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CN103871954B - It is a kind of to optimize the method that shallow-trench isolation etches line width - Google Patents

It is a kind of to optimize the method that shallow-trench isolation etches line width Download PDF

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Publication number
CN103871954B
CN103871954B CN201410106820.9A CN201410106820A CN103871954B CN 103871954 B CN103871954 B CN 103871954B CN 201410106820 A CN201410106820 A CN 201410106820A CN 103871954 B CN103871954 B CN 103871954B
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China
Prior art keywords
shallow
line width
photoresist
trench isolation
angle
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CN201410106820.9A
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CN103871954A (en
Inventor
许进
束伟夫
任昱
张旭升
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

Optimize the method that shallow-trench isolation etches line width the invention discloses a kind of, comprise the following steps：The angle of the photoresist of different-shape under measurement different exposure；The relation set up between above-mentioned measurement result and shallow-trench isolation etch critical dimension, to define the etch period that shallow trench isolates critical size rate-determining steps.The present invention quantifies the angle of photoresist pattern by using the detection of optics line width measuring instrument, adjust the etch period of shallow groove isolation etching line width rate-determining steps, so as to the critical size of precise control shallow-trench isolation, change can only adjust roughly the shortcoming of shallow trench line width according to photoresist line width in the past, accomplish the critical size of the precise control shallow trench in the case where photoresist line width and angle change simultaneously, greatly improve shallow-trench isolation development efficiency and product yield.

Description

It is a kind of to optimize the method that shallow-trench isolation etches line width
Technical field
The present invention relates to semiconductor shallow trench isolation technology, more particularly to a kind of side for optimizing shallow-trench isolation etching line width Method.
Background technology
With the reduction of dimensions of semiconductor devices, the critical size of shallow trench isolation is on the electrical influence of device and final Yield is more and more sensitive.
In 65nm and following technology, to improve circuit performance, device density higher is obtained, use and develop Shallow ridges groove isolation technique, the critical size of groove has extremely important influence to device electric and yield：With semiconductor The reduction of device critical dimensions, the electrical influence of the size of shallow-trench isolation on device is more and more sensitive, and in some regions, when When size occurs very little change, mutation may be electrically produced, as shown in Figure 1；Yield or final of the size of groove to product Stability also have tremendous influence：When shallow trench size changes between certain limit region, the drastically decline of yield can be caused even To zero, cause product rejection, as shown in Figure 2.
Chinese patent (CN102983096A) discloses a kind of method for optimizing shallow-trench isolation etching technics, and the method passes through First adjustment etch period is to obtain the shallow trench of the different top sphering radian patterns under the different etching time, and carries out top circle Change arc measurement, the corresponding relation set up between shallow trench top sphering radian and etch period；Then according to the electrical of device Trend between specification and shallow trench top sphering radian, obtains the device of different electrically specifications actually corresponding shallow trench top Sphering radian；Finally, actually corresponding shallow trench top sphering radian and the shallow trench top of the device according to different electrically specifications Corresponding relation between portion's sphering radian and etch period, calculates and adjusts etch period, with precise control and stabilizing device Shallow trench top sphering radian.
Some following are there are while shallow ditch groove separation process technology reaches its maturity：
1) under the different exposure of working region, traditional method for measurement can only measure the line width at the top of photoresist, it is impossible to Measure the angle of photoresist, it is impossible to obtain the relation of the critical size of photoresist angle and shallow trench；
2) when product exposes, the reason such as offset in itself due to exposure bench, can occur the line width of photoresist and angle inclined Move；
3) during product is etched, due to the atmosphere of etching cavity, the change of the uncertain factor such as the drift of parameter is held Easily cause specification of the critical size at the top of groove away from setting；
4) in the case where litho machine and etching machine bench change simultaneously, the size that cannot judge shallow trench online can be caused to become Change root, online product cannot smoothly circulate, huge loss is brought to production；
Conventional SEM is the electronic display that applying electronic beam excites secondary electron imaging in sample surfaces scanning Micro mirror, existing can only measure line width, it is impossible to the drawbacks of measuring photoresist angle, thus cannot accurate feedback photoresist pattern reality Border information.
The content of the invention
In view of this, the method that shallow-trench isolation etches line width is optimized it is an object of the invention to provide a kind of, by using light Learn the angle of wire width measuring instrument detection limit workspace photoresist, the relation set up between angle and shallow trench line width, by adjusting Whole shallow-trench isolation etches the etch period of line width rate-determining steps, so that precise control shallow trench top line width, changes and can only in the past Line width according to photoresist regulates and controls the shortcoming that shallow trench isolates line width, greatly improves shallow trench isolation development efficiency and product is good The method of rate.
In order to achieve the above object, the purpose of the present invention is achieved through the following technical solutions：
It is a kind of to optimize the method that shallow-trench isolation etches line width, comprise the following steps：
The angle of the photoresist of different-shape under measurement different exposure；
The relation set up between above-mentioned measurement result and shallow-trench isolation etch critical dimension, it is crucial to define shallow trench isolation The etch period of size control step.
The method that above-mentioned optimization shallow-trench isolation etches line width, wherein, focusing when being exposed by adjusting workspace photoresist Obtain the photoresist pattern with different angles.
The method that above-mentioned optimization shallow-trench isolation etches line width, wherein, measured under different aggregations with optics line width measuring instrument The angle of the different photoresist patterns for obtaining.
The method that above-mentioned optimization shallow-trench isolation etches line width, wherein, the critical size after all wafer etchings is collected, set up Linewidth difference relational model corresponding with photoresist angle before and after etching, according to the relational model selective etching time so that in difference Identical shallow trench line width is obtained under photoresist angle.
Compared with the prior art, the beneficial effects of the present invention are：
Quantify the angle of photoresist pattern by using the detection of optics line width measuring instrument, adjust shallow groove isolation etching line width The etch period of rate-determining steps, so that the critical size of precise control shallow-trench isolation, change in the past can only be roughly according to photoresist Line width adjusts the shortcoming of shallow trench line width, accomplishes the precise control shallow ridges in the case where photoresist line width and angle change simultaneously The critical size of groove, greatly improves shallow-trench isolation development efficiency and product yield.
Brief description of the drawings
With reference to appended accompanying drawing, more fully to describe embodiments of the invention.However, appended accompanying drawing be merely to illustrate and Illustrate, and be not meant to limit the scope of the invention.
Fig. 1 is different line width respective devices saturation current schematic diagrames in the prior art；
Fig. 2 is line width respective devices yield schematic diagrames different in the prior art；
Fig. 3 be the present invention optimization shallow-trench isolation etching line width method in the identical shallow ridges line of rabbet joint is obtained under photoresist angle Schematic diagram wide；
Fig. 4 be the present invention optimization shallow-trench isolation etching line width method in obtain identical shallow under another photoresist angle Groove line width schematic diagram.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made Embodiment, belongs to the scope of protection of the invention.
It should be noted that in the case where not conflicting, the embodiment in the present invention and the feature in embodiment can phases Mutually combination.
The method that present invention optimization shallow-trench isolation etches line width, measures the photoetching of different-shape under different exposure first The angle of glue, then sets up the relation between above-mentioned measurement result and shallow-trench isolation etch critical dimension, with define shallow trench every From the etch period of critical size rate-determining steps.
Specifically, in existing process flow, adjust focusing when workspace photoresist exposes to obtain with different angles The photoresist pattern of degree；With optics line width measuring instrument, the angle of the different photoresist patterns obtained under the different focusing of accurate measurement Degree, the wafer to different photoresist patterns is performed etching using same Zhi Caidan, and collects the crucial chi after all wafer etchings It is very little.Optics line width measuring instrument, be by analyzing the information contained by the curve of spectrum reflected from sample surfaces for obtaining of absorbing, To reach the purpose of measurement.Due to optical special nature, its line width that can not only measure sample, can also measure thickness and Pattern etc., there is very powerful function to angular surveying.
Linewidth difference relational model corresponding with photoresist angle before and after etching is set up, it is following referring to shown in Fig. 3, specifically including Formula：
CD0bias=CD0AE1-CDAD1
Wherein, CD0AE1It is angle angle0Critical size after etching, CDAD1It is the critical size before etching, CD0biasFor Angle angle0Critical size before and after etching is poor；
CD1bias=CD1AE1-CDAD1
Wherein, CD1AE1It is angle angle1Critical size after etching, CDAD1It is the critical size before etching, CD1biasFor Angle angle1Critical size before and after etching is poor；
CD0bias=2*TK2/tg (angle0)
CD1bias=2*TK2/tg (angle1)
Wherein, tg (angle0) and tg (angle1) tan of different photoresist angles is respectively, TK2 is BARC bottoms The thickness of portion's ARC (Bottom Anti-Reflective Coating).
According to the relational model set up, suitable etch period is selected, obtain phase under different photoresist angles so as to reach With the purpose of shallow trench line width, precise control simultaneously stablizes the critical size of online product, following referring to shown in Fig. 4, specifically including Formula：
CDAE1=CDAD1+CD0bias+d*t0=CDAD1+CD1bias+d*t1
Wherein, t0And t1Respectively correspond to angle0And angle1The trim times, d be trim speed.
The present invention quantifies the angle of photoresist pattern by using the detection of optics line width measuring instrument, and adjustment shallow trench isolation is carved The time of erosion, so that the critical size of precise control shallow trench isolation, changing can only adjust roughly according to photoresist line width in the past The shortcoming of whole shallow trench line width, accomplishes the key of the precise control shallow trench in the case where photoresist line width and angle change simultaneously Size, greatly improves shallow-trench isolation development efficiency and product yield.
Specific embodiment of the invention has been described in detail above, but the present invention is not restricted to tool described above Body embodiment, it is intended only as example.To those skilled in the art, any equivalent modifications and replacement are also all in the present invention Category among.Therefore, done without departing from the spirit and scope of the invention impartial conversion and modification, should all cover In the scope of the present invention.

