CN103715069B - A kind of reduce the method for defect in silicon carbide epitaxial film - Google Patents
A kind of reduce the method for defect in silicon carbide epitaxial film Download PDFInfo
- Publication number
- CN103715069B CN103715069B CN201310627032.XA CN201310627032A CN103715069B CN 103715069 B CN103715069 B CN 103715069B CN 201310627032 A CN201310627032 A CN 201310627032A CN 103715069 B CN103715069 B CN 103715069B
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- epitaxial
- growth
- silicon
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 65
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 230000007547 defect Effects 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000010792 warming Methods 0.000 claims abstract description 11
- 238000011065 in-situ storage Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 230000006698 induction Effects 0.000 claims abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 17
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 239000001294 propane Substances 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 abstract description 11
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 34
- 239000010409 thin film Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001657 homoepitaxy Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention is a kind of to reduce the method for defect in silicon carbide epitaxial film, is to carry out, including 1 in horizontal hotwall formula chemical vapor deposition (CVD) equipment) substrate prepares: choose the 0001 silicon face silicon carbide substrates in 4 ° of deflection<11 20>direction；2) baking before growth: after reative cell delivered to by ready sample, before being passed through gas, uses radio frequency induction reacting by heating room；3) etch in situ: use the hydrogen H of improvement2Substrate is carried out growing front surface pretreatment by lithographic technique in situ；4) epitaxial growth: start growing silicon carbide film when temperature is warming up to epitaxial growth temperature.Advantage: use this method can effectively reduce in (0001) silicon face silicon carbide substrates based on 4 ° of<11 20>direction of deflection defect present in epitaxial film, improve the quality of epitaxial film.The inventive method is simple, and epitaxy technique repeatability and concordance are good, and epitaxial film quality is high, are suitable for large-scale production.
Description
Technical field
The present invention relates to the method for defect in the homoepitaxy thin film of a kind of minimizing (0001) silicon face silicon carbide substrates based on 4 ° of<11-20>direction of deflection.Belong to technical field of semiconductor.
Background technology
In recent years, carborundum (SiC) epitaxial material and device increased the most steadily and quickly, and in some field, it the most progressively substitutes traditional silicon and GaAs material.For silicon and GaAs, carborundum has more preferable material behavior.Such as 4H-SiC, it has about 4 × 106The disruptive field intensity of V/cm, about 2 × 107The electron drift velocity of cm/s and the thermal conductivity of about 4.9W/cm K, have high chemical stability and radiation resistance simultaneously.The material behavior of these excellences shows that carborundum is particularly suitable for high power, high temperature and frequency applications.
Most devices preparation all realizes on epitaxial film, and therefore, the performance of silicon carbide device is heavily dependent on the quality of silicon carbide epitaxial film.In order to obtain the high-quality epitaxial film prepared needed for silicon carbide device, epitaxial growth is commonly to carry out in the silicon carbide substrates with certain drift angle, so can realize step well and control epitaxial growth, obtain higher-quality silicon carbide epitaxial film.While it is true, carborundum films is still inevitably present various types of defect, the device performance that restriction is made by these defects on the thin film.Therefore, substantial amounts of research concentrates on the defect how reduced in carborundum films.
At present, people reduce cost and the base plane dislocation (BPDs) reduced in epitaxial film to save material, mainly use the silicon carbide substrates in 4 ° of deflection<11-20>direction to carry out extension.And due to the very difficult low background doped concentration of extension in the silicon carbide substrates of carbon face, epi-taxial silicon carbide silicon thin film generally uses silicon face silicon carbide substrates.Therefore, epi-taxial silicon carbide silicon thin film is typically carried out in (0001) the silicon face silicon carbide substrates in 4 ° of<11-20>direction of deflection.But, it is grown in the epitaxial film on 4 ° of drift angle substrates there is the defects such as a large amount of step-like pattern, triangle defect, is unfavorable for that late device makes.Although having some about the report of defect in epitaxial film in (0001) the silicon face silicon carbide substrates in 4 ° of<11-20>direction of minimizing deflection, as used low C/Si ratio and hydrogen etching online etc., but the effect eliminating defect is unsatisfactory, as depicted in figs. 1 and 2, epitaxial film yet suffers from the defects such as a large amount of step-like patterns.Therefore, need further to reduce defect to improve the quality of epitaxial film, this method uses the online etching technics of hydrogen of improvement while adding baking process before epitaxial growth, effectively reduce the defect in epitaxial film, particularly surface step defect is completely eliminated, and epitaxy defect density reduces to 1cm-2。
Summary of the invention
What the present invention proposed is the method for defect in a kind of minimizing homoepitaxy thin film based on (0001) the silicon face silicon carbide substrates being partial to 4 ° of<11-20>direction, its purpose aims to the defect problem existed after epi-taxial silicon carbide silicon thin film in (0001) the silicon face silicon carbide substrates in 4 ° of<11-20>direction of deflection, it is provided that a kind of simple epitaxy method of technique based on horizontal hotwall formula CVD equipment.This technique can effectively reduce in (0001) the silicon face silicon carbide substrates in 4 ° of<11-20>direction of deflection present in epitaxial film the defects such as step appearance, improves the quality of epitaxial film.
The technical solution of the present invention: a kind of minimizing is the epitaxial growth method of defect in the carborundum films of the 0001 silicon face silicon carbide substrates Epitaxial growth in 4 ° of<11-20>direction of deflection, comprises the technical steps that:
1) substrate prepares: choose the 0001 silicon face silicon carbide substrates in 4 ° of deflection<11-20>direction, and it is stand-by that it is carried out standard cleaning；
2) baking before growth: after reative cell delivered to by ready sample, before being passed through gas, uses radio frequency induction reacting by heating room, and radio-frequency power is 5～6KW, and the process time is 10～20 min, is warming up to 150～250 DEG C；
3) etch in situ: use hydrogen (H2) in situ etching carry out substrate growing front surface pretreatment, H2Flow be 60～90L/min, chamber pressure is 80～150mbar, is warming up on epitaxial growth temperature 10～20 DEG C, and constant temperature 5～15 min is cooled to epitaxial growth temperature, and temperature fall time is 10 min；
4) epitaxial growth: start growing silicon carbide film when greenhouse cooling to epitaxial growth temperature, growth source is silane SiH4With propane C3H8, growth temperature is 1550～1580 DEG C, and growth pressure is 80～150mbar, nitrogen N2With trimethyl aluminium TMA respectively as N-type and P-type dopant.
The present invention has the advantage that the method at (0001) silicon face silicon carbide substrates Epitaxial growth being partial to 4 ° of<11-20>direction that the present invention provides compared with usual epitaxy technology, as shown in Figure 4 and Figure 5, the defect in (0001) silicon face silicon carbide substrates epitaxial film based on 4 ° of<11-20>direction of deflection can be efficiently reduced, particularly surface step defect is completely eliminated, and epitaxy defect density reduces to 1cm-2.Having method simple, epitaxy technique repeatability and concordance are good, and epitaxial film quality is high, are suitable for the features such as large-scale production.
Accompanying drawing explanation
Fig. 1 is the defect distribution schematic diagram of the epitaxial film of (0001) the silicon face silicon carbide substrates based on 4 ° of<11-20>direction of deflection using usual method to prepare.
Fig. 2 is the atomic force microscope images schematic diagram of the epitaxial film of (0001) the silicon face silicon carbide substrates based on 4 ° of<11-20>direction of deflection using usual method to prepare.
Fig. 3 is epitaxial process figure of the present invention.
Fig. 4 is the defect distribution schematic diagram of the epitaxial film of (0001) silicon face silicon carbide substrates based on 4 ° of<11-20>direction of deflection prepared by the present invention.
Fig. 5 is the atomic force microscope images schematic diagram of the epitaxial film of (0001) silicon face silicon carbide substrates based on 4 ° of<11-20>direction of deflection prepared by the present invention.
Detailed description of the invention
A kind of minimizing is the epitaxial growth method of defect in the carborundum films of the 0001 silicon face silicon carbide substrates Epitaxial growth in 4 ° of<11-20>direction of deflection, comprises the technical steps that:
1) substrate prepares: choose the 0001 silicon face silicon carbide substrates in 4 ° of deflection<11-20>direction, and it is stand-by that it is carried out standard cleaning；
2) baking before growth: after reative cell delivered to by ready sample, before being passed through gas, uses radio frequency induction reacting by heating room, and radio-frequency power is 5～6KW, and the process time is 10～20 min, is warming up to 150～250 DEG C；
3) etch in situ: use hydrogen H2Substrate is carried out growing front surface pretreatment, H by etching in situ2Flow be 60～90L/min, chamber pressure is 80～150mbar, is warming up on epitaxial growth temperature 10～20 DEG C, and constant temperature 5～15 min is cooled to epitaxial growth temperature, and temperature fall time is 10 min；
4) epitaxial growth: start growing silicon carbide film when greenhouse cooling to epitaxial growth temperature, growth source is silane SiH4With propane C3H8, growth temperature is 1550～1580 DEG C, and growth pressure is 80～150mbar, nitrogen N2With trimethyl aluminium TMA respectively as N-type and P-type dopant.
Described silicon face silicon carbide substrates is selected from 4H or 6H crystal formation, and chooses the silicon face silicon carbide substrates in 4 ° of deflection<11-20>direction, including 3～6 inches of N+Conductive carbonized silicon substrate and semi insulating silicon carbide silicon substrate.
Toast before described growth, should carry out before being passed through gas after reative cell delivered to by ready sample.
Toasting before the described growth carrying out reative cell, radio-frequency power is 5～6KW, and the process time is 10～20min, reacting by heating room to 150～250 DEG C.
Described hydrogen H2Etching, H in situ2Flow be 60～90L/min, chamber pressure is 80～150mbar, on temperature ramp to epitaxial growth temperature 10～20 DEG C, and constant temperature 5～15min, 10min is cooled to epitaxial growth temperature subsequently.
Described epitaxial silicon carbide uses silane SiH4With propane C3H8As growth source, nitrogen N2With trimethyl aluminium TMA respectively as N-type and P-type dopant.
Described epitaxial silicon carbide growth source flow and doping flow and epitaxial growth time set according to epitaxial layer structure.
3 further detailed descriptions originally go out the most preferred embodiment of invention with reference to the accompanying drawings.
Embodiment
1
1) select to be partial to (0001) silicon face 4H-SiC conductive substrates in 4 ° of<11-20>direction and it carried out standard cleaning stand-by；
2) substrate is placed on the graphite base of heat, sends into reaction chamber body, be evacuated to < 3 × 10-6mbar；
3) after reative cell delivered to by ready sample, before being passed through gas, using radio frequency induction heating to be coated with the graphite reative cell (comprising pedestal) of ramet coating, radio-frequency power is 5KW, and the process time is 15min, is warming up to 200 DEG C；
4) at H2Flow be 75L/min and chamber pressure is under 100mbar atmosphere, be slowly warming up to 1570 DEG C, keep temperature-resistant 10min, be cooled to epitaxial growth temperature 1550 DEG C with 10min, remove damage and the contamination on surface, concurrently facilitate the outer time delay defect of minimizing；
5) temperature stabilization is at 1550 DEG C, and reaction pressure is 100mbar, is passed through growth source silane (SiH4) and propane (C3H8), and flow is respectively 50ml/min and 25ml/min, is passed through the N that adulterant flow is 50ml/min2Grow 30 μm and there is the silicon carbide epitaxial film of n-type doping；
6) growth source and doped source are closed, reative cell cooling, evacuation.
Embodiment 2
1) select to be partial to (0001) silicon face 4H-SiC high-purity semi-insulating substrate in 4 ° of<11-20>direction and it carried out standard cleaning stand-by；
2) substrate is placed on the graphite base of heat, sends into reaction chamber body, be evacuated to < 3 × 10-6mbar；
3) after reative cell delivered to by ready sample, before being passed through gas, using radio frequency induction heating to be coated with the graphite reative cell (comprising pedestal) of ramet coating, radio-frequency power is 6KW, and the process time is 20min, is warming up to 240 DEG C；
4) at H2Flow be 75L/min and chamber pressure is under 100mbar atmosphere, be slowly warming up to 1590 DEG C, keep temperature-resistant 5min, be cooled to epitaxial growth temperature 1580 DEG C with 10min, remove damage and the contamination on surface, concurrently facilitate the outer time delay defect of minimizing；
5) temperature stabilization is at 1580 DEG C, and reaction pressure is 100mbar, is passed through growth source silane (SiH4) and propane (C3H8), and flow is respectively 20ml/min and 10ml/min, and being passed through adulterant flow is 1.25 × 10-3The trimethyl aluminium (TMA) of ml/min grows 0.5 μm and has the silicon carbide epitaxial film of p-type doping；
6) growth source and doped source are closed, reative cell cooling, evacuation.
The carborundum films obtained with the method isoepitaxial growth still falls within silicon face, and optical microphotograph Microscopic observation understands, this silicon face epitaxial film surface smooth.The sample obtaining the embodiment of the present invention carries out test analysis.Fig. 4 is the defect distribution of the epitaxial film of (0001) silicon face silicon carbide substrates based on 4 ° of<11-20>direction of deflection prepared by the present invention, and surface step defect is completely eliminated, and epitaxy defect density reduces to 1cm-2, epitaxial film defect concentration value 10cm prepared much smaller than usual epitaxy technology-2.Fig. 5 is atomic force microscope (AFM) surface topography map of the silicon carbide epitaxy film of the present invention.Scan area is 10 μ m 10 μm, and surface is only 0.231nm without the defects such as step appearance, surface roughness root-mean-square (RMS).The above results shows that the present invention can efficiently reduce the defect in (0001) silicon face silicon carbide substrates epitaxial film based on 4 ° of<11-20>direction of deflection, and particularly surface step defect is completely eliminated, and epitaxy defect density reduces to 1cm-2, it is thus achieved that high-quality epitaxial film.And the present invention is simple, the epitaxy technique repeatability related to and concordance are good, are suitable for large-scale production.
Above example of making is the general embodiment of the present invention, and in manufacture method, actual adoptable production program is a lot, equalization change and the decoration that all claim under this invention is done, and belongs to the covering scope of the present invention.
Claims (1)
1. one kind is reduced the epitaxial growth method of defect in the carborundum films of the 0001 silicon face silicon carbide substrates Epitaxial growth in 4 ° of<11-20>direction of deflection, horizontal hotwall formula chemical vapor deposition (CVD) equipment is carried out, it is characterized in that the method comprises the technical steps that:
1) substrate prepares: choose the 0001 silicon face silicon carbide substrates in 4 ° of deflection<11-20>direction, and it is stand-by that it is carried out standard cleaning；
2) baking before growth: after reative cell delivered to by ready sample, before being passed through gas, uses radio frequency induction reacting by heating room, and radio-frequency power is 5～6KW, and the process time is 10～20 min, is warming up to 150～250 DEG C；
3) etch in situ: use hydrogen H2Substrate is carried out growing front surface pretreatment, H by etching in situ2Flow be 60～90L/min, chamber pressure is 80～150mbar, is warming up on epitaxial growth temperature 10～20 DEG C, and constant temperature 5～15 min is cooled to epitaxial growth temperature, and temperature fall time is 10 min；
4) epitaxial growth: start growing silicon carbide film when greenhouse cooling to epitaxial growth temperature, growth source is silane SiH4With propane C3H8, growth temperature is 1550～1580 DEG C, and growth pressure is 80～150mbar, nitrogen N2With trimethyl aluminium TMA respectively as N-type and P-type dopant；
Described silicon face silicon carbide substrates is selected from 4H or 6H crystal formation, and chooses the silicon face silicon carbide substrates in 4 ° of deflection<11-20>direction, including 3～6 inches of N+Conductive carbonized silicon substrate and semi insulating silicon carbide silicon substrate；
Described epitaxial silicon carbide growth source flow and doping flow and epitaxial growth time set according to epitaxial layer structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310627032.XA CN103715069B (en) | 2013-12-02 | 2013-12-02 | A kind of reduce the method for defect in silicon carbide epitaxial film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310627032.XA CN103715069B (en) | 2013-12-02 | 2013-12-02 | A kind of reduce the method for defect in silicon carbide epitaxial film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103715069A CN103715069A (en) | 2014-04-09 |
| CN103715069B true CN103715069B (en) | 2016-09-21 |
Family
ID=50407947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310627032.XA Active CN103715069B (en) | 2013-12-02 | 2013-12-02 | A kind of reduce the method for defect in silicon carbide epitaxial film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103715069B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104018217A (en) * | 2014-06-12 | 2014-09-03 | 西安电子科技大学 | 4H-SiC homoepitaxial growth method |
| CN104018216A (en) * | 2014-06-12 | 2014-09-03 | 西安电子科技大学 | 4H-SiC homoepitaxial growth system |
| CN104233465A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Preparation method for controlling epitaxial growth of heavily doped pressure N-type silicon carbide film |
| CN104233461A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Method for preparing N-type heavily-doped silicon carbide thin film epitaxy by controlling hydrogen flow |
| CN104911713A (en) * | 2015-03-16 | 2015-09-16 | 中国电子科技集团公司第五十五研究所 | Method of improving quality of aluminum nitride crystal by using hydrogen in-situ etching |
| CN105826186B (en) * | 2015-11-12 | 2018-07-10 | 中国电子科技集团公司第五十五研究所 | The growing method of great surface quality silicon carbide epitaxial layers |
| CN105869996A (en) * | 2016-04-25 | 2016-08-17 | 全球能源互联网研究院 | Silicon carbide epitaxial growth system and growth method thereof |
| JP6762484B2 (en) * | 2017-01-10 | 2020-09-30 | 昭和電工株式会社 | SiC epitaxial wafer and its manufacturing method |
| CN108166056A (en) * | 2018-01-16 | 2018-06-15 | 李哲洋 | A kind of growing method that can effectively reduce silicon carbide epitaxy surface defect |
| CN110117814A (en) * | 2018-02-05 | 2019-08-13 | 西安电子科技大学 | The preparation method of silicon carbide epitaxy with low-density C vacancy defect |
| CN109797374A (en) * | 2019-01-15 | 2019-05-24 | 芜湖启迪半导体有限公司 | A kind of preparation method and its batch preparation of silicon carbide substrates |
| CN114384051A (en) * | 2021-12-17 | 2022-04-22 | 山东大学 | Method for distinguishing defects in silicon carbide wafer on carbon surface of wafer |
| CN114093765B (en) * | 2022-01-18 | 2023-02-28 | 浙江大学杭州国际科创中心 | Method for prolonging minority carrier lifetime of silicon carbide film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101506960A (en) * | 2006-08-23 | 2009-08-12 | 应用材料股份有限公司 | Overall defect reduction for PECVD films |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002255692A (en) * | 2001-03-02 | 2002-09-11 | Nippon Steel Corp | Silicon carbide epitaxial substrate and method of manufacturing the same |
| JP5125095B2 (en) * | 2006-12-22 | 2013-01-23 | パナソニック株式会社 | Manufacturing method of substrate with SiC epitaxial film and manufacturing apparatus of substrate with SiC epitaxial film |
| EP2395133B1 (en) * | 2009-01-30 | 2020-03-04 | Showa Denko K.K. | Method for producing epitaxial silicon carbide single crystal substrate |
| CN102859654B (en) * | 2010-05-10 | 2016-01-13 | 三菱电机株式会社 | Silicon carbide epitaxy wafer and manufacture method thereof, epitaxial growth silicon carbide bulk substrate and manufacture method thereof |
| CN102569055B (en) * | 2010-12-14 | 2014-05-21 | 北京天科合达蓝光半导体有限公司 | A method for adjusting the surface and flatness of a silicon carbide single crystal wafer |
-
2013
- 2013-12-02 CN CN201310627032.XA patent/CN103715069B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101506960A (en) * | 2006-08-23 | 2009-08-12 | 应用材料股份有限公司 | Overall defect reduction for PECVD films |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103715069A (en) | 2014-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103715069B (en) | A kind of reduce the method for defect in silicon carbide epitaxial film | |
| US10907273B2 (en) | Growing epitaxial 3C-SiC on single-crystal silicon | |
| CN111029246B (en) | Method for reducing triangular defects in SiC epitaxial layer | |
| CN103820849B (en) | A kind of technique of the production 12 cun of silicon single crystal epitaxial wafers that reduce pressure | |
| CN103228827A (en) | Method for producing epitaxial silicon carbide single crystal substrate | |
| CN104718601A (en) | SiC substrate with SiC epitaxial film | |
| CN106711022B (en) | A kind of preparation method of growth doped interface clearly silicon carbide epitaxial film | |
| CN105140102B (en) | A kind of method of the beta-silicon carbide thin film of epitaxial growth on a silicon substrate of optimization | |
| CN106803479B (en) | A kind of preparation method for the silicon carbide epitaxial wafer improving effective area | |
| CN105441902B (en) | A kind of preparation method of epitaxial silicon carbide graphene composite film | |
| WO2023016158A1 (en) | Sic step flow rapid growth method based on growth monomer chemical potential regulation under non-equilibrium condition | |
| CN104561926B (en) | A kind of method for preparing beta -sic film on a silicon substrate | |
| CN104867818B (en) | A kind of method for reducing silicon carbide epitaxy material defect | |
| CN105244255A (en) | Silicon carbide epitaxial material and production method thereof | |
| CN104779141A (en) | Preparation method of low-deflection angle silicon carbide homogeneous epitaxial material | |
| JP3508519B2 (en) | Epitaxial growth apparatus and epitaxial growth method | |
| CN114032616A (en) | SiC step flow low-speed growth method for chemical potential regulation growth monomer under non-equilibrium condition | |
| JP2014232799A (en) | Method of manufacturing silicon carbide semiconductor substrate | |
| CN116259534A (en) | Silicon carbide epitaxy method | |
| CN106653582B (en) | The method for improving silicon carbide epitaxy compatibility | |
| CN105671631B (en) | Method for cleaning back surface of 200mm-300mm epitaxial equipment base in situ | |
| CN110117816A (en) | The method that low pressure prepares carborundum films extension | |
| WO2011145279A1 (en) | Silicon epitaxial wafer and method for producing same | |
| CN105369217A (en) | Method for preparing base-region graded doped silicon carbide thin film epitaxy layer | |
| KR102401334B1 (en) | A method for bandgap engineering of diamond by hybridization with graphene |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |