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CN103633125A - Electrode for power semiconductor device - Google Patents

Electrode for power semiconductor device Download PDF

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Publication number
CN103633125A
CN103633125A CN201210300644.3A CN201210300644A CN103633125A CN 103633125 A CN103633125 A CN 103633125A CN 201210300644 A CN201210300644 A CN 201210300644A CN 103633125 A CN103633125 A CN 103633125A
Authority
CN
China
Prior art keywords
electrode
semiconductor device
power semiconductor
groove structure
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210300644.3A
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Chinese (zh)
Inventor
吴磊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CRRC Xian Yongdian Electric Co Ltd
Original Assignee
Xian Yongdian Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Yongdian Electric Co Ltd filed Critical Xian Yongdian Electric Co Ltd
Priority to CN201210300644.3A priority Critical patent/CN103633125A/en
Publication of CN103633125A publication Critical patent/CN103633125A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/3701Shape
    • H01L2224/37012Cross-sectional shape
    • H01L2224/37013Cross-sectional shape being non uniform along the connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention provides an electrode for a power semiconductor device. The electrode comprises a metal electrode in which a groove structure is disposed so that a bending is generated in the current flowing through the metal electrode in a current direction at the groove structure. Through employment of the groove structure, a bending is generated in the current direction at the groove structure when a large current flows, so that magnetic fields generated by the current offsets each other at the surface of the electrode, thereby reducing the electromagnetic interference of electronic devices using the electrode.

Description

Power semiconductor device electrode
Technical field
The present invention relates to the electrode structure of electronic device, relate in particular to a kind of power semiconductor device electrode.
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) be the important electronic device in the convertor assemblys such as inverter, be widely used in the fields such as high ferro, subway, urban track traffic, wind-powered electricity generation, solar energy, clean energy resource.
At present, in IGBT as the electrode of signal of telecommunication output or input terminal, conventionally adopt straight list structure, particularly, as shown in Figure 1, the metallic conductor that the electrode 100 of existing IGBT is bending structure, lower bending part 101 is to be inserted in IGBT body, upper bending part 102 exposes IGBT body, as the signal of IGBT, inputs or outputs terminal, and upper bending part 102 is vertical bar structure.Because IGBT works conventionally under larger electric current, when on electrode 100, electric current flows through, can produce larger electromagnetic field, thereby can produce electromagnetic interference to adjacent parts, affect the normal operation of adjacent component and whole convertor assembly, particularly, in the convertor assembly of modular construction, the larger magnetic field producing on the electrode of IGBT can produce larger electromagnetic interference to the drive circuit board of IGBT and configuration plate, and then affects stability and the reliability of whole convertor assembly work.
To sum up, in existing IGBT device, electrode adopts straight list structure conventionally, when electrode has electric current to flow through, can produce larger electromagnetic field, produces electromagnetic interference, affects the normal operation of miscellaneous part.
Summary of the invention
The invention provides a kind of power semiconductor device electrode, can reduce the electromagnetic interference that electrode produces.
The invention provides a kind of power semiconductor device electrode, comprising:
Metal electrode, offers groove structure on described metal electrode, and the sense of current of the electric current of the described metal electrode that makes to flow through at described groove structure place produces and curve.
Power semiconductor device electrode provided by the invention, by groove structure is set on metal electrode, the electric current that makes to flow through on metal electrode can produce and curve, will cancel out each other at electrode surface in the magnetic field that electric current produces, thereby can reduce the magnetic field intensity that whole metal electrode produces, can be applicable to have in the electronic device of larger operating current, can reduce the electromagnetic interference to surrounding environment such as its adjacent devices.
Accompanying drawing explanation
Fig. 1 is the structural representation of the electrode on existing IGBT device;
The power semiconductor device that Fig. 2 provides for the embodiment of the present invention one perspective view of electrode;
The power semiconductor device that Fig. 3 provides for the embodiment of the present invention one front view of electrode;
The power semiconductor device that Fig. 4 provides for the embodiment of the present invention one vertical view of electrode;
The structural representation of the IGBT that Fig. 5 provides for the embodiment of the present invention two.
Embodiment
The power semiconductor device that Fig. 2 provides for the embodiment of the present invention one perspective view of electrode; The power semiconductor device that Fig. 3 provides for the embodiment of the present invention one front view of electrode; The power semiconductor device that Fig. 4 provides for the embodiment of the present invention one vertical view of electrode.As shown in Fig. 2-Fig. 4, the present embodiment electrode comprises metal electrode 1, on metal electrode 1, offer groove structure 2, the electric current of metal electrode 1 sense of current at groove structure 2 places that makes to flow through produces and curves, at the groove structure 2 electric current formed electromagnetic fields in place, will cancel out each other like this, thereby can reduce on whole metal electrode 1 intensity of the electromagnetic field producing.
In the present embodiment, above-mentioned metal electrode 1 is specially the metal electrode of bending structure, comprises first fold turn of bilge 11 and the second bending part 12, and groove structure 2 is arranged on first fold turn of bilge 11.The first fold turn of bilge 11 of the present embodiment metal electrode 1 can be inserted in electronic device, and for example IGBT is inner, is electrically connected to the circuit structure in power semiconductor device, and the second bending part 12 exposes, as the terminal that inputs or outputs of power semiconductor device.
In the present embodiment, above-mentioned groove structure 2 specifically can comprise at least 2 grooves, and these at least 2 grooves are crisscross arranged in the both sides of metal electrode 1, so that the sense of current of flowing through between adjacent two grooves can produce, curves.Particularly, as shown in Figure 2, on the first kink 11 of the present embodiment metal electrode 1, be provided with 2 grooves 21, be crisscross arranged in the both sides of the first kink 11, and these two grooves, 21 formation S type groove structures, like this, when electric current is flowed through this 2 S type groove structures, the flow direction of electric current is the S-shaped flow direction that curves also, so the magnetic field that electric current produces will cancel out each other, thereby can reduce the magnetic field intensity that whole metal electrode 1 produces.
In the present embodiment, above-mentioned groove 21 is rectangular recess, and the edge of rectangular recess has little chamfering, so that the circulation of electric current, and rectangular recess is convenient to processing and is made, in practical application, this groove can be also zigzag groove, in the both sides of metal electrode 1, can form respectively zigzag groove structure.In practical application, the groove structure of suitable shape can be set as required, as long as can produce the current direction curving on metal electrode, the magnetic field that cancellation current produces.
To sum up, the electrode that the present embodiment provides, by groove structure is set on metal electrode, the electric current that makes to flow through on metal electrode can produce and curve, will cancel out each other at electrode surface in the magnetic field that electric current produces, thereby can reduce the magnetic field intensity that whole metal electrode produces, can be applicable to have in the electronic device of larger operating current, can reduce the electromagnetic interference to surrounding environment such as its adjacent devices.
The structural representation of the IGBT that Fig. 5 provides for the embodiment of the present invention two.As shown in Figure 5, the IGBT that the present embodiment provides comprises: IGBT body 10, on this IGBT body 10, be provided with electrode 20, electric current as IGBT inputs or outputs end, wherein, this electrode 20 is for adopting the power semiconductor device electrode shown in above-mentioned Fig. 2-Fig. 4, and its concrete structure does not repeat them here.
In the present embodiment, as shown in Figure 5,3 electrodes 20 can be set on power semiconductor device body 10, on each electrode 20, all can there is same or similar structure shown in same Fig. 2-Fig. 4.
It will be understood by those skilled in the art that compound full-control type voltage driven type power semiconductor that IGBT is comprised of double pole triode BJT and insulating gate type field effect tube MOS is that 600V and above converter system are as fields such as alternating current machine, frequency converter, Switching Power Supply, lighting circuit, Traction Drives applicable to direct voltage.The structure of the present embodiment IGBT is identical with conventional I GBT or similar, and just electrode is for adopting the power semiconductor device electrode structure shown in Fig. 2-Fig. 4, and the concrete structure of IGBT body does not repeat them here.
In addition, the embodiment of the present invention also provides a kind of electronic device, this electronic device can comprise power semiconductor device body, on this power semiconductor device body, be provided with electrode, and this electrode is for adopting the power semiconductor device electrode structure shown in above-mentioned Fig. 2-Fig. 4, this electronic device specifically can be the power semiconductor device with large current work, can be for example Intelligent Power Module (Intelligent Power Module, IPM), or can be also other power devices, like this, when the electronic device of large current work adopts the electrode shown in above-mentioned Fig. 2-Fig. 4, the magnetic field intensity producing on electrode is little, the interference producing is little.
Finally it should be noted that: each embodiment, only in order to technical scheme of the present invention to be described, is not intended to limit above; Although the present invention is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.

Claims (6)

1. a power semiconductor device electrode, is characterized in that, comprising:
Metal electrode, offers groove structure on described metal electrode, and the sense of current of the electric current of the described metal electrode that makes to flow through at described groove structure place produces and curve.
2. power semiconductor device electrode according to claim 1, is characterized in that, described metal electrode is bending structure, comprises first fold turn of bilge and the second bending part;
Described groove structure is arranged on described first fold turn of bilge.
3. power semiconductor device electrode according to claim 1 and 2, is characterized in that, described groove structure comprises at least 2 grooves;
Described at least 2 grooves are crisscross arranged in the both sides of described metal electrode.
4. power semiconductor device electrode according to claim 3, is characterized in that, adjacent 2 grooves form S type groove structure.
5. power semiconductor device electrode according to claim 3, is characterized in that, described groove is rectangular recess, and recess edge place has chamfering.
6. power semiconductor device electrode according to claim 3, is characterized in that, described groove is zigzag groove.
CN201210300644.3A 2012-08-22 2012-08-22 Electrode for power semiconductor device Pending CN103633125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210300644.3A CN103633125A (en) 2012-08-22 2012-08-22 Electrode for power semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210300644.3A CN103633125A (en) 2012-08-22 2012-08-22 Electrode for power semiconductor device

Publications (1)

Publication Number Publication Date
CN103633125A true CN103633125A (en) 2014-03-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210300644.3A Pending CN103633125A (en) 2012-08-22 2012-08-22 Electrode for power semiconductor device

Country Status (1)

Country Link
CN (1) CN103633125A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1619796A (en) * 2003-11-19 2005-05-25 株式会社丰田自动织机 Semiconductor device
US20070235860A1 (en) * 2005-04-12 2007-10-11 Jurgen Steger Power semiconductor module with flush terminal elements
US20110011620A1 (en) * 2008-04-03 2011-01-20 Abb Research Ltd Electrical Conductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1619796A (en) * 2003-11-19 2005-05-25 株式会社丰田自动织机 Semiconductor device
US20070235860A1 (en) * 2005-04-12 2007-10-11 Jurgen Steger Power semiconductor module with flush terminal elements
US20110011620A1 (en) * 2008-04-03 2011-01-20 Abb Research Ltd Electrical Conductor

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Application publication date: 20140312

RJ01 Rejection of invention patent application after publication