CN103811364B - A kind of indium phosphide microwave circuit multilamellar interconnected method realized based on BCB - Google Patents
A kind of indium phosphide microwave circuit multilamellar interconnected method realized based on BCB Download PDFInfo
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- CN103811364B CN103811364B CN201310728903.7A CN201310728903A CN103811364B CN 103811364 B CN103811364 B CN 103811364B CN 201310728903 A CN201310728903 A CN 201310728903A CN 103811364 B CN103811364 B CN 103811364B
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Abstract
The present invention is a kind of indium phosphide microwave circuit multilamellar interconnected method realized based on BCB, is comprised the following steps：1）In indium phosphide（InP）Wiring pattern of photoetching on substrate, by evaporated metal and is peeled off, and realizes that a wiring metal is graphical；2）Spin coating BCB（Benzocyclobutene）, and solidify which using high temperature mode under nitrogen atmosphere；3）On BCB after hardening, photoetching interconnection via hole image, with photoresist as mask, realizes the graphical of BCB through holes by dry etching, realizes the interconnection of multiple layer metal eventually through the mode of plating；4）The secondary wiring pattern of photoetching, is realized the filling of mutual linked hole and the metallization of secondary interconnection pattern, realizes the interconnection between different metal layer by plating mode.Advantage：The reliability of multilamellar interconnection can be increased, the adaptability of the BCB multilamellar interconnection technologies to different-thickness is improved, the interconnection loss of InP-base microwave circuit is reduced.
Description
Technical field
The present invention relates to a kind of indium phosphide microwave circuit multilamellar interconnected method realized based on BCB, is that one kind is based on
The compound semiconductor circuit multilamellar interconnection processing technique of BCB, belongs to compound semiconductor technical field.
Background technology
InP-base microwave circuit possesses very excellent high frequency characteristics, has in microwave circuit and Digital Analog Hybrid Circuits
Extensive use.Possesses advantages below as the BCB materials of InP-base Microwave Circuit Interconnect layer：Which possesses high breakdown voltage, can be real
Now it is effectively isolated, effectively reduces the surface density of states of device；Low dielectric constant, can reduce ghost effect, improve device
Energy；Good thermal conductance, can increase the heat stability of device under high current；Technological process is simple, and room temperature BCB is liquid condition,
The direct spin coating of sol evenning machine can be passed through as photoresist, and high temperature cure process is also relatively simple, and flatness is good.
The content of the invention
Proposed by the present invention is a kind of indium phosphide microwave circuit multilamellar interconnected method realized based on BCB, and its purpose is intended to
Increase the reliability of multilamellar interconnection, improve the adaptability of the BCB multilamellar interconnection technologies of different-thickness, reduce InP-base microwave circuit
Interconnection loss.
The technical solution of the present invention：The indium phosphide microwave circuit multilamellar interconnected method based on BCB is realized, including it is as follows
Step：
1）In indium phosphide（InP）Wiring pattern of photoetching on substrate, by evaporated metal and is peeled off, and is realized once
Wiring metal is graphical；
2）Spin coating BCB（Benzocyclobutene）, and solidify which using high temperature mode under nitrogen atmosphere；
3）Photoetching interconnection via hole image on BCB after hardening, with photoresist as mask, is etched using dry etching method
Fall the BCB in once wiring, form the mutual linked holes of BCB；
4）The secondary wiring pattern of photoetching, realizes the filling of mutual linked hole and the metal of secondary interconnection pattern by plating mode
Change, realize the interconnection between different metal layer.
Advantages of the present invention：High withstand voltage is adopted in whole process, low dielectric, the BCB materials of good thermal conductivity increased multilamellar
The reliability of interconnection, prevents the degeneration or failure of circuit.And it is more to improve the BCB to different-thickness by plating mutual contact mode
The adaptability of layer interconnection technology.Multilamellar interconnection contact resistance is reduced using plating mode simultaneously, InP-base microwave electron is reduced
Device and circuit interconnection loss, increased BCB multilamellars interconnection in microwave circuit field range of application；Increased multilamellar interconnection
Reliability, improve the adaptability of the BCB multilamellar interconnection technologies to different-thickness, reduce the interconnection of InP-base microwave circuit
Loss.
Description of the drawings
In figure 1 is once wiring, 2 is InP substrate material, 3 is BCB, 4 is photoresist, 5 is secondary wiring.
Fig. 1 is in indium phosphide（InP）The profile after once connecting up is realized by photoetching, evaporation, stripping on substrate.
Fig. 2 is to complete spin coating BCB and make the profile after its solidification using high temperature mode under nitrogen atmosphere.
Fig. 3 is the profile that photoetching interconnects via hole image on BCB after hardening.
Fig. 4 is the mutual linked hole profile formed after the upper BCB of the complete once wiring of dry etching as mask with photoresist.
Fig. 5 is the interconnection profile after plating mode realizes mutual linked hole filling and the metallization of secondary interconnection pattern.
Specific embodiment
Technical scheme is further described below in conjunction with the accompanying drawings：
1. in indium phosphide（InP）Wiring pattern of photoetching on substrate, by evaporated metal titanium/platinum/gold（Ti/Pt/Au）
And peeled off, realize that a wiring metal is graphical, profile is as shown in Figure 1.
2. spin coating BCB, and which is toasted 20min at 150 DEG C in the baking oven full of nitrogen atmosphere solidifies BCB, Gu
Rear BCB profiles are changed as shown in Figure 2.
3. on BCB after hardening, photoetching interconnects via hole image, and after photoetching, profile is as shown in Figure 3.
4. with photoresist as mask, the BCB in once wiring is etched away using dry etching method, forms the mutual UNICOMs of BCB
Hole.The equipment adopted by dry etch process is for reactive ion etching machine（RIE）Or sensing ion coupled etch machine（ICP）,
Etching gas are carbon tetrafluoride（CF4）, sulfur hexafluoride（SF6）Or fluoroform（CHF3）.Etched away using dry etch process
Through hole profile once after the BCB in wiring is as shown in Figure 4.
5. photoetching is carried out to secondary wiring pattern after interconnection via hole image photoresist is removed, is realized by electroplating Au modes
The mutually filling of linked hole Au and the metallization of secondary interconnection pattern, finally realizes interconnecting between different metal wiring layer, profile
As shown in Figure 5.
Embodiment
1. in indium phosphide（InP）Wiring pattern of photoetching is adopted on substrate, by evaporated metal Ti/Pt/Au and is carried out
Peel off, realize that a wiring metal is graphical, for AZ7908, emitter metal is the wherein photoresist adopted by photoetching process
Titanium/platinum/gold（Ti/Pt/Au）, the thickness of Ti is 40 nanometers, and the thickness of Pt is 40 nanometers, and the thickness of Au is 500 nanometers.
2. the spin coating BCB on glue spreader, spin coating rotating speed are 1000 rpm, are completed after spin coating in the baking oven full of nitrogen atmosphere
It is interior which is toasted into 20min at 150 DEG C to solidify BCB.
3. the photoetching of interconnection via hole image is realized on BCB after hardening using AZ7908 photoresists.
4. with photoresist AZ7908 as mask, the BCB in once wiring is etched away using dry etching method, BCB is formed
Mutual linked hole.The equipment adopted by dry etch process is sensing ion coupled etch machine（ICP）, etching gas are carbon tetrafluoride
（CF4）, gas flow is 50sccm, and etch rate is 200nm/min.
5. interconnection via hole image photoresist is removed using acetone, ethanol, secondary wiring diagram is realized using AZ7908 photoresists
Shape photoetching, realizes the filling of mutual linked hole and the metallization of secondary interconnection pattern by electroplating Au modes, is finally completed different gold
Interconnection between category layer.
Claims (1)
1. a kind of indium phosphide microwave circuit multilamellar interconnected method realized based on BCB, is characterized in that the method is comprised the following steps：
1) in indium phosphide（InP）Wiring pattern of photoetching on substrate, by evaporated metal and is peeled off, and realization is once connected up
Metal patternization；
2) spin coating BCB（Benzocyclobutene）, and solidify which using high temperature mode under nitrogen atmosphere；
3) photoetching interconnection via hole image on BCB after hardening, with photoresist as mask, etches away one using dry etching method
BCB on secondary wiring metal, forms the mutual linked holes of BCB；
4) the mask lithography glue for via etch, and the secondary wiring pattern of photoetching again are removed；
5) metallization of the metal filled and secondary interconnection pattern of mutual linked hole is realized by plating mode, it is final to realize different gold
Interconnection between category layer；
Described step 1）In indium phosphide（InP）Wiring pattern of photoetching is adopted on substrate, by evaporated metal Ti/Pt/Au
And peeled off, realize that a wiring metal is graphical, for AZ7908, emitter stage is golden for the wherein photoresist adopted by photoetching process
Belong to for titanium/platinum/gold（Ti/Pt/Au）, the thickness of Ti is 40 nanometers, and the thickness of Pt is 40 nanometers, and the thickness of Au is 500 nanometers；
Described step 2）The spin coating BCB on glue spreader, spin coating rotating speed are 1000 rpm, are being full of nitrogen atmosphere after completing spin coating
Baking oven in which toasted into 20min at 150 DEG C solidify BCB；
Described step 3）The photoetching of interconnection via hole image is realized on BCB after hardening using AZ7908 photoresists, gas is etched
Body is carbon tetrafluoride CF4, gas flow is 50sccm, and etch rate is 200nm/min.
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| CN201310728903.7A CN103811364B (en) | 2013-12-26 | 2013-12-26 | A kind of indium phosphide microwave circuit multilamellar interconnected method realized based on BCB |
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| CN103811364B true CN103811364B (en) | 2017-03-29 |
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| CN105244313B (en) * | 2015-09-08 | 2017-09-12 | 上海航天电子通讯设备研究所 | Film through-hole interconnection preparation method on substrate |
| CN111900093A (en) * | 2020-07-14 | 2020-11-06 | 南京中电芯谷高频器件产业技术研究院有限公司 | BCB film terahertz circuit and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017779A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Method for forming through hole on InP substrate and semiconductor photoelectric device |
| CN101140861A (en) * | 2006-08-22 | 2008-03-12 | 索尼株式会社 | Method for producing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101017779A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Method for forming through hole on InP substrate and semiconductor photoelectric device |
| CN101140861A (en) * | 2006-08-22 | 2008-03-12 | 索尼株式会社 | Method for producing semiconductor device |
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