CN103855293B - Led - Google Patents
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- CN103855293B CN103855293B CN201410038291.3A CN201410038291A CN103855293B CN 103855293 B CN103855293 B CN 103855293B CN 201410038291 A CN201410038291 A CN 201410038291A CN 103855293 B CN103855293 B CN 103855293B
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- 239000002184 metal Substances 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000003292 glue Substances 0.000 claims abstract description 52
- 238000003466 welding Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 64
- 238000004806 packaging method and process Methods 0.000 abstract description 23
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 230000007704 transition Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000047 product Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 13
- 239000008393 encapsulating agent Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000002390 adhesive tape Substances 0.000 description 8
- 239000000741 silica gel Substances 0.000 description 6
- 229910002027 silica gel Inorganic materials 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000011265 semifinished product Substances 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48101—Connecting bonding areas at the same height, e.g. horizontal bond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
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- Led Device Packages (AREA)
Abstract
本发明适用于半导体技术领域,提供了一种LED,所述LED包括用作LED正、负极的第一金属蚀刻片和第二金属蚀刻片以及正、负极分别焊接于所述第一金属蚀刻片和第二金属蚀刻片的LED覆晶晶片,所述LED覆晶晶片由荧光胶覆盖,所述荧光胶由透明封装胶覆盖,所述第一金属蚀刻片与第二金属蚀刻片相互靠近的两个侧面形成“凸”形贯穿槽。这样LED覆晶晶片的电极到应用端的焊接电极之间存在用作LED正、负极的金属蚀刻片过渡,使得本LED产品在应用端的使用不会增加难度,完全等同于注塑成型的支架使用方式。又因本LED不具有常规LED封装所需的支架,而具有极高的可靠性。此外,本LED封装成本极低。
The present invention is applicable to the field of semiconductor technology, and provides an LED, which includes a first etched metal sheet and a second etched metal sheet used as positive and negative electrodes of the LED, and the positive and negative electrodes are respectively welded to the first etched metal sheet An LED flip-chip chip with a second metal etching sheet, the LED flip-chip chip is covered by fluorescent glue, the fluorescent glue is covered by transparent encapsulation glue, the first metal etching sheet and the second metal etching sheet are close to each other The two sides form a "convex" shaped through groove. In this way, there is a transition between the electrode of the LED flip-chip chip and the welding electrode on the application side, which is used as the positive and negative electrodes of the LED, so that the use of this LED product on the application side will not increase the difficulty, which is completely equivalent to the use of injection molded brackets. And because the LED does not have the bracket required by conventional LED packaging, it has extremely high reliability. In addition, the packaging cost of the LED is extremely low.
Description
技术领域technical field
本发明属于半导体领域,尤其涉及一种LED。The invention belongs to the field of semiconductors, in particular to an LED.
背景技术Background technique
白光LED产品的封装方式是将LED晶片通过固晶胶粘接或共晶焊接的方式固定在支架上,采用金线将晶片的正极连接于支架的正极,晶片的负极连接于支架的负极,再填充符合目标色区的荧光粉。由于支架、晶片胶体的热膨胀系数不同,在支架、固晶胶、金线、胶体等方面容易出现可靠性问题,且LED支架种类繁多,粘接支架正负极的材质为PPA,PCT,EMC材质,在耐高温性,气密性均有较大缺陷,而影响LED产品可靠性;陶瓷支架具有较好的耐高温性和较好的气密性,但支架成本接近晶片成本,且陶瓷支架封装LED制费昂贵,设备投入大,产能小。总之,支架封装结构的LED照明产品在可靠性,使用寿命,产品价格方面均是LED照明产品替代传统照明的较大阻碍。The packaging method of white light LED products is to fix the LED chip on the bracket by bonding or eutectic welding, use gold wires to connect the positive pole of the chip to the positive pole of the bracket, and connect the negative pole of the chip to the negative pole of the bracket, and then Fill with phosphors that match the target color zone. Due to the different thermal expansion coefficients of brackets and wafer colloids, reliability problems are prone to occur in brackets, die-bonding glue, gold wires, colloids, etc., and there are many types of LED brackets. The materials for bonding the positive and negative electrodes of the bracket are PPA, PCT, and EMC. , in terms of high temperature resistance and air tightness, there are relatively large defects, which affect the reliability of LED products; ceramic brackets have better high temperature resistance and better air tightness, but the cost of the bracket is close to the chip cost, and the package LED manufacturing costs are expensive, equipment investment is large, and production capacity is small. In short, the reliability, service life and product price of LED lighting products with bracket package structure are the biggest obstacles for LED lighting products to replace traditional lighting.
发明内容Contents of the invention
本发明实施例的目的在于提供一种可靠性高的LED。The purpose of the embodiments of the present invention is to provide an LED with high reliability.
本发明实施例是这样实现的,一种LED,包括用作LED正、负极的第一金属蚀刻片和第二金属蚀刻片以及正、负极分别焊接于所述第一金属蚀刻片和第二金属蚀刻片的LED覆晶晶片,所述LED覆晶晶片由荧光胶覆盖,所述荧光胶由透明封装胶覆盖,所述第一金属蚀刻片与第二金属蚀刻片相互靠近的两个侧面形成“凸”形贯穿槽,所述透明封装胶同时填充于所述“凸”形贯穿槽的上部,所述“凸”形贯穿槽的下部填充有防焊材料,所述“凸”形贯穿槽的上部先于所述所述“凸”形贯穿槽的下部蚀刻而成。The embodiment of the present invention is achieved in this way, an LED, including a first metal etching sheet and a second metal etching sheet used as the positive and negative electrodes of the LED, and the positive and negative electrodes are welded to the first metal etching sheet and the second metal etching sheet respectively. An etched LED flip chip, the LED flip chip is covered by fluorescent glue, the fluorescent glue is covered by transparent encapsulation glue, the two sides of the first metal etched sheet and the second metal etched sheet that are close to each other form a " Convex-shaped through-groove, the transparent packaging glue is filled in the upper part of the "convex"-shaped through-groove, the lower part of the "convex"-shaped through-groove is filled with solder resist material, the "convex"-shaped through-groove The upper part is etched prior to the lower part of the "convex" shaped through groove.
本发明实施例由第一金属蚀刻片和第二金属蚀刻片分别用作LED的正、负极,而LED覆晶晶片的正、负极分别焊接于所述第一金属蚀刻片和第二金属蚀刻片,这样LED覆晶晶片的电极到应用端的焊接电极之间存在用作LED正、负极的金属蚀刻片过渡,使得本LED产品在应用端的使用不会增加难度,完全等同于注塑成型的支架使用方式。又因本LED不具有常规LED封装所需的支架,而具有极高的可靠性。此外,本LED封装成本极低。In the embodiment of the present invention, the first etched metal sheet and the second etched metal sheet are used as the positive and negative poles of the LED respectively, and the positive and negative poles of the LED flip chip are soldered to the first etched metal sheet and the etched metal sheet respectively. , so that there is a transition between the electrode of the LED flip-chip chip and the welding electrode on the application side, which is used as the positive and negative electrodes of the LED, so that the use of this LED product on the application side will not increase the difficulty, which is completely equivalent to the use of the injection molding bracket. . And because the LED does not have the bracket required by conventional LED packaging, it has extremely high reliability. In addition, the packaging cost of the LED is extremely low.
附图说明Description of drawings
图1是本发明实施例提供的LED的结构示意图(透明封装胶仅填充于“凸”形贯穿槽的上部);Figure 1 is a schematic structural view of an LED provided by an embodiment of the present invention (the transparent encapsulant is only filled in the upper part of the "convex" shaped through groove);
图2是本发明实施例提供的LED的结构示意图(透明封装胶填充于“凸”形贯穿槽的上部,且该“凸”形贯穿槽的下部填充有防焊材料);Fig. 2 is a schematic structural view of the LED provided by the embodiment of the present invention (the transparent encapsulant is filled in the upper part of the "convex" shaped through groove, and the lower part of the "convex" shaped through groove is filled with solder resist material);
图3是本发明实施例提供的LED的结构示意图(透明封装胶填充于整个“凸”形贯穿槽);Fig. 3 is a schematic structural view of the LED provided by the embodiment of the present invention (transparent encapsulant is filled in the entire "convex" shaped through groove);
图4是本发明第一实施例提供的LED封装方法的实现流程图;Fig. 4 is a flow chart of realizing the LED packaging method provided by the first embodiment of the present invention;
图5是金属蚀刻片蚀刻出第一半蚀刻槽的结构示意图;Fig. 5 is a structural schematic diagram of etching the first half-etched groove out of the metal etching sheet;
图6是LED覆晶晶片的结构示意图;Fig. 6 is a schematic structural diagram of an LED flip chip;
图7是LED覆晶晶片共晶焊于第一半蚀刻槽两旁的结构示意图;Fig. 7 is a structural schematic diagram of LED flip-chip chip eutectic soldering on both sides of the first half etching groove;
图8是于图7所示LED覆晶晶片表面涂覆荧光胶的结构示意图;Fig. 8 is a schematic structural view of coating fluorescent glue on the surface of the LED flip chip shown in Fig. 7;
图9是于固设LED覆晶晶片的区域周围蚀刻用以规范荧光胶的凹槽的结构示意图;FIG. 9 is a structural schematic diagram of etching grooves for standardizing fluorescent glue around the area where the LED flip chip is fixed;
图10是于图9所示LED覆晶晶片表面涂覆荧光胶的结构示意图;Fig. 10 is a schematic structural view of coating fluorescent glue on the surface of the LED flip chip shown in Fig. 9;
图11是于图8所示金属蚀刻片上布设透明封装胶的结构示意图(剖视图);Fig. 11 is a schematic structural view (sectional view) of laying transparent encapsulant on the etched metal sheet shown in Fig. 8;
图12是于图8所示金属蚀刻片上布设透明封装胶的结构示意图(俯视图);Fig. 12 is a schematic structural view (top view) of laying transparent encapsulant on the etched metal sheet shown in Fig. 8;
图13是于金属蚀刻片底部蚀刻出第二半蚀刻槽的结构示意图;Fig. 13 is a schematic structural view of etching a second half-etched groove at the bottom of the metal etching sheet;
图14是从图13所示半成品切割出各LED的结构示意图;Fig. 14 is a schematic diagram of the structure of each LED cut out from the semi-finished product shown in Fig. 13;
图15是于图13所示第二半蚀刻槽内填充防焊材料的结构示意图;Fig. 15 is a schematic structural view of filling the solder resist material in the second half-etched groove shown in Fig. 13;
图16是从图15所示半成品切割出各LED的结构示意图;Fig. 16 is a schematic structural diagram of cutting out each LED from the semi-finished product shown in Fig. 15;
图17是本发明第二实施例提供的LED封装方法的实现流程图;Fig. 17 is a flow chart of realizing the LED packaging method provided by the second embodiment of the present invention;
图18是金属蚀刻片蚀刻出蚀刻槽的结构示意图;Fig. 18 is a structural schematic diagram of an etching groove etched out of a metal etching sheet;
图19是LED覆晶晶片的结构示意图;Fig. 19 is a schematic structural diagram of an LED flip chip;
图20是LED覆晶晶片的电极共晶焊于蚀刻槽上部两旁的结构示意图;Fig. 20 is a structural schematic diagram of the electrode eutectic welding of the LED flip-chip chip on both sides of the upper part of the etching groove;
图21是图20的俯视图;Figure 21 is a top view of Figure 20;
图22是于图20、21所示LED覆晶晶片表面涂覆荧光胶的结构示意图;FIG. 22 is a schematic structural view of coating fluorescent glue on the surface of the LED flip chip shown in FIGS. 20 and 21;
图23是图22的俯视图;Figure 23 is a top view of Figure 22;
图24是于固设LED覆晶晶片的区域周围蚀刻用以规范荧光胶的凹槽的结构示意图;FIG. 24 is a structural schematic diagram of etching grooves for standardizing fluorescent glue around the area where the LED flip-chip is fixed;
图25是于图24所示LED覆晶晶片表面涂覆荧光胶的结构示意图;Fig. 25 is a schematic structural view of coating fluorescent glue on the surface of the LED flip chip shown in Fig. 24;
图26是于图22所示金属蚀刻片下表面贴设胶带的结构示意图;Fig. 26 is a schematic structural view of sticking an adhesive tape on the lower surface of the metal etching sheet shown in Fig. 22;
图27是于图26所示金属蚀刻片上布设透明封装胶的结构示意图;Fig. 27 is a schematic structural view of laying transparent encapsulant on the etched metal sheet shown in Fig. 26;
图28是图27的俯视图;Figure 28 is a top view of Figure 27;
图29是透明封装胶固化后,撕去了胶带的结构示意图;Fig. 29 is a schematic diagram of the structure after the transparent encapsulant is cured and the adhesive tape is removed;
图30是对图29所示半成品进行切割时的结构示意图;Fig. 30 is a structural schematic diagram when cutting the semi-finished product shown in Fig. 29;
图31切割出各LED的结构示意图;Figure 31 cuts out the structural schematic diagram of each LED;
图32是图31的俯视图。FIG. 32 is a top view of FIG. 31 .
具体实施方式detailed description
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
本发明实施例由第一金属蚀刻片和第二金属蚀刻片分别用作LED的正、负极,而LED覆晶晶片的正、负极分别焊接于所述第一金属蚀刻片和第二金属蚀刻片,这样LED覆晶晶片的电极到应用端的焊接电极之间存在用作LED正、负极的金属蚀刻片过渡,使得本LED产品在应用端的使用不会增加难度,完全等同于注塑成型的支架使用方式。又因本LED不具有常规LED封装所需的支架,而具有极高的可靠性。此外,本LED封装成本极低。In the embodiment of the present invention, the first etched metal sheet and the second etched metal sheet are respectively used as the positive and negative poles of the LED, and the positive and negative poles of the LED flip chip are welded to the first etched metal sheet and the etched metal sheet respectively. , so that there is a transition between the electrode of the LED flip-chip chip and the welding electrode on the application side, which is used as the positive and negative electrodes of the LED, so that the use of this LED product on the application side will not increase the difficulty, which is completely equivalent to the use of the injection molding bracket. . And because the LED does not have the bracket required by conventional LED packaging, it has extremely high reliability. In addition, the packaging cost of the LED is extremely low.
以下结合具体实施例对本发明的实现进行详细描述。The implementation of the present invention will be described in detail below in conjunction with specific embodiments.
如图1~3所示,本发明实施例提供的LED包括用作LED正、负极的第一金属蚀刻片11和第二金属蚀刻片12以及正、负极分别焊接于所述第一金属蚀刻片11和第二金属蚀刻片12的LED覆晶晶片3,所述LED覆晶晶片3由荧光胶4覆盖,所述荧光胶4由透明封装胶7覆盖,所述第一金属蚀刻片11与第二金属蚀刻片12相互靠近的两个侧面形成“凸”形贯穿槽。这样LED覆晶晶片3的电极到应用端的焊接电极之间存在用作LED正、负极的金属蚀刻片11、12过渡,使得本LED产品在应用端的使用不会增加难度,完全等同于注塑成型的支架使用方式。又因本LED不具有常规LED封装所需的支架,而具有极高的可靠性。此外,本LED封装成本极低。As shown in Figures 1 to 3, the LED provided by the embodiment of the present invention includes a first etched metal sheet 11 and a second etched metal sheet 12 used as positive and negative electrodes of the LED, and the positive and negative electrodes are welded to the first etched metal sheet respectively. 11 and the LED flip chip 3 of the second metal etching sheet 12, the LED flip chip 3 is covered by the fluorescent glue 4, the fluorescent glue 4 is covered by the transparent encapsulation glue 7, the first metal etching sheet 11 and the second metal etching sheet The two side surfaces of the two metal etching pieces 12 close to each other form a "convex" shaped through groove. In this way, there is a transition between the electrode of the LED flip-chip chip 3 and the welding electrode of the application end, which are used as LED positive and negative electrodes. How to use the bracket. And because the LED does not have the bracket required by conventional LED packaging, it has extremely high reliability. In addition, the packaging cost of the LED is extremely low.
作为本发明的一个实施例,所述透明封装胶7同时填充于“凸”形贯穿槽的上部,如图1所示。作为优选,所述“凸”形贯穿槽的下部填充有防焊材料10,如此有助于LED 8正、负极金属蚀刻片之间的粘接,提升整个LED 8的可靠性;其次保证了应用端焊锡膏不会短路,如图2所示。As an embodiment of the present invention, the transparent encapsulant 7 is simultaneously filled in the upper part of the “convex” through-groove, as shown in FIG. 1 . As a preference, the lower part of the "convex" through-groove is filled with solder resist material 10, which helps the bonding between the positive and negative metal etched sheets of the LED 8 and improves the reliability of the entire LED 8; secondly, it ensures the application terminal solder paste will not short circuit, as shown in Figure 2.
作为本发明的另一个实施例,所述透明封装胶7填充于整个“凸”形贯穿槽,如图3所示。同样有助于LED 8正、负极金属蚀刻片之间的粘接,提升整个LED 8的可靠性;其次保证了应用端焊锡膏不会短路。As another embodiment of the present invention, the transparent encapsulant 7 is filled in the entire “convex” through groove, as shown in FIG. 3 . It also contributes to the bonding between the positive and negative metal etching sheets of the LED 8 and improves the reliability of the entire LED 8; secondly, it ensures that the solder paste at the application end will not be short-circuited.
图4示出了本发明第一实施例提供的LED封装方法的实现流程,详述如下。Fig. 4 shows the implementation process of the LED packaging method provided by the first embodiment of the present invention, which is described in detail as follows.
在步骤S401中,于金属蚀刻片上部蚀刻多条平行的第一半蚀刻槽。In step S401, a plurality of parallel first half-etched grooves are etched on the metal etching sheet.
本发明实施例于金属蚀刻片1上部蚀刻多条相互平行的第一半蚀刻槽2,所述第一半蚀刻槽2的宽度等于LED覆晶晶片3正、负极间的最短距离,便于后续工序焊接所述LED覆晶晶片3,所述第一半蚀刻槽2的深度略大于LED覆晶晶片3正、负极间的最短距离,如图5、6所示。其中,所述金属蚀刻片1的厚度优选为0.1~0.3mm。因所制LED产品尺寸决定于蚀刻片的正、负极的尺寸,这样容易制成与常规LED封装产品同等大小的蚀刻片支架的封装产品。In the embodiment of the present invention, a plurality of parallel first half-etched grooves 2 are etched on the upper part of the metal etching sheet 1. The width of the first half-etched grooves 2 is equal to the shortest distance between the positive and negative electrodes of the LED flip-chip chip 3, which is convenient for subsequent processes. The LED flip chip 3 is welded, and the depth of the first half-etched groove 2 is slightly greater than the shortest distance between the positive and negative electrodes of the LED flip chip 3 , as shown in FIGS. 5 and 6 . Wherein, the thickness of the metal etching sheet 1 is preferably 0.1-0.3 mm. Because the size of the manufactured LED product is determined by the size of the positive and negative electrodes of the etched sheet, it is easy to make a packaged product of the etched sheet bracket with the same size as the conventional LED packaged product.
在步骤S402中,将LED覆晶晶片的正、负电极分别焊接于所述第一半蚀刻槽的两旁。In step S402, the positive and negative electrodes of the LED flip chip are welded to both sides of the first half-etched groove respectively.
本发明实施例先获取多个LED覆晶晶片3,然后将各LED覆晶晶片3的正、负电极共晶焊于所述第一半蚀刻槽2的两旁,如图7所示。应当说明的是,所述LED覆晶晶片3的正、负电极均位于其底部,其中一个为正电极,另一个为负电极。In the embodiment of the present invention, a plurality of LED flip-chip chips 3 are obtained first, and then the positive and negative electrodes of each LED flip-chip chip 3 are eutectically soldered to both sides of the first half-etched groove 2 , as shown in FIG. 7 . It should be noted that the positive and negative electrodes of the LED flip chip 3 are located at the bottom thereof, one of which is a positive electrode and the other is a negative electrode.
在步骤S403中,于所述金属蚀刻片上涂覆覆盖LED覆晶晶片的荧光胶并使之固化。In step S403 , coating the fluorescent glue covering the LED flip chip on the metal etching sheet and curing it.
本发明实施例于所述金属蚀刻片1上涂覆覆盖LED覆晶晶片3的荧光胶4并使之固化,如图8~10所示。具体地,申请人可采用其在文献号为CN102544260A的专利申请文件中公开的在LED覆晶晶片表面涂覆荧光胶的方法。如果采用凹槽6规范所述荧光胶4,在蚀刻所述第一半蚀刻槽2时,于固设所述LED覆晶晶片3的区域周围蚀刻凹槽6,如图9所示。其中,所述荧光胶4的厚度优选为0.03~0.5mm。因所述荧光胶4具有一定粘度及表面张力,其不会沿所述第一半蚀刻槽2往外流。In the embodiment of the present invention, the fluorescent glue 4 covering the LED chip-on-chip 3 is coated on the metal etching sheet 1 and cured, as shown in FIGS. 8-10 . Specifically, the applicant can adopt the method of coating fluorescent glue on the surface of the LED flip chip disclosed in the patent application document with the document number CN102544260A. If grooves 6 are used to standardize the fluorescent glue 4 , when etching the first half-etched groove 2 , grooves 6 are etched around the area where the LED flip chip 3 is fixed, as shown in FIG. 9 . Wherein, the thickness of the fluorescent glue 4 is preferably 0.03-0.5 mm. Because the fluorescent glue 4 has a certain viscosity and surface tension, it will not flow out along the first half-etched groove 2 .
在步骤S404中,于所述金属蚀刻片上成型覆盖所述荧光胶的透明封装胶并使之固化。In step S404, a transparent encapsulation glue covering the fluorescent glue is formed on the metal etching sheet and cured.
本发明实施例于所述金属蚀刻片1上成型覆盖所述荧光胶4的透明封装胶(如透明硅胶)7并使之固化,如图11、12所示。其中,所述透明封装胶7还填充于第一半蚀刻槽2。为增强LED产品的光斑均匀性,于所述透明封装胶7内掺杂一定比例的二氧化硅粉末。此外,各LED 8上表面由所述透明封装胶7成型为弧面。同样地,因所述透明封装胶7具有一定粘度及表面张力,其不会沿所述第一半蚀刻槽2往外流。In the embodiment of the present invention, a transparent packaging glue (such as transparent silica gel) 7 covering the fluorescent glue 4 is molded on the metal etching sheet 1 and cured, as shown in FIGS. 11 and 12 . Wherein, the transparent encapsulant 7 is also filled in the first half-etched groove 2 . In order to enhance the light spot uniformity of LED products, a certain proportion of silicon dioxide powder is doped in the transparent packaging glue 7 . In addition, the upper surface of each LED 8 is formed into an arc surface by the transparent packaging glue 7 . Likewise, because the transparent encapsulant 7 has certain viscosity and surface tension, it will not flow out along the first half etching groove 2 .
在步骤S405中,于所述金属蚀刻片底部蚀刻与第一半蚀刻槽相通的第二半蚀刻槽。In step S405 , a second half-etched groove communicating with the first half-etched groove is etched on the bottom of the etched metal sheet.
为完全分离正、负极,且保证LED产品底部的正、负极之间的距离适合于贴片焊接。此处于所述金属蚀刻片1底部蚀刻与第一半蚀刻槽2相通的第二半蚀刻槽9,如图13所示。其中,所述第二半蚀刻槽9的宽度(0.2~0.5mm)大于第一半蚀刻槽2的宽度,所述第二半蚀刻槽2两旁的金属蚀刻片分别用作LED8的正、负极。应当说明的是,所述第一半蚀刻槽2和第二半蚀刻槽9构成了前述“凸”形贯穿槽。In order to completely separate the positive and negative poles, and ensure that the distance between the positive and negative poles at the bottom of the LED product is suitable for patch welding. Here, the second half-etched groove 9 communicating with the first half-etched groove 2 is etched at the bottom of the metal etching sheet 1 , as shown in FIG. 13 . Wherein, the width (0.2-0.5 mm) of the second half-etched groove 9 is larger than that of the first half-etched groove 2 , and the metal etching sheets on both sides of the second half-etched groove 2 are respectively used as positive and negative poles of the LED 8 . It should be noted that the first half-etched groove 2 and the second half-etched groove 9 constitute the aforementioned "convex" shaped through groove.
在步骤S406中,切割出各LED。In step S406, each LED is cut out.
本发明实施例在切割出各LED 8之前,于所述第二半蚀刻槽9内填充防焊材料10(如防焊硅胶),如图14~16所示。首先有助于LED 8正、负极金属片的粘接,提升整个LED 8的可靠性;其次保证了应用端焊锡膏不会短路。In the embodiment of the present invention, before cutting out each LED 8 , a solder resist material 10 (such as solder resist silica gel) is filled in the second half-etched groove 9 , as shown in FIGS. 14-16 . Firstly, it helps the bonding of the positive and negative metal sheets of the LED 8 and improves the reliability of the entire LED 8; secondly, it ensures that the solder paste at the application end will not be short-circuited.
图17示出了本发明第二实施例提供的LED封装方法的实现流程,详述如下。Fig. 17 shows the implementation flow of the LED packaging method provided by the second embodiment of the present invention, which is described in detail as follows.
在步骤S1701中,于金属蚀刻片上蚀刻多条平行的蚀刻槽,所述蚀刻槽贯穿金属蚀刻片,其下部宽度大于上部宽度,所述金属蚀刻片的边缘完好。In step S1701, a plurality of parallel etching grooves are etched on the etched metal sheet, the etching grooves run through the etched metal sheet, the width of the lower part is greater than the width of the upper part, and the edges of the etched metal sheet are intact.
本发明实施例于金属蚀刻片1上蚀刻多条相互平行的蚀刻槽,所述蚀刻槽贯穿金属蚀刻片1,其下部9宽度大于上部2宽度,所述金属蚀刻片的边缘10完好。作为优选,所述蚀刻槽上部2的宽度等于LED覆晶晶片3正、负极间的最短距离,便于后续工序焊接所述LED覆晶晶片3,所述蚀刻槽上部2的深度略大于LED覆晶晶片3正、负极间的最短距离,如图18、19所示。其中,所述金属蚀刻片1的厚度优选为0.05~0.5mm。因所制LED产品尺寸决定于蚀刻片的正、负极的尺寸,这样易于制成与常规LED封装产品同等大小的蚀刻片支架的封装产品。In the embodiment of the present invention, a plurality of parallel etching grooves are etched on the metal etching sheet 1, the etching grooves run through the metal etching sheet 1, the width of the lower part 9 is greater than that of the upper part 2, and the edge 10 of the metal etching sheet is intact. Preferably, the width of the upper part 2 of the etching groove is equal to the shortest distance between the positive and negative electrodes of the LED flip-chip chip 3, which is convenient for welding the LED flip-chip chip 3 in the subsequent process, and the depth of the upper part 2 of the etching groove is slightly larger than that of the LED flip-chip chip. The shortest distance between the positive and negative poles of the wafer 3 is shown in Figures 18 and 19. Wherein, the thickness of the metal etching sheet 1 is preferably 0.05-0.5 mm. Because the size of the manufactured LED product is determined by the size of the positive and negative electrodes of the etched sheet, it is easy to make a packaged product of the etched sheet bracket with the same size as the conventional LED packaged product.
在步骤S1702中,将LED覆晶晶片的正、负电极分别焊接于所述蚀刻槽上部的两旁。In step S1702, the positive and negative electrodes of the LED flip chip are soldered to both sides of the upper part of the etching groove respectively.
本发明实施例先获取多个LED覆晶晶片3,然后将各LED覆晶晶片3的正、负电极共晶焊于所述蚀刻槽上部2的两旁,如图20、21所示。应当说明的是,所述LED覆晶晶片3的正、负电极均位于其底部,其中一个为正电极,另一个为负电极。In the embodiment of the present invention, a plurality of LED flip-chip chips 3 are obtained first, and then the positive and negative electrodes of each LED flip-chip chip 3 are eutectically soldered to both sides of the upper part 2 of the etching groove, as shown in FIGS. 20 and 21 . It should be noted that the positive and negative electrodes of the LED flip chip 3 are located at the bottom thereof, one of which is a positive electrode and the other is a negative electrode.
在步骤S1703中,于所述金属蚀刻片上涂覆覆盖LED覆晶晶片的荧光胶并使之固化。In step S1703 , coating the fluorescent glue covering the LED chip on chip on the metal etching sheet and curing it.
本发明实施例于所述金属蚀刻片1上涂覆覆盖LED覆晶晶片3的荧光胶4并使之固化,如图22~25所示。具体地,申请人可采用其在文献号为CN102544260A的专利申请文件中公开的在LED覆晶晶片表面涂覆荧光胶的方法。如果采用凹槽规范所述荧光胶4,在蚀刻所述蚀刻槽2时,于固设所述LED覆晶晶片3的区域周围蚀刻出凹槽6,如图24、25所示。其中,所述荧光胶4的厚度优选为0.03~0.5mm。因所述荧光胶4具有一定粘度及表面张力,其不会沿所述蚀刻槽2朝下或往外流。In the embodiment of the present invention, the fluorescent glue 4 covering the LED chip-on-chip 3 is coated on the metal etching sheet 1 and cured, as shown in FIGS. 22-25 . Specifically, the applicant can adopt the method of coating fluorescent glue on the surface of the LED flip chip disclosed in the patent application document with the document number CN102544260A. If grooves are used to standardize the fluorescent glue 4 , when etching the etching groove 2 , grooves 6 are etched around the area where the LED flip chip 3 is fixed, as shown in FIGS. 24 and 25 . Wherein, the thickness of the fluorescent glue 4 is preferably 0.03-0.5 mm. Because the fluorescent glue 4 has a certain viscosity and surface tension, it will not flow down or out along the etching groove 2 .
在步骤S1704中,于所述金属蚀刻片下表面贴设胶带。In step S1704, an adhesive tape is pasted on the lower surface of the etched metal sheet.
本发明实施例为保护金属蚀刻片1底部金属层,防止其粘接后续工序的透明硅胶,在所述金属蚀刻片1下表面黏贴能耐高温(150℃,硅胶烘烤温度)的胶带5,如图26所示。The embodiment of the present invention is to protect the metal layer at the bottom of the etched metal sheet 1 and prevent it from adhering to the transparent silica gel in the subsequent process. On the lower surface of the etched metal sheet 1, stick an adhesive tape 5 that can withstand high temperature (150°C, the baking temperature of silica gel), As shown in Figure 26.
在步骤S1705中,于所述金属蚀刻片上成型覆盖所述荧光胶的透明封装胶,所述透明封装胶由胶带阻拦,使之填充于所述蚀刻槽,而后固化所述透明封装胶。In step S1705 , forming a transparent encapsulation glue covering the fluorescent glue on the etched metal sheet, the transparent encapsulation glue is blocked by an adhesive tape to fill the etching groove, and then the transparent encapsulation glue is cured.
本发明实施例于所述金属蚀刻片1上成型覆盖所述荧光胶4的透明封装胶(如透明硅胶)7并使之固化,如图27、28所示。其中,所述透明封装胶7还填充于蚀刻槽,并由所述胶带5阻拦。为增强LED产品的光斑均匀性,于所述透明封装胶7内掺杂一定比例的二氧化硅粉末。此外,各LED 8上表面由所述透明封装胶7成型为弧面。同样地,因所述透明封装胶7具有一定粘度及表面张力,其不会沿所述蚀刻槽上部2往外流。In the embodiment of the present invention, a transparent packaging glue (such as transparent silica gel) 7 covering the fluorescent glue 4 is molded on the metal etching sheet 1 and cured, as shown in FIGS. 27 and 28 . Wherein, the transparent encapsulant 7 is also filled in the etching groove and blocked by the adhesive tape 5 . In order to enhance the light spot uniformity of LED products, a certain proportion of silicon dioxide powder is doped in the transparent packaging glue 7 . In addition, the upper surface of each LED 8 is formed into an arc surface by the transparent packaging glue 7 . Likewise, because the transparent encapsulant 7 has a certain viscosity and surface tension, it will not flow out along the upper part 2 of the etching groove.
在步骤S1706中,移除所述金属蚀刻片边缘及胶带,切割出各LED,所述蚀刻槽两旁的金属蚀刻片分别用作LED的正、负极。In step S1706, the edge of the metal etching sheet and the adhesive tape are removed, and each LED is cut out, and the metal etching sheets on both sides of the etching groove are respectively used as positive and negative electrodes of the LED.
如图29、30所示,本发明实施例先撕去所述胶带5,然后切除所述金属蚀刻片边缘10,使各LED 8正、负极完全分离,最后按照图30所示切割线11切割出各LED 8。切割后,所述蚀刻槽两旁的金属蚀刻片分别用作LED 8的正、负极。应当说明的是,所述蚀刻槽为前述“凸”形贯穿槽。As shown in Figures 29 and 30, in the embodiment of the present invention, the adhesive tape 5 is torn off first, and then the edge 10 of the metal etching sheet is cut off to completely separate the positive and negative poles of each LED 8, and finally cut according to the cutting line 11 shown in Figure 30 8 out of each LED. After cutting, the metal etching sheets on both sides of the etching groove are used as the positive and negative poles of the LED 8 respectively. It should be noted that the etching groove is the aforementioned "convex" shaped through groove.
综上,本发明实施例提供的LED封装方法具有如下优点:To sum up, the LED packaging method provided by the embodiment of the present invention has the following advantages:
1、LED覆晶晶片底部电极共晶于金属蚀刻片上,封装工艺制程稳定、方便;1. The bottom electrode of the LED flip-chip chip is eutectic on the metal etching chip, and the packaging process is stable and convenient;
2、涂覆、成型荧光胶和透明封装胶在金属蚀刻片上进行,物料利用率高,降低封装成本;2. Coating and molding fluorescent glue and transparent packaging glue are carried out on the metal etching sheet, which has high material utilization rate and reduces packaging cost;
3、由此封装而成的LED仅由硅胶、金属电极片、覆晶晶片及涂覆在晶片表面的荧光胶,物料简单、稳定,相应地LED产品可靠性佳。3. The LED packaged in this way only consists of silica gel, metal electrode sheets, flip chip and fluorescent glue coated on the surface of the chip. The materials are simple and stable, and the reliability of LED products is correspondingly good.
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.
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