CN103764874B - For including the etchant of the metal level of copper and titanium - Google Patents
For including the etchant of the metal level of copper and titanium Download PDFInfo
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- CN103764874B CN103764874B CN201180073121.3A CN201180073121A CN103764874B CN 103764874 B CN103764874 B CN 103764874B CN 201180073121 A CN201180073121 A CN 201180073121A CN 103764874 B CN103764874 B CN 103764874B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention provides a kind of etchant for metal level, and specifically, metal level includes copper and titanium, and this etchant includes persulfate, fluorochemical, mineral acid, cyclic amine compound, chlorine-containing compound, phosphate and water.
Description
Technical field
The present invention relates to a kind of etchant for metal level, this metal level includes copper and titanium, and for semiconductor device and the gate wirings of panel display apparatus (especially thin film transistor (TFT) (TFT)), source/drain distribution, gate electrode and source/drain electrode.
Background technology
The operation forming metal wiring on the substrate of semiconductor device and panel display apparatus generally comprises procedure below: form metal level by sputtering；Coating, exposed and developed photoetching agent pattern on selection area；And implement etching.Additionally, be etched process before each independent step or after each independent step.
Etching process represents to be made to make metal layer patterning process as mask, and generally include the wet etch process using isoionic dry etch process or use etching solution with photoresist.
In recent years, in semiconductor device or panel display apparatus, the resistance of metal wiring has become main misgivings.Owing to resistance is the principal element causing RC signal delay, thus extremely important when increasing the panel size of panel display apparatus and realizing high-resolution display.
In order to realize the reduction of the RC signal delay needed for panel display apparatus, it is necessary to development low electrical resistant material.Main chromium (Cr, the resistivity: 12.7 × 10 used in prior art-8Ω m), molybdenum (Mo, resistivity: 5 × 10-8Ω m), aluminum (Al, resistivity: 2.65 × 10-8Ω m) and their alloy are difficult to use in grid and the data interconnection of large-sized TFTLCD.
In the case, the layers of copper of new low resistance metal layer obtains great concern.This is because it is known that the resistance of layers of copper is markedly inferior to the resistance of aluminium lamination or layers of chrome, and significant environmental problem will not be produced.But, copper causes many difficulties in the process for coating photoresist and patterned photo glue, and finds that it is less preferably attached to silicon insulating barrier.
Therefore, now having have studied many metal levels of the shortcoming overcoming low resistance copper monolayer, wherein, copper-titanium bilayer is especially paid close attention to.
But, in the process that etch copper-titanium is double-deck, it has a problem in that: the different etching solutions of different components should be used for each layer.Specifically, in order to etch the metal level including copper, mainly use hydroperoxide kind or potassium hydrogen persulfate (OXONE) class etchant.But, the shortcoming of hydroperoxide kind etchant is in that it can be decomposed and can be unstable over time.And the shortcoming of potassium hydrogen persulfate class etchant to be in that its etch-rate low and can be unstable in time.
Summary of the invention
The present invention completes in view of the problem having in above-mentioned prior art, and it is an object of the present invention to provide the etchant of a kind of metal level for including copper and titanium, this etchant can present excellent etch features, and still maintains this etch features when aging.
To achieve these goals, it is an aspect of the invention to provide the etchant of a kind of metal level for including copper and titanium, this etchant includes persulfate, fluorochemical, mineral acid, cyclic amine compound, chlorine-containing compound, phosphate and water.
Preferably, the etchant of the present invention includes: based on the gross weight of said composition, the water of the persulfate of 5～20 weight %, the fluorochemical of 0.01～2 weight %, the mineral acid of 1～10 weight %, the cyclic amine compound of 0.3～3 weight %, the chlorine-containing compound of 0.1～3 weight %, the phosphate of 0.1～5 weight % and surplus.
Another aspect of the present invention is to provide a kind of method manufacturing semiconductor device or panel display apparatus, and the method includes the process using this etchant to etch the metal level including copper and titanium.
In the present invention, panel display apparatus can be thin film transistor (TFT) (TFT) array base palte.
As it has been described above, the etchant of the present invention can include the metal level of copper and titanium by Wet-type etching, for instance there is the bilayer of copper (Cu)/titanium (Ti) structure, therefore simplify etching step and improved production power.
The etchant of the present invention also can present quick etch-rate and can etch equably, therefore presents excellent etching performance.Further, since aging time the etching solution that causes of dissolving metal in concentration of metal ions increase, the etchant of the present invention can be effectively prevented the change of cone angle, thus maintains fixing profile.
Additionally, the etchant of the present invention not damage equipment, do not need expensive equipment when etching, and larger display panels can be advantageously applied for, thus providing very big economic interests.
Additionally, except including the metal level of copper and titanium, the etchant of the present invention can etch IZO or a-ITO for pixel electrode.Equally, when the metal level including copper and titanium is used to source/drain electrode and IZO or a-ITO is used to pixel electrode, the etchant of the present invention can etch source/drain electrode and pixel electrode together.
It addition, copper can be obtained quick etch-rate without containing hydrogen peroxide and/or potassium hydrogen persulfate by the etchant of the present invention.
Detailed description of the invention
Hereinafter, the present invention be will be further detailed.
The present invention relates to the etchant of a kind of metal level for including copper and titanium, this etchant includes persulfate, fluorochemical, mineral acid, cyclic amine compound, chlorine-containing compound, phosphate and water.
In the present invention, including the metal level of copper and titanium it is the multilamellar such as including copper base metal layer and titanium-based metal layer.Copper base metal layer represents that layers of copper or copper alloy layer, the embodiment of copper base metal layer include CuN layer, CuO layer and Cu-Al alloy-layer.Titanium-based metal layer represents that titanium layer or titanium alloy layer, the embodiment of titanium-based metal layer include Ti layer and Mo-Ti alloy-layer.
Embodiment including copper base metal layer and the multilamellar of titanium-based metal layer includes: include the copper base metal layer as lower floor and " the titanium-based metal layer/copper base metal layer " of the titanium-based metal layer as upper strata；" copper base metal layer/titanium-based metal layer " including the copper base metal layer as upper strata and the titanium-based metal layer as lower floor；And include three layers or the multilamellar more than three layers, wherein copper base metal layer and titanium-based metal layer are deposited each other, such as titanium-based metal layer/copper base metal layer/titanium-based metal layer or copper base metal layer/titanium-based metal layer/copper base metal layer.
This multiple structure is it is contemplated that following and formed: for top layer or the material of bottom, the sticking of interlayer.It is also possible to by copper base metal layer and titanium-based metal layer combination with one another in every way, but it is not intended to the thickness of its each layer.Such as copper base metal layer comparable titanium-based metal thickness or thin.
Meanwhile, the etchant of the present invention have the advantage that for: it can not only etch the metal level including copper and titanium, it is also possible to etching is for IZO or a-ITO of pixel electrode.
Can having the purity for semiconductor technology by etchant that conventional method prepares the present invention and the etchant preferably prepared, described etchant includes persulfate, fluorochemical, mineral acid, cyclic amine compound, chlorine-containing compound, phosphate and water.
The persulfate used in the present invention is used as the primary oxidizers of etch copper base metal layer.Although persulfate does not limit especially, but it can be such as persulfate be the one selected from Ammonium persulfate. (APS), sodium peroxydisulfate (SPS), potassium peroxydisulfate (PPS) etc., or two kinds or above mixture.
Gross weight based on the present composition, it is preferable that containing the persulfate of 5～20 weight %, more preferably contain the persulfate of 7～18 weight %.When the amount of the persulfate contained drops in above-mentioned scope, the copper base metal layer that the etching of this etchant is appropriate, and etching outline is excellent.
If the amount of the persulfate contained is less than 5 weight %, then the etch-rate of metal level can reduce and cannot reach sufficient etching.On the other hand, if the content of persulfate is more than 20 weight %, the etch-rate of metal level is too fast and is difficult to control to etching degree, and result may exceedingly etch titanium layer and layers of copper.
The fluorochemical used in the present invention is used as the main component of etching titanium-based metal layer, IZO or a-ITO.Fluorochemical can be any compound that can dissociate ion or polyatom fluorion.Although fluorochemical does not limit especially, but it can be the one being selected from ammonium fluoride, sodium fluoride, potassium fluoride, hydrofluorination ammonium, sodium hydro-fluoride, potassium hydro-fluoride etc., or two kinds or above mixture.
Gross weight based on compositions, it is preferable that containing the fluorochemical of 0.01～2 weight %, more preferably contain the fluorochemical of 0.05～1 weight %.If the amount of fluorochemical is less than 0.01 weight %, then the etch-rate of titanium-based metal layer can reduce and produce residue, and if the amount of the fluorochemical contained is more than 2 weight %, then can damaged substrate (such as glass) and siliceous insulating barrier.
The mineral acid used in the present invention is for oxidation and etch copper base metal layer, and titania based metal level.Although mineral acid does not limit especially, but it can be the one being selected from nitric acid, sulphuric acid, phosphoric acid, excessively chloric acid etc., or two kinds or above mixture.
Gross weight based on the present composition, it is preferable that containing the mineral acid of 1～10 weight %, it is more preferred to containing the mineral acid of 2～7 weight %.If the amount of mineral acid is less than 1 weight %, then the etch-rate of metal level can reduce and cause bad etch profile and residue.If the amount of mineral acid is more than 10 weight %, over etching can be there is, and photoresist can split and cause distribution short circuit owing to etching solution permeates.
The cyclic amine compound used in the present invention for forming profile when etch copper base metal layer.Although cyclic amine compound does not limit especially, but it is preferably azole compounds.Such as, the one in 5-Aminotetrazole, tolyl-triazole, benzotriazole, methylbenzotrazole, imidazoles etc. or two kinds or above mixture can be used.
Gross weight based on the present composition, it is preferable that containing the cyclic amine compound of 0.3～3 weight %, more preferably contain the cyclic amine compound of 0.5～2 weight %.When the amount of the cyclic amine compound contained drops in above-mentioned scope, this etchant has the copper etch-rate providing suitable, forms suitable cone angle (taperangle), and controls the effect of the amount of side etching.
If the amount of the cyclic amine compound contained is less than 0.3 weight %, then the etch-rate of layers of copper can increase and cause layers of copper over etching, and if the amount of the cyclic amine compound contained is more than 3 weight %, then copper etch-rate can reduce and cannot obtain required etching degree.
The chlorine-containing compound used in the present invention is used as the cooxidant of etch copper base metal layer.Chlorine-containing compound can be any compound that can dissociate chloride ion.Such as, chlorine-containing compound can be selected from hydrochloric acid (HCl), sodium chloride (NaCl), potassium chloride (KCl), ammonium chloride (NH4Etc. Cl) one, or two kinds or above mixture.
Gross weight based on compositions, it is preferable that containing the chlorine-containing compound of 0.1～3 weight %, and more preferably contain the chlorine-containing compound of 0.5～2 weight %.When the chlorine-containing compound contained drops in above-mentioned scope, this etchant has the effect more effectively forming cone angle.
When the amount of the chlorine-containing compound contained is less than 0.1 weight %, cone angle is too low and poppet surface is roughening, thus coming into question at subsequent step.On the other hand, if the amount of the chlorine-containing compound contained is more than 3 weight %, then cone angle is too high and cause bad stage covering in subsequent step.
The phosphate used in the present invention for maintaining the cone angle of etched copper constantly in aging period, thus forming good profile.Although phosphate does not limit especially, but it can be the one being selected from ammonium phosphate, sodium phosphate, potassium phosphate etc., or two kinds or above mixture.
Gross weight based on the present composition, it is preferable that containing the phosphate of 0.1～5 weight %, and more preferably contain the phosphate of 0.5～3 weight %.When the phosphatic amount contained drops in above-mentioned scope, this etchant can be effectively prevented the cone angle change caused when aging due to dissolving metal, so can obtain continuous and good etching outline.
If the phosphatic amount contained is less than 0.1 weight %; the cone angle then caused due to dissolving metal is changed significantly and etch quantity also can change; if the phosphatic amount contained is more than 5 weight %, then the etch-rate of titanium will slowly cause the long titanium tail maybe cannot by the problem of its etching.
The water used in the present invention is deionized water.Water be for semiconductor technology with water, and be preferably there is the water that resistivity is 18M Ω/cm or higher.The contained water yield is the amount making the gross weight of the present composition reach 100 weight %.
Except mentioned component, the etchant of the present invention can farther include to be selected from one or more additive of etching control agent, surfactant, metal ion chelation agent, corrosion inhibitor etc..
It is described in further detail the present invention below with reference to embodiment, but the scope of the present invention is not limited by these embodiments.
Embodiment 1 and comparative example 1: the preparation of etchant
Composition and content according to table 1 below and prepare each etchant of 180kg.
[table 1]
Remarks: APS: Ammonium persulfate.；ABF: sodium hydro-fluoride ammonium；
ATZ:5-Aminotetrazole；PPM: potassium dihydrogen phosphate
Test case: the assessment of etchant performance
Silicon layer (SiNx layer) is deposited on the glass substrate, and layers of copper and titanium layer are sequentially deposited on silicon layer, thus it is double-deck to form copper/titanium.Photoresist is applied to titanium layer by predetermined pattern, and obtained substrate cut is become the size of 550x650 millimeter, thus preparing test sample.
The assessment > of < etching performance
Each etchant of embodiment 1 and comparative example 1 is introduced spraying type etch system (ETCHER(TFT purchased from SEMES) type) in, then it is set in the temperature of 25 DEG C and heats.After temperature has arrived 30 ± 0.1 DEG C, it is etched step.Based on EPD, total etching period is set to 40%.Test sample is placed in system and sprays by said composition.After etching terminates, test sample is taken out from system, clean with deionized water, use air drier to be dried, then use PR remover to remove photoresist (PR).After rinsing and drying, scanning electron microscope (SEM) (the S-4700 type purchased from HITACHI) is used to assess etching performance.
The assessment > of etching performance when < is aging
The each etchant using embodiment 1 and comparative example 1 carries out referential etching (referenceetch), is subsequently adding 4000ppm copper powder and makes in its each compositions remained after being dissolved completely in referential etching.Then use each compositions to be etched test, and the situation that cone angle deviates 40 °～60 ° is evaluated as bad.
Table 2 below illustrates the result of assessment.
[table 2]
| Etching performance | Etching performance time aging | |
| Embodiment | ◎ | ◎ |
| Comparative example 1 | ◎ | X |
[etching performance evaluation criteria]
◎: very excellent (CD is crooked: 1 micron, cone angle: 40 °～60 °)
O: excellent (CD is crooked: 1.5 microns, cone angle: 30 °～60 °)
△: good (CD is crooked: 2 microns, cone angle: 30 °～60 °)
X: bad (loss metal level and generation residue)
[time aging etching property assessment level]
◎: very excellent the scope of 40 °～60 ° (cone angle maintain)
X: bad (scope of cone angle deviation 40 °～60 °)
By above table 2 it can be seen that according to embodiments of the present invention the compositions of 1 show excellent etching property, and etching property is constant when aging, and the situation of the compositions at comparative example, and cone angle changes and cannot keep fixing when aging.
Claims (13)
1., for including an etchant for the metal level of copper and titanium, described etchant includes:
Based on the gross weight of described compositions, the water of the persulfate of 5～20 weight %, the fluorochemical of 0.01～2 weight %, the mineral acid of 1～10 weight %, the cyclic amine compound of 0.3～3 weight %, the chlorine-containing compound of 0.1～3 weight %, the phosphate of 0.1～5 weight % and surplus.
2. etchant according to claim 1, wherein, described persulfate is at least one in the group that the free Ammonium persulfate. of choosing, sodium peroxydisulfate and potassium peroxydisulfate form.
3. etchant according to claim 1, wherein, described fluorochemical is at least one in the group that the free ammonium fluoride of choosing, sodium fluoride, potassium fluoride, hydrofluorination ammonium, sodium hydro-fluoride and potassium hydro-fluoride form.
4. etchant according to claim 1, wherein, described mineral acid is the free nitric acid of choosing, sulphuric acid, phosphoric acid and at least one crossed in the group that chloric acid forms.
5. etchant according to claim 1, wherein, described cyclic amine compound is azole compounds.
6. etchant according to claim 1, wherein, described cyclic amine compound is at least one in the group that the free 5-Aminotetrazole of choosing, tolyl-triazole, benzotriazole, methylbenzotrazole and imidazoles form.
7. etchant according to claim 1, wherein, described chlorine-containing compound is at least one in the group that the free hydrochloric acid of choosing, sodium chloride, potassium chloride and ammonium chloride form.
8. etchant according to claim 1, wherein, described phosphate is at least one in the group that the free ammonium phosphate of choosing, sodium phosphate and potassium phosphate form.
9. etchant according to claim 1, wherein, described metal level is the multilamellar including copper base metal layer and titanium-based metal layer.
10. etchant according to claim 9, wherein, described copper base metal layer is layers of copper or copper alloy layer, and described titanium-based metal layer is titanium layer or titanium alloy layer.
11. the method manufacturing semiconductor device, described method includes the process using the etchant described in claim 1 to etch the metal level including copper and titanium.
12. the method manufacturing panel display apparatus, described method includes the process using the etchant described in claim 1 to etch the metal level including copper and titanium.
13. method according to claim 12, wherein said panel display apparatus is thin-film transistor array base-plate.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/KR2011/006457 WO2013032047A1 (en) | 2011-08-31 | 2011-08-31 | Etchant liquid composition for a metal layer, including copper and titanium |
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| Publication Number | Publication Date |
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| CN103764874A CN103764874A (en) | 2014-04-30 |
| CN103764874B true CN103764874B (en) | 2016-07-27 |
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| KR102218669B1 (en) * | 2014-06-27 | 2021-02-22 | 동우 화인켐 주식회사 | Etching solution composition for metal layer and manufacturing method of an array substrate for Liquid crystal display using the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298117A (en) * | 1993-07-19 | 1994-03-29 | At&T Bell Laboratories | Etching of copper-containing devices |
| CN1677248A (en) * | 2004-03-31 | 2005-10-05 | 东友Fine-Chem株式会社 | Photoresist stripper composition |
| CN101265579A (en) * | 2007-03-15 | 2008-09-17 | 东进世美肯株式会社 | Etchant for thin film transistor liquid crystal display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1195895C (en) * | 1997-01-29 | 2005-04-06 | 美克株式会社 | Micro etching agent of copper and copper alloy |
| KR20040107546A (en) * | 2003-06-13 | 2004-12-21 | 이승희 | an etching solution |
| EP1894230A2 (en) * | 2005-06-13 | 2008-03-05 | Advanced Technology Materials, Inc. | Compositions and methods for selective removal of metal or metal alloy after metal silicide formation |
| KR101426564B1 (en) * | 2008-02-15 | 2014-08-06 | 동우 화인켐 주식회사 | Method for manufacturing array substrate for liquid crystal display |
| KR100983060B1 (en) * | 2008-05-26 | 2010-09-20 | (주)이그잭스 | Etchants for Non-Hydrogen Peroxide Copper or Copper Alloy Films |
| KR20100040010A (en) * | 2008-10-09 | 2010-04-19 | (주)이그잭스 | Echant with low concentration of hydrogen peroxide for layers of copper or copper alloy |
| KR20100040004A (en) * | 2008-10-09 | 2010-04-19 | (주)이그잭스 | Echant without hydrogen peroxide for layers of copper or copper alloy |
| TWI480360B (en) * | 2009-04-03 | 2015-04-11 | Du Pont | Etchant composition and method |
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- 2011-08-31 WO PCT/KR2011/006457 patent/WO2013032047A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298117A (en) * | 1993-07-19 | 1994-03-29 | At&T Bell Laboratories | Etching of copper-containing devices |
| CN1677248A (en) * | 2004-03-31 | 2005-10-05 | 东友Fine-Chem株式会社 | Photoresist stripper composition |
| CN101265579A (en) * | 2007-03-15 | 2008-09-17 | 东进世美肯株式会社 | Etchant for thin film transistor liquid crystal display device |
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| CN103764874A (en) | 2014-04-30 |
| WO2013032047A1 (en) | 2013-03-07 |
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