to spend with it, and the length of two adjacent sides is all greater than minimum design rule live width.
5. reducing according to claim 3 after OPC revises and verify the method that wrong report is wrong, it is characterized in that, is the minimum design rule live width of 1.25 times from initial cut-away view shape limit, graph edge re-entrant angle summit fragment length.
6. reduce according to claim 1 after OPC revises and verify the method that wrong report is wrong, it is characterized in that, in step 5, the region forming beyond independent OPC validation region is verified, check by the relative scale of simulation size and target size.
7. reduce according to claim 6 after OPC revises and verify the method that wrong report is wrong, it is characterized in that, when simulation size is between target size 95% to 105%, normal; Otherwise correction may have problems.
8. reduce according to claim 1 after OPC revises and verify the method that wrong report is wrong, it is characterized in that, in step 5, verify forming independent OPC validation region, this regional simulation size is not less than target size ratio less than normal.
9. reduce according to claim 8 after OPC revises and verify the method that wrong report is wrong, it is characterized in that, form 95% of independent OPC validation region target size when simulation size is greater than, normal; Otherwise correction may have problems.
CN201410106502.2A 2014-03-20 2014-03-20 A kind of wrong method of checking wrong report after reduction OPC amendments Active CN103885282B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410106502.2A CN103885282B (en) 2014-03-20 2014-03-20 A kind of wrong method of checking wrong report after reduction OPC amendments

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410106502.2A CN103885282B (en) 2014-03-20 2014-03-20 A kind of wrong method of checking wrong report after reduction OPC amendments

Publications (2)

Publication Number Publication Date
CN103885282A true CN103885282A (en) 2014-06-25
CN103885282B CN103885282B (en) 2017-11-03

Family

ID=50954243

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410106502.2A Active CN103885282B (en) 2014-03-20 2014-03-20 A kind of wrong method of checking wrong report after reduction OPC amendments

Country Status (1)

Country Link
CN (1) CN103885282B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105159026A (en) * 2015-07-29 2015-12-16 上海华力微电子有限公司 Optical proximity correction validation method of gate region
WO2017206809A1 (en) * 2016-05-31 2017-12-07 无锡华润上华半导体有限公司 Method and system for correction of optical proximity effect
US10216890B2 (en) 2004-04-21 2019-02-26 Iym Technologies Llc Integrated circuits having in-situ constraints
CN109765751A (en) * 2019-03-29 2019-05-17 德淮半导体有限公司 The production method of optical adjacent correction method and mask plate
CN109857881A (en) * 2019-01-31 2019-06-07 上海华虹宏力半导体制造有限公司 The quantitative analysis method of verification pattern for OPC verification
CN111948900A (en) * 2020-08-18 2020-11-17 上海华力微电子有限公司 Method for identifying characteristic graph of layout
CN113376954A (en) * 2021-06-22 2021-09-10 上海积塔半导体有限公司 OPC detection method, computer device and computer readable storage medium

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801954A (en) * 1996-04-24 1998-09-01 Micron Technology, Inc. Process for designing and checking a mask layout
US20070061772A1 (en) * 2005-09-09 2007-03-15 Brion Technologies, Inc. System and method for mask verification using an individual mask error model
KR100788358B1 (en) * 2006-11-29 2008-01-02 동부일렉트로닉스 주식회사 Verification method of optical proximity correction
CN101937171A (en) * 2009-07-03 2011-01-05 中芯国际集成电路制造(上海)有限公司 Method for building optical proximity correction model, optical proximity correction method and mask
CN101995763A (en) * 2009-08-17 2011-03-30 上海宏力半导体制造有限公司 Optical proximity correction method
CN103311236A (en) * 2012-03-14 2013-09-18 台湾积体电路制造股份有限公司 Dissection splitting with optical proximity correction to reduce corner rounding

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801954A (en) * 1996-04-24 1998-09-01 Micron Technology, Inc. Process for designing and checking a mask layout
US20070061772A1 (en) * 2005-09-09 2007-03-15 Brion Technologies, Inc. System and method for mask verification using an individual mask error model
KR100788358B1 (en) * 2006-11-29 2008-01-02 동부일렉트로닉스 주식회사 Verification method of optical proximity correction
CN101937171A (en) * 2009-07-03 2011-01-05 中芯国际集成电路制造(上海)有限公司 Method for building optical proximity correction model, optical proximity correction method and mask
CN101995763A (en) * 2009-08-17 2011-03-30 上海宏力半导体制造有限公司 Optical proximity correction method
CN103311236A (en) * 2012-03-14 2013-09-18 台湾积体电路制造股份有限公司 Dissection splitting with optical proximity correction to reduce corner rounding

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10860773B2 (en) 2004-04-21 2020-12-08 Iym Technologies Llc Integrated circuits having in-situ constraints
US10216890B2 (en) 2004-04-21 2019-02-26 Iym Technologies Llc Integrated circuits having in-situ constraints
US10846454B2 (en) 2004-04-21 2020-11-24 Iym Technologies Llc Integrated circuits having in-situ constraints
CN105159026A (en) * 2015-07-29 2015-12-16 上海华力微电子有限公司 Optical proximity correction validation method of gate region
WO2017206809A1 (en) * 2016-05-31 2017-12-07 无锡华润上华半导体有限公司 Method and system for correction of optical proximity effect
US10816893B2 (en) 2016-05-31 2020-10-27 Csmc Technologies Fab2 Co., Ltd. Method and system for correction of optical proximity effect
CN109857881A (en) * 2019-01-31 2019-06-07 上海华虹宏力半导体制造有限公司 The quantitative analysis method of verification pattern for OPC verification
CN109857881B (en) * 2019-01-31 2021-01-22 上海华虹宏力半导体制造有限公司 Quantitative analysis method of verification graph for OPC verification
CN109765751A (en) * 2019-03-29 2019-05-17 德淮半导体有限公司 The production method of optical adjacent correction method and mask plate
CN111948900A (en) * 2020-08-18 2020-11-17 上海华力微电子有限公司 Method for identifying characteristic graph of layout
CN111948900B (en) * 2020-08-18 2024-01-23 上海华力微电子有限公司 Method for identifying characteristic pattern of layout
CN113376954A (en) * 2021-06-22 2021-09-10 上海积塔半导体有限公司 OPC detection method, computer device and computer readable storage medium
CN113376954B (en) * 2021-06-22 2022-03-22 上海积塔半导体有限公司 OPC detection method, computer device and computer readable storage medium
WO2022267835A1 (en) * 2021-06-22 2022-12-29 上海积塔半导体有限公司 Opc detection method, computer device and computer-readable storage medium

Also Published As

Publication number Publication date
CN103885282B (en) 2017-11-03

Similar Documents

Publication Publication Date Title
CN103885282A (en) Verification method for reducing false reporting after OPC (Optical Proximity Correction)
CN107797375B (en) Method for correcting target pattern
US8146025B2 (en) Method for correcting layout pattern using rule checking rectangle
US7827520B2 (en) Method for correcting optical proximity effect
CN105159026B (en) The optics of area of grid closes on amendment verification method
KR101082103B1 (en) Method for verification of optical proximity correct
CN107450266A (en) The modification method and system of optical approach effect
KR20110106709A (en) How to check layout
KR20020031304A (en) Method for mask data verification and computer readable record medium recording the verification program
JP4854319B2 (en) Verification method of optical proximity correction using layout vs layout inspection method
TWI588595B (en) Method of optical proximity correction
CN101191996B (en) Method for manufacturing photomask and method for repairing optical proximity correction
CN113050365A (en) Optical proximity correction method and system, mask, equipment and medium
CN101989309B (en) How to correct the layout pattern
KR100702794B1 (en) How to correct mask layout through OPC verification
US8383299B2 (en) Double patterning mask set and method of forming thereof
JP5572973B2 (en) Pattern verification method, verification apparatus, and program
US10474026B2 (en) Method for correcting bevel corners of a layout pattern
JP4335563B2 (en) Mask pattern verification method, mask pattern verification program, and mask manufacturing method
JP2007292983A (en) Semiconductor layout pattern verification device and mask pattern generation device
JP2010122438A (en) Method, program and device for verifying lithographic simulation model
KR100944332B1 (en) Method of manufacturing mask of semiconductor device and method of manufacturing semiconductor device
KR101143622B1 (en) Method for verifying optical proximity correction
CN104516192A (en) Method of establishing OPC model and inspection method of arrangement pattern
JP2005250360A (en) Verification apparatus and verification method for mask pattern

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant