Summary of the invention
In view of above-mentioned condition, be necessary to provide two silver-layer low-radiation glass of a kind of high-performance and preparation method thereof, it also can improve heat-proof quality under the prerequisite with better light transmittance.
The invention provides the two silver-layer low-radiation glass of a kind of high-performance; it comprises glass substrate, and the two silver-layer low-radiation glass of this high-performance also comprise the first low surface resistance transparency conducting layer, the first silver layer, the first protective layer, the second low surface resistance transparency conducting layer, the second silver layer, the second protective layer, the 3rd low surface resistance transparency conducting layer and the top protective layer that are formed at successively on this glass substrate.
The material of this first low surface resistance transparency conducting layer, this second low surface resistance transparency conducting layer or the 3rd low surface resistance transparency conducting layer comprises tin indium oxide, Al-Doped ZnO or fluorine doped tin oxide.
The thickness of this first low surface resistance transparency conducting layer, this second low surface resistance transparency conducting layer or the 3rd low surface resistance transparency conducting layer is 10 ~ 100nm.
The thickness of this first silver layer or this second silver layer is 5 ~ 35nm.
The thickness of this first silver layer or this second silver layer is 8 ~ 20nm.
The material of this first protective layer or this second protective layer is metal, metal oxide, metal nitride, alloy, alloyed oxide or alloy nitride.
The material of this first protective layer or this second protective layer is titanium, nichrome, nickel chromium triangle oxide or nickel chromium triangle nitride.
The thickness of this first protective layer or this second protective layer is 0 ~ 10nm.
The material of this top protective layer is zirconia, and thickness is 5 ~ 50nm.
The present invention also provides the preparation method of the two silver-layer low-radiation glass of a kind of high-performance, and it comprises the steps: to provide glass substrate; On this glass substrate, deposit the first low surface resistance transparency conducting layer by the mode of magnetron sputtering or chemical vapour deposition (CVD); The mode that adds pulsed magnetron sputtering by direct current or direct current deposits the first silver layer on this first low surface resistance transparency conducting layer; The mode that adds pulsed magnetron sputtering by direct current or direct current deposits the first protective layer on this first silver layer; Mode by magnetron sputtering or chemical vapour deposition (CVD) deposits the second low surface resistance transparency conducting layer on this first protective layer; The mode that adds pulsed magnetron sputtering by direct current or direct current deposits the second silver layer on this second low surface resistance transparency conducting layer; The mode that adds pulsed magnetron sputtering by direct current or direct current deposits the second protective layer on this second silver layer; Mode by magnetron sputtering or chemical vapour deposition (CVD) deposits the 3rd low surface resistance transparency conducting layer on this second protective layer; And the mode that adds pulsed magnetron sputtering by direct current or direct current deposits top protective layer on the 3rd low surface resistance transparency conducting layer.
The first low surface resistance transparency conducting layer, the second low surface resistance transparency conducting layer and the 3rd low surface resistance transparency conducting layer of the two silver-layer low-radiation glass of above-mentioned high-performance are owing to having good electric conductivity and lower surface resistance, therefore can reduce radiance, improve the heat-proof quality of two silver-layer low-radiation glass, and can not have influence on two silver-layer low-radiation glass light transmittances; Thereby can guarantee that two silver-layer low-radiation glass, under the prerequisite with better light transmittance, also can improve heat-proof quality.
The specific embodiment
Below in conjunction with drawings and Examples, two silver-layer low-radiation glass of high-performance of the present invention and preparation method thereof are described in further detail.
Refer to Fig. 1, the two silver-layer low-radiation glass 100 of high-performance of the embodiment of the present invention comprise glass substrate 11 and the first low surface resistance transparency conducting layer 11, the first silver layer 12, the first protective layer 13, the second low surface resistance transparency conducting layer 14, the second silver layer 15, the second protective layer 16, the 3rd low surface resistance transparency conducting layer 17 and top protective layer 18 that are formed at successively on glass substrate 10.
Specifically in the present embodiment, the first low surface resistance transparency conducting layer 11, the second low surface resistance transparency conducting layer 14 or the 3rd low surface resistance transparency conducting layer 17 are to have good electric conductivity and lower surface resistance, its material can comprise tin indium oxide (ITO), Al-Doped ZnO (AZO) or fluorine doped tin oxide (FTO), is preferably tin indium oxide.And the thickness of the first low surface resistance transparency conducting layer 11, the second low surface resistance transparency conducting layer 14 or the 3rd low surface resistance transparency conducting layer 17 can be 10 ~ 100 nanometers (nm).
The thickness of the first silver layer 12 or the second silver layer 15 can be 5 ~ 35nm, is preferably 8 ~ 20nm.
The effect of the first protective layer 13 and the second protective layer 16 is the first silver layer 12 and second silver layers 15 of protecting respectively its below, thereby prevents the oxidized or sulfuration in process of production of the first silver layer 12 and the second silver layer 15.The material of the first protective layer 13 and the second protective layer 16 can be metal, metal oxide, metal nitride, and alloy, alloyed oxide or alloy nitride are for example titanium (Ti), nichrome (NiCr), nickel chromium triangle oxide (NiCrO
x) or nickel chromium triangle nitride (NiCrN
x).The thickness of the first protective layer 13 or the second protective layer 16 can be 0 ~ 10nm.
Top protective layer 18 should have good scratch resistance, decay resistance, thereby whole rete is shielded.The material of top protective layer 18 can be zirconia (ZrO
2), its thickness can be 5 ~ 50nm.
The first low surface resistance transparency conducting layer 11, the second low surface resistance transparency conducting layer 14 and the 3rd low surface resistance transparency conducting layer 17 of the two silver-layer low-radiation glass 100 of above-mentioned high-performance are owing to having good electric conductivity and lower surface resistance, therefore can reduce radiance, improve the heat-proof quality of two silver-layer low-radiation glass 100, and can not have influence on two silver-layer low-radiation glass 100 light transmittances; Thereby guarantee that two silver-layer low-radiation glass 100, under the prerequisite with better light transmittance, also can improve heat-proof quality.
The embodiment of the present invention also provides the preparation method of the two silver-layer low-radiation glass of a kind of high-performance, and first it be to provide glass substrate 10.
Then, on glass substrate 10, deposit the first low surface resistance transparency conducting layer 11 by the mode of magnetron sputtering or chemical vapour deposition (CVD).Wherein, when the material adopting when the first low surface resistance transparency conducting layer 11 is ITO or AZO, can adopt the mode of direct current or medium frequency magnetron sputtering to deposit; When the material adopting when the first low surface resistance transparency conducting layer 11 is FTO, can adopt the mode of aumospheric pressure cvd (APCVD) to deposit.
Then the mode that, adds pulsed magnetron sputtering by direct current or direct current deposits the first silver layer 12 on this first low surface resistance transparency conducting layer 11;
Then the mode that, adds pulsed magnetron sputtering by direct current or direct current deposits the first protective layer 13 on this first silver layer 12;
Then, on this first protective layer 13, deposit the second low surface resistance transparency conducting layer 14 by the mode of magnetron sputtering or chemical vapour deposition (CVD).Wherein, when the material adopting when the second low surface resistance transparency conducting layer 14 is ITO or AZO, can adopt the mode of direct current or medium frequency magnetron sputtering to deposit; When the material adopting when the second low surface resistance transparency conducting layer 14 is FTO, can adopt the mode of aumospheric pressure cvd (APCVD) to deposit.
Then the mode that, adds pulsed magnetron sputtering by direct current or direct current deposits the second silver layer 15 on this second low surface resistance transparency conducting layer 14;
Then the mode that, adds pulsed magnetron sputtering by direct current or direct current deposits the second protective layer 16 on this second silver layer 15;
Then, on this second protective layer 16, deposit the 3rd low surface resistance transparency conducting layer 17 by the mode of magnetron sputtering or chemical vapour deposition (CVD).Wherein, when the material adopting when the 3rd low surface resistance transparency conducting layer 17 is ITO or AZO, can adopt the mode of direct current or medium frequency magnetron sputtering to deposit; When the material adopting when the 3rd low surface resistance transparency conducting layer 17 is FTO, can adopt the mode of aumospheric pressure cvd (APCVD) to deposit.
Finally, the mode that adds pulsed magnetron sputtering by direct current or direct current deposits top protective layer 18 on the 3rd low surface resistance transparency conducting layer 17.
Specific embodiment
Embodiment 1
The two silver-layer low-radiation glass of a kind of high-performance, film layer structure from glass substrate outwards successively: glass substrate/ITO/Ag/NiCr/ITO/Ag/NiCr/ITO/ZrO
2.Wherein, the thickness of the first low surface resistance transparency conducting layer (ITO) is 30nm; The thickness of the first silver layer (Ag) is 12nm; The thickness of the first protective layer (NiCr) is 1.5nm; The thickness of the second low surface resistance transparency conducting layer (ITO) is 60nm; The thickness of the second silver layer (Ag) is 14nm; The thickness of the second protective layer (NiCr) is 2nm; The thickness of the 3rd low surface resistance transparency conducting layer (ITO) is 40nm; Top protective layer (ZrO
2) thickness is 20nm.
Prepare the step of the two silver-layer low-radiation glass of above-mentioned high-performance successively:
(1) provide glass substrate, and cleaned up, dry up, be placed in vacuum sputtering district;
(2) on glass substrate, adopt the mode of magnetron sputtering to deposit ITO layer, target used is ITO flat target or rotary target, and power supply is dc source, and power is 10 ~ 100 kilowatts (KW), and process gas is the mist of argon gas and oxygen;
(3) on ITO layer, adopt the mode of magnetron sputtering to deposit Ag layer, target used is metal A g flat target, and power supply is dc source, and power is 1 ~ 10KW, and process gas is pure argon;
(4) on Ag layer, adopt the mode of magnetron sputtering to deposit NiCr layer, target used is NiCr alloy (mass ratio of Ni and Cr is Ni:Cr=80%:20%) flat target, and power supply is dc source, and power is 1 ~ 10KW, and process gas is pure argon;
(5) on NiCr layer, adopt the mode of magnetron sputtering to deposit ITO layer, target used is ITO flat target or rotary target, and power supply is dc source, and power is 10 ~ 100KW, and process gas is the mist of argon gas and oxygen;
(6) on ITO layer, adopt the mode of magnetron sputtering to deposit Ag layer, target used is metal A g flat target, and power supply is dc source, and power is 1 ~ 10KW, and process gas is pure argon;
(7) on Ag layer, adopt the mode of magnetron sputtering to deposit NiCr layer, target used is NiCr alloy (mass ratio of Ni and Cr is Ni:Cr=80%:20%) flat target, and power supply is dc source, and power is 1 ~ 10KW, and process gas is argon gas;
(8) on NiCr layer, adopt the mode of magnetron sputtering to deposit ITO layer, target used is ITO flat target or rotary target, and power supply is dc source, and power is 10 ~ 100KW, and process gas is the mist of argon gas and oxygen;
(9) on ITO layer, adopt the mode of magnetron sputtering to deposit ZrO
2layer, target used is metallic Z r flat target, and power supply is dc source, and power is 10 ~ 100KW, and process gas is the mist of argon gas and oxygen.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.