CN103681492B - processing method - Google Patents
processing method Download PDFInfo
- Publication number
- CN103681492B CN103681492B CN201310414816.4A CN201310414816A CN103681492B CN 103681492 B CN103681492 B CN 103681492B CN 201310414816 A CN201310414816 A CN 201310414816A CN 103681492 B CN103681492 B CN 103681492B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- wafer
- expansion
- adhesive sheet
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Engineering (AREA)
Abstract
本发明提供一种加工方法,当对在背面粘贴有粘接片的晶片等板状物进行扩张来进行分割时,能够完全防止粘接片的碎屑附着到板状物的表面。当在经粘接片(12)将晶片(1)配设于扩展带(13)上的状态下扩张扩展带(13)从而将晶片(1)分割成芯片(3)时,将保护部件(11)配设到晶片(1)的表面(1a),对粘接片(12)的向晶片(1)的外周侧探出的探出部(12a)进行分裂(第一扩张步骤),接下来除去保护部件(11)(保护部件除去步骤),进一步扩张扩展带,沿着分割预定线来分割晶片和粘接片,从而得到多个带有粘接片的芯片第二扩张步骤)。使在分裂粘接片时产生的粘接片的碎屑附着在保护部件上,防止碎屑附着到晶片的表面。
The present invention provides a processing method capable of completely preventing debris of the adhesive sheet from adhering to the surface of the plate when expanding and dividing a plate-shaped object such as a wafer with an adhesive sheet attached to its back. When expanding the expansion tape (13) in a state where the wafer (1) is placed on the expansion tape (13) via the adhesive sheet (12) to divide the wafer (1) into chips (3), the protective member ( 11) It is attached to the surface (1a) of the wafer (1), and the protruding portion (12a) of the adhesive sheet (12) protruding toward the outer peripheral side of the wafer (1) is split (first expansion step), followed by Next, remove the protective member (11) (protective member removal step), further expand the expansion tape, and divide the wafer and the adhesive sheet along the dividing line to obtain a plurality of chips with the adhesive sheet (second expansion step). Chips of the adhesive sheet generated when the adhesive sheet is split are attached to the protective member to prevent the chips from adhering to the surface of the wafer.
Description
技术领域technical field
本发明涉及将半导体晶片等薄的板状物分割成多个芯片的加工方法,特别是涉及粘贴有粘接片的板状物的加工方法。The present invention relates to a processing method for dividing a thin plate-shaped object such as a semiconductor wafer into a plurality of chips, and particularly relates to a processing method for a plate-shaped object on which an adhesive sheet is pasted.
背景技术Background technique
在表面形成有多个器件的半导体晶片等圆板状晶片被沿着器件间的分割预定线分割而被单片化成半导体芯片。另外,为了预先将安装芯片时的粘接层形成到背面而提供了这样的技术:在DAF(Die Attach Film,芯片贴膜)等粘接层形成用的粘接片粘贴于晶片的背面的状态下,分割晶片。该情况下,粘接片形成为直径比晶片直径稍大,粘贴在晶片背面的粘接片的一部分从晶片的外周探出。A disk-shaped wafer such as a semiconductor wafer having a plurality of devices formed on its surface is divided along planned dividing lines between the devices, and is singulated into semiconductor chips. In addition, in order to form the adhesive layer when mounting the chip on the back surface in advance, there is provided a technology in which an adhesive sheet for forming an adhesive layer such as DAF (Die Attach Film) is attached to the back surface of the wafer , split the wafer. In this case, the adhesive sheet is formed to have a diameter slightly larger than that of the wafer, and a part of the adhesive sheet attached to the back surface of the wafer protrudes from the outer periphery of the wafer.
在分割晶片时,粘接片与晶片一起被分割,但是当采用通过扩张粘贴在晶片的扩展带等来对晶片施加外力从而分割晶片的方法时,其中,上述晶片具有沿着分割预定线的分割起点,存在这样的问题:从晶片的外周探出的部分也被分裂,那时产生的粘接片的碎屑会附着在晶片的表面。When dividing the wafer, the adhesive sheet is divided together with the wafer, but when the method of dividing the wafer by applying an external force to the wafer by expanding the expansion tape or the like pasted on the wafer, wherein the above-mentioned wafer has a division along the planned dividing line Starting point, there is a problem that the portion protruding from the outer periphery of the wafer is also split, and debris of the adhesive sheet generated at that time adheres to the surface of the wafer.
因此,为了解决该问题,提出了这样的技术:在扩展片的扩张中通过鼓风构件对晶片表面喷出空气,以便使粘接片的碎屑不会附着在晶片表面(专利文献1)。Therefore, in order to solve this problem, a technique has been proposed in which air is blown onto the wafer surface from an air blowing member during expansion of the expansion sheet so that debris of the adhesive sheet does not adhere to the wafer surface (Patent Document 1).
现有技术文献prior art literature
专利文献1:日本特开2009-272503号公报Patent Document 1: Japanese Patent Laid-Open No. 2009-272503
但是,即使通过上述文献所记载的技术也难以完全防止粘接片的碎屑附着到晶片表面。However, even with the techniques described in the above documents, it is difficult to completely prevent the debris of the adhesive sheet from adhering to the wafer surface.
发明内容Contents of the invention
本发明是鉴于上述事情而完成的发明,其主要的技术课题在于提供一种加工方法,当对在背面粘贴有粘接片的晶片等板状物进行扩张来进行分割时,能够完全防止粘接片的碎屑附着到板状物的表面。The present invention was made in view of the above, and its main technical task is to provide a processing method that can completely prevent sticking when expanding and dividing a plate-shaped object such as a wafer with an adhesive sheet attached on the back surface. Fragments of the flakes adhere to the surface of the plate.
本发明的加工方法是在表面配设有保护部件并且沿着分割预定线形成有分割起点的板状物的加工方法,上述加工方法的特征在于,具有:粘贴步骤,经直径比板状物大的粘接片将板状物配设到扩展带上;第一扩张步骤,在实施了上述粘贴步骤后,在上述保护部件配设于板状物的表面的状态下扩张上述扩展带,从而对向板状物的外周侧探出的上述粘接片进行分裂;保护部件除去步骤,在实施了上述第一扩张步骤后,除去配设在板状物表面的上述保护部件;以及第二扩张步骤,在实施了上述保护部件除去步骤后,扩张上述扩展带,从上述分割起点沿着上述分割预定线来分割板状物,并且沿着上述分割预定线断裂与板状物对应的上述粘接片。The processing method of the present invention is a processing method for a plate-shaped object provided with a protective member on the surface and a starting point for division along the planned dividing line. The above-mentioned processing method is characterized in that it has the following step: The adhesive sheet disposes the plate on the expansion belt; the first expansion step is to expand the expansion belt in the state where the protective member is arranged on the surface of the plate after the above-mentioned sticking step is carried out, thereby The above-mentioned adhesive sheet protruding to the outer peripheral side of the plate is split; the protective member removing step is to remove the above-mentioned protective member arranged on the surface of the plate after the above-mentioned first expansion step; and the second expansion step , after implementing the step of removing the protective member, expanding the expanded band, dividing the plate from the starting point of division along the planned dividing line, and breaking the adhesive sheet corresponding to the plate along the planned dividing line .
在本发明的加工方法中,在保护部件配设于板状物表面的状态下完成第一扩张步骤,在该时刻至少对向板状物的外周侧探出的粘接片进行断裂。断裂时产生的粘接片的碎屑附着在保护部件上。在实施了第一扩张步骤后,由于从板状物上除去附着有碎屑的保护部件,所以能够完全防止碎屑附着到板状物的表面。In the processing method of the present invention, the first expanding step is completed with the protective member disposed on the surface of the plate, and at least the adhesive sheet protruding toward the outer peripheral side of the plate is broken at this point. Fragments of the adhesive sheet generated at the time of breakage adhere to the protective member. After the first expanding step is performed, since the protective member to which debris is attached is removed from the plate, it is possible to completely prevent debris from adhering to the surface of the plate.
在本发明中,包括如下的方式,上述加工方法具有环状框架粘贴步骤,在该环状框架粘贴步骤中,在实施了上述第二扩张步骤后,在维持了分割板状物而形成的一个个芯片之间的间隔的状态下,将环状框架粘贴到上述扩展带,形成将分割板状物而形成的多个上述芯片收纳于上述环状框架的开口的方式。根据该方式,维持分割后的一个个芯片间的间隔,通过对环状框架进行处理能够使芯片不破损地进行搬送等。In the present invention, the method includes a mode in which the above-mentioned processing method has a ring-shaped frame sticking step, and in the ring-shaped frame sticking step, after the second expansion step is performed, one formed by dividing the plate is maintained. In the state where the gap between the individual chips is maintained, the annular frame is attached to the above-mentioned expansion tape, and a plurality of the above-mentioned chips formed by dividing the plate-shaped object are stored in the opening of the above-mentioned annular frame. According to this aspect, the interval between the divided chips is maintained, and the chips can be transported without being damaged by handling the ring frame.
发明效果Invention effect
根据本发明,提供了一种加工方法,当对背面粘贴有粘接片的晶片等板状物进行扩张来进行分割时,能够完全防止粘接片的碎屑附着在板状物的表面。According to the present invention, there is provided a processing method capable of completely preventing debris of the adhesive sheet from adhering to the surface of the plate when expanding and dividing a plate-shaped object such as a wafer with an adhesive sheet attached on its back.
附图说明Description of drawings
图1是表示本发明的一实施方式的加工方法的保护部件粘贴步骤的立体图。FIG. 1 is a perspective view showing a step of attaching a protective member in a processing method according to an embodiment of the present invention.
图2是表示一实施方式的加工方法的背面磨削步骤的立体图。Fig. 2 is a perspective view showing a back grinding step of the machining method according to the embodiment.
图3是表示一实施方式的加工方法的改性层形成步骤的立体图。FIG. 3 is a perspective view showing a modified layer forming step in a processing method according to an embodiment.
图4是表示改性层形成步骤的详细情况的晶片的局部剖视图。Fig. 4 is a partial sectional view of a wafer showing details of a modified layer forming step.
图5是表示一实施方式的加工方法的粘贴步骤的立体图。Fig. 5 is a perspective view showing a pasting step of a processing method according to an embodiment.
图6是表示一实施方式的加工方法的第一扩张步骤的立体图。Fig. 6 is a perspective view showing a first expanding step of the processing method according to the embodiment.
图7是表示第一扩张步骤的剖视图。Fig. 7 is a sectional view showing a first expansion step.
图8是表示第一扩张步骤后的状态的立体图。Fig. 8 is a perspective view showing the state after the first expansion step.
图9是表示一实施方式的加工方法的保护部件除去步骤的立体图。9 is a perspective view showing a step of removing a protective member in a processing method according to an embodiment.
图10是表示一实施方式的加工方法的第二扩张步骤的立体图。Fig. 10 is a perspective view showing a second expanding step of the processing method according to the embodiment.
图11是表示第二扩张步骤的剖视图。Fig. 11 is a sectional view showing a second expansion step.
图12中,(a)是表示一实施方式的加工方法的环状框架粘贴步骤的剖视图,(b)是表示环状框架粘贴步骤后的扩展带切断的剖视图。In FIG. 12 , (a) is a cross-sectional view showing the step of sticking the ring frame in the processing method according to one embodiment, and (b) is a cross-sectional view showing cutting of the expansion tape after the step of sticking the ring frame.
图13是表示扩展带切断后从扩展装置搬出了晶片的状态的立体图。13 is a perspective view showing a state in which wafers are carried out from the expansion apparatus after the expansion tape is cut.
图14是表示其他实施方式的扩展装置的立体图,(a)表示放置了晶片的状态,(b)表示进行了第一扩张步骤的状态,(c)表示进行了第二扩张步骤的状态。14 is a perspective view showing an expanding apparatus according to another embodiment, wherein (a) shows a state where a wafer is set, (b) shows a state where a first expanding step is performed, and (c) shows a state where a second expanding step is performed.
标号说明Label description
1...晶片(板状物)1...wafer (plate)
1a...晶片的表面1a...The surface of the wafer
1c...改性层(分割起点)1c...modified layer (splitting starting point)
3...芯片3...chip
11...保护部件11...protection parts
12...粘接片12...Adhesive sheet
12a...粘接片的探出部12a...Protruding part of the adhesive sheet
13...扩展带13...Extension belt
14...环状框架14...ring frame
14a...环状框架的开口。14a... Opening of the ring frame.
具体实施方式detailed description
以下,参照附图对包括本发明的加工方法的一实施方式的晶片的加工方法进行说明。Hereinafter, a wafer processing method including an embodiment of the processing method of the present invention will be described with reference to the drawings.
(1)保护部件粘贴步骤(1) Pasting steps of protective parts
如图1所示,将保护部件11粘贴到半导体晶片等圆板状的晶片(板状物)1的表面1a整个面。在晶片1的表面(图1中下表面侧为表面)1a呈格子状地设定有多条分割预定线,在由分割预定线划分出的多个矩形形状的各器件区域分别形成有具有LSI(大规模集成电路)等电子回路的器件2。关于保护带11,例如使用在具有挠性的树脂片的一面形成有黏着层的部件等作为保护部件11,经黏着层以覆盖晶片1的表面1a的方式来粘贴保护部件11。作为保护部件11也可以是使用硅晶片或玻璃基板、陶瓷基板等硬板,通过粘接剂等粘贴到晶片的方式。As shown in FIG. 1 , the protective member 11 is attached to the entire surface 1 a of a disk-shaped wafer (plate-like object) 1 such as a semiconductor wafer. On the surface (the lower surface side in FIG. 1 is the surface) 1a of the wafer 1, a plurality of planned dividing lines are set in a grid pattern, and each device region having a plurality of rectangular shapes divided by the planned dividing lines is formed with an LSI. (Large-scale integrated circuits) and other electronic circuit devices 2. For the protective tape 11 , for example, a flexible resin sheet having an adhesive layer formed on one surface thereof is used as the protective member 11 , and the protective member 11 is pasted so as to cover the surface 1 a of the wafer 1 via the adhesive layer. As the protection member 11 , a hard board such as a silicon wafer, a glass substrate, or a ceramic substrate may be used, and affixed to the wafer with an adhesive or the like.
(2)背面磨削步骤(2) Back grinding step
接下来,如图2所示,使保护部件11侧对准保持工作台21通过保持工作台21来保持晶片1,通过磨削构件22来磨削向上方露出的晶片1的背面1b,从而使晶片1薄化为预定厚度(例如50~100μm左右)。Next, as shown in FIG. 2, the wafer 1 is held by the holding table 21 by aligning the protective member 11 side with the holding table 21, and the back surface 1b of the wafer 1 exposed upward is ground by the grinding member 22, thereby making The wafer 1 is thinned to a predetermined thickness (for example, about 50 to 100 μm).
保持工作台21是通过空气吸引产生的负压作用而将被加工物吸附保持到由多孔性材料形成的圆形形状的水平保持面上的一般众所周知的负压卡盘工作台,利用未图示的旋转驱动机构来使保持工作台21绕轴旋转。磨削构件22是这样的构件:在沿铅直方向延伸并由未图示的马达旋转驱动的主轴23的末端经凸缘24固定有磨削轮25,磨削构件22上下可动地配设于保持工作台21的上方。在磨削轮25的下表面外周部呈环状地排列紧固有多个磨具26。磨具26使用与晶片1的材质相应的材质,例如,使用通过金属粘合剂或树脂粘合剂等粘合剂来将金刚石磨粒聚在一起而成形的金刚石磨具等。The holding table 21 is a generally well-known negative pressure chuck table that adsorbs and holds the workpiece on a circular horizontal holding surface formed of a porous material through the negative pressure effect generated by air suction. The rotary driving mechanism is used to make the holding table 21 rotate around the axis. The grinding member 22 is a member in which a grinding wheel 25 is fixed via a flange 24 to the end of a main shaft 23 extending in the vertical direction and rotationally driven by a motor not shown, and the grinding member 22 is vertically movably arranged. On the top of the holding table 21. A plurality of grindstones 26 are arranged and fastened in a ring shape on the outer peripheral portion of the lower surface of the grinding wheel 25 . The grindstone 26 is made of a material corresponding to the material of the wafer 1 , for example, a diamond grindstone formed by aggregating diamond abrasive grains with a binder such as a metal bond or a resin bond is used.
在磨削步骤中,使保护部件11侧对准保持面将晶片1装载到保持工作台21上,通过负压卡盘来吸附保持晶片1。并且,自保持工作台21以预定速度向一个方向旋转的状态起使磨削构件22下降,将旋转的磨削轮25的磨具26按压到晶片1的背面1b,从而对背面1b整面进行磨削。In the grinding step, the wafer 1 is loaded on the holding table 21 with the side of the protective member 11 aligned with the holding surface, and the wafer 1 is sucked and held by the negative pressure chuck. Then, from the state where the holding table 21 rotates in one direction at a predetermined speed, the grinding member 22 is lowered, and the grinding wheel 26 of the rotating grinding wheel 25 is pressed against the back surface 1b of the wafer 1, thereby performing grinding on the entire surface of the back surface 1b. grinding.
(3)改性层形成步骤(3) Modified layer formation step
接下来,沿着分割预定线照射相对于晶片1具有透射性的波长的激光光束,从而在晶片1的内部形成沿着分割预定线的改性层。如图3所示,关于改性层的形成,使保护部件11侧对准与上述保持工作台21同样的能够旋转的负压卡盘式的保持工作台31的保持面,将晶片1装载到保持工作台31上,通过负压卡盘来吸附保持晶片1。并且,如图4所示,在聚光点定位在晶片1的内部的状态下,从配设于保持工作台31的上方的激光照射构件32的照射部33,从磨削过的背面1b侧,沿着分割预定线照射相对于晶片1具有透射性的波长的激光光束L,从而形成改性层1c。Next, a laser beam having a wavelength that is transparent to the wafer 1 is irradiated along the planned dividing line to form a reformed layer along the planned dividing line inside the wafer 1 . As shown in FIG. 3 , regarding the formation of the reformed layer, the protective member 11 side is aligned with the holding surface of the negative pressure chuck type holding table 31 which is rotatable as the above-mentioned holding table 21, and the wafer 1 is loaded on it. On the holding table 31, the wafer 1 is sucked and held by a negative pressure chuck. And, as shown in FIG. 4 , in the state where the focal point is positioned inside the wafer 1 , from the irradiation portion 33 of the laser irradiation member 32 arranged above the holding table 31 , from the side of the ground back surface 1 b , and irradiate the laser beam L having a wavelength that is transparent to the wafer 1 along the planned dividing line, thereby forming the modified layer 1c.
保持工作台31能够在图3所示的X方向以及Y方向移动,例如通过使保持工作台31在X方向移动的加工进给来进行激光光束L针对晶片1的扫描。该情况下,通过使保持工作台31在Y方向移动的分度进给来选择照射激光光束L的分割预定线。另外,为了使分割预定线为沿着X方向的状态,使保持工作台31旋转。从激光光束L的被照射面(晶片1的背面1b)在一定深度的位置以一定的层厚形成改性层1c。改性层1c具有强度比晶片1内的其他部分低的特性,并且在之后的第二扩张步骤中成为晶片1的分割起点。The holding table 31 is movable in the X direction and the Y direction shown in FIG. 3 , and the laser beam L is scanned on the wafer 1 by, for example, processing feed that moves the holding table 31 in the X direction. In this case, the planned dividing line on which the laser beam L is irradiated is selected by index feed that moves the holding table 31 in the Y direction. In addition, the holding table 31 is rotated so that the planned dividing line is in a state along the X direction. The modified layer 1 c is formed at a position at a certain depth from a surface to be irradiated with the laser beam L (back surface 1 b of the wafer 1 ) and has a constant layer thickness. Modified layer 1c has a property of being lower in strength than other parts in wafer 1, and serves as a starting point for dividing wafer 1 in the subsequent second expansion step.
(4)粘贴步骤(4) Paste step
接下来,如图5所示,经直径比晶片1大的粘接片12将晶片1的背面1b侧配设于扩展带13上。扩展带13例如是在聚氯乙烯或聚烯烃等具有伸缩性的合成树脂片等的一面形成有黏着层的扩展带,此时,使用比晶片1大的矩形形状的扩展带或卷绕为卷筒状的扩展带。Next, as shown in FIG. 5 , the rear surface 1 b side of the wafer 1 is placed on the expansion tape 13 via the adhesive sheet 12 having a larger diameter than the wafer 1 . The extended tape 13 is, for example, an extended tape with an adhesive layer formed on one side of a stretchable synthetic resin sheet such as polyvinyl chloride or polyolefin. In this case, a rectangular extended tape larger than the wafer 1 is used or wound into a roll. Cylindrical extension strap.
粘贴步骤中,将由DAF等构成的粘接片12呈圆形形状地配设到扩展带13的黏着层侧,接下来使晶片1的背面1b侧对准并粘贴到该粘接片12上。另外,也可以将晶片1粘贴到预先配设有圆形形状的粘接片12的扩展带13上。或者,还可以将粘接片12粘贴到晶片1的背面1b,再将该粘接片12粘贴到扩展带13的黏着层。粘接片12形成为直径比晶片1大的圆形形状,成为在晶片1的外周侧出现了粘接片12的探出部12a的状态。In the attaching step, an adhesive sheet 12 made of DAF or the like is arranged in a circular shape on the adhesive layer side of the extension tape 13 , and then the wafer 1 is aligned and attached to the adhesive sheet 12 on the back side 1b side. In addition, the wafer 1 may be pasted on the extension tape 13 provided with the circular adhesive sheet 12 in advance. Alternatively, the adhesive sheet 12 may be attached to the back surface 1 b of the wafer 1 , and then the adhesive sheet 12 may be attached to the adhesive layer of the extension tape 13 . The adhesive sheet 12 is formed in a circular shape with a diameter larger than that of the wafer 1 , and a protruding portion 12 a of the adhesive sheet 12 is formed on the outer peripheral side of the wafer 1 .
(5)第一扩张步骤(5) The first expansion step
接下来,在保护部件11配设于晶片1的表面1a的状态下扩张扩展带13,并分裂粘接片12的向晶片1的外周侧探出的探出部12a。Next, the expansion tape 13 is expanded while the protective member 11 is disposed on the surface 1 a of the wafer 1 , and the protruding portion 12 a of the adhesive sheet 12 protruding toward the outer peripheral side of the wafer 1 is split.
在第一扩张步骤中,使用图6以及图7所示的扩展装置40。扩展装置40具有夹紧部件41,夹紧部件41分别把持扩展带13四个边的端缘并向与端缘正交的外侧牵拉。夹紧部件41是以上下对称的状态组合了截面为L字状的框架42而得到的结构,在各框架42的内侧接近地排列有多个辊子43。这些辊子43以能够以正交于框架42的长边方向的旋转轴为中心旋转的方式支撑在框架42。扩展带13被夹持在上下的辊子43之间,当扩展带13在夹持状态下在沿着端缘的方向伸长时,辊子43追随于此而滚动。In the first expansion step, the expansion device 40 shown in FIGS. 6 and 7 is used. The expansion device 40 has clamping members 41 that hold the end edges of the four sides of the expansion belt 13 and pull them outward perpendicular to the end edges. The clamp member 41 has a structure obtained by combining frames 42 having an L-shaped cross section in a vertically symmetrical state, and a plurality of rollers 43 are closely arranged inside each frame 42 . These rollers 43 are supported by the frame 42 so as to be rotatable about a rotation axis perpendicular to the longitudinal direction of the frame 42 . The expansion belt 13 is sandwiched between the upper and lower rollers 43 , and when the expansion belt 13 is stretched in the direction along the edge in the sandwiched state, the rollers 43 roll along therewith.
关于扩展带13的扩张,首先,使扩展带13的四个边的端缘穿过扩展装置40的各夹紧部件41的上下框架42之间,使上下的框架42彼此靠近,通过上下的辊子43来夹持扩展带13。接着,使夹紧部件41向外侧(图6以及图7的箭头方向)移动从而扩张扩展带13。由于由夹紧部件41的辊子43来夹持,即使由于扩张而在扩展带13产生不平衡的形变,通过辊子43的滚动,能够释放该形变,能够均匀地扩张扩展带13。Regarding the expansion of the expansion belt 13, at first, the end edges of the four sides of the expansion belt 13 are passed between the upper and lower frames 42 of each clamping part 41 of the expansion device 40, the upper and lower frames 42 are close to each other, and the upper and lower rollers are passed 43 to clamp the expansion band 13. Next, the clamp member 41 is moved outward (direction of arrows in FIGS. 6 and 7 ) to expand the extension band 13 . Even if an unbalanced deformation occurs in the expansion belt 13 due to expansion due to clamping by the rollers 43 of the clamp member 41, the deformation can be released by rolling the rollers 43, and the expansion belt 13 can be uniformly expanded.
如图8所示,通过像这样扩张扩展带13,只分裂粘接片12的向晶片1的外周侧探出的探出部12a。这里,还不分割晶片1,将扩展带13扩张到探出部12a被分裂的程度。As shown in FIG. 8 , by expanding the expansion tape 13 in this way, only the protruding portion 12 a of the adhesive sheet 12 protruding toward the outer peripheral side of the wafer 1 is split. Here, the wafer 1 is not divided, but the expanded tape 13 is expanded to the extent that the protruding portion 12a is divided.
在分裂探出部12a时,若至少对探出部12a进行冷却的话则容易分裂,因此优选。例如从表面侧直接、或经背面侧的扩展带13将冷却的空气等冷却流体喷出到探出部12a,由此能够冷却探出部12a。另外,也可以采用这样的方法:将扩展装置40整体收纳到冷却室内,将冷却室内的气氛温度设定为例如0℃~-30℃左右从而在冷却整体的状态下来进行扩张。When the protruding part 12a is split, it is preferable to cool at least the protruding part 12a because it is easy to split. For example, the protruding portion 12a can be cooled by spraying a cooling fluid such as cooled air directly from the front side or through the expansion belt 13 on the back side to the protruding portion 12a. Alternatively, a method may be adopted in which the entire expansion device 40 is housed in a cooling chamber, and the temperature of the atmosphere in the cooling chamber is set to, for example, about 0° C. to -30° C. to expand while cooling the whole.
当探出部12a被分裂时,如图8所示从探出部12a产生粘接片12的碎屑12b,但是即使这些碎屑12b飞散到晶片1上,也是附着在保护部件11上,上述保护部件11粘贴在晶片1的表面1a。When the protruding portion 12a is split, debris 12b of the adhesive sheet 12 is generated from the protruding portion 12a as shown in FIG. The protective member 11 is pasted on the surface 1 a of the wafer 1 .
(6)保护部件除去步骤(6) Protective parts removal procedure
接下来,如图9所示,除去配设在晶片1的表面1a的保护部件11。在除去的保护部件11的表面附着有分裂粘接片12时产生并飞散的、粘接片12的碎屑12b,除去了保护部件11的晶片1的表面1a是洁净的状态。Next, as shown in FIG. 9 , the protective member 11 disposed on the surface 1 a of the wafer 1 is removed. Fragments 12b of the adhesive sheet 12 generated and scattered when the adhesive sheet 12 was split adhered to the surface of the removed protective member 11, and the surface 1a of the wafer 1 from which the protective member 11 was removed was in a clean state.
(7)第二扩张步骤(7) Second expansion step
接下来,如图10所示,再次通过扩展装置40来扩张扩展带13。由此,从分割起点即上述改性层1c沿着分割预定线来分割晶片1,并且沿着分割预定线来断裂与器件2对应的粘接片12,如图11所示将晶片1单片化为在表面具有器件2的带有粘接片12的芯片3。Next, as shown in FIG. 10 , the expansion band 13 is expanded again by the expansion device 40 . Thereby, the wafer 1 is divided along the planned dividing line from the above-mentioned reformed layer 1c, which is the starting point of dividing, and the adhesive sheet 12 corresponding to the device 2 is broken along the planned dividing line, and the wafer 1 is separated into pieces as shown in FIG. 11 . It becomes a chip 3 with an adhesive sheet 12 having the device 2 on the surface.
(8)环状框架粘贴步骤(8) Ring frame pasting steps
接下来,在维持了分割晶片1而形成的一个个芯片3之间的间隔的状态下,如图12的(a)所示,将环状框架14粘贴到扩展带13的形成有黏着层的表面侧。环状框架14是这样的框架:其内周比粘接片12的外周大,且具有能够配设在夹紧部件41内侧的大小,该环状框架14由不锈钢等具有刚性的金属板形成。环状框架14以与晶片1为同心状的方式粘贴到扩展带13,由此分割晶片1而形成的多个芯片3为收纳在环状框架14的开口14a的状态。Next, in a state where the intervals between individual chips 3 formed by dividing the wafer 1 are maintained, as shown in FIG. surface side. The annular frame 14 is a frame whose inner circumference is larger than the outer circumference of the adhesive sheet 12 and has a size capable of being arranged inside the clamp member 41 , and is formed of a rigid metal plate such as stainless steel. The annular frame 14 is attached to the extension tape 13 so as to be concentric with the wafer 1 , and the plurality of chips 3 formed by dividing the wafer 1 are accommodated in the opening 14 a of the annular frame 14 .
然后,如图12的(b)所示,通过切断机50来切断环状框架14的背面侧的扩展带13的粘贴部分。由此,从扩展装置40搬出图13所示的结构,上述结构处于这样的状态:带有粘接片12的多个芯片3粘贴于在外周粘贴有环状框架14的扩展带13的中心。通过使用环状框架14来处理芯片3,并转移到下一工序(例如从扩展带13拾取带有粘接片12的芯片3的拾取工序)。Then, as shown in FIG. 12( b ), the portion to which the expansion tape 13 is pasted on the back side of the ring frame 14 is cut by the cutting machine 50 . Thereby, the structure shown in FIG. 13 in which a plurality of chips 3 with adhesive sheets 12 are attached to the center of the extension tape 13 with the ring-shaped frame 14 attached to the outer periphery is carried out from the extension device 40 . The chip 3 is processed by using the ring frame 14 and transferred to the next process (for example, a pick-up process of picking up the chip 3 with the adhesive sheet 12 from the expansion tape 13 ).
(9)一实施方式的作用效果(9) Action and effect of one embodiment
在如上所述的一实施方式的加工方法中,在将保护部件11配设到晶片1的表面1a的状态下完成第一扩张步骤,在该时刻对粘接片12的向晶片1的外周侧探出的探出部12a进行分裂。并且在分裂时产生的粘接片12的碎屑12b附着在保护部件11上。在实施了第一扩张步骤后,由于从晶片1除去附着有碎屑12b的保护部件11,所以能够完全防止碎屑12b附着在晶片1的表面1a。In the processing method of one embodiment as described above, the first expansion step is completed in the state where the protective member 11 is arranged on the surface 1a of the wafer 1, and at this point, the outer peripheral side of the adhesive sheet 12 toward the wafer 1 is The protruding protruding portion 12a is split. And debris 12 b of the adhesive sheet 12 generated at the time of splitting adheres to the protective member 11 . After the first expansion step is performed, since the protective member 11 to which the debris 12b is attached is removed from the wafer 1, the debris 12b can be completely prevented from adhering to the surface 1a of the wafer 1.
在本实施方式中,在实施了第二扩张步骤而将晶片1分割成多个芯片3之后,在维持了分割后的一个个芯片3之间的间隔的状态下将环状框架14粘贴到扩展带13。由此,扩展带13以扩张了的状态保持在环状框架14,从而维持分割后的一个个芯片3之间的间隔。因此通过对环状框架14进行处理,能够不使芯片3损伤地进行搬送等。In this embodiment, after the second expansion step is performed to divide the wafer 1 into a plurality of chips 3 , the annular frame 14 is attached to the expanded area while maintaining the intervals between the divided chips 3 . belt 13. As a result, the expanded tape 13 is held by the ring frame 14 in an expanded state, and the intervals between the divided chips 3 are maintained. Therefore, by handling the ring frame 14 , it is possible to carry out conveyance and the like without damaging the chips 3 .
另外,保护部件11是防止粘接片12的碎屑12b附着在晶片表面的保护部件,但是在开头的加工即背面磨削步骤之前将保护部件11粘贴到晶片表面,因此,在背面磨削步骤以后,在除去保护部件11前进行的加工中,存在这样的优点:通过保护部件11例如使保持工作台21、31不与表面1a直接抵接,能够将保护部件11活用为用于保护器件2的保护部件。In addition, the protective member 11 is a protective member that prevents the debris 12b of the adhesive sheet 12 from adhering to the wafer surface. Afterwards, in the processing before removing the protective member 11, there is such an advantage that the protective member 11 can be flexibly used as a protective device 2 by preventing the holding table 21, 31 from directly contacting the surface 1a by the protective member 11, for example. protection parts.
(10)其他实施方式(10) Other implementation modes
图14表示了使用与上述不同的扩展装置60来扩张扩展带13的样子。即,通过该扩展装置60也能够进行上述的第一扩张步骤和第二扩张步骤。FIG. 14 shows how the extension band 13 is expanded using an extension device 60 different from the above. That is, the above-mentioned first expansion step and second expansion step can also be performed by this expansion device 60 .
这时的扩展装置60构成为:在圆筒状的工作台61的周围,配设有通过气缸装置62能够升降的升降工作台63,在将上述环状框架14预先粘贴到经粘接片12粘贴有晶片1的扩展带13的状态下来放置晶片1。工作台31的内部配设有向扩展带13喷出冷却流体的喷嘴64。At this time, the expansion device 60 is configured as follows: around the cylindrical workbench 61, an elevating workbench 63 that can be raised and lowered by the air cylinder device 62 is arranged, and the above-mentioned annular frame 14 is pasted on the adhesive sheet 12 in advance. The wafer 1 is placed in a state where the extension tape 13 of the wafer 1 is pasted. Inside the table 31 is provided a nozzle 64 that sprays cooling fluid to the expansion belt 13 .
关于晶片1的扩张,首先,如图14的(a)所示,将升降工作台63的高度位置设定为与工作台61相同,将扩展带13上的晶片1装载到工作台61的上端面,将环状框架14装载到升降工作台63上。接下来,通过设置在升降工作台63的夹紧装置65来将环状框架14固定在升降工作台63。Regarding the expansion of the wafer 1, first, as shown in (a) of FIG. On the end face, the ring frame 14 is loaded on the lifting table 63 . Next, the ring frame 14 is fixed to the elevating table 63 by the clamp device 65 provided on the elevating table 63 .
并且,如图14的(b)所示,在通过从喷嘴64喷出冷却流体而使粘接片12冷却了的状态下,进行如下的第一扩张步骤:缩小气缸装置62,从而分裂粘接片12的探出部12a。当升降工作台63下降时,扩展带13向外侧扩张,从而粘接片12的探出部12a被分裂。And, as shown in FIG. 14( b ), in a state where the adhesive sheet 12 is cooled by spraying cooling fluid from the nozzle 64 , the following first expansion step is performed: shrinking the air cylinder device 62 to split the adhesive sheet 12 . Protruding portion 12a of sheet 12. When the elevating table 63 descends, the expansion belt 13 expands outward, and the protruding portion 12 a of the adhesive sheet 12 is split.
接下来,在从晶片1的表面除去保护部件11后,如图14的(c)所示,进行如下的第二扩张步骤:进一步使升降工作台63下降来扩张扩展带13,从而将晶片1分割成芯片3。Next, after removing the protective member 11 from the surface of the wafer 1, as shown in (c) of FIG. Split into chips3.
像这样通过扩展装置60也能够进行第一扩张步骤以及第二扩张步骤。由于在第一扩张步骤中在晶片1的表面1a粘贴有保护部件11,所以由第一扩张步骤产生的粘接片12的探出部12a的碎屑12b不会附着到晶片1的表面1a。The first expansion step and the second expansion step can also be performed by the expansion device 60 in this way. Since the protective member 11 is pasted on the surface 1a of the wafer 1 in the first expansion step, debris 12b of the protruding portion 12a of the adhesive sheet 12 generated in the first expansion step does not adhere to the surface 1a of the wafer 1 .
另外,在上述实施方式中,由基于照射激光光束而形成的改性层1c来构成沿着晶片1的分割预定线而形成的分割起点,但是分割起点例如也可以是形成于晶片1的表面1a侧的槽,该槽列举有由切削刀具形成的切削槽、或照射相对于晶片1具有吸收性的波长的激光光束而形成的激光加工槽等。In addition, in the above-mentioned embodiment, the division starting point formed along the planned division line of the wafer 1 is formed by the modified layer 1c formed by irradiation of the laser beam, but the division starting point may be formed on the surface 1a of the wafer 1, for example. The grooves on the side include cutting grooves formed by a cutting tool, laser processing grooves formed by irradiating a laser beam having an absorbing wavelength to the wafer 1, and the like.
另外,晶片1的背面磨削和形成分割起点的顺序是任意的,也可以是与上述实施方式相反,在形成分割起点后进行晶片1的背面磨削。In addition, the order of the backside grinding of the wafer 1 and the formation of the origin of division is arbitrary, and contrary to the above-described embodiment, the backside grinding of the wafer 1 may be performed after the formation of the origin of division.
Claims (2)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012206913A JP5977633B2 (en) | 2012-09-20 | 2012-09-20 | Processing method |
JPJP2012-206913 | 2012-09-20 | ||
JP2012-206913 | 2012-09-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103681492A CN103681492A (en) | 2014-03-26 |
CN103681492B true CN103681492B (en) | 2018-02-16 |
Family
ID=50318630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310414816.4A Active CN103681492B (en) | 2012-09-20 | 2013-09-12 | processing method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5977633B2 (en) |
KR (1) | KR101966997B1 (en) |
CN (1) | CN103681492B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6494360B2 (en) * | 2015-03-25 | 2019-04-03 | 株式会社ディスコ | Expansion unit |
JP6671794B2 (en) * | 2016-05-11 | 2020-03-25 | 株式会社ディスコ | Wafer processing method |
JP6710457B2 (en) * | 2016-06-01 | 2020-06-17 | 株式会社ディスコ | Expanded sheet, method for manufacturing expanded sheet, and method for expanding expanded sheet |
JP7216504B2 (en) * | 2018-09-03 | 2023-02-01 | 株式会社ディスコ | Expanding method |
JP7345328B2 (en) | 2019-09-13 | 2023-09-15 | 株式会社ディスコ | Processing method of workpiece |
JP7511981B2 (en) | 2020-08-05 | 2024-07-08 | 株式会社ディスコ | Method for manufacturing chip with adhesive film |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1534763A (en) * | 2003-03-11 | 2004-10-06 | ������������ʽ���� | Method for dividing semiconductor wafer |
JP2006229021A (en) * | 2005-02-18 | 2006-08-31 | Disco Abrasive Syst Ltd | Wafer dividing method |
CN101447411A (en) * | 2007-11-27 | 2009-06-03 | 株式会社迪思科 | Method for disconnecting adhesive bonding film with backmounted wafer and adhesive bonding film |
JP2011129606A (en) * | 2009-12-16 | 2011-06-30 | Furukawa Electric Co Ltd:The | Method of processing semiconductor wafer |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6134955A (en) * | 1984-07-26 | 1986-02-19 | Teikoku Seiki Kk | Automatic separation of silicon wafer |
JPS6155940A (en) * | 1984-08-27 | 1986-03-20 | Nec Corp | Pelletizing device of semiconductor wafer |
JP4478053B2 (en) * | 2005-03-29 | 2010-06-09 | 株式会社ディスコ | Semiconductor wafer processing method |
US7382647B1 (en) * | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
JP4971869B2 (en) * | 2007-05-11 | 2012-07-11 | 株式会社ディスコ | Adhesive film breaker |
JP2009272503A (en) * | 2008-05-09 | 2009-11-19 | Disco Abrasive Syst Ltd | Breaking device and breaking method for filmy adhesive |
KR20100052080A (en) * | 2008-11-10 | 2010-05-19 | 주식회사 하이닉스반도체 | Resistive memory device and method for manufacturing the same |
-
2012
- 2012-09-20 JP JP2012206913A patent/JP5977633B2/en active Active
-
2013
- 2013-09-04 KR KR1020130105964A patent/KR101966997B1/en active Active
- 2013-09-12 CN CN201310414816.4A patent/CN103681492B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1534763A (en) * | 2003-03-11 | 2004-10-06 | ������������ʽ���� | Method for dividing semiconductor wafer |
JP2006229021A (en) * | 2005-02-18 | 2006-08-31 | Disco Abrasive Syst Ltd | Wafer dividing method |
CN101447411A (en) * | 2007-11-27 | 2009-06-03 | 株式会社迪思科 | Method for disconnecting adhesive bonding film with backmounted wafer and adhesive bonding film |
JP2011129606A (en) * | 2009-12-16 | 2011-06-30 | Furukawa Electric Co Ltd:The | Method of processing semiconductor wafer |
Also Published As
Publication number | Publication date |
---|---|
JP2014063812A (en) | 2014-04-10 |
JP5977633B2 (en) | 2016-08-24 |
CN103681492A (en) | 2014-03-26 |
KR101966997B1 (en) | 2019-04-08 |
KR20140038305A (en) | 2014-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103681491A (en) | Processing method | |
CN103681490B (en) | processing method | |
US8486806B2 (en) | Method for machining wafers by cutting partway through a peripheral surplus region to form break starting points | |
CN103681492B (en) | processing method | |
US9905453B2 (en) | Protective sheeting for use in processing a semiconductor-sized wafer and semiconductor-sized wafer processing method | |
JP2011124266A (en) | Method of processing wafer | |
JP2010186971A (en) | Wafer processing method | |
CN108987268A (en) | The processing method of chip | |
CN103681438B (en) | processing method | |
CN108022876A (en) | The processing method of chip | |
CN107039342A (en) | The processing method of chip | |
JP5534793B2 (en) | Wafer processing method | |
JP6298699B2 (en) | Wafer processing method | |
JP2012222310A (en) | Method for processing wafer | |
JP2005260154A (en) | Method of manufacturing chip | |
JP6045426B2 (en) | Wafer transfer method and surface protection member | |
JP2010093005A (en) | Processing method of wafer | |
JP6137999B2 (en) | Wafer processing method | |
JP5545624B2 (en) | Wafer processing method | |
JP6633447B2 (en) | Wafer processing method | |
JP2019009219A (en) | Processing method of wafer | |
JP2011124264A (en) | Wafer processing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |