CN103779461A - Substrate and method for recycling substrate - Google Patents

Abstract

The present invention proposes a substrate and a method for recycling the same, wherein a substrate that can be recycled includes: a growth substrate and a preset conversion layer, and the preset conversion layer can transform the growth substrate The bottom is converted into a reflective substrate; one of the methods for recycling the substrate includes the following steps: the growth substrate epitaxially grows the preset conversion layer and the functional layer in turn, and uses an etching solution to selectively eliminate all The preset conversion layer, the obtained growth substrate is reused after the surface treatment step, and the obtained functional layer is prepared by deposition, photolithography, etching and evaporation after the surface treatment step. For silver mirrors, copper substrates are prepared by electroplating. The growth substrate of the present invention can be reused to save cost; at the same time, the As in the growth substrate will not be brought into the subsequent process flow, reducing the pollution treatment cost of industrial wastewater, so that it has obvious technological advancement and good economic benefits.

Description

A kind of substrate and its recycling method

technical field

The invention relates to the field of LEDs, in particular to a substrate and a method for recycling the same.

Background technique

In the preparation process of the epitaxial structure of the existing light-emitting device, the growth substrate is used for one time, or it is directly used as the substrate of the epitaxial structure to form a product, or it is ground to form a product with the epitaxial structure. Growth substrates are mostly used as part of epitaxial structure products.

The currently used red-yellow epitaxial structure growth substrate is GaAs, and the epitaxial structure products using this growth substrate will contain arsenic. In the preparation process of the epitaxial structure using this growth substrate, if the growth substrate thinning process is applied, the industrial wastewater will contain GaAs particles, which increases the pollution of industrial wastewater, and at the same time increases the cost of sewage discharge and wastewater treatment of enterprises. cost. Among them, the corrosion rate of the corrosion stop layer is slow, and the removal is not complete, and subsequent complicated removal processes need to be added.

The reuse of the growth substrate in the present invention makes it have obvious technical advancement and good economic benefits.

Contents of the invention

The invention proposes a substrate and a method for recycling and reusing the same, which solves the problems in the prior art that the growth substrate cannot be reused, which increases the cost and causes environmental pollution.

The technical solution of the present invention is realized in the following way: a substrate that can be recycled and reused includes: a growth substrate and a preset conversion layer, and the preset conversion layer can convert the growth substrate into a reflective substrate.

Further, the growth substrate forms the preset conversion layer through epitaxy, and the preset conversion layer forms a functional layer through epitaxy.

Further, the functional layer forms an adhesive layer by adhesion, and the adhesive layer is attached to the support substrate; or the functional layer is bonded to the support substrate through a bonding medium; the support substrate is specifically a silicon substrate bottom, sapphire substrate or quartz substrate.

Further, the bonding medium can be dissolved by a photoresist remover, and the photoresist remover is specifically acetone.

Further, the bonding medium is a photoresist, and the photoresist is specifically an organic glue medium.

Further, the preset conversion layer can be selectively eliminated by an etching solution, and the etching solution is specifically HF or BOE.

Further, the growth substrate includes GaAs.

Further, the preset conversion layer includes AlAs.

Further, the functional layer includes an epitaxial layer N region, an active region and an epitaxial layer P region; the reflective substrate includes a dielectric layer, a silver mirror and a copper substrate, and the dielectric layer includes SiO ₂ , ITO or Si ₃ N ₄ , the thickness of the copper substrate ranges from 70 μm to 150 μm.

A method for recycling a substrate, comprising the steps of:

a) The growth substrate is epitaxially grown in sequence to form the preset conversion layer and the functional layer;

b) selectively eliminating the preset conversion layer by using an etching solution;

c) reusing the growth substrate obtained in step b) after undergoing a surface treatment step;

d) After the surface treatment step of the functional layer obtained in step b), a dielectric layer and a silver mirror are prepared by deposition, photolithography, etching and evaporation, and a copper substrate is prepared by electroplating.

Further, a method for recycling a substrate, comprising the following steps:

A) epitaxially growing the preset conversion layer and the functional layer sequentially on the growth substrate;

B) The functional layer forms an adhesive layer by adhesion, and the adhesive layer is attached to the supporting substrate; or the functional layer is bonded to the supporting substrate through a bonding medium;

C) selectively eliminating the preset conversion layer by using an etching solution;

D) The growth substrate obtained in step C) is reused after the surface treatment step;

E) After the surface treatment step of the functional layer obtained in step C), a dielectric layer and a silver mirror are prepared by deposition, photolithography, etching and evaporation, and a copper substrate is prepared by electroplating.

Further, the surface treatment step includes at most a polishing step, a detection step, and a cleaning step before and/or after the polishing step, and the polishing step is specifically chemical polishing or mechanical polishing; the cleaning step is specifically the Cleaning with corrosive liquid or water; the detection steps are specifically smoothness detection and surface cleanliness detection.

Further, step G) is performed after the step E), the step G) eliminates the adhesive layer or the bonding medium by an organic solvent dissolution method, and removes the supporting substrate at the same time; the step G ) in the temperature range of 50°C to 100°C.

Further, after the step B) is completed, heat to 90°C-120°C for 10min-30min.

The beneficial effects of the present invention are:

1) The growth substrate can be reused to save costs;

2) As in the growth substrate will not be brought into the subsequent process of light-emitting device preparation, reducing the pollution treatment cost of industrial wastewater;

3) The reflective substrate has good heat dissipation performance.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

FIG. 1 is a schematic structural view of a growth substrate peeled off from an epitaxial wafer in the prior art;

Fig. 2 is a structural schematic diagram of the reuse of the growth substrate of the present invention;

Fig. 3 is a schematic flow chart of an embodiment of the growth substrate recovery and reuse method of the present invention;

Fig. 4 is a schematic flow chart of another embodiment of the growth substrate recycling method of the present invention;

Fig. 5 is a schematic structural diagram after performing step B) in Fig. 4;

Fig. 6 is a schematic structural diagram after performing step C) in Fig. 4;

Fig. 7 is a schematic structural diagram after performing step d) or step G).

In the picture:

1. Growth substrate; 2-1. Etching stop layer; 2-2. Preset conversion layer; 3. N region of epitaxial layer; 4. Active region; 5. P region of epitaxial layer; 6. Bonding medium; 7 , supporting substrate; 8, dielectric layer; 9, silver mirror; 10, copper substrate.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

Example 1

As shown in Figure 2 and Figure 7, a substrate that can be recycled and reused in the present invention includes: a growth substrate 1 and a preset conversion layer 2-2, and the preset conversion layer 2-2 can convert the growth substrate 1 as a reflective substrate. The growth substrate 1 forms the preset conversion layer 2-2 through epitaxy, and the preset conversion layer 2-2 forms a functional layer through epitaxy.

The preset conversion layer 2-2 can be selectively eliminated by an etching solution, and the etching solution is specifically BOE.

Wherein, the growth substrate 1 includes GaAs, and the preset conversion layer 2-2 includes AlAs. The functional layer includes an epitaxial layer N region 3, an active region 4 and an epitaxial layer P region 5; the reflective substrate includes a dielectric layer 8, a silver mirror 9 and a copper substrate 10, the dielectric layer 8 includes SiO ₂ , and the thickness of the copper substrate 10 is 120 μm.

Compared with the peeling situation of the existing growth substrate shown in FIG. 1 using the etch stop layer 2-1, the present invention uses BOE to selectively etch and eliminate the preset conversion layer 2-2, and the elimination is complete and sufficient, so that the growth substrate 1 can Recycling and reuse reduces its use cost, thereby avoiding pollution of the environment by As in the growth substrate 1 .

Example 2

As shown in Figure 2 and Figures 5-7, a substrate that can be recycled and reused in the present invention includes: a growth substrate 1 and a preset conversion layer 2-2, and the preset conversion layer 2-2 can convert the growth substrate 1 Converted to a reflective substrate. The growth substrate 1 forms the preset conversion layer 2-2 through epitaxy, and the preset conversion layer 2-2 forms a functional layer through epitaxy. The functional layer forms an adhesive layer by adhesion which attaches the support substrate 7 . The supporting substrate 7 is specifically a sapphire substrate.

The preset conversion layer 2-2 can be selectively eliminated by an etching solution, and the etching solution is specifically HF.

Wherein, the growth substrate 1 includes GaAs, and the preset conversion layer 2-2 includes AlAs. The functional layer includes the epitaxial layer N region 3, the active region 4 and the epitaxial layer P region 5; the reflective substrate includes a dielectric layer 8, a silver mirror 9 and a copper substrate 10, the dielectric layer 8 includes ITO, and the thickness of the copper substrate 10 is 100 μm .

Compared with the peeling situation of the existing growth substrate shown in FIG. 1 using the etch stop layer 2-1, the present invention uses HF to selectively etch and eliminate the preset conversion layer 2-2, and the elimination is complete and sufficient, so that the growth substrate 1 can be Recycling and reuse reduces its use cost, thereby avoiding pollution of the environment by As in the growth substrate 1 . Example 3

As shown in Figure 2 and Figures 5-7, a substrate that can be recycled and reused in the present invention includes: a growth substrate 1 and a preset conversion layer 2-2, and the preset conversion layer 2-2 can convert the growth substrate 1 Converted to a reflective substrate. The growth substrate 1 forms the preset conversion layer 2-2 through epitaxy, and the preset conversion layer 2-2 forms a functional layer through epitaxy. The functional layer is bonded to a supporting substrate 7 through a bonding medium 6, and the supporting substrate 7 is specifically a quartz substrate.

The preset conversion layer 2-2 can be selectively eliminated by an etching solution, and the etching solution is specifically HF. The bonding medium 6 can be dissolved by a photoresist stripping agent, and the photoresist stripping agent is specifically acetone. The bonding medium 6 is a photoresist, and the photoresist is specifically an organic glue medium.

Wherein, the growth substrate 1 includes GaAs, and the preset conversion layer 2-2 includes AlAs. Functional layer includes epitaxial layer N region 3, active region 4 and epitaxial layer P region 5; reflective substrate includes dielectric layer 8, silver mirror 9 and copper substrate 10, dielectric layer 8 includes Si ₃ N ₄ , copper substrate 10 The thickness is 70 μm.

Compared with the peeling situation of the existing growth substrate shown in FIG. 1 using the etch stop layer 2-1, the present invention uses HF to selectively etch and eliminate the preset conversion layer 2-2, and the elimination is complete and sufficient, so that the growth substrate 1 can be Recycling and reuse reduces its use cost, thereby avoiding pollution of the environment by As in the growth substrate 1 . Example 4

As shown in Figure 2 and Figures 5-7, a substrate that can be recycled and reused in the present invention includes: a growth substrate 1 and a preset conversion layer 2-2, and the preset conversion layer 2-2 can convert the growth substrate 1 Converted to a reflective substrate. The growth substrate 1 forms the preset conversion layer 2-2 through epitaxy, and the preset conversion layer 2-2 forms a functional layer through epitaxy. The functional layer is bonded to a supporting substrate 7 through a bonding medium 6, and the supporting substrate 7 is specifically a silicon substrate.

The preset conversion layer 2-2 can be selectively eliminated by an etching solution, and the etching solution is specifically BOE. The bonding medium 6 can be dissolved by a photoresist stripping agent, and the photoresist stripping agent is specifically acetone. The bonding medium 6 is a photoresist, and the photoresist is specifically an organic glue medium.

Wherein, the growth substrate 1 includes GaAs, and the preset conversion layer 2-2 includes AlAs. The functional layer includes the epitaxial layer N region 3, the active region 4 and the epitaxial layer P region 5; the reflective substrate includes a dielectric layer 8, a silver mirror 9 and a copper substrate 10, and the dielectric layer 8 includes SiO ₂ , ITO or Si ₃ N ₄ , the copper substrate 10 has a thickness of 150 μm.

Compared with the situation that the existing growth substrate shown in FIG. 1 is peeled off by the corrosion stop layer 2-1, the preset conversion layer 2-2 is selectively etched and eliminated by BOE in the present invention, and the elimination is complete and sufficient, so that the growth substrate 1 It can be recycled and reused, which reduces its use cost, thereby avoiding the pollution of the environment caused by As in the growth substrate 1 .

Example 5

As shown in Fig. 2, Fig. 3 and Fig. 7, a method for recycling a substrate of the present invention comprises the following steps:

a) The growth substrate 1 epitaxially grows the preset conversion layer 2-2 and the functional layer in sequence;

b) Selectively eliminate the preset conversion layer 2-2 by using corrosive liquid;

c) reusing the growth substrate 1 obtained in step b) after undergoing a surface treatment step;

d) After the surface treatment step of the functional layer obtained in step b), the dielectric layer 8 and the silver mirror 9 are prepared by deposition, photolithography, etching and evaporation, and the copper substrate 10 is prepared by electroplating.

Wherein, the growth substrate 1 includes GaAs, and the preset conversion layer 2-2 includes AlAs. The functional layer includes an epitaxial layer N region 3, an active region 4 and an epitaxial layer P region 5; the reflective substrate includes a dielectric layer 8, a silver mirror 9 and a copper substrate 10, and the dielectric layer 8 includes SiO ₂ .

Step b) realizes the stripping of the growth substrate 1 , and step d) realizes the combination of the reflective substrates, and realizes the repeated utilization of the growth substrate 1 through the above steps.

Example 6

As shown in Fig. 2, Fig. 3 and Fig. 7, a method for recycling a substrate of the present invention comprises the following steps:

a) The growth substrate 1 epitaxially grows the preset conversion layer 2-2 and the functional layer in sequence;

b) Selectively eliminate the preset conversion layer 2-2 by using corrosive liquid;

c) reusing the growth substrate 1 obtained in step b) after undergoing a surface treatment step;

d) After the surface treatment step of the functional layer obtained in step b), the dielectric layer 8 and the silver mirror 9 are prepared by deposition, photolithography, etching and evaporation, and the copper substrate 10 is prepared by electroplating.

Wherein, the growth substrate 1 includes GaAs, and the preset conversion layer 2-2 includes AlAs. The functional layer includes an epitaxial layer N region 3, an active region 4 and an epitaxial layer P region 5; the reflective substrate includes a dielectric layer 8, a silver mirror 9 and a copper substrate 10, and the dielectric layer 8 includes ITO or Si ₃ N ₄ .

Step b) realizes the stripping of the growth substrate 1 , and step d) realizes the combination of the reflective substrates, and realizes the repeated utilization of the growth substrate 1 through the above steps.

The surface treatment step includes a detection step and a cleaning step; the cleaning step is specifically corrosive solution cleaning or water cleaning; the detection step is specifically smoothness detection and surface cleanliness detection.

Example 7

As shown in Figure 2 and Figures 4-6, a method for recycling a substrate of the present invention comprises the following steps:

A) The growth substrate 1 epitaxially grows the preset conversion layer 2-2 and the functional layer in sequence;

B) The functional layer forms an adhesive layer through adhesion, and the adhesive layer is attached to the supporting substrate 7; or the functional layer is bonded to the supporting substrate 7 through the bonding medium 6;

C) Selectively eliminate the preset conversion layer 2-2 by using an etching solution;

D) The growth substrate 1 obtained in step C) is reused after the surface treatment step;

E) After the surface treatment step of the functional layer obtained in step C), the dielectric layer 8 and the silver mirror 9 are prepared by deposition, photolithography, etching and evaporation, and the copper substrate 10 is prepared by electroplating.

Wherein, the bonding medium 6 can be dissolved by a photoresist remover, and the photoresist remover is specifically acetone. The bonding medium 6 is a photoresist, and the photoresist is specifically an organic glue medium. The growth substrate 1 includes GaAs, and the preset conversion layer 2-2 includes AlAs. The functional layer includes an epitaxial layer N region 3, an active region 4 and an epitaxial layer P region 5; the reflective substrate includes a dielectric layer 8, a silver mirror 9 and a copper substrate 10, and the dielectric layer 8 includes ITO.

Wherein, the surface treatment step includes a polishing step, a detection step, and a cleaning step before and after the polishing step. The polishing step is specifically chemical polishing; the cleaning step is specifically corrosive liquid cleaning; and the detection step is specifically smoothness detection and surface cleanliness detection.

Wherein, after step B) is completed, heat to 90° C. for 30 minutes.

Step C) the growth substrate 1 is peeled off by means of the support substrate 7 , step E) realizes the combination of the reflective substrates, and the growth substrate 1 can be reused through the above steps.

Example 8

As shown in Figure 2 and Figures 4-7, a method for recycling a substrate of the present invention comprises the following steps:

A) The growth substrate 1 epitaxially grows the preset conversion layer 2-2 and the functional layer in sequence;

B) The functional layer forms an adhesive layer by means of adhesion, and the adhesive layer is attached to the supporting substrate 7;

C) Selectively eliminate the preset conversion layer 2-2 by using an etching solution;

D) The growth substrate 1 obtained in step C) is reused after the surface treatment step;

E) After the surface treatment step of the functional layer obtained in step C), the dielectric layer 8 and the silver mirror 9 are prepared by deposition, photolithography, etching and evaporation, and the copper substrate 10 is prepared by electroplating;

G) The adhesive layer is eliminated by organic solvent dissolution method, and the support substrate 7 is removed at the same time.

Wherein, step G) is performed at a temperature of 80°C.

Wherein, after step B) is completed, heat to 120° C. for 10 minutes.

Wherein, the growth substrate 1 includes GaAs, and the preset conversion layer 2-2 includes AlAs. The functional layer includes an epitaxial layer N region 3, an active region 4 and an epitaxial layer P region 5; the reflective substrate includes a dielectric layer 8, a silver mirror 9 and a copper substrate 10, and the dielectric layer 8 includes SiO ₂ .

Step C) the growth substrate 1 is peeled off by means of the support substrate 7 , and step E) realizes the bonding of the reflective substrate, and the growth substrate 1 can be reused through the above steps.

Example 9

As shown in Figure 2 and Figures 4-7, a method for recycling a substrate of the present invention comprises the following steps:

A) The growth substrate 1 epitaxially grows the preset conversion layer 2-2 and the functional layer in sequence;

B) The functional layer forms an adhesive layer by means of adhesion, and the adhesive layer is attached to the supporting substrate 7;

C) Selectively eliminate the preset conversion layer 2-2 by using an etching solution;

D) The growth substrate 1 obtained in step C) is reused after the surface treatment step;

E) After the surface treatment step of the functional layer obtained in step C), the dielectric layer 8 and the silver mirror 9 are prepared by deposition, photolithography, etching and evaporation, and the copper substrate 10 is prepared by electroplating;

G) The adhesive layer is eliminated by organic solvent dissolution method, and the support substrate 7 is removed at the same time.

Wherein, step G) is performed at a temperature of 50°C.

Wherein, after step B) is completed, heat to 110° C. for 15 minutes.

Wherein, the growth substrate 1 includes GaAs, and the preset conversion layer 2-2 includes AlAs. The functional layer includes an epitaxial layer N region 3, an active region 4 and an epitaxial layer P region 5; the reflective substrate includes a dielectric layer 8, a silver mirror 9 and a copper substrate 10, and the dielectric layer 8 includes SiO ₂ .

Step C) the growth substrate 1 is peeled off by means of the support substrate 7 , and step E) realizes the bonding of the reflective substrate, and the growth substrate 1 can be reused through the above steps.

The surface treatment step includes a polishing step, a detection step, and a cleaning step before and after the polishing step. The polishing step is specifically mechanical polishing; the cleaning step is specifically water cleaning; the detection step is specifically smoothness detection and surface cleanliness detection.

Example 10

As shown in Figure 2 and Figures 4-7, a method for recycling a substrate of the present invention comprises the following steps:

A) The growth substrate 1 epitaxially grows the preset conversion layer 2-2 and the functional layer in sequence;

B) The functional layer is bonded to the supporting substrate 7 through the bonding medium 6;

C) Selectively eliminate the preset conversion layer 2-2 by using an etching solution;

D) The growth substrate 1 obtained in step C) is reused after the surface treatment step;

E) After the surface treatment step of the functional layer obtained in step C), the dielectric layer 8 and the silver mirror 9 are prepared by deposition, photolithography, etching and evaporation, and the copper substrate 10 is prepared by electroplating;

G) The bonding medium 6 is eliminated by an organic solvent dissolution method, and the support substrate 7 is removed at the same time.

Wherein, step G) is performed at a temperature of 100°C.

Wherein, after step B) is completed, heat to 100° C. for 20 minutes.

Step C) the growth substrate 1 is peeled off by means of the support substrate 7 , and step E) realizes the bonding of the reflective substrate, and the growth substrate 1 can be reused through the above steps.

In the above embodiments, the preset conversion layer 2-2 has a selective corrosion rate of more than 100,000 times to HF or BOE etching solution. Due to the selective corrosion of the preset conversion layer 2-2, the preset conversion layer 2-2 is corroded. The liquid is ablated, and the functional layer is peeled off from the growth substrate 1 . The stripped growth substrate 1 can be reused after cleaning, testing or polishing.

The functional layer involved in the above embodiments is combined with the support substrate 7 through the bonding medium 6. The purpose of this operation is to combine the two parts of the structural units. In specific implementation, it can be a bonding method, an adhesive method, or other possible methods. A method or technical means to achieve a combined purpose.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the scope of the present invention. within the scope of protection.

Claims (14)

1. a substrate that can recycling, is characterized in that, comprising:

Growth substrates;

Preset conversion layer;

Described preset conversion layer can be converted to reflective by described growth substrates.

2. a kind of substrate that can recycling according to claim 1, is characterized in that, described growth substrates forms described preset conversion layer by extensional mode, and described preset conversion layer forms functional layer by extensional mode.

3. a kind of substrate that can recycling according to claim 2, is characterized in that, described functional layer forms adhesive layer by adhesion mode, the attached support substrates of described adhesive layer; Or described functional layer by bonding medium in conjunction with described support substrates; Described support substrates is specially silicon substrate, Sapphire Substrate or quartz substrate.

4. a kind of substrate that can recycling according to claim 3, is characterized in that, the described bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.

5. a kind of substrate that can recycling according to claim 4, is characterized in that, described bonding medium is photoresist, and described photoresist is specially organic gel medium.

6. a kind of substrate that can recycling according to claim 1, is characterized in that, the described preset conversion layer liquid selectivity that can be corroded is eliminated; Described corrosive liquid is specially HF or BOE.

7. according to a kind of substrate that can recycling described in claim 1～6 any one, it is characterized in that, described growth substrates comprises GaAs.

8. according to a kind of substrate that can recycling described in claim 1～6 any one, it is characterized in that, described preset conversion layer comprises AlAs.

9. according to a kind of substrate that can recycling described in claim 2～6 any one, it is characterized in that, described functional layer comprises epitaxial loayer N district, active area and epitaxial loayer P district; Described reflective comprises dielectric layer, silver mirror and copper substrate, and described dielectric layer comprises SiO ₂, ITO or Si ₃n ₄, described copper substrate thickness range is 70 μ m～150 μ m.

10. substrate claimed in claim 2 carries out a method for recycling, it is characterized in that, comprises the following steps:

A) described growth substrates preset conversion layer and described functional layer described in epitaxial growth successively;

B) utilize corrosive liquid selectivity to eliminate described preset conversion layer;

C) after the described growth substrates process surface treatment step of step b) gained, recycle;

D) after the described functional layer process surface treatment step of step b) gained, prepare dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepare copper substrate by plating mode.

11. 1 kinds of substrates claimed in claim 3 carry out the method for recycling, it is characterized in that, comprise the following steps:

A) described growth substrates successively epitaxial growth form described preset conversion layer and described functional layer;

B) described functional layer forms adhesive layer, the attached support substrates of described adhesive layer by the mode adhering to; Or described functional layer by bonding medium in conjunction with described support substrates;

C) utilize corrosive liquid selectivity to eliminate described preset conversion layer;

D) through step C) the described growth substrates of gained is through after surface treatment step, recycles;

E) through step C) the described functional layer of gained is through after surface treatment step, prepares dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepares copper substrate by plating mode.

12. methods of carrying out recycling according to a kind of substrate described in claim 10 or 11, it is characterized in that, described surface treatment step comprises at the most polishing step, detecting step and is positioned at the cleaning step before or after described polishing step, and described polishing step is specially chemical polishing or mechanical polishing; Described cleaning step is specially described corrosive liquid cleaning or water cleans; Described detecting step is specially smoothness detection and surface cleanness detects.

The method that 13. a kind of substrates according to claim 11 carry out recycling, it is characterized in that, described step e) perform step afterwards G), described step G) eliminate described adhesive layer or described bonding medium by organic solvent dissolution method, remove described support substrates simultaneously; Described step G) in the temperature range of 50 ℃～100 ℃, carry out.

The method that 14. a kind of substrates according to claim 11 carry out recycling, is characterized in that described step B) complete after, be heated to 90 ℃～120 ℃ and maintain 10min～30min.

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