CN103824920A - Manufacturing method of light emitting diode with independent adjustable output power and spectrum shape - Google Patents
Manufacturing method of light emitting diode with independent adjustable output power and spectrum shape Download PDFInfo
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- CN103824920A CN103824920A CN201410083290.0A CN201410083290A CN103824920A CN 103824920 A CN103824920 A CN 103824920A CN 201410083290 A CN201410083290 A CN 201410083290A CN 103824920 A CN103824920 A CN 103824920A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/042—Superluminescent diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
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Abstract
一种输出功率和光谱形状独立可调的发光二极管的制作方法，包括：在衬底上依次生长缓冲层、n型掺杂的折射率渐变层、n型掺杂的下包层、n型掺杂的下波导层、有源区、p型掺杂的上波导层、p型掺杂的上包层、p型掺杂的折射率渐变层和p型重掺杂接触层，形成外延片；在外延片上向下刻蚀，形成凸起漏斗型台面；在其上表面生长绝缘介质膜，刻蚀绝缘介质膜，在外延片上面制备p型电极；在其上横向刻蚀出两个电隔离区，使其被分割成三个功能区，完成制备。本发明可实现器件在实际应用中可以在保持输出光谱形状基本不变的条件下在一定范围内调节其输出功率大小。
A method for manufacturing a light-emitting diode with independently adjustable output power and spectral shape, comprising: sequentially growing a buffer layer, an n-type doped refractive index gradient layer, an n-type doped lower cladding layer, and an n-type doped Doped lower waveguide layer, active region, p-type doped upper waveguide layer, p-type doped upper cladding layer, p-type doped refractive index gradient layer and p-type heavily doped contact layer to form an epitaxial wafer; Etch downward on the epitaxial wafer to form a raised funnel-shaped mesa; grow an insulating dielectric film on its upper surface, etch the insulating dielectric film, and prepare a p-type electrode on the epitaxial wafer; etch two electrical isolation on it laterally area so that it is divided into three functional areas to complete the preparation. The invention can realize that the output power of the device can be adjusted within a certain range under the condition of keeping the shape of the output spectrum basically unchanged in practical application.
Description
Technical field
The present invention relates to semiconductor opto-electronics materials and devices technical field, especially for the manufacture method of super-radiance light emitting diode, relate in particular to the manufacture method of the independent adjustable light-emitting diode of a kind of power output and spectral shape.
Background technology
Semiconductor super-radiation light emitting diode (SLD) is a kind of incoherent wideband light source with interior gain, and its optical characteristics is between semiconductor laser (LD) and light-emitting diode (LED).It has the features such as high-power, wide spectrum, weak temporal coherence and high optical coupling efficiency, aspect fibre optic gyroscope, optical test equipment, optical fiber sensing system, optical fiber telecommunications system, optical tomography, is having a wide range of applications.Although developed the super-radiance light emitting diode of a variety of different structures at present, its great majority are mainly stress to suppress light feedback or widen spectrum spectrum width.And be only also the size by regulating Injection Current for the control of device power output, be difficult to guarantee so on the one hand the shape of output spectrum, cannot realize on the other hand the independent regulation of power output and spectral shape.
Based on pertinent literature (Qi An et al.The effect of double-pass gain on the performances of a quantum-dot superluminescent diode integrated with a semiconductor optical amplifier, J.Lightw.Technol., 2012,30 (16): 2684-2688) there is the working mechanism of double-pass gain in the integrated two-region SLD in the inclination bar shaped superradiance district of report and taper light amplification district, the present invention, by increasing by a uptake zone, applies reversed bias voltage to it when work.By regulating uptake zone reversed bias voltage size to control the size of light feedback intensity, by regulating the size of two current injection area electric currents to guarantee the shape of output spectrum, thus the power output while realizing device work and the independent regulation of spectral shape.In actual applications, can realize and keep regulating within the specific limits its power output size under the substantially constant condition of output spectrum shape.
Summary of the invention
The object of the invention is to, the manufacture method of the independent adjustable light-emitting diode of a kind of power output and spectral shape is provided, and it can realize device can keep regulating within the specific limits its power output size under the substantially constant condition of output spectrum shape in actual applications.
The manufacture method that the invention provides the independent adjustable light-emitting diode of a kind of power output and spectral shape, its making step is specific as follows:
Step 1: the upper ducting layer that the under-clad layer of the graded-index layer of grown buffer layer, N-shaped doping, N-shaped doping, the lower waveguide layer of N-shaped doping, active area, p-type are adulterated successively on substrate, the top covering of p-type doping, graded-index layer and the p-type heavy doping contact layer of p-type doping, form epitaxial wafer;
Step 2: carry out etching downwards on the p-type heavy doping contact layer of epitaxial wafer, etching depth arrives the upper ducting layer of p-type doping or the lower waveguide layer of N-shaped doping, produce protruding funnel type table top, the center line of funnel type table top is α with respect to the angle of the longitudinal centre line of epitaxial wafer; The taper subtended angle of funnel type table top is β;
Step 3: producing the upper surface growth dielectric insulating film of epitaxial wafer of funnel type table top, then on dielectric insulating film, carry out etching, remove the dielectric insulating film of funnel type table top mid portion, retain the dielectric insulating film of funnel type mesa edge part, on funnel type table top, produce electrode window through ray;
Step 4: prepare p-type electrode on have the epitaxial wafer of electrode window through ray;
Step 5: two electricity isolated regions of lateral etching on the epitaxial wafer that is prepared with p-type electrode, etching depth arrives the graded-index layer of p-type doping, makes funnel type table top be divided into three functional areas: uptake zone, superradiance district and amplification region;
Step 6: will prepare N-shaped electrode after the substrate of epitaxial wafer one side attenuate, polishing, form chip;
Step 7: chip is dissociated into tube core, and welding equipment encapsulation, completes preparation.
Beneficial effect of the present invention is: the manufacture method that the invention provides the independent adjustable light-emitting diode of a kind of power output and spectral shape, in actual applications, can realize and keep regulating within the specific limits its power output size under the substantially constant condition of output spectrum shape.Meanwhile, utilize the feature of taper amplification region structure to apply larger forward current to it and realize powerful output.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with the drawings and specific embodiments, the present invention will be further described, wherein:
Fig. 1 is preparation flow figure of the present invention;
Fig. 2 is device epitaxial slice grown junction composition provided by the invention;
Fig. 3 and Fig. 4 are the schematic diagram of preparation power output provided by the invention and the independent adjustable high power semi-conductor super-radiance light emitting diode device of spectral shape;
Fig. 5 is the structural representation of power output provided by the invention and the independent adjustable high power semi-conductor super-radiance light emitting diode device of spectral shape;
Schematic diagram when Fig. 6 is the independent adjustable high power semi-conductor super-radiance light emitting diode device work of power output provided by the invention and spectral shape.
Embodiment
The paper principle that realizes of the present invention below: the inner process that has a double-pass gain during for inclination bar shaped superradiance district and the integrated two-region superradiation light-emitting tube device work in taper light amplification district: the reverse light wave of a part being reflected by amplification region output end face is coupled into superradiance district by amplification region, after superradiance district end face reflection, turn back to amplification region, the gain of experience secondary, is amplified again.And superradiance district is for the feedback intensity difference of the light of different energy states, can change its feedback by the Injection Current that changes superradiance district, but like this output spectrum shape and power output are all had to impact, cannot realize the independent regulation of power output and spectral shape.And increase behind a uptake zone, when device work, apply reversed bias voltage to uptake zone, just can control the size of light feedback intensity by regulating reversed bias voltage size, by regulating the size of two current injection area electric currents to guarantee the spectrum shape of output spectrum, keeping regulating within the specific limits its power output size under the substantially constant condition of output spectrum shape thereby realize.Meanwhile, utilize the feature of taper amplification region structure to apply larger forward current to it and realize powerful output.
Refer to shown in Fig. 1, Fig. 2 Fig. 5, based on above-mentioned principle, the invention provides the manufacture method of the independent adjustable light-emitting diode of a kind of power output and spectral shape, its making step is specific as follows:
Step 1: adopt epitaxy technology on substrate 101, as molecular beam epitaxy technique or metal organic chemical vapor deposition technology, graded-index layer 109 and the p-type heavy doping contact layer 110 of the top covering 108 of the upper ducting layer 107 of the lower waveguide layer 105 of the under-clad layer 104 of the graded-index layer 103 of grown buffer layer 102, N-shaped doping, N-shaped doping, N-shaped doping, active area 106, p-type doping, p-type doping, p-type doping, form epitaxial wafer 1 successively; Wherein said substrate 101 is GaAs material or InP material, and active area 106 is quantum dot or quantum well, and p-type heavy doping contact layer 110 thickness are generally hundreds of nanometers, and doping content is generally greater than 1*10
19cm
-3;
Step 2: carry out etching downwards on the p-type heavy doping contact layer 110 of epitaxial wafer 1, described etching can be wet etching or dry etching, and the masking layer of wet etching can be selected photoresist, and the masking layer of dry etching can be selected silicon dioxide; Etching depth arrives the upper ducting layer 107 of p-type doping or the lower waveguide layer 105 of N-shaped doping, wherein the light loss of the device of the upper ducting layer 107 of etching depth arrival p-type doping is less, the light restriction of the device of the lower waveguide layer 105 of etching depth arrival N-shaped doping is stronger, produces protruding funnel type table top 11; The center line 1101 of funnel type table top 11 is α with respect to the angle of the longitudinal centre line of epitaxial wafer 1; The taper subtended angle of funnel type table top 11 is β; The center line 1101 of this funnel type table top 11 is 3 degree-10 degree with the longitudinal centre line α of epitaxial wafer 1, and the taper subtended angle β of funnel type table top 11 is 3 degree-10 degree;
Step 3: producing the upper surface growth dielectric insulating film 12 of epitaxial wafer 1 of funnel type table top 11, growth thickness is 400-450nm, then on dielectric insulating film 12, carry out etching, described etching can be wet etching or dry etching, the masking layer of wet etching and dry etching is all with photoresist optional, remove the dielectric insulating film 12 of funnel type table top 11 mid portions, retain the dielectric insulating film 12 of funnel type table top 11 marginal portions, on funnel type table top 11, produce electrode window through ray 13, the shape of electrode window through ray 13 is similar to protruding funnel type table top 11 shapes; The material of described dielectric insulating film 12 is silicon dioxide, silicon nitride, aluminium nitride or diamond, and growing method can adopt chemical vapour deposition (CVD) or plasma enhanced chemical vapor deposition;
Step 4: the p-type electrode of preparing Ti/Au system on have the epitaxial wafer 1 of electrode window through ray 13, first adopt electron beam evaporation technique to evaporate successively the titanium layer of 50nm and the gold layer of 250nm, then the gold layer of electroplating 300-1000nm, electroplating current can be 0.3mA-0.8mA;
Step 5: two electricity isolated regions of lateral etching 141 and 142 on the epitaxial wafer 1 that is prepared with p-type electrode, described etching can be wet etching or dry etching, if select wet etching, available photoresist does masking layer, erodes Au, Ti, SiO successively with corresponding corrosive liquid
2, p-type heavy doping contact layer 110, corrode the graded-index layer 109 to p-type doping, if select dry etching, etching depth arrives the graded-index layer 109 of p-type doping, make funnel type table top 11 be divided into three functional areas: uptake zone 111, superradiance district 112 and amplification region 113, wherein uptake zone 111 is inclination bar shaped, superradiance district 112 is inclination bar shaped, amplification region is inclination taper, the width of this electricity isolated region 141 and 142 is 5-30 μ m, the length of described uptake zone 111 is 0.1-5mm, the width of the funnel type table top 11 on this uptake zone 111 is width 2-200 μ m, the length in this superradiance district 112 is 0.1-5mm, the width of the funnel type table top 11 in this superradiance district 112 is 2-200 μ m, the length of this amplification region 113 is 0.1-5mm,
Step 6: adopt diamond dust to be thinned to suitable thickness its substrate 101 1 sides according to the actual (real) thickness of the epitaxial wafer 1 of growth, then use polishing fluid to carry out chemical polishing for the first time to it, use white alundum powder to carry out mechanical polishing to it until substrate 101 1 side surface lights are smooth without obvious cut, re-use polishing fluid it is carried out to chemical polishing for the second time; Adopt filament thermal evaporation method to prepare the N-shaped electrode of AuGeNi/Au system, evaporate successively AuGeNi alloy and Au; After having evaporated, adopt quick thermal annealing method, in nitrogen atmosphere, P type electrode and N-shaped electrode are carried out to Alloying Treatment simultaneously; Form chip;
Step 7: by required chamber length, chip is dissociated into tube core, then welding equipment, on heat sink plating indium layer, is put into sintering furnace and carried out sintering, finally pressure welding lead-in wire on tube core, completes preparation.
Consult shown in Fig. 6, when work, apply reversed bias voltage to uptake zone 111, superradiance district 112 and amplification region 113 apply respectively forward current.Control the size of light feedback intensity by regulating uptake zone 111 reversed bias voltage sizes, guarantee the shape of output spectrum by the size that regulates superradiance district 112 and amplification region 113 electric currents, thus the power output while realizing device work and the independent regulation of spectral shape.In actual applications, can realize and keep regulating within the specific limits its power output size under the substantially constant condition of output spectrum shape.Meanwhile, utilize the pyramidal structure feature of amplification region 113 to apply larger forward current to it and realize powerful output.
Although described the present invention in detail with reference to above-mentioned embodiment, should be appreciated that the present invention is not limited to disclosed execution mode, for the technical staff of this professional domain, can carry out various changes to its form and details.For example, functional areas can comprise a superradiance district and an amplification region incessantly, can increase its quantity according to actual conditions.
In a word; above-described specific embodiment, further describes object of the present invention, technical scheme and beneficial effect, within the spirit and principles in the present invention all; any modification of making, be equal to replacement, improvement etc., within protection scope of the present invention all should be included in.
Claims (8)
1. a manufacture method for the independent adjustable light-emitting diode of power output and spectral shape, its making step is specific as follows:
Step 1: the upper ducting layer that the under-clad layer of the graded-index layer of grown buffer layer, N-shaped doping, N-shaped doping, the lower waveguide layer of N-shaped doping, active area, p-type are adulterated successively on substrate, the top covering of p-type doping, graded-index layer and the p-type heavy doping contact layer of p-type doping, form epitaxial wafer;
Step 2: carry out etching downwards on the p-type heavy doping contact layer of epitaxial wafer, etching depth arrives the upper ducting layer of p-type doping or the lower waveguide layer of N-shaped doping, produce protruding funnel type table top, the center line of funnel type table top is α with respect to the angle of the longitudinal centre line of epitaxial wafer; The taper subtended angle of funnel type table top is β;
Step 3: producing the upper surface growth dielectric insulating film of epitaxial wafer of funnel type table top, then on dielectric insulating film, carry out etching, remove the dielectric insulating film of funnel type table top mid portion, retain the dielectric insulating film of funnel type mesa edge part, on funnel type table top, produce electrode window through ray;
Step 4: prepare p-type electrode on have the epitaxial wafer of electrode window through ray;
Step 5: two electricity isolated regions of lateral etching on the epitaxial wafer that is prepared with p-type electrode, etching depth arrives the graded-index layer of p-type doping, makes funnel type table top be divided into three functional areas: uptake zone, superradiance district and amplification region;
Step 6: will prepare N-shaped electrode after the substrate of epitaxial wafer one side attenuate, polishing, form chip;
Step 7: chip is dissociated into tube core, and welding equipment encapsulation, completes preparation.
2. the manufacture method of the independent adjustable light-emitting diode of power output as claimed in claim 1 and spectral shape, wherein said active area is quantum dot or quantum well.
3. the manufacture method of the independent adjustable light-emitting diode of power output as claimed in claim 1 and spectral shape, wherein the longitudinal centre line α of the center line of funnel type table top and epitaxial wafer is 3 degree-10 degree, the taper subtended angle β of funnel type table top is 3 degree-10 degree.
4. the manufacture method of the independent adjustable light-emitting diode of power output as claimed in claim 1 and spectral shape, wherein the material of dielectric insulating film is silicon dioxide, silicon nitride, aluminium nitride or diamond.
5. the manufacture method of the independent adjustable light-emitting diode of power output as claimed in claim 1 and spectral shape, wherein the width of electricity isolated region is 5-30 μ m.
6. the manufacture method of the independent adjustable light-emitting diode of power output as claimed in claim 1 and spectral shape, wherein the length of uptake zone is 0.1-5mm, the width of the funnel type table top on this uptake zone is width 2-200 μ m.
7. the manufacture method of the independent adjustable light-emitting diode of power output as claimed in claim 1 and spectral shape, wherein the length in superradiance district is 0.1-5mm, the width of the funnel type table top in this superradiance district is 2-200 μ m.
8. the manufacture method of the independent adjustable light-emitting diode of power output as claimed in claim 1 and spectral shape, wherein the length of amplification region is 0.1-5mm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104242056A (en) * | 2014-10-10 | 2014-12-24 | 中国电子科技集团公司第四十四研究所 | Ridge waveguide chip structure capable of improving electrical isolation capability and production method of ridge waveguide chip structure |
| CN105098006A (en) * | 2015-09-09 | 2015-11-25 | 中国科学院福建物质结构研究所 | Fabrication method of superluminescent diode chip and fabricated light emitting diode chip |
| CN105742960A (en) * | 2014-12-24 | 2016-07-06 | 精工爱普生株式会社 | Light emitting device and projektor |
| US20200251610A1 (en) * | 2019-01-31 | 2020-08-06 | Exalos Ag | Amplified Stimulated Emission Semiconductor Source |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242056A (en) * | 2014-10-10 | 2014-12-24 | 中国电子科技集团公司第四十四研究所 | Ridge waveguide chip structure capable of improving electrical isolation capability and production method of ridge waveguide chip structure |
| CN104242056B (en) * | 2014-10-10 | 2017-02-15 | 中国电子科技集团公司第四十四研究所 | Ridge waveguide chip structure capable of improving electrical isolation capability and production method of ridge waveguide chip structure |
| CN105742960A (en) * | 2014-12-24 | 2016-07-06 | 精工爱普生株式会社 | Light emitting device and projektor |
| CN105742960B (en) * | 2014-12-24 | 2019-08-02 | 精工爱普生株式会社 | Light emitting device and projector |
| CN105098006A (en) * | 2015-09-09 | 2015-11-25 | 中国科学院福建物质结构研究所 | Fabrication method of superluminescent diode chip and fabricated light emitting diode chip |
| US20200251610A1 (en) * | 2019-01-31 | 2020-08-06 | Exalos Ag | Amplified Stimulated Emission Semiconductor Source |
| US11791437B2 (en) * | 2019-01-31 | 2023-10-17 | Exalos Ag | Amplified spontaneous emission semiconductor source |
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