CN103633030A - Method for improving in-plane uniformity of reliability of SONOS flash device - Google Patents
Method for improving in-plane uniformity of reliability of SONOS flash device Download PDFInfo
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- CN103633030A CN103633030A CN201210300840.0A CN201210300840A CN103633030A CN 103633030 A CN103633030 A CN 103633030A CN 201210300840 A CN201210300840 A CN 201210300840A CN 103633030 A CN103633030 A CN 103633030A
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000004888 barrier function Effects 0.000 claims abstract description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000003647 oxidation Effects 0.000 claims abstract description 29
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 29
- MDBGGTQNNUOQRC-UHFFFAOYSA-N Allidochlor Chemical compound ClCC(=O)N(CC=C)CC=C MDBGGTQNNUOQRC-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 claims description 20
- 239000000428 dust Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 150000003376 silicon Chemical class 0.000 claims description 2
- 230000005641 tunneling Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
- Non-Volatile Memory (AREA)
Abstract
The invention discloses a method for improving the in-plane uniformity of the reliability of a SONOS flash device. The method comprises the following steps: 1) preparing a tunneling oxide layer on a silicon substrate; 2) preparing a silicon nitride layer on the tunneling oxide layer; 3) performing ISSG oxidation on the silicon nitride layer through the RadOx oxidation process to form a silicon oxynitride barrier layer; 4) preparing a silicon nitride trap layer on the silicon oxynitride barrier layer; 5) and performing partial oxidation on the silicon nitride trap layer through the RadOx oxidation process to form a top-layer high-oxygen-containing silicon oxynitride barrier layer. According to the invention, the in-plane uniformity of the reliability of the final SONOS flash device product can be greatly improved; and at the same time, advantages of intuition and convenience can be realized for the control of daily processes.
Description
Technical field
The present invention relates to a kind of method of the SONOS of improvement flush memory device reliability, particularly relate to a kind of method of internal homogeneity of the SONOS of improvement flush memory device reliability.
Background technology
SONOS flush memory device, becomes one of at present main flash type because possess good scaled down characteristic and radiation-resisting performance.The integrity problem that SONOS flush memory device faces mainly contains two: the erasable endurance of the one, Endurance(electricity) characteristic, weigh exactly SONOS flush memory device after program/erase repeatedly, the degeneration that device property aspect is possible; The 2nd, Data Retention(data confining force) characteristic is exactly the data hold capacity of SONOS flush memory device.By the application of continuous improvement and many new technologies, the reliability of SONOS flush memory device has had very large raising, wherein, in SONOS flush memory device, there is very large effect on silicon oxynitride barrier layer for the impact of reliability, and it is directly determining the height of SONOS flush memory device reliability performance.
Yet silicon oxynitride barrier layer generally all utilizes N in traditional handicraft
2o (nitrous oxide) gas doping forms, but due to N
2o gas decomposes completely needs higher temperature, simultaneously also not controlled, therefore causes the silicon oxynitride barrier layer oxygen content distribution in ONO film very inhomogeneous, thereby the homogeneity in final reliability performance face is greatly affected.Meanwhile, in ONO film, the HTO high temperature oxide layer of top layer is also to utilize N
2o, as reaction source, therefore, is subject to N equally
2thereby O decomposes inhomogeneous impact causes the homogeneity of oxide layer also poor, and the dividing potential drop while finally making write, store and read and write on ONO layer is also affected, and then has influence on the reliability performance of SONOS flush memory device.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method of internal homogeneity of the SONOS of improvement flush memory device reliability.
For solving the problems of the technologies described above, the method for the internal homogeneity of the SONOS of improvement flush memory device reliability of the present invention is mainly to realize by improving the preparation technology of ONO film, comprises step:
1), on silicon substrate, prepare tunnel oxide;
2), on tunnel oxide, prepare silicon nitride layer;
3) utilize RadOx oxidation technology (radiation oxygen atom oxidation technology), silicon nitride layer is carried out to ISSG oxidation (oxygen-doped) [insitu moisture generates for ISSG, in-situ steam generation], form silicon oxynitride barrier layer;
4) on silicon oxynitride barrier layer, prepare silicon nitride trap layer;
5) utilize RadOx oxidation technology, silicon nitride trap layer is carried out to partial oxidation, form top layer high containing oxygen silicon oxynitride barrier layer.
In described step 1), the technique of preparing tunnel oxide is RadOx oxidation technology, and wherein, technological parameter is H
2: 1slm～30slm, O
2: 1slm～100slm, reaction temperature is 900～1200 ℃, pressure is 0～25torr; The thickness of described tunnel oxide is 10 dust～40 dusts.
Described step 2) in, the method for preparing silicon nitride layer is chemical gas-phase deposition method, and the thickness of silicon nitride layer is 20 dust～60 dusts; Wherein, the technological parameter of the method is as follows:
Flow is NH
3: 30sccm～100sccm, DCS(SiH
2cl
2): 50sccm～120sccm, reaction temperature is 700～760 ℃, pressure is 150～300mtorr.
Described step 3), 5), in, the technological parameter in RadOx oxidation technology is H
2: 1slm～30slm, O
2: 1slm～100slm, reaction temperature is 900～1200 ℃, pressure is 0～25torr.
In described step 3), silicon oxynitride barrier layer thickness is 30 dust～60 dusts; Wherein, the SIMS(ion microprobe in this silicon oxynitride barrier layer) oxygen content is 1%～30%.
In described step 4), the method for preparing silicon nitride trap layer is chemical gas-phase deposition method, and the thickness of silicon nitride trap layer is 30 dust～120 dusts; Wherein, the technological parameter of this chemical gas-phase deposition method is as follows:
Flow is NH
3: 30sccm～100sccm, SiH
2cl
2: 50sccm～120sccm, reaction temperature is 700～760 ℃, pressure is 150～300mtorr;
In described step 5), the high thickness containing oxygen silicon oxynitride barrier layer of top layer is 40 dust～70 dusts; Wherein, the high SIMS oxygen content containing oxygen silicon oxynitride barrier layer of this top layer is 70%～95%.
The present invention is mainly when film forming ONO silicon oxynitride barrier layer, utilizes RadOx technique oxidized silicon nitride method film forming, thereby obtains the good silicon oxynitride of oxygen content homogeneity barrier layer.In the present invention, compared with the important point, be to utilize the feature of the strong oxidation of oxygen atom in RadOx technique, by adjusting the ratio of hydrogen and oxygen, thereby reach the object of the oxygen-doped amount of controlling silicon nitride.Certainly, utilize the characteristic of RadOx oxygen atom oxidation simultaneously, also can prepare top layer nitrogen oxide layer, the strong oxidizing property of oxygen atom can be so that the nitrogen oxide layer of top layer reaches the characteristic of approximate oxide layer.Because RadOx technique is comparatively stable and have good internal homogeneity, therefore, finally obtain stable, the good SONOS flush memory device of homogeneity reliability performance.
Therefore, the present invention adjusts by technique, can be so that the internal homogeneity of final SONOS flush memory device product reliability is improved significantly; Meanwhile, also more directly perceived, more convenient for the control of daily technique.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is the schematic diagram forming after tunnel oxide;
Fig. 2 is the schematic diagram forming after silicon nitride layer;
Fig. 3 forms the schematic diagram behind silicon oxynitride barrier layer by silicon nitride barrier ISSG oxidation (oxygen-doped);
Fig. 4 is the schematic diagram forming after silicon nitride trap layer;
Fig. 5 forms the high schematic diagram containing behind oxygen silicon oxynitride barrier layer of top layer by silicon nitride trap layer partial oxidation;
Fig. 6 is the energy level schematic diagram of SONOS flush memory device.
In figure, description of reference numerals is as follows:
1 is silicon substrate, and 2 is tunnel oxide, and 3 is silicon nitride layer, and 4 is silicon oxynitride barrier layer (ISSG silicon oxynitride barrier layer), and 5 is silicon nitride trap layer, and 6 is the high oxygen silicon oxynitride barrier layer that contains of top layer, and 7 is polysilicon, and T-T tunnelling refers to that trap is to the tunnelling of trap.
Embodiment
The method of improving the internal homogeneity of SONOS flush memory device reliability of the present invention, comprises step:
1) on silicon substrate 1, by RadOx oxidation technology, prepare thickness and be the tunnel oxide 2(of 10 dust～40 dusts as shown in Figure 1);
Wherein, the technological parameter of RadOx oxidation technology is H
2: 1slm～30slm, O
2: 1slm～100slm, reaction temperature is 900～1200 ℃, pressure is 0～25torr.
2) on tunnel oxide 2, utilize chemical gas-phase deposition method, prepare thickness and be the silicon nitride layer 3(of 20 dust～60 dusts as shown in Figure 2);
Wherein, the technological parameter of chemical gas-phase deposition method is as follows:
Flow is NH
3: 30sccm～100sccm, SiH
2cl
2: 50sccm～120sccm, reaction temperature is 700～760 ℃, pressure is 150～300mtorr.
3) utilize RadOx oxidation technology, silicon nitride layer 3 is carried out to ISSG oxidation, form thickness and be the silicon oxynitride barrier layer 4(of 30 dust～60 dusts as shown in Figure 3);
Wherein, the technological parameter in RadOx oxidation technology is H
2: 1slm～30slm, O
2: 1slm～100slm, reaction temperature is 900～1200 ℃, pressure is 0～25torr.
4) on silicon oxynitride barrier layer 4, utilize chemical gas-phase deposition method, prepare thickness and be the silicon nitride trap layer 5(of 30 dust～120 dusts as shown in Figure 4);
Wherein, the technological parameter of this chemical gas-phase deposition method is as follows:
Flow is NH
3: 30sccm～100sccm, SiH
2cl
2: 50sccm～120sccm, reaction temperature is 700～760 ℃, pressure is 150～300mtorr.
5) utilize RadOx oxidation technology, silicon nitride trap layer 5 is carried out to partial oxidation, formation thickness is that the top layer of 40 dust～70 dusts is high containing oxygen silicon oxynitride barrier layer 6(as shown in Figure 5).
Wherein, the technological parameter in RadOx oxidation technology is H
2: 1slm～30slm, O
2: 1slm～100slm, reaction temperature is 900～1200 ℃, pressure is 0～25torr.
After completing whole ONO film preparation, on it, continue again to do polysilicon and draw layer etc., follow-up method and traditional SONOS flash memory and logic process are basic identical.
According to above-mentioned steps, by preparing tunnel oxide, then prepare silicon oxynitride barrier layer, prepare silicon nitride trap layer and top layer silicon oxynitride barrier layer, subsequently according to conventional SONOS flush memory device preparation technology, the energy level of the SONOS flush memory device finally obtaining as shown in Figure 6, has the internal homogeneity energy of good reliability.
In the present invention, because two-layer silicon oxynitride layer role is not quite similar, as shown in the SONOS flush memory device energy band diagram of Fig. 6, therefore, its needed oxygen-doped amount is also different.Bottom silicon oxynitride barrier layer 4 oxygen-doped amounts are lower, SIMS(ion microprobe) oxygen content is 1%～30%, and the oxygen-doped amount in top layer silicon oxynitride barrier layer (height is containing oxygen silicon oxynitride barrier layer 6) need to be higher, SIMS oxygen content is 70%～95%.
The present invention, by the adjustment of above-mentioned technique, can make the internal homogeneity of final SONOS flush memory device reliability be improved significantly.
Claims (7)
1. a method of improving the internal homogeneity of SONOS flush memory device reliability, is characterized in that, comprises step:
1), on silicon substrate, prepare tunnel oxide;
2), on tunnel oxide, prepare silicon nitride layer;
3) utilize RadOx oxidation technology, silicon nitride layer is carried out to ISSG oxidation, form silicon oxynitride barrier layer;
4) on silicon oxynitride barrier layer, prepare silicon nitride trap layer;
5) utilize RadOx oxidation technology, silicon nitride trap layer is carried out to partial oxidation, form top layer high containing oxygen silicon oxynitride barrier layer.
2. the method for claim 1, is characterized in that: in described step 1), the technique of preparing tunnel oxide is RadOx oxidation technology, and wherein, technological parameter is H
2: 1slm～30slm, O
2: 1slm～100slm, reaction temperature is 900～1200 ℃, pressure is 0～25torr;
The thickness of described tunnel oxide is 10 dust～40 dusts.
3. the method for claim 1, is characterized in that: described step 2), the method for preparing silicon nitride layer is chemical gas-phase deposition method, and the thickness of silicon nitride layer is 20 dust～60 dusts
Wherein, the technological parameter of this chemical gas-phase deposition method is as follows:
Flow is NH
3: 30sccm～100sccm, SiH
2cl
2: 50sccm～120sccm, reaction temperature is 700～760 ℃, pressure is 150～300mtorr.
4. the method for claim 1, is characterized in that: described step 3), 5), the technological parameter in RadOx oxidation technology is H
2: 1slm～30slm, O
2: 1slm～100slm, reaction temperature is 900～1200 ℃, pressure is 0～25torr.
5. the method for claim 1, is characterized in that: in described step 3), silicon oxynitride barrier layer thickness is 30 dust～60 dusts; Wherein, the oxygen content of the ion microprobe in this silicon oxynitride barrier layer is 1%～30%.
6. the method for claim 1, is characterized in that: in described step 4), the method for preparing silicon nitride trap layer is chemical gas-phase deposition method, and the thickness of silicon nitride trap layer is 30 dust～120 dusts;
Wherein, the technological parameter of this chemical gas-phase deposition method is as follows:
Flow is NH
3: 30sccm～100sccm, SiH
2cl
2: 50sccm～120sccm, reaction temperature is 700～760 ℃, pressure is 150～300mtorr.
7. the method for claim 1, is characterized in that: in described step 5), the high thickness containing oxygen silicon oxynitride barrier layer of top layer is 40 dust～70 dusts;
Wherein, the oxygen content of the high ion microprobe containing oxygen silicon oxynitride barrier layer of this top layer is 70%～95%.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731834A (en) * | 2017-08-30 | 2018-02-23 | 长江存储科技有限责任公司 | A kind of core space layer insulation oxide layer CMP method for 3D NAND |
| CN109698117A (en) * | 2018-12-27 | 2019-04-30 | 上海华力微电子有限公司 | The process of ONO film |
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| CN107731834A (en) * | 2017-08-30 | 2018-02-23 | 长江存储科技有限责任公司 | A kind of core space layer insulation oxide layer CMP method for 3D NAND |
| CN107731834B (en) * | 2017-08-30 | 2019-01-01 | 长江存储科技有限责任公司 | A kind of core space layer insulation oxide layer CMP method for 3D NAND |
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