CN103646920A - A post-processing method used for W-CMP and an apparatus thereof - Google Patents
A post-processing method used for W-CMP and an apparatus thereof Download PDFInfo
- Publication number
- CN103646920A CN103646920A CN201310630247.7A CN201310630247A CN103646920A CN 103646920 A CN103646920 A CN 103646920A CN 201310630247 A CN201310630247 A CN 201310630247A CN 103646920 A CN103646920 A CN 103646920A
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- China
- Prior art keywords
- post
- cmp
- pipeline
- wafer
- ammoniacal liquor
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- 238000012805 post-processing Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 34
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 9
- 239000007921 spray Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 abstract description 11
- 239000010937 tungsten Substances 0.000 abstract description 11
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 3
- 238000000889 atomisation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a post-processing method used for W-CMP and an apparatus thereof. The post-processing method comprises injecting steam mixing hot ammonia water with high-pressure nitrogen on the surface of a wafer in order to remove hydrogen peroxide. The method injects the mixed gas composed of the hot ammonia water and the high-pressure nitrogen on the surface of the wafer after polished by tungsten in order to clean the surface of the wafer with atomized ammonia water for removing residual hydrogen peroxide. Therefore, an effect of reducing tungsten corrosion is achieved and the reliability of a device is enhanced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of post-processing approach for W-CMP and device thereof.
Background technology
In semiconductor fabrication process, CMP(Chemical Mechanical Polishing, cmp) being technical process a kind of advanced person, main, especially for the flattening surface in ultra-large type integrated circuit fabrication process, is indispensable thin film planarization technology.
In latter stage in the 1980's, W-CMP, the cmp technology of tungsten, is applied in the volume production of internal memory and logical product, to replace the role of dry etching in tungsten plug (Tungesten Plug) technique.Be the composition of used slurry with the difference of general silicon dioxide CMP maximum, by the corrosion of tungsten and mechanical lapping being come to the surface of planarization tungsten.Wherein, comprise oxidation reaction and complexation reaction.
In general, all contain hydrogen peroxide in the chemical-mechanical grinding liquid of tungsten, after grinding completes, part hydrogen peroxide can remain in crystal column surface, causes the corrosion of tungsten.Along with technology node advances, this corrosion phenomenon is more obvious, and the quality of wafer is made a big impact.
Summary of the invention
The problem existing in order to solve above-mentioned prior art, the invention provides a kind of post-processing approach for W-CMP and device thereof.
The invention provides a kind of post-processing approach for W-CMP, it comprises: the mixing steam of hot ammoniacal liquor and high pressure nitrogen is injected in to crystal column surface, to remove hydrogen peroxide.
Further, the temperature of this hot ammoniacal liquor is 35-65 ℃.
Further, the flow of this high pressure nitrogen is 30-80L/min.
Further, the spray angle this wafer being sprayed is 0-45 °.
The present invention also provides a kind of after-treatment device for W-CMP, it comprises: wafer carrying part and jetter, this jetter comprises and transmits the first pipeline of hot ammoniacal liquor, the second pipeline, mixed pipe line and the nozzle of transferring high voltage nitrogen, this first pipeline is connected with one end of mixed pipe line respectively with the second pipeline, this nozzle is located at the other end of mixed pipe line, with the wafer jet cleaning on wafer carrying part.
Further, this first pipeline is supplied with hot ammoniacal liquor by local feed system, and this second pipeline is supplied with high pressure nitrogen by factory's business feed system.
Further, this nozzle is also provided with adjusting device, with manual adjustments or automatically regulate the spray angle of nozzle.
The present invention proposes a kind of post-processing approach for W-CMP and device thereof, by the crystal column surface after grinding to tungsten, spray the mist being formed by hot ammoniacal liquor and high pressure nitrogen, ammoniacal liquor vapour with atomization cleans crystal column surface, remove residual hydrogen peroxide, reach the effect that reduces tungsten corrosion, thereby improve the reliability of device.
Accompanying drawing explanation
For can clearer understanding objects, features and advantages of the present invention, below with reference to accompanying drawing, preferred embodiment of the present invention is described in detail, wherein:
Fig. 1 is the W-CMP after-treatment device structural representation of first embodiment of the invention.
Embodiment
the first embodiment
Refer to Fig. 1, after-treatment device of the present invention is for after chemical mechanical polishing of tungsten, crystal column surface is carried out to clean, it comprises: wafer carrying part 1 and jetter, this jetter comprises and transmits the first pipeline 21 of hot ammoniacal liquor, the second pipeline 22, mixed pipe line 23 and the nozzle 24 of transferring high voltage nitrogen.
Wherein, the first pipeline 21 is connected with the right-hand member of mixed pipe line 23 respectively with the second pipeline 22, so that hot ammoniacal liquor is mixed in mixed pipe line with high pressure nitrogen.Nozzle 24 is located at the other end of mixed pipe line 23, with wafer 3 jet cleanings on wafer carrying part 1.
In the present embodiment, the first pipeline 21 is connected with local feed system 26, and supplies with hot ammoniacal liquor by local feed system 26; The second pipeline 22Yu factory business feed system 27 is connected, and Bing You factory business feed system 27 is supplied with high pressure nitrogen.
The method of utilizing the after-treatment device of the present embodiment to carry out W-CMP reprocessing, comprising: the mixing steam of hot ammoniacal liquor and high pressure nitrogen is injected in to crystal column surface, to remove hydrogen peroxide.
Particularly, temperature is the high pressure nitrogen that the hot ammoniacal liquor of 50 ℃ and flow are 50L/min, the ammoniacal liquor vapour mixing through mixed pipe line 23 sprays by nozzle 24, the flow velocity of ejection is equivalent to the flow of nitrogen, be 50L/min, wafer 3 is cleaned, by chemical reaction, remove hydrogen peroxide, the spray angle that itself and crystal column surface are is 30 °.
the second embodiment
The after-treatment device of the present embodiment is based on above-mentioned the first embodiment, this device is also provided with adjusting device at nozzle place, in the mode of automatic rotation, regulate in real time the spray angle of nozzle, to be not orthogonal to wafer side to ejection, make atomization gas can be evenly distributed in crystal column surface.
In other embodiments, this adjusting device can also be the mode of manual adjustments.
Claims (7)
1. for a post-processing approach of W-CMP, it is characterized in that, it comprises: the mixing steam of hot ammoniacal liquor and high pressure nitrogen is injected in to crystal column surface, to remove hydrogen peroxide.
2. the post-processing approach for W-CMP according to claim 1, is characterized in that: the temperature of this hot ammoniacal liquor is 35-65 ℃.
3. the post-processing approach for W-CMP according to claim 2, is characterized in that: the flow of this high pressure nitrogen is 30-80L/min.
4. the post-processing approach for W-CMP according to claim 3, is characterized in that: the spray angle that this wafer is sprayed is 0-45 °.
5. the after-treatment device for W-CMP post-processing approach described in claim 1 to 4 any one, it is characterized in that, it comprises: wafer carrying part and jetter, this jetter comprises and transmits the first pipeline of hot ammoniacal liquor, the second pipeline, mixed pipe line and the nozzle of transferring high voltage nitrogen, this first pipeline is connected with one end of mixed pipe line respectively with the second pipeline, this nozzle is located at the other end of mixed pipe line, with the wafer jet cleaning on wafer carrying part.
6. after-treatment device according to claim 5, is characterized in that: this first pipeline is supplied with hot ammoniacal liquor by local feed system, and this second pipeline is supplied with high pressure nitrogen by factory's business feed system.
7. after-treatment device according to claim 5, is characterized in that: this nozzle is also provided with adjusting device, with manual adjustments or automatically regulate the spray angle of nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310630247.7A CN103646920A (en) | 2013-11-29 | 2013-11-29 | A post-processing method used for W-CMP and an apparatus thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310630247.7A CN103646920A (en) | 2013-11-29 | 2013-11-29 | A post-processing method used for W-CMP and an apparatus thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103646920A true CN103646920A (en) | 2014-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310630247.7A Pending CN103646920A (en) | 2013-11-29 | 2013-11-29 | A post-processing method used for W-CMP and an apparatus thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN103646920A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105774235A (en) * | 2016-03-15 | 2016-07-20 | 深圳市华星光电技术有限公司 | Device and method for manufacturing organic light emitting display |
| CN112259450A (en) * | 2020-09-18 | 2021-01-22 | 厦门市三安集成电路有限公司 | Sectional etching method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1236977A (en) * | 1998-05-22 | 1999-12-01 | 日本电气株式会社 | Semicoductor device washing apparatus and method of washing semiconductor devices |
| CN1967788A (en) * | 2005-11-17 | 2007-05-23 | 上海华虹Nec电子有限公司 | Cleanout method after tungsten CMP |
| CN102437013A (en) * | 2011-08-29 | 2012-05-02 | 上海华力微电子有限公司 | Built-in wafer cleaning device for chemical mechanical polishing (CMP) machine table |
| CN102441843A (en) * | 2011-08-29 | 2012-05-09 | 上海华力微电子有限公司 | Built-in cleaning structure and method for CMP (chemical mechanical polishing) machine table |
| CN102810459A (en) * | 2011-06-03 | 2012-12-05 | 中国科学院微电子研究所 | Method for cleaning wafer after chemical mechanical planarization |
-
2013
- 2013-11-29 CN CN201310630247.7A patent/CN103646920A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1236977A (en) * | 1998-05-22 | 1999-12-01 | 日本电气株式会社 | Semicoductor device washing apparatus and method of washing semiconductor devices |
| CN1967788A (en) * | 2005-11-17 | 2007-05-23 | 上海华虹Nec电子有限公司 | Cleanout method after tungsten CMP |
| CN102810459A (en) * | 2011-06-03 | 2012-12-05 | 中国科学院微电子研究所 | Method for cleaning wafer after chemical mechanical planarization |
| CN102437013A (en) * | 2011-08-29 | 2012-05-02 | 上海华力微电子有限公司 | Built-in wafer cleaning device for chemical mechanical polishing (CMP) machine table |
| CN102441843A (en) * | 2011-08-29 | 2012-05-09 | 上海华力微电子有限公司 | Built-in cleaning structure and method for CMP (chemical mechanical polishing) machine table |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105774235A (en) * | 2016-03-15 | 2016-07-20 | 深圳市华星光电技术有限公司 | Device and method for manufacturing organic light emitting display |
| US10124364B2 (en) | 2016-03-15 | 2018-11-13 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Devices and manufacturing methods for manufacturing organic light emitting devices (OLEDs) |
| CN112259450A (en) * | 2020-09-18 | 2021-01-22 | 厦门市三安集成电路有限公司 | Sectional etching method |
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Application publication date: 20140319 |