CN103686533B - System and method for transmitting a radio frequency signal through a speaker coil - Google Patents
System and method for transmitting a radio frequency signal through a speaker coil Download PDFInfo
- Publication number
- CN103686533B CN103686533B CN201310401764.7A CN201310401764A CN103686533B CN 103686533 B CN103686533 B CN 103686533B CN 201310401764 A CN201310401764 A CN 201310401764A CN 103686533 B CN103686533 B CN 103686533B
- Authority
- CN
- China
- Prior art keywords
- coupled
- amplifier
- speaker coil
- parallel resonant
- port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
- H03F3/187—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/537—A transformer being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21157—A filter circuit being added at the output of a power amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21169—A parallel resonance circuit being coupled at the output of a power amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45712—Indexing scheme relating to differential amplifiers the LC comprising a capacitor as shunt
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R3/00—Circuits for transducers, loudspeakers or microphones
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Amplifiers (AREA)
Abstract
用于通过扬声器线圈发射射频信号的系统和方法。根据实施例,一种系统具有配置为通过并联谐振电路耦合到扬声器线圈端口的音频放大器,以及配置为以第一RF发射频率发射RF信号的射频(RF)放大器。所述扬声器线圈端口被配置为耦合到扬声器线圈,并且所述并联谐振电路具有大约为第一RF发射频率的谐振频率。
Systems and methods for transmitting radio frequency signals through speaker coils. According to an embodiment, a system has an audio amplifier configured to be coupled to a speaker coil port through a parallel resonant circuit, and a radio frequency (RF) amplifier configured to transmit RF signals at a first RF transmit frequency. The speaker coil port is configured to couple to a speaker coil, and the parallel resonant circuit has a resonant frequency at about a first RF transmit frequency.
Description
技术领域technical field
本发明总体上涉及半导体电路和方法,并且更具体地涉及用于通过扬声器线圈发射射频信号的系统和方法。The present invention relates generally to semiconductor circuits and methods, and more particularly to systems and methods for transmitting radio frequency signals through speaker coils.
背景技术Background technique
由于其电特性与铁氧体棒形天线的电特性相似,扬声器线圈可被用作用于射频(RF)发射装置的天线,以及用于在音频频率的扩音器的机电驱动器。在例如移动电话,数字音频装置,头戴式耳机和助听器等成本敏感的便携装置中,在不占用大量额外实际空间的情况下可添加RF功能以及声学功能。例如,在移动电话内将RF功能加入到扬声器线圈可以使得近场通信能够用于金融交易或者用于在用户之间交换数据。对于助听器,RF功能的加入可允许助听器被远程控制或者编程,并且可以使得双耳助听器对能够交换数据以使用音频信号处理算法改善音频信号的方向性。Because of its electrical properties similar to those of ferrite rod antennas, speaker coils can be used as antennas for radio frequency (RF) transmitting devices, as well as electromechanical drivers for loudspeakers at audio frequencies. In cost-sensitive portable devices such as mobile phones, digital audio devices, headphones and hearing aids, RF functionality as well as acoustic functionality can be added without taking up a lot of additional physical space. For example, adding RF functionality to a speaker coil within a mobile phone could enable near-field communication for financial transactions or for exchanging data between users. For hearing aids, the addition of RF functionality may allow hearing aids to be controlled or programmed remotely, and may enable binaural hearing aid pairs to exchange data to improve the directionality of audio signals using audio signal processing algorithms.
在一些系统中,可以通过与扬声器线圈并联地将音频和RF功率放大器耦合来实现组合的声学和RF发射系统。虽然所述RF功率放大器可以使用AC耦合电容器来防止对音频信号的干扰,但是这种相对于音频放大器的AC耦合可呈现容性阻抗,其反射由所述RF功率放大器产生的RF信号。在一些系统中,这种反射可通过使用有损耗的高通和低通滤波器网络来被处理,所述有损耗的高通和低通滤波器网络可能对所述音频信号引起损耗和衰减。在一些情况下,这些损耗是由于在用于100kHz直到30MHz范围中的RF频率的滤波器电感器中的损耗引起的。具有非常小的形状因子的电感器(例如通常用在便携装置中的电感器)可能是特别地有损耗的。在其它系统中,RF放大器和声学放大器可通过机械继电器被耦合到扬声器线圈。In some systems, a combined acoustic and RF transmission system can be achieved by coupling audio and RF power amplifiers in parallel with the speaker coils. While the RF power amplifier may use an AC coupling capacitor to prevent interference with the audio signal, this AC coupling relative to the audio amplifier may present a capacitive impedance that reflects the RF signal generated by the RF power amplifier. In some systems, such reflections may be handled by using lossy high-pass and low-pass filter networks that may cause loss and attenuation to the audio signal. In some cases, these losses are due to losses in the filter inductors for RF frequencies in the range of 100 kHz up to 30 MHz. Inductors with very small form factors, such as those commonly used in portable devices, can be particularly lossy. In other systems, the RF amplifier and the acoustic amplifier may be coupled to the speaker coil through mechanical relays.
发明内容Contents of the invention
根据实施例,一种系统具有音频放大器和RF放大器,所述音频放大器被配置为通过并联谐振电路耦合到扬声器线圈端口,所述RF放大器被配置为以第一RF发射频率发射RF信号。所述扬声器线圈端口被配置为耦合到扬声器线圈,并且所述并联谐振电路具有大约为所述第一RF发射频率的谐振频率。According to an embodiment, a system has an audio amplifier configured to be coupled to a speaker coil port through a parallel resonant circuit, and an RF amplifier configured to transmit an RF signal at a first RF transmission frequency. The speaker coil port is configured to couple to a speaker coil, and the parallel resonant circuit has a resonant frequency at about the first RF transmit frequency.
本发明的一个或多个实施例的细节在下面的附图和描述中被阐述。本发明的其它特征,主题,和优点将由该描述和附图以及由权利要求变得明显。The details of one or more embodiments of the invention are set forth in the accompanying drawings and the description below. Other features, subjects, and advantages of the invention will be apparent from the description and drawings, and from the claims.
附图说明Description of drawings
为了对本发明以及其优点的更加完整的理解,现在参照下面结合附图进行的描述,在附图中:For a more complete understanding of the invention and its advantages, reference is now made to the following description taken in conjunction with the accompanying drawings, in which:
图1示出实施例系统的原理图,其中RF放大器通过磁性变压器耦合到扩音器;Figure 1 shows a schematic diagram of an embodiment system where an RF amplifier is coupled to a loudspeaker through a magnetic transformer;
图2示出实施例系统的原理图,其中RF放大器通过平衡不平衡变压器(baluntransformer)耦合到扩音器;Figure 2 shows a schematic diagram of an embodiment system in which an RF amplifier is coupled to a loudspeaker through a balun transformer;
图3示出实施例系统的原理图,其中音频放大器通过具有旁路开关的谐振电路耦合到并联的扩音器;Figure 3 shows a schematic diagram of an embodiment system in which an audio amplifier is coupled to parallel loudspeakers through a resonant circuit with a bypass switch;
图4示出实施例系统的原理图,其中音频放大器通过可调谐并联谐振电路耦合到扩音器;并且Figure 4 shows a schematic diagram of an embodiment system in which an audio amplifier is coupled to a loudspeaker through a tunable parallel resonant circuit; and
图5示出另一实施例系统的原理图,其中音频放大器通过可调谐并联谐振电路耦合到扩音器。Figure 5 shows a schematic diagram of another embodiment system in which an audio amplifier is coupled to a loudspeaker through a tunable parallel resonant circuit.
除非另外表明,在不同附图中的相应数字和符号一般指代相应部件。附图被绘制以清楚说明优选实施例的相关方面并且不必要按比例绘制。为了更清楚地说明特定实施例,表示相同结构、材料或者工艺步骤的变型的字母可跟随在图号之后。Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate relevant aspects of the preferred embodiments and are not necessarily drawn to scale. Letters denoting variations of the same structure, material, or process step may follow the figure number in order to more clearly illustrate a particular embodiment.
具体实施方式detailed description
当前优选实施例的形成和使用在下面被详细地讨论。然而,应该领会到本发明提供了可在很多种特定情况下具体实施的许多适用的发明构思。被讨论的特定实施例仅仅是形成和使用本发明的特定方式的例证,并且不会限制本发明的范围。The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific situations. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.
本发明将关于在特定情况下的实施例被描述,即使用扬声器线圈的RF发射系统。本发明的实施例不局限于使用扬声器线圈的系统,而且可以被应用到其它电路类型。其它电路的实例包括,但不局限于有线线路和无线通信电路,以及使用多个发射放大器和/或信号发生器的电路。The invention will be described with respect to an embodiment in the specific case, namely an RF transmission system using a loudspeaker coil. Embodiments of the present invention are not limited to systems using speaker coils, but may be applied to other circuit types. Examples of other circuits include, but are not limited to, wireline and wireless communication circuits, and circuits using multiple transmit amplifiers and/or signal generators.
在实施例中,使用可包括一个或多个CMOS开关,电感器和电容器的低损耗匹配网络将音频放大器和RF放大器耦合到扬声器线圈。在一些实施例中,所述匹配网络可以是可调节的和/或可适应于补偿在扬声器线圈附近改变RF环境和/或补偿在制造中的变化。因此,一些实施例可以利用使用耦合到可切换电容器组的电感器来实现的可调谐滤波器,所述电容器组具有由一个或者多个高功率晶体管(例如RF CMOS晶体管或其它类型的晶体管)切换的一个或者多个电容器。在一些情况下,即使功率晶体管具有差的RF隔离或者即使与高功率晶体管的电阻或者所述和电容器的电阻相比电感器具有相对大的串联电阻,高效性能也被保持。In an embodiment, the audio amplifier and RF amplifier are coupled to the speaker coil using a low loss matching network which may include one or more CMOS switches, inductors and capacitors. In some embodiments, the matching network may be adjustable and/or adaptable to compensate for changing RF environments in the vicinity of the speaker coil and/or to compensate for variations in manufacturing. Accordingly, some embodiments may utilize a tunable filter implemented using an inductor coupled to a switchable capacitor bank with switching capability by one or more high-power transistors, such as RF CMOS transistors or other types of transistors. of one or more capacitors. In some cases, high efficiency performance is maintained even if the power transistor has poor RF isolation or even if the inductor has a relatively large series resistance compared to the resistance of the high power transistor or the sum capacitor.
图1示出实施例声学和RF发射系统100,其包括通过变压器110的次级绕组被耦合到扬声器线圈106的音频放大器102。RF放大器104通过变压器110被进一步耦合到扬声器线圈106,使得变压器110的初级绕组被耦合到RF放大器104。在实施例中,变压器110可被实现为具有对于RF和音频信号电流两者的总和被定大小的低阻抗的电流类型变压器。变压器的匝数比可被定大小以提供在扬声器线圈106和RF功率放大器104之间的最大功率匹配。因为变压器110提供AC隔离,所以需要用于所述RF功率放大器的附加的去耦合。FIG. 1 illustrates an embodiment acoustic and RF transmission system 100 that includes an audio amplifier 102 coupled to a speaker coil 106 through a secondary winding of a transformer 110 . RF amplifier 104 is further coupled to speaker coil 106 through transformer 110 such that the primary winding of transformer 110 is coupled to RF amplifier 104 . In an embodiment, the transformer 110 may be implemented as a current-type transformer having a low impedance sized for the sum of both the RF and audio signal currents. The turns ratio of the transformer may be sized to provide maximum power matching between speaker coil 106 and RF power amplifier 104 . Because transformer 110 provides AC isolation, additional decoupling for the RF power amplifier is required.
对于RF信号,电容器114和116提供到地的低阻抗路径。在一些实施例中,如果必要,电容器114和116可以使用耦合到变压器110的装置的现有寄生电容和/或附加的电容部件实现,以适当地使由RF放大器104产生的RF信号通过旁路。类似地,电容器108和112分别代表电压器110的初级绕组和次级绕组加上附加电容部件的寄生电容,所述附加电容部件可被用来将变压器的并联谐振频率调谐到大约为由RF放大器104产生的RF信号的发射频率。通过以并联谐振模式操作变压器110,可以使用与用于非谐振操作的那些变压器相比较小的变压器。在一些实施例中,变压器110,RF放大器104,和音频放大器102可被实现在相同的集成电路上。可替代地,这些部件或者这些部件的组合可以使用以不同方式被划分的多个集成电路和/或板级部件来实现。For RF signals, capacitors 114 and 116 provide a low impedance path to ground. In some embodiments, capacitors 114 and 116 may be implemented using existing parasitic capacitance of devices coupled to transformer 110 and/or additional capacitive components, if necessary, to properly bypass the RF signal generated by RF amplifier 104 . Similarly, capacitors 108 and 112 represent the parasitic capacitances of the primary and secondary windings, respectively, of voltage transformer 110 plus additional capacitive components that can be used to tune the parallel resonant frequency of the transformer to approximately 104 to generate the transmit frequency of the RF signal. By operating transformer 110 in parallel resonant mode, smaller transformers can be used compared to those used for non-resonant operation. In some embodiments, transformer 110, RF amplifier 104, and audio amplifier 102 may be implemented on the same integrated circuit. Alternatively, these components or a combination of these components may be implemented using multiple integrated circuits and/or board level components that are partitioned in different ways.
