CN103824800B - Substrate-placing platform and substrate board treatment - Google Patents
Substrate-placing platform and substrate board treatment Download PDFInfo
- Publication number
- CN103824800B CN103824800B CN201310573742.9A CN201310573742A CN103824800B CN 103824800 B CN103824800 B CN 103824800B CN 201310573742 A CN201310573742 A CN 201310573742A CN 103824800 B CN103824800 B CN 103824800B
- Authority
- CN
- China
- Prior art keywords
- substrate
- placing platform
- mounting portion
- periphery
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 155
- 238000001179 sorption measurement Methods 0.000 claims abstract description 46
- 230000007246 mechanism Effects 0.000 claims abstract description 15
- 230000028016 temperature homeostasis Effects 0.000 claims abstract 2
- 238000012545 processing Methods 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 230000033228 biological regulation Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 52
- 238000010521 absorption reaction Methods 0.000 description 21
- 238000001020 plasma etching Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 238000003851 corona treatment Methods 0.000 description 7
- 239000002826 coolant Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention provides a kind of substrate-placing platform of electrostatic breakdown of element caused by being difficult to produce the rupture of substrate caused by the adsorption phenomena because of processed substrate and the electric charge of residual or stripping charge when peeling off processed substrate and uses its substrate board treatment.The substrate-placing platform includes：Mounting table main body including electrostatic chuck, the electrostatic chuck set the adsorption electrode for being applied in DC voltage in the upper portion insulating part of the mounting surface with mounting substrate；To the thermoregulation mechanism of mounting table main body regulation temperature；The heat-conducting gas supply mechanism of heat-conducting gas is supplied with the rear side to substrate, with the space for being supplied to heat-conducting gas between substrate and the upper surface of inboard portion than periphery mounting portion in the inner part when being placed with substrate, adsorption electrode is not present in part corresponding with periphery mounting portion, periphery mounting portion has recess, the back side of the substrate of the secondary product inadhesion of the upper surface that the recess to be attached to periphery mounting portion on periphery mounting portion is positioned in.
Description
Technical field
The present invention relates to the substrate-placing platform of mounting substrate and the substrate board treatment using the substrate-placing platform.
Background technology
Flat-panel monitor（FPD）, semiconductor devices manufacturing process in, it is more using implementing etching to processed substrate, splash
Penetrate, CVD（Chemical vapor-phase growing）Deng corona treatment.
As the plasma processing apparatus for implementing this corona treatment, it is known to for example configured in chamber a pair
Parallel plate electrode（Upper and lower part electrode）, in the processed substrate of substrate-placing platform mounting as lower electrode, will handle
In gas introduction chamber room, and high frequency is applied at least one party of electrode, form high-frequency electric field between the electrodes, utilize the high frequency
The plasma that electric field forms processing gas to implement corona treatment to processed substrate.
In this plasma processing apparatus, as the processed substrate placed by the substrate-placing platform of lower electrode
When temperature unevenly rises because of the heat of plasma, deterioration, the resist of the inner evenness of corona treatment be present
The product of scaling loss etc. is bad.Therefore, temperature is carried out to substrate-placing platform in a manner of processed substrate is changed into uniform Temperature Distribution
Degree regulation, and the heat of transferring substrates mounting table is carried out in the space for making gas be full of between substrate-placing platform and substrate.In addition, in order to
The pressure in the space is kept, the peripheral part in the upper surface of substrate-placing platform sets the peripheral part of the processed substrate of mounting simultaneously and it
The convex of adhesion, also, in order to prevent the floating of processed substrate, offset, electrostatic card is formed in the upper surface of substrate-placing platform
Disk（ESC）, processed substrate is fixed using Electrostatic Absorption（Such as patent document 1）.
Patent document 1：Japanese Unexamined Patent Publication 2008-84924 publications
The content of the invention
Problems to be solved by the invention
But electrostatic chuck applies DC voltage to the adsorption electrode for being arranged on the inside of insulating element, thus using depositing
It is that processed substrate adsorption is fixed on by the Coulomb force between the electric charge of the plasma in the electric charge and chamber of adsorption electrode
Substrate-placing platform surface, but for example when electric conductivity pair product is attached to substrate-placing platform（Lower electrode）Surface when, quilt
Electronics is easily accessible between processing substrate and substrate-placing platform, when electronics enters fashionable, the negative electrical charge of the positive charge and adsorption electrode
With reference to the substrate that is processed on the contrary when turning off the voltage of electrostatic chuck is adsorbed by the convex of substrate-placing platform, even if real afterwards
Apply except electrician's sequence can not fully remove electric charge.In addition, secondary product is attached to the surface of convex, be processed substrate and convex
Between gap filled by secondary product, the sticky limit of substrate and substrate-placing platform becomes over, and is further exacerbated by processed base
The absorption of plate.Therefore, after except electricity, processed substrate is made to increase, when being peeled off from substrate-placing platform, this turns into is led by adsorption phenomena
The electrostatic breakdown of element caused by the rupture of the substrate of cause and the electric charge of remaining, stripping charge（ESD）Producing reason.
The present invention be in view of the situation and complete, problem is to provide a kind of substrate-placing platform and uses the substrate-placing
The substrate board treatment of platform, the substrate-placing platform is when peeling off processed substrate, it is difficult to produces the adsorption phenomena of processed substrate
The electrostatic breakdown of element caused by the rupture of caused substrate and the electric charge of remaining, stripping charge.
Technical teaching for solving the problem was
In order to solve above-mentioned problem, in the first aspect of the present invention, there is provided a kind of substrate-placing platform, it is in process container
The substrate that is processed is implemented using processing gas to load substrate in the substrate board treatment of processing, the feature of the substrate-placing platform exists
In, including：Mounting table main body, it includes electrostatic chuck, and the electrostatic chuck is upper the mounting surface with the processed substrate of mounting
The adsorption electrode for being applied in DC voltage is set in portion's insulating element；The temperature that temperature adjustment is carried out to above-mentioned mounting table main body is adjusted
Save mechanism；And heat-conducting gas supply mechanism, it is when above-mentioned mounting table main body is placed with processed substrate, to the substrate that is processed
Rear side supplies heat-conducting gas, and above-mentioned upper portion insulating part has the periphery mounting portion of the peripheral part of the processed substrate of mounting, on
The upper surface for stating the inboard portion of the above-mentioned periphery mounting portion of ratio of upper portion insulating part in the inner part is formed as loading than above-mentioned periphery
Portion is low, above-mentioned with being supplied to when being placed with processed substrate between processed substrate and the upper surface of above-mentioned inboard portion
The space of heat-conducting gas, above-mentioned adsorption electrode are not present in the above-mentioned periphery mounting portion of above-mentioned upper portion insulating part, above-mentioned periphery
Mounting portion has recess, and the recess causes the secondary generation for the upper surface that above-mentioned periphery mounting portion is attached to because of above-mentioned processing gas
Thing inadhesion is at the back side for the processed substrate being placed on above-mentioned periphery mounting portion.
In the substrate-placing platform of above-mentioned 1st aspect, include from the extension of the above-mentioned inboard portion of above-mentioned upper portion insulating part
To position mutually level with above-mentioned periphery mounting portion and in the substrate supporting portion of the processed substrate of surface bearing thereon.
Above-mentioned recess can be to form the groove in the upper surface of above-mentioned periphery mounting portion.
Above-mentioned groove can be set along the circumferential direction of above-mentioned periphery mounting portion upper surface.In such a situation it is preferred that above-mentioned groove tool
Have it is multiple, preferably above-mentioned multiple grooves with equalization interval and width formed.It is preferred that the portion not comprising groove of above-mentioned periphery mounting portion
The width divided is more than 5mm.
Above-mentioned mounting table main body has electrical conductor portion, and above-mentioned electrical conductor portion can be supplied to for generating plasma
RF power.
In the 2nd aspect of the present invention, there is provided a kind of substrate board treatment, it is characterised in that possess：For to the base that is processed
Plate implements the process container of processing；The substrate-placing platform described in above-mentioned 1st aspect of substrate is loaded in above-mentioned process container；It is right
The processing gas feed mechanism of supply processing gas in above-mentioned process container；With the exhaust to being exhausted in above-mentioned process container
Mechanism.
In the substrate board treatment of above-mentioned 2nd aspect, following form can be used：The above-mentioned mounting of aforesaid substrate mounting table
Platform main body includes electrical conductor portion, above-mentioned electrical conductor portion and the high frequency electric source for supplying the RF power for generating plasma
Connection, above-mentioned processing gas feed mechanism include：It is oppositely disposed on the top of above-mentioned process container and aforesaid substrate mounting table
The spray head being used for discharging above-mentioned processing gas in above-mentioned process container, aforesaid substrate mounting table and above-mentioned spray head are formed
A pair of parallel plate electrode, processing gas is formed in above-mentioned process container using the RF power supplied from above-mentioned high frequency electric source
Plasma.
Invention effect
According to the present invention, the adsorption electrode of electrostatic chuck is arranged to be not present in the periphery mounting portion of upper portion insulating part,
And the secondary product inadhesion that periphery mounting portion has the upper surface for make it that periphery mounting portion is attached to because of processing gas is carrying
The recess at the back side for the processed substrate being placed in periphery mounting portion.Therefore, even if electric charge surrounds the electric conductivity of periphery mounting portion
Secondary product electric charge in connection is also not present, in addition, periphery mounting portion can be reduced because of the presence of recess and located
The absorption affinity between substrate is managed, so rising processed substrate after except electricity, when peeling off from substrate-placing platform, can prevent from inhaling
The electrostatic breakdown of element caused by the rupture of substrate caused by phenomenon and the electric charge of remaining, stripping charge（ESD）Generation.
Brief description of the drawings
Fig. 1 is the plasma etching dress of an example of the substrate board treatment as an embodiment of the invention
The sectional view put.
Fig. 2 is the sectional view of the substrate-placing platform in the plasma-etching apparatus for represent Fig. 1.
Fig. 3 is the plan for the part for representing the substrate-placing platform in plasma-etching apparatus.
Fig. 4 is the sectional view for representing existing substrate-placing platform.
Fig. 5（a）With（b）To represent in existing substrate-placing platform, using electrostatic chuck be adsorbed with substrate state and
Relieve the schematic diagram of the state of absorption.
Fig. 6（a）With（b）It is to represent in existing substrate-placing platform, conductive secondary product is adhered on convex
In the state of using electrostatic chuck be adsorbed with substrate state and relieve absorption state schematic diagram.
Fig. 7 is represented in existing substrate-placing platform, and the figure of the state of substrate, Fig. 7 are placed with convex（a）Represent shape
Into the state for having the gap between convex and substrate, Fig. 7（b）Represent the state that gap is filled by secondary product.
Fig. 8（a）With（b）It is to represent in the substrate-placing platform of present embodiment, conductive pair is adhered on convex
The state of substrate is adsorbed with using electrostatic chuck and relieve the schematic diagram of the state of absorption in the state of product.
Fig. 9（a）With（b）It is the figure for representing to be placed with the state of substrate on slotted convex is formed.
Description of reference numerals
1. plasma-etching apparatus（Substrate board treatment）；2. chamber（Process container）；4. substrate-placing platform；4a. bases
Material；4b. bottom insulation parts；4c. upper portion insulating parts；4d. sidepiece insulating elements；5. coolant flow path；7. space；8. supporting
Part；15. processing gas supply pipe；18. processing gas supply source；19. blast pipe；20. exhaust apparatus；21. carrying-in/carrying-out mouth；
25. high frequency electric source；26. heat-conducting gas stream；27. heat-conducting gas supply mechanism；30. electrostatic chuck；31. adsorption electrode；It is 33. straight
Flow power supply；40. control unit；41. convex（Periphery mounting portion）；42. inboard portion；51. secondary product；52. gap；G. substrate.
Embodiment
Hereinafter, with reference to the accompanying drawings of embodiments of the present invention.
Fig. 1 is the dress of the plasma etching of one for the substrate board treatment for being denoted as an embodiment of the invention
The sectional view put, Fig. 2 are the sectional views of the substrate-placing platform in the plasma-etching apparatus for represent Fig. 1, and Fig. 3 is to represent substrate
The plan of a part for mounting table.
As shown in figure 1, the plasma-etching apparatus 1 is configured to the glass substrate to FPD（Hereinafter referred to as " base
Plate "）The electric capacity mating type parallel flat plasma-etching apparatus that G is etched.For example there is liquid crystal display as FPD
（LCD）, electroluminescent（ElectroLuminescence；EL）Display, plasm display panel（PDP）Deng.Plasma
Body Etaching device 1 possesses as the processed substrate i.e. chamber 2 of substrate G process container of storage.Chamber 2 is for example by surface by oxygen
Change aluminium film to treat（Anodized）Aluminium form, be correspondingly formed with substrate G shape as four side tubulars.
Bottom wall mounting substrate G in chamber 2, and it is provided with the substrate-placing platform 4 as lower electrode.Substrate-placing platform
4 detailed structure illustrates later.
In the top of chamber 2 or upper wall, it has been oppositely disposed with substrate-placing platform 4 to supply processing gas in chamber 2 simultaneously
And the spray head 11 as upper electrode.Spray head 11 formed with make processing gas diffuse to inside gas diffusion space 12,
And in the multiple taps 13 of lower surface or the face relative with substrate-placing platform 4 formed with discharge processing gas.The spray head
11 ground connection, form a pair of parallel plate electrode together with substrate-placing platform 4.
The upper surface of spray head 11 is provided with gas introduction port 14, the gas introduction port 14 and processing gas supply pipe 15
Connection, the processing gas supply pipe 15 are connected via valve 16 and mass flow controller 17 with processing gas supply source 18.From
Process gases supply source 18 supplies the processing gas for etching.Halogen usually can be used in this field as processing gas
Gas, O2Gas, Ar gases etc..
The bottom wall of chamber 2 is connected with blast pipe 19, and the blast pipe 19 is connected with exhaust apparatus 20, is provided with pressure (not shown)
Power adjusts valve.Exhaust apparatus 20 possesses the vavuum pump of turbomolecular pump etc., thus, to being exhausted in chamber 2, can be taken out
Vacuum is to defined air pressure atmosphere.The side wall of chamber 2 is set formed with the carrying-in/carrying-out mouth 21 for carrying-in/carrying-out substrate G
The gate valve 22 for opening and closing the carrying-in/carrying-out mouth 21 is equipped with, it is single by conveyance (not shown) when carrying-in/carrying-out mouth 21 opens
Substrate G is moved into chamber 2 and taken out of inside and outside chamber 2 by member.
In addition, plasma-etching apparatus 1 possesses control unit 40, the control unit possesses for controlling plasma etching to fill
Put the microprocessor of 1 each constituting portion（Computer）.
Then, reference picture 2,3 illustrates the detailed structure of substrate-placing platform 4.
Substrate-placing platform 4 has：The base material 4a that the conductive material as the metal or carbon of aluminium etc. is formed；It is arranged on base
Bottom insulation part 4b between the bottom of material 4a and chamber 2；The upper portion insulating part 4c being arranged on base material 4a；And covering
The sidepiece insulating element 4d of base material 4a side wall, they are configured to be correspondingly formed as corner tabular or post with substrate G shape
The mounting table main body of shape.Alumina etc. can be used as bottom insulation part 4b, upper portion insulating part 4c, sidepiece insulating element 4d
Insulating ceramicses.
Base material 4a is connected with the supply lines 23 for supply high frequency electric power, the supply lines 23 and adaptation 24 and high frequency electric source
25 connections.13.56MHz RF power is for example supplied to substrate-placing platform 4 from high frequency electric source 25, thus, substrate-placing platform 4 is used
Make lower electrode.In addition, it is provided with base material 4a as the temperature for carrying out temperature adjustment to placed substrate G temperature
Adjustment unit makes the coolant flow path 5 that cooling medium circulates.
Form substrate-placing platform 4 top upper portion insulating part 4c its upper surface peripheral part formed with mounting substrate
G peripheral part and the convex 41 as periphery mounting portion adhered with it.It is more inner in the convex 41 than upper portion insulating part 4c
It is lower than the upper surface of convex 41 that the inboard portion 42 of side is formed as its upper surface, when being placed with substrate G, in substrate G and inner side
Formed with space 7 between the upper surface of part 42.Space 7 is connected with the heat-conducting gas stream 26 extended from below, heat-conducting gas
The other end of stream 26 is connected with heat-conducting gas supply mechanism 27.Then, from heat-conducting gas supply mechanism 27 via heat-conducting gas
Stream 26 supplies heat-conducting gas, such as He gases for transmitting heat to substrate G to space 7.
The multiple supporting members 8 that extend upward from the upper surface of inboard portion 42 of being internally provided with space 7.Convex
41 upper surface has mutually level position with the upper surface of supporting member 8, and convex is supported on the upper surface of supporting member
Central portion below the substrate G that 41 upper surface peripheral part is loaded, the upper surface of convex 41 and the upper surface structure of supporting member 8
Into substrate G mounting surface.In addition, in the present embodiment, expression supporting member 8 is columned situation, and supporting member 8 is to sky
Between 7 overall supply heat-conducting gas, as long as can supporting substrates G, clathrate, flat etc., other various shapes can be used
Shape.In addition, supporting member 8 can also be one.
The direction in face of the upper portion insulating part 4c inside along substrate G（That is, horizontal direction）Adsorption electrode 31 is provided with,
Electrostatic chuck 30 for Electrostatic Absorption substrate G is formed by upper portion insulating part 4c and adsorption electrode 31.Adsorption electrode 31 can
Using the various forms such as tabular, membranaceous, clathrate, netted.In addition, adsorption electrode 31, which is arranged to its end, does not contact convex 41.
That is, adsorption electrode 31 is not present in the part corresponding with convex 41 of upper portion insulating part 4c.Adsorption electrode 31 is via supply lines 32
It is connected with dc source 33, DC voltage is applied to adsorption electrode 31.Power supply to adsorption electrode 31 can be connect by switch 34
On and off is opened.In the off state, supply lines 32 is grounded.
As described later, absorption affinity caused by the attachment for reducing secondary product between substrate G and convex 41 eliminates
From the viewpoint of contacting excessive adhesion, in the upper surface of convex 41 in the circumferential direction formed with more than one（In the situation of this example
Lower two）Groove 41a.Heat-conducting gas does not flow into groove 41a.In addition, the viewpoint from the amount of leakage for reducing the space 7 from heat-conducting gas
Set out, the width of convex 41 is preferably that the width of the part of the mounting substrate in addition to groove 41a adds up to more than 5mm.Separately
Outside, it is more than 2 preferably to make groove 41a, and groove 41a is formed with the interval of equalization, width.Groove 41a depth is not particularly limited, still
Preferably convex 41 can keep the scope of necessary intensity.Substitute and this groove 41a is set, in addition in addition to groove 41a is set,
Rough surface of convex 41 etc. can also be made, the recess being variously formulated.
Substrate-placing platform 4 is with relative to the upper surface of substrate-placing platform 4（That is upper portion insulating part 4c upper surface）Can
It is provided with multiple lifter pins of the handing-over for carrying out substrate G with extending and retracting（It is not shown）, it is relative from substrate-placing platform 4
The lift for the state that upper surface protrudes upward carries out substrate G handing-over.
Then, the processing action in the plasma-etching apparatus 1 formed to such as upper type illustrates.Following processing
Action is carried out under the control of control unit 40.
First, defined pressure is become to being exhausted in chamber 2 using exhaust apparatus 20, open gate valve 22, profit
Substrate G is moved into from carrying-in/carrying-out mouth 21 with transport unit (not shown), in the state of lifter pin (not shown) is increased, at it
Upper reception substrate G, declines lifter pin, substrate G is placed on substrate-placing platform 4.Keep out of the way it from chamber 2 making transport unit
Afterwards, gate valve 22 is closed.
In this condition, the pressure in chamber 2 is adjusted to defined vacuum using pressure-regulating valve, and from processing
Gas supply source 18 supplies processing gas in chamber 2 via processing gas supply pipe 15 and spray head 11.
Then, from high frequency electric source 25 via adaptation 24 to substrate-placing platform 4（Base material 4a）Apply RF power, in conduct
The substrate-placing platform of lower electrode and high-frequency electric field is produced as between the spray head 11 of upper electrode, make the processing in chamber 2
Gaseous plasma.Now, DC voltage, substrate G warps are applied to the adsorption electrode 31 of electrostatic chuck 30 from dc source 33
Substrate-placing platform 4 is absorbed and fixed at by Coulomb force by plasma.
Now, the cooling medium for the set point of temperature that circulated in coolant flow path 5, temperature adjustment is carried out to substrate-placing platform 4, from
Heat-conducting gas supply mechanism 27 supplies heat-conducting gas via heat-conducting gas stream 26 to the space 7 of substrate G rear sides, and substrate is carried
The heat transfer for putting platform 4 carrys out control base board G temperature to substrate G.
In this condition, corona treatment is carried out to substrate G, carried out in the present embodiment at plasma etching
Reason.
After processing terminates, high frequency electric source 25 is disconnected, and switch 34 is switched into ground side, is stopped from dc source 33
Apply DC voltage, release substrate G Electrostatic Absorption.Then, lifter pin is utilized（It is not shown）Substrate G is risen, opens gate valve
22 utilize transport mechanism（It is not shown）Substrate G after processing is taken out of.
But as shown in figure 4, in existing substrate-placing platform 4 ', for reliably sorbing substrate G, by electrostatic chuck
30 ' adsorption electrode 31 ' is arranged at as far as possible by the near position in substrate G end.Even in this existing substrate-placing platform
In 4 ', in the case of secondary product is not present on the surface of convex 41 ', to Fig. 5（a）Adsorption electrode 31 ' apply voltage, inhaling
The state that the surface of attached electrode 31 ' and substrate G surface produce charge adsorption substrate G starts to the application for stopping voltage, such as Fig. 5
（b）Shown, electric charge leaves adsorption electrode 31 ', and the electric charge on substrate G surface is also left, and substrate G absorption is released from, so
When making substrate G rises, substrate G can peel off from substrate-placing platform 4 ' without problems.But make processing gas plasmarized
In the case of carrying out corona treatment, secondary product, such as Fig. 6 are generated because of reaction（a）Shown, they are generated as secondary sometimes
Thing 51 is attached to the surface of substrate-placing platform 4 ', is particularly the surface of convex 41 '.In the conductive situation of the secondary product 51
Under, when applying voltage to adsorption electrode 31 ', electric charge moves into the surface of secondary product 51, with portion of the adsorption electrode 31 ' immediately below it
The charge bonded divided.In this condition, even if stopping applying voltage, such as Fig. 6（b）It is shown, turn into move into and be attached to convex 41 '
The electric charge on the surface of the secondary product 51 of electric conductivity is not removed, the electricity of the part corresponding with convex 41 ' of adsorption electrode 31 '
The state of lotus residual, turns into by the partial adsorbates substrate G of convex 41 ' state.
In addition, in the prior art, as shown in figure 4, paying attention to the adherence in Electrostatic Absorption between substrate G and suppressing to come
Leakage from space 7, convex 41 ' are formed as with sufficient width.But in microcosmic viewing, such as Fig. 7（a）It is shown, prominent
When gap 52 be present between platform 41 ' and substrate G, such as Fig. 7（b）It is shown, the gap 52 by because of corona treatment and caused by it is secondary
When product 51 fills, make to adhere securely between substrate G and convex 41 ' because of the effect of secondary product 51, further encourage
Substrate G absorption.
In the prior art, as described above, the residual of the electric charge of part corresponding with convex 41 ' and secondary product 51 cause
Substrate G and convex 41 ' between excessive adhesion, rise substrate G it is peeled off from substrate-placing platform 4 ' when, occur by inhaling
The electrostatic breakdown of element caused by the rupture of substrate caused by phenomenon and the electric charge of remaining, stripping charge（ESD）.
So in the present embodiment, the adsorption electrode 31 of electrostatic chuck 30 is arranged to not contact with convex 41 so that
Be not present adsorption electrode 31 in upper portion insulating part 4c part corresponding with convex 41, and the upper surface of convex 41 formed with
Groove 41a.
Adsorption electrode 31 is arranged to not contact with convex 41, thus, base is being adsorbed to the application voltage of adsorption electrode 31
During plate G, such as Fig. 8（a）It is shown, even if electric charge moves into be formed on the surface of the electric conductivity pair product 51 of convex 41, its just under
Adsorption electrode 31 is not present in side part, so be not present with the electric charge of the charge bonded, when stopping applying voltage, such as Fig. 8（b）
It is shown, the electric charge on the surface for the secondary product 51 for having moved into electric conductivity is not remained, and the electric charge of adsorption electrode 31 is all removed, no
Produce the absorption of the substrate G caused by electric charge.In addition, even if adsorption electrode 31 physically it is corresponding with convex 41 part somewhat
It is prominent, simply by the presence of in adsorption electrode 31 electric charge and be present in convex 41（Electric conductivity pair product）Upper surface electric charge not
The engagement for existing and influenceing is formed, is contained in the state of " adsorption electrode 31 is not present in and 41 corresponding part of convex ".
In addition, such as Fig. 9（a）With（b）It is shown, in the upper surface of convex 41, groove 41a is set, it is secondary thus in groove 41a part
Product 51 is not adsorbed in substrate G, and therefore, in the part of the groove 41a in the absence of convex 41, substrate G is adsorbed by secondary product 51,
Its area can be reduced.Therefore, it is possible to reduce the absorption affinity of the existing substrate G based on secondary product 51.
Excessively adsorbed because of secondary product by abundant releasing, substrate G and convex 41 thereby, it is possible to avoid electrostatic adsorption force
Situation, when making it be peeled off from substrate-placing platform 4 substrate G rises after except electricity, substrate caused by adsorption phenomena can be prevented
The electrostatic breakdown of element caused by the electric charge of rupture and remaining, stripping charge（ESD）Generation.
On the other hand, adsorption electrode 31 be not present in substrate-placing platform 4 with 41 corresponding part of convex, it is possible that all
The substrate confining force of edge reduces, the leakage increase of the heat-conducting gas from space 7.But in-service evaluation electrode is revealed
Measure investigation result, adsorption electrode 31 be present in 41 corresponding part of convex in the case of be 3.77sccm, on the other hand,
It is 3.8sccm that adsorption electrode 31, which is not present in the case of with 41 corresponding part of convex, does not almost find difference.So that is,
Make in the case where adsorption electrode 31 is not present in 41 corresponding part of convex, also confirm that the substrate that can obtain abundance is kept
Power.
In addition, reducing the groove 41a adsorbed caused by secondary product by being set in convex 41, substrate G absorption affinity is slightly
Edge down low, but the area of the part contacted with substrate G by ensuring convex 41, letting out for heat-conducting gas can be nearly free from
The harmful effect of the increase of dew amount etc..
For example, circumferentially forming the groove 41a of more than 1 in convex 41, led thus, it is possible to the attachment reduced because of secondary product
Absorption affinity between the substrate G and convex 41 of cause, but now, it is preferably true in a manner of heat-conducting gas amount of leakage is in permissible range
The width for the part protected beyond the groove 41a of convex 41, according to the viewpoint, the width of convex 41 is preferably in addition to groove 41a
The width for loading the part of substrate adds up to more than 5mm.Additionally, it is preferred that groove 41a is set to be more than 2, with the interval of equalization, width
Groove 41a is formed, thus, it is possible to further improve the absorption reduced caused by the attachment of secondary product between substrate G and convex 41
Both the effect of power and the effect of reduction leakage, it is advantageous to.That is, groove 41a is set with the interval of equalization, width, thus not
The absorption affinity between substrate-convex only can be only reduced, and even in producing secondary product between substrate-convex, also can
Make equably to disperse substrate G adhesive force, the breakage of substrate, device caused by the absorption of local substrate can be prevented.Separately
Outside, multiple groove 41a are set, expanded during from the inner side of high pressure to groove（Decompression）And the outside of low pressure is reached, therefore can be further
Reduce the amount of leakage of heat-conducting gas.And then for the absorption caused by reducing the attachment of secondary product between substrate G and convex 41
Power, substitute and this groove 41a is set, or make rough surface of convex 41 etc. in addition to groove 41a is set, formation can avoid pair
The recess of the other manner of absorption of the product to substrate G is also effective.
Additionally, this invention is not limited to above-mentioned embodiment, can carry out various modifications.For example, in the above-described embodiment,
The example that the present invention is applied to parallel plate-type plasma-etching apparatus is illustrated, but not limited to this, also may be used
To use other plasma generation units such as sensing maqting type, and plasma etching is not limited to, can be also applied to
Other plasma processing apparatus such as plasma ashing, plasma CVD, and plasma processing apparatus is not limited to,
It can be applied to substrate-placing is whole in the substrate board treatment that substrate-placing platform is handled.In addition, in above-mentioned embodiment party
In formula, the example of the glass substrate suitable for FPD is illustrated, but not limited to this, it can also be applied to half certainly
Conductor substrate etc., other substrates.
Claims (7)
1. a kind of substrate-placing platform, it implements the processing substrate of processing in process container using processing gas to the substrate that is processed
Substrate is loaded in device, the substrate-placing platform is characterised by, including：
Mounting table main body, it includes electrostatic chuck, and the electrostatic chuck is exhausted on the top of the mounting surface with the processed substrate of mounting
The adsorption electrode for being applied in DC voltage is set in the part of edge；
The thermoregulation mechanism of temperature adjustment is carried out to the mounting table main body；With
Heat-conducting gas supply mechanism, it is when the mounting table main body is placed with processed substrate, to the back side for the substrate that is processed
Side supplies heat-conducting gas,
The upper portion insulating part has the periphery mounting portion of the peripheral part of the processed substrate of mounting, the upper portion insulating part
Upper surface than the inboard portion of the periphery mounting portion in the inner part is formed as lower than the periphery mounting portion, has and is being placed with
The space of the heat-conducting gas is supplied to during processed substrate between processed substrate and the upper surface of the inboard portion,
The adsorption electrode is not present in the periphery mounting portion of the upper portion insulating part,
The periphery mounting portion has recess, and the recess to be attached to the upper of the periphery mounting portion because of the processing gas
The secondary product inadhesion on surface at the back side for the processed substrate being placed on the periphery mounting portion,
The recess is to form the groove in the upper surface of the periphery mounting portion,
Circumferential direction of the groove along the periphery mounting portion upper surface is set,
The width of the part not comprising groove of the periphery mounting portion is more than 5mm.
2. substrate-placing platform as claimed in claim 1, it is characterised in that：
Also include extending to and the mutually level position of periphery mounting portion from the inboard portion of the upper portion insulating part
Put and in the substrate supporting portion of the processed substrate of surface bearing thereon.
3. substrate-placing platform as claimed in claim 1, it is characterised in that：
The groove has multiple.
4. substrate-placing platform as claimed in claim 3, it is characterised in that：
The multiple groove is formed with the interval and width of equalization.
5. the substrate-placing platform as described in any one of Claims 1 to 4, it is characterised in that：
The mounting table main body includes electrical conductor portion, and the electrical conductor portion is supplied to the high-frequency electrical for generating plasma
Power.
6. a kind of substrate board treatment, it is characterised in that possess：
For implementing the process container of processing to the substrate that is processed；
The substrate-placing platform according to any one of claims 1 to 4 of substrate is loaded in the process container；
Processing gas feed mechanism to supplying processing gas in the process container；With
To the exhaust gear being exhausted in the process container.
7. substrate board treatment as claimed in claim 6, it is characterised in that：
The mounting table main body of the substrate-placing platform includes electrical conductor portion, and the electrical conductor portion is used to generate with supplying
The high frequency electric source connection of the RF power of plasma,
The processing gas feed mechanism includes：It is oppositely disposed on the top of the process container and the substrate-placing platform
For the spray head to discharging the processing gas in the process container,
The substrate-placing platform and the spray head form a pair of parallel plate electrode, utilize the height supplied from the high frequency electric source
Frequency electric power forms the plasma of processing gas in the process container.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012250809A JP6010433B2 (en) | 2012-11-15 | 2012-11-15 | Substrate mounting table and substrate processing apparatus |
| JP2012-250809 | 2012-11-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103824800A CN103824800A (en) | 2014-05-28 |
| CN103824800B true CN103824800B (en) | 2018-01-19 |
Family
ID=50759789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310573742.9A Active CN103824800B (en) | 2012-11-15 | 2013-11-15 | Substrate-placing platform and substrate board treatment |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6010433B2 (en) |
| KR (1) | KR20140063415A (en) |
| CN (1) | CN103824800B (en) |
| TW (1) | TWI595555B (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6469985B2 (en) * | 2014-07-28 | 2019-02-13 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| KR102147615B1 (en) * | 2014-10-30 | 2020-08-24 | 도쿄엘렉트론가부시키가이샤 | Substrate placing table |
| CN104979189B (en) * | 2015-06-29 | 2017-12-08 | 北京工业大学 | A kind of method for etching plasma that regular figure is prepared based on substrate crystal orientation regulation and control |
| JP6855687B2 (en) * | 2015-07-29 | 2021-04-07 | 東京エレクトロン株式会社 | Substrate processing equipment, substrate processing method, maintenance method of substrate processing equipment, and storage medium |
| JP6584289B2 (en) * | 2015-11-04 | 2019-10-02 | 東京エレクトロン株式会社 | Substrate mounting table and substrate processing apparatus |
| JP6820206B2 (en) * | 2017-01-24 | 2021-01-27 | 東京エレクトロン株式会社 | How to process the work piece |
| KR102548233B1 (en) * | 2017-11-28 | 2023-06-27 | 도쿄엘렉트론가부시키가이샤 | processing unit |
| JP7008497B2 (en) * | 2017-12-22 | 2022-01-25 | 東京エレクトロン株式会社 | Substrate processing equipment and temperature control method |
| CN108364845B (en) * | 2018-03-20 | 2020-05-05 | 武汉华星光电技术有限公司 | Dry etching equipment |
| CN111937132A (en) * | 2018-04-04 | 2020-11-13 | 朗姆研究公司 | Electrostatic chuck with sealing surface |
| JP7101029B2 (en) * | 2018-04-12 | 2022-07-14 | 東京エレクトロン株式会社 | Electrostatic chuck, board processing device, and board holding method |
| JP7204350B2 (en) * | 2018-06-12 | 2023-01-16 | 東京エレクトロン株式会社 | Mounting table, substrate processing device and edge ring |
| JP7115942B2 (en) * | 2018-09-06 | 2022-08-09 | 東京エレクトロン株式会社 | PLACE, SUBSTRATE PROCESSING APPARATUS, EDGE RING AND TRANSFER METHOD OF EDGE RING |
| KR102550586B1 (en) * | 2018-10-31 | 2023-06-30 | 캐논 톡키 가부시키가이샤 | Adsorption and alignment method, adsorption system, film forming method, film forming apparatus, and manufacturing method of electronic device |
| JP7228989B2 (en) * | 2018-11-05 | 2023-02-27 | 東京エレクトロン株式会社 | PLACE, EDGE RING POSITIONING METHOD, AND SUBSTRATE PROCESSING APPARATUS |
| JP7209515B2 (en) * | 2018-11-27 | 2023-01-20 | 東京エレクトロン株式会社 | Substrate holding mechanism and deposition equipment |
| US12014946B2 (en) * | 2018-12-05 | 2024-06-18 | Ulvac, Inc. | Electrostatic chuck, vacuum processing apparatus, and substrate processing method |
| JP7340938B2 (en) * | 2019-02-25 | 2023-09-08 | 東京エレクトロン株式会社 | Mounting table and substrate processing equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6023405A (en) * | 1994-02-22 | 2000-02-08 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
| CN101504928A (en) * | 2008-02-06 | 2009-08-12 | 东京毅力科创株式会社 | Substrate mounting table, substrate processing apparatus and substrate temperature control method |
| CN102299091A (en) * | 2010-05-20 | 2011-12-28 | 东京毅力科创株式会社 | Plasma processing apparatus, substrate holding mechanism, and method for substrate position deviation detection |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05267436A (en) * | 1992-03-19 | 1993-10-15 | Fujitsu Ltd | Electrostatic chuck |
| US5636098A (en) * | 1994-01-06 | 1997-06-03 | Applied Materials, Inc. | Barrier seal for electrostatic chuck |
| US7663860B2 (en) * | 2003-12-05 | 2010-02-16 | Tokyo Electron Limited | Electrostatic chuck |
| JP4642550B2 (en) * | 2004-10-29 | 2011-03-02 | 東京エレクトロン株式会社 | Substrate mounting table, substrate processing apparatus, and substrate temperature control method |
| JP5003102B2 (en) * | 2006-10-27 | 2012-08-15 | 東京エレクトロン株式会社 | Electrostatic chuck diagnostic method, vacuum processing apparatus, and storage medium |
| JP5243465B2 (en) * | 2010-01-28 | 2013-07-24 | パナソニック株式会社 | Plasma processing equipment |
| JP5869899B2 (en) * | 2011-04-01 | 2016-02-24 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, substrate processing method, and susceptor cover |
-
2012
- 2012-11-15 JP JP2012250809A patent/JP6010433B2/en not_active Expired - Fee Related
-
2013
- 2013-11-05 KR KR1020130133326A patent/KR20140063415A/en not_active Application Discontinuation
- 2013-11-11 TW TW102140864A patent/TWI595555B/en not_active IP Right Cessation
- 2013-11-15 CN CN201310573742.9A patent/CN103824800B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6023405A (en) * | 1994-02-22 | 2000-02-08 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
| CN101504928A (en) * | 2008-02-06 | 2009-08-12 | 东京毅力科创株式会社 | Substrate mounting table, substrate processing apparatus and substrate temperature control method |
| CN102299091A (en) * | 2010-05-20 | 2011-12-28 | 东京毅力科创株式会社 | Plasma processing apparatus, substrate holding mechanism, and method for substrate position deviation detection |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140063415A (en) | 2014-05-27 |
| CN103824800A (en) | 2014-05-28 |
| TWI595555B (en) | 2017-08-11 |
| TW201438096A (en) | 2014-10-01 |
| JP6010433B2 (en) | 2016-10-19 |
| JP2014099519A (en) | 2014-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103824800B (en) | Substrate-placing platform and substrate board treatment | |
| US8664117B2 (en) | Method for manufacturing semiconductor device using anisotropic etching | |
| TWI492294B (en) | Plasma processing device and plasma processing method | |
| TWI529842B (en) | Substrate collection method | |
| US9966291B2 (en) | De-chuck control method and plasma processing apparatus | |
| KR102332028B1 (en) | Substrate processing method and substrate processing device | |
| KR102569911B1 (en) | Focus ring and substrate processing apparatus | |
| TWI445119B (en) | A substrate stage and a substrate processing device | |
| TWI631613B (en) | Substrate processing method and substrate processing device | |
| CN106024566B (en) | Plasma treatment appts and plasma processing method | |
| CN108807124B (en) | Substrate processing apparatus | |
| JP2017216346A (en) | Plasma processing device, plasma processing method, and storage medium | |
| CN107026102A (en) | Substrate-placing platform and substrate board treatment | |
| CN107731681A (en) | Plasma-etching method and plasma etch system | |
| JP4850762B2 (en) | Deposition method | |
| JP2007220926A (en) | Apparatus and method for plasma treatment | |
| JP5138195B2 (en) | Heat transfer gas supply mechanism, heat transfer gas supply method, substrate processing apparatus, and substrate processing method | |
| JP2022024265A (en) | Substrate detachment method and plasma processing device | |
| JP7450512B2 (en) | Substrate processing method and substrate processing apparatus | |
| CN103094043B (en) | Plasma processing apparatus | |
| JP6076954B2 (en) | Substrate processing apparatus and substrate processing method | |
| JP2001298013A (en) | Substrate processing device | |
| KR20110051686A (en) | Board Tray Unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |