CN103647532A - Low-voltage folding-type current signal modulator - Google Patents
Low-voltage folding-type current signal modulator Download PDFInfo
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- CN103647532A CN103647532A CN201310612797.6A CN201310612797A CN103647532A CN 103647532 A CN103647532 A CN 103647532A CN 201310612797 A CN201310612797 A CN 201310612797A CN 103647532 A CN103647532 A CN 103647532A
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Abstract
A low-voltage folding-type current signal modulator is provided. The low-voltage folding-type current signal modulator is used for decreasing the distortion of an output signal. The signal modulator is with a differential amplifier used for receiving a first input signal and converting the same into current, a current amplifier which is provided with a low-impedance input and provides an amplified current signal, and a differential pair circuit which receives a second input signal and modulates the amplified current signal by the second signal.
Description
Technical field:
The present invention relates to a kind of apparatus and method for signal modulation.More specifically, the present invention relates to a kind of low-voltage, the apparatus and method of electric current folded signal modulator circuit.
Background technology:
Signal modulator circuit multiplies each other first signal and secondary signal, and can be used to the frequency component of first signal from a frequency band conversion to another frequency band.For example, a signal modulator circuit can be used for by a high-frequency carrier signal (secondary signal) modulation low frequency baseband signal (first signal), for example, as telephone signal is modulated to a higher frequency carrier signal (carrier signal of 2 megahertzes) from the frequency component of approximately 300-3400 hertz.A modulator also can be used to, in long Distance Transmission, a low-frequency sound signal is converted to high frequency radio carrier signal.The process that a signal is modulated to a higher frequency carrier signal is called draws conversion.Signal modulator also can be used for being transformed into lower frequency by signal is drop-down.
A signal modulator circuit 10 of previously known, is commonly referred to Gilbert cell mixer, shown in the principle schematic table of Fig. 1.Gilbert cell mixer 10 comprises: trsanscondutance amplifier 12 and cross-linked differential pair 14.Gilbert cell mixer 10 receives difference first signal (V
iN +-V
iN -) and secondary signal (V
lO +-V
lO -), and differential output signal (V is provided
oUT +-V
oUT -).First signal (V
iN +-V
iN -) can be baseband signal, and secondary signal (V
lO +-V
lO -) can be the high-frequency modulation signal being produced by a local oscillator.Output signal (V
oUT +-V
oUT -) be the output of modulation.
The collector coupled of transistor 15 is to transistor 17 and 18, and base stage is coupled to input voltage V
iN +, emitter-coupled is to the first terminal of resistor 13A.The collector coupled of transistor 16 is to the emitter of transistor 19 and 20, and base stage is coupled to input V
iN -, emitter-coupled is to the first terminal of resistor 13B.The second terminal of resistance 13A and 13B is by current source 11 coupling groundings.The base stage of transistor 17 is coupled to input V
lO +and collector electrode is coupled to supply voltage V by resistance 21
cC.The base stage of transistor 18 is coupled to input V
lO -and collector electrode is coupled to supply voltage V by resistor 22
cC.The base stage of transistor 19 is coupled to input V
lO -and collector electrode is coupled to supply voltage V by resistance 21
cC.The base stage of transistor 20 is coupled to input V
lO +, and collector electrode is coupled to supply voltage V by resistor 22
cC.Transistor 17 and 20 provides respectively modulated output signal V
oUT +and V
oUT -.Trsanscondutance amplifier 12 is by differential signal (V
iN +-V
iN -) be converted to differential current signal I
x=(I
x +-I
x -).Cross-couplings differential pair circuit 14 is by secondary signal (V
lO +-V
lO -) modulation differential current signal (I
x +-I
x -), produce differential output signal (V
oUT +-V
oUT -).
For example, for many application programs (, battery powered mobile phone), hope can realize a signal modulator, consumes the least possible power, thereby reduces to greatest extent its energy demand.The power consumption of a signal modulator circuit is proportional with the supply voltage to circuit energy supply.Therefore, use lower supply voltage advantageously to reduce the power consumption of circuit.But intrinsic restriction arranges the lower limit of circuit power source voltage on Gilbert cell mixer.
For example, in circuit 10, supply voltage V
cCcan be represented as: V
cC=V
r-21+ V
cE-17+ V
cE-15+ V
r-13A+ V
i-11(1)
V wherein
r-21the voltage drop at resistance 21 two ends, V
cE-17the collector emitter voltage of transistor 17, V
cE-15the collector emitter voltage of transistor 15, V
r-13Athe voltage drop at resistor two ends, V
i-11it is the voltage drop at the two ends of current source 11.When the collector emitter voltage of transistor 17 and 15 is lower than V
cE-SATfor example, when (, 0.4 volt), they enter saturation condition.If V
iN +there are the direct voltage of 1.4 volts and one ± 0.25 amplitude of oscillation voltage (that is, V
iN +have maximum of 1.65 volts and a minimum of 1.15 volts), V
cE-15should compare V
cE-SATadd amplitude of oscillation voltage V
iN +larger.Therefore, V
cE-15be at least 0.65 volt, to prevent that transistor 15 from entering saturation condition and causing V
oUTon distortion.If V
lO +the amplitude of oscillation voltage that has a 200mV, then V
cE-17should be at least 0.60 volt (is V
cE-SAT200 millivolts), to prevent that transistor 17 from entering saturation condition.V
r-21can be, for example, 0.5 volt; V
i-11normally 0.4～0.6 volt, V
r-13Aequal V
iN +the amplitude of oscillation voltage of (for example, 0.25 volt).For these exemplary signal values, V
cCmust be at least 2.4-2.6 volt.
If use lower supply voltage, output signal V
oUT +and V
oUT -may not have enough spaces to reach its peak amplitude.In addition, low supply voltage may cause the transistor in circuit 10 saturated, produces a nonlinear output response, causes the distortion (V of output signal
oUT +-V
oUT -).Along with low supply voltage, the large saturation value of transistor on circuit 10 is V
iN +and V
iN -.Therefore, reduce supply voltage and cause a balance: save power supply, it is more that supply voltage reduces, and the distortion occurring in output signal is more.Therefore, V
iN +and V
iN -peak amplitude and output signal V
oUT +and V
oUT -maximum distortion to require constraints be the lower limit that the supply voltage of circuit 10 is set.
Yet it is desirable that signal modulator circuit is provided, than the Gilbert cell mixer circuitry consumes of previously known power still less, as circuit 10.Especially, it is also desirable providing the signal modulator circuit of the low power consumption being operated on low supply voltage.
Providing signal modulator circuit to produce an output signal will be also desirable, and it reduces the distortion in low supply voltage.
Signal modulator circuit or desirable is provided, and it allows input voltage fluctuation larger in low supply voltage.
Summary of the invention:
An object of the present invention is to provide the signal modulator circuit of the low power consumption being operated on low supply voltage.
Another object of the present invention is to provide signal modulator circuit and produces an output signal, reduces the distortion in low supply voltage.
Another object of the present invention is to provide the circuit of signal modulator, allows input voltage fluctuation larger in low supply voltage.
Technical solution of the present invention:
Object of the present invention and some other object are reached by a kind of signal modulator circuit, comprise a trsanscondutance amplifier, a current amplifier and a differential pair circuit.Trsanscondutance amplifier converts the first voltage signal to a current signal.Current amplifier has low input impedance and current output signal is provided.Differential pair circuit, by the current output signal of secondary signal modulated current amplifier, produces the warbled output signal of a minimum distortion.Modulator circuit of the present invention can be operated in low supply voltage and not destroy the integrality of modulation signal.
Method of the present invention comprises: produce a current signal changing with first signal, and amplified current signal, and modulate amplified current signal by secondary signal, produce the output signal of a modulation.
Contrast patent documentation: CN202772857U pulse width modulator equipment 201220160793.X
Accompanying drawing explanation:
By more detailed description above object and advantages of the present invention, take corresponding accompanying drawing explanation below, the reference symbol of each element is all indicated in the drawings.
Fig. 1 is a block diagram of the Gilbert cell mixer signal modulator circuit of prior art;
Fig. 2 is a block diagram of the illustrative embodiment of signal modulator in accordance with the principles of the present invention;
Fig. 3 is a schematic diagram of the illustrative embodiment of signal modulator in accordance with the principles of the present invention;
Fig. 4 A and Fig. 4 B are the illustrative waveforms figure of signal modulator in Fig. 3;
Fig. 5 is a schematic diagram of another illustrative embodiment of signal modulator in accordance with the principles of the present invention.
Embodiment:
The present invention has improved the Gilbert cell mixer in Fig. 1.With reference to Fig. 2, the illustrative embodiment of signal modulator circuit is in accordance with the principles of the present invention described.Signal modulator circuit 30 comprises trsanscondutance amplifier 24, current amplifier 26, differential pair circuit 28.Trsanscondutance amplifier 24 is by first signal V
iNfrom voltage signal, be converted to current signal I
a.Current amplifier 26 has low input impedance and amplified current signal I
a, for differential pair circuit 28 provides signal I
b.Differential pair circuit 28 is by secondary signal V
lOmodulation amplified current signal I
b, produce the output signal V of a modulation
oUT.Just as described in more detail below, signal modulator 30 can be operated in low supply voltage, because supply voltage is applied to trsanscondutance amplifier 24 two ends, in parallel with differential pair circuit 28 and current amplifier 26.Signal modulator 30 also produces the output signal V of the modulation of low distortion
out, because current amplifier 26 has low input impedance.
With reference to Fig. 3, an illustrative principles figure of Fig. 2 circuit has been described.Signal modulation circuit 30 receives differential signal V
iN=(V
iN +-V
iN -) and secondary signal V
lO=(V
lO +-V
lO -), and differential output signal V is provided
oUT=(V
oUT +-V
oUT -).Signal V
iNmay be low-frequency baseband signal and signal V
lOit may be a high-frequency carrier signal.Signal V
iN, V
lOand V
oUTmay be time varying signal (being alternating current).
Current source 44 and 46 is exported in fact identical electric current I
2.The electric current I that current source 32 can be exported
3to be equal to or less than electric current I
2(as I
3≈ 0.9512).Trsanscondutance amplifier 24 is by difference first signal V
iN=(V
iN +-V
iN -) convert difference current I to
a=(I
a +-I
a -).
As long as transistor 36 and 38 is unsaturated, electric current I
awith V
iNlinear change.If transistor 36 or 38 is saturated, current signal I
a=(I
a +-I
a -) and output signal V
oUTmay distortion.In linear work district, I
a=(I
a +-I
a -) and V
iNbetween relation can be expressed as: (I
a +-
i a -)=K1 (V
iN +-V
iN -) (2).
Wherein K1 is the amplification coefficient of trsanscondutance amplifier 24.V based on circuit parameter
iNkeep within the specific limits this relation.For example,, if V
iN +and V
iN -having maximum is 1.45 volts, I
2=360 μ A, I
3=340 μ A, I
4=I
5=25 μ A, resistance 34A and 34B equal 2K Ω, and resistance 48 and 58 all equals 8K Ω, electric current I
awith V
iNlinear change is V
iN=(V
iN +-V
iN -)≤500mV peak-to-peak value.Below by the effect of the circuit parameter in the range of linearity of the work of discussion.
Electric current I
1 +and I
1 -it is the collector current of transistor 36 and 38.If V
iN +rise and surpass V
iN -, electric current I
1 +increase+Q and electric current I
1 -reduction-Q.Electric current I
1 +in the response of increase+Q, electric current I
a +reduction-Q, because the electric current I of current source 44 outputs
2constant.Electric current I
1in the response of minimizing-Q, electric current I
a -increase+Q, because the electric current I of current source 46 outputs
2constant.
On the other hand, if V
iN -increase and surpass V
iN +, electric current I
1 -increase+Q and electric current I
1 +reduce-Q.In electric current I
1 +reduce in the response of Q, because the electric current I of current source 44 outputs
2constant, electric current I
a +increase+Q.In electric current I
1 -the response of increase+Q, electric current I
a -reduce-Q, because the electric current I of current source 46 outputs
2constant.Between trsanscondutance amplifier 24 and current amplifier 26 with V
iNit is folding that the current source 44 changing and 46 current transfer are called as electric current.Electric current I
a=(I
a +-I
a -) be electric current folded signal.
If transistor 36 is saturated or transistor 38 is saturated, may there is distortion in trsanscondutance amplifier 24.If be reduced to the V of transistor 36 under the collector emitter voltage of transistor 36
cE-SAT(for example, 0.4 volt), transistor 36 is saturated.If be reduced to the V of transistor 38 under the collector emitter voltage of transistor 38
cE-SAT(for example, 0.4 volt), transistor 38 is saturated.Emitter resistor 34A and 34B are incorporated into the emitter-base bandgap grading negative feedback of differential amplifier, make voltage linear be transformed into electric current, and reduce signal I
a +and I
a -distortion.But emitter resistance device 34A and 34B are selectable and can omit from circuit 30.
Z wherein
nODE40and Z
nODE42the respectively impedance on representation node 40 and 42, β is each current gain in transistor 50 and 60, g
meach mutual conductance in transistor 50 and 60, R
48the resistance value of resistance 48, R
58be the resistance value of resistor 58, N is the ratio of the base-emitter junction area of transistor 52 to 50 and transistor 62 to 60.If transistor 50,52,60 and 62 is field effect transistor, N is transistor 52 to 50 and the grid width of transistor 62 to 60 and the ratio of length.
Shown in (3) and (4), selected transistor 50 and 60 currentgainβ are greater than the value (for example, β ≈ 100-200 and N=3) of N substantially, so, the impedance ratio R at node 40 places
48add 1/g
mvalue little, the impedance ratio R at node 42 places
58add 1/g
mvalue little.The electric currents of resistor 48 and 58 value and current source 54 and 64 outputs select, to such an extent as to voltage on node 40 and 42 enough height all the time, thereby prevent that transistor 36 and 38 is saturated.In other words, the collector emitter voltage of transistor 36 is greater than the V of transistor 36
cE-SATthereby, preventing that transistor 36 is saturated, the collector emitter voltage of transistor 38 should be greater than the V of transistor 38
cE-SATthereby, prevent that transistor 38 is saturated.For example, resistor 48 and 58 resistance value are about 18k Ω, I
2may be 360 μ A, I
3may be 340 μ A, I
4and I
5be about 25 μ A, avoid transistor 36 and 38 saturated, V wherein
cE-SAT=0.2 volt.
Transistor 50 and resistor 48 comprise the circuit of a negative feedback loop, have reduced the impedance at node 40 places.Small signal impedance at node 40 places can be expressed as:
Δ v wherein
40the small signal variation of the voltage at node 40 places, Δ i
40it is the small signal variation that flows into the electric current of node 40.Change electric current Δ i
40produce corresponding changes delta v
40.In fact, if flow into the electric current of node 40, increase, the electric current by resistor 48 increases, and causes the base current of transistor 50 and 52 to increase.Result is that the collector current of transistor 50 increases, and makes the voltage at node 40 places push the speed slack-off.On the other hand, if flow into the electric current of node 40, reduce, the electric current by resistor 48 reduces, and the base current of transistor 50 and 52 is reduced.Consequently, the collector current of transistor 50 reduces, and the speed that the voltage at node 40 places reduces is slack-off.Negative feedback loop comprises transistor 50 and resistor 48, has therefore limited impedance Z
nODE40and the amplitude peak-to-peak value of the amplitude of oscillation voltage at node 40 places (as shown in formula (3)).
Transistor 60 and resistor 58 similarly comprise the circuit of a negative feedback loop, have reduced the impedance at node 42 places.If flow into the electric current of node 40, increase, the electric current by resistor 58 increases, and causes the base current of transistor 60 and 62 to increase.As a result, the collector current of transistor 60 increases, and the speed increasing at node 42 place's voltages is slack-off.On the other hand, if flow into the electric current of node 42, reduce, the electric current by resistor 58 reduces, and causes the base current of transistor 60 and 62 to reduce.Consequently, the collector current of transistor 60 reduces, and the speed reducing at node 42 place's voltages is slack-off.Negative feedback loop comprises transistor 60 and resistor 58, therefore, has limited impedance Z
nODE42and the amplitude peak-to-peak value of the amplitude of oscillation voltage at node 42 places (as shown in formula (4)).
For a given input voltage V
iN, the low input impedance at node 40 and 42 places has limited the amplitude peak-to-peak value of the amplitude of oscillation voltage of these Nodes.For example, V
cCbe approximately 2 volts and be approximately 50mV at node 40 and 42 amplitude of oscillation voltages, it is far below V
cC.The low input impedance at node 40 and 42 places allows V
iN +and V
iN -larger and without making transistor 36 and 38 saturated, thus keep the linear transformation of voltage-to-current and prevent V
oUTdistortion.In addition, the minimizing of the amplitude of oscillation voltage on node 40 and 42 allows circuit 30 to be operated in the supply voltage V of minimizing
cCand do not make transistor 36 and 38 saturated.
N can be any suitable current amplification factor (for example, N=3).
Similarly, the electric current of resistor 58 conduction, it equals I
5add the summation of the base current of transistor 60 and 62, much smaller than electric current I
a -.Therefore, the collector current of transistor 60 is approximately equal to electric current I
a -.Transistor 60 and 62 current mirrors that form, its amplified current I
a -carry out generation current I
b -.Due to the junction area of the base-emitter of transistor 62 be transistor 60 base-emitter junction area N doubly, the collector current I of transistor 62
b -be substantially equal to transistor 60 collector current N doubly: I
b≈ I
a* N (7)
Equation (6) and (7) represent that current mirror 50/52 and 60/62 completes electric current to the amplification of electric current and has linear gain.Therefore, current amplifier 26 amplifies difference current I by a factor N
a=(I
a +-I
a -), produce difference current I
b=(I
b +-I
b -): (I
b +-I
b -) ≈ N (I
a +-I
a -) ≈ K
1n(V
iN +-V
iN -) (8)
The collector electrode of transistor 70 is coupled to positive supply V by resistor 78
cC, base stage coupling secondary signal V
lO +, emitter-coupled is to the collector electrode of transistor 52.The collector electrode of transistor 72 is coupled to positive supply V by resistor 79
cC, base stage is coupled to secondary signal V
lO -, emitter-coupled is to the collector electrode of transistor 52.The collector electrode of transistor 74 is coupled to positive supply V by resistor 78
cC, base stage is coupled to secondary signal V
lO -, emitter-coupled is to the collector electrode of transistor 62.The collector electrode of transistor 76 is coupled to positive supply V by resistor 79
cC, base stage is coupled to secondary signal V
lO +, emitter-coupled is to the collector electrode of transistor 62.Transistor 70 and 76 collector electrode provide respectively the differential output signal V of modulation
oUT +and V
oUT -.
Secondary signal V
lO=(V
lO +-V
lO -) transistor 70,72,74 and 76 controlled is from current signal I
b=(I
b + -i
b -) the middle differential output signal V that produces modulation
oUT=(V
oUT +-V
oUT -).If secondary signal V
lO=(V
lO +-V
lO -) be a high level signal, make | V
lO| > > V
t(V wherein
tthe thermal voltage of transistor 70,72,74 and 76), transistor 70,72,74 and 76 is as synchro switch (that is, be complete conducting or close completely).When transistor 70 and 76 is for conducting conduction current, transistor 72 and 74 is for closing and non-conducting electric current substantially.When transistor 72 and 74 is for conducting conduction current, transistor 70 and 76 is for closing and non-conducting electric current substantially.Therefore, as shown in Figure 4 A, transistor 70 and 76 and transistor 72 and 74 out-phase switched conductive and close response signal V
lO=(V
lO +-V
lO -), it is at+V
1with-V
1between change.
Difference current I
bwith differential output signal V
oUTbetween relation can be expressed as: V
oUT=(V
oUT +-V
oUT -)=K
3(I
b +-I
b -) S
c(t) (9)
K
3by the definite constant of the resistance value of resistor 78 and 79, S
c(t) waveform represents V
lOeach cycle in transistor 70,72,74 and 76 on off state.As shown in Figure 4 A, when transistor 70 and 76 is conducting, S
c(t) equal+1, when transistor 72 and 74 is conducting, at V
lOin second half of each cycle, equal-1.
Fig. 4 B has illustrated typical waveform I
b, V
lO, S
cand V (t)
oUT.At Fig. 4 B, I
b+ I
bMAXwith-I
bMAXbetween change, V
lO+ V
1with-V
1between change, V
oUT+ V
2with-V
2between change.The output current I of demand motive differential pair circuit 28
b +and I
b -amount depend on output signal V
oUT +and V
oUT -amplitude and the resistance value of resistor 78 and 79.Larger output signal V
oUT +and V
oUT -need larger current signal I
b +and I
b -.The signal modulator 30 of Fig. 3 can be used for input signal V
iNchange higher or lower frequency into.
The signal modulator circuit of Fig. 3 is advantageously operated in low supply voltage, because V
cCbe applied to the two ends of the trsanscondutance amplifier 24 of differential pair circuit 28 and current amplifier 26 parallel connections, because current amplifier 26 has limited the amplitude of oscillation voltage on node 40 and 42 as discussed above.Current amplifier 26 is directly for differential pair circuit 28 provides electric current (rather than a trsanscondutance amplifier).With respect to circuit 10, the supply voltage V of circuit 30
cCmay reduce, because have lower voltage drop, wherein a V at trsanscondutance amplifier 24 two ends in parallel with differential pair circuit 28 and current amplifier 26
cCdrop to the two ends of the differential pair 14 of connecting with trsanscondutance amplifier 12.
The lower limit of supply voltage depends on first signal V
iN, secondary signal V
lOwith output signal V
oUTvoltage, and the voltage drop at circuit element two ends.Trsanscondutance amplifier 24 two ends are from V
cCto ground, required minimum voltage falls and is normally greater than the required minimum voltage drop of differential pair circuit 28 and current amplifier 26 two ends.Therefore, supply voltage V has been determined in the voltage drop at the two ends of the assembly in trsanscondutance amplifier 24
cClower limit.With reference to Fig. 3, supply voltage V
cCcan be expressed as: V
cC=V
i-32=V
r-34A+ V
cE-36+ V
i-44(10)
V wherein
i-44the voltage drop at the two ends of current source 44, V
i-36the collector emitter voltage of transistor 36, V
r-34Athe voltage at resistor 34A two ends, V
r-32it is the voltage drop at current source 32 two ends.V
i-44and V
r-32the scope that normally 0.4-0.6 lies prostrate.For example, V
iN +can there be the direct voltage of 1.4 volts and the amplitude of oscillation voltage of ± 0.25 volt.V
cE-36should compare V
cE-SAT(for example, 0.4 volt) adds V
iN +amplitude of oscillation voltage and large, prevent that transistor 36 is saturated.Therefore, V
cE-36should be at least 0.65 volt.V
r-34Aequaling 0.25 volt (is V
iN +amplitude of oscillation voltage).Therefore, use formula (10), V
cCcan be low to moderate between 1.7 volts and 2.1 volts, and can not introduce V
oUTdistortion.Therefore, signal modulator of the present invention can be operated in low supply voltage, thereby saves electric power.
Signal modulator may be for passing through a difference secondary signal V in accordance with the principles of the present invention
lO(V
lO=V
lO +-V
lO -) adjusting first signal V
iNone single-ended, a differential output signal V is provided
oUT=(V
oUT +-V
oUT -).Be illustrated in figure 5 single ended input voltage V of the present invention
iNthe another kind of embodiment of signal modulator.
V
OUT＝(V
OUT +-V
OUT -)＝K
4I
BS
C(t) （11）
Wherein, K
4be one by the definite constant of the resistance value of resistor 124 and 126, S
c(t) be a waveform that represents the on off state of switching transistor 120 and 122.When transistor 120 is conducting, S
c(t) value equals+and 1, when transistor 122 is during for conducting, S
c(t) value equals-1.
V wherein
i-110be the voltage drop at current source 110 two ends, it typically is 0.4～0.6 volt, V
r-104be the voltage drop at resistor 104 two ends, it equals V
iNamplitude of oscillation voltage.V
cE-106be the voltage drop of the collector electrode-emitter of transistor 106, it must compare V
cE-SAT(for example, 0.4 volt) adds V
iNamplitude of oscillation voltage and large, thereby prevent that transistor 106 is saturated, and prevent V
oUTdistortion.Therefore, for amplitude of oscillation voltage range, be the input signal V of ± 0.25 volt
iN, V
cCcan be between 1.3 volts and 1.5 volts, and can not introduce V
oUTdistortion.
Those skilled in the art will further recognize, circuit of the present invention can be realized with the circuit structure beyond above-mentioned.For purposes of illustration, the present invention is unrestricted, limited by claim of the present invention.
Claims (8)
1. a low-voltage, collapsible electric current signal modulator, it is characterized in that: a kind of circuit, the output signal producing at output node place, be directly proportional to the first signal of first signal Nodes, its secondary signal by Section Point place is modulated, and this circuit comprises: a transconductance amplifier circuit, and it comprises that an input is coupled to first signal node; A current mirroring circuit is coupled to the output of trsanscondutance amplifier, and current mirroring circuit comprises a feedback circuit; An and differential pair circuit, it comprises that first input end is coupled to secondary signal node, the second input is coupled to the output of current mirroring circuit, an output is coupled to output node, this current mirror circuit comprises: have the first transistor of first, second, and third terminal, have the transistor seconds of first, second, and third terminal; Described the first and second transistors are bipolar junction transistors, the base-emitter junction area of transistor seconds is greater than the base-emitter junction area of the first transistor, the first and second transistors are mos field effect transistor, and the grid width of transistor seconds and the ratio of length are greater than the grid width of the first transistor and the ratio of length; First, second, and third terminal of described the first transistor comprises respectively the terminal of collector electrode, base stage and emitter, and first, second, and third terminal of described transistor seconds comprises respectively the terminal of collector electrode, base stage and emitter; First, second, and third terminal of described the first transistor comprises respectively the terminal of drain electrode, grid and source electrode, and first, second, and third terminal of described transistor seconds comprises respectively the terminal of drain electrode, grid and source electrode; Described feedback circuit comprises a resistance, from the first terminal of the first transistor, be coupled to first and second transistorized each second terminal, current mirroring circuit also comprises a current source, from first and second transistorized each second terminal, be coupled to described first and second transistorized each the 3rd end, described current mirroring circuit also comprises the third and fourth transistor, and each comprises first, second, and third terminal.
2. a kind of low-voltage according to claim 1, collapsible electric current signal modulator, it is characterized in that: the described first, second, third and the 4th transistor is bipolar junction transistor, the base-emitter junction area of transistor seconds is greater than the base-emitter junction area of the first transistor, and the 4th transistorized base-emitter junction area is greater than the 3rd transistorized base-emitter junction area; The first, second, third and the 4th transistor is mos field effect transistor, the grid width of transistor seconds and the ratio of length are greater than the grid width of the first transistor and the ratio of length, and the ratio of the 4th transistorized grid width and length is greater than the ratio of the 3rd transistorized grid width and length; Each first, second, and third terminal in the described first, second, third and the 4th transistor comprises respectively the terminal of collector electrode, base stage and emitter; Each first, second, and third terminal in the described first, second, third and the 4th transistor comprises respectively the terminal of drain electrode, grid and source electrode; Described feedback circuit comprises the first and second feedback circuits, it is characterized in that: described the first feedback circuit comprises the first resistor, from the first terminal of the first transistor, is coupled to first and second transistorized each second terminal; And described the second feedback circuit comprises the second resistor, from the 3rd transistorized the first terminal, be coupled to third and fourth transistorized each second terminal; Current mirroring circuit also comprises first current source, from first and second transistorized each second terminal, be coupled to first and second transistorized each the 3rd end, the second current source is from third and fourth transistorized each second terminal, third and fourth transistorized each the 3rd terminal that is coupled.
3. a kind of low-voltage according to claim 1, collapsible electric current signal modulator, it is characterized in that: described differential pair circuit also comprises: the first and second transistors respectively have first, second, and third terminal, described output, the first input end of differential pair circuit and the second input comprise respectively first and second transistorized each first, second, and third terminal, described the first and second transistors are comprised of bipolar junction transistor, also mos field effect transistor, consist of, described differential pair circuit also comprises: a pair of the second input is coupled to respectively the first and second outputs of current mirroring circuit, the third and fourth transistor respectively has first, the second and the 3rd terminal, described the 3rd transistorized the first terminal is coupled to the first terminal of the first transistor, the 3rd transistorized the second terminal is coupled to the second terminal of transistor seconds, the 4th transistorized the first terminal is coupled to the first terminal of transistor seconds, the 4th transistorized the second terminal is coupled to the second terminal of the first transistor, first and second transistorized each the 3rd terminal are coupled to the first output of current mirroring circuit, third and fourth transistorized each the 3rd terminal is coupled to the second output of current mirroring circuit, the first, second, third and the 4th transistor is bipolar junction transistor, the first, second, third and the 4th transistor is mos field effect transistor.
4. a kind of low-voltage according to claim 1, collapsible electric current signal modulator, it is characterized in that: for generation of the method that is proportional to the output signal of the first voltage signal, it is modulated by secondary signal, and described method comprises: use a trsanscondutance amplifier that the first voltage signal is converted to the first current signal; With a current mirroring circuit with a feedback circuit, amplify the first current signal the second current signal is provided; And secondary signal is amplified the second current signal by a differential pair circuit; The method that the first voltage signal is transformed into the first current signal also comprises that use trsanscondutance amplifier and differential pair transistors are converted to the first voltage signal of difference the first current signal of difference; Described current mirroring circuit comprises: the transistor seconds that has the first transistor of first, second, and third terminal and have first, second, and third terminal; Described the first and second transistors are bipolar junction transistors, and the base-emitter junction area of transistor seconds is greater than the base-emitter junction area of the first transistor; The first and second transistors are mos field effect transistor, and the grid width of transistor seconds and the ratio of length are greater than the grid width of the first transistor and the ratio of length; First, second, and third terminal of described the first transistor comprises respectively the terminal of collector electrode, base stage and emitter, and first, second, and third terminal of described transistor seconds comprises respectively collector electrode, base stage and emitter terminal; First, second, and third terminal of described the first transistor comprises respectively the terminal of drain electrode, grid and source electrode, and first, second, and third terminal of described transistor seconds comprises respectively the terminal of drain electrode, grid and source electrode; Described feedback circuit comprises a resistance, from the first terminal of the first transistor, be coupled to first and second transistorized each second terminal, current mirroring circuit also comprises a current source, from first and second transistorized each second terminal, is coupled to first and second transistorized each the 3rd end.
5. a kind of low-voltage according to claim 1, collapsible electric current signal modulator, is characterized in that: described current mirroring circuit also comprises the third and fourth transistor, each comprises first, second, and third terminal; The first, second, third and the 4th transistor is bipolar junction transistor, the base-emitter junction area of transistor seconds is greater than the base-emitter junction area of the first transistor, and the 4th transistorized base-emitter junction area is greater than the 3rd transistorized base-emitter junction area; The first, second, third and the 4th transistor is mos field effect transistor, the grid width of transistor seconds and the ratio of length are greater than the grid width of the first transistor and the ratio of length, and the ratio of the 4th transistorized grid width and length is the ratio that is greater than the 3rd transistorized grid width and length; The described first, second, third and the 4th transistorized each first, second, and third terminal comprises respectively the terminal of collector electrode, base stage and emitter; The described first, second, third and the 4th transistorized each first, second, and third terminal comprises respectively the terminal of drain electrode, grid and source electrode; Described feedback circuit comprises the first and second feedback circuits, it is characterized in that, described the first feedback circuit comprises the first resistor, from the first terminal of the first transistor, is coupled to first and second transistorized each second terminal; Wherein, described the second feedback circuit comprises the second resistor, from the 3rd transistorized the first terminal, is coupled to third and fourth transistorized each second terminal; Described current mirroring circuit, also comprise the first current source, from first and second transistorized each second terminal, be coupled to first and second transistorized each the 3rd terminal, the second current source, is coupled to third and fourth transistorized each the 3rd terminal from third and fourth transistorized the second terminal.
6. a kind of low-voltage according to claim 1, collapsible electric current signal modulator, is characterized in that: described differential pair circuit also comprises: the first and second transistors respectively have first, second, and third terminal, described the first and second transistors are comprised of bipolar junction transistor, also mos field effect transistor, consist of, described differential pair circuit also comprises: a pair of the second input is coupled to respectively the first and second outputs of current mirroring circuit, the third and fourth transistor respectively has first, the second and the 3rd terminal, described the 3rd transistorized the first terminal is coupled to the first terminal of the first transistor, the 3rd transistorized the second terminal is coupled to the second terminal of transistor seconds, the 4th transistorized the first terminal is coupled to the first terminal of transistor seconds, the 4th transistorized the second terminal is coupled to the second terminal of the first transistor, first and second transistorized each the 3rd terminal are coupled to the first output of current mirroring circuit, third and fourth transistorized each the 3rd terminal is coupled to the second output of current mirroring circuit, the first, second, third and the 4th transistor is bipolar junction transistor, the first, second, third and the 4th transistor is mos field effect transistor.
7. a kind of low-voltage according to claim 1, collapsible electric current signal modulator, it is characterized in that: produce a method that is proportional to the output signal of first o'clock time variant voltage signal, it is modulated by the second time varying signal, and the method comprises: first o'clock time variant voltage signal is converted to the first current signal; Folding the first current signal produces a collapsible electric current signal; Provide negative feedback to amplify to electric current folded signal and carry out the distortion in Limited Current folded signal; Amplify collapsible electric current signal and produce an amplified current signal; By the second time varying signal, be multiplied by amplified current signal and produce output signal; The described method that first o'clock time variant voltage signal is converted to the first current signal, also comprises and uses a trsanscondutance amplifier with output that first o'clock time variant voltage signal is converted to first current signal; For collapsible electric current signal provides negative feedback, also comprise the peak-to-peak value amplitude of the output voltage swing voltage that limits trsanscondutance amplifier; The method that described collapsible electric current signal amplifies, also comprises with a current mirroring circuit and amplifies collapsible electric current signal; Described amplified current signal times is with the method for the second time varying signal, also comprise use a differential pair circuit by amplified current signal times with the second time varying signal.
8. a kind of low-voltage according to claim 1, collapsible electric current signal modulator, it is characterized in that: a kind of improved signal modulator circuit, this circuit produces an output signal being directly proportional to the first signal of first signal Nodes at output node place, its secondary signal by Section Point place is modulated, (1) transconductance amplifier circuit that signal modulator has is coupled to first signal node, (2) differential pair circuit are coupled to secondary signal node and output node, its improvement comprises: a current amplifier circuit comprises that a current mirroring circuit is coupled to the output of trsanscondutance amplifier and differential pair, current mirroring circuit comprises that a feedback circuit is coupled to the output of trsanscondutance amplifier, described current mirroring circuit comprises the first and second transistors, described the first and second transistors are bipolar junction transistors, and the base-emitter junction area of transistor seconds is greater than the base-emitter junction area of the first transistor, the first and second transistors are mos field effect transistor, and the grid width of transistor seconds and the ratio of length are greater than the grid width of the first transistor and the ratio of length, described current mirroring circuit also comprises the third and fourth transistor, described differential pair circuit also comprises two cross-linked differential pairs, and each differential pair is comprised of two transistors.
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| CN201310612797.6A CN103647532A (en) | 2013-11-26 | 2013-11-26 | Low-voltage folding-type current signal modulator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105337579A (en) * | 2014-08-06 | 2016-02-17 | 南京能瑞自动化设备股份有限公司 | Low voltage low power consumption active mixer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1245598A (en) * | 1997-01-27 | 2000-02-23 | 夸尔柯姆股份有限公司 | High dynamic range variable gain amplifier |
| US6300845B1 (en) * | 2000-04-06 | 2001-10-09 | Linear Technology Corporation | Low-voltage, current-folded signal modulators and methods |
-
2013
- 2013-11-26 CN CN201310612797.6A patent/CN103647532A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1245598A (en) * | 1997-01-27 | 2000-02-23 | 夸尔柯姆股份有限公司 | High dynamic range variable gain amplifier |
| US6300845B1 (en) * | 2000-04-06 | 2001-10-09 | Linear Technology Corporation | Low-voltage, current-folded signal modulators and methods |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105337579A (en) * | 2014-08-06 | 2016-02-17 | 南京能瑞自动化设备股份有限公司 | Low voltage low power consumption active mixer |
| CN105337579B (en) * | 2014-08-06 | 2019-03-26 | 南京能瑞自动化设备股份有限公司 | A kind of low-voltage and low-power dissipation active mixer |
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Application publication date: 20140319 |