在实施例中,变压器110可以被配置为在低频具有0.98或者更大的耦合系数。可替代地,根据特定的系统及其规格,可以使用其它耦合系数。在一些实施例中,变压器110可以具有在变压器104的初级和次级侧之间的1:1匝数比。在一些实施例中,变压器110可以使用铁氧体芯变压器(例如,每侧使用从大约5个绕组到大约7个绕组)实现。可替代地,根据特定实施例及其规格,可以使用其它匝数比和/或其它变压器类型。In an embodiment, the transformer 110 may be configured to have a coupling coefficient of 0.98 or greater at low frequencies. Alternatively, other coupling coefficients may be used depending on the particular system and its specifications. In some embodiments, transformer 110 may have a 1:1 turns ratio between the primary and secondary sides of transformer 104 . In some embodiments, transformer 110 may be implemented using a ferrite core transformer (eg, using from about 5 windings to about 7 windings per side). Alternatively, other turns ratios and/or other transformer types may be used depending on the particular embodiment and its specifications.
RF放大器104可以被配置为以在大约100kHz和大约30MHz之间的频率发射RF信号,然而,可以使用这个范围以外的频率。例如,在其中使用13MHz发射频率的实施例中,由于变压器110的电感以及电容器108和112的组合引起的并联谐振也可被调谐到13MHz的RF频率。在一些实施例中,RF放大器104可被实现为给扬声器线圈106提供例如100mW或更低功率的单端放大器。RF放大器104可以替代地提供比100mW更高的功率和/或可以被实现为差分放大器。RF amplifier 104 may be configured to transmit RF signals at frequencies between about 100 kHz and about 30 MHz, however, frequencies outside this range may be used. For example, in an embodiment where a 13 MHz transmit frequency is used, the parallel resonance due to the inductance of transformer 110 and the combination of capacitors 108 and 112 may also be tuned to an RF frequency of 13 MHz. In some embodiments, RF amplifier 104 may be implemented as a single-ended amplifier providing, for example, 100 mW or less of power to speaker coil 106 . RF amplifier 104 may alternatively provide higher power than 100 mW and/or may be implemented as a differential amplifier.
在实施例中,音频放大器102可以使用D类放大器实现,所述D类放大器具有例如由脉宽调制输出级(未示出)驱动的桥型输出级。在一些实施例中,低通滤波器101可被耦合在音频放大器102和变压器110之间,以便对驱动音频放大器102的脉宽调制信号的切换频率滤波。低通滤波器101可被用来例如对辐射发射滤波,以便符合各种政府委员会要求。可替代地,可以省略低通滤波器101。In an embodiment, the audio amplifier 102 may be implemented using a class D amplifier having, for example, a bridge-type output stage driven by a pulse width modulated output stage (not shown). In some embodiments, a low pass filter 101 may be coupled between the audio amplifier 102 and the transformer 110 to filter the switching frequency of the pulse width modulated signal driving the audio amplifier 102 . Low pass filter 101 may be used, for example, to filter radiated emissions to comply with various government board requirements. Alternatively, the low-pass filter 101 may be omitted.
图2示出根据本发明的另一实施例的系统120。系统120与图1中所示的系统100相似,除了将RF放大器104耦合到电路的其余部分的变压器是使用电磁变压器或平衡不平衡变压器122代替DC隔离变压器110来实现的之外。在一些实施例中,使用电磁类型变压器代替磁性变压器可以产生更加紧凑的电路,尤其是对于具有较大带宽的RF信号。在一些实施例中,变压器122可以使用两个变压器以如所示的Guanella拓扑结构来实现。可替代地,其它电磁变压器类型或者拓扑结构可以是例如,但不局限于可以使用的Ruthroff拓扑结构。在一些实施例中,电磁变压器122可以使用在磁芯上的双绞线电缆,或者并联线路实现。FIG. 2 shows a system 120 according to another embodiment of the invention. System 120 is similar to system 100 shown in FIG. 1 , except that the transformer coupling RF amplifier 104 to the rest of the circuit is implemented using an electromagnetic transformer or balun 122 instead of DC isolation transformer 110 . In some embodiments, using electromagnetic type transformers instead of magnetic transformers can result in more compact circuits, especially for RF signals with larger bandwidths. In some embodiments, transformer 122 may be implemented using two transformers in a Guanella topology as shown. Alternatively, other electromagnetic transformer types or topologies may be such as, but not limited to, the Ruthroff topology that may be used. In some embodiments, electromagnetic transformer 122 may be implemented using twisted pair cables on magnetic cores, or parallel wiring.
因为变压器122没有在RF放大器104和扬声器线圈106之间提供DC隔离,所以与变压器122串联放置DC耦合电容器132和128,以便为RF放大器104提供DC隔离。变压器122的中心抽头可以通过电容器130接地。在本发明的替代实施例中,可以让变压器122的中心抽头打开着并且可以省略电容器130。Because transformer 122 does not provide DC isolation between RF amplifier 104 and speaker coil 106 , DC coupling capacitors 132 and 128 are placed in series with transformer 122 to provide DC isolation for RF amplifier 104 . The center tap of transformer 122 may be connected to ground through capacitor 130 . In an alternate embodiment of the invention, the center tap of transformer 122 may be left open and capacitor 130 may be omitted.
当音频放大器102和RF放大器104被配置为在分开的时间并且不同时地发射时,可以使用图3中所示的实施例系统200。在系统200中,RF放大器104通过AC耦合电容器218和220被并联耦合到扬声器线圈106。音频放大器102通过具有电感器202和电容器204的并联谐振电路201以及具有电感器206和电容器208的并联谐振电路203被耦合到扬声器线圈106。电容器204和208可以是由于晶体管210和212的寄生电容,由于在晶体管210和212的漏极和源极之间耦合的附加电容,或者由于其结合而导致的。在实施例中,并联谐振电路201和203的并联谐振频率对应于由RF放大器104产生的RF输出频率。例如,如果由放大器104产生的RF发射频率是13MHz,那么第一和第二并联谐振电路可以被配置成具有在大约13MHz处的并联谐振频率。并联谐振电路201和203的并联谐振对在RF发射频率处的RF放大器104提供高阻抗。应该领会到当音频放大器102被配置成提供差分输出信号时,可以使用系统200。然而,在单端实施例中,可以省略并联谐振电路203。The embodiment system 200 shown in FIG. 3 may be used when the audio amplifier 102 and the RF amplifier 104 are configured to transmit at separate times and not simultaneously. In system 200 , RF amplifier 104 is coupled in parallel to speaker coil 106 through AC coupling capacitors 218 and 220 . The audio amplifier 102 is coupled to the speaker coil 106 through a parallel resonant circuit 201 having an inductor 202 and a capacitor 204 and a parallel resonant circuit 203 having an inductor 206 and a capacitor 208 . Capacitors 204 and 208 may be due to parasitic capacitance of transistors 210 and 212, due to additional capacitance coupled between the drains and sources of transistors 210 and 212, or a combination thereof. In an embodiment, the parallel resonant frequency of parallel resonant circuits 201 and 203 corresponds to the RF output frequency generated by RF amplifier 104 . For example, if the RF transmission frequency generated by amplifier 104 is 13 MHz, then the first and second parallel resonant circuits may be configured to have a parallel resonant frequency at approximately 13 MHz. The parallel resonance of parallel resonant circuits 201 and 203 presents a high impedance to RF amplifier 104 at the RF transmit frequency. It should be appreciated that system 200 may be used when audio amplifier 102 is configured to provide a differential output signal. However, in single-ended embodiments, parallel resonant circuit 203 may be omitted.
在实施例中,由晶体管210为并联谐振电路201设旁路,并且由晶体管212为并联谐振电路203设旁路。当音频放大器102被激活并且RF放大器104被停用时,晶体管210和212可以通过信号S被激活。当晶体管210和212被激活时,利用低阻抗为并联谐振电路201和203设旁路,从而允许驱动扬声器线圈106的音频放大器102的高效操作。另一方面,当晶体管210和212被停用时,并联谐振电路201和203对在RF频率处的RF放大器104提供高阻抗。In an embodiment, the parallel resonant circuit 201 is bypassed by transistor 210 and the parallel resonant circuit 203 is bypassed by transistor 212 . Transistors 210 and 212 may be activated by signal S when audio amplifier 102 is activated and RF amplifier 104 is deactivated. When transistors 210 and 212 are activated, parallel resonant circuits 201 and 203 are bypassed with low impedance, allowing efficient operation of audio amplifier 102 driving speaker coil 106 . On the other hand, when transistors 210 and 212 are disabled, parallel resonant circuits 201 and 203 present a high impedance to RF amplifier 104 at RF frequencies.
在实施例中,当在并联谐振中被调谐到RF发射频率时,晶体管210和212的关断状态电容分别由电感器202和206补偿。因此,当开关晶体管210和212在关断状态时,对所述扬声器线圈106呈现大的RF阻抗。此外,晶体管210和212的大栅极电容的效应可通过添加分别与晶体管210和212的栅极串联的高欧姆电阻器214和216被减小。电阻器214和216减小了在晶体管210和212的源极和漏极上看到的栅源和栅漏电容的效应。根据使用的开关晶体管的类型,批量控制管脚VBULK可以被耦合到放大器102的最正电压产生输出或者最负电压产生输出以避免音频信号的箝位。因为晶体管210和212对在音频处的音频放大器102呈现低的串联阻抗(例如,在mΩ范围中),电感器202和206可以使用形体小的高欧姆电感器实现。在本发明的替代实施例中,可以省略晶体管210和212。In an embodiment, when tuned to the RF transmit frequency in parallel resonance, the off-state capacitances of transistors 210 and 212 are compensated by inductors 202 and 206, respectively. Therefore, a large RF impedance is presented to the speaker coil 106 when the switching transistors 210 and 212 are in the off state. Furthermore, the effect of the large gate capacitance of transistors 210 and 212 can be reduced by adding high ohmic resistors 214 and 216 in series with the gates of transistors 210 and 212, respectively. Resistors 214 and 216 reduce the effect of gate-source and gate-drain capacitance seen on the sources and drains of transistors 210 and 212 . Depending on the type of switching transistor used, bulk control pin VBULK may be coupled to the most positive voltage generating output or the most negative voltage generating output of amplifier 102 to avoid clamping of the audio signal. Because transistors 210 and 212 present a low series impedance (eg, in the mΩ range) to audio amplifier 102 at audio frequencies, inductors 202 and 206 may be implemented using small, high-ohmic inductors. In alternative embodiments of the invention, transistors 210 and 212 may be omitted.
图4示出实施例系统230,其中并联谐振电路201的谐振频率可以使用开关晶体管250和252,以及电容器232,234,236和238被调谐。类似地,并联谐振电路203的并联谐振频率可以使用开关晶体管254,256,电容器240,242,244和246被调谐。开关晶体管252和256通过电阻器262和264由信号S1驱动,并且开关晶体管250和254通过电阻器258和260由信号S2驱动。电阻器258,260,262,和264减小了晶体管250,252,254和256的栅极电容对它们各自的输出的影响。FIG. 4 shows an embodiment system 230 in which the resonant frequency of parallel resonant circuit 201 can be tuned using switching transistors 250 and 252 , and capacitors 232 , 234 , 236 and 238 . Similarly, the parallel resonant frequency of parallel resonant circuit 203 can be tuned using switching transistors 254 , 256 , capacitors 240 , 242 , 244 and 246 . Switching transistors 252 and 256 are driven by signal S1 through resistors 262 and 264 , and switching transistors 250 and 254 are driven by signal S2 through resistors 258 and 260 . Resistors 258, 260, 262, and 264 reduce the effect of the gate capacitance of transistors 250, 252, 254, and 256 on their respective outputs.
并联谐振电路201的频率可以通过激活开关252来降低,其将串联结合的电容器232和238与并联谐振电路201并联放置。这个并联谐振频率可以通过激活开关250被进一步降低,其将串联结合的电容器204和206与并联谐振电路201并联放置。接通开关254和256的效果对并联谐振电路203的并联谐振频率具有类似效果。类似地,当开关250,252,254和256是打开的时,并联谐振电路201和203的并联谐振频率可被提高。虽然对于每个并联谐振电路201和203只示出了两个开关晶体管,可以一起使用与电容器串联耦合的任何数目的开关,以调节并联谐振电路201和203的并联谐振频率。因此,在并联谐振电路201和203的并联谐振频率上的精确控制可通过适当选择开关和电容器来实现。The frequency of parallel resonant circuit 201 can be lowered by activating switch 252 , which places capacitors 232 and 238 combined in series in parallel with parallel resonant circuit 201 . This parallel resonant frequency can be further lowered by activating switch 250 , which places series-coupled capacitors 204 and 206 in parallel with parallel resonant circuit 201 . The effect of turning on switches 254 and 256 has a similar effect on the parallel resonant frequency of parallel resonant circuit 203 . Similarly, when the switches 250, 252, 254 and 256 are open, the parallel resonant frequency of the parallel resonant circuits 201 and 203 can be increased. Although only two switching transistors are shown for each parallel resonant circuit 201 and 203 , any number of switches coupled in series with capacitors may be used together to adjust the parallel resonant frequency of parallel resonant circuits 201 and 203 . Therefore, precise control over the parallel resonant frequency of parallel resonant circuits 201 and 203 can be achieved by proper selection of switches and capacitors.
在本发明的一些实施例中,开关250,252,254,和256,以及电容器232,234,236,238,240,242,244和246可以被实现在单个集成电路上。晶体管250,252,254,和256可以使用具有低电容和高线性度的晶体管实现。In some embodiments of the invention, switches 250, 252, 254, and 256, and capacitors 232, 234, 236, 238, 240, 242, 244, and 246 may be implemented on a single integrated circuit. Transistors 250, 252, 254, and 256 can be implemented using transistors with low capacitance and high linearity.
系统230可被进一步用来动态地调谐并联谐振电路201和203的中心频率。例如,当系统230落入靠近例如金属物体,水,和活体的导电物体的范围内时,扬声器线圈106的阻抗可以变化。通过响应于环境变化来调谐并联谐振电路201和203的并联谐振,可以保持高性能。在一些实施例中,在发射模式中使用靠近扬声器线圈106的第二线圈来感测扬声器线圈106的阻抗,或者在接收模式中为了最佳信噪比来调谐并联谐振电路的电容。调谐也可以被用来适应其中RF放大器104被配置为以不同RF发射频率来发射的系统。System 230 may further be used to dynamically tune the center frequencies of parallel resonant circuits 201 and 203 . For example, the impedance of the speaker coil 106 may change when the system 230 comes within close range of conductive objects such as metal objects, water, and living organisms. High performance can be maintained by tuning the parallel resonance of parallel resonant circuits 201 and 203 in response to environmental changes. In some embodiments, the impedance of the speaker coil 106 is sensed using a second coil close to the speaker coil 106 in transmit mode, or the capacitance of the parallel resonant circuit is tuned for optimal signal-to-noise ratio in receive mode. Tuning may also be used to accommodate systems where the RF amplifier 104 is configured to transmit at different RF transmit frequencies.
在一些实施例中,附加的旁路开关晶体管可以被加入以与在图3的系统200中开关210和212为并联谐振电路设旁路相同的方式来为并联谐振电路201和203设旁路。因此,体节点(bulk node)以大于由放大器102产生的最高输出电压的电压或者以小于由放大器102产生的最负电压的电压被偏置。在不包括这些开关的实施例中,因为晶体管250,252,254和256不是被DC耦合到开关晶体管,所以可以容忍在放大器102的输出处的超过体偏压的信号偏移。In some embodiments, additional bypass switch transistors may be added to bypass parallel resonant circuits 201 and 203 in the same manner as switches 210 and 212 bypassed parallel resonant circuits in system 200 of FIG. 3 . Thus, the bulk node is biased at a voltage greater than the highest output voltage produced by the amplifier 102 or at a voltage less than the most negative voltage produced by the amplifier 102 . In embodiments that do not include these switches, since transistors 250, 252, 254, and 256 are not DC coupled to switching transistors, signal excursions at the output of amplifier 102 that exceed body bias can be tolerated.
图5示出根据另一实施例的系统270。系统270与图4的系统230相似,其中添加了耦合到音频放大器102的输出的附加调谐网络。这些附加调谐网络可被用来进一步精确调谐所述系统。可替代地,附加调谐网络也可以被耦合到扬声器线圈106。Figure 5 shows a system 270 according to another embodiment. System 270 is similar to system 230 of FIG. 4 with the addition of an additional tuning network coupled to the output of audio amplifier 102 . These additional tuning networks can be used to further fine tune the system. Alternatively, an additional tuning network may also be coupled to speaker coil 106 .
开关晶体管272,274,276,和280可通过电容器290,292,296,和294被分别耦合到音频放大器102的输出。串联电阻器282,284,286,和288分别与开关晶体管272,274,276和280的栅极串联耦合,以降低栅极电容对在音频放大器102的输出处看到的电容的影响。应该领会到更多开关电容器单元可以与附加调谐网络并联耦合,以提供对由扬声器线圈106看到的电容和/或串联谐振频率的进一步精确调谐。Switching transistors 272, 274, 276, and 280 may be coupled to the output of audio amplifier 102 via capacitors 290, 292, 296, and 294, respectively. Series resistors 282 , 284 , 286 , and 288 are coupled in series with the gates of switching transistors 272 , 274 , 276 , and 280 , respectively, to reduce the effect of gate capacitance on the capacitance seen at the output of audio amplifier 102 . It should be appreciated that more switched capacitor units may be coupled in parallel with additional tuning networks to provide further precise tuning of the capacitance seen by speaker coil 106 and/or the series resonant frequency.
在一些实施例中,可以基于系统反馈或者在远程终端处接收到的信号水平来远程地控制控制端子S1,S2,S3和S4。在其它实施例中,可以使用振荡器(未示出)来测试系统以便确定控制端子S1,S2,S3和S4的状态。In some embodiments, the control terminals S1, S2, S3 and S4 may be controlled remotely based on system feedback or signal levels received at the remote terminal. In other embodiments, an oscillator (not shown) may be used to test the system to determine the state of control terminals S1 , S2 , S3 and S4 .
开关晶体管250,252,254,256,272,274,276和208可以使用MOS晶体管或者另一晶体管类型的晶体管(例如集成栅双极晶体管(IGBT))实现。在一些实施例中,可以使用商用开关晶体管部件,例如PGS22开关。可例如在集成电路上,在安装在混合封装内的一个或者多个集成电路中实现实施例系统,或者在分层电路上使用多个部件实现实施例系统。在一些实施例中,扬声器线圈106通过扬声器端口被耦合到其余电路部件。所述扬声器端口可以包括端子,其被配置成接受扬声器线圈106。Switching transistors 250 , 252 , 254 , 256 , 272 , 274 , 276 , and 208 may be implemented using MOS transistors or transistors of another transistor type, such as integrated gate bipolar transistors (IGBTs). In some embodiments, commercial switching transistor components may be used, such as a PGS22 switch. Embodiment systems may be implemented, for example, on an integrated circuit, in one or more integrated circuits mounted in a hybrid package, or on layered circuits using multiple components. In some embodiments, the speaker coil 106 is coupled to the remaining circuit components through a speaker port. The speaker port may include terminals configured to accept speaker coil 106 .
根据实施例,一种系统具有被配置为通过并联谐振电路耦合到扬声器线圈端口的音频放大器,以及被配置为在第一RF发射频率处发射RF信号的RF放大器。所述扬声器线圈端口被配置为耦合到扬声器线圈,并且所述并联谐振电路具有大约为第一射频(RF)发射频率的谐振频率。在某种情况下,所述系统可进一步包括扬声器线圈。According to an embodiment, a system has an audio amplifier configured to be coupled to a speaker coil port through a parallel resonant circuit, and an RF amplifier configured to transmit an RF signal at a first RF transmit frequency. The speaker coil port is configured to couple to a speaker coil, and the parallel resonant circuit has a resonant frequency about a first radio frequency (RF) transmit frequency. In some cases, the system may further include a speaker coil.
在实施例中,所述并联谐振电路包括与音频放大器和扬声器线圈端口串联耦合的第一变压器,使得RF放大器通过所述第一变压器耦合到扬声器线圈端口。所述第一变压器可包括耦合在音频放大器和扬声器线圈端口之间的第一绕组,以及耦合到RF放大器的第二绕组。在更多实施例中,第一变压器包括平衡-不平衡变换器(balun),其具有耦合在音频放大器和扬声器线圈端口之间的第一端口,和耦合到RF放大器的第二端口。该平衡-不平衡变换器可以使用例如Guanella平衡-不平衡变换器实现。In an embodiment, the parallel resonant circuit includes a first transformer coupled in series with the audio amplifier and the speaker coil port such that the RF amplifier is coupled to the speaker coil port through the first transformer. The first transformer may include a first winding coupled between the audio amplifier and the speaker coil port, and a second winding coupled to the RF amplifier. In further embodiments, the first transformer includes a balun having a first port coupled between the audio amplifier and the speaker coil port, and a second port coupled to the RF amplifier. The balun can be realized using, for example, a Guanella balun.
在一些实施例中,RF放大器与扬声器线圈端口并联耦合。在一个实例中,RF放大器通过耦合电容器耦合到扬声器线圈端口。该系统可以进一步包括与并联谐振电路并联耦合的旁路开关,使得当音频放大器有效时,旁路开关被配置成是闭合的,并且当音频放大器无效时,旁路开关被配置为是打开的。在这种情况下,并联谐振电路可以包括与旁路开关串联耦合的电感器,并且旁路开关的寄生电容可以提供并联谐振电路的电容的至少一部分。MOS晶体管或者其它类型的晶体管可被用来实现旁路开关。在一些实施例中,电阻器与MOS晶体管的栅极串联耦合。在另一实施例中,并联谐振电路的谐振频率是可调谐的。In some embodiments, an RF amplifier is coupled in parallel with the speaker coil port. In one example, the RF amplifier is coupled to the speaker coil port through a coupling capacitor. The system may further include a bypass switch coupled in parallel with the parallel resonant circuit such that when the audio amplifier is active the bypass switch is configured to be closed and when the audio amplifier is inactive the bypass switch is configured to be open. In this case, the parallel resonant circuit may include an inductor coupled in series with the bypass switch, and the parasitic capacitance of the bypass switch may provide at least a portion of the capacitance of the parallel resonant circuit. MOS transistors or other types of transistors can be used to implement the bypass switch. In some embodiments, a resistor is coupled in series with the gate of the MOS transistor. In another embodiment, the resonant frequency of the parallel resonant circuit is tunable.
根据另一实施例,电路包括音频放大器以及RF放大器,所述音频放大器被配置为通过与音频放大器串联耦合的变压器的输出端口耦合到扬声器线圈端口,所述RF放大器被配置为发射耦合到变压器的输入端口的RF信号。所述扬声器线圈端口可被配置为耦合到扬声器线圈。在一些实施例中,电路也可以包括扬声器线圈。According to another embodiment, a circuit includes an audio amplifier configured to be coupled to a speaker coil port through an output port of a transformer coupled in series with the audio amplifier, and an RF amplifier configured to transmit RF signal at the input port. The speaker coil port may be configured to couple to a speaker coil. In some embodiments, the circuit may also include a speaker coil.
在实施例中,变压器的输入端口包括第一绕组,并且变压器的输出端口包括第二绕组。此外,电容可以与第二绕组并联耦合,使得第二绕组和电容形成具有中心频率的并联谐振网络。所述RF放大器可被配置成以在大约中心频率处的RF发射频率发射。In an embodiment, the input port of the transformer includes a first winding and the output port of the transformer includes a second winding. Furthermore, the capacitor may be coupled in parallel with the second winding such that the second winding and the capacitor form a parallel resonant network having a center frequency. The RF amplifier may be configured to transmit at an RF transmit frequency at about a center frequency.
根据另一实施例,一种电路包括RF放大器,其与被配置成耦合到扬声器线圈的扬声器线圈端口并联耦合。具有第一端口的可调节并联谐振电路被耦合到扬声器线圈端口,并且音频放大器被耦合到可调节并联谐振电路的第二端口。在一些电路中,也包括扬声器线圈。可进一步在并联谐振电路的两端耦合旁路开关,使得当音频放大器有效时,旁路开关被配置成是闭合的,并且当RF放大器有效时旁路开关被配置成是打开的。According to another embodiment, a circuit includes an RF amplifier coupled in parallel with a speaker coil port configured to be coupled to a speaker coil. An adjustable parallel resonant circuit having a first port is coupled to the speaker coil port, and an audio amplifier is coupled to a second port of the adjustable parallel resonant circuit. In some circuits, speaker coils are also included. A bypass switch may further be coupled across the parallel resonant circuit such that the bypass switch is configured to be closed when the audio amplifier is active and is configured to be open when the RF amplifier is active.
在实施例中,可调节并联谐振电路包括耦合在音频放大器的第一端子和扬声器线圈端口的第一端子之间的第一并联谐振电路,和耦合在音频放大器的第二端子和扬声器线圈端口的第二端子之间的第二并联谐振电路。在一些情况下,可调节并联谐振电路包括可调节电容器和固定电感器。例如,可调节电容器可以使用耦合到固定电感器的至少一个可切换电容器实现。这个可切换电容器可以是与MOS开关串联耦合的电容器。In an embodiment, the adjustable parallel resonant circuit includes a first parallel resonant circuit coupled between a first terminal of the audio amplifier and a first terminal of the speaker coil port, and a first terminal coupled between a second terminal of the audio amplifier and the speaker coil port. A second parallel resonant circuit between the second terminals. In some cases, an adjustable parallel resonant circuit includes an adjustable capacitor and a fixed inductor. For example, an adjustable capacitor may be implemented using at least one switchable capacitor coupled to a fixed inductor. This switchable capacitor may be a capacitor coupled in series with the MOS switch.
根据另一实施例,一种通过可调节并联谐振电路操作耦合到音频放大器并且与RF放大器并联耦合的扬声器线圈的方法,包括以音频模式操作扬声器线圈,并且以RF模式操作扬声器线圈。所述音频模式包括激活音频放大器并且停用RF放大器。以音频模式操作扬声器线圈可以进一步包括为可调节并联谐振电路设旁路。另一方面,所述RF模式包括使用RF放大器发射RF信号,使得RF信号具有接近可调节并联谐振电路的谐振频率的频率。According to another embodiment, a method of operating a speaker coil coupled to an audio amplifier and in parallel with an RF amplifier through an adjustable parallel resonant circuit includes operating the speaker coil in an audio mode and operating the speaker coil in an RF mode. The audio mode includes activating the audio amplifier and deactivating the RF amplifier. Operating the speaker coil in the audio mode may further include bypassing the adjustable parallel resonant circuit. In another aspect, the RF mode includes transmitting an RF signal using an RF amplifier such that the RF signal has a frequency close to a resonant frequency of the adjustable parallel resonant circuit.
在实施例中,该方法可进一步包括调节耦合到可调节并联谐振电路的电感器的电容。调节所述电容可以包括激活耦合到电感器的至少一个端子的开关网络,所述开关网络包括与至少一个电容器串联耦合的开关晶体管。In an embodiment, the method may further include adjusting a capacitance of an inductor coupled to the adjustable parallel resonant circuit. Adjusting the capacitance may include activating a switching network coupled to at least one terminal of an inductor, the switching network including a switching transistor coupled in series with at least one capacitor.
实施例系统的优点包括将音频功率放大器和射频(RF)功率放大器耦合到电磁扬声器同时保持系统的高功率效率的能力。另一个优点包括对音频功率放大器和RF放大器提供良好的信号隔离同时还对于音频和RF信号两者都提供低的插入损耗的能力。Advantages of embodiment systems include the ability to couple audio power amplifiers and radio frequency (RF) power amplifiers to electromagnetic speakers while maintaining high power efficiency of the system. Another advantage includes the ability to provide good signal isolation for audio power amplifiers and RF amplifiers while also providing low insertion loss for both audio and RF signals.
虽然已经参照说明性实施例描述了本发明,但是该描述不旨在以限制性的意义来解释。当参照该描述时,对于本领域技术人员来说,本发明的说明性实施例以及其它实施例的各种修改和结合将变得明显。因此所附权利要求旨在包括任何这样的修改或者实施例。While this invention has been described with reference to illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will become apparent to persons skilled in the art upon reference to the description. It is therefore intended that the appended claims cover any such modifications or embodiments.
Claims (28)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/607,382 | 2012-09-07 | ||
| US13/607382 | 2012-09-07 | ||
| US13/607,382 US8909162B2 (en) | 2012-09-07 | 2012-09-07 | System and method for transmitting a radio frequency signal through a speaker coil |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103686533A CN103686533A (en) | 2014-03-26 |
| CN103686533B true CN103686533B (en) | 2017-04-26 |
Family
ID=50153529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310401764.7A Expired - Fee Related CN103686533B (en) | 2012-09-07 | 2013-09-06 | System and method for transmitting a radio frequency signal through a speaker coil |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8909162B2 (en) |
| KR (2) | KR101529779B1 (en) |
| CN (1) | CN103686533B (en) |
| DE (1) | DE102013217545B4 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11757490B2 (en) | 2018-08-02 | 2023-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V | Data transmission from a user terminal to another apparatus |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9306603B2 (en) * | 2014-01-24 | 2016-04-05 | Qualcomm Incorporated | Tunable radio frequency (RF) front-end architecture using filter having adjustable inductance and capacitance |
| US9882588B2 (en) | 2015-07-06 | 2018-01-30 | Mediatek Inc. | Matching network for load line change |
| US20170041715A1 (en) * | 2015-07-16 | 2017-02-09 | Knowles Electronics (Beijing) Co., Ltd. | Speaker with coil antenna |
| EP3648428B1 (en) * | 2015-12-15 | 2022-02-23 | Huawei Technologies Co., Ltd. | Polar transmitter with tunable matching network |
| US11237649B2 (en) * | 2017-08-10 | 2022-02-01 | Mediatek Singapore Pte. Ltd. | Inductive beacon for time-keying virtual reality applications |
| JP2019118075A (en) * | 2017-12-27 | 2019-07-18 | 株式会社村田製作所 | Matching circuit and power amplification circuit |
| KR102308855B1 (en) * | 2018-07-11 | 2021-10-06 | 주식회사 인스파워 | Power amplifyer |
| DE102019201152B3 (en) | 2019-01-30 | 2020-06-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bi-directional configuration of sensor nodes with a mobile phone without expansion |
| DE102019206836A1 (en) | 2019-05-10 | 2020-11-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Efficient communication for configuring sensor nodes |
| US11121676B1 (en) * | 2019-10-08 | 2021-09-14 | Dialog Semiconductor B.V. | Methods and circuits for harmonic suppression |
| WO2021150405A1 (en) * | 2020-01-24 | 2021-07-29 | Avx Antenna, Inc. D/B/A Ethertronics, Inc. | Radio frequency (rf) amplifier circuit for antenna systems having a modal antenna |
| CN112462170B (en) * | 2020-11-06 | 2021-11-19 | 北京航空航天大学 | Balance-unbalance conversion circuit for testing wireless charging coil |
| US11716056B2 (en) * | 2020-12-02 | 2023-08-01 | Texas Instruments Incorporated | Power amplifier with series transformer combiners and harmonic tuning |
| CN116686222A (en) * | 2021-05-29 | 2023-09-01 | 华为技术有限公司 | A transceiver circuit, communication system and electronic equipment |
| US20230216453A1 (en) * | 2023-03-14 | 2023-07-06 | Intel Corporation | Dynamic speaker coils as radio frequency antennas in mobile computing devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000513159A (en) * | 1996-06-21 | 2000-10-03 | ユニヴァーシティ・オブ・ブリストル | Low power audio equipment |
| KR20080060113A (en) * | 2006-12-26 | 2008-07-01 | 엘지전자 주식회사 | Apparatus and method for implementing loop antenna of mobile terminal |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2812393A (en) * | 1954-10-06 | 1957-11-05 | Zenith Radio Corp | Power supply and bias arrangement for push-pull transistor amplifier |
| US3112446A (en) * | 1961-11-09 | 1963-11-26 | Landers Frary & Clark | Combination radio transmitter and receiver |
| JP3286191B2 (en) | 1996-11-26 | 2002-05-27 | 収一 佐藤 | Speaker drive circuit in audio system |
| KR100668423B1 (en) | 2005-03-14 | 2007-01-16 | 삼성전자주식회사 | Speaker device of portable wireless terminal for improving antenna performance |
| US20070060221A1 (en) | 2005-09-12 | 2007-03-15 | Motorola, Inc. | Speaker voice coil antenna |
| TWI281340B (en) | 2005-10-26 | 2007-05-11 | Benq Corp | Portable device using a speaker as an antenna, method for transmitting high frequency signals and method for using a speaker to process high frequency signals and voice signals at the same time |
| CN101232124A (en) | 2008-01-11 | 2008-07-30 | 邱小军 | Method for making near-field communication aerial |
| TWI363511B (en) | 2008-02-26 | 2012-05-01 | Mstar Semiconductor Inc | Wireless communication apparatus and method thereof |
| TW201127079A (en) | 2010-01-22 | 2011-08-01 | Wistron Corp | Audio broadcasting device and portable device using the same |
| US9118354B2 (en) | 2011-08-30 | 2015-08-25 | Apple Inc. | Electronic device with shared near field communications element |
| CN202617115U (en) | 2012-04-27 | 2012-12-19 | 中兴通讯股份有限公司 | NFC (Near Field Communication) communication module |
-
2012
- 2012-09-07 US US13/607,382 patent/US8909162B2/en not_active Expired - Fee Related
-
2013
- 2013-09-03 DE DE102013217545.0A patent/DE102013217545B4/en not_active Expired - Fee Related
- 2013-09-05 KR KR1020130106781A patent/KR101529779B1/en not_active Expired - Fee Related
- 2013-09-06 CN CN201310401764.7A patent/CN103686533B/en not_active Expired - Fee Related
-
2014
- 2014-11-06 KR KR1020140153871A patent/KR101613793B1/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000513159A (en) * | 1996-06-21 | 2000-10-03 | ユニヴァーシティ・オブ・ブリストル | Low power audio equipment |
| KR20080060113A (en) * | 2006-12-26 | 2008-07-01 | 엘지전자 주식회사 | Apparatus and method for implementing loop antenna of mobile terminal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11757490B2 (en) | 2018-08-02 | 2023-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V | Data transmission from a user terminal to another apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102013217545B4 (en) | 2015-12-03 |
| KR20150001698A (en) | 2015-01-06 |
| KR101529779B1 (en) | 2015-06-17 |
| US8909162B2 (en) | 2014-12-09 |
| KR101613793B1 (en) | 2016-04-19 |
| KR20140032907A (en) | 2014-03-17 |
| US20140073271A1 (en) | 2014-03-13 |
| CN103686533A (en) | 2014-03-26 |
| DE102013217545A1 (en) | 2014-03-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103686533B (en) | System and method for transmitting a radio frequency signal through a speaker coil | |
| KR101234957B1 (en) | Apparatus for controlling power with an output network | |
| US8368481B2 (en) | RF switchable balun | |
| US10193521B2 (en) | Adjustable impedance matching network | |
| US8779855B2 (en) | Power amplification circuit having transformer | |
| CN101414852B (en) | Output coupling and filter circuit for power line carrier communication | |
| TW201304401A (en) | Transceiver and integrated circuit | |
| US9093978B2 (en) | Multi-loop transformer having wideband frequency applications | |
| KR20170004850A (en) | Scaleable rf tuned low noise amplifier | |
| CN109525262B (en) | Receiver circuit and wireless communication device | |
| US8639195B2 (en) | High voltage swing input/output enabled in a standard IC process using passive impedance transformation | |
| CN110932687A (en) | An AC Stacked Power Amplifier | |
| CN111030621A (en) | An AC Stacked Power Amplifier for Wireless Terminals | |
| CN107548511B (en) | RF transformer for converting input RF signal to output RF signal | |
| CN115053455B (en) | Compact Antenna Impedance Tuner | |
| TW202247598A (en) | Low noise amplifier incorporating sutardja transformer | |
| CN115021693A (en) | Power amplifier applied to 5G frequency band | |
| CN110635817B (en) | LC matching circuit for enhancing transmitting signal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170426 Termination date: 20190906 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |