CN103862584B - The evolution technique of monocrystalline silicon round rod used for solar batteries and application - Google Patents
The evolution technique of monocrystalline silicon round rod used for solar batteries and application Download PDFInfo
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- CN103862584B CN103862584B CN201410133850.9A CN201410133850A CN103862584B CN 103862584 B CN103862584 B CN 103862584B CN 201410133850 A CN201410133850 A CN 201410133850A CN 103862584 B CN103862584 B CN 103862584B
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims abstract description 12
- 210000002268 wool Anatomy 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 17
- 238000009412 basement excavation Methods 0.000 claims description 12
- 229920000297 Rayon Polymers 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 abstract description 6
- 150000003376 silicon Chemical class 0.000 abstract description 3
- 239000002585 base Substances 0.000 description 20
- 230000005540 biological transmission Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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Abstract
The invention discloses the evolution technique of monocrystalline silicon round rod used for solar batteries, first the circumferential radian between silicon rod crest line with phase vincial faces holder crest line is adjusted to 2 π/18, π/9 ~ 5, then by monocrystalline silicon round rod evolution.The present invention also provides the production technology of monocrystaline silicon solar cell sheet, comprise the printing of the preparation of monocrystalline silicon cutting blade, surface wool manufacturing and gate electrode line, described monocrystalline silicon cutting blade is the accurate square silicon wafer of being cut into slices by single crystal silicon square rods Linear cut, and described single crystal silicon square rods is obtained by above-mentioned evolution technique by monocrystalline silicon round rod.The present invention can obtain the monocrystalline silicon cutting blade that crystal orientation, four edges is <110> ± 5 °, the matte pyramid structure base formed after the conventional making herbs into wool of this silicon chip can be used for transmitting light induced electron, and light induced electron can not be made on this pyramid structure base to produce path lengthens.
Description
Technical field
The present invention relates to the evolution technique of monocrystalline silicon round rod used for solar batteries, and apply the monocrystaline silicon solar cell sheet production technology of this evolution technique.
Background technology
Current solar cell monocrystalline silicon piece mainly adopts the monocrystalline silicon round rod in Grown by CZ Method <100> crystal orientation as raw material, first the silicon rod crest line (growth crest line) on monocrystalline silicon round rod is alignd one by one with the crystalline substance holder crest line in Squarer crystal support, again to monocrystalline silicon round rod evolution, pole is cut into the accurate square cylinder (single crystal silicon square rods) that cross section is corner band circular arc, then round as a ball through spheronizator emery wheel, the square rod blank making original growth potential uneven obtains homogeneous size, Linear cut section is carried out with this square rod, the monocrystalline silicon piece for the production of battery can be obtained.According to national standard " monocrystalline silicon cutting blade used for solar batteries " (standard No.: GB/T 26071-2010), crystal orientation, this kind of silicon chip four edges is <100> ± 2 °.
After carrying out alkali making herbs into wool to this conventional single silicon chip, can form pyramid shape (positive rectangular pyramid) suede structure at silicon chip surface, the base of pyramid structure and silicon chip edge are into about 45 degree of angles, and the gate electrode line also namely printed with routine is into about 45 degree of angles.(gate electrode line of conventional printing is parallel with silicon chip edge or vertical.) this relative position makes light induced electron need longer transmission range could arrive grid line place when silicon chip surface transmits, and causes the prolongation of transmission range.
Summary of the invention
The object of the present invention is to provide the evolution technique of monocrystalline silicon round rod used for solar batteries, and apply the monocrystaline silicon solar cell sheet production technology of this evolution technique, it is <100> ± 3 ° that evolution technique of the present invention can obtain end face crystal orientation, crystal orientation, four sides is the single crystal silicon square rods of <110> ± 5 °, and then by cutting into slices this conventional means and to obtain surface orientation be <100> ± 3 ° to single crystal silicon square rods Linear cut, crystal orientation, four edges is the accurate square silicon wafer of <110> ± 5 °, a pair base of the matte pyramid structure formed after the conventional making herbs into wool of this accurate square silicon wafer is substantially vertical with silicon chip edge, also just substantially vertical with the gate electrode line that routine is printed, this can be used for transmitting light induced electron to pyramid structure base, and light induced electron can not be made on this pyramid structure base to produce path lengthens, relative to prior art, shorten the transmission range of light induced electron at silicon chip surface, improve the absorption quantity of gate electrode line at the raw electronics of unit interval interior focusing, namely the collection efficiency of electronics is effectively improved, and then raising battery conversion efficiency, when not affecting battery conversion efficiency, relatively can also reduce moire grids density, and then reducing costs.
For achieving the above object, the invention provides the evolution technique of monocrystalline silicon round rod used for solar batteries, in described monocrystalline silicon round rod evolution process, first the circumferential radian between silicon rod crest line and phase vincial faces holder crest line is adjusted to 2 π/18, π/9 ~ 5 by (circumferential position that adjustment monocrystalline silicon round rod holds in the palm with crystalline substance), again by monocrystalline silicon round rod evolution, obtained single crystal silicon square rods; The crystal orientation of described monocrystalline silicon round rod is <100> ± 3 °.(described silicon rod crest line is the growth crest line of monocrystalline silicon round rod; Described crystalline substance holder crest line is the crest line for aiming at one by one with silicon rod crest line that Squarer crystal support is arranged.）
Preferably, the evolution technique of described monocrystalline silicon round rod used for solar batteries comprises the steps:
1) monocrystalline silicon round rod is vertically placed in Squarer crystal support;
2) the silicon rod crest line of monocrystalline silicon round rod is aimed at one by one with the crystalline substance holder crest line of Squarer crystal support, then monocrystalline silicon round rod is rotated 2 π/18, π/9 ~ 5 relative to brilliant holder, then with viscose, monocrystalline silicon round rod is bonded in Squarer crystal support;
3) crystalline substance holder is fixed on excavation machine workbench, starts excavation machine and monocrystalline silicon round rod is cut into single crystal silicon square rods.
Preferably, the circumferential radian between described silicon rod crest line with phase vincial faces holder crest line is adjusted to π/4.
Preferably, the evolution technique of described monocrystalline silicon round rod used for solar batteries comprises the steps:
1) monocrystalline silicon round rod is vertically placed in Squarer crystal support;
2) the silicon rod crest line of monocrystalline silicon round rod is aimed at one by one with the mark line of Squarer crystal support, then with viscose, monocrystalline silicon round rod is bonded in Squarer crystal support; Described mark line is positioned on the outer peripheral face of brilliant holder, and and crystalline substance holder crest line interval arrange; Described mark line is parallel with two that are adjacent brilliant holder crest lines, and equal with the spacing of these two phase vincial faces holder crest lines;
3) crystalline substance holder is fixed on excavation machine workbench, starts excavation machine and monocrystalline silicon round rod is cut into single crystal silicon square rods.
Preferably, described monocrystalline silicon round rod is the silicon single crystal rod in the <100> crystal orientation of Grown by CZ Method.
The present invention also provides the production technology of monocrystaline silicon solar cell sheet, comprise the printing of the preparation of monocrystalline silicon cutting blade, surface wool manufacturing and gate electrode line, described monocrystalline silicon cutting blade is the accurate square silicon wafer of being cut into slices by single crystal silicon square rods Linear cut, and described single crystal silicon square rods is obtained by above-mentioned evolution technique by monocrystalline silicon round rod; Gate electrode line and the accurate square silicon wafer sides aligned parallel or vertical of described printing.(described surface wool manufacturing is used for the matte at accurate square silicon wafer Surface Creation with pyramid structure.）
As everyone knows, after light induced electron arrives silicon chip surface, collected by gate electrode line, in the process that light induced electron is advanced along silicon chip surface to gate electrode line, the pyramid structure of silicon chip surface may be run into, and advance along the surface of this pyramid structure and/or edge, and then cross this pyramid structure.Obviously, regardless of the positive pyramid structure that this pyramid structure is silicon chip surface projection, or the inverted pyramid structure of silicon chip surface depression, light induced electron is when crossing these pyramid structures, advance compared in plane, generally all relatively can extend the travel distance arriving gate electrode line.The path lengthens caused to reduce light induced electron to be subject to crossing pyramid structure, a kind of feasible way allows light induced electron have an opportunity to advance on pyramid structure base, and such light induced electron is advanced in plane exactly.But another needs the problem considered to be that light induced electron is when plane is advanced, and when only having its direct of travel and gate electrode line basic vertical, light induced electron is just in the shortest path towards gate electrode line; All can there is larger angle because of its path direction and gate electrode line in other paths, and become longer compared to above-mentioned shortest path.Therefore the path lengthens caused to reduce light induced electron to be subject to crossing pyramid structure, allow light induced electron have an opportunity while advancing in pyramid structure base, also will take into full account the relative position relation of pyramid structure base and gate electrode line.And in prior art, be subject to the thought binding of common process, those skilled in the art had not both had purpose to go research and adjustment light induced electron to affect caused path lengthens when silicon chip surface is advanced by pyramid structure, do not have purpose to go the pros and cons studied and adjustment light induced electron is advanced along pyramid structure base, more do not have purpose to remove to study and adjust the relative position relation of pyramid structure base and gate electrode line yet.
Common process gained single crystal silicon square rods, crystal orientation, four sides is <100>, this single crystal silicon square rods to be cut into slices this conventional means and the crystal orientation, four edges obtaining monocrystalline silicon piece is <100> by Linear cut, after conventional making herbs into wool is carried out to this silicon chip, at the base of pyramid structure that silicon chip surface is formed and silicon chip edge into about 45 degree of angles, the gate electrode line also printed with routine is into about 45 degree of angles.(gate electrode line of conventional printing is parallel with silicon chip edge or vertical.) present invention process gained single crystal silicon square rods, end face crystal orientation is <100> ± 3 °, crystal orientation, four sides is <110> ± 5, single crystal silicon square rods of the present invention to be cut into slices this conventional means and obtain accurate square silicon wafer by Linear cut, <110> ± 5 °, crystal orientation, four edges, but not traditional <100>, after this silicon chip carries out conventional making herbs into wool (alkali making herbs into wool), the base of each pyramid structure becomes 0-10 degree angle or 80-90 degree angle with silicon chip edge, also just 0-10 degree angle or 80-90 degree angle is become with the gate electrode line of routine printing, namely there is one group of opposite side substantially vertical with gate electrode line in limit, each pyramid structure bottom surface four.
There is one group of opposite side substantially vertical with gate electrode line in limit, the present invention's each pyramid structure bottom surface four, light induced electron is through pyramid structure, just there is more multimachine to advance along the pyramid structure base substantially vertical with gate electrode line, such light induced electron, while plane is advanced, is also in towards on the shortest path of gate electrode line.And in prior art the base of pyramid structure and gate electrode line into about 45 degree of angles, light induced electron is through pyramid structure, generally all to cross these pyramid structures up and down, advance in plane compared to light induced electron, relatively extend the travel distance arriving gate electrode line; And because the base of pyramid structure in prior art and gate electrode line are into about 45 degree of angles, the base of these pyramid structures also cannot form the shortest path that plane is advanced.
In sum, the present invention creatively have adjusted the relative position relation of pyramid structure base and conventional electrodes grid line, makes light induced electron have more multimachine can along the pyramid structure base substantially vertical with gate electrode line---and this does not need the shortest path crossing pyramid structure to advance.Compared with prior art, the present invention can effectively utilize pyramid structure base to transmit light induced electron, and light induced electron can not be made on this pyramid structure base to produce path lengthens, objectively shorten the actual transmissions distance that light induced electron arrives gate electrode line, thus improve the collection efficiency of gate electrode line to light induced electron, be conducive to improving battery efficiency further.
In addition, the present invention, by adjusting the relative position relation on pyramid structure base and gate electrode line, also just have adjusted the relative position relation of each pyramid structure and gate electrode line on the whole.With regard to the general impacts of path---the general impacts of described path refer to: need to cross pyramidal all light induced electrons, the path be extended owing to crossing pyramid generally.Path of the present invention general impacts are much smaller than prior art, therefore relative to prior art, the present invention shortens the actual transmissions distance that light induced electron arrives gate electrode line especially on the whole, further increases the collection efficiency of gate electrode line to light induced electron, is also more conducive to improving battery efficiency.
And, light induced electron can also being shortened in the present invention and arrive on the basis of the actual transmissions distance of gate electrode line, the grid line structure design more optimized, as when not affecting battery conversion efficiency, moire grids density can be reduced, and then reducing grid line cost.
Accompanying drawing explanation
Fig. 1 is silicon single crystal rod schematic diagram;
Fig. 2 is Squarer crystal support schematic diagram;
Fig. 3 is Squarer crystal support schematic cross-section.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is further described.Following examples only for technical scheme of the present invention is clearly described, and can not limit the scope of the invention with this.
The technical scheme that the present invention specifically implements is:
The invention provides the evolution technique of monocrystalline silicon round rod used for solar batteries, in described monocrystalline silicon round rod evolution process, first the circumferential radian between silicon rod crest line and phase vincial faces holder crest line is adjusted to 2 π/18, π/9 ~ 5 by (circumferential position that adjustment monocrystalline silicon round rod holds in the palm with crystalline substance), again by monocrystalline silicon round rod evolution, obtained single crystal silicon square rods; Described monocrystalline silicon round rod is the silicon single crystal rod in ° (being preferably <100>) crystal orientation, <100> ± 3 of Grown by CZ Method.(described silicon rod crest line is the growth crest line of monocrystalline silicon round rod; Described crystalline substance holder crest line is the crest line for aiming at one by one with silicon rod crest line that Squarer crystal support is arranged.）
Circumferential radian between adjustment silicon rod crest line with phase vincial faces holder crest line also can be realized by multiple method monocrystalline silicon round rod evolution.
One can system of selection as follows:
(1) monocrystalline silicon round rod in Fig. 12 is vertically placed in Fig. 2 Squarer crystal support 4;
(2) the silicon rod crest line 1 of monocrystalline silicon round rod 2 is aimed at one by one with the crystalline substance holder crest line 3 of Squarer crystal support 4, again monocrystalline silicon round rod 2 is rotated 2 π/9 ~ 5 π/18(relative to brilliant holder 4 and is preferably π/4), then with viscose, monocrystalline silicon round rod 2 is bonded in Squarer crystal support 4;
(3) crystalline substance holder 4 is fixed on excavation machine workbench, adds magnetic, start excavation machine and monocrystalline silicon round rod is cut into single crystal silicon square rods.
Another kind can system of selection as follows: (the circumferential radian between described silicon rod crest line with phase vincial faces holder crest line is adjusted to π/4)
(1) monocrystalline silicon round rod in Fig. 12 is vertically placed in Fig. 2 Squarer crystal support 4;
(2) the silicon rod crest line 1 of monocrystalline silicon round rod 2 is aimed at one by one with the mark line 5 of Squarer crystal support 4, then with viscose, monocrystalline silicon round rod 2 is bonded in Squarer crystal support 4; As shown in Figure 2 and Figure 3, described mark line 5 is positioned on the outer peripheral face of brilliant holder 4, and with the spaced setting of crystalline substance holder crest line 3; Described mark line 5 is parallel with two that are adjacent brilliant holder crest lines 3, and equal with the spacing of these two phase vincial faces holder crest lines 3;
(3) crystalline substance holder 4 is fixed on excavation machine workbench, adds magnetic, start excavation machine and monocrystalline silicon round rod is cut into single crystal silicon square rods.
The single crystal silicon square rods that above-mentioned monocrystalline silicon round rod evolution is obtained, end face crystal orientation is <100> ± 3 °, and crystal orientation, four sides is <110> ± 5 °.
The present invention also provides the production technology of monocrystaline silicon solar cell sheet, comprise the printing of the preparation of monocrystalline silicon cutting blade, surface wool manufacturing and gate electrode line, described monocrystalline silicon cutting blade is the accurate square silicon wafer of being cut into slices by single crystal silicon square rods Linear cut, and described single crystal silicon square rods is obtained by above-mentioned evolution technique by monocrystalline silicon round rod; Gate electrode line and the accurate square silicon wafer sides aligned parallel or vertical of described printing.(described surface wool manufacturing is used for the matte at accurate square silicon wafer Surface Creation with pyramid structure.）
Above-mentioned accurate square silicon wafer (monocrystalline silicon cutting blade) of being cut into slices by single crystal silicon square rods Linear cut, surface orientation is <100> ± 3 °, and crystal orientation, four edges is <110> ± 5 °.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the technology of the present invention principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. the evolution technique of monocrystalline silicon round rod used for solar batteries, it is characterized in that, in described monocrystalline silicon round rod evolution process, first the circumferential radian between silicon rod crest line with phase vincial faces holder crest line is adjusted to 2 π/18, π/9 ~ 5, again by monocrystalline silicon round rod evolution, obtained single crystal silicon square rods; The crystal orientation of described monocrystalline silicon round rod is <100> ± 3 °.
2. the evolution technique of monocrystalline silicon round rod used for solar batteries according to claim 1, is characterized in that, comprise the steps:
1) monocrystalline silicon round rod is vertically placed in Squarer crystal support;
2) the silicon rod crest line of monocrystalline silicon round rod is aimed at one by one with the crystalline substance holder crest line of Squarer crystal support, then monocrystalline silicon round rod is rotated 2 π/18, π/9 ~ 5 relative to brilliant holder, then with viscose, monocrystalline silicon round rod is bonded in Squarer crystal support;
3) crystalline substance holder is fixed on excavation machine workbench, starts excavation machine and monocrystalline silicon round rod is cut into single crystal silicon square rods.
3. the evolution technique of monocrystalline silicon round rod used for solar batteries according to claim 1, is characterized in that, the circumferential radian between described silicon rod crest line with phase vincial faces holder crest line is adjusted to π/4.
4. the evolution technique of monocrystalline silicon round rod used for solar batteries according to claim 3, is characterized in that, comprise the steps:
1) monocrystalline silicon round rod is vertically placed in Squarer crystal support;
2) the silicon rod crest line of monocrystalline silicon round rod is aimed at one by one with the mark line of Squarer crystal support, then with viscose, monocrystalline silicon round rod is bonded in Squarer crystal support; Described mark line is positioned on the outer peripheral face of brilliant holder, and and crystalline substance holder crest line interval arrange; Described mark line is parallel with two that are adjacent brilliant holder crest lines, and equal with the spacing of these two phase vincial faces holder crest lines;
3) crystalline substance holder is fixed on excavation machine workbench, starts excavation machine and monocrystalline silicon round rod is cut into single crystal silicon square rods.
5. the evolution technique of monocrystalline silicon round rod used for solar batteries according to claim 1, is characterized in that, described monocrystalline silicon round rod is the silicon single crystal rod in the <100> crystal orientation of Grown by CZ Method.
6. the production technology of a monocrystaline silicon solar cell sheet, comprise the printing of the preparation of monocrystalline silicon cutting blade, surface wool manufacturing and gate electrode line, described monocrystalline silicon cutting blade is the accurate square silicon wafer of being cut into slices by single crystal silicon square rods Linear cut, it is characterized in that, described single crystal silicon square rods is obtained by evolution technique any one of claim 1-5 by monocrystalline silicon round rod; Gate electrode line and the accurate square silicon wafer sides aligned parallel or vertical of described printing.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101537666A (en) * | 2009-03-09 | 2009-09-23 | 新乡市神舟晶体科技发展有限公司 | Processing method of seed crystal with big drift angle |
| EP2146384A1 (en) * | 2001-10-09 | 2010-01-20 | Sumitomo Electric Industries, Ltd. | Method of making a laser diode |
| CN102294757A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for splicing short mono-crystal rods cut by using diamond wire |
| DE102011076860A1 (en) * | 2011-06-01 | 2012-12-06 | Forschungsverbund Berlin E.V. | Directional crystallization of silicon ingots, comprises charging crucible of crystallization system containing material to be processed, melting material, and setting stereometric temperature field with planar isothermal surfaces in melt |
| CN102828231A (en) * | 2012-09-13 | 2012-12-19 | 英利集团有限公司 | Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11198016A (en) * | 1998-01-14 | 1999-07-27 | Shin Etsu Handotai Co Ltd | Work cutting fluid, work cutting agent and work cutting method |
-
2014
- 2014-04-04 CN CN201410133850.9A patent/CN103862584B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2146384A1 (en) * | 2001-10-09 | 2010-01-20 | Sumitomo Electric Industries, Ltd. | Method of making a laser diode |
| CN101537666A (en) * | 2009-03-09 | 2009-09-23 | 新乡市神舟晶体科技发展有限公司 | Processing method of seed crystal with big drift angle |
| DE102011076860A1 (en) * | 2011-06-01 | 2012-12-06 | Forschungsverbund Berlin E.V. | Directional crystallization of silicon ingots, comprises charging crucible of crystallization system containing material to be processed, melting material, and setting stereometric temperature field with planar isothermal surfaces in melt |
| CN102294757A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for splicing short mono-crystal rods cut by using diamond wire |
| CN102828231A (en) * | 2012-09-13 | 2012-12-19 | 英利集团有限公司 | Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot |
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