CN103715356A - A kind of organic solar cell based on MoO3/Ag anode and preparation method thereof - Google Patents
A kind of organic solar cell based on MoO3/Ag anode and preparation method thereof Download PDFInfo
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- CN103715356A CN103715356A CN201310729340.3A CN201310729340A CN103715356A CN 103715356 A CN103715356 A CN 103715356A CN 201310729340 A CN201310729340 A CN 201310729340A CN 103715356 A CN103715356 A CN 103715356A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 title abstract 6
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- 230000008020 evaporation Effects 0.000 claims description 20
- 238000001704 evaporation Methods 0.000 claims description 20
- 230000005540 biological transmission Effects 0.000 claims description 19
- 238000002207 thermal evaporation Methods 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 13
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Substances ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- JEDHEMYZURJGRQ-UHFFFAOYSA-N 3-hexylthiophene Chemical compound CCCCCCC=1C=CSC=1 JEDHEMYZURJGRQ-UHFFFAOYSA-N 0.000 claims description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 2
- 229910003472 fullerene Inorganic materials 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000005525 hole transport Effects 0.000 abstract 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229960001296 zinc oxide Drugs 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明公开了一种基于MoO3／Ag阳极的有机太阳能电池及其制备方法，所述基于MoO3／Ag阳极的有机太阳能电池自下而上依次包括厚度为1mm的玻璃衬底，厚度为2-10nm的MoO3中间层和厚度为7-13nm的Ag层，厚度为10nm的MoO3空穴传输层，厚度为80-100nm的P3HT∶PCBM有效层，厚度为100nm的Al阴极层。本发明的基于MoO3／Ag阳极的有机太阳能电池充分利用了Ag本征的柔韧性和高电导率，使得电极能适用于柔性衬底，进而应用到有机太阳能电池卷对卷大规模生产中去；同时MoO3中间层的引入，能够促进Ag膜的横向生长和降低所需要Ag层的厚度，进一步减少电极成本。
The invention discloses an organic solar cell based on MoO 3 /Ag anode and a preparation method thereof. The organic solar cell based on MoO 3 /Ag anode sequentially includes a glass substrate with a thickness of 1mm from bottom to top, and a thickness of 2- 10nm MoO3 intermediate layer and Ag layer with a thickness of 7-13nm, a MoO3 hole transport layer with a thickness of 10nm, a P3HT:PCBM effective layer with a thickness of 80-100nm, and an Al cathode layer with a thickness of 100nm. The organic solar cell based on the MoO 3 /Ag anode of the present invention makes full use of the inherent flexibility and high conductivity of Ag, so that the electrode can be applied to flexible substrates, and then applied to the roll-to-roll mass production of organic solar cells ; At the same time, the introduction of the MoO 3 intermediate layer can promote the lateral growth of the Ag film and reduce the thickness of the required Ag layer, further reducing the cost of the electrode.
Description
Technical field
The invention belongs to microelectronics technology, relate to the preparation method of organic solar batteries, particularly a kind of based on MoO
3organic solar batteries of/Ag anode and preparation method thereof.
Technical background
Along with sharply increase and the continuous attention to environmental protection of energy demand, people are increasing for the demand of clean energy resource.Solar energy is inexhaustible, nexhaustible, cheap pollution-free, be the energy that the mankind can freely be used, and solar cell is the effective means of utilizing solar energy.But the high cost of prevailing silica-based solar cell has greatly hindered its development and has popularized.And organic material has the advantages such as cost is low, the absorption coefficient of light is high, quality is light, pliability is good, manufacturing process is simple, make its application in solar cell cause people's extensive concern.Organic solar batteries has become one of most promising solar battery technology of future generation, the focus in solar energy research field, the Ye Shi world.
The major parameter of organic solar batteries for example fill factor, curve factor and short-circuit current density depends on series resistance and the light transmission of transparency electrode to a great extent.In organic solar batteries, most widely used transparent electrode material general, that technology is the most ripe is indium tin oxide (ITO) at present, and the many achievements in research that before obtain are all based on ito transparent electrode.But on the earth, the content of indium is lower; And will on substrate, form the conventional preparation technology's (as sputter, thermal evaporation, pulsed laser deposition etc.) of ITO electrode equipment is had to certain requirement, cost is also more expensive; Thereby the cost of ito transparent electrode is difficult to reduce, be unfavorable for the large-scale production of organic solar batteries.The commercialization trend in organic solar batteries future is mainly large area and flexibility (collapsible).And the fragility of ito transparent electrode and the unsteadiness under acidity, pressure condition also allow it cannot adapt to the commercialization trend of organic solar batteries.So people start actively to find the substitution material of ITO, and a lot of trials have been done.The transparent anode that is not all successfully used as organic solar batteries containing transparent conductive oxide (as sowing doping zinc-oxide (GZO) and aluminium-doped zinc oxide (AZO)), nano silver wire, Graphene and the carbon nano-tube of indium substitutes ITO.
