CN103882512A - Production technology for controlling oxygen donor single crystal - Google Patents
Production technology for controlling oxygen donor single crystal Download PDFInfo
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- CN103882512A CN103882512A CN201410110949.7A CN201410110949A CN103882512A CN 103882512 A CN103882512 A CN 103882512A CN 201410110949 A CN201410110949 A CN 201410110949A CN 103882512 A CN103882512 A CN 103882512A
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Abstract
The invention relates to a production technology for controlling oxygen donor single crystal. The production technology comprises the following steps: stretching the neck, shouldering, turning the shoulder, equalizing diameter, ending and controlling oxygen. The production technology is characterized in that in all steps, the liquid level inside a crucible (1) in a single crystal furnace is always kept at a high pan level; the high pan level is the distance, namely 15-25mm, between the liquid level inside the crucible (1) and the bottom of a diversion screen (2). The production technology has the beneficial effects that the time of the single crystal in an oxygen donor production space is reduced by control on the rotating speed of seed crystal in the production step, control on the rotating speed of the crucible, control on the ascending speed of the crucible, control on the flow of an inert gas, and improvement of an inner thermal insulation layer of the single crystal furnace and a diversion screen insulation layer, so as to reduce the oxygen donor.
Description
Technical field
The present invention relates to monocrystalline technical field of producing, especially a kind of producing and manufacturing technique of controlling oxygen alms giver monocrystalline.
Background technology
In recent years along with the variation of Market Situation, require very strict to quality product, in monocrystalline production process, oxygen alms giver monocrystalline is the important component part that causes defective monocrystalline, oxygen alms giver monocrystalline ratio accounts for 30% of produce single crystal, cause vast scale oxygen alms giver monocrystalline can not meet the demand of Market Situation, constantly decline in monocrystalline profit ratio of sales.A large amount of oxygen alms giver monocrystalline directly cause production cost to increase, and cause serious financial loss to company, therefore effectively reduce oxygen alms giver monocrystalline, improve constantly monocrystalline quality, reduce production costs extremely urgent.
Summary of the invention
The object of this invention is to provide a kind of producing and manufacturing technique that produces control oxygen alms giver monocrystalline oxygen alms giver monocrystalline, raising monocrystalline quality in production that reduces.
In order to complete above-mentioned purpose, the technical solution used in the present invention is:
A kind of producing and manufacturing technique of controlling oxygen alms giver monocrystalline, comprise the step of craning one, shouldering step, turn shoulder step, isometrical step, ending step and control oxygen step, above-mentioned in steps in, liquid level in dry pot in monocrystalline body of heater remains at heavy pot position, and described heavy pot position is that the distance bottom liquid level and the flow guiding screen of doing in pot is 15～25mm;
Described cranes one in step, and the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed of crucible lifting is 0mm/min;
In described shouldering step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed of crucible lifting is 0.05～0.15mm/min;
Described turns in shoulder step, and the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed of crucible lifting is 0.15～0.2mm/min;
In described isometrical step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed of crucible lifting is 0.19～0.25mm/min;
In described ending step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible is 7～9r/min, and the speed of crucible lifting is 0.15～0.05mm/min.
Described control oxygen step is the inert gas flow of controlling in monocrystalline body of heater, and described craning one in step, the inert gas flow in monocrystalline body of heater is 30～40L/min;
In described shouldering step, the inert gas flow in monocrystalline body of heater is 30～40L/min;
Described turning in shoulder step, the inert gas flow in monocrystalline body of heater is 30～40L/min;
In described isometrical step, the inert gas flow in monocrystalline body of heater is at the uniform velocity reduced to 20L/min from 40L/min;
In described ending step, the inert gas flow in monocrystalline body of heater is 20L/min.
Described cranes one in step, and the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed of crucible lifting is 0mm/min;
In described shouldering step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed of crucible lifting is for to be at the uniform velocity increased to 0.15mm/min from 0.05mm/min;
Described turns in shoulder step, and the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed of crucible lifting is that 0.15mm/min is at the uniform velocity increased to 0.195mm/min;
In described isometrical step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed of crucible lifting is that 0.195mm/min is at the uniform velocity increased to 0.22mm/min;
In described ending step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible is 8r/min, and the speed of crucible lifting is 0.1mm/min.
Described craning one in step, the inert gas flow in monocrystalline body of heater is 30L/min;
In described shouldering step, the inert gas flow in monocrystalline body of heater is 30L/min;
Described turning in shoulder step, the inert gas flow in monocrystalline body of heater is 30L/min;
In described isometrical step, the inert gas flow in monocrystalline body of heater at the uniform velocity reduces to 20L/min from 30L/min;
In described ending step, the inert gas flow in monocrystalline body of heater is 20L/min.
Also comprise the improvement of single crystal growing furnace internal insulation layer and flow guiding screen thermal insulation layer, described single crystal growing furnace internal insulation layer is divided into from the upper oral part of crucible top heat preservation zone and the bottom heat preservation zone that upper and lower two portions are connected, the sidewall entirety of described thermal insulation layer is upper-thin-lower-thick shape, the thickness of bottom heat preservation zone is at least not less than 80mm, and the thickness of top heat preservation zone is not more than 58mm;
The improvement of described flow guiding screen thermal insulation layer comprises the improvement of thermal insulation layer height and the improvement of thermal insulation layer position, the thermal insulation layer height of flow guiding screen inside is reduced to not higher than 167mm, the thermal insulation layer of flow guiding screen inside is arranged on the bottom of flow guiding screen, is provided with cavity at the top of flow guiding screen inside.
The invention has the beneficial effects as follows: by rotating speed control, the control of crucible lifting speed and the control of inert gas flow of the control to seed crystal rotating speed in production stage, crucible and the improvement of single crystal growing furnace internal insulation layer and flow guiding screen thermal insulation layer, reduce monocrystalline produces space time in oxygen alms giver, reach the object that reduces oxygen alms giver.
Brief description of the drawings
Fig. 1 is the structural representation of single crystal growing furnace in the present invention.
Fig. 2 is the structural representation of single crystal growing furnace in prior art.
In figure, 1, crucible, 2, flow guiding screen, 3, top heat preservation zone, 4, bottom heat preservation zone.
Embodiment
The present invention is a kind of producing and manufacturing technique of controlling oxygen alms giver monocrystalline, by rotating speed control, the control of crucible lifting speed and the control of inert gas flow of the control to seed crystal rotating speed in production stage, crucible and the improvement of single crystal growing furnace internal insulation layer and flow guiding screen thermal insulation layer, reduce monocrystalline produces space time in oxygen alms giver, reach the object that reduces oxygen alms giver.
Below in conjunction with accompanying drawing, the present invention will be further described.
Described cranes one in step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, and the speed that crucible 1 rises is 0mm/min, and the speed of single crystal growing is 2mm/min～6mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 30L/min, is not affecting under brilliant precondition, keeps the raising of heavy pot position and crucible 1 crucible position that single crystal growing speed is accelerated, reduce monocrystalline produces space time in oxygen alms giver, reach the object that reduces oxygen alms giver;
In described shouldering step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, and the speed that crucible 1 rises is 0.05mm/min, and the speed of single crystal growing is 0.7mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 30L/min, guarantees that crucible position remains at the high crucible position of craning one in whole shouldering process, makes to turn the rear single crystal growing speed of shoulder and accelerates, reduce monocrystalline produces space time in oxygen alms giver, reach the object that reduces oxygen alms giver;
Described turns in shoulder step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, the speed that crucible 1 rises is 0.15mm/min, the speed of single crystal growing is 0.7mm/min～2mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 30L/min, continuing to strengthen crucible rises to certainty ratio, meet isometrical crucible and rise ratio until given crucible rises ratio, guarantee whole turn shoulder process in crucible position remain at the high crucible position of craning one, make single crystal growing speed remain high pulling rate, reduce monocrystalline produces region time in oxygen alms giver, reach the object that reduces oxygen alms giver,
In described isometrical step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, the speed that crucible 1 rises is 0.19mm/min, the speed of single crystal growing is 0.85mm/min～1.05mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is at the uniform velocity reduced to 20L/min from 30L/min, ensure vacuum pumping speed, increase the flow of rare gas element, should ensure that crystal growth crucible position is constant all the time, ensure again silicon liquid surface quick heat radiating, improve crystalline growth velocity, shorten the isometrical time, make the temperature range producing by oxygen alms giver fast in single crystal growth process, reach the object that reduces oxygen alms giver,
In described ending step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 7r/min, the speed that crucible 1 rises is 0.15mm/min, the speed of single crystal growing is 0.5mm/min～1.15mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 20L/min, before ending, bottom quartz crucible, be arc, stock chart area reduces gradually, must continue to increase crucible liter to certainty ratio, remain crucible position while craning one, accelerate terminal velocity, make whole monocrystalline reduce the temperature province producing by oxygen alms giver, reach the object that reduces oxygen alms giver,
In described control oxygen step, make full use of low oxygen process crystal pulling, improve the crucible speed of walking around and turn to 8-10, suppress the thermal convection in silicon liquid, do not allow quartz crucible and a large amount of SiO of silicon contact surface generation enter in silicon liquid, strictly control monocrystalline head oxygen level.
Also comprise the improvement of single crystal growing furnace internal insulation layer and flow guiding screen 2 thermal insulation layers, described single crystal growing furnace internal insulation layer is divided into from the upper oral part of crucible 1 top heat preservation zone 3 and the bottom heat preservation zone 4 that upper and lower two portions are connected, the sidewall entirety of described thermal insulation layer is upper-thin-lower-thick shape, the thickness of bottom heat preservation zone 4 is at least not less than 80mm, and the thickness of top heat preservation zone 3 is not more than 58mm;
The improvement of described flow guiding screen 2 thermal insulation layers comprises the improvement of thermal insulation layer height and the improvement of thermal insulation layer position, the thermal insulation layer height of flow guiding screen 2 inside is reduced to not higher than 167mm, the thermal insulation layer of flow guiding screen 2 inside is arranged on the bottom of flow guiding screen 2, is provided with cavity at the top of flow guiding screen 2 inside.
Described cranes one in step, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, and the speed that crucible 1 rises is 0mm/min, and the speed of single crystal growing is 0mm/min～6mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 40L/min, is not affecting under brilliant precondition, keeps the raising of heavy pot position and crucible 1 crucible position that single crystal growing speed is accelerated, reduce monocrystalline produces space time in oxygen alms giver, reach the object that reduces oxygen alms giver;
In described shouldering step, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, and the speed that crucible 1 rises is 0.15mm/min, and the speed of single crystal growing is 0.7mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 40L/min, guarantees that crucible position remains at the high crucible position of craning one in whole shouldering process, makes to turn the rear single crystal growing speed of shoulder and accelerates, reduce monocrystalline produces space time in oxygen alms giver, reach the object that reduces oxygen alms giver;
Described turns in shoulder step, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, the speed that crucible 1 rises is 0.195mm/min, the speed of single crystal growing is 0.7mm/min～2mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 40L/min, continuing to strengthen crucible rises to certainty ratio, meet isometrical crucible and rise ratio until given crucible rises ratio, guarantee whole turn shoulder process in crucible position remain at the high crucible position of craning one, make single crystal growing speed remain high pulling rate, reduce monocrystalline produces region time in oxygen alms giver, reach the object that reduces oxygen alms giver,
In described isometrical step, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, the speed that crucible 1 rises is 0.22mm/min, the speed of single crystal growing is 0.85mm/min～1.05mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is at the uniform velocity reduced to 20L/min from 40L/min, ensure vacuum pumping speed, increase the flow of rare gas element, should ensure that crystal growth crucible position is constant all the time, ensure again silicon liquid surface quick heat radiating, improve crystalline growth velocity, shorten the isometrical time, make the temperature range producing by oxygen alms giver fast in single crystal growth process, reach the object that reduces oxygen alms giver,
In described ending step, the rotating speed of seed crystal is 8r/min, the rotating speed of crucible 1 is 9r/min, the speed that crucible 1 rises is 0.05mm/min, the speed of single crystal growing is 0.5mm/min～1.15mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 20L/min, before ending, bottom quartz crucible, be arc, stock chart area reduces gradually, must continue to increase crucible liter to certainty ratio, remain crucible position while craning one, accelerate terminal velocity, make whole monocrystalline reduce the temperature province producing by oxygen alms giver, reach the object that reduces oxygen alms giver,
In described control oxygen step, make full use of low oxygen process crystal pulling, improve the crucible speed of walking around and turn to 8-10, suppress the thermal convection in silicon liquid, do not allow quartz crucible and a large amount of SiO of silicon contact surface generation enter in silicon liquid, strictly control monocrystalline head oxygen level.
Also comprise the improvement of single crystal growing furnace internal insulation layer and flow guiding screen 2 thermal insulation layers, described single crystal growing furnace internal insulation layer is divided into from the upper oral part of crucible 1 top heat preservation zone 3 and the bottom heat preservation zone 4 that upper and lower two portions are connected, the sidewall entirety of described thermal insulation layer is upper-thin-lower-thick shape, the thickness of bottom heat preservation zone 4 is at least not less than 80mm, and the thickness of top heat preservation zone 3 is not more than 58mm;
The improvement of described flow guiding screen 2 thermal insulation layers comprises the improvement of thermal insulation layer height and the improvement of thermal insulation layer position, the thermal insulation layer height of flow guiding screen 2 inside is reduced to not higher than 167mm, the thermal insulation layer of flow guiding screen 2 inside is arranged on the bottom of flow guiding screen 2, is provided with cavity at the top of flow guiding screen 2 inside.
Described cranes one in step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, and the speed that crucible 1 rises is 0mm/min, and the speed of single crystal growing is 0mm/min～6mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 30L/min, is not affecting under brilliant precondition, keeps the raising of heavy pot position and crucible 1 crucible position that single crystal growing speed is accelerated, reduce monocrystalline produces space time in oxygen alms giver, reach the object that reduces oxygen alms giver;
In described shouldering step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, the speed that crucible 1 rises is for to be at the uniform velocity increased to 0.15mm/min from 0.05mm/min, the speed of single crystal growing is 0.7mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 30L/min, guarantee that crucible position remains at the high crucible position of craning one in whole shouldering process, after making to turn shoulder, single crystal growing speed is accelerated, reduce monocrystalline produces space time in oxygen alms giver, reach the object that reduces oxygen alms giver;
Described turns in shoulder step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, the speed that crucible 1 rises is that 0.15mm/min is at the uniform velocity increased to 0.195mm/min, the speed of single crystal growing is 0.7mm/min～2mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 30L/min, continuing to strengthen crucible rises to certainty ratio, meet isometrical crucible and rise ratio until given crucible rises ratio, guarantee whole turn shoulder process in crucible position remain at the high crucible position of craning one, make single crystal growing speed remain high pulling rate, reduce monocrystalline produces region time in oxygen alms giver, reach the object that reduces oxygen alms giver,
In described isometrical step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, the speed that crucible 1 rises is that 0.195mm/min is at the uniform velocity increased to 0.22mm/min, the speed of single crystal growing is 0.85mm/min～1.05mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is at the uniform velocity reduced to 20L/min from 30L/min, ensure vacuum pumping speed, increase the flow of rare gas element, should ensure that crystal growth crucible position is constant all the time, ensure again silicon liquid surface quick heat radiating, improve crystalline growth velocity, shorten the isometrical time, make the temperature range producing by oxygen alms giver fast in single crystal growth process, reach the object that reduces oxygen alms giver,
In described ending step, the rotating speed of seed crystal is 7r/min, the rotating speed of crucible 1 is 8r/min, the speed that crucible 1 rises is 0.1mm/min, the speed of single crystal growing is 0.5mm/min～1.15mm/min, now also comprise control oxygen step, inert gas flow in monocrystalline body of heater is 20L/min, before ending, bottom quartz crucible, be arc, stock chart area reduces gradually, must continue to increase crucible liter to certainty ratio, remain crucible position while craning one, accelerate terminal velocity, make whole monocrystalline reduce the temperature province producing by oxygen alms giver, reach the object that reduces oxygen alms giver,
In described control oxygen step, make full use of low oxygen process crystal pulling, improve the crucible speed of walking around and turn to 8-10, suppress the thermal convection in silicon liquid, do not allow quartz crucible and a large amount of SiO of silicon contact surface generation enter in silicon liquid, strictly control monocrystalline head oxygen level.
Also comprise the improvement of single crystal growing furnace internal insulation layer and flow guiding screen 2 thermal insulation layers, described single crystal growing furnace internal insulation layer is divided into from the upper oral part of crucible 1 top heat preservation zone 3 and the bottom heat preservation zone 4 that upper and lower two portions are connected, the sidewall entirety of described thermal insulation layer is upper-thin-lower-thick shape, the thickness of bottom heat preservation zone 4 is at least not less than 80mm, and the thickness of top heat preservation zone 3 is not more than 58mm;
The improvement of described flow guiding screen 2 thermal insulation layers comprises the improvement of thermal insulation layer height and the improvement of thermal insulation layer position, the thermal insulation layer height of flow guiding screen 2 inside is reduced to not higher than 167mm, the thermal insulation layer of flow guiding screen 2 inside is arranged on the bottom of flow guiding screen 2, is provided with cavity at the top of flow guiding screen 2 inside.
In the time starting working, first hot all parts of system is cleaned out, utilize reduce electrode column height strengthen on well heater along with large lid under the distance on edge, regulated laggard luggage material, found time, material, stablized, crane one.
Before craning one, regulate crucible position to check silicon liquid level under guide shell along inverted image by guide shell from viewing window, cannot see after inverted image crucible position, to promote 15-20mm be the crucible position of craning one, and generally the crucible position of craning one of prior art for till can't see guide shell inverted image, the 150mm left and right shouldering that starts to crane one for 20 minutes of seed crystal and liquid level contact stabilization, in the process of craning one, promote gradually and improve the crucible speed of walking around and turn to 8-10, slow given crucible liter after shouldering 15-20 minute, make crucible position in shouldering process remain constant, shouldering size turns shoulder to starting to lift speed after specified diameter 4/5ths, it is given to isometrical ratio that crucible rises ratio, turning shoulder diameter reaches and throws automatic control after standard specified diameter and enter isometrical step, strengthen the flow of rare gas element to reduce silicon liquid surface temperature simultaneously, accelerate monocrystalline crystallization velocity of variation, guarantee that crystal remains at high pulling rate in whole isometrical process, high crucible position, under the environment of high argon flow amount, pass through fast the temperature range of 500-300 °, realize and reduce oxygen alms giver monocrystalline, by above step, oxygen alms giver monocrystalline is reduced to 0.6% left and right from 1.2%, reduce the oxygen alms giver monocrystalline producing in producing and improved monocrystalline quality.
The advantage that the present invention compared with prior art exists:
1, in crystal growing process, remain that high crucible position, high pulling rate are isometrical, shorten the isometrical time, make the temperature range that produces by oxygen alms giver fast in single crystal growth process, reach high yield, stable yields, reduction oxygen alms giver's object;
2, make full use of low oxygen process crystal pulling, improve the crucible speed of walking around and turn to 8-10, suppress the thermal convection in silicon liquid, reduce quartz crucible and enter in silicon liquid with a large amount of SiO of silicon contact surface generation, strictly control monocrystalline head oxygen level.
Claims (5)
1. control the producing and manufacturing technique of oxygen alms giver monocrystalline for one kind, comprise the step of craning one, shouldering step, turn shoulder step, isometrical step, ending step and control oxygen step, it is characterized in that: above-mentioned in steps in, liquid level in crucible (1) in monocrystalline body of heater remains at heavy pot position, and described heavy pot position is that the distance bottom liquid level and the flow guiding screen (2) in crucible (1) is 15～25mm;
Described cranes one in step, and the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0mm/min;
In described shouldering step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0.05～0.15mm/min;
Described turns in shoulder step, and the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0.15～0.2mm/min;
In described isometrical step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0.19～0.25mm/min;
In described ending step, the rotating speed of seed crystal is 7～8r/min, and the rotating speed of crucible (1) is 7～9r/min, and the speed that crucible (1) rises is 0.15～0.05mm/min.
2. a kind of producing and manufacturing technique of controlling oxygen alms giver monocrystalline according to claim 1, it is characterized in that: described control oxygen step is the inert gas flow of controlling in monocrystalline body of heater, described craning one in step, the inert gas flow in monocrystalline body of heater is 30～40L/min;
In described shouldering step, the inert gas flow in monocrystalline body of heater is 30～40L/min;
Described turning in shoulder step, the inert gas flow in monocrystalline body of heater is 30～40L/min;
In described isometrical step, the inert gas flow in monocrystalline body of heater is at the uniform velocity reduced to 20L/min from 40L/min;
In described ending step, the inert gas flow in monocrystalline body of heater is 20L/min.
3. a kind of producing and manufacturing technique of controlling oxygen alms giver monocrystalline according to claim 1, is characterized in that: described cranes one in step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible (1) is 8r/min, and the speed that crucible (1) rises is 0mm/min;
In described shouldering step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible (1) is 8r/min, and the speed that crucible (1) rises is for to be at the uniform velocity increased to 0.15mm/min from 0.05mm/min;
Described turns in shoulder step, and the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible (1) is 8r/min, and the speed that crucible Φ rises is that 0.15mm/min is at the uniform velocity increased to 0.195mm/min;
In described isometrical step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible (1) is 8r/min, and the speed that crucible Φ rises is that 0.195mm/min is at the uniform velocity increased to 0.22mm/min;
In described ending step, the rotating speed of seed crystal is 7r/min, and the rotating speed of crucible (1) is 8r/min, and the speed that crucible (1) rises is 0.1mm/min.
4. a kind of producing and manufacturing technique of controlling oxygen alms giver monocrystalline according to claim 2, is characterized in that: described craning one in step, the inert gas flow in monocrystalline body of heater is 30L/min;
In described shouldering step, the inert gas flow in monocrystalline body of heater is 30L/min;
Described turning in shoulder step, the inert gas flow in monocrystalline body of heater is 30L/min;
In described isometrical step, the inert gas flow in monocrystalline body of heater at the uniform velocity reduces to 20L/min from 30L/min;
In described ending step, the inert gas flow in monocrystalline body of heater is 20L/min.
5. according to a kind of producing and manufacturing technique of controlling oxygen alms giver monocrystalline of any one described in claim 1 to 4, it is characterized in that: also comprise the improvement of single crystal growing furnace internal insulation layer and flow guiding screen (2) thermal insulation layer, described single crystal growing furnace internal insulation layer is divided into from the upper oral part of crucible (1) top heat preservation zone (3) and the bottom heat preservation zone (4) that upper and lower two portions are connected, the sidewall entirety of described thermal insulation layer is upper-thin-lower-thick shape, the thickness of bottom heat preservation zone (4) is at least not less than 80mm, and the thickness of top heat preservation zone (3) is not more than 58mm;
The improvement of described flow guiding screen (2) thermal insulation layer comprises the improvement of thermal insulation layer height and the improvement of thermal insulation layer position, the inner thermal insulation layer height of flow guiding screen (2) is reduced to not higher than 167mm, the inner thermal insulation layer of flow guiding screen (2) is arranged on the bottom of flow guiding screen (2), and the top inner at flow guiding screen (2) is provided with cavity.
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| CN104357901A (en) * | 2014-10-30 | 2015-02-18 | 内蒙古中环光伏材料有限公司 | Method for reducing oxygen donor content of Czochralski monocrystal |
| CN104372406A (en) * | 2014-11-14 | 2015-02-25 | 邢台晶龙电子材料有限公司 | Method for producing solar grade Czochralski silicon |
| CN104451872A (en) * | 2014-11-14 | 2015-03-25 | 邢台晶龙电子材料有限公司 | Production method of solar-grade czochralski silicon |
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