Summary of the invention
In view of this, the invention reside in and propose a kind of display device, driving transistors in described display device makes four end elements into, make driving transistors can be according to the size of bucking voltage the numerical value with modulation critical voltage, adjust by this drive current of output to change the brightness of light emitting diode.
The embodiment of the present invention provides a kind of display device, and described display device has light emitting diode and driver module.Described driver module is in order to drive light emitting diode, and driver module comprises the first on-off circuit, second switch circuit and driving transistors.The first on-off circuit optionally writes gray scale voltage the first electric capacity, and second switch circuit optionally writes bucking voltage the second electric capacity.Driving transistors couples respectively light emitting diode, the first electric capacity and the second electric capacity, and driving transistors is controlled by gray scale voltage and bucking voltage, adjusts according to this drive current of exporting to light emitting diode.Wherein, it is poor that gray scale voltage is adjusted grid and the source voltage of driving transistors, and bucking voltage is adjusted the critical voltage of driving transistors.
In one embodiment of the invention, when the brightness of light emitting diode is during lower than the first threshold value, bucking voltage is to reduce the critical voltage of driving transistors, increase according to this drive current, and when the brightness of light emitting diode is during higher than the second threshold value, bucking voltage is to improve the critical voltage of driving transistors, reduces according to this drive current.At this, described how group pixel groups are with image acquiring device shooting picture, and via treating apparatus, judge in the picture photographing in image acquiring device, and whether the brightness of the light emitting diode in each group pixel groups is lower than the first threshold value or higher than the second threshold value.In addition, the first on-off circuit and second switch circuit are switching transistor, second switch circuit couples offset data line, the bucking voltage that offset data line is exported in order to transmission compensation control module, and compensation control module is adjusted bucking voltage according to the judged result for the treatment of apparatus.Wherein, the first on-off circuit couples luma data line, the gray scale voltage that luma data line is exported in order to transmit GTG control module, and the first on-off circuit and second switch circuit are controlled by same sweep trace and conducting simultaneously or cut-off.
In another embodiment of the present invention, the first on-off circuit and second switch circuit are switching transistor, the first on-off circuit and second switch circuit couple same data line, described data line couples respectively GTG control module and compensation control module, and described data line timesharing ground transmits gray scale voltage or bucking voltage.Wherein, the first on-off circuit and second switch circuit are controlled by respectively the first sweep trace and the second sweep trace, when the first sweep trace is controlled the first on-off circuit conducting, the gray scale voltage that data line transmission GTG control module is exported, when the second sweep trace is controlled second switch circuit turn-on, the bucking voltage that data line transmission compensation control module is exported.
The invention reside in the light-dimming method that proposes a kind of display device, can judge the brightness of display frame, modulate adaptively the numerical value of the critical voltage of driving transistors, adjust by this drive current of driving transistors output to change the brightness of light emitting diode.
The embodiment of the present invention provides a kind of light-dimming method of display device, described display device has a plurality of pixel groups, each group pixel groups has light emitting diode and driver module, driver module has the first on-off circuit, second switch circuit and driving transistors, and driving transistors is controlled by gray scale voltage and bucking voltage, adjust according to this drive current of exporting to light emitting diode.Described method comprises the following steps: that whether the brightness that judges light emitting diode is lower than the first threshold value or higher than the second threshold value; When the brightness of light emitting diode is during lower than the first threshold value, adjust bucking voltage to reduce the critical voltage of driving transistors, increase according to this drive current; When the brightness of light emitting diode is during higher than the second threshold value, adjust bucking voltage to improve the critical voltage of driving transistors, reduce according to this drive current.
In sum, the display device that the embodiment of the present invention provides and light-dimming method thereof, can export to according to the brightness adjustment of display frame the bucking voltage of driving transistors, make driving transistors can be according to the size of bucking voltage the numerical value with modulation critical voltage, adjust by this drive current of driving transistors output to change the brightness of light emitting diode.Thus, the display frame of described display device can reduce or avoid the problem of brightness disproportionation, thereby improves user's viewing quality.
For enabling further to understand feature of the present invention and technology contents, refer to following about detailed description of the present invention and accompanying drawing, but these explanations with appended graphic be only for the present invention is described, but not claim scope of the present invention is done to any restriction.
Accompanying drawing explanation
Fig. 1 shows the circuit diagram of the display device of prior art.
Fig. 2 A shows the local circuit schematic diagram according to the display device of one embodiment of the invention.
Fig. 2 B shows the partial cutaway schematic according to the display device of one embodiment of the invention.
Fig. 3 shows the local circuit schematic diagram according to the display device of another embodiment of the present invention.
Fig. 4 A shows the circuit diagram according to the driving transistors of one embodiment of the invention.
Fig. 4 B shows the graph of relation of drive current, gray scale voltage and bucking voltage according to one embodiment of the invention.
Fig. 4 C shows according to the critical voltage of the driving transistors of one embodiment of the invention and the graph of relation of bucking voltage.
Fig. 5 shows the process flow diagram according to the light-dimming method of the display device of one embodiment of the invention.
[main element symbol description]
1: 10: the first on-off circuits of display device
12: 14: the first electric capacity of second switch circuit
Within 16: the second, electric capacity 18: driving transistors
20: light emitting diode S1: sweep trace
D1: luma data line D2: offset data line
Vdd: high voltage end Vss: low-voltage end
302: glass substrate 304: adhesion layer
306: grid layer 308: insulation course
310: channel layer 312: etch stop layer
314: electrode layer 316: protective seam
318: flatness layer 320: electrode layer
322: insulation course 324: LED layers
326: electrode layer
4: 40: the first on-off circuits of display device
42: second switch circuit 44: electric capacity
46: electric capacity 48: driving transistors
50: light emitting diode S2: sweep trace
S3: sweep trace D3: data line
6: driving transistors VG: the first grid is extreme
VG ': the extreme VS of second gate: source terminal
VD: gate terminal Id: drive current
S70 ~ S74: steps flow chart 9: display device
90: switching transistor 92: electric capacity
94: driving transistors 96: light emitting diode
Scan: sweep trace Data: data line
Embodiment
Please also refer to Fig. 2 A and Fig. 2 B, Fig. 2 A shows the local circuit schematic diagram according to the display device of one embodiment of the invention, and Fig. 2 B shows the partial cutaway schematic according to the display device of one embodiment of the invention.As shown in the figure, display device 1 has a plurality of pixel groups, at least has light emitting diode 20 and driver module (comprising component symbol 10,12,14,16,18) in each pixel groups, makes driver module can drive light emitting diode 20.Specifically, the first on-off circuit 10 in driver module couples respectively luma data line D1, the first electric capacity 14 and driving transistors 18, and second switch circuit 12 couples respectively offset data line D2, the second electric capacity 16 and driving transistors 18.Driving transistors 18 is four end elements, the first grid of driving transistors 18 couples extremely respectively the first on-off circuit 10 and the first electric capacity 14, the second gate of driving transistors 18 couples extremely respectively second switch circuit 12 and the second electric capacity 16, the drain electrode end of driving transistors 18 couples high voltage end Vdd, and the source terminal of driving transistors 18 couples low-voltage end Vss through light emitting diode 20.Below with regard to each element in display device 1, do further explanation respectively.
The first on-off circuit 10 is controlled by sweep trace S1 and optionally conducting or cut-off, and when the first on-off circuit 10 is switched on, the gray scale voltage of the upper carrying of luma data line D1 just can write the first electric capacity 14 smoothly.In practice, sweep trace S1 can be connected to the gate drivers (not shown) in display device 1, and whether determines conducting the first on-off circuit 10 by gate drivers.At this, although Fig. 2 A be take transistor and depicted a kind of possible embodiment of the first on-off circuit 10 as example, the first on-off circuit 10 of the present invention should not be limited with transistor.For instance, the first on-off circuit 10 can be formed or be selected other on-off element to carry out alternative switch transistor by a plurality of transistor, in person of an ordinary skill in the technical field, can optionally freely design.
Please continue the A referring to Fig. 2, second switch circuit 12 is controlled by sweep trace S1 and optionally conducting or cut-off equally, and when second switch circuit 12 is switched on, the bucking voltage of the upper carrying of offset data line D2 just can write the second electric capacity 16 smoothly.In this embodiment, the control signal of carrying on sweep trace S1 is being controlled the first on-off circuit 10 and second switch circuit 12 simultaneously, be that gate drivers (not shown) controls whether write gray scale voltage and bucking voltage simultaneously, but the present invention should be as limit.Please note, the present embodiment only shows a kind of possible circuit connecting relation, yet as long as driving transistors 18 still can be adjusted drive current by gray scale voltage and bucking voltage, in person of an ordinary skill in the technical field, also can become other equivalent circuit connecting relations by appropriate change.
In order more to know entity structure and the element characteristic of driving transistors 18, refer to the diagrammatic cross-section of the shown driving transistors 18 of Fig. 2 B.First, substrate 302 can be glass or plastic material, and on substrate 302, can be provided with adhesion layer 304 be beneficial to arrange other functional layers on substrate 302.The grid layer 306 of driving transistors 18 is arranged on adhesion layer 304, and on grid layer 306 and adhesion layer 304, insulation course 308 is set again.Channel layer 310 is arranged on insulation course 308, and also has etch stop layer 312 on the insulation course 308 of part and channel layer 310, to avoid the structure of etch stop layer 312 belows to damage in etching process.Grid layer 306 can be that the metal/alloy such as the copper, aluminium, molybdenum, titanium of single or multiple lift form.Adhesion layer 304, insulation course 308 and etch stop layer 312 can be oxide (SiOx) or nitride (SiNx) structures of the silicon of single or multiple lift.
Then, electrode layer 314 is arranged on etch stop layer 312, and the channel layer 310 of contact portion.In practice, in Fig. 2 B, the electrode layer 314 in contact channels layer 310 left side can be considered the drain electrode of the driving transistors 18 in Fig. 2 A, and the electrode layer 314 in left side can be electrically connected to high voltage end Vdd.In addition, in Fig. 2 B, the electrode layer 314 on contact channels layer 310 right side can be considered the source electrode of the driving transistors 18 in Fig. 2 A.After electrode layer 314 tops arrange protective seam 316, in order to make ensuing technique more smooth, in practice, also one deck flatness layer 318 can be set, to form a comparatively smooth plane.Electrode layer 314 can be that the metal/alloy such as the copper, aluminium, molybdenum, titanium of single or multiple lift form.Flatness layer 318 materials can be organic resins.
In general, light emitting diode in Fig. 2 A 20 is right electrodes layer 320, LED layers 324 and the direct stacked region (the namely light-emitting zone on panel) of electrode layer 326 in Fig. 2 B, and in Fig. 2 B, left electrodes layer 320 top also have the namely non-luminous region on panel of insulation course 322().At this, LED layers 324 can be that Organic Light Emitting Diode material is made, and electrode layer 320 and electrode layer 326 are respectively anode and the negative electrode of LED layers 324.In other words, in fact light emitting diode 20 can be a kind of Organic Light Emitting Diode (OLED), and electrode layer 320 and electrode layer 326 can for example, be made by transparent conductive material (ITO) or other suitable materials.Insulation course 322 materials can be organic resins.
Note that in Fig. 2 B respectively the electrode layer 320 shown with two blocks, the electrode layer 314(in electrode layer 320 contact channels layer 310 right side on right side is the source electrode of driving transistors 18), and the electrode layer 320 in left side is positioned on channel layer 310.From semi-conductive principle, when the electrode layer 320 in left side provides positive voltage, electronics forms electric current channel compared with easy gathering, and the critical voltage of driving transistors 18 will be reduced, and the drive current of driving transistors 18 outputs can improve thereupon.Contrary, when the electrode layer 320 in left side provides negative voltage, electronics is not more easily gathered into current channel, and the critical voltage of driving transistors 18 will be improved, and the drive current of driving transistors 18 outputs can decrease.
Accordingly, by the design of the driving transistors 18 in the present embodiment, make each pixel groups in display device 1 not need significantly to increase transistorized quantity, also can be simply by the bucking voltage being stored in the second electric capacity 16, adjust the critical voltage of driving transistors 18, thereby adjusted the drive current of the light emitting diode 20 that driving transistors 18 exports to.
In order to enumerate other equivalent electrical circuit annexation of display device 1, the present invention has also disclosed another kind of possible embodiment.Refer to Fig. 3, Fig. 3 shows the local circuit schematic diagram according to the display device of another embodiment of the present invention.As shown in Figure 3, display device 4 can have a plurality of pixel groups equally, at least has light emitting diode 50 and driver module (comprising component symbol 40,42,44,46,48) in each pixel groups, makes driver module can drive light emitting diode 50.Identical with last embodiment, circuit connecting relation and the mode of operation of electric capacity 44, electric capacity 46, driving transistors 48 and light emitting diode 50, the present embodiment does not repeat them here.Different from last embodiment, the first on-off circuit 40 is connected to same data line D3 with second switch circuit 42, and is controlled by respectively different sweep trace S2, S3.
Specifically, data line D3 can timesharing ground transmit gray scale voltage and bucking voltage, and the period of transmitting gray scale voltage or bucking voltage should lucky corresponding sweep trace S2, S3 be controlled the period of the first on-off circuit 40 or 42 conductings of second switch circuit.For instance, the first on-off circuit 40 is controlled by sweep trace S2 and optionally conducting or cut-off, and when the first on-off circuit 40 is switched on, data line D3 should transmit gray scale voltage just, makes gray scale voltage just can write smoothly electric capacity 44.On the other hand, after gray scale voltage writes electric capacity 44 and when second switch circuit 42 is switched on, data line D3 can transfer to transmit bucking voltage, makes bucking voltage just can write smoothly electric capacity 46.At this, the present embodiment does not limit order or the delivery time length that transmits gray scale voltage and bucking voltage, in person of an ordinary skill in the technical field, can optionally freely design.
Certainly, although Fig. 3 be take equally transistor and depicted a kind of possible embodiment of the first on-off circuit 40 and second switch circuit 42 as example, the first on-off circuit 40 of the present invention and second switch circuit 42 should not be limited with transistor equally.
Example with Fig. 3 reality, in order to judge whether display device 4 produces the problem of picture brightness skewness (mura effect), when carrying out QC or detecting, can also first utilize one group of image acquiring device (not shown) to take the picture of display device 4 when luminous, described image acquiring device for example can be selected CCD camera or other suitable photographic goods.Then, also can observe or judge in the picture photographing in image acquiring device via treating apparatus (not shown), whether the brightness of the light emitting diode 50 in each group pixel groups meets standard, and for example whether brightness is lower than the first threshold value (too dark) or no higher than the second threshold value (too bright).Certainly, the first threshold value and the second threshold value are can be in advance selected voluntarily by user, and the first threshold value can equate with the second threshold value, or are respectively lower limit and the upper limit in scope interval, and the present embodiment is not limited at this.
In practice, the first threshold value and the second threshold value can be arranged in a look-up table in advance, and described look-up table can record the relation of the corresponding bucking voltage of brightness.For instance, when treating apparatus judges that light emitting diode 50 in some pixel groups is too dark or when too bright, can find out the bucking voltage that is suitable for compensation for drive transistor 48 by look-up table, and be stored in electric capacity 46 via second switch circuit 42.Accordingly, the critical voltage of driving transistors 48 can be dynamically adjusted, the brightness of described pixel groups in compensation after all in an acceptable scope.
Data from actual measurement, please also refer to Fig. 4 A, Fig. 4 B and Fig. 4 C, Fig. 4 A shows the circuit diagram according to the driving transistors of one embodiment of the invention, Fig. 4 B shows the graph of relation of drive current, gray scale voltage and bucking voltage according to one embodiment of the invention, and Fig. 4 C shows according to the critical voltage of the driving transistors of one embodiment of the invention and the graph of relation of bucking voltage.Driving transistors 6 has the extreme VG of the first grid, the extreme VG ' of second gate, source terminal VS and gate terminal VD, the extreme VG of the first grid is in order to couple the first on-off circuit and the electric capacity that stores gray scale voltage of last embodiment, and the extreme VG ' of second gate is in order to couple the second switch circuit and the electric capacity that stores bucking voltage of last embodiment.
From the real data of Fig. 4 B, in the situation that gray scale voltage is constant (for example, when VG is 8V), the bucking voltage that the extreme VG ' of second gate receives is higher, and drive current Id obviously can be along with raising.In addition, real data from Fig. 4 C, the bucking voltage that the extreme VG ' of second gate receives is higher, the critical voltage Vth of driving transistors 6 can be lower, from transistorized base current formula, the lower drive current of critical voltage Vth Id will inevitably be higher, and the higher drive current of critical voltage Vth Id can be along with lower.By this, the driving transistors 6 that the present embodiment provides can be exported to the drive current of light emitting diode easily with different bucking voltage adjustment.
In order to make person of an ordinary skill in the technical field can understand spirit of the present invention, below the light-dimming method of display device of the present invention collocation display device is illustrated more clearly in.
Please also refer to Fig. 3 and Fig. 5, Fig. 5 shows the process flow diagram according to the light-dimming method of the display device of one embodiment of the invention.As shown in the figure, in step S70, the present embodiment can first utilize one group of image acquiring device (not shown) to take the picture of display device 4 when luminous, and judged in the picture photographing in image acquiring device by treating apparatus (not shown), whether the brightness of the light emitting diode 50 in each group pixel groups is lower than the first threshold value (too dark) or no higher than the second threshold value (too bright).
In step S72, when treating apparatus judges that light emitting diode 50 in some pixel groups is too dark, the bucking voltage of exporting to electric capacity 46 can be improved, reduce according to this critical voltage of driving transistors 48, make the drive current raising of light emitting diode 50 of flowing through, thereby increase the brightness of light emitting diode 50.In step S74, when treating apparatus judges that light emitting diode 50 in some pixel groups is too bright, the bucking voltage of exporting to electric capacity 46 can be reduced, improve according to this critical voltage of driving transistors 48, make the drive current reduction of light emitting diode 50 of flowing through, thereby reduce the brightness of light emitting diode 50.
In sum, the display device that the embodiment of the present invention provides and light-dimming method thereof, can export to according to the brightness adjustment of display frame the bucking voltage of driving transistors, make driving transistors can modulate according to the size of bucking voltage the numerical value of critical voltage, adjust by this drive current of driving transistors output to change the brightness of light emitting diode.Thus, the display frame of described display device can reduce or avoid the problem of brightness disproportionation, thereby improves user's viewing quality.
By the above preferably detailed description of specific embodiment, hope can be known description feature of the present invention and spirit more, and not with above-mentioned disclosed preferred specific embodiment, category of the present invention is limited.On the contrary, its objective is that hope can contain in the category of the scope of the claims of being arranged in of various changes and tool equality institute of the present invention wish application.