CN103855321A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
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- CN103855321A CN103855321A CN201210501401.6A CN201210501401A CN103855321A CN 103855321 A CN103855321 A CN 103855321A CN 201210501401 A CN201210501401 A CN 201210501401A CN 103855321 A CN103855321 A CN 103855321A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 44
- 239000010410 layer Substances 0.000 claims abstract description 288
- 239000000463 material Substances 0.000 claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 150000004767 nitrides Chemical class 0.000 claims abstract description 34
- 238000004806 packaging method and process Methods 0.000 claims abstract description 24
- 239000002346 layers by function Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims description 63
- 239000011241 protective layer Substances 0.000 claims description 54
- 238000005401 electroluminescence Methods 0.000 claims description 49
- 229910052757 nitrogen Inorganic materials 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 27
- 238000006116 polymerization reaction Methods 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 238000007738 vacuum evaporation Methods 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 16
- -1 anode Substances 0.000 claims description 16
- 239000004033 plastic Substances 0.000 claims description 16
- 229920003023 plastic Polymers 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
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- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
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- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 claims description 8
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical group [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 8
- 239000000292 calcium oxide Substances 0.000 claims description 8
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 8
- 229910017083 AlN Inorganic materials 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052582 BN Inorganic materials 0.000 claims description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 7
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- 239000005083 Zinc sulfide Substances 0.000 claims description 7
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical group [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 claims description 7
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 7
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 7
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000113 methacrylic resin Substances 0.000 claims description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 7
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 7
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 7
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 7
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 5
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- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 3
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- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical group C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 3
- TZRXHJWUDPFEEY-UHFFFAOYSA-N Pentaerythritol Tetranitrate Chemical compound [O-][N+](=O)OCC(CO[N+]([O-])=O)(CO[N+]([O-])=O)CO[N+]([O-])=O TZRXHJWUDPFEEY-UHFFFAOYSA-N 0.000 description 3
- 229910052792 caesium Inorganic materials 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 3
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- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Provided in the invention is an organic light-emitting device comprising a substrate, an anode, a functional layer, a cathode, a packaging layer, and a packaging cover. The substrate, the anode, the functional layer, the cathode, the packaging layer, and the packaging cover are successively laminated. The substrate and the packaging cover form an enclosed space; and the anode, the functional layer, the cathode, and the packaging layer are accommodated into the enclosed space. The packaging layer successively includes a protection layer, an oxygen-nitrogen compound film, an organic blocking layer, a moisture absorbing layer, and a cooling layer; and the oxygen-nitrogen compound film is an oxide film doped with nitride. In addition, the invention also provides a preparation method of the organic light-emitting device. With the method, erosion on the organic light-emitting device by moisture and oxygen can be effectively reduced, so that the device organic functional material and the electrode can be effectively protected and thus the service life of the organic light-emitting device can be obviously prolonged. The method is especially suitable for packaging of a flexible organic light-emitting device.
Description
Technical field
The present invention relates to electronic device association area, relate in particular to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) is a kind of current mode light emitting semiconductor device based on organic material.Its typical structure is that the luminous organic material of preparing tens nanometer thickness on ito glass is made luminescent layer, and there is the metal electrode of low work function luminescent layer top.In the time being added with voltage on electrode, luminescent layer just produces light radiation.
OLED device have active illuminating, luminous efficiency high, low in energy consumption, light, thin, without advantages such as angle limitations, thought to be most likely at by insider the device of new generation that occupies dominance on following illumination and display device market.As a brand-new illumination and Display Technique, the ten years development in the past of OLED technology is swift and violent, has obtained huge achievement.Throw light on because the whole world is increasing and show that producer drops into research and development one after another, having promoted greatly the industrialization process of OLED, making the growth rate of OLED industry surprising, having arrived the eve of scale of mass production at present.
In conventional art, adopt glass cover or crown cap to encapsulate, ultraviolet polymerization resin sealing for its edge, but the glass cover using in this method or crown cap volume are often larger, increased the weight of device, and the method can not be applied to the give out light encapsulation of device of flexible organic electroluminescence.
Summary of the invention
For overcoming the defect of above-mentioned prior art, the invention provides a kind of organic electroluminescence device and preparation method thereof.This organic electroluminescence device can reduce steam, the erosion of oxygen isoreactivity material to organic electroluminescence device effectively, and organic functional material and the electrode of protection organic electroluminescence device exempt from destruction, and the life-span of device is increased significantly.The inventive method is applicable to the organic electroluminescence device that encapsulation is prepared with conducting glass substrate.The inventive method is particularly useful for encapsulating flexible organic electroluminescent device.
On the one hand, the invention provides a kind of organic electroluminescence device,
Comprise the substrate, anode, functional layer, negative electrode, encapsulated layer and the cap that stack gradually, substrate and cap form enclosure space, anode, functional layer, negative electrode, encapsulated layer are contained in this enclosure space, and described encapsulated layer comprises protective layer, oxynitrides film, organic barrier layer, moisture absorbed layer and heat dissipating layer successively;
Described oxynitrides film is the oxidation film doped with nitride, wherein, described oxide material is silicon dioxide, alchlor, zirconium dioxide, hafnium oxide or tantalum pentoxide, described nitride material is silicon nitride, aluminium nitride, boron nitride, silicon nitride, tantalum nitride or titanium nitride, and the mass ratio of described oxide and described nitride is 1:4～2:3.
Preferably, the thickness of described oxynitrides film is 80nm～150nm.
Preferably, the material of described protective layer is CuPc, N, N '-(1-naphthyl)-N, and N '-diphenyl-4,4 '-benzidine, 8-hydroxyquinoline aluminum, silica, magnesium fluoride or zinc sulphide, the thickness of protective layer is 200nm～300nm;
The material on described organic barrier layer is polytetrafluoroethylene, methacrylic resin or cycloaliphatic epoxy resin, and the thickness on described organic barrier layer is 1 μ m～1.5 μ m.
Preferably, the material of described moisture absorbed layer is calcium oxide, barium monoxide, strontium oxide strontia or magnesium oxide, and the thickness of described moisture absorbed layer is 100nm～200nm;
The material of described heat dissipating layer is aluminium, silver, copper or their composition, and thickness is 200nm～500nm; And
Described cap is sheet metal, and the material of sheet metal is silver, aluminium or copper.
Preferably, described oxynitrides film and the alternately laminated setting in described organic barrier layer, the stacked number of plies is more than or equal to three layers.
The present invention provides a kind of preparation method of organic electroluminescence device on the other hand, comprises the following steps:
On clean glass substrate or organic film substrate, be prepared with the anode of organic electroluminescence devices; Adopt the method for vacuum evaporation on anode conducting substrate, to prepare successively functional layer, negative electrode and encapsulated layer, adopt ultraviolet light polymerization mode that cap is encapsulated, make described substrate and described cap form enclosure space;
The preparation of described encapsulated layer comprises and first on negative electrode, adopts the mode of vacuum evaporation to prepare described protective layer;
On described protective layer, adopt magnetron sputtering to spatter altogether the described oxynitrides film of preparation; wherein; described oxide material is silicon dioxide, alchlor, zirconium dioxide, hafnium oxide or tantalum pentoxide; described nitride material is silicon nitride, aluminium nitride, boron nitride, silicon nitride, tantalum nitride or titanium nitride; described magnetron sputtering condition is: adopt three target magnetic control sputtering depositing systems, it is 1 × 10 that base vacuum degree is set
-5pa～1 × 10
-3pa, thicknesses of layers is set to 80nm～150nm, using the mass ratio of described oxide and described nitride be 1:4～2:3 as target, be under 5nm/min～40nm/min condition, to carry out magnetron sputtering to obtain oxynitrides film at sputter rate;
Then on described oxynitrides film, adopt the technique of first spin coating post-exposure to prepare described organic barrier layer, the technical process of described first spin coating post-exposure is, by described organic barrier material spin coating, be then 200nm～400nm ultraviolet light polymerization with wavelength, light intensity is 10mW/cm
2～15mW/cm
2, time for exposure 200s～300s;
Then on described organic barrier layer, adopt sputter mode to prepare described moisture absorbed layer, fin described in vacuum evaporation on described moisture absorbed layer;
Finally adopt packaging plastic that sheet metal encapsulation is formed to cap, make described substrate and described cap form confined space, described anode, functional layer, negative electrode and encapsulated layer are contained in this enclosure space.
Preferably, the thickness of described oxynitrides film is 80nm～150nm.
Preferably, the material of described protective layer is CuPc, N, N '-(1-naphthyl)-N, and N '-diphenyl-4,4 '-benzidine, 8-hydroxyquinoline aluminum, silica, magnesium fluoride or zinc sulphide, the thickness of protective layer is 200nm～300nm;
The material of described organic gear layer is polytetrafluoroethylene, methacrylic resin or cycloaliphatic epoxy resin, and the thickness of described organic gear layer is 1 μ m～1.5 μ m.
Preferably, the material of described moisture absorbed layer is calcium oxide, barium monoxide, strontium oxide strontia or magnesium oxide, and the thickness of described moisture absorbed layer is 100nm～200nm.
Preferably, the material of described heat dissipating layer is aluminium, silver, copper or their composition, and the thickness of described heat dissipating layer is 200nm～500nm.
Preferably, described cap is sheet metal, and the material of sheet metal is silver, aluminium or copper.
Preferably, repeat to prepare the preparation technology on described oxynitrides film and organic barrier layer, make the stacked setting of described oxynitrides film and organic barrier layer, the alternately laminated number of plies is for being more than or equal to 3 layers.
The invention provides a kind of organic electroluminescence device and preparation method thereof and there is following beneficial effect:
Organic electroluminescence device of the present invention can reduce outside water, the erosion of oxygen isoreactivity material to organic electroluminescence device effectively, thereby device organic functional material and electrode are formed to effective protection, improves significantly the life-span of organic electroluminescence device; Make water resistance (WVTR) reach 7.3E
-5g/m
2day, the life-span reaches more than 11,411 hours, organic electroluminescence device material cheapness of the present invention, method for packing is simple, and easily large area preparation is suitable for large-scale industrialization and uses.
Accompanying drawing explanation
Fig. 1 is the structural representation of organic electroluminescence device of the present invention;
Fig. 2 is the preparation flow figure of organic electroluminescence device of the present invention;
Fig. 3 is the preparation flow figure of the encapsulated layer of organic electroluminescence device of the present invention.
Embodiment
The following stated is the preferred embodiment of the present invention.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also make some improvement and adjustment, these improvement and adjustment are also considered as in protection scope of the present invention.
The invention provides a kind of organic electroluminescence device 100 according to Fig. 1, comprise the substrate 10, anode 20, functional layer 30, negative electrode 40, encapsulated layer 50 and the cap 60 that stack gradually, substrate 10 and cap 60 form enclosure space, and anode 20, functional layer 30, negative electrode 40 and encapsulated layer 50 are encapsulated in this space.
In the present embodiment, substrate 10 is glass substrate or organic film, and this organic film is specially: polyethylene terephthalate;
In the present embodiment, anode 20 is set on substrate 10, anode 20 is indium tin oxide;
In the present embodiment, functional layer 30 is formed at anode 20 surfaces.Functional layer 30 comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, the electron injecting layer that stack gradually.Be appreciated that hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer can omit, now functional layer 30 only comprises luminescent layer;
Hole injection layer is N, N '-bis-(1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and be entrained in the molybdenum oxide (MoO in NPB
3).MoO
3quality percentage composition be 30%.The thickness of hole injection layer is 10nm;
Hole transmission layer is 4,4', 4 " tri-(carbazole-9-yl) triphenylamines (TCTA).The thickness of hole transmission layer is 30nm.
Luminescent layer material comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The quality percentage composition of guest materials is 5%.The thickness of luminescent layer is 20nm.
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3).CsN
3quality percentage composition be 30%.The thickness of electron injecting layer is 20nm.
It should be noted that, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer also can adopt other materials as required.
In the present embodiment, negative electrode 40 is set in functional layer 30, negative electrode 40 can be single-layer metal layer, and this single-layer metal is aluminium, silver and golden; Also can be stacked transparent cathode, this transparent cathode be ITO/Ag/ITO or ZnS/Ag/ZnS.
In the present embodiment, encapsulated layer 50 is set on negative electrode 40, this encapsulated layer 50 comprises protective layer 501, oxynitrides film 502, organic barrier layer 503, moisture absorbed layer 504 and heat dissipating layer 505.
In the present embodiment; oxynitrides film 502 is set on protective layer 501; oxynitrides film 502 is the oxidation film doped with nitride; wherein; described oxide material is silicon dioxide, alchlor, zirconium dioxide, hafnium oxide or tantalum pentoxide; described nitride material is silicon nitride, aluminium nitride, boron nitride, silicon nitride, tantalum nitride or titanium nitride, and the mass ratio of described oxide and described nitride is 1:4～2:3;
In the present embodiment, the thickness of oxynitrides film 502 is 80～150nm.
In the present embodiment, on oxynitrides film 502 surfaces, organic barrier layer 503 is set, the material on organic barrier layer 503 is polytetrafluoroethylene, methacrylic resin or cycloaliphatic epoxy resin, and thickness is 1～1.5 μ m.
In the present embodiment, the alternately laminated setting of described oxynitrides film 502 and organic barrier layer 503, the alternately laminated number of plies is for being more than or equal to 3 layers.
The alternately laminated setting of oxynitrides film and organic barrier layer can be extended to water oxygen permeation pathway, be arranged alternately and can make up hole, thereby make organic substance and inorganic matter in conjunction with can relieve stresses.
In the present embodiment, on 503 surfaces, organic barrier layer, moisture absorbed layer 504 is set, the material of moisture absorbed layer 504 is calcium oxide, barium monoxide, strontium oxide strontia or magnesium oxide, and thickness is 100nm～200nm.
In the present embodiment, on moisture absorbed layer 504 surfaces, heat dissipating layer 505 is set, the material of heat dissipating layer 505 is aluminium, silver, copper or their composition, and thickness is 200～500nm.
In the present embodiment, adopt cap 60 to encapsulate take substrate 10 as boundary, make to form confined space between substrate 10 and cap 60, above-mentioned each layer is arranged in this confined space, described cap 60 is sheet metal, and sheet metal comprises silver, aluminium or copper foil.
According to the preparation method of the known organic electroluminescence device 100 provided by the invention of Fig. 2, concrete steps comprise:
S101 prepares anode 20 on substrate 10, and on anode 20, forms functional layer 30.
Preliminary treatment was first carried out to remove the pollutant on substrate 10 surfaces in substrate 10 surfaces before forming anode 20 and functional layer 30, and the oxygen content of carrying out surface active increase substrate 10 surfaces is to improve the work function on substrate 10 surfaces.Be specially, substrate 10 is adopted successively and removes the each Ultrasonic Cleaning 5min of acetone, ethanol, ionized water and ethanol, dry up afterwards with nitrogen, baking box is dried.
In present embodiment, the material of hole injection layer comprises N, N '-bis-(1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and be entrained in the molybdenum oxide (MoO in NPB
3).MoO
3quality percentage composition be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of hole transmission layer is 4,4', 4 " tri-(carbazole-9-yl) triphenylamines (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10-5Pa, and evaporation rate is
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The quality percentage composition of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN3) in Bphen, and the quality percentage composition of CsN3 is 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
It should be noted that, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer also can adopt other materials as required.Hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer can omit, and now functional layer 20 only comprises luminescent layer.
Step S120, form negative electrodes 40 on functional layer 30 surface.
Step S130, on negative electrode 40 evaporation form encapsulated layer 50.
Known according to Fig. 3, the preparation process of encapsulated layer is as follows:
Encapsulated layer comprises protective layer 501, oxynitrides film 502, organic barrier layer 503, moisture absorbed layer 504 and heat dissipating layer 505 successively.
Step S1301, on negative electrode 40 evaporation form protective layer 501; the material of protective layer 501 is CuPc, N, N '-(1-naphthyl)-N, N '-diphenyl-4; 4 '-benzidine, 8-hydroxyquinoline aluminum, silica, magnesium fluoride or zinc sulphide, the thickness of protective layer is 200nm～300nm.Evaporation condition is that vacuum degree is 8 × 10
-5pa～3 × 10
-5pa, evaporation rate is
Step S1302, on protective layer 502, adopt magnetron sputtering to make oxynitrides film 502; oxynitrides film 502 is the oxidation film doped with nitride; wherein; described oxide material is silicon dioxide, alchlor, zirconium dioxide, hafnium oxide or tantalum pentoxide; described nitride material is silicon nitride, aluminium nitride, boron nitride, silicon nitride, tantalum nitride or titanium nitride, and the mass ratio of described oxide and described nitride is 1:4～2:3.Wherein, magnetron sputtering condition is: adopt three target magnetic control sputtering depositing systems, it is 1 × 10 that base vacuum degree is set
-5pa～1 × 10
-3pa, thicknesses of layers is set to 80nm～150nm, using the mass ratio of oxide and nitride be 1:4～2:3 as target, be that 5nm/min-40nm/min carries out magnetron sputtering and obtains oxynitrides film 502 at sputter rate.
Step S1303, on the oxynitrides film 502 organic barrier layers 503 of spin coating, then under inert atmosphere, adopt ultraviolet light polymerization, ultraviolet light polymerization condition is wavelength 200nm～400nm, light intensity 10mW/cm
2～15mW/cm
2, time for exposure 200s～300s, organic barrier layer 503 thickness are 1 μ m～1.5 μ m;
Step S1304, on organic barrier layer 503, adopt sputter mode to prepare moisture absorbed layer 504, the material of moisture absorbed layer 504 is calcium oxide, barium monoxide, strontium oxide strontia or magnesium oxide, and thickness is 100nm～200nm.Sputtering condition is that described sputter mode is specially vacuum degree 1 × 10
-5pa～1 × 10
-3pa, steams firing rate degree
step S1305, on moisture absorbed layer 504, adopt evaporation mode to prepare heat dissipating layer 505, the material of heat dissipating layer 505 is aluminium, silver, copper or their composition, and thickness is 200nm～500nm.Evaporation condition is that vacuum degree is 8 × 10
-5pa～3 × 10
-5pa, evaporation rate
In a preferred embodiment, by oxynitrides film 502 and organic barrier layer 503 that alternately repeating step S1303 and step S1304 prepare stacked setting, the alternately laminated number of plies is for being more than or equal to 3 layers;
Form encapsulated layer 50 by step S1302 to step S1305;
Step S140, form caps 60 on encapsulated layer 50 surface.
At cap edge coating cloth packaging plastic, adopt the mode of the ultraviolet curing packaging plastic that hardens, ultraviolet wavelength is 200nm～400nm, light intensity is 10mW/cm
2～15mW/cm
2, time for exposure 300s～400s, makes to form confined space between cap 60 and substrate 10.
Embodiment 1:
A preparation method for organic electroluminescence device, comprises the following steps:
1, the preparation of substrate pre-treatment and anode: adopt successively acetone, ethanol, deionized water and ethanol to adopt supersonic wave cleaning machine to clean, wash scavenging period is 5 minutes at every turn, then dries up with nitrogen, stand-by after use stove-drying; Ito glass is set on substrate, has the substrate of ito glass to carry out surface activation process to load, to increase the oxygen content of superficial layer, improve the work function of anode surface; Ito glass thickness is 100nm;
2, the preparation of functional layer:
Evaporation hole injection layer on anode;
The material of hole injection layer comprises N, N '-bis-(1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and be entrained in the molybdenum oxide (MoO in NPB
3).MoO
3quality percentage composition be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
Evaporation hole transmission layer on hole injection layer;
The material of hole transmission layer is 4,4', 4 " tri-(carbazole-9-yl) triphenylamines (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
Evaporation luminescent layer on hole transmission layer;
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The quality percentage composition of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
Evaporation electron transfer layer on luminescent layer;
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
Evaporation electron injecting layer on electron transfer layer;
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3), CsN
3quality percentage composition be 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
3, evaporation negative electrode on electron injecting layer:
Metallic cathode adopts aluminium (Al), and thickness is 100nm, and evaporation vacuum degree is 5 × 10
-5pa, evaporation rate is
4, the preparation of encapsulated layer:
Encapsulated layer is set on negative electrode, and encapsulated layer comprises protective layer, oxynitrides film, organic barrier layer, moisture absorbed layer and heat dissipating layer;
On negative electrode, evaporation forms protective layer, and the material of protective layer is CuPc, and the thickness of protective layer is 200nm.Evaporation condition is that vacuum degree is 3 × 10
-5pa, evaporation rate is
On protective layer, adopt magnetron sputtering to make oxynitrides film, oxynitrides film is the oxidation film doped with nitride, and wherein, oxide material is silicon dioxide, and nitride material is silicon nitride, and the mass ratio of oxide and described nitride is 3:7.Wherein, magnetron sputtering condition is: adopt three target magnetic control sputtering depositing systems, it is 1 × 10 that base vacuum degree is set
-5pa, thicknesses of layers is set to 120nm, is that 5nm/min carries out magnetron sputtering and obtains oxynitrides film at sputter rate.
On the organic barrier layer of oxynitrides film spin coating, organic barrier material is polytetrafluoroethylene, then under inert atmosphere, adopts ultraviolet light polymerization, and ultraviolet light polymerization condition is wavelength 365nm, light intensity 10mW/cm
2, time for exposure 200s, organic barrier layer thickness is 1 μ m;
Alternately prepare three times on oxynitrides film and organic barrier layer;
On organic barrier layer, adopt sputter mode to prepare moisture absorbed layer, the material of moisture absorbed layer is calcium oxide, and thickness is 200nm.Sputtering condition is that described sputter mode is specially vacuum degree 2 × 10
-4pa, steams firing rate degree
On moisture absorbed layer, adopt evaporation mode to prepare heat dissipating layer, the material of heat dissipating layer is aluminium, and thickness is 200nm.Evaporation condition is that vacuum degree is 5 × 10
-5pa, evaporation rate
5, the preparation of cap:
At cap edge coating cloth packaging plastic, adopt the mode of the ultraviolet curing packaging plastic that hardens, ultraviolet wavelength is 365nm, light intensity is 11mW/cm
2, time for exposure 350s, makes to form confined space between cap and substrate.
Embodiment 2:
A preparation method for organic electroluminescence device, comprises the following steps:
1,2,3 with embodiment 1;
4, the preparation of encapsulated layer:
Encapsulated layer is set on negative electrode, and encapsulated layer comprises protective layer, oxynitrides film, organic barrier layer, moisture absorbed layer and heat dissipating layer;
On negative electrode, evaporation forms protective layer, and the material of protective layer is N, N '-(1-naphthyl)-N, and N '-diphenyl-4,4 '-benzidine, the thickness of protective layer is 300nm.Evaporation condition is that vacuum degree is 3 × 10
-5pa, evaporation rate is
On protective layer, adopt magnetron sputtering to make oxynitrides film, oxynitrides film is the oxidation film doped with nitride, and wherein, oxide material is alchlor, and nitride material is aluminium nitride, and the mass ratio of oxide and described nitride is 1:4.Wherein, magnetron sputtering condition is: adopt three target magnetic control sputtering depositing systems, it is 2 × 10 that base vacuum degree is set
-4pa, thicknesses of layers is set to 80nm, is that 1nm/min carries out magnetron sputtering and obtains oxynitrides film at sputter rate.
On the organic barrier layer of oxynitrides film spin coating, organic barrier material is methacrylic resin, then under inert atmosphere, adopts ultraviolet light polymerization, and ultraviolet light polymerization condition is wavelength 365nm, light intensity 15mW/cm
2, time for exposure 200s, organic barrier layer thickness is 1.5 μ m;
Alternately prepare three times on oxynitrides film and organic barrier layer;
On organic barrier layer, adopt sputter mode to prepare moisture absorbed layer, the material of moisture absorbed layer is barium monoxide, and thickness is 200nm.Sputtering condition is that described sputter mode is specially vacuum degree 2 × 10
-4pa, steams firing rate degree
On moisture absorbed layer, adopt evaporation mode to prepare heat dissipating layer, the material of heat dissipating layer is silver, and thickness is 500nm.Evaporation condition is that vacuum degree is 5 × 10
-5pa, evaporation rate
5, the preparation of cap:
At cap edge coating cloth packaging plastic, the material of cap is aluminum slice, adopts the mode of the ultraviolet curing packaging plastic that hardens, and ultraviolet wavelength is 365nm, and light intensity is 10mW/cm
2, time for exposure 400s, makes to form confined space between cap and substrate.
Embodiment 3:
A preparation method for organic electroluminescence device, comprises the following steps:
1,2,3 with embodiment 1;
4, the preparation of encapsulated layer:
Encapsulated layer is set on negative electrode, and encapsulated layer comprises protective layer, oxynitrides film, organic barrier layer, moisture absorbed layer and heat dissipating layer;
On negative electrode, evaporation forms protective layer, and the material of protective layer is 8-hydroxyquinoline aluminum, and the thickness of protective layer is 250nm.Evaporation condition is that vacuum degree is 3 × 10
-5pa, evaporation rate is
On protective layer, adopt magnetron sputtering to make oxynitrides film, oxynitrides film is the oxidation film doped with nitride, and wherein, oxide material is alchlor, and nitride material is boron nitride, and the mass ratio of oxide and described nitride is 2:3.Wherein, magnetron sputtering condition is: adopt three target magnetic control sputtering depositing systems, it is 2 × 10 that base vacuum degree is set
-4pa, thicknesses of layers is set to 150nm, is that 40nm/min carries out magnetron sputtering and obtains oxynitrides film at sputter rate.
On the organic barrier layer of oxynitrides film spin coating, organic barrier material is cycloaliphatic epoxy resin, then under inert atmosphere, adopts ultraviolet light polymerization, and ultraviolet light polymerization condition is wavelength 365nm, light intensity 11mW/cm
2, time for exposure 230s, organic barrier layer thickness is 1.2 μ m;
Alternately prepare four times on oxynitrides film and organic barrier layer;
On organic barrier layer, adopt sputter mode to prepare moisture absorbed layer, the material of moisture absorbed layer is strontium oxide strontia, and thickness is 150nm.Sputtering condition is that described sputter mode is specially vacuum degree 2 × 10
-4pa, steams firing rate degree
On moisture absorbed layer, adopt evaporation mode to prepare heat dissipating layer, the material of heat dissipating layer is copper, and thickness is 300nm.Evaporation condition is that vacuum degree is 5 × 10
-5pa, evaporation rate
5, the preparation of cap:
At cap edge coating cloth packaging plastic, the material of cap is copper foil, adopts the mode of the ultraviolet curing packaging plastic that hardens, and ultraviolet wavelength is 365nm, and light intensity is 15mW/cm
2, time for exposure 300s, makes to form confined space between cap and substrate.
Embodiment 4:
A preparation method for organic electroluminescence device, comprises the following steps:
1,2,3 with embodiment 1;
4, the preparation of encapsulated layer:
Encapsulated layer is set on negative electrode, and encapsulated layer comprises protective layer, oxynitrides film, organic barrier layer, moisture absorbed layer and heat dissipating layer;
On negative electrode, evaporation forms protective layer, and the material of protective layer is silica, and the thickness of protective layer is 200nm.Evaporation condition is that vacuum degree is 5 × 10
-5pa, evaporation rate is
On protective layer, adopt magnetron sputtering to make oxynitrides film, oxynitrides film is the oxidation film doped with nitride, and wherein, oxide material is hafnium oxide, and nitride material is silicon nitride, and the mass ratio of oxide and described nitride is 3:7.Wherein, magnetron sputtering condition is: adopt three target magnetic control sputtering depositing systems, it is 2 × 10 that base vacuum degree is set
-4pa, thicknesses of layers is set to 130nm, is that 20nm/min carries out magnetron sputtering and obtains oxynitrides film at sputter rate.
On the organic barrier layer of oxynitrides film spin coating, organic barrier material is polytetrafluoroethylene, then under inert atmosphere, adopts ultraviolet light polymerization, and ultraviolet light polymerization condition is wavelength 365nm, light intensity 10mW/cm
2, time for exposure 200s, organic barrier layer thickness is 1 μ m;
Alternately prepare five times on oxynitrides film and organic barrier layer;
On organic barrier layer, adopt sputter mode to prepare moisture absorbed layer, the material of moisture absorbed layer is magnesium oxide, and thickness is 100nm.Sputtering condition is that described sputter mode is specially vacuum degree 2 × 10
-4pa, steams firing rate degree
On moisture absorbed layer, adopt evaporation mode to prepare heat dissipating layer, the material of heat dissipating layer is albronze, and the mass ratio of copper and aluminium is 3:1, and thickness is 500nm.Evaporation condition is that vacuum degree is 5 × 10
-5pa, evaporation rate
5, the preparation of cap:
At cap edge coating cloth packaging plastic, the material of cap is copper foil, adopts the mode of the ultraviolet curing packaging plastic that hardens, and ultraviolet wavelength is 365nm, and light intensity is 11mW/cm
2, time for exposure 350s, makes to form confined space between cap and substrate.
Embodiment 5:
A preparation method for organic electroluminescence device, comprises the following steps:
1,2,3 with embodiment 1;
4, the preparation of encapsulated layer:
Encapsulated layer is set on negative electrode, and encapsulated layer comprises protective layer, oxynitrides film, organic barrier layer, moisture absorbed layer and heat dissipating layer;
On negative electrode, evaporation forms protective layer, and the material of protective layer is magnesium fluoride, and the thickness of protective layer is 300nm.Evaporation condition is that vacuum degree is 5 × 10
-5pa, evaporation rate is
On protective layer, adopt magnetron sputtering to make oxynitrides film, oxynitrides film is the oxidation film doped with nitride, and wherein, oxide material is hafnium oxide, and nitride material is tantalum nitride, and the mass ratio of oxide and described nitride is 3:7.Wherein, magnetron sputtering condition is: adopt three target magnetic control sputtering depositing systems, it is 2 × 10 that base vacuum degree is set
-4pa, thicknesses of layers is set to 120nm, is that 1nm/min carries out magnetron sputtering and obtains oxynitrides film at sputter rate.
On the organic barrier layer of oxynitrides film spin coating, organic barrier material is methacrylic resin, then under inert atmosphere, adopts ultraviolet light polymerization, and ultraviolet light polymerization condition is wavelength 365nm, light intensity 15mW/cm
2, time for exposure 200s, organic barrier layer thickness is 1.5 μ m;
On organic barrier layer, adopt sputter mode to prepare moisture absorbed layer, the material of moisture absorbed layer is calcium oxide, and thickness is 200nm.Sputtering condition is that described sputter mode is specially vacuum degree 2 × 10
-4pa, steams firing rate degree
On moisture absorbed layer, adopt evaporation mode to prepare heat dissipating layer, the material of heat dissipating layer is albronze, and the mass ratio of copper and aluminium is 3:1, and thickness is 500nm.Evaporation condition is that vacuum degree is 5 × 10
-5pa, evaporation rate
5, the preparation of cap:
At cap edge coating cloth packaging plastic, the material of cap is copper foil, adopts the mode of the ultraviolet curing packaging plastic that hardens, and ultraviolet wavelength is 365nm, and light intensity is 15mW/cm
2, time for exposure 400s, makes to form confined space between cap and substrate.
Embodiment 6:
A preparation method for organic electroluminescence device, comprises the following steps:
1,2,3 with embodiment 1;
4, the preparation of encapsulated layer:
Encapsulated layer is set on negative electrode, and encapsulated layer comprises protective layer, oxynitrides film, organic barrier layer, moisture absorbed layer and heat dissipating layer;
On negative electrode, evaporation forms protective layer, and the material of protective layer is zinc sulphide, and the thickness of protective layer is 250nm.Evaporation condition is that vacuum degree is 5 × 10
-5pa, evaporation rate is
On protective layer, adopt magnetron sputtering to make oxynitrides film, oxynitrides film is the oxidation film doped with nitride, and wherein, oxide material is tantalum pentoxide, and nitride material is titanium nitride, and the mass ratio of oxide and described nitride is 3:7.Wherein, magnetron sputtering condition is: adopt three target magnetic control sputtering depositing systems, it is 2 × 10 that base vacuum degree is set
-4pa, thicknesses of layers is set to 130nm, is that 5nm/min carries out magnetron sputtering and obtains oxynitrides film at sputter rate.
On the organic barrier layer of oxynitrides film spin coating, organic barrier material is cycloaliphatic epoxy resin, then under inert atmosphere, adopts ultraviolet light polymerization, and ultraviolet light polymerization condition is wavelength 365nm, light intensity 11mW/cm
2, time for exposure 230s, organic barrier layer thickness is 1.2 μ m;
On organic barrier layer, adopt sputter mode to prepare moisture absorbed layer, the material of moisture absorbed layer is barium monoxide, and thickness is 150nm.Sputtering condition is that described sputter mode is specially vacuum degree 2 × 10
-4pa, steams firing rate degree
On moisture absorbed layer, adopt evaporation mode to prepare heat dissipating layer, the material of heat dissipating layer is silver, and thickness is 300nm.Evaporation condition is that vacuum degree is 5 × 10
-5pa, evaporation rate
5, the preparation of cap:
At cap edge coating cloth packaging plastic, the material of cap is copper foil, adopts the mode of the ultraviolet curing packaging plastic that hardens, and ultraviolet wavelength is 365nm, and light intensity is 11mW/cm
2, time for exposure 350s, makes to form confined space between cap and substrate.
Effect embodiment
For the beneficial effect of valid certificates organic electroluminescence device of the present invention and preparation method thereof, provide related experiment data as follows.
The test condition of organic electroluminescence device water oxygen permeability is: equipment: the Keithley2400 of Keithley company, specimen holder; Method: the variation of test Ca film resistance; Condition: 20 ℃～25 ℃ of temperature, humidity 40%～60%.Result is as follows:
Table 1. embodiment 1 ~ 6 organic electroluminescence device water oxygen permeability
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Embodiment 5 | Embodiment 6 | |
| WVTR(g/m 2/day) | 6.4E -5 | 5.1E -5 | 7.3E -5 | 6.0E -5 | 4.1E -5 | 5.7E -5 |
Table 1 is embodiment 1 ~ 6 organic electroluminescence device water oxygen permeability, makes water resistance (WVTR) reach 7.3E
-5g/m
2day.
Organic electro-luminescence device lifetime test condition: equipment: the Keithley2400 of Keithley company, the CS-100A colorimeter of Konica Minolta company; Method: test brightness is from 1000cd/m
2drop to 700cd/m
2time used; Condition: 20 ℃～25 ℃ of temperature, humidity 40%～60%.
Table 2. embodiment 1 ~ 6 organic electro-luminescence device lifetime situation
Table 2 is that embodiment 1 ~ 6 organic electro-luminescence device lifetime situation can be found out, the life-span of organic electroluminescence device of the present invention reaches 1.1411 ten thousand hours above (T70@1000cd/m
2).
To sum up; organic electroluminescence device provided by the invention can reduce outside water, the erosion of oxygen isoreactivity material to organic electroluminescence device effectively; thereby device organic functional material and electrode are formed to effective protection; meet the sealing requirements of encapsulation, the life-span that can improve significantly OLED device.
Claims (10)
1. an organic electroluminescence device, comprise the substrate, anode, functional layer, negative electrode, encapsulated layer and the cap that stack gradually, substrate and cap form enclosure space, anode, functional layer, negative electrode, encapsulated layer are contained in this enclosure space, it is characterized in that, described encapsulated layer comprises protective layer, oxynitrides film, organic barrier layer, moisture absorbed layer and heat dissipating layer successively;
Described oxynitrides film is the oxidation film doped with nitride, wherein, described oxide material is silicon dioxide, alchlor, zirconium dioxide, hafnium oxide or tantalum pentoxide, described nitride material is silicon nitride, aluminium nitride, boron nitride, silicon nitride, tantalum nitride or titanium nitride, and the mass ratio of described oxide and described nitride is 1:4～2:3.
2. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described oxynitrides film is 80nm～150nm.
3. organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described protective layer is CuPc, N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine, 8-hydroxyquinoline aluminum, silica, magnesium fluoride or zinc sulphide, the thickness of protective layer is 200nm～300nm;
The material on described organic barrier layer is polytetrafluoroethylene, methacrylic resin or cycloaliphatic epoxy resin, and the thickness on described organic barrier layer is 1 μ m～1.5 μ m.
4. organic electroluminescence device as claimed in claim 1, is characterized in that, the material of described moisture absorbed layer is calcium oxide, barium monoxide, strontium oxide strontia or magnesium oxide, and described moisture absorber thickness is 100nm～200nm;
The material of described heat dissipating layer is aluminium, silver, copper or their composition, and the thickness of described heat dissipating layer is 200nm～500nm; And
Described cap is sheet metal, and the material of sheet metal is silver, aluminium or copper.
5. organic electroluminescence device as claimed in claim 1, is characterized in that, described oxynitrides film and the alternately laminated setting in described organic barrier layer, and the stacked number of plies is more than or equal to three layers.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
On clean glass substrate or organic film substrate, be prepared with the anode of organic electroluminescence devices; Adopt the method for vacuum evaporation on anode conducting substrate, to prepare successively functional layer, negative electrode and encapsulated layer, adopt ultraviolet light polymerization mode that cap is encapsulated, make described substrate and described cap form enclosure space;
The preparation of described encapsulated layer comprises and first on negative electrode, adopts the mode of vacuum evaporation to prepare described protective layer;
On described protective layer, adopt magnetron sputtering to spatter altogether the described oxynitrides film of preparation; wherein; described oxide material is silicon dioxide, alchlor, zirconium dioxide, hafnium oxide or tantalum pentoxide; described nitride material is silicon nitride, aluminium nitride, boron nitride, silicon nitride, tantalum nitride or titanium nitride; described magnetron sputtering condition is: adopt three target magnetic control sputtering depositing systems, it is 1 × 10 that base vacuum degree is set
-5pa～1 × 10
-3pa, thicknesses of layers is set to 80nm～150nm, using the mass ratio of described oxide and described nitride be 1:4～2:3 as target, be under 5nm/min～40nm/min condition, to carry out magnetron sputtering to obtain oxynitrides film at sputter rate;
Then on described oxynitrides film, adopt the technique of first spin coating post-exposure to prepare described organic barrier layer, the technical process of described first spin coating post-exposure is, by described organic barrier material spin coating, be then 200nm～400nm ultraviolet light polymerization with wavelength, light intensity is 10mW/cm
2～15mW/cm
2, time for exposure 200s～300s;
Then on described organic barrier layer, adopt sputter mode to prepare described moisture absorbed layer, fin described in vacuum evaporation on described moisture absorbed layer;
Finally adopt packaging plastic that sheet metal encapsulation is formed to cap, make described substrate and described cap form confined space, described anode, functional layer, negative electrode and encapsulated layer are contained in this enclosure space.
7. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, the thickness of described oxynitrides film is 80nm～150nm.
8. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, the material of described protective layer is CuPc, N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine, 8-hydroxyquinoline aluminum, silica, magnesium fluoride or zinc sulphide, the thickness of protective layer is 200nm～300nm;
The material of described organic gear layer is polytetrafluoroethylene, methacrylic resin or cycloaliphatic epoxy resin, and the thickness of described organic gear layer is 1 μ m～1.5 μ m.
9. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, the material of described moisture absorbed layer is calcium oxide, barium monoxide, strontium oxide strontia or magnesium oxide, the thickness of described moisture absorbed layer is 100nm～200nm, the material of described heat dissipating layer is aluminium, silver, copper or their composition, the thickness of described heat dissipating layer is 200nm～500nm, and described cap is sheet metal, and the material of sheet metal is silver, aluminium or copper.
10. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, repeat to prepare the preparation technology on described oxynitrides film and organic barrier layer, make the stacked setting of described oxynitrides film and organic barrier layer, the alternately laminated number of plies is for being more than or equal to 3 layers.
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Application publication date: 20140611 |