CN103779476A - Light-emitting diode packaging structure and light-emitting diode lamp with large illumination angle - Google Patents
Light-emitting diode packaging structure and light-emitting diode lamp with large illumination angle Download PDFInfo
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- CN103779476A CN103779476A CN201210470540.7A CN201210470540A CN103779476A CN 103779476 A CN103779476 A CN 103779476A CN 201210470540 A CN201210470540 A CN 201210470540A CN 103779476 A CN103779476 A CN 103779476A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
- F21V19/002—Fastening arrangements intended to retain light sources the fastening means engaging the encapsulation or the packaging of the semiconductor device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
Abstract
本发明公开一种发光二极管封装结构及大照明角度的发光二极管灯具。发光二极管封装结构包括一基板、一发光二极管芯片与一封装胶材。基板包括一第一导电部分、一第二导电部分与一透明绝缘部分。第一导电部分与第二导电部分通过透明绝缘部分互相分开并受其围绕。第一导电部分与第二导电部分的表面具一粗糙结构与透明绝缘部分接合。发光二极管芯片设置在基板上并电连接于第一导电部分与第二导电部分。封装胶材位于基板上覆盖在发光二极管芯片。发光二极管芯片发出的光线可经由封装胶材与基板的透明绝缘部分出光。
The invention discloses a light-emitting diode packaging structure and a light-emitting diode lamp with a large lighting angle. The LED packaging structure includes a substrate, a LED chip and a packaging adhesive material. The substrate includes a first conductive part, a second conductive part and a transparent insulating part. The first conductive part and the second conductive part are separated from each other by and surrounded by a transparent insulating part. The surfaces of the first conductive part and the second conductive part have a rough structure and are joined to the transparent insulating part. The light-emitting diode chip is disposed on the substrate and electrically connected to the first conductive part and the second conductive part. The packaging glue is located on the substrate and covers the light-emitting diode chip. The light emitted by the light-emitting diode chip can be emitted through the transparent insulating part of the packaging adhesive material and the substrate.
Description
Technical field
The present invention relates to a kind of package structure for LED, particularly use the LED light lamp of package structure for LED.
Background technology
The various features such as light-emitting diode has that volume is little, environmental protection, luminous efficiency are high, power saving have been widely used in various fields, for example, on lighting field.
But, when light-emitting diode work, can produce a large amount of heat energy.If formed by the very large material of thermal expansion coefficient difference for carrying the substrate of light-emitting diode, the heat energy that is sent to substrate easily makes the material of substrate that the distortion of serious inequality occurs, make to produce the large stress of pullling between material, cause the easy crack that produces between material.So extraneous aqueous vapor/sulphur gas can infiltrate from crack.Therefore, improve spoilage, reduction useful life and the reliability of product.
Moreover, the substrate that traditional package structure for LED adopts, by lighttight metal and engineering plastic are formed, light cannot penetrate, and causes institute's range of exposures to be only confined to substrate top.
Summary of the invention
The object of the present invention is to provide a kind of package structure for LED and LED lamp, there is high reliability and wide-angle range of exposures.
For reaching above-mentioned purpose, the invention provides a kind of package structure for LED.Package structure for LED comprises a substrate, a light-emitting diode chip for backlight unit and a packaging adhesive material.Substrate comprises one first current-carrying part, one second current-carrying part and a transparent insulation part.The first current-carrying part and the second current-carrying part by transparent insulation part separated from each other and be subject to its around.The first current-carrying part engages with transparent insulation part with surperficial tool one coarse structure of the second current-carrying part.Light-emitting diode chip for backlight unit is arranged on substrate and is electrically connected on the first current-carrying part and the second current-carrying part.Packaging adhesive material is positioned at and on substrate, covers light-emitting diode chip for backlight unit.The light that light-emitting diode chip for backlight unit sends can be via the transparent insulation part bright dipping of packaging adhesive material and substrate.
A kind of LED lamp with large light angle is provided.LED lamp comprises a lamp socket, a lampshade and package structure for LED as above.Lamp socket has a supporting construction.Lampshade and lamp socket are bonded with each other and form a light source accommodation space.Package structure for LED is arranged in the supporting construction with light source accommodation space.
Embodiment more cited below particularly, and coordinate appended accompanying drawing, be described in detail below:
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the package structure for LED of one embodiment of the invention;
Fig. 2 is the top view of the substrate of one embodiment of the invention;
Fig. 3 is the top view of the substrate of one embodiment of the invention;
Fig. 4 is the top view of the substrate of one embodiment of the invention;
Fig. 5 is the top view of the substrate of one embodiment of the invention;
Fig. 6 is the top view of the substrate of one embodiment of the invention;
Fig. 7 is the schematic diagram of the LED lamp of one embodiment of the invention;
Fig. 8 is the schematic diagram of the arrayed formula lead frame connecting plate tablet of diode package structure manufacture process use of the present invention.
Main semiconductor element symbol description
102,602～package structure for LED;
104,204,304,404,504,604,804～substrate;
106,206,306,406,506,706,806～the first current-carrying parts;
108,208,308,408,508,708,808～the second current-carrying parts;
110,210,310,410,510,610,810～transparent insulation part;
112～upper copline; 114～lower copline;
116,616～light-emitting diode chip for backlight unit;
118～wavelength conversion layer; 120～wire;
122,622～packaging adhesive material;
224,324,424,524,824～first side;
226,326,526,826～second side;
228, the 328,428,528,828～three side;
230,330,530,830～the four sides;
232,234,332,334,432,434,336,338,532,534,536,538,832,834,836,838～coarse structure;
640～LED lamp; 642～lamp socket;
644～supporting construction; 646～lampshade; 648～light source accommodation space;
750～arrayed formula lead frame connecting plate tablet;
751～array unit; 752～conduction linking part;
754～transparent insulation part;
256,258,264,266～conduction linking part;
260,262～outward flange.
Embodiment
Fig. 1 illustrates according to the cutaway view of the package structure for LED 102 of an embodiment.Package structure for LED 102 comprises substrate 104.Substrate 104 comprises the first current-carrying part 106, the second current-carrying part 108 and transparent insulation part 110.In embodiment, the first current-carrying part 106, the second current-carrying part 108 have upper copline 112 and lower copline 114 with transparent insulation part 110.The first current-carrying part 106 and the second current-carrying part 108 can comprise respectively metal, for example copper, aluminium or other suitable materials.Transparent insulation part 110 can be made up of thermosetting resin.Thermosetting resin comprises epoxides (epoxy), silicide (silicone) or above-mentioned combination, or other suitable materials.
Please refer to Fig. 1, light-emitting diode chip for backlight unit 116 is arranged on the first current-carrying part 106 of substrate 104.The first current-carrying part 106 can comprise the metal of low thermal resistance, to help light-emitting diode chip for backlight unit 116 to dispel the heat, improves thus the reliability of product.
Please refer to Fig. 1, wavelength conversion layer 118 covering luminousing diode chips 116, wherein wavelength conversion layer 118 can comprise fluorescence material, phosphorescence material or other suitable materials.Light-emitting diode chip for backlight unit 116 can utilize wire 120 to be electrically connected on the first current-carrying part 106 and the second current-carrying part 108.Packaging adhesive material 122 is positioned on substrate 104 and covers light-emitting diode chip for backlight unit 116, wavelength conversion layer 118, wire 120.The light that light-emitting diode chip for backlight unit 116 sends can be via transparent insulation part 110 bright dippings of packaging adhesive material 122 and substrate 104, and therefore package structure for LED 102 can have large lighting angle, reach the effect of irradiating on a large scale.
For instance, the substrate 104 of Fig. 1 can utilize the substrate shown in Fig. 2 to Fig. 5.
Please refer to Fig. 2, the first current-carrying part 206 of substrate 204 and the second current-carrying part 208 by transparent insulation part 210 separated from each other and be subject to its around.The first current-carrying part 206 has two second sides 226 relative to two, relative first side 224.First side 224 is adjacent to each other with second side 226.In one embodiment, the length of first side 224 is greater than the length of second side 226.The second current-carrying part 208 has two relative the 3rd sides 228 four side 230 relative to two.The 3rd side 228 and four side 230 are adjacent to each other.
Please refer to Fig. 2, in this embodiment, the first current-carrying part 206 is than having the coarse structure 232 engaging with transparent insulation part 210 on 226Chang first side, second side 224, and wherein coarse structure 232 comprises recess.In addition, on the 3rd side 228 of the second current-carrying part 208, have the coarse structure 234 engaging with transparent insulation part 210, wherein coarse structure 234 comprises recess.By such design, the first current-carrying part 206, the second current-carrying part 208 that can avoid substrate 204 from transparent insulation part 210 due to the significantly different damage problems that cause of thermal coefficient of expansion, to improve the reliability of product.
The first current-carrying part 206 has the conduction linking part 256,258 engaging with transparent insulation part 210.Conduction linking part 256 extends to the outward flange 260 (being the outward flange of transparent insulation part 210 in this embodiment) of substrate 204 from the first side 224 of the first current-carrying part 206.Conduction linking part 258 extends to the outward flange 262 (being the outward flange of transparent insulation part 210 in this embodiment) of substrate 204 from the second side 226 of the first current-carrying part 206.The second current-carrying part 208 has the conduction linking part 264,266 engaging with transparent insulation part 210.Conduction linking part 264 extends to the outward flange 260 of substrate 204 from the 3rd side 228 of the second current-carrying part 208.Conduction linking part 266 extends to the outward flange 262 of substrate 204 from the four side 230 of the second current-carrying part 208.In embodiment, very narrow thin of the conduction linking part 256,258 of the first current-carrying part 206 and the conduction linking part 264,266 of the second current-carrying part 208, therefore can improve light and improve light emission rate from the ratio of transparent insulation part 210.
In embodiment, for instance, substrate 204 can utilize punching pin to stamp out in metallic plate (not shown) to have the metal pattern (not shown) of the first current-carrying part 206 and the second current-carrying part 208, then molded (molding) transparent insulation part 210 in the space between metal pattern, then carries out cutting step and makes.The manufacture method of the substrate 204 of embodiment is simple, cost is low, and can large-area manufacturing.Moreover the yield of substrate 204 is high, therefore can improve the reliability of product.
Difference between the substrate 204 that the substrate 304 that Fig. 3 illustrates and Fig. 2 illustrate is, the first side 324 of the first current-carrying part 306 with on second side 326, there is the coarse structure 332,336 engaging with transparent insulation part 310, wherein coarse structure 332,336 comprises recess.In addition, the 3rd side 328 of the second current-carrying part 308 with on four side 330, there is the coarse structure 334,338 engaging with transparent insulation part 310, wherein coarse structure 334,338 comprises recess.By such design, the first current-carrying part 306, the second current-carrying part 308 that can avoid substrate 304 from transparent insulation part 310 due to the significantly different damage problems that cause of thermal coefficient of expansion, to improve the reliability of product.
Difference between the substrate 204 that the substrate 404 that Fig. 4 illustrates and Fig. 2 illustrate is, the coarse structure 432 on the first side 424 of the first current-carrying part 406 comprises protuberance.In addition, the coarse structure 434 on the 3rd side 428 of the second current-carrying part 408 comprises protuberance.By such design, the first current-carrying part 406, the second current-carrying part 408 that can avoid substrate 404 from transparent insulation part 410 due to the significantly different damage problems that cause of thermal coefficient of expansion, to improve the reliability of product.
Difference between the substrate 304 that the substrate 504 that Fig. 5 illustrates and Fig. 3 illustrate is, the coarse structure 532 on the first side 524 of the first current-carrying part 506 comprises protuberance with the coarse structure 536 on second side 526.In addition, the coarse structure 534 on the 3rd side 528 of the second current-carrying part 508 and the coarse structure 538 on four side 530 comprise protuberance.By such design, the first current-carrying part 506, the second current-carrying part 508 that can avoid substrate 504 from transparent insulation part 510 due to the significantly different damage problems that cause of thermal coefficient of expansion, to improve the reliability of product.
Difference between the substrate 504 that the substrate 804 that Fig. 6 illustrates and Fig. 5 illustrate is, the coarse structure 832 on the first side 824 of the first current-carrying part 806 comprises protuberance, and the coarse structure 836 on second side 826 comprises recess.In addition, the coarse structure 834 on the 3rd side 828 of the second current-carrying part 808 comprises protuberance, and the coarse structure 838 on four side 830 comprises recess.By such design, the first current-carrying part 806, the second current-carrying part 808 that can avoid substrate 804 from transparent insulation part 810 due to the significantly different damage problems that cause of thermal coefficient of expansion, to improve the reliability of product.
The substrate of embodiment is not limited to the structure shown in Fig. 2 to Fig. 6.In other embodiments, on first, second, third, fourth side of first, second current-carrying part (not shown), respectively can there is the coarse structure of other numbers.Moreover coarse structure can mix takes recess and protuberance.Coarse structure can have asymmetric design.Design is determined by actual needs.
Fig. 7 illustrates according to the schematic diagram of the LED lamp 640 of an embodiment.LED lamp 640 comprises lamp socket 642, and it has supporting construction 644.Lampshade 646 is bonded with each other and forms a light source accommodation space 648 with lamp socket 642.Package structure for LED 602 is configured in the supporting construction 644 in light source accommodation space 648.The light sending due to the light-emitting diode chip for backlight unit 616 of embodiment can be via packaging adhesive material 622 the transparent insulation part 610 with substrate 604, and through lampshade 646 bright dippings, therefore LED lamp 640 can have large lighting angle.
Fig. 8 illustrates the arrayed formula lead frame connecting plate tablet 750 that package structure for LED manufacture process is used.Arrayed formula lead frame connecting plate tablet 750 comprises several array units 751 that are made up of the first current-carrying part 706, the second current-carrying part 708, wherein between several the first current-carrying parts 706, between several the second current-carrying part 708, interlink by conduction linking part 752.The first current-carrying part 706, the second current-carrying part 708 are coated in transparent insulation part 754 with conduction linking part 752.Transparent insulation part 754 is transparent heat solidity plastic basis material.In an embodiment, in each the array unit 751 being formed by the first current-carrying part 706, the second current-carrying part 708 in arrayed formula lead frame connecting plate tablet 750, form, example light-emitting diode chip for backlight unit 116, wavelength conversion layer 118, wire 120, packaging adhesive material 122 as shown in Figure 1, after having encapsulated, need to carry out cutting step, to complete example package structure for LED as shown in Figure 1.Wherein, it is narrow that cutting step causes the conduction linking part 752 at X direction and y direction in final products, the benefit that this feature is brought is that the chance that light can self-induced transparency insulated part 754 appears is increased, and therefore can have large lighting angle, reaches the effect of irradiating on a large scale.
Although disclosed the present invention in conjunction with above preferred embodiment; but it is not in order to limit the present invention, be anyly familiar with this operator, without departing from the spirit and scope of the present invention; can do a little change and retouching, therefore protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (11)
1. a package structure for LED, comprising:
Substrate, comprising:
The first current-carrying part;
The second current-carrying part; And
Transparent insulation part, this first current-carrying part and this second current-carrying part by this transparent insulation part separated from each other and be subject to its around, and this first current-carrying part engages with this transparent insulation part with surperficial tool one coarse structure of this second current-carrying part;
Light-emitting diode chip for backlight unit, is arranged on this substrate and is electrically connected on this first current-carrying part and this second current-carrying part; And
Packaging adhesive material, is positioned on this substrate and covers this light-emitting diode chip for backlight unit, and the light that wherein light-emitting diode chip for backlight unit sends can be via the transparent insulation part bright dipping of this packaging adhesive material and this substrate.
2. package structure for LED as claimed in claim 1, wherein this first current-carrying part has two second sides relative to two, relative first side, wherein the length of the plurality of first side is greater than the length of the plurality of second side, and respectively this first, second side is adjacent to each other.
3. package structure for LED as claimed in claim 2, wherein has coarse structure at least one those first sides and/or at least one those second sides.
4. package structure for LED as claimed in claim 1, wherein this second current-carrying part has two relative the 3rd sides four side relative to two, at least one those the 3rd sides and/or at least one those four sides, has coarse structure.
5. package structure for LED as claimed in claim 3, wherein this coarse structure comprises recess and/or protuberance.
6. package structure for LED as claimed in claim 4, wherein this coarse structure comprises recess and/or protuberance.
7. package structure for LED as claimed in claim 1, wherein this transparent insulation part is made up of thermosetting resin.
8. package structure for LED as claimed in claim 7, wherein this thermosetting resin comprises epoxides (epoxy), silicide (silicone) or above-mentioned combination.
9. package structure for LED as claimed in claim 1, also comprises a wavelength conversion layer, is positioned on this light-emitting diode chip for backlight unit.
10. package structure for LED as claimed in claim 1, wherein this first current-carrying part and this second current-carrying part have conduction linking part, extend to an outward flange of this substrate and engage with this transparent insulation part from a side.
11. 1 kinds have the LED lamp of large light angle, comprising:
Lamp socket, it has a supporting construction;
Lampshade, itself and this lamp socket is bonded with each other and forms a light source accommodation space; And
Package structure for LED as described in claim 1 ~ 10 any one, is arranged in this supporting construction with light source accommodation space.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101138899A TW201417343A (en) | 2012-10-22 | 2012-10-22 | Light-emitting diode package with light-emitting diode package structure and large illumination angle |
| TW101138899 | 2012-10-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103779476A true CN103779476A (en) | 2014-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210470540.7A Pending CN103779476A (en) | 2012-10-22 | 2012-11-20 | Light-emitting diode packaging structure and light-emitting diode lamp with large illumination angle |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103779476A (en) |
| TW (1) | TW201417343A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1971908A (en) * | 2005-11-23 | 2007-05-30 | 光硕光电股份有限公司 | Three-wavelength LED structure |
| TW200939515A (en) * | 2008-03-04 | 2009-09-16 | Everlight Electronics Co Ltd | Package of light-emitting diode and manufacturing method thereof |
| US20110210366A1 (en) * | 2008-11-18 | 2011-09-01 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| CN202188331U (en) * | 2011-06-17 | 2012-04-11 | 英志企业股份有限公司 | Bulb structure |
| CN102479908A (en) * | 2010-11-25 | 2012-05-30 | 株式会社东芝 | Led package |
| JP2012142426A (en) * | 2010-12-28 | 2012-07-26 | Toshiba Corp | Led package and method for manufacturing the same |
| CN202419217U (en) * | 2011-12-16 | 2012-09-05 | 宁波凯耀电器制造有限公司 | LED (light-emitting diode) bulb lamp with large light-emitting angle |
-
2012
- 2012-10-22 TW TW101138899A patent/TW201417343A/en unknown
- 2012-11-20 CN CN201210470540.7A patent/CN103779476A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1971908A (en) * | 2005-11-23 | 2007-05-30 | 光硕光电股份有限公司 | Three-wavelength LED structure |
| TW200939515A (en) * | 2008-03-04 | 2009-09-16 | Everlight Electronics Co Ltd | Package of light-emitting diode and manufacturing method thereof |
| US20110210366A1 (en) * | 2008-11-18 | 2011-09-01 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| CN102479908A (en) * | 2010-11-25 | 2012-05-30 | 株式会社东芝 | Led package |
| JP2012142426A (en) * | 2010-12-28 | 2012-07-26 | Toshiba Corp | Led package and method for manufacturing the same |
| CN202188331U (en) * | 2011-06-17 | 2012-04-11 | 英志企业股份有限公司 | Bulb structure |
| CN202419217U (en) * | 2011-12-16 | 2012-09-05 | 宁波凯耀电器制造有限公司 | LED (light-emitting diode) bulb lamp with large light-emitting angle |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201417343A (en) | 2014-05-01 |
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