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CN103714860B - Fast dynamic register, register method, integrated circuit - Google Patents

Fast dynamic register, register method, integrated circuit Download PDF

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CN103714860B
CN103714860B CN201410003842.2A CN201410003842A CN103714860B CN 103714860 B CN103714860 B CN 103714860B CN 201410003842 A CN201410003842 A CN 201410003842A CN 103714860 B CN103714860 B CN 103714860B
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CN103714860A (en
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伊慕兰·库瑞希
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Via Technologies Inc
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Abstract

A fast dynamic register includes a data block, a precharge circuit, a transparent latch, and an output logic gate. The precharge circuit precharges the first and second precharge nodes in response to a clock and then releases the first precharge node. The data block evaluates the data by pulling the first pre-charge node low or by not pulling it low in response to the clock, in which case the second pre-charge node is discharged. The transparent latch passes the state of the second pre-charge node to the storage node when the transparent latch is transparent, otherwise the storage node is latched. The output logic gate drives the output node to a state dependent on the states of the second precharge node and the storage node. The transparent latch may be implemented with relatively small devices to reduce size and power consumption and thereby increase efficiency.

Description

快速动态寄存器、寄存方法、集成电路Fast dynamic register, register method, integrated circuit

有关申请的交叉引用Cross References to Applications

本申请主张以下的美国临时专利申请的优先权,为了所有的意图和目的,通过全文引用将其合并于此。This application claims priority to the following United States Provisional Patent Application, which is hereby incorporated by reference in its entirety for all intents and purposes.

本申请涉及以下的共同在审(co-pending)美国专利申请,其每一个具有共同的委托人和共同的发明人。This application is related to the following co-pending US patent applications, each having a common assignee and a common inventor.

技术领域technical field

本发明涉及锁存器和寄存器电路,并且更具体地说,涉及带有用于提高效率的透明锁存器的快速动态寄存器及其寄存方法、可扫描快速动态寄存器、包含快速动态寄存器或可扫描快速动态寄存器的集成电路。The present invention relates to latch and register circuits, and more particularly, to fast dynamic registers with transparent latches for improved efficiency and methods of registering them, scannable fast dynamic registers, fast dynamic registers containing fast dynamic registers or scannable fast Integrated circuit with dynamic registers.

背景技术Background technique

动态逻辑电路经常呈现相对较长的建立和/或保持时间以确保适当操作。人们希望在没有脉冲时钟电路开销的情况下,利用最小建立时间来提高快速动态寄存器电路的效率。对于具有最小建立时间而没有脉冲时钟电路开销的快速动态寄存器电路,期望其具有扫描能力。Dynamic logic circuits often exhibit relatively long setup and/or hold times to ensure proper operation. It is desirable to increase the efficiency of fast dynamic register circuits with minimal settling time without the overhead of pulsed clock circuits. Scan capability is desirable for fast dynamic register circuits with minimal settling time and no pulse clock circuit overhead.

发明内容Contents of the invention

根据一个实施例的快速动态寄存器包含数据块、预充电电路、透明锁存器以及输出逻辑门。所述数据块被耦接在第一预充电节点和放电节点之间,接收至少一个数据输入,以及当时钟节点从第一时钟状态转换到第二时钟状态时,通过将第一预充电节点拉到放电节点进行评估。当时钟节点处于第一时钟状态时,预充电电路预充电第一和第二预充电节点,当所述时钟节点转换到第二时钟状态时,预充电电路释放第一预充电节点并且将放电节点拉到低电位,以及在所述时钟节点转换到第二时钟状态后,当第一预充电节点保持高电位时,预充电电路将第二预充电节点放电为低电位。所述透明锁存器具有被耦接到第二预充电节点的锁存器输入端和被耦接到存储节点的输出端。当所述时钟节点处于第二时钟状态时,透明锁存器对于将第二预充电节点的状态传递到存储节点是透明的,并且当所述时钟节点处于第一时钟状态时,锁存所述存储节点。输出逻辑门基于所述第二预充电节点和存储节点的状态驱动输出节点到一状态。A fast dynamic register according to one embodiment includes a data block, a precharge circuit, a transparent latch, and an output logic gate. The data block is coupled between a first precharge node and a discharge node, receives at least one data input, and when the clock node transitions from a first clock state to a second clock state, by pulling the first precharge node to to the discharge node for evaluation. When the clock node is in the first clock state, the precharge circuit precharges the first and second precharge nodes, and when the clock node transitions to the second clock state, the precharge circuit releases the first precharge node and discharges the node pulled low, and after the clock node transitions to the second clock state, the precharge circuit discharges the second precharge node to low while the first precharge node remains high. The transparent latch has a latch input coupled to the second precharge node and an output coupled to the storage node. The transparent latch is transparent to passing the state of the second precharge node to the storage node when the clock node is in the second clock state, and latches the Storage nodes. An output logic gate drives an output node to a state based on the states of the second precharge node and the storage node.

透明锁存器可以包括第一和第二晶体管、以及保持器(keeper)电路。所述每一个晶体管具有被耦接在锁存器输入端和锁存器输出端之间的一对电流端子,其中第一晶体管具有被耦接到时钟节点的控制输入端,并且其中第二晶体管具有被耦接到反相时钟节点的控制输入端。所述保持器电路被耦接到时钟节点、反相时钟节点和锁存器输出,并且当所述时钟节点处于第一时钟状态时,进行操作以维持输出节点的状态。The transparent latch may include first and second transistors, and a keeper circuit. Each of the transistors has a pair of current terminals coupled between the latch input and the latch output, wherein the first transistor has a control input coupled to the clock node, and wherein the second transistor has a control input coupled to an inverting clock node. The keeper circuit is coupled to a clock node, an inverting clock node, and a latch output, and operates to maintain a state of an output node when the clock node is in a first clock state.

快速动态寄存器电路可用扫描模式来实现。在此情形中,所述寄存器电路包含扫描使能块、选择门、以及第二透明锁存器。扫描使能块耦接在第一预充电节点和放电节点之间以接收扫描使能输入,并且当扫描使能输入被设置时、以及当时钟节点从第一时钟状态转换第二时钟状态时,将扫描使能块将第一预充电节点拉到放电节点。所述选择门插入在第二预充电节点和透明锁存器之间,其中所述选择门具有被耦接到第二预充电节点的第一输入端,具有被耦接到扫描数据节点的第二输入端,并且具有被耦接到透明锁存器的锁存输入端的输出端。所述第二透明锁存器具有接收扫描数据输入的输入端和被耦接到扫描数据节点的输出端。当时钟节点处于第一时钟状态时并且当扫描使能输入被设置时,第二透明锁存器对于将扫描数据输入传递到扫描数据节点是透明的,当扫描使能输入被取消设置并且当时钟节点处于第一时钟状态时,第二透明锁存器强迫扫描数据节点位为高电位,并且当时钟节点处于第二时钟状态时,第二透明锁存器保持扫描数据节点的最后状态。Fast dynamic register circuits can be implemented in scan mode. In this case, the register circuit includes a scan enable block, a select gate, and a second transparent latch. a scan enable block coupled between the first precharge node and the discharge node to receive a scan enable input, and when the scan enable input is set and when the clock node transitions from the first clock state to the second clock state, The scan enable block pulls the first precharge node to the discharge node. The select gate is interposed between the second precharge node and the transparent latch, wherein the select gate has a first input coupled to the second precharge node, a first input coupled to the scan data node Two inputs and an output coupled to the latch input of the transparent latch. The second transparent latch has an input receiving a scan data input and an output coupled to a scan data node. The second transparent latch is transparent for passing the scan data input to the scan data node when the clock node is in the first clock state and when the scan enable input is asserted, and when the scan enable input is deasserted and when the clock The second transparent latch forces the scan data node bit high when the node is in the first clock state, and holds the last state of the scan data node when the clock node is in the second clock state.

根据一个实施例的集成电路包含提供至少一个数据输入端和时钟节点的组合逻辑,以及如上所描述的快速动态寄存器。An integrated circuit according to one embodiment comprises combinational logic providing at least one data input and a clock node, and a fast dynamic register as described above.

根据一个实施例的寄存数据的方法包括:当时钟信号处于第一时钟状态时,预充电第一预充电节点为高电位;当所述至少一个数据输入未被预估,且在时钟信号转换到第二时钟状态后,预估至少一个数据输入并且保持第一预充电节点为高电位;以及当时钟信号转换到第二时钟状态且当至少一个数据输入被预估时,将所述第一预充电节点放电为低电位;当时钟信号处于第一时钟状态时,预充电第二预充电节点为高电位;如果第一预充电节点在时钟信号转换到第二逻辑状态后保持高电位,则放电第二预充电节点为低电位,否则保持第二预充电节点为高电位;当时钟信号在第一时钟状态时,锁存存储节点的状态;并且当时钟信号在第二时钟状态时,将第二预充电节点的状态传递到存储节点;并且基于第二预充电和存储节点的状态来设置输出节点。A method of registering data according to an embodiment includes: when the clock signal is in a first clock state, precharging a first precharge node to a high potential; when the at least one data input is not expected, and when the clock signal transitions to After the second clock state, at least one data input is evaluated and the first precharge node is held high; and when the clock signal transitions to the second clock state and when the at least one data input is evaluated, the first precharged node is asserted The charging node is discharged low; when the clock signal is in the first clock state, precharge the second precharge node is high; if the first precharge node remains high after the clock signal transitions to the second logic state, discharge The second precharge node is low potential, otherwise keep the second precharge node high potential; when the clock signal is in the first clock state, latch the state of the storage node; and when the clock signal is in the second clock state, set the second The state of the second precharge node is communicated to the storage node; and the output node is set based on the state of the second precharge and storage node.

所述方法可以包括:反相所述时钟信号并且提供被反相的时钟信号;导通被时钟信号控制的、被耦接在第二预充电节点和存储节点之间的第一传递晶体管;导通被所述反相时钟信号控制的、被耦接在第二预充电节点和存储节点之间的第二传递晶体管;以及当时钟信号处于第一时钟状态时,保持存储节点的状态。所述方法可以进一步包括:当设置扫描使能输入时,接收扫描使能输入值;当时钟信号转换到第二时钟状态时,通过强迫第一预充电节点放电到低电位来旁路数据设置值;以及当设置所述扫描使能输入时,注入扫描数据输入值来取代第二预充电节点的状态,并且当时钟信号处于第二时钟状态时,将扫描数据输入的状态传递到存储节点。The method may include: inverting the clock signal and providing the inverted clock signal; turning on a first pass transistor coupled between the second precharge node and the storage node controlled by the clock signal; turning on passing through a second pass transistor coupled between the second precharge node and the storage node controlled by the inverted clock signal; and maintaining the state of the storage node when the clock signal is in the first clock state. The method may further comprise: receiving a scan enable input value when the scan enable input is set; bypassing the data set value by forcing the first precharge node to discharge to a low potential when the clock signal transitions to the second clock state and when said scan enable input is set, injecting a scan data input value in place of the state of the second precharge node, and passing the state of the scan data input to the storage node when the clock signal is in the second clock state.

根据一个实施例的可扫描快速动态寄存器,包括:数据和扫描使能电路,被耦接在第一预充电节点和放电节点之间,并且接收至少一个数据输入值和扫描使能输入值,其中,当时钟节点从第一时钟状态转换到第二时钟状态时,以及当所述数据块被预估或者当设置所述扫描使能输入时,所述数据和扫描使能电路将所述第一预充电节点值拉到所述放电节点之数值,除此之外,所述数据和扫描使能电路不将所述第一预充电节点拉到所述放电节点;预充电电路,当所述时钟节点处于所述第一时钟状态时,将第二预充电节点和所述第一预充电节点两者都预充到高电位,当所述时钟节点转换到所述第二时钟状态时,释放所述第一预充电节点并且将所述放电节点拉到低电位,并且在所述时钟节点转换到所述第二时钟状态后,且当所述第一预充电节点保持高电位时,将所述第二预充电节点放电到低电位;选择电路,具有被耦接到所述第二预充电节点的第一输入端,具有被耦接到扫描数据节点的第二输入端,并且具有被选择的输出端;存储电路,具有接收所述被选择输出端数值的存储输入端,并且具有被耦接到存储节点的输出端,其中,当所述时钟节点处于所述第二时钟状态时,所述存储电路将所述被选择输出值的状态传递到所述存储节点,并且当所述时钟节点处于所述第一时钟状态时,所述存储电路保持所述存储节点的最后状态;扫描使能电路,当设置所述扫描使能输入并且当所述时钟节点处于所述第一时钟状态时,将扫描输入的状态传递到所述扫描数据节点,当取消设置所述扫描使能信号并且当所述时钟节点处于所述第一时钟状态时,迫使所述扫描数据节点到高电位,并且当所述时钟节点处于所述第二时钟状态时,保持所述扫描数据节点的最后状态;以及输出逻辑门,基于所述第二预充电节点和所述存储节点的状态驱动输出节点到一状态。A scannable fast dynamic register according to one embodiment, comprising: a data and scan enable circuit coupled between a first precharge node and a discharge node, and receiving at least one data input value and a scan enable input value, wherein , when the clock node transitions from the first clock state to the second clock state, and when the data block is estimated or when the scan enable input is set, the data and scan enable circuit sets the first precharge node value pulled to the value of the discharge node, in addition, the data and scan enable circuit does not pull the first precharge node to the discharge node; precharge circuit, when the clock When the node is in the first clock state, precharge both the second precharge node and the first precharge node to a high potential, and when the clock node transitions to the second clock state, release the the first pre-charge node and pull the discharge node low, and after the clock node transitions to the second clock state and while the first pre-charge node remains high, pull the The second pre-charge node is discharged to a low potential; a selection circuit having a first input coupled to the second pre-charge node, having a second input coupled to the scan data node, and having a selected an output; a storage circuit having a storage input receiving a value of the selected output and having an output coupled to a storage node, wherein when the clock node is in the second clock state, the a storage circuit communicates the state of the selected output value to the storage node, and when the clock node is in the first clock state, the storage circuit maintains the last state of the storage node; a scan enable circuit , when the scan enable input is set and when the clock node is in the first clock state, pass the state of the scan input to the scan data node, when the scan enable signal is deasserted and when the forcing the scan data node to a high potential when the clock node is in the first clock state, and maintaining the last state of the scan data node when the clock node is in the second clock state; and outputting a logic gate , driving an output node to a state based on the states of the second precharge node and the storage node.

根据一个实施例的集成电路,包括:时钟节点和扫描使能节点,其中,所述扫描使能节点接收指示扫描模式的扫描使能信号;以及至少一个可扫描快速动态锁存器。每一个可扫描快速动态锁存器包括:数据和扫描使能电路,被耦接在第一预充电节点和放电节点之间,并且接收至少一个数据输入值和具有接收所述扫描使能信号的扫描使能输入值,其中,当所述时钟节点从第一时钟状态转换到第二时钟状态时,以及当所述数据块被评估或者当设置所述扫描使能信号时,所述数据和扫描使能电路将所述第一预充电节点值拉到所述放电节点之数值,除此之外,所述数据和扫描使能电路不将所述第一预充电节点值拉到所述放电节点之数值;预充电电路,当所述时钟节点处于所述第一时钟状态时,将第二预充电节点和所述第一预充电节点两者都预充到高电位,当所述时钟节点转换到所述第二时钟状态时,释放所述第一预充电节点并且将所述放电节点拉到低电位,并且在所述时钟节点转换到所述第二时钟状态后,只有所述第一预充电节点保持高电位时,将所述第二预充电节点放电到低电位;选择电路,具有被耦接到所述第二预充电节点的第一输入端,具有被耦接到扫描数据节点的第二输入端,并且具有被选择的输出端;存储电路,具有接收所述被选择输出值的存储输入端和具有被耦接到存储节点的输出端,其中,当所述时钟节点处于所述第二时钟状态时,所述存储电路将所述被选择输出端的状态传递到所述存储节点,并且当所述时钟节点处于所述第一时钟状态时,所述存储电路保持所述存储节点的最后状态;扫描使能电路,当设置所述扫描使能输入并且当所述时钟节点处于所述第一时钟状态时,将扫描输入的状态传递到所述扫描数据节点,当取消设置所述扫描使能信号并且当所述时钟节点处于所述第一时钟状态时,迫使所述扫描数据节点到高电位,并且当所述时钟节点处于所述第二时钟状态时,保持所述扫描数据节点的最后状态;以及输出逻辑门,基于所述第二预充电节点和所述存储节点的状态驱动输出节点到一状态。An integrated circuit according to an embodiment, comprising: a clock node and a scan enable node, wherein the scan enable node receives a scan enable signal indicating a scan mode; and at least one scannable fast dynamic latch. Each scannable fast dynamic latch includes: a data and scan enable circuit, coupled between the first precharge node and the discharge node, and receiving at least one data input value and having a function of receiving the scan enable signal A scan enable input value, where the data and scan an enable circuit that pulls the first precharge node value to the discharge node value, and in addition the data and scan enable circuits do not pull the first precharge node value to the discharge node The value of the pre-charge circuit, when the clock node is in the first clock state, pre-charge both the second pre-charge node and the first pre-charge node to a high potential, when the clock node transitions When the second clock state is reached, the first precharge node is released and the discharge node is pulled low, and after the clock node transitions to the second clock state, only the first precharge node When the charging node maintains a high potential, the second pre-charge node is discharged to a low potential; the selection circuit has a first input terminal coupled to the second pre-charge node, and has a first input terminal coupled to the scan data node a second input and having a selected output; a storage circuit having a storage input receiving said selected output value and having an output coupled to a storage node, wherein when said clock node is at said In the second clock state, the storage circuit transfers the state of the selected output terminal to the storage node, and when the clock node is in the first clock state, the storage circuit maintains the state of the storage node Last state; scan enable circuit, when the scan enable input is set and when the clock node is in the first clock state, passes the state of the scan input to the scan data node, when the scan is deasserted enable signal and force the scan data node high when the clock node is in the first clock state, and hold the scan data node high when the clock node is in the second clock state a final state; and an output logic gate driving an output node to a state based on states of the second precharge node and the storage node.

附图说明Description of drawings

对于以下的描述和附图,本发明的益处、特征和优点将变得更好理解,其中:The benefits, features and advantages of the present invention will become better understood with reference to the following description and accompanying drawings, in which:

图1是根据一个实施例实现的快速动态寄存器的概略图示;Figure 1 is a schematic diagram of a fast dynamic register implemented according to one embodiment;

图2-5绘示包含一个或更多N沟道晶体管的图1的数据块的不同配置;2-5 illustrate different configurations of the data block of FIG. 1 comprising one or more N-channel transistors;

图6是根据一个实施例的锁存器架构图,其可以用作图1的锁存器;FIG. 6 is an architectural diagram of a latch according to one embodiment, which can be used as the latch of FIG. 1;

图7是根据一个实施例实现的可扫描快速动态寄存器的架构图;FIG. 7 is an architectural diagram of a scannable fast dynamic register realized according to one embodiment;

图8是使用多路器的图7的透明锁存器的单独或者两者的可替换实施例架构图;以及FIG. 8 is an architectural diagram of an alternative embodiment of either or both of the transparent latches of FIG. 7 using multiplexers; and

图9是合并了每一个根据图7的可扫描快速动态寄存器所实现的可扫描快速动态寄存器的集成电路的方框架构图。FIG. 9 is a block diagram of an integrated circuit incorporating each of the scannable fast dynamic registers implemented according to the scannable fast dynamic registers of FIG. 7 .

具体实施方式detailed description

以下所给定之描述系使本领域普通技术人员能够依据说明书所揭露的应用及要求来制作和使用本发明。然而,各种对于实施例之修改对本领域技术人员是显而易见的,并且可以将这里所定义的一般原则应用于其它实施例。因此,本发明不意图受限于这里所示出和描述的特定实施例,任何按照说明书被公开的原则和新特点相一致的最宽范围都应包含在本发明专利范围中。The description given below is to enable those skilled in the art to make and use the present invention according to the applications and requirements disclosed in the specification. However, various modifications to the embodiments will be apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments. Therefore, the present invention is not intended to be limited to the specific embodiments shown and described here, and any broadest scope consistent with the principles disclosed in the specification and novel features should be included in the patent scope of the present invention.

图1是根据一个实施例实现的快速动态寄存器100架构图。一个或更多数据输入提供给输入数据块102的各个输入端并共同被标示为DN,此标记“DN”表示一个或更多数据输入的任意适合整数“N”,其中N是大于0的整数。单个输入数据值(例如,D或D1)也被考虑并包含在实施例中。输入数据块102耦接在预充电(PC1)节点103和放电(DCH)节点101之间。当CK变成高电位时,输入数据块102会根据期望的逻辑功能以评估一个或更多数据输入DN的共同(collective)状态。当CK变成高电位且数据块102“进行评估(evaluates)”时,则它在节点103和101之间创建具有足够低电阻的电流路径以便经由DCH节点有效地朝VSS下拉PC1的电压。如果数据块102没有进行评估,则不提供电流路径或者在节点103和101之间呈现高阻抗路径,以使节点PC1103保持高电位。快速动态寄存器100为快速的至少一个理由是,因为它对于非扫描数据输入具有接近零的建立要求。Fig. 1 is a structural diagram of a fast dynamic register 100 implemented according to an embodiment. One or more data inputs are provided to respective inputs of the input data block 102 and are collectively denoted DN, the designation "DN" representing any suitable integer "N" of one or more data inputs, where N is an integer greater than zero . A single input data value (eg, D or D1 ) is also contemplated and included within the embodiments. The input data block 102 is coupled between a precharge (PC1 ) node 103 and a discharge (DCH) node 101 . When CK goes high, the input data block 102 evaluates the collective state of one or more data inputs DN according to the desired logic function. When CK goes high and data block 102 "evaluates", then it creates a current path between nodes 103 and 101 with low enough resistance to effectively pull down the voltage of PC1 towards VSS via the DCH node. If data block 102 is not being evaluated, no current path is provided or a high impedance path is presented between nodes 103 and 101 so that node PC1103 remains at a high potential. At least one reason the fast dynamic register 100 is fast is because it has near-zero setup requirements for non-scanning data inputs.

N沟道晶体管N1具有:耦接到DCH节点101的漏极;耦接到电源供应节点VSS的源极;以及耦接到接收输入时钟信号CK的时钟节点104的栅极。将时钟节点104耦接到N沟道晶体管N1、N4和N6的栅极,耦接到P沟道器件P1和P2的栅极,耦接到反相器105和123的输入端,以及耦接到锁存器117的非反相时钟输入端“C”。P1和P2具有耦接到电源供应节点VDD的源极。将P1的漏极耦接到PC1节点103,并且将P2的漏极耦接到第二预充电(PC2)节点109。将反相器105的输出耦接到节点107,节点107耦接到N沟道晶体管N2的源极。N2具有耦接到PC1节点103的栅极和耦接到PC2节点109的漏极。N-channel transistor N1 has: a drain coupled to DCH node 101; a source coupled to power supply node VSS; and a gate coupled to clock node 104 receiving an input clock signal CK. Clock node 104 is coupled to the gates of N-channel transistors N1, N4, and N6, to the gates of P-channel devices P1 and P2, to the inputs of inverters 105 and 123, and to To the non-inverting clock input "C" of latch 117. P1 and P2 have sources coupled to power supply node VDD. The drain of P1 is coupled to PC1 node 103 , and the drain of P2 is coupled to a second precharge ( PC2 ) node 109 . The output of inverter 105 is coupled to node 107, which is coupled to the source of N-channel transistor N2. N2 has a gate coupled to PC1 node 103 and a drain coupled to PC2 node 109 .