These methods also have they self defect.Although the cost of GZO and AZO will be lower than ITO, these two kinds of electrodes still need high temperature sputtering technology on being deposited to substrate time, cannot be applied in flexible substrate.And the preparation technology of nano silver wire, Graphene and carbon nano-tube is conventionally very complicated, be not suitable for the application of extensive device aspect.
Summary of the invention
The object of the invention is to overcome the shortcoming that ITO electrode cannot be applied to flexible substrate, provide a kind of based on MoO
3the preparation method of the organic solar batteries of/Ag anode can also effectively be applicable to volume to volume large-scale production process when greatly reducing battery cost.
Realize the object of the invention key problem in technology as follows:
A kind of based on MoO
3the organic solar batteries of/Ag anode, comprises that thickness is the glass substrate of 1mm from bottom to top, the MoO that thickness is 2-10nm successively
3intermediate layer and thickness are the Ag layer of 7-13nm, the MoO that thickness is 10nm
3hole transmission layer, the effective layer of the P3HT that thickness is 80-100nm: PCBM, the Al cathode layer that thickness is 100nm; The pliability of Ag itself and high conductivity have guaranteed this MoO
3/ Ag anode can substitute the preparation that ITO is applicable to the organic solar batteries based on flexible substrate; MoO
3the introducing in intermediate layer can effectively reduce required Ag layer thickness, further reduces cost.
A kind of based on MoO
3the preparation method of the organic solar batteries of/Ag anode, comprises the steps:
(1) glass substrate is cleaned;
(2) sample is put into the metallic room of integrated multi-source multicell coating system, with the mode MoO that evaporation thickness is 2-10nm in described glass substrate of thermal evaporation
3intermediate layer, the vacuum degree of metallic room is 5 * 10
-4pa;
(3) use the mode of thermal evaporation at described MoO
3the Ag layer that on intermediate layer, evaporation thickness is 7-13nm, the vacuum degree of metallic room is 5 * 10
-4pa;
(4) with the mode MoO that evaporation thickness is 10nm on described Ag layer of thermal evaporation
3hole transmission layer, the vacuum degree of metallic room is 5 * 10
-4pa;
(5) derivative (PCBM) of the polymer of 3-hexyl thiophene (P3HT) and fullerene is dissolved in respectively and in 1,2-chlorobenzene, forms the solution that concentration is 18mg/ml, then within 1: 0.8 by volume, be configured to mixed liquor;
(6) sample is moved on the whirl coating platform in glove box, by the above-mentioned P3HT of whirl coating spin coating: the mode of PCBM mixed liquor is at described MoO
3on hole transmission layer, obtain the effective layer of the P3HT that thickness is 80-100nm: PCBM, the rotating speed of whirl coating platform is 1200rpms, and the time is 60s;
(7) sample is retracted from glove box in the metallic room of integrated multi-source multicell coating system, the mode of deposited by electron beam evaporation is at described P3HT: the PCBM Al cathode layer that effectively the upper evaporation thickness of layer is 100nm, and the vacuum degree of metallic room is 5 * 10
-4pa;
(8) sample is moved to glove box (nitrogen atmosphere) from metallic room, carry out annealing operation.Annealing temperature is 140-150 ℃, and the time is 10-15min.
Tool of the present invention has the following advantages:
1. due to MoO
3all adopt thermal evaporation technique with the preparation of Ag layer, integrated artistic temperature is not high, so on being deposited to flexible substrate time, can not produce damage to substrate.
2. due to pliability and the high conductivity of Ag itself, make this MoO
3/ Ag anode has good conductivity and can be applicable to flexible substrate.
3. due to MoO
3the introducing in intermediate layer, greatly reduces required Ag layer thickness, has further reduced the cost of electrode.
Accompanying drawing explanation
Fig. 1 is of the present invention with MoO
3/ Ag is each layer of position relationship schematic diagram of organic solar batteries of anode;
Fig. 2 is of the present invention with MoO
3/ Ag is the organic solar batteries growth flow chart of anode.
Embodiment
Embodiment 1:
As shown in Figure 1, a kind of based on MoO
3the organic solar batteries of/Ag anode, it is that thickness is the glass substrate of 1mm from bottom to top successively, the MoO that thickness is 2nm
3intermediate layer and thickness are the Ag layer (being the anode of battery) of 9nm, the MoO that thickness is 10nm
3hole transmission layer, the effective layer of the P3HT that thickness is 80nm: PCBM, the Al cathode layer that thickness is 100nm.
As shown in Figure 2, performing step of the present invention is as follows:
Step 1, cleans substrate.
Glass is put into detergent, deionized water, acetone and ethanol successively and carry out ultrasonic cleaning, each ultrasonic 15min.
Step 2, prepares the MoO that thickness is 2nm
3intermediate layer.
Above-mentioned glass is dried up by nitrogen gun, put into the metallic room of integrated multi-source multicell coating system, with the mode MoO that evaporation thickness is 2nm in described glass substrate of thermal evaporation
3intermediate layer, the vacuum degree of metallic room is 5 * 10
-4pa.
Step 3, preparing thickness is the Ag layer of 9nm.
By the mode of thermal evaporation at described MoO
3the Ag layer that on intermediate layer, evaporation thickness is 9nm, the vacuum degree of metallic room is 5 * 10
-4pa.
Step 4, prepares the MoO that thickness is 10nm
3hole transmission layer.
The mode MoO that evaporation thickness is 10nm on described Ag layer with thermal evaporation
3hole transmission layer, the vacuum degree of metallic room is 5 * 10
-4pa
Step 5, configuration P3HT: PCBM mixed liquor.
P3HT and PCBM are dissolved in respectively and in 1,2-chlorobenzene, form the solution that concentration is 18mg/ml, then within 1: 0.8 by volume, be configured to mixed liquor.
Step 6, prepares the effective layer of the P3HT that thickness is 80nm: PCBM.
Sample is moved on the whirl coating platform in glove box, by the above-mentioned P3HT of whirl coating spin coating: the mode of PCBM mixed liquor is at described MoO
3on hole transmission layer, obtain the effective layer of the P3HT that thickness is 80nm: PCBM, the rotating speed of whirl coating platform is 1200rpms, and the time is 60s.
Step 7, preparing thickness is the Al cathode layer of 100nm.
Sample is moved to from glove box in the metallic room of integrated multi-source multicell coating system, the mode of deposited by electron beam evaporation is at described P3HT: the PCBM A1 cathode layer that effectively the upper evaporation thickness of layer is 100nm, and the vacuum degree of metallic room is 5 * 10
-4pa.
Step 8, carries out annealing in process to sample.
Sample is moved to glove box (nitrogen atmosphere) from metallic room, carry out annealing operation.Annealing temperature is 140 ℃, and the time is 10min.
Embodiment 2:
As shown in Figure 1, a kind of based on MoO
3the organic solar batteries of/Ag anode, it is that thickness is the glass substrate of 1mm from bottom to top successively, the MoO that thickness is 10nm
3intermediate layer and thickness are the Ag layer (being the anode of battery) of 9nm, the MoO that thickness is 10nm
3hole transmission layer, the effective layer of the P3HT that thickness is 100nm: PCBM, the Al cathode layer that thickness is 100nm.
As shown in Figure 2, performing step of the present invention is as follows:
Step 1, cleans substrate.
Glass is put into detergent, deionized water, acetone and ethanol successively and carry out ultrasonic cleaning, each ultrasonic 15min.
Step 2, prepares the MoO that thickness is 10nm
3intermediate layer.
Above-mentioned glass is dried up by nitrogen gun, put into the metallic room of integrated multi-source multicell coating system, with the mode MoO that evaporation thickness is 10nm in described glass substrate of thermal evaporation
3intermediate layer, the vacuum degree of metallic room is 5 * 10
-4pa.
Step 3, preparing thickness is the Ag layer of 9nm.
By the mode of thermal evaporation at described MoO
3the Ag layer that on intermediate layer, evaporation thickness is 9nm, the vacuum degree of metallic room is 5 * 10
-4pa.
Step 4, prepares the MoO that thickness is 10nm
3hole transmission layer.
The mode MoO that evaporation thickness is 10nm on described Ag layer with thermal evaporation
3hole transmission layer, the vacuum degree of metallic room is 5 * 10
-4pa
Step 5, configuration P3HT: PCBM mixed liquor.
P3HT and PCBM are dissolved in respectively and in 1,2-chlorobenzene, form the solution that concentration is 18mg/ml, then within 1: 0.8 by volume, be configured to mixed liquor.
Step 6, prepares the effective layer of the P3HT that thickness is 100nm: PCBM.
Sample is moved on the whirl coating platform in glove box, by the above-mentioned P3HT of whirl coating spin coating: the mode of PCBM mixed liquor is at described MoO
3on hole transmission layer, obtain the effective layer of the P3HT that thickness is 100nm: PCBM, the rotating speed of whirl coating platform is 1200rpms, and the time is 60s.
Step 7, preparing thickness is the Al cathode layer of 100nT.
Sample is moved to from glove box in the metallic room of integrated multi-source multicell coating system, the mode of deposited by electron beam evaporation is at described P3HT: the PCBM Al cathode layer that effectively the upper evaporation thickness of layer is 100nm, and the vacuum degree of metallic room is 5 * 10
-4pa.
Step 8, carries out annealing in process to sample.
Sample is moved to glove box (nitrogen atmosphere) from metallic room, carry out annealing operation.Annealing temperature is 150 ℃, and the time is 15min.
Embodiment 3:
As shown in Figure 1, a kind of based on MoO
3the organic solar batteries of/Ag anode, it is that thickness is the glass substrate of 1mm from bottom to top successively, the MoO that thickness is 5nm
3intermediate layer and thickness are the Ag layer (being the anode of battery) of 11nm, the MoO that thickness is 10nm
3hole transmission layer, the effective layer of the P3HT that thickness is 80nm: PCBM, the Al cathode layer that thickness is 100nm.
As shown in Figure 2, performing step of the present invention is as follows:
Step 1, cleans substrate.
Glass is put into detergent, deionized water, acetone and ethanol successively and carry out ultrasonic cleaning, each ultrasonic 15min.
Step 2, prepares the MoO that thickness is 5nm
3intermediate layer.
Above-mentioned glass is dried up by nitrogen gun, put into the metallic room of integrated multi-source multicell coating system, with the mode MoO that evaporation thickness is 5nm in described glass substrate of thermal evaporation
3intermediate layer, the vacuum degree of metallic room is 5 * 10
-4pa.
Step 3, preparing thickness is the Ag layer of 11nm.
By the mode of thermal evaporation at described MoO
3the Ag layer that on intermediate layer, evaporation thickness is 11nm, the vacuum degree of metallic room is 5 * 10
-4pa.
Step 4, prepares the MoO that thickness is 10nm
3hole transmission layer.
The mode MoO that evaporation thickness is 10nm on described Ag layer with thermal evaporation
3hole transmission layer, the vacuum degree of metallic room is 5 * 10
-4pa
Step 5, configuration P3HT: PCBM mixed liquor.
P3HT and PCBM are dissolved in respectively and in 1,2-chlorobenzene, form the solution that concentration is 18mg/ml, then within 1: 0.8 by volume, be configured to mixed liquor.
Step 6, prepares the effective layer of the P3HT that thickness is 80nm: PCBM.
Sample is moved on the whirl coating platform in glove box, by the above-mentioned P3HT of whirl coating spin coating: the mode of PCBM mixed liquor is at described MoO
3on hole transmission layer, obtain the effective layer of the P3HT that thickness is 80nm: PCBM, the rotating speed of whirl coating platform is 1200rpms, and the time is 60s.
Step 7, preparing thickness is the Al cathode layer of 100nm.
Sample is moved to from glove box in the metallic room of integrated multi-source multicell coating system, the mode of deposited by electron beam evaporation is at described P3HT: the PCBM A1 cathode layer that effectively the upper evaporation thickness of layer is 100nm, and the vacuum degree of metallic room is 5 * 10
-4pa.
Step 8, carries out annealing in process to sample.
Sample is moved to glove box (nitrogen atmosphere) from metallic room, carry out annealing operation.Annealing temperature is 150 ℃, and the time is 10min.
For those skilled in the art; after understanding content of the present invention and principle; can be in the situation that not deviating from the principle and scope of the present invention; the method according to this invention is carried out various corrections and the change in form and details, but these are based on correction of the present invention with change still within claim protection range of the present invention.
Claims (2)
1. one kind based on MoO
3the organic solar batteries of/Ag anode, is characterized in that: comprise successively that thickness is the glass substrate of 1mm from bottom to top, the MoO that thickness is 2-10nm
3intermediate layer and thickness are the Ag layer of 7-13nm, the MoO that thickness is 10nm
3hole transmission layer, the effective layer of the P3HT that thickness is 80-100nm: PCBM, the Al cathode layer that thickness is 100nm.
2. according to claim 1 a kind of based on MoO
3the preparation method of the organic solar batteries of/Ag anode, is characterized in that: comprise the steps:
(1) glass substrate is cleaned;
(2) sample is put into the metallic room of integrated multi-source multicell coating system, with the mode MoO that evaporation thickness is 2-10nm in described glass substrate of thermal evaporation
3intermediate layer, the vacuum degree of metallic room is 5 * 10
-4pa;
(3) use the mode of thermal evaporation at described MoO
3the Ag layer that on intermediate layer, evaporation thickness is 7-13nm, the vacuum degree of metallic room is 5 * 10
-4pa;
(4) with the mode MoO that evaporation thickness is 10nm on described Ag layer of thermal evaporation
3hole transmission layer, the vacuum degree of metallic room is 5 * 10
-4pa;
(5) derivative (PCBM) of the polymer of 3-hexyl thiophene (P3HT) and fullerene is dissolved in respectively and in 1,2-chlorobenzene, forms the solution that concentration is 18mg/ml, then within 1: 0.8 by volume, be configured to mixed liquor;
(6) sample is moved on the whirl coating platform in glove box, by the above-mentioned P3HT of whirl coating spin coating: the mode of PCBM mixed liquor is at described MoO
3on hole transmission layer, obtain the effective layer of the P3HT that thickness is 80-100nm: PCBM, the rotating speed of whirl coating platform is 1200rpms, and the time is 60s;
(7) sample is retracted from glove box in the metallic room of integrated multi-source multicell coating system, the mode of deposited by electron beam evaporation is at described P3HT: the PCBM Al cathode layer that effectively the upper evaporation thickness of layer is 100nm, and the vacuum degree of metallic room is 5 * 10
-4pa;
(8) sample is moved to glove box (nitrogen atmosphere) from metallic room, carry out annealing operation.Annealing temperature is 140-150 ℃, and the time is 10-15min.
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|---|---|---|---|
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|---|---|---|---|
| CN201310729340.3A CN103715356B (en) | 2013-12-20 | 2013-12-20 | A kind of organic solar cell based on MoO3/Ag anode and its preparation method |
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| CN103715356B CN103715356B (en) | 2017-01-04 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051625A (en) * | 2014-06-13 | 2014-09-17 | 西安电子科技大学 | A kind of polymer solar cell based on AZO/ZnO cathode and preparation method thereof |
| CN111129311A (en) * | 2019-12-23 | 2020-05-08 | 太原理工大学 | Flexible organic photomultiplier detector based on ultrathin silver film anode and fabrication method |
| US10930809B2 (en) | 2016-06-04 | 2021-02-23 | International Business Machines Corporation | Photovoltaic devices with increased efficiency and methods for making the same |
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| CN103227287A (en) * | 2013-04-23 | 2013-07-31 | 吉林大学 | Three-terminal parallel polymer solar cell based on metal nanoparticle doping and preparation method of solar cell |
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| CN103227287A (en) * | 2013-04-23 | 2013-07-31 | 吉林大学 | Three-terminal parallel polymer solar cell based on metal nanoparticle doping and preparation method of solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051625A (en) * | 2014-06-13 | 2014-09-17 | 西安电子科技大学 | A kind of polymer solar cell based on AZO/ZnO cathode and preparation method thereof |
| US10930809B2 (en) | 2016-06-04 | 2021-02-23 | International Business Machines Corporation | Photovoltaic devices with increased efficiency and methods for making the same |
| CN111129311A (en) * | 2019-12-23 | 2020-05-08 | 太原理工大学 | Flexible organic photomultiplier detector based on ultrathin silver film anode and fabrication method |
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| CN103715356B (en) | 2017-01-04 |
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