CN103839861B - Multiple overprint alignment method for fine grids on the surface of solar cells - Google Patents
Multiple overprint alignment method for fine grids on the surface of solar cells Download PDFInfo
- Publication number
- CN103839861B CN103839861B CN201410098396.8A CN201410098396A CN103839861B CN 103839861 B CN103839861 B CN 103839861B CN 201410098396 A CN201410098396 A CN 201410098396A CN 103839861 B CN103839861 B CN 103839861B
- Authority
- CN
- China
- Prior art keywords
- printed
- position identification
- printing
- point
- identification point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 210000004027 cell Anatomy 0.000 claims abstract 5
- 239000007787 solid Substances 0.000 claims description 21
- 235000012431 wafers Nutrition 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000004587 chromatography analysis Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
- B41M3/008—Sequential or multiple printing, e.g. on previously printed background; Mirror printing; Recto-verso printing; using a combination of different printing techniques; Printing of patterns visible in reflection and by transparency; by superposing printed artifacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Printing Methods (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种用于太阳能电池表面细栅的多次套印对准方法,属于太阳能电池技术领域。The invention relates to a multi-overprint alignment method for fine grids on the surface of solar cells, belonging to the technical field of solar cells.
背景技术Background technique
目前,为提高太阳能电池的电池转化效率,电池正面电极印刷已采用叠层印刷,一方面结合窄线宽设计可明显降低线宽,增大电池受光面积;一方面可提高栅线高度,有效降低电池的线电阻,提高电池效率。At present, in order to improve the cell conversion efficiency of solar cells, the front electrode of the cell has been printed by stacked printing. The line resistance of the battery improves battery efficiency.
目前叠层印刷产业化技术只有单次印刷和二次印刷,加之行业内叠层印刷设备精度±15um,为实现第二次印刷能精确覆盖在第一层印刷电极之上,现有对准方式主要通过在印刷图形上增加一套位置识别点(一套4个位置识别点)进行套印对准,为避免造成电池外观异常,位置识别点位置只能位于电池片主栅上,若进行二次以上的套印,可采取两套以上位置识别点对准,但是由于相机视野范围有限(2cm*2cm),同时进入相机视野范围内的位置识别点大于1个,设备将无法识别,所以仅通过增加位置识别点的数量,无法实现多次叠层印刷。At present, the industrialization technology of overlay printing only has single printing and two-time printing. In addition, the precision of overlay printing equipment in the industry is ±15um. In order to realize that the second printing can accurately cover the first layer of printed electrodes, the existing alignment method Mainly by adding a set of position identification points (a set of 4 position identification points) on the printed graphics for overprint alignment, in order to avoid abnormal appearance of the battery, the position identification points can only be located on the main grid of the cell. For the above overprinting, more than two sets of position recognition points can be used for alignment, but due to the limited field of view of the camera (2cm*2cm), and more than one position recognition point entering the field of view of the camera at the same time, the device will not be able to recognize it, so only by adding The number of position identification points cannot achieve multiple overlay printing.
发明内容Contents of the invention
本发明所要解决的技术问题是克服现有技术的缺陷,提供一种用于太阳能电池表面细栅的多次套印对准方法,它能够实现太阳能电池表面细栅的多次叠层印刷,从而提高太阳能电池的电池转化效率。The technical problem to be solved by the present invention is to overcome the defects of the prior art, and provide a multiple overprint alignment method for the fine grid on the surface of the solar cell, which can realize multiple stack printing of the fine grid on the surface of the solar cell, thereby improving Cell conversion efficiency of solar cells.
为了解决上述技术问题,本发明的技术方案是:一种用于太阳能电池表面细栅的多次套印对准方法,该方法的步骤如下:In order to solve the above technical problems, the technical solution of the present invention is: a multiple overprint alignment method for the surface fine grid of solar cells, the steps of the method are as follows:
a)依次制备N套印刷电极的印刷图形,其用于依次对太阳能电池表面细栅进行N次叠层印刷;其中,N≥2,每个印刷图形在相同位置上设置有相对应的位置识别点,并且,印刷图形上的位置识别点内具有呈空白状的前面使用的印刷图形上的位置识别点重合后的图形;a) Sequentially prepare N sets of printed patterns of printed electrodes, which are used to sequentially print N times of laminated grids on the surface of solar cells; wherein, N≥2, each printed pattern is provided with a corresponding position identification at the same position point, and the position identification point on the printed graphic has a figure in which the position identification point on the previously used printed graphic is overlapped in a blank state;
b)通过印刷设备依次采用步骤a)中的印刷图形对硅片进行印刷,并且在相邻次的印刷过程中,通过印刷设备定位前次印刷后的硅片上重合在一起的位置识别点的坐标位置,并在后次印刷过程中,调整硅片的横向位置、纵向位置和角度方向,使硅片上的位置识别点和后次使用的印刷图形上的位置识别点的空白部分重合。b) Use the printing equipment to print the silicon wafer sequentially using the printing graphics in step a), and in the adjacent printing process, use the printing equipment to locate the overlapping position identification points on the silicon wafer after the previous printing Coordinate position, and in the next printing process, adjust the horizontal position, vertical position and angular direction of the silicon wafer, so that the position identification point on the silicon wafer coincides with the blank part of the position identification point on the printed graphic used last time.
进一步,所述的N套印刷图形中,第一个印刷图形上的位置识别点为实心圆,第二个到第N-1个印刷图形上的位置识别点为圆环状,并且其中的后一个印刷图形上的位置识别点的内径等于前一个印刷图形上的位置识别点的外径,第N个印刷图形上的位置识别点为空心圆,并且空心圆的直径为第N-1个印刷图形上的位置识别点的外径。Further, among the N sets of printed graphics, the position identification points on the first printed graphic are solid circles, and the position identification points on the second to N-1th printed graphics are circular, and the latter The inner diameter of the position identification point on a printed graphic is equal to the outer diameter of the position identification point on the previous printed graphic, the position identification point on the Nth printed graphic is a hollow circle, and the diameter of the hollow circle is the N-1th printed The location on the drawing identifies the outer radius of the point.
进一步,所述的N套印刷图形中,第一个印刷图形上的位置识别点为实心圆,第二个印刷图形上的位置识别点为实心圆的外切正方形减去实心圆的图形,第三个印刷图形上的位置识别点为外切正方形的外切圆减去外切正方形的图形,依次类推直到第N-1个印刷图形上的位置识别点,第N个印刷图形上的位置识别点为空心正方形,并且该空心正方形与第N-1个印刷图形上的外切正方形相同。Further, in the N sets of printed graphics, the position identification point on the first printed graphic is a solid circle, and the position identification point on the second printed graphic is the circumscribed square of the solid circle minus the solid circle. The position identification points on the three printed graphics are the circumscribed circle of the circumscribed square minus the circumscribed square figure, and so on until the position identification point on the N-1th printed graphic, and the position identification point on the Nth printed graphic The point is a hollow square, and this hollow square is the same as the circumscribed square on the N-1th printed figure.
采用了上述技术方案后,本发明具有以下的有益效果:After adopting above-mentioned technical scheme, the present invention has following beneficial effect:
1、通过该方法解决了多次叠层印刷相机对准问题,在现有硬件环境下可实现≥2次叠层印刷;1. Through this method, the camera alignment problem of multiple overlay printing is solved, and ≥2 times of overlay printing can be realized under the existing hardware environment;
2、通过该方法降低了太阳能电池的细栅宽度,使电池表面受光面积增大,有利于提高电池效率;2. The thin grid width of the solar cell is reduced by this method, and the light-receiving area on the surface of the cell is increased, which is conducive to improving the efficiency of the cell;
3、通过该方法增加了细栅高度,获得了较高的高宽比,有效地降低了电池片的线电阻,从而提高了电池效率;3. The height of the fine grid is increased by this method, a higher aspect ratio is obtained, and the line resistance of the cell is effectively reduced, thereby improving the cell efficiency;
4、多次套印匹配窄线宽,外观上可有效减少虚印、断栅比例。4. Multiple overprints match the narrow line width, which can effectively reduce the proportion of virtual printing and broken grids in appearance.
附图说明Description of drawings
图1为本发明的实施例一中五次套印中的第一次套印的印刷图形的示意图;Fig. 1 is the schematic diagram of the printed figure of the first overprint in the five overprints in Embodiment 1 of the present invention;
图2为本发明的实施例一中五次套印中的第二次套印的印刷图形的示意图;Fig. 2 is the schematic diagram of the printed pattern of the second overprint in the five overprints in Embodiment 1 of the present invention;
图3为本发明的实施例一中五次套印中的第三次套印的印刷图形的示意图;Fig. 3 is the schematic diagram of the printed figure of the third overprint in the five overprints in Embodiment 1 of the present invention;
图4为本发明的实施例一中五次套印中的第四次套印的印刷图形的示意图;Fig. 4 is the schematic diagram of the printed pattern of the fourth overprint in the five overprints in Embodiment 1 of the present invention;
图5为本发明的实施例一中五次套印中的第五次套印的印刷图形的示意图;5 is a schematic diagram of the printed graphics of the fifth overprint in the five overprints in Embodiment 1 of the present invention;
图6为本发明的实施例二中五次套印中的第一次套印的印刷图形的示意图;Fig. 6 is a schematic diagram of the printed graphics of the first overprint in the five overprints in Embodiment 2 of the present invention;
图7为本发明的实施例二中五次套印中的第二次套印的印刷图形的示意图;Fig. 7 is a schematic diagram of the printed graphics of the second overprint in the five overprints in Embodiment 2 of the present invention;
图8为本发明的实施例二中五次套印中的第三次套印的印刷图形的示意图;Fig. 8 is a schematic diagram of the printed graphics of the third overprint in the five overprints in Embodiment 2 of the present invention;
图9为本发明的实施例二中五次套印中的第四次套印的印刷图形的示意图;Fig. 9 is a schematic diagram of the printed graphics of the fourth overprint in the five overprints in Embodiment 2 of the present invention;
图10为本发明的实施例二中五次套印中的第五次套印的印刷图形的示意图。Fig. 10 is a schematic diagram of the printed pattern of the fifth overprint in the five overprints in the second embodiment of the present invention.
具体实施方式detailed description
为了使本发明的内容更容易被清楚地理解,下面根据具体实施例,对本发明作进一步详细的说明。In order to make the content of the present invention more clearly understood, the present invention will be further described in detail below based on specific embodiments.
实施例一Embodiment one
一种用于太阳能电池表面细栅的多次套印对准方法,该方法的步骤如下:A multiple overprint alignment method for fine grids on the surface of solar cells, the steps of the method are as follows:
a)依次制备N套印刷电极的印刷图形,其用于依次对太阳能电池表面细栅进行N次叠层印刷;其中,N≥2,每个印刷图形在相同位置上设置有相对应的位置识别点,并且,印刷图形上的位置识别点内具有呈空白状的前面使用的印刷图形上的位置识别点重合后的图形;a) Sequentially prepare N sets of printed patterns of printed electrodes, which are used to sequentially print N times of laminated grids on the surface of solar cells; wherein, N≥2, each printed pattern is provided with a corresponding position identification at the same position point, and the position identification point on the printed graphic has a figure in which the position identification point on the previously used printed graphic is overlapped in a blank state;
b)通过印刷设备依次采用步骤a)中的印刷图形对硅片进行印刷,并且在相邻次的印刷过程中,通过印刷设备定位前次印刷后的硅片上重合在一起的位置识别点的坐标位置,并在后次印刷过程中,调整硅片的横向位置、纵向位置和角度方向,使硅片上的位置识别点和后次使用的印刷图形上的位置识别点的空白部分重合。b) Use the printing equipment to print the silicon wafer sequentially using the printing graphics in step a), and in the adjacent printing process, use the printing equipment to locate the overlapping position identification points on the silicon wafer after the previous printing Coordinate position, and in the next printing process, adjust the horizontal position, vertical position and angular direction of the silicon wafer, so that the position identification point on the silicon wafer coincides with the blank part of the position identification point on the printed graphic used last time.
N套印刷图形中,第一个印刷图形上的位置识别点为实心圆,第二个到第N-1个印刷图形上的位置识别点为圆环状,并且其中的后一个印刷图形上的位置识别点的内径等于前一个印刷图形上的位置识别点的外径,第N个印刷图形上的位置识别点为空心圆,并且空心圆的直径为第N-1个印刷图形上的位置识别点的外径。In N sets of printed graphics, the position identification point on the first printed graphic is a solid circle, the position identification points on the second to N-1th printed graphics are circular, and the position identification points on the latter printed graphic are The inner diameter of the position identification point is equal to the outer diameter of the position identification point on the previous printed graphic, the position identification point on the Nth printed graphic is a hollow circle, and the diameter of the hollow circle is the position identification on the N-1th printed graphic The outer diameter of the point.
如图1~5所示,现以五次套印为例子:As shown in Figures 1~5, now take five overprints as an example:
第一次套印:采用位置识别点1-1为Φ0.3mm的实心圆的第一印刷图形1,制备第一次电极,第一次电极上也具有Φ0.3mm的实心圆的位置识别点;The first overprinting: using the first printing pattern 1 whose position identification point 1-1 is a solid circle of Φ0.3 mm to prepare the first electrode, the first electrode also has a position identification point of a solid circle of Φ0.3 mm;
第二次套印:采用位置识别点2-1为 内径Φ0.3mm、外径Φ0.4mm的圆环的第二印刷图形2,在第一次电极上制备第二次电极,第二次电极具有Φ0.4mm的实心圆的位置识别点;The second overprinting: the second printing pattern 2 of a circular ring with an inner diameter of Φ0.3mm and an outer diameter of Φ0.4mm is used at the position identification point 2-1, and the second electrode is prepared on the first electrode, and the second electrode has The position recognition point of the solid circle of Φ0.4mm;
第三次套印:采用位置识别点3-1为内径Φ0.4mm、外径Φ0.5mm的圆环的第三次印刷图形3,在第二次电极上制备第三次电极,第三次电极具有Φ0.5mm的实心圆的位置识别点;The third overprinting: use the position recognition point 3-1 as the third printing pattern 3 of a ring with an inner diameter of Φ0.4mm and an outer diameter of Φ0.5mm, prepare the third electrode on the second electrode, and the third electrode Position identification point with a solid circle of Φ0.5mm;
第四次套印:采用位置识别点4-1为内径Φ0.5mm、外径Φ0.6mm的圆环的第四次印刷图形4,在第三次电极上制备第四次电极,第四次电极具有Φ0.6mm的实心圆的位置识别点;The fourth overprinting: using the position recognition point 4-1 as the fourth printing pattern 4 of a ring with an inner diameter of Φ0.5mm and an outer diameter of Φ0.6mm, the fourth electrode is prepared on the third electrode, and the fourth electrode Position identification point with a solid circle of Φ0.6mm;
第五次套印:采用位置识别点5-1为Φ0.6mm的空心圆,获得完整的正面电极图形。The fifth overprinting: using a hollow circle with a position identification point 5-1 of Φ0.6 mm to obtain a complete front electrode pattern.
依次类推,按照相同的方法将位置识别点设计成圆环状,可实现2次以上的套印。By analogy, according to the same method, the position identification point is designed into a ring shape, which can realize more than two overprints.
实施例二Embodiment two
一种用于太阳能电池表面细栅的多次套印对准方法,该方法的步骤如下:A multiple overprint alignment method for fine grids on the surface of solar cells, the steps of the method are as follows:
a)依次制备N套印刷电极的印刷图形,其用于依次对太阳能电池表面细栅进行N次叠层印刷;其中,N≥2,每个印刷图形在相同位置上设置有相对应的位置识别点,并且,印刷图形上的位置识别点内具有呈空白状的前面使用的印刷图形上的位置识别点重合后的图形;a) Sequentially prepare N sets of printed patterns of printed electrodes, which are used to sequentially print N times of laminated grids on the surface of solar cells; wherein, N≥2, each printed pattern is provided with a corresponding position identification at the same position point, and the position identification point on the printed graphic has a figure in which the position identification point on the previously used printed graphic is overlapped in a blank state;
b)通过印刷设备依次采用步骤a)中的印刷图形对硅片进行印刷,并且在相邻次的印刷过程中,通过印刷设备定位前次印刷后的硅片上重合在一起的位置识别点的坐标位置,并在后次印刷过程中,调整硅片的横向位置、纵向位置和角度方向,使硅片上的位置识别点和后次使用的印刷图形上的位置识别点的空白部分重合。b) Use the printing equipment to print the silicon wafer sequentially using the printing graphics in step a), and in the adjacent printing process, use the printing equipment to locate the overlapping position identification points on the silicon wafer after the previous printing Coordinate position, and in the next printing process, adjust the horizontal position, vertical position and angular direction of the silicon wafer, so that the position identification point on the silicon wafer coincides with the blank part of the position identification point on the printed graphic used last time.
N套印刷图形中,第一个印刷图形上的位置识别点为实心圆,第二个印刷图形上的位置识别点为实心圆的外切正方形减去实心圆的图形,第三个印刷图形上的位置识别点为外切正方形的外切圆减去外切正方形的图形,依次类推直到第N-1个印刷图形上的位置识别点,第N个印刷图形上的位置识别点为空心正方形,并且该空心正方形与第N-1个印刷图形上的外切正方形相同。In N sets of printed graphics, the position identification point on the first printed graphic is a solid circle, the position identification point on the second printed graphic is the circumscribed square of the solid circle minus the solid circle, and the third printed graphic The position identification point is the circumscribed circle of the circumscribed square minus the figure of the circumscribed square, and so on until the position identification point on the N-1th printed graphic, the position identified point on the Nth printed graphic is a hollow square, And the hollow square is the same as the circumscribed square on the N-1th printed figure.
如图6~10所示,现以五次套印为例子:As shown in Figures 6~10, now take five overprints as an example:
第一次套印:采用位置识别点6-1为Φ0.3mm的实心圆的一次印刷图形6,制备第一次电极,第一次电极上也具有Φ0.3mm的实心圆的位置识别点;The first overprinting: the first printing pattern 6 with the solid circle of Φ0.3 mm as the position recognition point 6-1 is used to prepare the first electrode, and the position recognition point of the solid circle of Φ0.3 mm is also provided on the first electrode;
第二次套印:采用位置识别点7-1为边长0.3mm的正方形减去其内切圆部分的图形的二次印刷图形7,在第一次电极上制备第二次电极,第二次电极具有边长0.3mm的实心正方形的位置识别点;The second overprinting: use the position recognition point 7-1 as a square with a side length of 0.3mm minus the second printing pattern 7 of the figure of the inscribed circle part, prepare the second electrode on the first electrode, and prepare the second electrode on the second electrode. The electrode has a solid square position identification point with a side length of 0.3mm;
第三次套印:采用位置识别点8-1为Φ0.3mm的实心圆减去其内接正方形部分的图形的三次印刷图形8,在第二次电极上制备第三次电极,第三次电极具有Φ0.3mm的实心圆的实心正方形的位置识别点;The third overprinting: use position identification point 8-1 as Φ0.3 The solid circle of mm minus the three-time printing pattern 8 of the figure inscribed in the square part, the third electrode is prepared on the second electrode, and the third electrode has Φ0.3 The position identification point of the filled square of the filled circle in mm;
第四次套印:采用位置识别点9-1为Φ0.3mm的正方形减去其内切圆部分的图形的四次印刷图形9,在第三次电极上制备第四次电极,第四次电极具有Φ0.3mm的实心正方形的位置识别点;The fourth overprinting: use position identification point 9-1 as Φ0.3 The square of mm minus its inscribed circle part is printed four times 9, and the fourth electrode is prepared on the third electrode, and the fourth electrode has Φ0.3 The position identification point of the solid square in mm;
第五次套印:采用位置识别点10-1为Φ0.3mm的空心正方形,获得完整的正面电极图形。The fifth overprinting: use position recognition point 10-1 as Φ0.3 mm hollow square to obtain a complete frontal electrode pattern.
依次类推,按照相同的方法将位置识别点设计成正方形与圆交并图形,可实现2次以上的套印。By analogy, according to the same method, the position recognition point is designed as a square and circle intersection and merged figure, which can realize more than 2 overprints.
以上所述的具体实施例,对本发明解决的技术问题、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above have further described the technical problems, technical solutions and beneficial effects solved by the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410098396.8A CN103839861B (en) | 2014-03-18 | 2014-03-18 | Multiple overprint alignment method for fine grids on the surface of solar cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410098396.8A CN103839861B (en) | 2014-03-18 | 2014-03-18 | Multiple overprint alignment method for fine grids on the surface of solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103839861A CN103839861A (en) | 2014-06-04 |
CN103839861B true CN103839861B (en) | 2016-11-16 |
Family
ID=50803238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410098396.8A Active CN103839861B (en) | 2014-03-18 | 2014-03-18 | Multiple overprint alignment method for fine grids on the surface of solar cells |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103839861B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105599431A (en) * | 2016-01-08 | 2016-05-25 | 上海艾力克新能源有限公司 | Crystalline silicon solar cell secondary printing front face electrode overprinting screen printing plate graph structure |
CN106891629A (en) * | 2017-02-06 | 2017-06-27 | 苏州润阳光伏科技有限公司 | A kind of grid line printing process of solar cell |
CN109203744A (en) * | 2018-08-07 | 2019-01-15 | 天津英利新能源有限公司 | A kind of the printing-sintering method and examination criteria of black silion cell |
CN110010708A (en) * | 2019-03-29 | 2019-07-12 | 泰州隆基乐叶光伏科技有限公司 | a solar cell |
CN110739355A (en) * | 2019-10-11 | 2020-01-31 | 东莞南玻光伏科技有限公司 | Solar cell and manufacturing method thereof |
TWI845216B (en) * | 2023-03-21 | 2024-06-11 | 聯合再生能源股份有限公司 | Manufacturing method for electrode structure of solar cell |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101646304A (en) * | 2008-08-05 | 2010-02-10 | 比亚迪股份有限公司 | Alignment method for printed circuit board |
CN201947553U (en) * | 2010-06-24 | 2011-08-24 | 胜宏科技(惠州)有限公司 | Supplementary structure for detecting layer to layer registration of PCB (printed circuit board) |
CN102325654A (en) * | 2009-02-23 | 2012-01-18 | 应用材料公司 | Screen printing method and equipment for multi-layer patterns |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5488015B2 (en) * | 2009-02-10 | 2014-05-14 | 信越化学工業株式会社 | Screen printing method |
JP5895275B2 (en) * | 2011-11-02 | 2016-03-30 | 株式会社ブイ・テクノロジー | Alignment mark and exposure apparatus |
-
2014
- 2014-03-18 CN CN201410098396.8A patent/CN103839861B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101646304A (en) * | 2008-08-05 | 2010-02-10 | 比亚迪股份有限公司 | Alignment method for printed circuit board |
CN102325654A (en) * | 2009-02-23 | 2012-01-18 | 应用材料公司 | Screen printing method and equipment for multi-layer patterns |
CN201947553U (en) * | 2010-06-24 | 2011-08-24 | 胜宏科技(惠州)有限公司 | Supplementary structure for detecting layer to layer registration of PCB (printed circuit board) |
Also Published As
Publication number | Publication date |
---|---|
CN103839861A (en) | 2014-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103839861B (en) | Multiple overprint alignment method for fine grids on the surface of solar cells | |
CN103286767B (en) | A kind of layout for drilling method of skin part | |
WO2020001098A1 (en) | Touch panel and touch display device | |
CN102101396A (en) | Method for aligning metal grid line in solar cell metallization process | |
CN105225996B (en) | IGBT device back process with diode-built-in | |
CN204249527U (en) | Screen process press and printing screen plate thereof | |
CN102768586A (en) | Touch panel and manufacturing method thereof | |
CN102602183B (en) | Printing method for positive electrode of selective emitter cell | |
CN105047674B (en) | Array substrate and preparation method thereof and display device | |
CN204230221U (en) | Optical fingerprint sensor chip package glass raster | |
CN203134813U (en) | Flexible silicon-based film solar cell | |
JP2006041322A5 (en) | ||
US11581502B2 (en) | Method of making a current collecting grid for solar cells | |
CN104932212B (en) | Layout of electron beam lithography alignment marks on a chip | |
CN118366910A (en) | Positioning method for silicon wafer center | |
CN203894782U (en) | chip card combination structure | |
CN100590833C (en) | Test method for epitaxial film thickness | |
CN214588870U (en) | A thin-film solar cell structure based on different scribe lines | |
CN205836207U (en) | Solaode substep printing main grid web plate | |
CN210006745U (en) | structure for improving double-sided battery back printing | |
CN103928538A (en) | Monocrystalline silicon solar cells | |
CN203300684U (en) | A crystalline silicon solar cell sheet multipurpose series welding template | |
JP2013171943A5 (en) | ||
CN102693027A (en) | Touch panel with insulator and manufacturing method of touch panel | |
CN202399620U (en) | Standard sheet for alignment of selective emitter (SE) process printing positive electrodes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
CP03 | Change of name, title or address |