将PC2节点109耦接到具有两输入NAND逻辑门111的一个输入端,而NAND逻辑门111在输出端提供反相数据输出QB。请注意在可替换实施例中,可以在特定应用下用AND逻辑门(用于非反相的输出)代替NAND逻辑门111。将PC2节点109耦接到另一反相器113的输入端,反相器113的输出端耦接到反相器115的输入端,反相器115的输出端耦接到锁存器117的数据“D”输入端。反相器123的输出端耦接到锁存器117的反相时钟输入“CB”的节点CB124上以提供反相时钟信号,锁存器117的输出端耦接到存储节点120以提供信号ST的输出。存储节点120耦接到NAND逻辑门111的另一输入端。The PC2 node 109 is coupled to one input of a two-input NAND logic gate 111 which provides an inverted data output QB at the output. Please note that in alternative embodiments, the NAND logic gate 111 may be replaced by an AND logic gate (for the non-inverting output) in certain applications. PC2 node 109 is coupled to the input of another inverter 113, the output of inverter 113 is coupled to the input of inverter 115, and the output of inverter 115 is coupled to the Data "D" input. The output of inverter 123 is coupled to node CB 124 of the inverted clock input "CB" of latch 117 to provide an inverted clock signal, and the output of latch 117 is coupled to storage node 120 to provide signal ST Output. The storage node 120 is coupled to the other input terminal of the NAND logic gate 111 .

PC1节点103耦接到包含P沟道器件P3和P4、N沟道晶体管N3和N4以及反相器119的保持器电路116上。P3的源极耦接到VDD,它的栅极耦接到VSS,而它的漏极则耦接到P4的源极。P4的漏极耦接到PC1节点103,进一步将其耦接到反相器119的输入端并且耦接到N3的漏极。N3的源极耦接到N4的漏极,N4具有耦接到VSS的源极。反相器119的输出端耦接到N3和P4的栅极。PC1 node 103 is coupled to keeper circuit 116 comprising P-channel devices P3 and P4 , N-channel transistors N3 and N4 , and inverter 119 . The source of P3 is coupled to VDD, its gate is coupled to VSS, and its drain is coupled to the source of P4. The drain of P4 is coupled to PC1 node 103, which is further coupled to the input of inverter 119 and to the drain of N3. The source of N3 is coupled to the drain of N4, which has a source coupled to VSS. The output terminal of inverter 119 is coupled to the gates of N3 and P4.

PC2节点109进一步耦接到包含P沟道器件P5和P6、N沟道晶体管N5和N6以及反相器121的保持器电路118。P5的源极耦接到VDD,它的栅极耦接到PC1节点103,并且它的漏极耦接到P6的源极。P6的漏极耦接到PC2节点109,进一步将其耦接到反相器121的输入端并且耦接到N5的漏极。N5的源极耦接到N6的漏极,N6的源极耦接到VSS并且N6的栅极被耦接到CK节点104。反相器121的输出端耦接到N5和P6的栅极。PC2 node 109 is further coupled to keeper circuit 118 comprising P-channel devices P5 and P6 , N-channel transistors N5 and N6 , and inverter 121 . The source of P5 is coupled to VDD, its gate is coupled to PC1 node 103, and its drain is coupled to the source of P6. The drain of P6 is coupled to PC2 node 109, which is further coupled to the input of inverter 121 and to the drain of N5. The source of N5 is coupled to the drain of N6 , the source of N6 is coupled to VSS and the gate of N6 is coupled to CK node 104 . The output terminal of the inverter 121 is coupled to the gates of N5 and P6.

请注意这里所描述的N沟道和P沟道器件为MOS类型器件或者场效应管(FET)或者MOSFET等等,诸如NMOS、PMOS、NFET、PFET等类型晶体管器件。一般来说,每一个晶体管器件包含第一和第二电流端子(例如,漏极、源极、发射极、收集极等)以及控制节点(例如,栅极、基极等)。这里所描述的任何逻辑门,包含反相器和逻辑门(AND、NAND、OR、NOR等),以及这里所描述的任何锁存器,也可以用N沟道和P沟道器件或者晶体管等等来实现。Please note that the N-channel and P-channel devices described here are MOS type devices or field effect transistors (FETs) or MOSFETs, etc., such as NMOS, PMOS, NFET, PFET and other types of transistor devices. In general, each transistor device includes first and second current terminals (eg, drain, source, emitter, collector, etc.) and a control node (eg, gate, base, etc.). Any logic gate described here, including inverters and logic gates (AND, NAND, OR, NOR, etc.), and any latch described here, can also be used with N-channel and P-channel devices or transistors, etc. Wait for it to come true.

在一个实施例中,将锁存器117配置为包含传递逻辑门等的透明锁存器,其中,当C输入是高电位并且CB输入是低电位时,将D输入传递到Q输出,并且当C输入是低电位并且CB输入是高电位时,将Q输出与D输入隔离。电源供应节点VSS具有与另一电源供应节点VDD有关的适当参考电压(例如,接地端)。VDD和VSS之间的电源供应电压是取决于特定结构或者所使用技术的任意适当电压电平(例如,1V、1.5V、3V、5V等)。In one embodiment, the latch 117 is configured as a transparent latch comprising pass logic gates, etc., where the D input is passed to the Q output when the C input is high and the CB input is low, and when When the C input is low and the CB input is high, the Q output is isolated from the D input. The power supply node VSS has an appropriate reference voltage (eg, ground) relative to another power supply node VDD. The power supply voltage between VDD and VSS is any suitable voltage level (eg, 1V, 1.5V, 3V, 5V, etc.) depending on the particular architecture or technology used.

时钟信号CK可以在本地(例如,本地振荡器等等,未示出)产生或者从外部源提供在CK节点104上而产生。在正逻辑上设置所述CK信号,其中,对于数据评估来说,当低电位时它提供建立时间并且当高电位时它提供保持时间。因此,所述的操作时钟沿是时钟的上升沿(risingedge)。负逻辑时钟信号也可应用在本发明中。一般来说,时钟信号为了定时和同步等等的目的,在第一和第二状态之间切换。Clock signal CK may be generated locally (eg, a local oscillator, etc., not shown) or provided on CK node 104 from an external source. The CK signal is set on positive logic, where it provides setup time when low and hold time when high for data evaluation. Therefore, the operating clock edge is the rising edge of the clock. Negative logic clock signals are also applicable in the present invention. Generally, the clock signal toggles between the first and second states for purposes of timing and synchronization, among other things.

在正常操作期间,当CK被设置为低电位时,将预充电节点PC1103和PC2109两者分别经由P1和P2预充电到高电位。保持器电路116和118的N4和N6分别被关闭,而保持器电路116的P3和P4被开启以保持PC1节点103为高电位。N1被关闭并且反相器105将节点107拉到高电位以使N2被关闭。During normal operation, when CK is set low, both precharge nodes PC1103 and PC2109 are precharged to high potential via P1 and P2 respectively. N4 and N6 of keeper circuits 116 and 118 are respectively turned off, while P3 and P4 of keeper circuit 116 are turned on to keep PC1 node 103 high. N1 is turned off and inverter 105 pulls node 107 high to turn N2 off.

当CK为低电位时,数据输入DN通常会改变或者转换状态。假设当CK变成高电位且数据信号DN不引起数据块102进行评估时,P1和P2将关闭且N4、N6和N1被导通。PC1节点103透过保持器电路116(经由P3和P4)保持被拉到的高电位,而反相器105則将节点107拉为低电位,以便导通N2而将PC2节点109放电为低电位。响应于PC2变成低电位,NAND逻辑门111将QB拉到高电位(或者保持QB为高电位)。在极小的延迟后,反相器113和115将锁存器117的D输入拉为低电位。由于CK是高电位并且反相器123将CB拉为低电位,所以锁存器117处于透明状态从而传递位于低电位状态的D输入以将存储节点120拉到低电位(或者保持ST于低电位)。保持器电路118的N5和N6导通并且保持PC2节点109为低电位直到CK变成低电位为止。When CK is low, the data input DN normally changes or transitions state. Assuming that when CK goes high and data signal DN does not cause data block 102 to be evaluated, P1 and P2 will be off and N4, N6 and N1 will be on. PC1 node 103 is held high by keeper circuit 116 (via P3 and P4), while inverter 105 pulls node 107 low to turn on N2 and discharge PC2 node 109 low . In response to PC2 going low, NAND logic gate 111 pulls QB high (or holds QB high). After a very small delay, inverters 113 and 115 pull the D input of latch 117 low. Since CK is high and inverter 123 pulls CB low, latch 117 is in a transparent state passing the D input in a low state to pull storage node 120 low (or hold ST low ). N5 and N6 of keeper circuit 118 conduct and hold PC2 node 109 low until CK goes low.

当CK返回低电位时,锁存器117切换到它的隔离状态以保持存储节点120为低电位。在此时,不论PC2节点109的状态有任何改变,NAND逻辑门111皆保持QB被拉的高电位。CK关闭N4和N6并且导通P1和P2,以便PC1和PC2两者被再一次预充电到高电位。QB输出信号被锁存到高电位,而快速动态寄存器100准备好在下一个CK周期中为另一数据进行评估。When CK returns low, latch 117 switches to its isolated state to hold storage node 120 low. At this time, regardless of any changes in the state of the PC2 node 109 , the NAND logic gate 111 keeps QB pulled high. CK turns off N4 and N6 and turns on P1 and P2 so that both PC1 and PC2 are precharged to high potential again. The QB output signal is latched high and the fast dynamic register 100 is ready to be evaluated for another data in the next CK cycle.

在下一个周期中,假定数据输入DN改变于是数据块102进行评估。当CK返回到高电位时,P1关闭,N1导通并且数据块102进行评估以将PC1节点103拉到低电位。数据块102和N1之内的器件被充分地改变大小以克服(overcome)P3和P4的操作(由于保持器电路一般较小且导通较小的电流,因以让通过数据块102的电流大于流过P3和P4的电流,即可克服因P3和P4之操作而影响节点103的电位)。随着将PC1节点103拉到低电位,导通N3和N4以保持PC1为低电位。变成低电位的PC1使P5导通并经由P5和P6来保持PC2节点109被拉到高电位。请注意因为将节点107拉到低电位并且将PC1节点103拉到低电位,所以N2可以在瞬间些微地导通。然而,P5和P6保持PC2节点109为高电位。In the next cycle, data block 102 is evaluated assuming the data input DN changes. When CK returns high, P1 turns off, N1 turns on and data block 102 evaluates to pull PC1 node 103 low. The devices within block 102 and N1 are sized sufficiently to overcome the operation of P3 and P4 (since the keeper circuits are generally smaller and conduct less current, so that the current through block 102 is greater than The current flowing through P3 and P4 can overcome the potential of node 103 affected by the operation of P3 and P4). With PC1 node 103 pulled low, N3 and N4 are turned on to keep PC1 low. PC1 going low turns on P5 and keeps PC2 node 109 pulled high via P5 and P6. Note that N2 may be turned on slightly for a moment because node 107 is pulled low and PC1 node 103 is pulled low. However, P5 and P6 keep PC2 node 109 high.

当CK是高电位时,锁存器117是透明的以便将PC2节点109的高电位值传递到存储节点120,于是NAND逻辑门111的两个输入都是高电位,进而将QB拉到低电位。当CK接下来变成低电位时,在锁存器117输出端的存储节点120将锁存到高电位,直到下一个CK周期为止。When CK is high, latch 117 is transparent to pass the high value of PC2 node 109 to storage node 120, so both inputs of NAND logic gate 111 are high, which in turn pulls QB low . When CK next goes low, storage node 120 at the output of latch 117 will latch high until the next CK cycle.

反相器105(和保持器电路116和118)系响应于CK,P1、P2、N1、N2、而共同执行预充电电路之操作。当CK是低电位时,预充电电路将节点103和109都预充电为高电位。当CK变成高电位时,基于输入数据块102是否进行评估,节点103和109之一将变成低电位。Inverter 105 (and keeper circuits 116 and 118) collectively perform precharge circuit operations in response to CK, P1, P2, N1, N2. When CK is low, the precharge circuit precharges both nodes 103 and 109 high. When CK goes high, one of nodes 103 and 109 will go low based on whether input data block 102 is evaluated.

图2-5绘示用于执行所需逻辑功能的数据块102的不同配置。图2示出简单配置,其中数据块102包含单个N沟道晶体管ND1,具有耦接到PC1节点103的漏极,耦接到DCH节点101的源极,以及接收单个数据输入D1的栅极。在此情形中,因为,当D1是高电位时ND1导通,所以当CK变成高电位时,数据块102进行评估。当D1是低电位时ND1保持关闭,所以数据块102不进行评估,所以当CK变成高电位时PC1节点103即保持高电位。2-5 illustrate different configurations of data blocks 102 for performing the required logical functions. Figure 2 shows a simple configuration in which the data block 102 contains a single N-channel transistor ND1 with a drain coupled to PC1 node 103, a source coupled to DCH node 101, and a gate receiving a single data input D1. In this case, because ND1 conducts when D1 is high, data block 102 evaluates when CK goes high. ND1 remains off when D1 is low, so data block 102 is not evaluated, so PC1 node 103 remains high when CK goes high.

图3是包含被并联耦接的N个N沟道晶体管ND1、ND2、….NDN(ND1-NDN)的数据块102的可替换实施例的架构图。具体地说,N沟道晶体管ND1-NDN的每一个具有耦接到DCH节点101的源极,耦接到PC1节点103的漏极,以及接收N个数据输入D1、D2、….DN(D1-DN)的相应之一的栅极。在此情形中,当数据输入D1-DN的任意之一是高电位时(诸如根据逻辑OR功能),数据块102进行评估。FIG. 3 is an architectural diagram of an alternative embodiment of a data block 102 comprising N N-channel transistors ND1 , ND2 , . . . NDN (ND1-NDN) coupled in parallel. Specifically, each of N-channel transistors ND1-NDN has a source coupled to DCH node 101, a drain coupled to PC1 node 103, and receives N data inputs D1, D2, . . . DN (D1 -DN) to the gate of the corresponding one. In this case, data block 102 is evaluated when any one of data inputs D1-DN is high, such as according to a logical OR function.

图4是包含串联耦接的N个N沟道晶体管ND1、ND2、….NDN(ND1-NDN)的数据块102的可替换实施例的架构图。具体地说,第一N沟道晶体管ND1具有耦接到PC1节点103的漏极,第二N沟道晶体管ND2具有耦接到ND1的源极的漏极,以此类推,直到最后的N沟道晶体管NDN具有耦接到DCH节点101的源极。N沟道晶体管ND1-NDN的栅极接收N个数据输入D1、D2、….DN(D1-DN)的相应之一。在此情形中,只有当数据输入D1-DN的每一个都是高电位时(诸如根据逻辑AND功能),数据块102才进行评估。FIG. 4 is an architectural diagram of an alternative embodiment of a data block 102 comprising N N-channel transistors ND1 , ND2 , . . . NDN (ND1-NDN) coupled in series. Specifically, the first N-channel transistor ND1 has a drain coupled to PC1 node 103, the second N-channel transistor ND2 has a drain coupled to the source of ND1, and so on, until the final N-channel Channel transistor NDN has a source coupled to DCH node 101 . The gates of N-channel transistors ND1-NDN receive respective ones of N data inputs D1, D2, . . . DN (D1-DN). In this case, the data block 102 is only evaluated if each of the data inputs D1-DN is high, such as according to a logical AND function.

图5是包含以任意适当的串联和并联耦接的组合形式耦接的N个N沟道晶体管ND1、ND2、….NDN(ND1-NDN)的数据块102的可替换实施例的架构图。在此情形中,第一组的M个器件ND1-NDM被互相并联以耦接在PC1节点103和中间节点501之间,并且剩余器件NDM+1、NDM+2、…NDN被并联耦接在中间节点501和DCH节点101之间。此外,N沟道晶体管ND1-NDN的栅极接收N个数据输入D1、D2、….DN(D1-DN)的相应之一。在此情形中,只有当数据输入D1-DM之一是高电位并且数据输入DM+1-DN之一是高电位时(诸如根据逻辑OR-AND功能),数据块102才进行评估。在每一层中并行耦接的任何适当数量的器件,与相应的附加中间节点一起来增加附加层,皆被本发明所考虑并可运用于适当实施例中。FIG. 5 is an architectural diagram of an alternative embodiment of a data block 102 comprising N N-channel transistors ND1 , ND2 , . . . NDN ( ND1 -NDN ) coupled in any suitable combination of series and parallel coupling. In this case, the first set of M devices ND1-NDM are connected in parallel to each other to be coupled between PC1 node 103 and intermediate node 501, and the remaining devices NDM+1, NDM+2, . . . NDN are coupled in parallel at Between the intermediate node 501 and the DCH node 101. Furthermore, the gates of the N-channel transistors ND1-NDN receive respective ones of the N data inputs D1, D2, . . . DN (D1-DN). In this case, the data block 102 is evaluated only if one of the data inputs D1-DM is high and one of the data inputs DM+1-DN is high, such as according to a logical OR-AND function. Any suitable number of devices coupled in parallel in each layer, along with corresponding additional intermediate nodes to add additional layers, is contemplated by the present invention and may be employed in suitable embodiments.

图6是根据一个实施例的锁存器600的架构图,其可以被用作锁存器117。在此情形中,锁存器600包含N沟道晶体管NL1、NL2和NL3、P沟道器件PL1、PL2和PL3以及反相器603。未反相时钟C提供给NL1和PL3的栅极,并且反相时钟CB提供给PL1和NL2的栅极。数据输入D提供给进一步被耦接到NL1和PL1的源极的输入节点601。NL1和PL1的漏极一起耦接在提供输出信号Q的输出节点605。PL2、PL3、NL2和NL3耦接成实现保持器电路的堆栈配置。具体地说,PL2具有耦接到VDD的源极,耦接到PL3的源极的漏极,PL3具有耦接在输出节点605与NL2的漏极的漏极。NL2的源极耦接到NL3的漏极,NL3具有耦接到VSS的源极。节点605耦接到反相器603的输入端,反相器603具有耦接到NL3和PL2的栅极的输出端。FIG. 6 is an architectural diagram of a latch 600 that may be used as latch 117 according to one embodiment. In this case, latch 600 includes N-channel transistors NL1 , NL2 and NL3 , P-channel devices PL1 , PL2 and PL3 , and inverter 603 . The non-inverted clock C is supplied to the gates of NL1 and PL3, and the inverted clock CB is supplied to the gates of PL1 and NL2. Data input D is provided to input node 601 which is further coupled to the sources of NL1 and PL1. The drains of NL1 and PL1 are coupled together at an output node 605 that provides an output signal Q. PL2, PL3, NL2, and NL3 are coupled to implement a stack configuration of keeper circuits. Specifically, PL2 has a source coupled to VDD, a drain coupled to the source of PL3, and PL3 has a drain coupled at output node 605 and the drain of NL2. The source of NL2 is coupled to the drain of NL3, which has a source coupled to VSS. Node 605 is coupled to the input of inverter 603, which has an output coupled to the gates of NL3 and PL2.

在操作中,当C是高电位并且CB是低电位时,锁存器600处于它的透明状态。在透明状态中,PL3和NL2保持关闭或者被关闭以将Q输出节点605与保持器的操作隔离。进一步,将PL1和NL1两者都导通以提供从输入节点601到输出节点605的低阻抗路径,以便将输出Q驱动到输入D的状态。当C是低电位并且CB是高电位时,锁存器600处于它的隔离状态,其中PL1和NL1将关闭以使Q和D隔离。如果Q是低电位,则将NL2和NL3两者都导通以保持Q被锁存到低电位。如果Q是高电位,则将PL2和PL3两者都导通以保持Q被锁存到高电位。当被用作锁存器117时,CK提供给时钟输入C,CB提供给时钟输入CB,反相器115的输出提供给数据输入端D,并且输出Q驱动存储节点120。In operation, when C is high and CB is low, latch 600 is in its transparent state. In the transparent state, PL3 and NL2 remain off or are turned off to isolate the Q output node 605 from the operation of the keeper. Further, both PL1 and NL1 are turned on to provide a low impedance path from input node 601 to output node 605 in order to drive output Q to the state of input D. When C is low and CB is high, latch 600 is in its isolation state, where PL1 and NL1 will be off to isolate Q and D. If Q is low, turn both NL2 and NL3 on to keep Q latched low. If Q is high, both PL2 and PL3 are turned on to keep Q latched high. When used as latch 117 , CK is provided to clock input C, CB is provided to clock input CB, the output of inverter 115 is provided to data input D, and output Q drives storage node 120 .

可以使用消耗较少空间和电能的较小器件以高效方式实现锁存器600。充分调整NL1和PL1的大小(例如,较大)以确保D输入和Q输出之间的快速转换。然而,在一个实施例中,将其余器件PL2、PL3、NL2、NL3和反相器603的器件做的很小,因为它们仅执行保持器的操作。如虚线箭头所示,反相器603被配置为串联耦接的N沟道晶体管NI与P沟道器件PI,N沟道晶体管NI和P沟道器件PI具有共同耦接在输入IN的栅极以及共同耦接在输出OUT的漏极。在一个实施例中,器件PI和NI是非常小的器件以消耗更少的空间和功率。可以用类似方式制作反相器105、123、113和115,但是使用更大器件来执行更快的切换操作。NL1和PL1执行被外部逻辑门(例如,反相器115的输出)所驱动的主要切换操作,然而,响应于反相器603的切换,器件PL2和PL3或者NL2和NL3进行切换以维持切换后Q的状态。Latch 600 can be implemented in an efficient manner using smaller devices that consume less space and power. NL1 and PL1 are sized sufficiently (eg, larger) to ensure fast transitions between D inputs and Q outputs. However, in one embodiment, the remaining devices PL2, PL3, NL2, NL3 and inverter 603 are made small because they only perform keeper operations. As shown by the dotted arrow, the inverter 603 is configured as an N-channel transistor NI and a P-channel device PI coupled in series, and the N-channel transistor NI and the P-channel device PI have gates commonly coupled to the input IN and are commonly coupled to the drain of the output OUT. In one embodiment, devices PI and NI are very small devices to consume less space and power. Inverters 105, 123, 113, and 115 can be fabricated in a similar manner, but using larger devices to perform faster switching operations. NL1 and PL1 perform the primary switching operation driven by an external logic gate (e.g., the output of inverter 115), however, in response to switching of inverter 603, devices PL2 and PL3 or NL2 and NL3 switch to maintain the switched Q's status.

考虑QB从低电位转换到高电位时的第一种情形。在此情形中,当CK是低电位时,从前一个周期开始将ST锁存到高电位,PC2预充电到高电位并且QB初始为低电位。在此情形中,当CK变为高电位并且数据块102无法进行评估时,所述延迟包括反相器105将节点107拉到低电位进而导通N2以将PC2拉到低电位的延迟,以及NAND逻辑门111响应地设置它的输出为高电位的延迟。在经过反相器113和115以及锁存器117的延迟后,存储节点120变为低电位以保持QB为高电位。反相器113可缩小以最小化在PC2节点109上的负载。一旦存储节点120变为低电位,CK将可以转换回低电位以起始下一个周期。Consider the first case when QB transitions from low to high potential. In this case, when CK is low, ST is latched high from the previous cycle, PC2 is precharged high and QB is initially low. In this case, when CK goes high and data block 102 cannot be evaluated, the delay includes the delay of inverter 105 pulling node 107 low which turns on N2 to pull PC2 low, and NAND logic gate 111 responsively sets its output high for a delay. After a delay by inverters 113 and 115 and latch 117, storage node 120 goes low to keep QB high. Inverter 113 can be scaled down to minimize the load on PC2 node 109 . Once the storage node 120 goes low, CK can switch back to low to start the next cycle.

考虑QB从高电位转换到低电位时的第二种情形。由于是从第一种情形所延续,因此从前一个周期开始将ST锁存到低电位,以便QB初始为高电位。当CK返回到低电位时,将PC2节点109再一次预充电到高电位。由于当CK是低电位时数据输入改变,所以反相器113和115产生转换以使锁存器117的数据输入D是高电位。当CK的下一个高电位设置使得数据块102在下一个周期进行评估时,则当锁存器117成为透明时使得PC2节点109保持高电位,以便反相器115通过锁存器117设置所述存储节点120。响应于ST变为高电位,NAND逻辑门111将QB拉到低电位。Consider the second case when QB transitions from a high potential to a low potential. Since it is a continuation from the first case, ST is latched low from the previous cycle so that QB is initially high. When CK returns low, the PC2 node 109 is precharged high again. Since the data input changes when CK is low, inverters 113 and 115 toggle to bring the data input D of latch 117 high. When the next high setting of CK causes data block 102 to be evaluated on the next cycle, then PC2 node 109 remains high when latch 117 becomes transparent so that inverter 115 sets the stored Node 120. In response to ST going high, NAND logic gate 111 pulls QB low.

从CK变为高电位到QB变为高电位的第一情形约有2.5个逻辑门的延迟。由于N2的栅极已被预充电为高电位,随着响应于CK转换而使反相器105的输出变成低电位时,PC2节点109同时被拉到低电位,此情形将被NAND逻辑门111所感知。There is a delay of approximately 2.5 logic gates from CK going high to the first instance of QB going high. Since the gate of N2 has been precharged high, as the output of inverter 105 goes low in response to the CK transition, PC2 node 109 is simultaneously pulled low, which will be detected by the NAND logic gate 111 perceived.

针对第二情形,参照图6中所示的锁存器600,当CK转换到高电位时D输入已经是高电位。随着CK变成高电位将C输入拉到高电位,NL1导通以引发(initiate)将Q输出拉到高电位,因此将存储节点120拉到高电位。NAND逻辑门111作为响应将QB拉到低电位,其显现为仅2个逻辑门的延迟。然而,请注意NL1本身不足以将存储节点120完全地拉到高电位。随着CK变成高电位,CB通过反相器123、经过1个逻辑门的延迟变成低电位。变为低电位的CB导通PL1以完成Q输出变为高电位的转换,以便将存储节点120完全拉到高电位。尽管这样显现为3个逻辑门的延迟,但被用作锁存器117的锁存器600的NL1和PL1的组合引发了比3个逻辑门延迟更快的QB的转换。因此,从CK变为高电位到QB变为低电位的整个延迟也大约是2.5个逻辑门的延迟。针对第二情形,锁存器117的配置和部署尽可能靠近最终NAND逻辑门111,用于最小化第二情形的延迟,从而防止该延迟成为所述电路的关键延迟。For the second case, referring to the latch 600 shown in Figure 6, the D input is already high when CK transitions high. As CK goes high pulling the C input high, NL1 turns on to initiate pulling the Q output high, thus pulling storage node 120 high. NAND logic gate 111 pulls QB low in response, which appears as a delay of only 2 logic gates. However, please note that NL1 by itself is not sufficient to fully pull storage node 120 high. As CK goes high, CB goes low through inverter 123 with a delay of 1 logic gate. CB going low turns on PL1 to complete the transition of the Q output going high to pull storage node 120 fully high. Although this appears as a delay of 3 logic gates, the combination of NL1 and PL1 of latch 600 used as latch 117 induces a transition of QB faster than the 3 logic gate delay. Therefore, the overall delay from CK going high to QB going low is also about a 2.5 logic gate delay. For the second case, the configuration and placement of the latch 117 as close as possible to the final NAND logic gate 111 serves to minimize the delay of the second case, preventing this delay from becoming a critical delay for the circuit.

图7是根据一个实施例实现的可扫描快速动态寄存器700的架构图。除了用NAND逻辑门701代替反相器113之外,可扫描快速动态寄存器700包含相同参考编号的相同组件。PC2节点109耦接到NAND逻辑门701的一个输入端。NAND逻辑门701提供附加输入端,用于注入做为扫描操作之用的扫描输入数据(以下將进一步描述)。可扫描快速动态寄存器700包含与数据块102并行耦接的附加N沟道晶体管NS。具体地说,NS的漏极耦接到PC1节点103,它的源极耦接到DCH节点101,并且它的栅极接收扫描使能信号SE。NS可实现为带有充分尺寸的单个晶体管,以便当CK变成高电位时将PC1拉到DCH,或者可以将其实现为多个并行的晶体管。输入数据块102和NS共同形成数据和扫描使能电路。FIG. 7 is an architectural diagram of a scannable fast dynamic register 700 implemented according to one embodiment. Scannable fast dynamic register 700 includes the same components with the same reference numbers, except that inverter 113 is replaced by NAND logic gate 701 . PC2 node 109 is coupled to one input of NAND logic gate 701 . NAND logic gate 701 provides an additional input for injecting scan-in data for scan operations (further described below). Scannable fast dynamic register 700 includes an additional N-channel transistor NS coupled in parallel with data block 102 . Specifically, the drain of NS is coupled to PC1 node 103, its source is coupled to DCH node 101, and its gate receives scan enable signal SE. NS can be implemented as a single transistor with sufficient size to pull PC1 to DCH when CK goes high, or it can be implemented as multiple transistors in parallel. The input data block 102 and NS together form the data and scan enable circuitry.

可扫描快速动态寄存器700进一步包含另一NAND逻辑门703,其具有接收SE信号的第一输入端、接收扫描输入信号SI的另一输入端、以及耦接到另一锁存器705的数据输入端D的输出端。NAND逻辑门703实现用于使能和接收扫描输入数据的扫描使能逻辑。锁存器705可以与锁存器117大体上相似的方式进行配置,也可以将锁存器705实现为锁存器600。锁存器705包含耦接到节点124、用于接收反相时钟信号CB的非反相时钟输入端C,耦接到节点104用于接收非反相时钟信号CK的反相时钟输入CB,以及在扫描数据节点707上提供反相扫描输入信号SIB的输出端。耦接扫描数据节点707将SIB提供给NAND逻辑门701的另一输入端。The scannable fast dynamic register 700 further includes another NAND logic gate 703 having a first input terminal receiving the SE signal, another input terminal receiving the scan input signal SI, and a data input coupled to another latch 705 The output terminal of terminal D. NAND logic gate 703 implements scan enable logic for enabling and receiving scan-in data. Latch 705 may be configured in a substantially similar manner to latch 117 , and latch 705 may also be implemented as latch 600 . Latch 705 includes a non-inverted clock input C coupled to node 124 for receiving an inverted clock signal CB, an inverted clock input CB coupled to node 104 for receiving a non-inverted clock signal CK, and The output of the inverted scan input signal SIB is provided on scan data node 707 . Coupling the scan data node 707 provides the SIB to the other input of the NAND logic gate 701 .

当扫描使能信号SE被取消设置为低电位时,则NS保持关闭并且将NAND逻辑门703的输出設置为高电位。锁存器705将SIB设置为高电位,以使NAND逻辑门701得以用被其取代的反相器113相同的方式高效地操作。在此方式中,当扫描使能信号SE被取消设置为低电位时,则扫描快速动态寄存器700以与用于正常操作的快速动态寄存器100相同的方式操作。When the scan enable signal SE is deasserted low, then NS remains off and sets the output of the NAND logic gate 703 high. Latch 705 sets SIB high so that NAND logic gate 701 operates efficiently in the same manner as inverter 113 it replaces. In this manner, when the scan enable signal SE is deasserted low, the scan fast dynamic register 700 operates in the same manner as the fast dynamic register 100 for normal operation.

在SE被设置为高电位以使能扫描输入数据注入的扫描模式期间,在某种程度上旁路了可扫描快速动态寄存器700的动态特性。请注意所述动态特性并没有完全被旁路,因为在扫描模式中,节点PC1103会对每一个CK周期放电。当SE是高电位时,NS的栅极将拉到高电位而使NS导通,以便当CK变成高电位时导通NS,提供从节点PC1103至N1的电流路径,因此数据块102将被短路或者旁路掉。不管一个或者更多数据输入DN的状态为何,通过SE仿真数据评估而导通NS,以便当CK变成高电位时将PC1节点103拉到低电位,并且当CK变回到低电位时,继续将PC1节点103预充电为高电位。在CK的连续周期期间PC2节点109保持高电位,而NAND逻辑门701的状态由SIB所决定而NAND逻辑门111的状态则由ST所决定。The dynamic nature of the scannable fast dynamic register 700 is somewhat bypassed during scan mode where SE is set high to enable scan-in data injection. Note that the dynamics are not completely bypassed, because in scan mode, node PC1103 discharges every CK cycle. When SE is high, the gate of NS will be pulled high to turn NS on, so that when CK goes high, NS will be turned on, providing a current path from node PC1103 to N1, so data block 102 will be short circuit or bypass. Regardless of the state of one or more data inputs DN, NS is turned on by SE simulation data evaluation to pull PC1 node 103 low when CK goes high, and continues when CK goes back low. PC1 node 103 is precharged to a high potential. PC2 node 109 remains high during successive cycles of CK, while the state of NAND logic gate 701 is determined by SIB and the state of NAND logic gate 111 is determined by ST.

当SE被设置为高电位时,NAND逻辑门703作为输入扫描输入信号SI的反相器来操作。当在扫描模式期间CK为低电位时,锁存器705处于透明模式以便SI信号被反相为SIB信号并传递到NAND逻辑门701,随后传递到锁存器117的D输入端。当CK为低电位时,锁存器117处于隔离模式。当CK变成高电位时,锁存器705将保持SIB的当前值,并且锁存器117现在以透明模式将SIB作为ST值传递。在此方式中,在CK的后续周期期间,锁存器705和117以类似于主从触发方式来共同地操作,以便将扫描输入SI锁存到寄存器700中。When SE is set to a high potential, the NAND logic gate 703 operates as an inverter inputting the scan input signal SI. When CK is low during scan mode, the latch 705 is in a transparent mode so that the SI signal is inverted to the SIB signal and passed to the NAND logic gate 701 and then to the D input of the latch 117 . When CK is low, the latch 117 is in isolation mode. When CK goes high, latch 705 will hold the current value of SIB, and latch 117 will now pass SIB as the ST value in transparent mode. In this manner, during subsequent cycles of CK, latches 705 and 117 collectively operate in a master-slave fashion to latch scan input SI into register 700 .

取决于提供选择输出的操作模式,NAND逻辑门701可作为选择电路来操作。在将SE取消设置为低电位的正常模式期间,SIB保持高电位以便NAND逻辑门701将PC2节点109的状态高效地反相作为它的输出。反相器115再反相NAND逻辑门701的输出值并提供给锁存器117的D输入端。在SE被设置为高电位的扫描模式期间,PC2节点109保持高电位以使NAND逻辑门701将SIB的状态高效地在它的输出反相。再一次,反相器115再反相NAND逻辑门701的输出值并提供给锁存器117的D输入端。因此,在SE被设置的扫描模式期间,NAND逻辑门701使能扫描输入数据的注入。Depending on the mode of operation in which the select output is provided, NAND logic gate 701 may operate as a select circuit. During normal mode with SE deasserted low, SIB remains high so that NAND logic gate 701 effectively inverts the state of PC2 node 109 as its output. The inverter 115 then inverts the output value of the NAND logic gate 701 and provides it to the D input terminal of the latch 117 . During scan mode with SE set high, PC2 node 109 is held high so that NAND logic gate 701 effectively inverts the state of SIB at its output. Again, the inverter 115 inverts the output value of the NAND logic gate 701 and provides it to the D input of the latch 117 . Thus, during scan mode with SE set, NAND logic gate 701 enables injection of scan-in data.

图8是通常作为存储电路来操作的透明锁存器117和705的任意之一或者两者的可替换实施例的架构图。用多路复用器(MUX)801和一对反相器803和805来代替所述透明锁存器的任何之一或者两者。MUX801具有与透明锁存器的“D”输入端类似方式操作的第一输入端I1,并且具有与透明锁存器的“Q”输出端类似方式操作的输出端(O)。MUX801进一步具有一对选择输入端S1和S2,每一个选择输入端基于代替锁存器117还是代替锁存器705而接收CK或CB。MUX801的输出提供给反相器803的输入端,反相器803具有提供给反相器805的输入端的输出端,反相器805具有提供给MUX801的第二输入端I2的输出端。FIG. 8 is an architectural diagram of an alternative embodiment of either or both of transparent latches 117 and 705 generally operating as storage circuits. Either or both of the transparent latches are replaced with a multiplexer (MUX) 801 and a pair of inverters 803 and 805 . MUX 801 has a first input I1 that operates in a similar manner to the "D" input of the transparent latch, and has an output (O) that operates in a similar manner to the "Q" output of the transparent latch. MUX 801 further has a pair of select inputs S1 and S2 each receiving CK or CB based on whether latch 117 is replaced or latch 705 is replaced. The output of MUX 801 is supplied to the input of inverter 803 having an output supplied to the input of inverter 805 which has an output supplied to the second input I2 of MUX 801 .

在操作上,当时钟信号CK和CB具有使MUX801选择输入I1作为输出O的状态时,则MUX801以“透明”状态来操作并将数据输入D提供为数据Q做输出。当反转所述时钟信号以使MUX801选择输入I2作为输出O时,则MUX801以隔离状态来操作,并且不管D输入的改变而高效地“锁存”输出Q。In operation, when clock signals CK and CB have states that cause MUX 801 to select input I1 as output O, then MUX 801 operates in a "transparent" state and provides data input D as data Q as output. When the clock signal is inverted such that MUX 801 selects input I2 as output O, then MUX 801 operates in isolation and effectively "latches" output Q regardless of changes at the D input.

当代替锁存器117时,反相器115的输出将提供给MUX801的输入端I1,MUX801的输出将ST信号提供在存储节点120上,CK提供给MUX801的S1选择输入端,而CB提供给MUX801的S2选择输入端。当代替锁存器705时,将NAND逻辑门703的输出提供给MUX801的输入I1端,MUX801的输出端将SIB信号提供在扫描数据节点707上,CK提供给MUX801的S2选择输入端,并且将CB提供给MUX801的S1选择输入端。When replacing latch 117, the output of inverter 115 would be provided to input I1 of MUX 801, the output of MUX 801 would provide the ST signal on storage node 120, CK would be provided to the S1 select input of MUX 801, and CB would be provided to S2 selection input of MUX801. When replacing the latch 705, the output of the NAND logic gate 703 is provided to the input I1 terminal of the MUX801, the output terminal of the MUX801 provides the SIB signal on the scan data node 707, CK is provided to the S2 select input terminal of the MUX801, and the CB is provided to the S1 selection input of MUX801.

图9显示合并了每一个根据可扫描快速动态寄存器700实现的可扫描快速动态寄存器901、905以及909的集成电路(IC)900的方框架构图。尽管只绘示三个可扫描快速动态寄存器901、905和909,但本领域普通技术人员可基于特定实现将任意数量的寄存器合并在IC上。此外,所绘示的可扫描快速动态寄存器901、905和909的每一个,系用于接收不同数量的输入数据和输出一个数据位,本领域普通技术人员应知,基于寄存器尺寸可以并行提供多个寄存器以同时存储任意数量的位元。FIG. 9 shows a block diagram of an integrated circuit (IC) 900 incorporating scannable fast dynamic registers 901 , 905 , and 909 each implemented in accordance with scannable fast dynamic register 700 . Although only three scannable fast dynamic registers 901, 905, and 909 are shown, one of ordinary skill in the art may incorporate any number of registers on the IC based on the particular implementation. In addition, each of the illustrated scannable fast dynamic registers 901, 905, and 909 is used to receive a different amount of input data and output a data bit. Those of ordinary skill in the art should know that multiple registers can be provided in parallel based on the register size. registers to store any number of bits simultaneously.

一个或更多数据输入DNIN提供给可扫描快速动态寄存器901的数据或者“DN”输入,而可扫描快速动态寄存器901具有提供给组合逻辑电路903的输出QB端。N是大于零的任意适合整数并且可以是如前所述的单个数据位元。组合逻辑电路903具有提供给可扫描快速动态寄存器905的DMIN输入端的“M”个输出端,可扫描快速动态寄存器905具有提供给组合逻辑电路907的输出QB端。M是大于零的任意适合整数并且可以是如前所述的单个数据位元。将组合逻辑电路907的P个输出提供给可扫描快速动态寄存器909的DPIN输入端,可扫描快速动态寄存器909具有提供给组合逻辑电路911的输出QB端,组合逻辑电路911具有提供Q个数据输出DQOUT的输出端。P和Q每一个是大于零的任意适当整数,并且两者中的任何一个可以是如前所述的单个数据位元。将时钟信号CLK提供给可扫描快速动态寄存器901、905和909的每一个的时钟输入端。One or more data inputs DNIN are provided to the data or “DN” input of scannable fast dynamic register 901 which has an output QB terminal provided to combinatorial logic circuit 903 . N is any suitable integer greater than zero and may be a single data bit as previously described. Combinational logic circuit 903 has “M” outputs provided to the DMIN input of scannable fast dynamic register 905 which has an output QB terminal provided to combinatorial logic circuit 907 . M is any suitable integer greater than zero and may be a single data bit as previously described. The P outputs of the combinatorial logic circuit 907 are provided to the DPIN input terminals of the scannable fast dynamic register 909, and the scannable fast dynamic register 909 has an output QB end provided to the combinatorial logic circuit 911, and the combinatorial logic circuit 911 has Q data output terminals provided. DQOUT output terminal. P and Q are each any suitable integer greater than zero, and either may be a single data bit as previously described. The clock signal CLK is provided to the clock input of each of the scannable fast dynamic registers 901 , 905 and 909 .

如所示出的,经由IC引脚从外部源来提供扫描使能信号SE,端SE提供给可扫描快速动态寄存器901、905和909的每一个的SE使能输入端。输入扫描信号SCANIN提供给可扫描快速动态寄存器901的扫描输入SI。如所绘示的,可以从外部IC引脚提供SCANIN。可扫描快速动态寄存器901的QB输出提供给可扫描快速动态寄存器905的SI输入端,可扫描快速动态寄存器905具有提供给可扫描快速动态寄存器909的SI输入端的QB输出端。可扫描快速动态寄存器909的QB输出提供输出扫描信号SCANOUT。如所绘出的,可经由IC引脚向外部提供SCANOUT信号。As shown, a scan enable signal SE is provided from an external source via an IC pin, terminal SE is provided to the SE enable input of each of the scannable fast dynamic registers 901 , 905 and 909 . The input scan signal SCANIN is provided to the scan input SI of the scannable fast dynamic register 901 . As shown, SCANIN can be provided from an external IC pin. The QB output of scannable fast dynamic register 901 is provided to the SI input of scannable fast dynamic register 905 , which has a QB output provided to the SI input of scannable fast dynamic register 909 . The QB output of scannable fast dynamic register 909 provides the output scan signal SCANOUT. As depicted, the SCANOUT signal can be provided externally via an IC pin.

在正常操作期间,SE拉到低电位,以有效地禁止可扫描快速动态寄存器901、905和909的SI输入。DNIN可在IC100上产生,或者经由相应的IC引脚或类似的方式从外部来源提供。在正常操作期间,寄存器901、905和909以及组合逻辑电路903、907和911执行IC100的至少一个功能。DQOUT可提供给芯片上的另一器件,或者可以经由相应的IC引脚或类似方式将其提供给外部器件。如本领域普通技术人员所理解的,在CLK的每一个周期期间,每一个组合逻辑电路903、907和911可合并组合逻辑、以及可扫描快速动态寄存器901、905和909来贮存所述电路的状态。During normal operation, SE is pulled low to effectively disable the SI input of the scannable fast dynamic registers 901 , 905 and 909 . DNIN can be generated on IC 100, or provided from an external source via a corresponding IC pin or similar. During normal operation, registers 901 , 905 and 909 and combinational logic circuits 903 , 907 and 911 perform at least one function of IC 100 . DQOUT may be provided to another device on the chip, or it may be provided to an external device via a corresponding IC pin or similar. As will be appreciated by those of ordinary skill in the art, during each cycle of CLK, each combinational logic circuit 903, 907, and 911 may incorporate combinational logic, and may scan fast dynamic registers 901, 905, and 909 to store the circuit's state.

扫描能力可提供用于检测目的以在功能上检测IC100的操作。在扫描模式期间,将SE设置为高电位以有效地禁止数据输入DN,并且使能每一个可扫描快速动态寄存器901、905和909的每一个SI输入。在此方式中,在扫描模式期间,以SCANIN和SCANOUT之间的串行菊花链接方式可扫描快速动态寄存器901、905和909。经由SCANIN输入提供测试向量或类似数据且经由CLK提供时钟,以使用测试向量值加载到可扫描快速动态寄存器901、905和909。依据特定测试功能,可将SE暂时拉到低电位并且IC100操作一个或更多CLK周期。然后在CLK的后续周期期间将SE拉到高电位,并且经由SCANOUT输出被存储在可扫描快速动态寄存器901、905和909中的信息,然后检查所述的输出测试向量以确认测试结果。A scanning capability may be provided for detection purposes to functionally detect the operation of IC 100 . During scan mode, setting SE high effectively disables the data input DN and enables each SI input of each scannable fast dynamic register 901 , 905 and 909 . In this manner, the fast dynamic registers 901, 905 and 909 may be scanned in a serial daisy chain between SCANIN and SCANOUT during scan mode. Test vectors or similar data are provided via the SCANIN input and clocked via CLK to load the scannable fast dynamic registers 901, 905 and 909 with the test vector values. Depending on the specific test function, SE may be temporarily pulled low and IC 100 operated for one or more CLK cycles. SE is then pulled high during the subsequent cycle of CLK, and the information stored in the scannable fast dynamic registers 901, 905 and 909 is output via SCANOUT, and the output test vectors are then checked to confirm the test results.

可扫描快速动态寄存器700的配置的至少一个好处是,到输出的扫描数据的路径是静态的,并且部分地旁路寄存器的动态特性以使能扫描输入数据的注入。重要的好处是,在保留针对非扫描操作的最初高速特性的同时,将扫描电路与动态电路的相互影响降到最低。这里所绘示和描述的快速寄存器结合了反相一个或更多数据输入DN以寄存单个输出QB的简单功能。许多更复杂功能的其它逻辑功能可内置到快速寄存器中,而本说明书所揭露的扫描注入方法可以类似方式并入于具备更复杂功能的其它寄存器中。At least one benefit of the scannable fast dynamic register 700 configuration is that the path of the scan data to the output is static and partially bypasses the dynamic nature of the register to enable injection of scan input data. An important benefit is to minimize the interaction of scanning circuits with dynamic circuits while retaining the original high-speed characteristics for non-scanning operations. The flash registers shown and described herein combine the simple function of inverting one or more data inputs DN to register a single output QB. Many other logic functions of more complex functions can be built into fast registers, and the scan injection method disclosed in this specification can be similarly incorporated into other registers with more complex functions.

尽管本发明已透过参照某些实施例做相当详细地描述,但其它实施例和变形是可能的并且被仔细考虑的。例如,可以以包括逻辑器件或电路等的任何适当方式实现这里所描述的电路、可以在集成器件内部的软件或固件中实现针对逻辑电路所描述的任何数量的功能。本领域技术人员应知,在不脱离本发明精神和范围的情况下,他们能够很容易地使用被公开的概念和特定实施例为基础来作为设计或修改并执行与本发明具相同目的的其它结构,但这些等效修饰都应包含在本发明专利范围中。Although the invention has been described in some detail with reference to certain embodiments, other embodiments and variations are possible and contemplated. For example, circuits described herein may be implemented in any suitable manner including logic devices or circuits, etc., and any number of functions described for logic circuits may be implemented in software or firmware within an integrated device. Those skilled in the art should appreciate that they can readily use the disclosed conception and specific embodiments as a basis for designing or modifying other embodiments for carrying out the same purposes of the present invention without departing from the spirit and scope of the present invention. structure, but these equivalent modifications should be included in the patent scope of the present invention.

Claims (38)

1. a quick dynamic register, comprising:
Data block, is coupled between the first precharge node and electric discharge node, wherein, and when clock node is from the first clock statusWhile being transformed into second clock state, described data block receives at least one data input and passes through described the first precharge jointPoint is moved described electric discharge node to assess;
Pre-charge circuit, when described clock node is during in described the first clock status, by the second precharge node and describedOne precharge node is both pre-charged to high potential, in the time that described clock node is transformed into described second clock state, stopsThe first precharge node and move described electric discharge node to electronegative potential described in precharge, and when described the first precharge nodeKeep high potential after described clock node is transformed into described second clock state time, by described the second precharge node electric dischargeTo electronegative potential;
Transparent latch, has and is couple to the latch input of described the second precharge node and is coupled to memory nodeOutput, wherein, when described clock node is during in described second clock state, described transparent latch is for by described secondThe state transfer of precharge node is transparent to described memory node, and wherein when described clock node is in described firstWhen clock status, memory node described in described transparent latch latch; And
Output logic gate, the state-driven output node based on described the second precharge node and described memory node is to a shapeState.
2. quick dynamic register as claimed in claim 1, further comprises multiple inverter buffers, is coupled in institute by serialState between the described latch input of the second precharge node and described transparent latch.
3. quick dynamic register circuit as claimed in claim 1, further comprises:
Phase inverter, has the input that is couple to described clock node and the output that is couple to inversion clock node; And
Wherein, described transparent latch comprises:
The first and second transistors, each has and is coupled between described latch input and described latch outputA pair of current terminal, wherein, described the first transistor has the control input end that is couple to described clock node, and wherein,Described transistor seconds has the control input end that is couple to described inversion clock node; And
Retainer circuit, is couple to described clock node, described inversion clock node and the output of described latch, when describedClock node is in the time of described the first clock status, and retainer circuit operation is to maintain the state of described output node.
4. quick dynamic register as claimed in claim 3, wherein, described retainer circuit comprises:
The 3rd transistor, has the first current terminal that is couple to supply voltage node, and have the second current terminal andControl terminal;
The 4th transistor, has the first current terminal that is couple to described the 3rd transistorized described the second current terminal, hasBe couple to the second current terminal of described latch output, and there is the control terminal that is couple to described clock node;
The 5th transistor, has the first current terminal that is couple to described latch output, has the second current terminal, andThere is the control terminal that is couple to described inversion clock node;
The 6th transistor, has the first current terminal that is couple to described the 5th transistorized described the second current terminal, hasBe couple to the second current terminal of lower supply voltage node, and there is control terminal; And
Phase inverter, has the input that is couple to described latch output, and is couple to the described the 3rd and the 6th transistorThe output of described control terminal.
5. quick dynamic register as claimed in claim 1, wherein, described data block comprises multiple N channel transistors, eachIndividual have the first current terminal that is couple to described the first precharge node, and each has and is couple to described precharge nodeThe second current terminal, and each has one of the corresponding control terminal that receives the input of multiple data.
6. quick dynamic register as claimed in claim 1, wherein, described data block comprises multiple N channel transistors, eachIndividual have serial and be coupled in a pair of current terminal between described the first precharge node and described electric discharge node, and eachThere is one of the corresponding control terminal that receives the input of multiple data.
7. quick dynamic register as claimed in claim 1, wherein, described pre-charge circuit comprises:
The first p channel transistor, has the first current terminal that is couple to supply voltage node, has and is couple to described firstThe second current terminal of precharge node, and there is the control terminal that is couple to described clock node;
The one N channel transistor, has the first current terminal that is couple to described electric discharge node, has and is couple to lower supply voltageThe second current terminal of node, and there is the control terminal that is couple to described clock node; And
Retainer circuit, is coupled between described upper supply voltage node and lower supply voltage node, and is further couple toDescribed the first precharge node and described clock node, wherein, when described clock node is during in described second clock state, instituteState retainer circuit operation to maintain the state of described the first precharge node.
8. quick dynamic register as claimed in claim 1, wherein, described pre-charge circuit comprises:
The first p channel transistor, has the first current terminal that is couple to supply voltage node, has and is couple to described secondThe second current terminal of precharge node, and there is the control terminal that is couple to described clock node;
The one N channel transistor, has the first current terminal that is couple to described the second precharge node, has the second current terminalSon, and there is the control terminal that is couple to described the first precharge node;
Phase inverter, has and is couple to the input of described clock node and is couple to described the of a described N channel transistorThe output of two current terminals; And
Retainer circuit, is coupled between described supply voltage node and lower supply voltage node, and is further couple to instituteState the first and second precharge nodes and described clock node, wherein, be transformed into described second clock shape at described clock nodeAfter state, described retainer circuit operation is to change the state of described the second precharge node to the phase of described the first precharge nodeOpposite state.
9. quick dynamic register as claimed in claim 1, wherein, described output logic gate comprises logic AND type logicDoor.
10. quick dynamic register circuit as claimed in claim 1, further comprises:
Scan enable piece, is coupled between described the first precharge node and described electric discharge node, wherein, and described scan enable pieceThe input of reception scan enable, and when described scan enable input being set and working as described clock node from described the first clock statusWhile being transformed into described second clock state, move described the first precharge node to described electric discharge node;
Select circuit, be inserted between the described input of described the second precharge node and described transparent latch, wherein, instituteState and select circuit to there is the first input end that is couple to described the second precharge node, have and be couple to the of scan-data nodeTwo inputs, and there is the output of the described latch input that is couple to described transparent latch; And
The second transparent latch, has the input that receives scan-data input and the output that is couple to described scan-data nodeEnd, wherein, when described clock node is in described the first clock status and in the time described scan enable is set inputs, described theIt is transparent that two transparent latch are input to described scan-data node for the described scan-data of transmission, wherein, and when cancellation is establishedPut the input of described scan enable and when described clock node is during in described the first clock status, described the second transparent latchForcing described scan-data node is high potential, and wherein, when described clock node is during in described second clock state, and instituteState the final state that the second transparent latch keeps described scan-data node.
11. 1 kinds of integrated circuits, comprising:
Combinational logic, provides at least one data input;
Clock node; And
Dynamic register fast, comprising:
Data block, is coupled between the first precharge node and electric discharge node, wherein, described data block receive described at least oneData input, and in the time that described clock node is transformed into second clock state from the first clock status, by by described firstPrecharge node is moved described electric discharge node to and is assessed;
Pre-charge circuit, when described clock node is during in described the first clock status, by the second precharge node and describedBoth are precharged as high potential one precharge node, in the time that described clock node is transformed into described second clock state, stop pre-Charge described the first precharge node and move described electric discharge node to electronegative potential, and when being transformed at described clock nodeAfter described second clock state and when described the first precharge node keeps high potential, by described the second precharge node electric dischargeFor electronegative potential;
Transparent latch, has the latch input that is couple to described the second precharge node and the output that couples memory nodeEnd, wherein, when described clock node is during in described second clock state, described transparent latch is described second pre-for transmittingThe state of charge node is transparent to described memory node, and wherein, when described clock node is in described the first clockWhen state, memory node described in described transparent latch latch; And
Output logic gate, the state-driven output node based on described the second precharge node and described memory node is to a shapeState.
12. integrated circuits as claimed in claim 11, further comprise multiple inverter buffers, and serial is coupled in described secondBetween the described latch input of precharge node and described transparent latch.
13. integrated circuits as claimed in claim 11, further comprise:
Phase inverter, has the input that is coupled in described clock node and the output that is coupled in inversion clock node; And
Wherein, described transparent latch comprises:
The first and second transistors, each has and is coupled between described latch input and described latch outputA pair of current terminal, wherein, described the first transistor has the control input end that is couple to described clock node, and wherein,Described transistor seconds has the control input end that is couple to described inversion clock node; And
Retainer circuit, is couple to described clock node, described inversion clock node and described latch output, when describedClock node is in the time of described the first clock status, and retainer circuit operation is to maintain the state of described output node.
14. integrated circuits as claimed in claim 13, wherein, described retainer circuit comprises:
The 3rd transistor, has the first current terminal that is couple to supply voltage node, and have the second current terminal andControl terminal;
The 4th transistor, has the first current terminal that is couple to described the 3rd transistorized described the second current terminal, hasBe couple to the second current terminal of described latch output, and there is the control terminal that is couple to described clock node;
The 5th transistor, has the first current terminal that is couple to described latch output, has the second current terminal, and toolThere is the control terminal that is couple to described inversion clock node;
The 6th transistor, has the first current terminal that is couple to described the 5th transistorized described the second current terminal, hasBe couple to the second current terminal of lower supply voltage node, and there is control terminal; And
Phase inverter, have be couple to the input of described latch output and be couple to the described the 3rd and the 6th transistorized described inThe output of control terminal.
15. integrated circuits as claimed in claim 11, wherein, described pre-charge circuit comprises:
The first p channel transistor, has the first current terminal that is couple to supply voltage node, has and is couple to described firstThe second current terminal of precharge node, and there is the control terminal that is couple to described clock node;
The one N channel transistor, has the first current terminal that is couple to described electric discharge node, has and is couple to lower supply voltageThe second current terminal of node, and there is the control terminal that is couple to described clock node; And
Retainer circuit, is coupled between described upper supply voltage node and lower supply voltage node, and is further couple toDescribed the first precharge node and described clock node, wherein, when described clock node is during in described second clock state, instituteState retainer circuit operation to maintain the state of described the first precharge node.
16. integrated circuits as claimed in claim 11, wherein, described pre-charge circuit comprises:
The first p channel transistor, has the first current terminal that is couple to supply voltage node, has and is couple to described secondThe second current terminal of precharge node, and there is the control terminal that is couple to described clock node;
The one N channel transistor, has the first current terminal that is couple to described the second precharge node, has the second current terminalSon, and there is the control terminal that is couple to described the first precharge node;
Phase inverter, has and is couple to the input of described clock node and is couple to described the of a described N channel transistorThe output of two current terminals; And
Retainer circuit, is coupled between described supply voltage node and lower supply voltage node, and is further couple to instituteState the first and second precharge nodes and described clock node, wherein, be transformed into described second clock shape at described clock nodeAfter state, described retainer circuit operation is to change the state of described the second precharge node to the phase of described the first precharge nodeOpposite state.
Deposit the method for data, comprising for 17. 1 kinds:
When clock signal is during in the first clock status, precharge the first precharge node is high potential;
In the time that at least one data input is not assessed, be transformed into after second clock state, at least one in clock signalData inputs is assessed and maintained described the first precharge node is high potential, and is transformed into the when described clock signalTwo clock status and in the time that the input of at least one data is assessed are electronegative potential by the first precharge node electric discharge;
When clock signal is during in the first clock status, the second precharge node is precharged as to high potential;
Be transformed into after the second logic state in clock signal, if the first precharge node keeps high potential, by the second preliminary fillingElectrical nodes electric discharge, for electronegative potential, is high potential otherwise maintain the second precharge node;
When clock signal is during in the first clock status, the state of latch stores node, when clock signal is in second clock shapeWhen state, by the state transfer of the second precharge node to memory node; And
The state of output node is set according to the state of the second precharge node and memory node.
18. methods as claimed in claim 17, wherein, the state of described transmission the second precharge node is to memory node bagDraw together:
Inversion clock signal and the clock signal being inverted is provided;
Conducting is coupled between the second precharge node and memory node, by the first transmission transistor of clock signal control;
Conducting is coupled between the second precharge node and memory node, be inverted second of clock signal control transmits crystalPipe; And
When clock signal is during in the first clock status, keep the state of memory node.
19. methods as claimed in claim 17, further comprise:
The input of reception scan enable
In the time that scan enable input is set and in the time that clock signal is transformed into second clock state, by forcing the first precharge jointPoint discharges into electronegative potential and carrys out bypass data assessment; And
In the time that scan enable input is set, inject the state that scan-data input replaces the second precharge node, wherein, work as clockSignal is in the time of second clock state, and described transmit mode comprises the state transfer of scan-data input to memory node.
20. 1 kinds can scan quick dynamic register, comprise:
Data and scan enable circuit, be coupled between the first precharge node and electric discharge node, and receive at least one numberAccording to input and scan enable input, wherein, in the time that clock node is transformed into second clock state from the first clock status, and work asDescribed data block is assessed or in the time that the input of described scan enable is set, and described data and scan enable circuit are by described theOne precharge node is moved described electric discharge node to, otherwise does not move described the first precharge node to described electric discharge node;
Pre-charge circuit, when described clock node is during in described the first clock status, by the second precharge node and describedOne precharge node is all charged to high potential in advance, in the time that described clock node is transformed into described second clock state, stops prechargeDescribed the first precharge node and move described electric discharge node to electronegative potential, and described clock node is transformed into described secondAfter clock status, in the time that described the first precharge node keeps high potential, described the second precharge node is discharged into electronegative potential;
Select circuit, there is the first input end that is coupled to described the second precharge node, there is the scan-data of being couple to jointThe second input of point, and there is selecteed output;
Memory circuit, has the storage input that receives described selected output, and has the output that is couple to memory nodeEnd, wherein, when described clock node is during in described second clock state, described memory circuit is by the shape of described selected outputState is delivered to described memory node, and wherein, when described clock node is during in described the first clock status, and described store electricityRoad keeps the final state of described memory node;
Scan enable circuit, is included in data and scan enable circuit, in the time that the input of described scan enable is set and work as instituteState clock node in the time of described the first clock status, the state transfer of scanning input is arrived to described scan-data node, when gettingDisappear when described scan enable signals is set and when described clock node is during in described the first clock status, force described scanningBack end is to high potential, and when described clock node is during in described second clock state, keeps described scan-data jointThe final state of point; And
Output logic gate, the state-driven output node of described the second precharge node of foundation and described memory node is to a shapeState.
21. as claimed in claim 20ly scan quick dynamic register, wherein, and described data and scan enable circuit bagDraw together:
Data block, is coupled between described the first precharge node and described electric discharge node, and receives described at least one numberAccording to input; And
Scan enable circuit, is coupled between described the first precharge node and described electric discharge node, and receives described scanningEnable input.
22. as claimed in claim 21ly scan quick dynamic register, and wherein, described scan enable circuit comprises at least oneIndividual N channel transistor, has the first current terminal that is couple to described the first precharge node, has and is couple to described electric discharge jointThe second current terminal of point, and there is the control inputs that receives described scan enable input.
23. as claimed in claim 21ly scan quick dynamic register, and wherein, described data block comprises multiple N raceway groove crystalline substancesBody pipe, its each controlled by one of corresponding multiple data inputs, and be couple to together to carry out logic of propositions meritEnergy.
24. as claimed in claim 20ly scan quick dynamic register, and wherein, described selection circuit comprises that AND type patrolsCollect door.
25. as claimed in claim 20ly scan quick dynamic register, and wherein, described memory circuit comprises transparent latchDevice, has and receives the latch input of described selection output and have the latch output that is couple to described memory nodeEnd.
26. as claimed in claim 25ly scan quick dynamic register, further comprise:
Phase inverter, has the input that is couple to described clock node and the output that is couple to inversion clock node; And
Wherein, described transparent latch comprises the first and second transistors, its each have and be coupled in described latch inputA pair of current terminal between end and described latch output, wherein, described the first transistor has and is couple to described clockThe control inputs of node, and wherein, described transistor seconds has the control inputs that is couple to described inversion clock node.
27. as claimed in claim 20ly scan quick dynamic register, and wherein, described scan enable circuit comprises:
Scan enable logic, has the first input end that receives the input of described scan enable, has and receives described scanning inputThe second input, and there is output; And
The second memory circuit, has the storage input of the described output that is couple to described scan enable logic and has and coupleTo the output of described scan-data node, wherein, when described clock node is during in described the first clock status, described secondMemory circuit by the state transfer of described scanning input to described scan-data node, and wherein when described clock node inWhen described second clock state, described the second memory circuit keeps the final state of described scan-data node.
28. as claimed in claim 27ly scan quick dynamic register, and wherein, described the second memory circuit comprises transparent lockStorage, has the latch input of the described output that is couple to described scan enable logic and has and be couple to described scanningThe latch output of back end.
29. as claimed in claim 28ly scan quick dynamic register, further comprise:
Phase inverter, has the input that is couple to described clock node and the output that is couple to inversion clock node; And
Wherein, described transparent latch comprises the first and second transistors, its each have and be coupled in described latch inputA pair of current terminal between end and described latch output, wherein, described the first transistor has and is couple to described clockThe control input end of node, and wherein said transistor seconds has the control inputs that is couple to described inversion clock nodeEnd.
30. 1 kinds of integrated circuits, comprising:
Clock node and scan enable node, wherein, described scan enable node receives the scan enable letter of beacon scanning patternNumber; And
At least one can scan quick dynamic latch, and each comprises:
Data and scan enable circuit, be coupled between the first precharge node and electric discharge node, and receive at least one numberAccording to input and the scan enable input with the described scan enable signals of reception, wherein, when described clock node is from firstWhen clock status is transformed into second clock state, or in the time of described data block assignment or when described scan enable signals is setTime, described data and scan enable circuit are moved described the first precharge node to described electric discharge node, otherwise not by describedOne precharge node is moved described electric discharge node to;
Pre-charge circuit, when described clock node is during in described the first clock status, by the second precharge node and describedOne precharge node is both charged to high potential in advance, in the time that described clock node is transformed into described second clock state, stops pre-Charge described the first precharge node and move described electric discharge node to electronegative potential, and be transformed into institute at described clock nodeState after second clock state, while only having described the first precharge node to keep high potential, by described the second precharge node electric dischargeTo electronegative potential;
Select circuit, there is the first input end that is couple to described the second precharge node, there is the scan-data of being couple to nodeThe second input, and there is selecteed output;
Memory circuit, has and receives the storage input of described selected output and have the output that is couple to memory node,Wherein, when described clock node is during in described second clock state, described memory circuit is by the state of described selected outputBe delivered to described memory node, and wherein, when described clock node is during in described the first clock status, described memory circuitKeep the final state of described memory node;
Scan enable circuit, is included in data and scan enable circuit, when arrange the input of described scan enable and when described inClock node, in the time of described the first clock status, to described scan-data node, is worked as cancellation by the state transfer of scanning inputDescribed scan enable signals is set and when described clock node is during in described the first clock status, forces described scan-dataNode is to high potential, and when described clock node is during in described second clock state, keeps described scan-data nodeFinal state; And
Output logic gate, the state-driven output node based on described the second precharge node and described memory node is to a shapeState.
31. integrated circuits as claimed in claim 30, further comprise:
Scanning input node and scanning output node;
Wherein, described at least one can scan quick dynamic register and comprise multiple quick dynamic registers that scan;
Wherein, described multiple first scanning that can scan quick dynamic register that scans quick dynamic register is inputtedEnd is couple to described scanning input node;
The scanning that wherein, described multiple last that scan quick dynamic register can be scanned to quick dynamic register is defeatedEnter end and be couple to described multiple previous output node that scans quick dynamic register that scans quick dynamic register;And
Wherein, by described multiple scan quick dynamic register described last can scan the defeated of quick dynamic registerEgress is couple to described scanning output node.
32. integrated circuits as claimed in claim 31, further comprise at least one combined logic block, each combinational logicPiece has and is couple to described multiple previous output joint that scans quick dynamic register that scans quick dynamic registerThe input of point, and each combined logic block has and is couple to described multiple next one that scans quick dynamic registerCan scan more corresponding data of at least one data input pin that scans quick dynamic register of quick dynamic registerAt least one output of input.
33. integrated circuits as claimed in claim 30, wherein, described data and scan enable circuit comprise scan enable electricityRoad, scan enable circuit is coupled between described the first precharge node and described electric discharge node, and is couple to described scanningEnable node.
34. integrated circuits as claimed in claim 33, wherein, described scan enable circuit comprises at least one N raceway groove crystalPipe, at least one N channel transistor has the first current terminal that is couple to described the first precharge node, has the institute of being couple toState the second current terminal of electric discharge node, and there is the control input end that is couple to described scan enable node.
35. integrated circuits as claimed in claim 30, wherein, described selection circuit comprises AND type gate.
36. integrated circuits as claimed in claim 30, wherein, described scan enable circuit comprises:
Scan enable logic, has the first input end that is couple to described scan enable node, has and receives described scanning inputThe second input, and there is output; And
The second memory circuit, the storage input with the described output that is couple to described scan enable logic is couple to havingThe output of described scan-data node, wherein, when described clock node is during in described the first clock status, described second depositsAccumulate road by the state transfer of described scanning input to described scan-data node, and wherein, when described clock node inWhen described second clock state, described the second memory circuit keeps the final state of described scan-data node.
37. integrated circuits as claimed in claim 36, wherein, described the second memory circuit comprises transparent latch, transparent lockStorage has the latch input of the described output that is couple to described scan enable logic, and has and be couple to described scanningThe latch output of back end.
38. integrated circuits as claimed in claim 37, further comprise:
Phase inverter, has the input that is couple to described clock node and the output that is couple to inversion clock node; And
Wherein, described transparent latch comprises the first transistor and transistor seconds, the first transistor and transistor seconds everyOne has a pair of current terminal being coupled between described latch input and described latch output, wherein, described inThe first transistor has the control input end that is couple to described clock node, and wherein said transistor seconds has and is couple toThe control input end of described inversion clock node.
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US13/951,295 US8928377B2 (en) 2013-04-24 2013-07-25 Scannable fast dynamic register
US13/951,295 2013-07-25
US13/951,306 US8860463B1 (en) 2013-04-24 2013-07-25 Fast dynamic register with transparent latch

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