CN103811066A - Erasing method and system of nonvolatile memory - Google Patents
Erasing method and system of nonvolatile memory Download PDFInfo
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Abstract
The invention provides an erasing method of a nonvolatile memory. The erasing method comprises the following steps of receiving an erase command; judging whether a threshold voltage of a storage unit to be erased is normal or not, normally pre-programming the storage unit to be erased if the threshold voltage of the storage unit to be erased is normal, otherwise, initially pre-programming the storage unit with abnormal threshold voltage, and normally pre-programming all storage units to be erased after the threshold voltage of all storage units to be erased is normal, wherein the programming voltage of the initial pre-programming operation is smaller than that of the normally pre-programming operation; erasing the storage unit after being pre-programmed; and verifying whether an over-erased storage unit exists or not after the erasing operation, restoring the storage unit if the over-erased storage unit exists, otherwise, ending the operation. The invention also provides an erasing system of the nonvolatile memory for realizing the method. By adopting the erasing method and the erasing system of the nonvolatile memory, the leak current caused by the abnormal power failure can be avoided.
Description
Technical field
The present invention relates to semiconductor memory technologies field, particularly relate to a kind of method for deleting and system of nonvolatile memory.
Background technology
In storer, exist two kinds of basic units of storage, eraseable memory unit (erase cell) and memory cells (program cell), also be " 1 " and " 0 ", therefore correspondence also just exists the basic operation of wiping and programming these two kinds of memory cells.Wherein, " 0 " is become to the process of " 1 ", be called and wipe; Otherwise be called programming.
Traditional memory erase principle is as follows: first the target logic piece (block) that need to carry out erase operation is carried out to Pre_PGM(pre-programmed) operation, object is that all storage unit are all programmed for to same " 0 " state storage unit, is also threshold state.It is whether all cell verify (program verification) by PV that Pre_PGM operates the basis for estimation whether completing.After PV is verified, finish Pre_PGM operation, enter erase pulse(erasing pulse) beginning erase operation.First erasing pulse arrives, and the storage of having carried out Pre_PGM is wiped.And then carry out OEV1(and cross erase verification) operation, object is that the threshold value of having been wiped of being crossed to existing is carried out once weak programming lower than " 1 " storage unit of 0V, more than shifting its threshold value onto 0V.Next step is EV(erase verification) operation, if but, again wipe, second erasing pulse arrives, so move in circles, until EV by or erase counter reach maximum number, then jump out circulation, carry out OEV2 operation.OEV2 is similar with OEV1, and object is further to raise the threshold value of " 1 " storage unit to eliminate subthreshold value conducting electric leakage.So far, completed the erase operation to object block.
In the practical application of wiping in aforementioned memory, often run into the situation of unexpected powered-off fault.If power down is to occur in erase process, so just may exist in a large number and to cross the threshold value of having wiped lower than 0 eraseable memory unit, this is due to the correction that does not have enough time to carry out OEV1, OEV2, or while revising power down cause.So, carry out erase operation when again powering on, these cross a large amount of threshold values of having wiped lower than 0 eraseable memory unit, will in the time of Pre_PGM, there is larger leakage current, this not only can affect the speed of Pre_PGM, when serious, even can destroy the drainpump that program current is provided, cause Pre_PGM to complete, thereby cannot proceed erase operation.
Summary of the invention
The method for deleting and the system that the invention provides a kind of nonvolatile memory, can solve the hidden danger that likely causes leakage current because of powered-off fault.
In order to address the above problem, the invention discloses a kind of method for deleting of nonvolatile memory, comprise the following steps:
Receive erase operation instruction;
Pre-programmed module judges that whether the threshold voltage of storage unit to be erased is normal, if, all storage unit to be erased are carried out to normal pre-programmed operation, otherwise, the abnormal storage unit of threshold voltage is carried out to initial pre-programmed operation, until the threshold voltage of all storage unit to be erased normal after, all storage unit to be erased are carried out to normal pre-programmed operation, the program voltage of described initial pre-programmed operation is less than the program voltage of normal pre-programmed operation;
Wipe the storage unit of module after to pre-programmed and carry out erase operation;
Cross after wiping module verification erase operation whether had eraseable memory unit, if so, repair described storage unit, otherwise, end operation.
Further, whether the described threshold voltage that judges storage unit to be erased normally comprises:
Whether the threshold voltage that judges storage unit to be erased is less than target threshold voltage, if not, normal, otherwise, undesired.
Further, the value of described target threshold voltage is:
The minimum value of the normality threshold voltage range under normal erase status.
Further, the value of described target threshold voltage is:
Avoid storage unit in the time of normal pre-programmed operation, to produce the minimum value of the threshold voltage ranges of leakage current.
Further, the value of described target threshold voltage is:
The minimum value of avoiding storage unit to produce the threshold voltage ranges of leakage current in the time of normal pre-programmed operation adds elasticity number, and described elasticity number span is between 0.1V to 0.2V.
Further, the value of described target threshold voltage is 0.4V or 0.6V.
Further, whether the described threshold voltage that judges storage unit is less than target threshold voltage and comprises:
Select a reference memory unit, the threshold voltage of described reference memory unit is target threshold voltage, and applies a reference voltage to the word line of this reference memory unit, obtains predetermined reference current.
Apply a positive voltage to the word line of each storage unit to be verified, draw the measurement electric current in this storage unit to be verified, wherein, the value of the reference voltage that the value word line of this positive voltage applies is identical.
Relatively reference current and measurement electric current, be greater than reference current if measure electric current, and the threshold voltage of storage unit is less than target threshold voltage, otherwise, be greater than or equal to target threshold voltage.
Further, the program voltage of described initial pre-programmed operation is determined according to the current threshold voltage of the abnormal storage unit of threshold voltage and target threshold voltage.
The erasing system that the invention also discloses a kind of nonvolatile memory, comprising:
Command reception module, for receiving erase operation instruction;
Pre-programmed module, whether normal for judging the threshold voltage of storage unit to be erased, if so, all storage unit to be erased are carried out to normal pre-programmed operation; Otherwise, the abnormal storage unit of threshold voltage is carried out to initial pre-programmed operation, until the threshold voltage of all storage unit to be erased normal after, all storage unit to be erased are carried out to normal pre-programmed operation, and the program voltage of described initial pre-programmed operation is less than the program voltage of normal pre-programmed operation;
Wipe module, carry out erase operation for the storage unit to be erased;
Cross erase verification module, wipe for verifying whether storage unit after wiping existed, if so, repair the storage unit that described mistake is wiped, otherwise, end operation.
Further, described pre-programmed module comprises:
Judge submodule, whether be less than target threshold voltage for the threshold voltage that judges storage unit to be erased, if not, normal, otherwise, undesired.
Further, described pre-programmed module comprises target threshold voltage setting submodule, and for target setting threshold voltage, described target threshold voltage is determined according to following at least one mode:
The minimum value of normal erase status threshold voltages scope;
Avoid storage unit in the time of normal pre-programmed operation, to produce the minimum value of the threshold voltage ranges of leakage current;
The minimum value of avoiding storage unit to produce the threshold voltage ranges of leakage current in the time of normal pre-programmed operation adds elasticity number, and described elasticity number span is between 0.1V to 0.2V.
Further, described pre-programmed module comprises:
Initial programming voltage determination module, for determining according to the current threshold voltage of the abnormal storage unit of threshold voltage and target threshold voltage the program voltage that initial pre-programmed operates.
Compared with prior art, the present invention includes following advantage:
The method for deleting of nonvolatile memory of the present invention and system, by changing the treatment scheme for storage unit to be erased of pre-programmed module, are divided into initial pre-programmed operation by one step completed script pre-programmed operation and carry out for twice with normal pre-programmed operation.Initial pre-programmed operation is for improving the threshold voltage that occurs abnormal storage unit because of powered-off fault, until the threshold voltage of all storage unit all in normal range after, then carry out normal pre-programmed operation.Because initial pre-programmed operate the program voltage that applies relatively a little less than, can avoid directly applying the situation that leakage current appears in the storage unit causing compared with strong program voltage, thereby the hidden danger of having eliminated powered-off fault and bring, has guaranteed completing smoothly of whole erase process.After repairing, initial pre-programmed operation carries out again normal pre-programmed operation, relatively strong even if normal pre-programmed operates the program voltage applying, and also can avoid storage unit to occur leakage current.
In addition, in whole process, although pre-programmed operation has been divided into twice to be carried out, but because the difference of twice operation is only the program voltage difference applying, therefore, initial pre-programmed operation and normal pre-programmed operation can realize by pre-programmed module, realizing the steering logic that only need to change pre-programmed module, the threshold voltage that guarantees all storage unit all carries out normal programming operation after normal condition again, without the hardware configuration that changes or increase storer, therefore, can avoid increasing because the hardware configuration of storer changes cost.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the method for deleting embodiment mono-of nonvolatile memory of the present invention;
Fig. 2 is the process flow diagram of the method for deleting example of nonvolatile memory of the present invention;
Fig. 3 is the structural representation of the erasing system embodiment mono-of nonvolatile memory of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
For making those skilled in the art understand better the present invention, below simply introduce the principle of compositionality of nonvolatile memory.
The core of nonvolatile memory is storage array, and storage array is made up of storage unit (cell).Generally speaking, a cell can comprise source electrode (source, S), and grid (control gate, CG) is controlled in drain electrode (drain, D), and floating grid (floating gate, FG).Control grid CG and can be used for connecing voltage VG.If the positive voltage that VG is sufficient intensity, between floating grid FG and raceway groove, can produce tunneling effect or channel hot electron effect, make electronic injection floating grid FG, thereby cause cell threshold voltage to rise, threshold voltage rises to and to a certain degree represents to deposit in data 0, i.e. programming operation; Wipe the positive voltage that adds sufficient intensity at undercoat, utilize the tunneling effect between raceway groove and floating grid FG, the electronics on floating grid FG is attracted to substrate, thereby cause cell threshold voltage to reduce, threshold voltage is reduced to and to a certain degree represents to deposit data 1 in, and this is wipes.
The present invention is mainly the pre-programmed operation (Pre_PGM) of existing erase process is divided into initial pre-programmed operation and normal pre-programmed operation.Initial pre-programmed operation refers to and in the time of programming operation, applies weak program voltage, the program voltage while being less than normal programming operation.Normal pre-programmed operation is identical with the pre-programmed operation of existing erase process, and also to operate the program voltage applying identical with the pre-programmed of existing erase process for its program voltage applying.Initial pre-programmed operation is mainly for cause the abnormal storage unit to be erased of threshold voltage because of powered-off fault, improve the threshold voltage of these storage unit by applying weak program voltage, thereby make the threshold voltage of storage unit to be erased in normal range, can avoid applying stronger program voltage in the time carrying out normal pre-programmed operation and cause storage unit to have leakage current, thereby eliminate the hidden danger of bringing because of powered-off fault.
With reference to Fig. 1, the method for deleting embodiment mono-of a kind of nonvolatile memory of the present invention is shown, comprise the following steps:
Whether the threshold voltage of storage unit normally judges in the following way: whether the threshold voltage that judges storage unit to be erased is less than target threshold voltage, if not, normal, otherwise, undesired.Whether whether the threshold voltage of storage unit is less than target threshold voltage is in crossing the judgement of erase status to storage unit.Target threshold voltage is the minimum value that meets normal erase status threshold voltages scope in a technological process.For example, near the threshold value that belonged to " being less than 0 or close 0 " of wiping category is adjusted to the threshold voltage size of normally wiping that meets of " being greater than 0.5V ", this 0.5V is target threshold voltage.
Preferably, because there is leakage current for fear of storage unit in the present invention in the time carrying out normal pre-programmed operation, even if refer to that the grounded-grid of storage unit also has electric current and exists, for fear of this situation, can realize by the threshold voltage of raising storage unit.Also adopt the mode of initial pre-programmed operation to improve the threshold voltage of storage unit.
In general theory, avoid the threshold voltage of leakage current more than 0.4V, in reality, depend on the test result of product, but generally can be poor not too many with 0.4V.Be greater than 0.4V if arrange, can better avoid leakage current, but can increase number of times and the time of initial pre-programmed operation, thereby affect speed, therefore the value of threshold voltage can not be too large.Therefore, the value of target threshold voltage can adopt following standard further: choose the minimum value that can avoid the threshold voltage ranges that produces leakage current meeting within the scope of normal erase status threshold voltages.More preferably, in order to guarantee to avoid the effect of leakage current, the value of target threshold voltage can also be for add an elasticity number on the basis of avoiding the minimum value that produces leakage current, elasticity number generally between 0.1V-0.2V, for example 0.1V or 0.2V etc.The general value of target threshold voltage value of the present invention is 0.4V or 0.6V etc.
The abnormal storage unit of threshold voltage is carried out to initial pre-programmed operation, and detailed process is to apply initial programming voltage at the grid of these storage unit.The object of initial pre-programmed operation is to improve the threshold voltage that causes the abnormal storage unit of threshold voltage because of situations such as powered-off faults, makes it return to normal condition, is greater than or equal to target threshold voltage.Therefore the program voltage that, initial pre-programmed operation adopts is determined according to the current threshold voltage of the abnormal storage unit of threshold voltage and target threshold voltage.
Concrete, cause because of situations such as powered-off faults because storage unit threshold of appearance threshold voltage is undesired, in this process, even if the threshold voltage of storage unit is undesired, be also the normal condition that departs from of minimum amplitude, in conjunction with the span of aforementioned target threshold voltage, can determine, in initial pre-programmed operation, the threshold voltage of storage unit is brought up to target threshold voltage, applying weak program voltage can realize.As long as the threshold voltage of storage unit can be brought up in normality threshold voltage range.
Preferably, because for causing the abnormal storage unit of threshold voltage because of situations such as powered-off faults, its threshold voltage ranges is generally a comparatively fixing scope, there will not be larger fluctuation.According to aforementioned description, for general storage unit, its target threshold voltage is also a comparatively fixing scope.Therefore,, for the flow process that simplifies the operation, the weak program voltage that initial pre-programmed operation applies can adopt fixed value, all adopts this fixing program voltage for any storage unit.In actual process, can determine that initial pre-programmed operates the concrete numerical value of the program voltage applying by the mode of a large amount of experimental verifications and specific experiment data.In the present invention, generally adopt 0v to be used as the program voltage of initial pre-programmed operation to the voltage of 2v left and right.
Whether the threshold voltage that in addition, judges storage unit is less than target threshold voltage can adopt following steps:
Select a reference memory unit, the threshold voltage of described reference memory unit is target threshold voltage, and applies a reference voltage to the word line of this reference memory unit, obtains predetermined reference current.
Apply a positive voltage to the word line of each storage unit to be verified, draw the measurement electric current in this storage unit to be verified, wherein, the value of the reference voltage that the value word line of this positive voltage applies is identical.
Relatively reference current and measurement electric current, be greater than reference current if measure electric current, and the threshold voltage of storage unit is less than target threshold voltage, otherwise, be more than or equal to target threshold voltage.
Wherein, the reference voltage being applied on the word line of reference memory unit can be determined according to the threshold voltage of required reference current and reference memory unit.Required reference current value determines by many factors, and such as SA resolving accuracy, power consumption requirement, rate request etc. are determined, specifically depend on the spec requirement of each money product, along with the progress of technology, this is worth generally between 10uA～20uA at present.For example, if the target threshold voltage of reference memory unit is 1V, predetermined reference current is 10 μ A, and so for current reference memory unit, if be set to 4V and can obtain the electric current of 10 μ A with reference to voltage, reference voltage is set to 4V so.It is also individual compromise, too little that the size of reference voltage is selected, and for target threshold voltage, possibly cannot produce enough electric currents; Too large, may make again memory cell be subject to the programming impact of effect.Under state-of-the-art, generally in 5V left and right.
If the threshold voltage of storage unit is greater than or equal to target threshold voltage, illustrate that storage unit is in normal erase status, without reparation, can directly carry out normal pre-programmed operation.Normal pre-programmed operation is identical with the process of existing pre-programmed operation, and definite mode of its program voltage applying is also identical with the process of existing pre-programmed operation, and concrete pre-programmed operating process is not described in detail in this.
Whether step 104, there is eraseable memory unit after mistake is wiped module verification erase operation, if so, repairs described storage unit, otherwise, end operation.
After crossing erase verification module verification erase operation, whether had eraseable memory unit, and can adopt and once cross erase verification, the mode that also can adopt secondary to cross erase verification is carried out.Once cross erase verification and refer to, in the time that checking existed eraseable memory unit, these storage unit are applied to a program voltage and repair operation to improve the threshold voltage of storage unit.Secondary is crossed erase verification and is referred to, repair process is divided into programming operation twice, increase and once cross erase verification aforementioned once mistake on the basis of erase verification, follow-up mistakes erase verification is mainly carried out threshold voltage after front once mistake erase verification still lower storage unit.Because, due to the erase operation through stronger erased conditions, can cause the threshold voltage distribution range of storage unit in logical block very wide, the threshold voltage of some storage unit is too low, even lower than 0V.In this case, even by once crossing the programming operation in erase verification, still also have the threshold voltage of partial memory cell lower than 0V, cannot return to normal erase status.For this reason, then increase and once cross erase verification, then, by applying weak program voltage, these storage unit are repaired, can guarantee the accuracy of erase verification.
With reference to Fig. 2, instantiation process flow diagram of method for deleting of nonvolatile memory of the present invention is shown.Cross erase verification and be divided into two steps and carry out, be respectively and initially cross erase verification (OEV1) and secondary and cross erase verification (OEV2).
First, storage unit to the object block that need to carry out erase operation is carried out pre-programmed operation (Pre_PGM), wherein, first need to judge whether to exist the abnormal storage unit of threshold voltage, if, carry out initial pre-programmed operation (Pre_PGM1) until all storage unit are carried out normal pre-programmed operation (Pre_PGM2) after all normal again, otherwise, can directly carry out normal pre-programmed operation.
Then, carry out erase operation (ERASE), in the time that first erasing pulse is taken to, the storage unit of carrying out pre-programmed operation is carried out to erase operation.
Then, carry out initially crossing erase verification (OEV1), the threshold voltage that the mistake that may exist is wiped carries out once weak programming lower than the storage unit of 0V, more than its threshold voltage is brought up to 0V.Then carry out erase verification operation (EV), judge that whether storage unit is by wiping, if not, again return to erase operation.So move in circles, until reach maximal value by erase verification or erasing times (erasecounter), the initial erase verification of crossing finishes.
Finally, carry out secondary and cross erase verification (OEV2), secondary crosses the specific practice of erase verification and the process of initial erase verification is excessively similar, and object is further to raise the simple eye threshold voltage of storage of wiping to leak electricity to eliminate subthreshold voltage conducting.
So far, completed the erase operation to target logic piece.
With reference to Fig. 3, the erasing system embodiment of nonvolatile memory of the present invention is shown, comprise command reception module 10, pre-programmed module 20, wipe module 30 and cross erase verification module 40.
Further, pre-programmed module also comprises target threshold voltage setting submodule, and for target setting threshold voltage, described target threshold voltage is determined according to following at least one mode:
The minimum value of normal erase status threshold voltages scope;
Avoid storage unit in the time of normal pre-programmed operation, to produce the minimum value of the threshold voltage ranges of leakage current;
The minimum value of avoiding storage unit to produce the threshold voltage ranges of leakage current in the time of normal pre-programmed operation adds elasticity number, and described elasticity number span is between 0.1V to 0.2V.
Further, this pre-programmed module also comprises initial programming voltage determination module, for determining according to the current threshold voltage of the abnormal storage unit of threshold voltage and target threshold voltage the program voltage that initial pre-programmed operates.
Wipe module 30, carry out erase operation for the storage unit to be erased.
Cross erase verification module 40, wipe for verifying whether storage unit after wiping existed, if so, repair the storage unit that described mistake is wiped, otherwise, end operation.
The erasing system of nonvolatile memory of the present invention, by changing the treatment scheme for storage unit to be erased of pre-programmed module, is divided into initial pre-programmed operation by one step completed script pre-programmed operation and carries out for twice with normal pre-programmed operation.Initial pre-programmed operation is for improving the threshold voltage that occurs abnormal storage unit because of powered-off fault, until the threshold voltage of all storage unit all in normal range after, then carry out normal pre-programmed operation.Because initial pre-programmed operate the program voltage that applies relatively a little less than, can avoid directly applying the situation that leakage current appears in the storage unit causing compared with strong program voltage.After repairing, initial pre-programmed operation carries out again normal pre-programmed operation, relatively strong even if normal pre-programmed operates the program voltage applying, and also can avoid storage unit to occur leakage current.
In addition, in whole process, although pre-programmed operation has been divided into twice to be carried out, but because the difference of twice operation is only the program voltage difference applying, therefore, initial pre-programmed operation and normal pre-programmed operation can realize by pre-programmed module, only need to change the steering logic of pre-programmed module, the threshold voltage that guarantees all storage unit all carries out normal programming operation after normal condition again, without the hardware configuration that changes or increase storer, therefore, can avoid increasing because the hardware configuration of storer changes cost.
Each embodiment in this instructions all adopts the mode of going forward one by one to describe, and what each embodiment stressed is and the difference of other embodiment, between each embodiment identical similar part mutually referring to.For system embodiment, because it is substantially similar to embodiment of the method, so description is fairly simple, relevant part is referring to the part explanation of embodiment of the method.
Method for deleting to nonvolatile memory provided by the present invention and system are described in detail above, applied specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment is just for helping to understand method of the present invention and core concept thereof; , for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention meanwhile.
Claims (12)
1. a method for deleting for nonvolatile memory, is characterized in that, comprises the following steps:
Receive erase operation instruction;
Pre-programmed module judges that whether the threshold voltage of storage unit to be erased is normal, if, all storage unit to be erased are carried out to normal pre-programmed operation, otherwise, the abnormal storage unit of threshold voltage is carried out to initial pre-programmed operation, until the threshold voltage of all storage unit to be erased normal after, all storage unit to be erased are carried out to normal pre-programmed operation, the program voltage of described initial pre-programmed operation is less than the program voltage of normal pre-programmed operation;
Wipe the storage unit of module after to pre-programmed and carry out erase operation;
Cross after wiping module verification erase operation whether had eraseable memory unit, if so, repair described storage unit, otherwise, end operation.
2. the method for deleting of nonvolatile memory as claimed in claim 1, is characterized in that, whether the described threshold voltage that judges storage unit to be erased normally comprises:
Whether the threshold voltage that judges storage unit to be erased is less than target threshold voltage, if not, normal, otherwise, undesired.
3. the method for deleting of nonvolatile memory as claimed in claim 2, is characterized in that, the value of described target threshold voltage is:
The minimum value of the normality threshold voltage range under normal erase status.
4. the method for deleting of nonvolatile memory as claimed in claim 2, is characterized in that, the value of described target threshold voltage is:
Avoid storage unit in the time of normal pre-programmed operation, to produce the minimum value of the threshold voltage ranges of leakage current.
5. the method for deleting of nonvolatile memory as claimed in claim 2, is characterized in that, the value of described target threshold voltage is:
The minimum value of avoiding storage unit to produce the threshold voltage ranges of leakage current in the time of normal pre-programmed operation adds elasticity number, and described elasticity number span is between 0.1V to 0.2V.
6. the method for deleting of nonvolatile memory as claimed in claim 2, is characterized in that, the value of described target threshold voltage is 0.4V or 0.6V.
7. the method for deleting of nonvolatile memory as claimed in claim 2, is characterized in that, whether the described threshold voltage that judges storage unit is less than target threshold voltage comprises:
Select a reference memory unit, the threshold voltage of described reference memory unit is target threshold voltage, and applies a reference voltage to the word line of this reference memory unit, obtains predetermined reference current.
Apply a positive voltage to the word line of each storage unit to be verified, draw the measurement electric current in this storage unit to be verified, wherein, the value of the reference voltage that the value word line of this positive voltage applies is identical.
Relatively reference current and measurement electric current, be greater than reference current if measure electric current, and the threshold voltage of storage unit is less than target threshold voltage, otherwise, be greater than or equal to target threshold voltage.
8. the method for deleting of the nonvolatile memory as described in claim 1 to 7 any one, is characterized in that, the program voltage of described initial pre-programmed operation is determined according to the current threshold voltage of the abnormal storage unit of threshold voltage and target threshold voltage.
9. an erasing system for nonvolatile memory, is characterized in that, comprising:
Command reception module, for receiving erase operation instruction;
Pre-programmed module, whether normal for judging the threshold voltage of storage unit to be erased, if so, all storage unit to be erased are carried out to normal pre-programmed operation; Otherwise, the abnormal storage unit of threshold voltage is carried out to initial pre-programmed operation, until the threshold voltage of all storage unit to be erased normal after, all storage unit to be erased are carried out to normal pre-programmed operation, and the program voltage of described initial pre-programmed operation is less than the program voltage of normal pre-programmed operation;
Wipe module, carry out erase operation for the storage unit to be erased;
Cross erase verification module, wipe for verifying whether storage unit after wiping existed, if so, repair the storage unit that described mistake is wiped, otherwise, end operation.
10. the erasing system of nonvolatile memory as claimed in claim 9, is characterized in that, described pre-programmed module comprises:
Judge submodule, whether be less than target threshold voltage for the threshold voltage that judges storage unit to be erased, if not, normal, otherwise, undesired.
The erasing system of 11. nonvolatile memorys as claimed in claim 10, is characterized in that, described pre-programmed module comprises target threshold voltage setting submodule, and for target setting threshold voltage, described target threshold voltage is determined according to following at least one mode:
The minimum value of normal erase status threshold voltages scope;
Avoid storage unit in the time of normal pre-programmed operation, to produce the minimum value of the threshold voltage ranges of leakage current;
The minimum value of avoiding storage unit to produce the threshold voltage ranges of leakage current in the time of normal pre-programmed operation adds elasticity number, and described elasticity number span is between 0.1V to 0.2V.
The erasing system of 12. nonvolatile memorys as described in claim 10 or 11, is characterized in that, described pre-programmed module comprises:
Initial programming voltage determination module, for determining according to the current threshold voltage of the abnormal storage unit of threshold voltage and target threshold voltage the program voltage that initial pre-programmed operates.
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| CN113077831A (en) * | 2021-03-25 | 2021-07-06 | 普冉半导体(上海)股份有限公司 | Erasing programming method of nonvolatile memory |
| CN113409869A (en) * | 2021-06-30 | 2021-09-17 | 芯天下技术股份有限公司 | Nonvolatile memory erasing method and device, electronic equipment and storage medium |
| CN113539337A (en) * | 2020-04-20 | 2021-10-22 | 爱思开海力士有限公司 | Semiconductor memory device and method of operating semiconductor memory device |
| CN113628659A (en) * | 2018-08-28 | 2021-11-09 | 长江存储科技有限责任公司 | Erasing method and device and computer readable storage medium |
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