Claims (2)

1. it is a kind of to optimize the method that shallow-trench isolation etches line width, it is characterised in that to comprise the following steps：
The angle of the photoresist of different-shape under measurement different exposure；
The relation set up between above-mentioned measurement result and shallow-trench isolation etch critical dimension, to define shallow trench isolation critical size The etch period of rate-determining steps；
The critical size after all wafer etchings is collected, linewidth difference relation mould corresponding with photoresist angle before and after etching is set up Type, according to the relational model selective etching time so that identical shallow trench line width is obtained under different photoresist angles；
Wherein, focusing when being exposed by adjusting workspace photoresist obtains the photoresist pattern with different angles；The quarter Linewidth difference is relevant with the thickness of the bottom antireflective coating of the wafer before and after erosion.
2. the method that optimization shallow-trench isolation etches line width according to claim 1, it is characterised in that use optics wire width measuring Instrument measures the angle of the different photoresist patterns obtained under different aggregations.
CN201410106820.9A 2014-03-20 2014-03-20 It is a kind of to optimize the method that shallow-trench isolation etches line width Active CN103871954B (en)

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CN104362085B (en) * 2014-09-30 2017-11-14 上海华力微电子有限公司 It is a kind of to adjust the electrical polycrystalline silicon etching method of high tension apparatus
CN104900510B (en) * 2015-06-29 2018-01-26 上海华力微电子有限公司 Etch mapping relations model and the method for controlling shallow-trench isolation etch critical dimension
CN106252253B (en) * 2016-08-31 2019-02-01 上海华力微电子有限公司 A kind of method of test active area top round and smooth degree
TWI658349B (en) * 2017-06-27 2019-05-01 亞智科技股份有限公司 Process monitoring method and process monitoring system
CN108091560B (en) * 2017-12-07 2020-04-10 上海华力微电子有限公司 Method for optimizing shallow slot isolation etching morphology under different light transmittances
CN109065465B (en) * 2018-07-13 2021-01-29 上海华力集成电路制造有限公司 Method for measuring height stability of shallow trench isolation step
CN117742067B (en) * 2023-12-25 2025-02-25 广州新锐光掩模科技有限公司 Phase-shift photomask preparation method, device and photolithography method

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US6808942B1 (en) * 2003-05-23 2004-10-26 Texas Instruments Incorporated Method for controlling a critical dimension (CD) in an etch process
CN102955378A (en) * 2012-11-12 2013-03-06 上海集成电路研发中心有限公司 Morphology characterization method for photoresist
CN102983096A (en) * 2012-11-29 2013-03-20 上海华力微电子有限公司 Method for optimizing shallow slot isolating etching process

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US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control

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US6808942B1 (en) * 2003-05-23 2004-10-26 Texas Instruments Incorporated Method for controlling a critical dimension (CD) in an etch process
CN102955378A (en) * 2012-11-12 2013-03-06 上海集成电路研发中心有限公司 Morphology characterization method for photoresist
CN102983096A (en) * 2012-11-29 2013-03-20 上海华力微电子有限公司 Method for optimizing shallow slot isolating etching process

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