CN103774116B - Plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition - Google Patents
Plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition Download PDFInfo
- Publication number
- CN103774116B CN103774116B CN201210399015.0A CN201210399015A CN103774116B CN 103774116 B CN103774116 B CN 103774116B CN 201210399015 A CN201210399015 A CN 201210399015A CN 103774116 B CN103774116 B CN 103774116B
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- Prior art keywords
- deposition
- passed
- settling chamber
- amorphous silicon
- layer
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- 230000008021 deposition Effects 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 11
- 230000000694 effects Effects 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims description 52
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- 230000007613 environmental effect Effects 0.000 claims description 6
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910000085 borane Inorganic materials 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000012071 phase Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to field of solar energy, particularly for the plasma gas phase deposition apparatus and method for of amorphous silicon battery deposition.The present invention adopts the following technical scheme that: for the plasma gas phase deposition equipment of amorphous silicon battery deposition, it is characterized in that, comprise settling chamber, chamber walls has heat transfer pipe, settling chamber passes through pipeline and external connection, settling chamber comprises the one side door that can open, and deposition chamber interior has motion guide rail and pressure transducer and temperature sensor.Use the present invention of as above technical scheme, have the advantages that coating effects is good, save heating energy source, can accurately realize spacing so that whole plant running is stable.
Description
Technical field
The present invention relates to field of solar energy, particularly for the plasma of amorphous silicon battery deposition
Vapor-phase deposition apparatus and method for.
Background technology
Traditional plasma gas phase deposition equipment all uses external heat, and therefore Btu utilization is the completeest
Entirely, and traditional plasma gas phase deposition equipment controls relatively difficult, and is difficult to reach to need
The effect wanted.
Summary of the invention
The purpose of invention: in order to provide a kind of coating effects good, save heating energy source for non-
The plasma gas phase deposition apparatus and method for of crystal silicon battery deposition.
In order to reach as above purpose, the present invention adopts the following technical scheme that:
Plasma gas phase deposition equipment for amorphous silicon battery deposition, it is characterised in that bag
Containing settling chamber, chamber walls has heat transfer pipe, and settling chamber passes through pipeline and external connection, heavy
Long-pending room comprises the one side door that can open, and deposition chamber interior has motion guide rail and pressure transducer and temperature
Degree sensor.
The further technical scheme of the present invention is, described motion guide rail has two and parallel distribution.
The further technical scheme of the present invention is, described motion guide rail has and can limit fixture fortune
The limited block of dynamic position.
The further technical scheme of the present invention is, described heat transfer pipe is evenly arranged in settling chamber
On three, wall.
The further technical scheme of the present invention is, is made up of heat-barrier material outside described settling chamber
Outer wall.
Another technical scheme of the present invention is:
For amorphous silicon battery deposition plasma vapor deposition method, it is characterised in that comprise as
Lower step:
Deposition set-up procedure；
● preheating depositional environment 150-250 DEG C；
● argon build-up of luminance, cleaning glass surface, the impurity of glass surface is removed with argon ion；
● P layer deposits, and is passed through methane, and the Main Function of methane is to deposit carborundum, as opening
Window layer, upsets spectrum so that more spectrum is absorbed；
● in the case of not build-up of luminance, it is passed through the hydrogen of 30000sccm, carries out the surface after having deposited
Process, destroy the weak bond produced in deposition process；
● hydrogen build-up of luminance prepares；
PIN deposition for the first time；
● transition zone deposits；
● intrinsic layer deposition；
● N shell deposition for the first time；
PIN deposition for the second time；
● end battery P layer (deposition)；
● it is passed through 10000sccmH2, and ionize；
● P layer microcrystalline silicon deposition, adulterate 550sccm borine, 12000sccmH2；
● first it is passed through 15000sccmH2Unionization, does environmental preparation to next step ionization；
● it is passed through 12000sccm and measures H2, and ionize；
● it is passed through 12000sccm H in advance2, prepare for end battery intrinsic microcrystalline layer；
● intrinsic layer deposition, form microcrystalline coating；
● second stage intrinsic layer deposition；
● phase III intrinsic layer deposition；
● fourth stage intrinsic layer deposition；The even resistance of four deposition process meeting formation stages；
● N shell non-crystalline silicon doping deposition, carry out in two stages, the first stage is 10000sccm hydrogen
Throughput, 500sccm borane doping；Second stage is mainly dopant ion deposition, carries
For a large amount of electronics required after forming electric field, ready for producing electric current；
The settling chamber's environmental treatment deposited；
● evacuation process is passed through argon, plays the effect purifying settling chamber；
● ionize under applying argon gas state；
● evacuation.
The further technical scheme of the present invention is, described step deposition set-up procedure and for the first time PIN
Also have the following steps between deposition,
●15500sccm H2Deposition surface is carried out；
● evacuation process is passed through 500sccm argon, plays the effect purifying settling chamber；
● ionize under applying argon gas state；
● evacuation；
● it is flushed with hydrogen under gaseity ionization.
The further technical scheme of the present invention is, in settling chamber's environmental treatment that described step deposition completes
Also comprise the steps of after evacuation completes:
It is flushed with hydrogen under gaseity ionization, is passed through nitrogen, equilibrium air pressure in settling chamber, reduces indoor temperature.
Use the present invention of as above technical scheme, have the advantages that coating effects is good,
Save heating energy source, can accurately realize spacing so that whole plant running is stable.
Accompanying drawing explanation
Accompanying drawing is the structural representation of invention；
Wherein: 1. settling chamber；2. run guide rail；3. radome；4. pressure transducer；5. temperature
Degree sensor；The most automatically controlled part；Outer wall bracket.
Detailed description of the invention
Illustrating embodiments of the invention below in conjunction with the accompanying drawings, embodiment is not constituted this
Bright restriction:
Plasma gas phase deposition equipment for amorphous silicon battery deposition, it is characterised in that bag
Containing settling chamber 1, settling chamber 1 inwall has heat transfer pipe, settling chamber 1 to be connected by pipeline and outside
Connecing, settling chamber 1 comprises the one side door that can open, settling chamber 1 is internal have motion guide rail 2 and
Pressure transducer 4 and temperature sensor 5.
Pressure and temperature can conveniently sense, and to gather internal data, carries out the reality of coating process
Border controls.Internal gas composition and pressure can be regulated by pipeline.
The further technical scheme of the present invention is, described motion guide rail 2 has two and parallel point
Cloth.
This equipment also has inflation inlet, and outside coordinates intelligentized inflation equipment.
Have, on described motion guide rail 2, the limited block that clamp movement position can be limited.Spacing with this
Block is so that the position of fixture is stably fixed, and makes whole decoration stable.
Described heat transfer pipe is evenly arranged on settling chamber 1 inwall three.What inside was logical is heating
Oil.
The further technical scheme of the present invention is, described settling chamber 1 is outside to be made up of heat-barrier material
Outer wall.
The ultimate principle of the present invention, principal character and the present invention excellent has more than been shown and described
Point.Those skilled in the art is it should be recognized that the present invention is not restricted to the described embodiments, above-mentioned
The principle that the present invention is simply described described in embodiment and description, without departing from present invention essence
On the premise of god and scope, the present invention also has various changes and modifications, these changes and improvements
Both fall within claimed scope.
Claims (3)
1. for amorphous silicon battery deposition plasma vapor deposition method, it is characterised in that comprise as
Lower step:
Deposition set-up procedure；
● preheating depositional environment 150-250 DEG C；
● argon build-up of luminance, cleaning glass surface, the impurity of glass surface is removed with argon ion；
● P layer deposits, and is passed through methane, and the Main Function of methane is to deposit carborundum, as layer of windowing,
Upset spectrum so that more spectrum is absorbed；
● in the case of not build-up of luminance, it is passed through the hydrogen of 30000sccm, carries out the surface after having deposited
Reason, destroys the weak bond produced in deposition process；
● hydrogen build-up of luminance prepares；
PIN deposition for the first time；
● transition zone deposits；
● intrinsic layer deposition；
● N shell deposition for the first time；
PIN deposition for the second time；
● battery P layer (deposition)；
● it is passed through 10000sccmH2, and ionizes；
● P layer microcrystalline silicon deposition, adulterate 550sccm borine, 12000sccmH2；
● first it is passed through 15000sccmH2 unionization, does environmental preparation to next step ionization；
● it is passed through 12000sccm and measures H2, and ionize；
● it is passed through 12000sccm H2 in advance, prepares for battery intrinsic microcrystalline layer；
● intrinsic layer deposition, form microcrystalline coating；
● second stage intrinsic layer deposition；
● phase III intrinsic layer deposition；
● fourth stage intrinsic layer deposition；The even resistance of four deposition process meeting formation stages；
● N shell non-crystalline silicon doping deposition, carry out in two stages, the first stage is 10000sccm hydrogen
Flow, 500sccm borane doping；Second stage is mainly dopant ion deposition, it is provided that form electric field
Rear required a large amount of electronics, ready for producing electric current；
The settling chamber's environmental treatment deposited；
● evacuation process is passed through argon, plays the effect purifying settling chamber；
● ionize under applying argon gas state；
● evacuation.
2. the plasma gas phase deposition side for amorphous silicon battery deposition as claimed in claim 1
Method, it is characterised in that also have as follows between described step deposition set-up procedure and for the first time PIN deposition
Step,
● deposition surface is carried out by 15500sccm H2；
● evacuation process is passed through 500sccm argon, plays the effect purifying settling chamber；
● ionize under applying argon gas state；
● evacuation；
● it is flushed with hydrogen under gaseity ionization.
3. the plasma gas phase deposition side for amorphous silicon battery deposition as claimed in claim 1
Method, it is characterised in that in settling chamber's environmental treatment that described step deposition completes after evacuation completes also
Comprise the steps of:
It is flushed with hydrogen under gaseity ionization, is passed through nitrogen, equilibrium air pressure in settling chamber, reduces indoor temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210399015.0A CN103774116B (en) | 2012-10-19 | 2012-10-19 | Plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210399015.0A CN103774116B (en) | 2012-10-19 | 2012-10-19 | Plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103774116A CN103774116A (en) | 2014-05-07 |
| CN103774116B true CN103774116B (en) | 2016-09-21 |
Family
ID=50566859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210399015.0A Active CN103774116B (en) | 2012-10-19 | 2012-10-19 | Plasma gas phase deposition apparatus and method for for amorphous silicon battery deposition |
Country Status (1)
| Country | Link |
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| CN (1) | CN103774116B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1339617A (en) * | 2000-06-12 | 2002-03-13 | 安捷伦科技有限公司 | Chemical gas phase deposit method for non-crystalline silicon and forming film |
| CN201801589U (en) * | 2010-09-25 | 2011-04-20 | 深圳市拓日新能源科技股份有限公司 | Amorphous-silicon film plasma enhanced chemical vapor deposition equipment |
| CN102194730A (en) * | 2010-03-15 | 2011-09-21 | 三星电子株式会社 | Substrate transfer container, gas purge monitoring tool, and semiconductor manufacturing equipment with the same |
| CN102208477A (en) * | 2011-05-26 | 2011-10-05 | 南开大学 | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof |
| CN102282676A (en) * | 2009-01-19 | 2011-12-14 | 欧瑞康太阳能股份公司(特吕巴赫) | Thin-film silicon tandem cell |
| CN202898537U (en) * | 2012-10-19 | 2013-04-24 | 陕西拓日新能源科技有限公司 | Plasma vapor deposition equipment for amorphous silicon battery deposition |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6680489B1 (en) * | 1995-12-20 | 2004-01-20 | Advanced Technology Materials, Inc. | Amorphous silicon carbide thin film coating |
-
2012
- 2012-10-19 CN CN201210399015.0A patent/CN103774116B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1339617A (en) * | 2000-06-12 | 2002-03-13 | 安捷伦科技有限公司 | Chemical gas phase deposit method for non-crystalline silicon and forming film |
| CN102282676A (en) * | 2009-01-19 | 2011-12-14 | 欧瑞康太阳能股份公司(特吕巴赫) | Thin-film silicon tandem cell |
| CN102194730A (en) * | 2010-03-15 | 2011-09-21 | 三星电子株式会社 | Substrate transfer container, gas purge monitoring tool, and semiconductor manufacturing equipment with the same |
| CN201801589U (en) * | 2010-09-25 | 2011-04-20 | 深圳市拓日新能源科技股份有限公司 | Amorphous-silicon film plasma enhanced chemical vapor deposition equipment |
| CN102208477A (en) * | 2011-05-26 | 2011-10-05 | 南开大学 | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof |
| CN202898537U (en) * | 2012-10-19 | 2013-04-24 | 陕西拓日新能源科技有限公司 | Plasma vapor deposition equipment for amorphous silicon battery deposition |
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| Publication number | Publication date |
|---|---|
| CN103774116A (en) | 2014-05-07 |
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